TWI806846B - 連續滲入合成裝置 - Google Patents

連續滲入合成裝置 Download PDF

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TWI806846B
TWI806846B TW106143568A TW106143568A TWI806846B TW I806846 B TWI806846 B TW I806846B TW 106143568 A TW106143568 A TW 106143568A TW 106143568 A TW106143568 A TW 106143568A TW I806846 B TWI806846 B TW I806846B
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reaction chamber
precursor
distribution
buffer tank
removal
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TW201911371A (zh
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伊沃 約翰內斯 拉傑美克斯
珍 威廉 馬耶斯
維爾納 科納本
克日什托夫 卡米爾 卡赫爾
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荷蘭商Ａｓｍ智慧財產控股公司
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Abstract

本發明係關於一種連續滲入合成裝置，其包含：一反應室，其經建構及配置以容納至少一個基板；一第一前驅體流徑，其用以在一第一流量控制器啟動時，向該反應室提供該第一前驅體；一第二前驅體流徑，其用以在一第二流量控制器啟動時，向該反應室提供一第二前驅體；一移除流徑，其用以自該反應室中移除氣體；一移除流量控制器，其用以在該移除流量控制器啟動時，使該反應室中的一氣體流動至該移除流徑；以及一順序控制器，其可操作地連接至第一、第二及移除流量控制器且該順序控制器經程式化以實現滲入設置於該反應室中之該基板上的一可滲入材料。該裝置可設置有一加熱系統。

Description

連續滲入合成裝置
本發明大體上係關於製造電子元件之裝置及方法。更特定言之，本發明係關於使用滲入裝置在基板上形成一種結構。
隨著趨勢推動半導體元件尺寸愈來愈小，已出現不同圖案化技術。此等技術包括隔片限定式四重圖案化、遠紫外微影術(EUV)，及EUV與隔片限定式雙重圖案化之組合。另外，定向自組裝(DSA)已被視為未來微影術應用之選項。DSA涉及使用嵌段共聚物限定自組裝之圖案。所用嵌段共聚物可以包括聚(甲基丙烯酸甲酯)(PMMA)、聚苯乙烯或聚(苯乙烯-嵌段-甲基丙烯酸甲酯)(PS-b-PMMA)。其它嵌段共聚物可以包括新出現的「高χ」聚合物，其能夠潛在地達成小尺寸。
上述圖案化技術可以使用可滲入材料，諸如EUV聚合物或DSA嵌段共聚物抗蝕劑，其安置於基板上，以實現基板的高解析度圖案化。為了滿足高解析度與線邊緣粗糙度二者之需求，聚合物抗蝕劑通常可為薄層。然而，此類聚合物抗蝕劑薄層可具有若干缺點。特定言之，高解析度聚合物抗蝕劑可能具有低抗蝕刻性且可能遭受高線邊緣粗糙度。此低抗蝕刻性與高線邊緣粗糙度可能使得適當圖案轉印至底層更困難。
因此，滲入可滲入材料(例如圖案化材料抗蝕劑)來改變可滲入材料特性可為有利的。為了執行圖案化材料之滲入，具有最佳化滲入裝置可為有利的。
