WO2009113400A1 - 原料供給装置 - Google Patents
原料供給装置 Download PDFInfo
- Publication number
- WO2009113400A1 WO2009113400A1 PCT/JP2009/053543 JP2009053543W WO2009113400A1 WO 2009113400 A1 WO2009113400 A1 WO 2009113400A1 JP 2009053543 W JP2009053543 W JP 2009053543W WO 2009113400 A1 WO2009113400 A1 WO 2009113400A1
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- WO
- WIPO (PCT)
- Prior art keywords
- raw material
- gas
- valve
- pipe
- supply
- Prior art date
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- 239000002994 raw material Substances 0.000 title claims abstract description 85
- 239000007789 gas Substances 0.000 claims abstract description 88
- 239000012159 carrier gas Substances 0.000 claims abstract description 40
- 230000005587 bubbling Effects 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 18
- 238000005259 measurement Methods 0.000 claims 1
- 239000002699 waste material Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 33
- 239000010408 film Substances 0.000 description 22
- 238000010926 purge Methods 0.000 description 22
- 230000032258 transport Effects 0.000 description 18
- 239000010409 thin film Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 12
- 238000001179 sorption measurement Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 239000002052 molecular layer Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 150000002902 organometallic compounds Chemical class 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45593—Recirculation of reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/7722—Line condition change responsive valves
- Y10T137/7758—Pilot or servo controlled
- Y10T137/7761—Electrically actuated valve
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/85978—With pump
Definitions
- the present invention relates to a raw material supply apparatus that supplies a raw material gas to a thin film forming apparatus that forms a thin film by vapor phase growth.
- the atomic layer growth method is a vapor phase growth technique in which a thin film is formed in units of atomic layers by alternately supplying a source gas of each element constituting a film to be formed to a substrate.
- a metal organic compound gas constituting a film to be formed is used as a raw material gas.
- such an organometallic compound is a liquid at room temperature (about 20 ° C.).
- a liquid of an organometallic compound is vaporized by a so-called bubbling method to form a raw material gas (see Japanese Patent Application Laid-Open Nos. 5-074758 and 5-251348).
- the method of vaporizing the liquid source by the bubbling method has a simple structure, and can be used as a carrier gas for the vaporized source gas such as the gas used for bubbling. Supply means.
- the source gas is intermittently supplied onto the substrate.
- a bubbling method for example, there is a method of performing bubbling only when supplying gas.
- the bubbling method the gas generation state is not stable immediately after the bubbling is started, and the amount (concentration) of the vaporized gas to be generated immediately after the bubbling is started and after the bubbling is continued to some extent. Change. For this reason, it is not easy to stably supply the source gas by the method of repeatedly stopping and starting bubbling.
- the present invention has been made to solve the above-described problems, and an object of the present invention is to make it possible to supply raw material gas more stably in a state where waste of raw materials is suppressed.
- a raw material supply apparatus is connected to a raw material container in which a raw material liquid is stored, an introduction pipe connected to the raw material container and introducing a carrier gas for bubbling the raw material liquid into the raw material container, A supply pipe that transports the source gas generated by bubbling and derived from the source container, a pump that is provided in the transport pipe, transports the source gas, and is branched from the transport pipe and connected to the supply target to supply the source gas
- a supply valve is provided in a supply pipe for branching from a transportation pipe to supply a source gas to a supply target, and a circulation valve is provided in a circulation pipe branched from the transportation pipe and communicated with an introduction pipe. Since at least the opening and closing of the supply valve and the circulation valve are controlled to be in different states by the unit, the effect that the raw material gas can be supplied more stably in a state where waste of the raw material is suppressed can be obtained.
- FIG. 1 is a diagram showing a configuration of a raw material supply apparatus and a thin film forming apparatus that supplies raw materials by the raw material supply apparatus in an embodiment of the present invention.
- FIG. 2 is a timing chart for explaining an operation example of the raw material supply apparatus in the embodiment of the present invention.
- FIG. 1 is a diagram showing a configuration of a raw material supply apparatus and a thin film forming apparatus that supplies raw materials by the raw material supply apparatus in an embodiment of the present invention.
- the thin film forming apparatus includes a film forming chamber 101 in which a film is grown in a gas phase, a substrate stage 102 having a heating mechanism disposed inside the film forming chamber 101, and an exhaust mechanism 104.
- the raw material can be supplied from 105.
- a substrate 103 on which a thin film is to be formed is placed on the substrate table 102.
- the thin film forming apparatus includes an oxidation gas supply unit 106 that supplies an oxidation gas to the film formation chamber 101 and a purge gas supply unit 107 that supplies a purge gas made of an inert gas such as nitrogen gas or argon (Ar).
- a purge gas made of an inert gas such as nitrogen gas or argon (Ar).
