JP7362258B2 - 基板処理方法及び成膜システム - Google Patents
基板処理方法及び成膜システム Download PDFInfo
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- JP7362258B2 JP7362258B2 JP2019022087A JP2019022087A JP7362258B2 JP 7362258 B2 JP7362258 B2 JP 7362258B2 JP 2019022087 A JP2019022087 A JP 2019022087A JP 2019022087 A JP2019022087 A JP 2019022087A JP 7362258 B2 JP7362258 B2 JP 7362258B2
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- 239000000758 substrate Substances 0.000 title claims description 138
- 238000003672 processing method Methods 0.000 title claims description 17
- 230000015572 biosynthetic process Effects 0.000 title description 12
- 239000007789 gas Substances 0.000 claims description 234
- 238000000034 method Methods 0.000 claims description 55
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 47
- 229910052721 tungsten Inorganic materials 0.000 claims description 47
- 239000010937 tungsten Substances 0.000 claims description 47
- 230000008569 process Effects 0.000 claims description 39
- 230000008021 deposition Effects 0.000 claims description 31
- 239000001257 hydrogen Substances 0.000 claims description 27
- 229910052739 hydrogen Inorganic materials 0.000 claims description 27
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 26
- 239000006227 byproduct Substances 0.000 claims description 13
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 239000011737 fluorine Substances 0.000 claims description 11
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 10
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 41
- 239000002184 metal Substances 0.000 description 41
- 238000000151 deposition Methods 0.000 description 31
- 238000010926 purge Methods 0.000 description 28
- 230000007246 mechanism Effects 0.000 description 26
- 238000007781 pre-processing Methods 0.000 description 26
- 239000002994 raw material Substances 0.000 description 21
- 238000000231 atomic layer deposition Methods 0.000 description 19
- 230000032258 transport Effects 0.000 description 19
- 230000007723 transport mechanism Effects 0.000 description 18
- 238000005755 formation reaction Methods 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000007795 chemical reaction product Substances 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- -1 ammonium fluorosilicate Chemical compound 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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Description
本実施形態に係るクラスタシステム(成膜システム)300について、図1を用いて説明する。図1は、本実施形態に係るクラスタシステム300の構成図である。クラスタシステム300は、ウェハ等の基板Wに酸化膜除去処理を行い、その後、酸化膜除去処理が施された基板Wに金属膜成膜処理を行うための装置である。
次に、金属膜成膜装置200の構造の一例について、図2を用いて説明する。図2は、本実施形態に係るクラスタシステム300が備える金属膜成膜装置200の断面模式図の一例である。