根據本發明之至少一個具體例，提供一種連續滲入裝置，其包含：反應室，其設置有一基板固持器以固持至少一個基板；前驅體分佈及移除系統，其包含一或多個反應室閥門以向該反應室提供一氣態第一及/或第二前驅體以及自該反應室移除該氣態第一及/或第二前驅體；以及順序控制器，其可操作地連接至一或多個反應室閥門且經程式化以使該氣態第一及第二前驅體能連續滲入設置於反應室中之基板上的可滲入材料中。該裝置可以設置有加熱系統，該加熱系統經建構及配置以控制自反應室直至至少一個反應室閥門的溫度，從而避免冷凝。加熱系統可以包含加熱反應室的加熱元件及介於該反應室與該反應室閥門之間的至少一個管道以控制自該反應室直至該等室閥門中之至少一者的溫度。在反應室中之第一或第二前驅體之壓力下，溫度可以控制為至少第一或第二前驅體之沸點溫度。
若使用第一或第二前驅體與混合氣體(諸如惰性氣體)之混合物，則第一或第二前驅體在反應室中之壓力可為該前驅體之分壓。分壓可為在第一及/或第二前驅體滲入期間可能達成的所需最大壓力。
滲入製程之速度可隨前驅體之(部分)壓力增加。因此，較 高壓力下之處理可以有利地最大化產出量，但使得反應室之非受熱部分及反應室與反應室閥門之間之任何管道上的冷凝風險增加。藉由控制反應室中之氣態第一或第二前驅體直至反應室閥門的溫度，能最小化反應室中之冷凝風險。
加熱系統可經建構及配置以控制反應室及自反應室至至少一個反應室閥門之管道的溫度在20與450℃之間，較佳在50與150℃之間，更佳在60與110℃之間且最佳在65與95℃之間。順序控制器可經建構及配置以達成及/或維持第一或第二前驅體在反應室中之(部分)壓力在0.001與1000托之間，較佳在0.1與400托之間，更佳在1與100托之間且最佳在2與50托之間。
根據另一具體例，提供一種連續滲入裝置，該連續滲入裝置包含：反應室，其設置有一基板固持器以固持至少一個基板；前驅體分佈及移除系統，其包含一或多個反應室閥門以向反應室提供一氣態第一或第二前驅體以及自反應室移除該氣態第一或第二前驅體；以及順序控制器，其可操作地連接至一或多個反應室閥門且經程式化以使該氣態第一及第二前驅體能連續滲入設置於反應室中之基板上的可滲入材料中。該裝置可以包含設置於前驅體分佈及移除系統中的緩衝槽。
緩衝槽可以定位於反應室上游以儲存第一或第二前驅體。緩衝槽之容積可以在反應室容積之0.1與15倍之間，較佳在0.3與3倍之間且甚至更佳在0.5與2倍之間。緩衝槽可以裝填第一或第二前驅體， 以使得當反應室可以裝填該前驅體時，其更快速地裝填，藉此增加工具之產出量。
根據又另一個具體例，提供一種連續滲入合成裝置，所述合成裝置包含：反應室，其設置有一基板固持器以固持至少一個基板；前驅體分佈及移除系統，其包含一或多個反應室閥門以向反應室提供一氣態第一或第二前驅體以及自反應室移除該氣態第一或第二前驅體；以及順序控制器，其可操作地連接至一或多個閥門且經程式化以允許該氣態第一及第二前驅體能連續滲入設置於反應室中之基板上的可滲入材料中，其中該裝置包含至少兩個反應室，各室經建構及配置以容納單一基板且前驅體分佈及移除系統是一種部分共用的前驅體分佈系統以同時向至少兩個反應室提供第一或第二前驅體以及自至少兩個反應室移除第一或第二前驅體。
藉由具有至少兩個反應室可以增加裝置產出量。藉由前驅體分佈及移除系統所提供的部分共用之第一或第二前驅體流徑及部分共用之移除流徑，可以簡化且更高效地使用裝置中之硬體。
出於概述本發明及相對於先前技術所達成之優點的目的，本發明之某些目標及優點已在上文中加以描述。當然，應明瞭無須所有該等目的或優點皆可根據本發明之任何特定具體例來達成。因此，舉例而言，熟悉本技藝者將認識到，本發明可以按照如本文所教示或建議達成或最佳化一種優點或一組優點而無須達成如本文可能教示或建議之其它目 標或優點的方式實施或執行。