- the thin film forming apparatus is, for example, an atomic layer growth apparatus.
- the raw material supply device 105 includes a raw material container 151 that stores liquid raw materials, an introduction pipe 152 a that is connected to the raw material container 151 and introduces a carrier gas into the raw material container 151, and is connected to the raw material container 151.
- a mass flow controller (MFC) 154 to be controlled.
- a carrier gas supply unit such as a cylinder into which a carrier gas is press-fitted is connected to the introduction pipe 152a.
- the raw material supply apparatus 105 is branched from the transport pipe 152b and connected to the film forming chamber (supply target) 101, and a supply pipe 155a for supplying the raw material gas and the carrier gas to the film forming chamber 101, and a transport pipe 152b.
- a circulation pipe 155b for returning the raw material gas and the carrier gas to the introduction pipe 152a (raw material container 151), an introduction valve 156a provided in the introduction pipe 152a, and a supply pipe 155a
- a control unit 157 connected to the supply valve 156b provided, the circulation valve 156c provided in the circulation pipe 155b, the introduction valve 156a, the supply valve 156b, and the circulation valve 156c to control the opening and closing of the respective valves 156a to 156c.
- a pressure gauge 158 provided in connection with the introduction pipe 152a.
- the introduction valve 156a is provided on the carrier gas supply side from a location where the circulation pipe 155b of the transport pipe 152a is connected.
- each of these parts is accommodated in the thermostat 159, and can be heated (preserved) to a predetermined temperature.
- a predetermined temperature for example, liquefaction of the source gas in the piping such as the circulation piping 155b can be suppressed.
- an introduction pipe (bubble gas inlet) communicating with the introduction pipe 152a is set in the contained raw material liquid so that carrier gas can be introduced into the raw material liquid (bubbling).
- the carrier gas is an inert gas such as nitrogen gas or Ar.
- a lead-out port of the transport pipe 152b is arranged so that the vaporized gas of the raw material liquid obtained by bubbling can be led out.
- the source gas and the carrier gas which are led out from the source container 151 and transported by the pump 153 and the flow rate of which is controlled by the MFC 154, are supplied to the supply pipe by the supply valve 156b and the circulation valve 156c controlled by the control unit 157. 155a or the circulation pipe 155b.
- the supply valve 156b is opened and the circulation valve 156c is closed
- the source gas and the carrier gas transported through the transport pipe 152b are guided to the supply pipe 155a and supplied to the film formation chamber 101.
- the circulation valve 156c is opened and the supply valve 156b is closed
- the raw material gas and the carrier gas transported through the transport pipe 152b are guided to the circulation pipe 155b and returned to the introduction pipe 152a.
- the carrier gas is supplied to the introduction pipe 152a through the introduction valve 156a.
- the controller 157 controls the opening / closing of the introduction valve 156a according to the value of the internal pressure of the introduction pipe 152a measured by the pressure gauge 158. For example, a preset pressure value is set in the control unit 157 in advance, and when the pressure value measured by the pressure gauge 158 falls below the lower limit value of the set pressure value, the introduction valve 156a is opened by the control of the control unit 157. Then, the carrier gas is introduced into the introduction pipe 152a. When the pressure value measured by the pressure gauge 158 is higher than the upper limit value of the set pressure value, the introduction valve 156a is closed under the control of the control unit 157, and the introduction of the carrier gas to the introduction pipe 152a is stopped.
- the control unit 157 controls the supply valve 156b to be closed and the introduction valve 156a and the circulation valve 156c to be opened. Further, the gas in the transport pipe 152b is transported from the raw material container 151 side to the MFC 154 side by the pump 153.
- the carrier gas is supplied to the introduction pipe 152a, and the carrier gas is introduced into the raw material liquid stored in the raw material container 151 and bubbled to generate a vaporized gas of the raw material liquid.
- the vaporized gas generated in the raw material container 151 leads to the raw material container 151, is transported through the transport pipe 152b by the pump 153, the flow rate is controlled by the MFC 154, and returns to the introduction pipe 152a via the circulation pipe 155b.
- the control unit 157 closes the introduction valve 156a, and the supply of the carrier gas to the introduction pipe 152a is stopped. Stopped.
- the system of the introduction pipe 152a, the raw material container 151, the transport pipe 152b, and the circulation pipe 155b is in a closed circulation state.
- the gas transportation by the pump 153 is continued, and therefore, in the raw material container 151, the bubble of the carrier gas to the contained raw material liquid is bubbled from the bubble gas inlet of the introduction pipe 152a. Will continue.
- the raw material gas generated in the raw material container 151 in this manner is circulated through the system together with the carrier gas.
- the control unit 157 closes the circulation pipe 155b and opens the supply pipe 155a.