次に、図3から図5を用いて、本実施形態に係るクラスタシステム300による成膜方法について説明する。図3は、本実施形態に係るクラスタシステム300による成膜方法の一例を示すフローチャートである。図4は、各工程における基板Wの状態を示す断面模式図である。
基板温度:480℃(300~600℃)
ラインL1 WCl6:4.5sccm(1~30sccm)
ラインL2 H2:5000sccm(1000~15000Sccm)
ラインL7 H2:100sccm(1~500Sccm)
ラインL5及びL6 N2:2000sccm(500~5000sccm)
ラインL3及びL4 N2:800sccm(100~5000sccm)
処理空間圧力:45Torr(10~100Torr)
WCl6供給時間[S501]/N2パージ時間[S502]/H2供給時間[S503]/N2パージ時間[S504]:0.3秒/0.2秒/0.3秒/0.2秒(各ステップ:0.01~1秒)
繰り返し回数:50回(膜厚により変動 例えば、70A程度では1~300回)
2 基板載置台(ステージ)
5 処理ガス供給機構
6 制御装置(制御部)
21 ヒータ
100 第1前処理装置(処理装置)
150 第2前処理装置(処理装置)
200 金属膜成膜装置(処理装置)
300 クラスタシステム(成膜システム)
310 全体制御部
401 シリコン基体
402 絶縁膜
403 トレンチ
404 自然酸化膜
405 反応生成物(副生成物)
406 タングステン膜
407 下地膜
408 タングステン膜
Claims (13)
- 表面に自然酸化膜が形成され、下地膜は形成されていない基板を準備する工程と、
前記自然酸化膜を除去する処理である前処理を前記基板に対して施す工程と、
前記基板を載置するステージの温度を所定の温度に加熱し、前記前処理を施した後の前記基板に対して塩化タングステンガスおよび還元ガスを供給して、前記基板に直接タングステン膜を成膜する工程と、を含み、
前記前処理を施す工程は、
窒素含有ガスとフッ素含有ガスの混合ガスに前記基板を晒す前処理工程と、
前記前処理工程で発生した副生成物を昇華させて前記基板から該副生成物を除去する副生成物除去工程と、を有し、
前記塩化タングステンは、WCl6、WCl5、WCl4、WCl3のいずれかである、
基板処理方法。 - 前記タングステン膜を成膜する工程は、前記ステージの温度を制御して、前記基板に選択的に前記タングステン膜を成膜する、
請求項1に記載の基板処理方法。 - 前記前処理工程は、前記自然酸化膜をエッチングにより除去するエッチング処理である、
請求項1に記載の基板処理方法。 - 前記エッチング処理は、プラズマを用いないエッチング処理である、
請求項3に記載の基板処理方法。 - 前記還元ガスは、水素を含有するガスである、
請求項1乃至請求項4のいずれか1項に記載の基板処理方法。 - 前記水素を含有するガスは、H2である、
請求項5に記載の基板処理方法。 - 前記前処理を施す工程と前記タングステン膜を成膜する工程とは、大気曝露することなく処理される、
請求項1乃至請求項6のいずれか1項に記載の基板処理方法。 - 前記タングステン膜を成膜する工程における基板の温度は、300℃~600℃である、
請求項1乃至請求項7のいずれか1項に記載の基板処理方法。 - 前記タングステン膜を成膜する工程は、前記塩化タングステンガスと前記還元ガスを交互に供給する、
請求項1乃至請求項8のいずれか1項に記載の基板処理方法。 - 1つまたは複数の処理装置と、
制御部と、を備え、
前記制御部は、
表面に自然酸化膜が形成され、下地膜は形成されていない基板を準備する工程と、
前記自然酸化膜を除去する処理である前処理を前記基板に対して施す工程と、
前記基板を載置するステージの温度を所定の温度に加熱し、前記前処理を施した後の前記基板に対して塩化タングステンガスおよび還元ガスを供給して、前記基板に直接タングステン膜を成膜する工程と、を行うように前記処理装置を制御し、
前記前処理を施す工程は、
窒素含有ガスとフッ素含有ガスの混合ガスに前記基板を晒す前処理工程と、
前記前処理工程で発生した副生成物を昇華させて前記基板から該副生成物を除去する副生成物除去工程と、を有し、
前記塩化タングステンは、WCl6、WCl5、WCl4、WCl3のいずれかである、
成膜システム。 - 前記前処理工程は、第1の処理装置で行い、前記副生成物除去工程は、第2の処理装置で行う、
請求項10に記載の成膜システム。 - 前記前処理工程と前記副生成物除去工程は、同じ処理装置で行う、
請求項10に記載の成膜システム。 - 前記前処理を施す工程と前記タングステン膜を成膜する工程は、真空を破ることなく行う、
請求項10乃至請求項12のいずれか1項に記載の成膜システム。
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JP2010245512A (ja) | 2009-03-19 | 2010-10-28 | Tokyo Electron Ltd | 基板のエッチング方法及びシステム |
JP2015190020A (ja) | 2014-03-28 | 2015-11-02 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
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US9595470B2 (en) * | 2014-05-09 | 2017-03-14 | Lam Research Corporation | Methods of preparing tungsten and tungsten nitride thin films using tungsten chloride precursor |
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