所有此等具體例意圖作為本文所揭示之本發明範疇內。熟悉本技藝者參照附圖、根據以下實施方式將顯而易知此等及其他具體例，本發明不限於所揭示之任何特定具體例。
2:反應室
10:基板固持器
12:基板
14:加熱元件
16:加熱控制器
17:加熱元件
18:緩衝槽
19:反應室閥門
20:前驅體閥門
22:前驅體閥門
24:沖洗閥門
26:壓力及/或溫度感測器
28:前驅體
29:前驅體
30:容器
31:容器
32:前驅體加熱器
33:前驅體加熱器
34:沖洗氣體
36:反應室閥門/閘閥
38:緩衝槽
39:泵
40:順序控制器
50:步驟
51:滲入方法
52:步驟
53:步驟
54:步驟
55:步驟
56:循環
66:進入口
67:排出孔/開口
68:邊緣
69:噴淋頭
70:反應室
71:晶舟
71A:底部部分
72:入口
73:出口
74:裝匣台
75:基板處置器
76:中間裝載台
77:基板處置器
78:可移動主體
80:門
81:密封件
82:軸
90:處理台
91:狹縫
93:前驅體分佈及移除系統
FP:沖洗期
LP:裝載期
SP:浸漬期
應瞭解，圖中之元件為了簡化及清晰而例示且未必按比例繪製。舉例而言，圖中之一些元件尺寸相對於其它元件可能放大以有助於改良對本發明之所例示具體例之瞭解。
圖1描繪根據一個具體例之連續滲入合成裝置。
圖2a及圖2b例示根據本發明之至少一個具體例的滲入方法，其用於連續滲入合成裝置。
圖3描繪根據一個具體例之連續滲入裝置之反應室。
圖4描繪根據另一個具體例之連續滲入裝置之反應室。
圖5描繪根據一個具體例之包含分批反應器之連續滲入裝置之反應室。
圖6、圖7、圖8、圖9、圖10a、圖10b及圖10c描繪連續滲入合成裝置之不同組態。
儘管特定具體例及實施例揭示如下，但熟悉本技藝者應瞭解，本發明係擴展超出本發明具體所揭示之具體例及/或用途及其明顯修改及等效物。因此，意圖在於所揭示之本發明範疇不應受特定揭示之下述具體例限制。
圖1描繪根據一個具體例之連續滲入合成裝置。該裝置包 含由適合材料(諸如鋼、鋁或石英)製成之反應室2。頂部設置有可滲入材料的基板12可藉由基板處置器、經由基板開口(圖中未示)置放於反應室2中的基板固持器10上。反應室2形成一端經凸緣封閉之室，氣體經由一或多個開口引入該反應室，該一或多個開口設置有至少一個(分佈)反應室閥門19以控制該等開口之打開及封閉。分佈反應室閥門19使得前驅體分佈及移除系統之流體分佈部分能近接反應室2中。
前驅體分佈及移除系統可將第一前驅體28或第二前驅體29經由分佈反應室閥門19提供至反應室。第一前驅體28可作為氣體引入室2中，其係藉由第一前驅體加熱器32使容器30中所含之液體或固體蒸發以提供足以輸送至室2中的蒸氣壓。第一前驅體加熱器32可向容器30中之第一前驅體提供熱量。第二前驅體29同樣可作為氣體引入室2中，其係藉由第二前驅體加熱器33使容器31中所含之液體或固體蒸發以提供足以輸送至反應室2中的蒸氣壓。
分佈緩衝槽18可設置於反應室閥門19上游之氣體分佈及移除系統中以儲存氣體。緩衝槽之容積可以在反應室2容積之0.1與15倍之間，較佳在0.3與3倍之間且甚至更佳在0.5與2倍之間。緩衝槽可以裝填第一或第二前驅體，以使得當反應室應裝填該前驅體時，其更快速地裝填，藉此增加裝置之產出量。分佈緩衝槽18可受熱。
如所描繪，第一及第二前驅體之流徑及緩衝槽可部分地共用，然而其亦可分開。分開的流徑與亦分開的緩衝槽使得兩個緩衝槽有可能獨立地裝載，從而增加裝置產出量且達成高效的前驅體利用率。在流徑分開的情況下，各流徑可設置有單獨的分佈反應室閥門19。