- the source gas and the carrier gas that are transported by the pump 153 and whose flow rates are controlled by the MFC 154 are transported through the supply pipe 155 a and introduced into the film formation chamber 101.
- the source gas introduced into the film formation chamber 101 in this way is supplied onto the substrate 103 heated to a predetermined temperature by the substrate table 102 and adsorbed on this surface.
- an adsorption layer for one molecular layer is formed.
- the control unit 157 controls the supply valve 156b to be closed and the circulation valve 156c to be opened.
- the above-described circulation state is established, and in the raw material container 151, bubbling of the carrier gas with respect to the stored raw material liquid is continued from the bubble gas introduction port of the introduction pipe 152a.
- the raw material gas generated in the raw material container 151 circulates in the system together with the carrier gas.
- the introduction valve 156a is opened, and the carrier gas is introduced into the introduction pipe 152a. Even in this state, in the raw material container 151, bubbling of the carrier gas with respect to the stored raw material liquid is continued. Thereafter, at time t2 ′ in the purge process, when the pressure inside the introduction pipe 152a reaches the upper limit value of the set pressure value and is detected by the pressure gauge 158, the control unit 157 controls the introduction valve 156a. close. Thereby, the supply of the carrier gas to the introduction pipe 152a is stopped, and the above-described circulation state is obtained.
- a purge gas such as nitrogen gas or Ar gas is introduced into the film forming chamber 101 from the purge gas supply unit 107, and in addition, the gas (raw material gas) inside the film forming chamber 101 is exhausted by the exhaust mechanism 104. Is done.
- the oxidation process is completed at time t4, and the subsequent purge process is completed and the next adsorption process is started.
- the above-described circulation state is continued.
- supply of purge gas by the purge gas supply unit 107 is stopped, and oxidation gas is supplied from the oxidation gas supply unit 106.
- oxidation gas is supplied from the oxidation gas supply unit 106.
- a purge gas such as nitrogen gas or Ar gas is introduced into the film forming chamber 101 from the purge gas supply unit 107, and in addition, the exhaust mechanism 104 causes the inside of the film forming chamber 101 to be inside. Gas (oxidizing gas) is exhausted.
- the controller 157 closes the circulation pipe 155b and opens the supply pipe 155a as described above.
- the source gas and the carrier gas that are transported by the pump 153 and whose flow rates are controlled by the MFC 154 are transported through the supply pipe 155 a and introduced into the film formation chamber 101.
- the source gas introduced into the film formation chamber 101 in this manner is supplied onto the substrate 103 and is adsorbed on the surface of the oxide layer formed on the substrate 103.
- an adsorption layer for one molecular layer is formed.
- the control unit 157 controls the circulation valve 156c to be opened by closing the supply valve 156b.
- a purge gas such as nitrogen gas or Ar gas is introduced into the film forming chamber 101 from the purge gas supply unit 107, and in addition, the gas (raw material gas) inside the film forming chamber 101 is exhausted by the exhaust mechanism 104. Is done.
- the supply of the raw material gas to the film forming chamber 101 causes the internal pressure of the introduction pipe 152a to fall below the lower limit value of the set pressure value, which is detected by the pressure gauge 158, and the control unit Under the control of 157, the introduction valve 156a is opened, and the carrier gas is introduced into the introduction pipe 152a. Thereafter, at time t6 ′ in the purge process, when the pressure inside the introduction pipe 152a reaches the upper limit value of the set pressure value and is detected by the pressure gauge 158, the introduction valve is controlled by the control unit 157. 156a is closed. Thereby, the supply of the carrier gas to the introduction pipe 152a is stopped, and the above-described circulation state is obtained.
- a desired thin film made of, for example, a metal oxide constituting the raw material is formed on the substrate 103.
- the obtained state is obtained.
- the introduction valve 156a is opened and the carrier gas is supplied to the introduction pipe 152a.
- the present invention is not limited to this.
- the controller 157 Under the control, the introduction valve 156a may be opened and the carrier gas may be supplied to the introduction pipe 152a.
- the opening and closing of the supply valve 156b and the circulation valve 156c are controlled to be in different states by the control of the control unit 157. Even in the state where no gas is supplied, in the raw material container 151, bubbling of the carrier gas with respect to the stored raw material liquid is continued, and the generation of the raw material gas is continued. In addition, the generated source gas is circulated from the introduction pipe 152a to the introduction pipe 152a via the circulation pipe 155b by the transport operation of the pump 153, and therefore is not discarded.