前驅體分佈及移除系統可以包含沖洗系統，以將沖洗氣體34經由沖洗閥門24及分佈反應室閥門19提供至反應室2。如所描繪，沖洗氣體、第一及第二前驅體的流徑可部分地共用，然而其亦可部分地或完全地分開。在流徑分開的情況下，各流徑可設置有單獨的分佈反應室閥門19。
沖洗氣體可為惰性氣體，諸如氮氣，且可用於沖洗反應室2。沖洗氣體亦可用於沖洗緩衝槽18。
可選擇地，緩衝槽18與分佈反應室閥門19之間的單獨排氣裝置(未描繪)可連接至泵39以更有效地沖洗緩衝槽18，同時關閉分佈反應室閥門19。
替代地或附加地，沖洗系統可經建構及配置以將沖洗氣體經由沖洗反應室閥門(未圖示)直接提供至反應室2中，該沖洗反應室閥門將沖洗氣體直接提供於反應室2中。藉由將沖洗氣體直接提供於反應室中，使得在沖洗反應室的同時使用前驅體分佈及移除系統裝載前驅體變成可能。以此方式有可能增加產出量。沖洗系統可設置有沖洗氣體緩衝室以更有效地推進。
反應室在另一末端藉由凸緣封閉，該末端經由一或多個開口連接至前驅體分佈及移除系統的氣體移除部件，該等開口設置有一或多個反應室閥門36，諸如閘閥。氣體移除泵39及可選擇的移除緩衝槽38可為前驅體分佈及移除系統之氣體移除部分的一部分。
移除緩衝槽38可設置於閘閥36下游的氣體移除系統中。移除緩衝槽38之容積可在反應室容積之1與30倍之間且較佳在5與15倍 之間，以便當反應室閥門36打開時抽吸移除緩衝槽中之氣體。用於具有300mm直徑之基板之反應室2的容積對於單基板反應室而言可為0.5-1公升容積，對於基板上方具有噴淋頭的單基板反應室而言可為3至5公升且對於25至250個基板之分批反應室而言可為50-200公升。
反應室2可設置有開口(未圖示)以將基板提供給基板固持器10。可設置門以關閉及打開開口，從而使基板處置器能近接基板固持器12。基板固持器亦可形成反應室壁的一部分且可移動以能近接基板固持器10。
第一前驅體28可為一種化合物，其具有欲在基板12之可滲入材料中形成之滲入材料的元素。第一前驅體28可經由第一前驅體閥門20、緩衝槽18及分佈反應室閥門19提供至反應室2中。圖1例示具有兩個容器30及31的系統，各容器分別含有第一前驅體28及第二前驅體29。然而，欲形成之滲入材料的類型將決定前驅體及容器之數目。舉例而言，若需要三元滲入材料，則裝置可包括三個容器及三個前驅體閥門。
必要時，容器30及31亦可經其他適合之前驅體儲存手段置換。舉例而言，若前驅體之一可為固體，則可設置特別適合之容器以加速固體前驅體之昇華。容器30、31之一亦可提供氣態前驅體，使得無需加熱。
順序控制器40，例如微控制器，可操作地連接至一或多個反應室閥門19、36、前驅體閥門20、22及沖洗閥門24。順序控制器40可包含存儲程式的記憶體M，該程式經程式化以使裝置能夠執行第一前驅體28及第二前驅體29滲入設置於反應室2中之基板12上之可滲入材料。壓 力及/或溫度感測器26可監控室壓力及溫度且在操作期間與順序控制器40可操作地連接，以最佳化滲入製程條件。順序控制器40之記憶體M中所存儲之程式可經程式化以對閥門19、20、22、24及36在適當時間之打開及關閉定序，從而將第一及第二前驅體提供至反應室2以及移除第一及第二前驅體。前驅體閥門20、22可受熱。
該裝置可設置有加熱系統，該加熱系統包含第一加熱元件14，例如加熱電阻絲，及可操作地連接至溫度感測器26的加熱控制器16。一或多個溫度感測器26亦可設置有壓力感測器。加熱控制器16可操作地連接至順序控制器40。溫度感測器26可用於測量反應室2中之溫度且向加熱控制器16提供關於此溫度之反饋以調節加熱元件14之溫度，從而調節反應室2之溫度。
加熱系統16可控制自反應室2直至至少一個反應室閥門19或36的溫度。第一加熱元件14因此可沿著反應室2延伸至該至少一個反應室閥門19或36以加熱反應室2。第一加熱元件14可加熱反應室2以及介於反應室2與該至少一個反應室閥門19或36之間的至少一個管道。第一加熱元件亦可加熱反應室閥門19、36之一，以避免在該閥門上冷凝。
(分佈)反應室閥門19與反應室2之間的前驅體流入管可設置有第一加熱元件14的一部分。沿著前驅體流入管道之第一加熱元件14的此部分可個別地用延伸於流入管中的溫度感測器26及加熱控制器16控制，以調節前驅體流入管之溫度。
反應室2與(移除)反應室閥門36之間的前驅體移除流管道可設置有第一加熱元件14的一部分。沿著前驅體移除流管道之第一加熱元 件14的此部分可個別地用延伸於前驅體移除流管道中的溫度感測器26及加熱控制器16控制。
以此方式可避免冷斑，其會導致反應室2、前驅體流入管及前驅體移除流管道中出現冷凝。前驅體冷凝會引起前驅體無法有效地於反應室移除，且因此冷凝物可與後續前驅體反應成顆粒，該等顆粒可污染反應室及基板12。特別言之，輸送前驅體之流入管中的顆粒會產生多種問題。
可將溫度設定成最佳化製程溫度。滲入製程速度可隨壓力而增加。因此，在較高壓力下處理有利地最大化產出量，但增加冷凝風險。在反應室2中，在第一或第二前驅體之最大壓力下，第一或第二前驅體之沸點溫度應低於所需最佳化製程溫度以避免冷凝。藉由控制自反應室2直至至少一個反應室閥門19、36的溫度，能夠最小化冷凝風險。控制自容器30及31直至反應室閥門36之整個流徑的溫度亦可為有利的。
舉例而言，若第一或第二前驅體為三甲基鋁(TMA)，則蒸氣壓為：
20℃~9托
40℃~25托
60℃~64托
80℃~149托
100℃~313托
128℃~760托
自此等值可以看出，處理壓力能夠藉由提高反應室中之溫度而實質性增加。然而，若小部分存在於與前驅體接觸且溫度稍微較低的裝置中，則立刻存在非所需之前驅體冷凝風險。
前驅體(例如TMA)與可滲入材料之相互作用主要可經由吸附及擴散發生。由於吸附及擴散速率以及吸附反應之平衡可受到溫度變化的影響，因此溫度會對滲入產生明顯的作用。
滲入製程在90℃下進行可為最佳，而在120℃及150℃下，滲入不太適合用於TMA。對於基於吸附的製程而言，此可預期。在較高溫度下，吸附反應平衡可能向單獨的TMA及聚合物種類轉移。因此製程溫度較佳為20與400℃之間、較佳在50與150℃之間、更佳在60與110℃之間且最佳在65與95℃之間。
因此，加熱系統可經建構及配置以控制反應室及自反應室直至至少其各別反應室閥門之管道的溫度在20與450℃之間，較佳在50與150℃之間，更佳在60與110℃之間且最佳在65與95℃之間。順序控制器中之記憶體M可用程式加以程式化以便在滲入期間供裝置達成及/或維持反應室中之第一或第二前驅體壓力在0.001與1000托之間，較佳在0.1與400托之間，更佳在1與100托之間且最佳在2與50托之間，以避免冷凝。以此方式，吾等產生避免裝置中出現冷凝的足夠安全容許量，同時就使用前驅體TMA而言具有最佳製程溫度及壓力。
該裝置可包含含有液體流量控制器的直接液體噴射器(DLI)及氣化器。液體流量控制器可控制液體流動至使第一或第二前驅體蒸發的氣化器。流量控制器與氣化器之間的液流可以無需加熱。可以加熱氣 化器以蒸發第一或第二前驅體。加熱系統可以經建構及配置以控制自反應室2直至氣化器的溫度為第一或第二前驅體在反應室2中之第一或第二前驅體壓力下的至少沸點溫度，以避免冷凝。氣化器可建構及配置於反應室中以向反應室中直接提供蒸發前驅體。氣化器亦可建構及配置於裝置之前驅體分佈及移除系統中。