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Abstract
Description
Claims (2)
- 原料液が収容された原料容器と、
前記原料容器に接続され、前記原料液をバブリングするためのキャリアガスを前記原料容器に導入する導入配管と、
前記原料容器に接続され、バブリングにより発生して前記原料容器より導出した原料ガスが輸送される輸送配管と、
前記輸送配管に設けられ、前記原料ガスを輸送するポンプと、
前記輸送配管より分岐して供給対象に接続され、前記原料ガスを前記供給対象に供給するための供給配管と、
前記輸送配管より分岐して前記導入配管に接続される循環配管と、
前記輸送配管の前記循環配管との接続部よりも前記キャリアガスの供給側に設けられた導入弁と、
前記供給配管に設けられた供給弁と、
前記循環配管に設けられた循環弁と、
前記導入弁、前記供給弁および前記循環弁に接続され、それぞれの弁の開閉を制御する制御部とを備え、
前記制御部は、少なくとも前記供給弁と前記循環弁との開閉を異なる状態に制御するようになされていることを特徴とする原料供給装置。 - 請求項1記載の原料供給装置において、
前記導入弁と前記原料容器との間の前記導入配管の内部圧力を測定する圧力計をさらに備え、
前記制御部は、前記圧力計の測定結果により前記導入弁の開閉を制御するようになされていることを特徴とする原料供給装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020107018621A KR101246921B1 (ko) | 2008-03-12 | 2009-02-26 | 원료공급장치 |
EP09720876.3A EP2251451B1 (en) | 2008-03-12 | 2009-02-26 | Raw material supplying device |
US12/921,771 US8382071B2 (en) | 2008-03-12 | 2009-02-26 | Raw material supply device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-063076 | 2008-03-12 | ||
JP2008063076A JP4418001B2 (ja) | 2008-03-12 | 2008-03-12 | 原料供給装置 |
Publications (1)
Publication Number | Publication Date |
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WO2009113400A1 true WO2009113400A1 (ja) | 2009-09-17 |
Family
ID=41065069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2009/053543 WO2009113400A1 (ja) | 2008-03-12 | 2009-02-26 | 原料供給装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8382071B2 (ja) |
EP (1) | EP2251451B1 (ja) |
JP (1) | JP4418001B2 (ja) |
KR (1) | KR101246921B1 (ja) |
TW (1) | TW200947507A (ja) |
WO (1) | WO2009113400A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015190035A (ja) * | 2014-03-28 | 2015-11-02 | 東京エレクトロン株式会社 | ガス供給機構およびガス供給方法、ならびにそれを用いた成膜装置および成膜方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10443127B2 (en) | 2013-11-05 | 2019-10-15 | Taiwan Semiconductor Manufacturing Company Limited | System and method for supplying a precursor for an atomic layer deposition (ALD) process |
US11970772B2 (en) | 2014-08-22 | 2024-04-30 | Lam Research Corporation | Dynamic precursor dosing for atomic layer deposition |
US10094018B2 (en) | 2014-10-16 | 2018-10-09 | Lam Research Corporation | Dynamic precursor dosing for atomic layer deposition |
US11072860B2 (en) | 2014-08-22 | 2021-07-27 | Lam Research Corporation | Fill on demand ampoule refill |
JP7089902B2 (ja) * | 2018-02-28 | 2022-06-23 | 株式会社Screenホールディングス | 基板処理装置、基板処理装置における処理液排出方法、基板処理装置における処理液交換方法、基板処理装置における基板処理方法 |
Citations (5)
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- 2009-02-26 EP EP09720876.3A patent/EP2251451B1/en active Active
- 2009-02-26 KR KR1020107018621A patent/KR101246921B1/ko active IP Right Grant
- 2009-02-26 WO PCT/JP2009/053543 patent/WO2009113400A1/ja active Application Filing
- 2009-03-06 TW TW98107318A patent/TW200947507A/zh unknown
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Cited By (2)
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JP2015190035A (ja) * | 2014-03-28 | 2015-11-02 | 東京エレクトロン株式会社 | ガス供給機構およびガス供給方法、ならびにそれを用いた成膜装置および成膜方法 |
US9938620B2 (en) | 2014-03-28 | 2018-04-10 | Tokyo Electron Limited | Gas supply mechanism, gas supplying method, film forming apparatus and film forming method using the same |
Also Published As
Publication number | Publication date |
---|---|
EP2251451A4 (en) | 2014-12-24 |
US8382071B2 (en) | 2013-02-26 |
KR20100109559A (ko) | 2010-10-08 |
US20110000554A1 (en) | 2011-01-06 |
JP2009215635A (ja) | 2009-09-24 |
EP2251451B1 (en) | 2016-01-27 |
EP2251451A1 (en) | 2010-11-17 |
TW200947507A (en) | 2009-11-16 |
JP4418001B2 (ja) | 2010-02-17 |
KR101246921B1 (ko) | 2013-03-25 |
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