裝置之前驅體分佈及移除系統可包含設置於前驅體分佈及移除系統中的至少一個緩衝槽18、38。緩衝槽可為定位於反應室2上游之儲存氣態第一前驅體28或氣態第二前驅體29的分佈緩衝槽18且容積在反應室2之容積的0.1與10倍之間，較佳在0.3與3倍之間，且甚至更佳在0.5與2倍之間。用於具有300mm直徑之基板之反應室2的容積對於單基板反應室而言可為0.5-1公升容積，對於基板上方具有噴淋頭的單基板反應室而言可為3至5公升且對於25至250個基板之分批反應室而言可為50-200公升。
分佈緩衝槽18可設置有直接液體噴射器(DLI)氣化器以將氣態前驅體直接注入緩衝槽中。分佈緩衝槽18可包含撓性波紋管以適應緩衝槽的不同容積。分佈緩衝槽18可設置於反應室2中或靠近其頂部以縮短至反應室2的輸送管線且其同時可藉由反應室加熱。
該裝置可包含第二加熱元件17以控制前驅體分佈及移除系統中之前驅體緩衝槽18及/或流體分佈部分中之管道的溫度。此等部分之溫度經控制可比反應室2之溫度高0至50℃，更佳0.1至20℃，甚至最佳0.2至10℃。第二加熱元件17可藉由加熱控制器16控制。第二溫度/壓力感測器(未描繪)可設置於前驅體緩衝槽18及/或流體分佈部分中之管道且可 操作地連接至加熱控制器16以增強控制。藉由使緩衝槽18的溫度高於反應室2，有可能在緩衝槽18中維持前驅體的較高蒸氣壓，使得在打開分佈反應室閥門19之後，在短時間間隔內裝填反應室2所需的緩衝槽尺寸更小。
第一加熱元件14及第二加熱元件17可為捲繞該裝置之相關部分的電阻絲。在良好的溫度絕緣及約90℃的相對較低操作溫度下，可操作此類具體例。第一加熱元件14及第二加熱元件17可為多區段加熱元件，其具有多個溫度感測器以更精確地控制工具之每個部分中的溫度。
前驅體分佈及移除系統可包含用於提供前驅體的鼓泡器。鼓泡器可提供不連續的前驅體流動，其具有0.1至200秒、較佳1至3秒之第一前驅體的脈衝，第一前驅體的脈衝與0.01至2秒、較佳0.3至1秒之混合氣體脈衝交替。
前驅體分佈及移除系統可設置有直接液體噴射器(DLI)氣化器，以將氣態前驅體直接注入反應室2中、分佈緩衝槽18中或位於分佈反應室閥門19上游之前驅體分佈及移除系統之其它管道中。
前驅體分佈及移除系統可以具有移除緩衝槽38，所述移除緩衝槽設置於反應室下游之前驅體分佈及移除系統中，位於移除反應室閥門36之後，但位於移除泵39之前。移除緩衝槽之容積可在反應室容積之1與20倍之間且較佳在5與15倍之間，以便當移除反應室閥門36打開時抽吸移除緩衝槽中之氣體。
參見圖1，在典型的操作期間，第一前驅體28滲入基板上之可滲入材料中，其藉由暴露於來自容器30之呈氣相的第一前驅體28來達成。第一前驅體28可與基板上之可滲入材料反應且變成滲入基板上之可 滲入材料中的化學吸收或物理吸收衍生物。隨後，第二前驅體29滲入基板上之可滲入材料中，其藉由暴露於來自容器31之呈氣相的第二前驅體29來達成。第二前驅體29可與滲入基板上之可滲入材料中之第一前驅體28的化學吸收或物理吸收衍生物反應而變成最終滲入材料。
用於儲存第一或第二前驅體的容器30、31經建構及配置以儲存選自由以下組成之群的烷基鋁化合物：三甲基鋁(TMA)、三乙基鋁(TEA)及氫化二甲基鋁(DMAH)。
容器30、31可經建構及配置以儲存第一或第二前驅體，諸如氯化鈦(IV)(TiCl)、氯化鉭(V)(TaCl5)及/或氯化鈮(NbCl5)。
對於滲入鋯或鉿而言，容器30、31可經建構及配置以儲存Zr或Hf前驅體。Zr或Hf前驅體可包含金屬有機、有機金屬或鹵化物前驅體。在一些具體例中，前驅體為鹵化物。在一些其他具體例中，前驅體為Hf或Zr烷基胺化合物，諸如TEMAZ或TEMAH。
容器30、31可經建構及配置以儲存第一或第二前驅體，諸如選自包含以下之群的氧化劑：水、臭氧、過氧化氫、氨及肼。
該裝置可包含第一容器31用於容納第一或第二前驅體，諸如鋁或硼烴化合物，較佳選自由以下組成之群：三甲基鋁(TMA)、三乙基鋁(TEA)、氫化二甲基鋁(DMAH)、二甲基乙基胺基鋁烷(DMEAA)、三甲基胺基鋁烷(TEAA)、N-甲基吡咯啶鋁烷(MPA)、三異丁基鋁(TIBA)、三第三丁基鋁(TTBA)、三甲基硼及三乙基硼；及第二容器31用於容納第一及第二前驅體中之另一者，諸如金屬鹵化物，較佳選自由氯化鈦(IV)(TiCl)、氯化鉭(V)(TaCl5)及氯化鈮(NbCl5)組成之群。後者較佳可用於滲入金屬碳化物材 料。
圖2a及b例示根據本發明之至少一個具體例之用於圖1裝置的滲入方法。該方法包括利用基板處置器將基板提供至反應室中的第一步驟50，該基板具有位於該基板上之至少一種可滲入材料。
可滲入材料可為多孔材料。孔隙度可藉由以可滲入材料總體積之分率形式量測可滲入材料中之空隙空間來量測且可具有0與1之間的值。若空隙空間相對於總體積之分率大於0.1、大於0.2或甚至大於0.3，則可滲入材料可限定為多孔材料。
該可滲入材料可為硬遮罩材料，例如包含旋塗玻璃層或旋塗碳層、氮化矽層、抗反射塗層或非晶形碳膜。旋塗玻璃層或旋塗碳層可藉由在基板上旋塗玻璃或碳層以提供硬遮罩材料來提供。另外，硬遮罩材料可包含SiCOH或SiOC。
在一個具體例中，可滲入材料可為圖案化層，例如圖案化(光)抗蝕劑層。抗蝕劑層可退火。退火步驟之目的可以是脫除抗蝕劑中之水分或其它污染物氣體、使抗蝕劑硬化、選擇性地灼燒掉基板表面之一部分抗蝕劑或產生所需的孔隙度。
在一個具體例中，圖案化層可如下設置：提供嵌段共聚物膜且促進嵌段共聚物膜進行定向自組裝以圖案化層。滲入這類圖案化層可改良這類圖案化層之品質。嵌段共聚物膜可具有例如較低抗蝕刻性且可藉由滲入共聚物圖案中來改良圖案之抗蝕刻性。
在一個具體例中，圖案化層可設置成具有用微影裝置曝光的光阻。滲入這類圖案化層可改良這類圖案化層之品質。圖案化光阻層可 具有例如較低抗蝕刻性且可藉由滲入圖案化光阻來改良圖案抗蝕刻性。
在圖1中，在圖2中的步驟50期間，將基板定位於反應室2中之後，反應室及基板可藉由對反應室2抽真空的移除泵39來清潔。可選擇地，沖洗氣體34可用沖洗系統提供以經由沖洗閥門24及分佈反應室閥門19沖洗反應室2。反應室2可受熱以增強排氣。
記憶體M中之程式可經程式化以啟動前驅體分佈及移除系統移除反應室2中之氣體且在滲入開始之前，讓沖洗系統提供沖洗氣體沖洗反應室1至4000秒，較佳100至2000秒。記憶體M中之程式可經程式化以啟動加熱系統16加熱反應室2至20與450℃之間、較佳50與150℃之間且最佳70與100℃之間的溫度以增強污染物排氣。
隨後，該方法包含滲入方法51，其中在一或多個滲入循環期間，可滲入材料可經滲入材料滲入。各滲入循環可包含以下步驟：步驟52包含向反應室中之基板上的滲入材料提供第一前驅體歷時第一時間段T1。順序控制器40中之記憶體M可設置有程式，該程式當在順序控制器40之處理器上執行時讓滲入裝置關閉沖洗閥門24及分佈反應室閥門19且藉由打開第一前驅體閥門20且藉由啟動第一前驅體溫度控制器32加熱容器32使第一前驅體28自第一容器30蒸發而使第一前驅體在分佈反應室閥門19上游之前驅體分佈及移除系統之管道中積累。第一前驅體可儲存於緩衝槽18中。加熱元件17可藉由加熱控制器16控制，以充分地加熱管道，從而保持第一前驅體在管道及緩衝槽18中的高氣相濃度。
順序控制器40之記憶體M中的程式可經程式化以接著執 行閥門20在短時間內之開啟，以將第一前驅體28輸送至反應室2。此可如下進行：打開移除反應室閥門36且啟動移除泵歷時沖洗期FP以沖洗具有第一前驅體的反應室2。沖洗期FP亦可省略。當反應室2經建構及配置以容納單一基板時，記憶體中之程式可經程式化以將第一前驅體流量控制器啟動1至60秒之間、較佳2與30秒之間的沖洗期FP。當反應室經建構及配置以容納2至25個基板時，記憶體可經程式化以使沖洗期在1至100秒之間，較佳在2與50秒之間。當反應室經建構及配置以容納26至200個基板時，記憶體中之程式經程式化以使沖洗期FP在1至100秒之間，較佳在5與50秒之間。
第一前驅體亦可利用前驅體分佈及移除系統提供至反應室2，同時移除泵39在裝載期LP不移除任何前驅體，此係藉由安裝於順序控制器40之記憶體M中的程式關閉移除反應室閥門36來達成。由此引起第一前驅體在反應室2中的壓力積累。當第一或第二前驅體在反應室2中的壓力達到所需最大滲入壓力時，此積累可藉由順序控制器40終止。或者，當反應室中之壓力增加而高於預定最大值時，壓力釋放閥門可能會打開，此亦可終止壓力裝載期LP。
隨後，可維持第一前驅體穩定滯留於反應室2中，同時使前驅體分佈及移除系統在浸漬期SP內不提供或移除任何前驅體。此可藉由順序控制器40根據記憶體M中所儲存之程式關閉反應室閥門19及36來進行。當反應室12經建構及配置以容納單一基板時，記憶體M中之程式可經程式化以啟動第一前驅體流量控制器歷時1至3000秒之間、較佳3與1000秒之間、更佳5至500秒之間的裝載期LP；以及10至9000秒、較佳50 與5000秒之間且更佳100與1000秒之間的浸漬期SP。當反應室12經建構及配置以容納2至25個基板時，順序控制器記憶體中之程式可經程式化，其中裝載期LP在1至3000秒之間，較佳在3與1000秒之間，更佳在5至500秒之間；且浸漬期SP在10至12000秒之間，較佳在15與6000秒之間且更佳在20與1000秒之間。當反應室12經建構及配置以容納26至200個基板時，記憶體M中之程式可經程式化，以具有1至3000秒之間、較佳在3與1000秒之間、更佳5至500秒的裝載期LP；以及10至14000秒之間、較佳50與9000秒之間、更佳100與5000秒之間且最佳100與800秒之間的浸漬期SP。
第一時間段T1因此可包含沖洗期FP、裝載期LP及/或浸漬期SP。在整個時間段T1期間，第一前驅體可滲入且吸收於可滲入材料中。
順序控制器40中之記憶體M可經程式化，其中程式在順序控制器之處理器上執行時，讓滲入裝置在步驟52提供第一前驅體歷時1至20000秒之間、較佳20至6000秒之間、更佳50與4000秒之間且最佳100與2000秒之間的第一時間段T1。以此方式可保證第一前驅體在可滲入材料中之深度滲入。
在步驟53中，移除第一前驅體的一部分歷時第二時段T2。順序控制器40可打開移除反應室閥門36，以經由真空泵38自反應室2中移除第一前驅體。另外，沖洗氣體34可經由沖洗系統提供以藉由順序控制器40打開沖洗閥門24及分佈反應室閥門19來沖洗反應室2。緩衝槽18可藉由將沖洗氣體儲存於緩衝槽中而用於向反應室2中更快速地提供沖洗氣 體。
順序流量控制器40之記憶體M中的程式可經程式化，其中程式當在順序控制器40之處理器上執行時將使滲入裝置控制移除第一前驅體之一部分的第二持續時間T2。記憶體M中之程式可經程式化，其中第二時間段T2在1至20000秒之間，較佳在20至6000秒之間，更佳在50與4000秒之間，且最佳在100與2000秒之間。
在步驟54中，第二前驅體藉由順序控制器40提供於反應室2中，該順序控制器啟動前驅體分佈及移除系統以將第二前驅體提供於反應室中且維持第三持續時間T3。順序控制器40之記憶體M可經程式化以關閉沖洗閥門24及分佈反應室閥門19且藉由打開第二前驅體閥門22及使第二前驅體29自第二容器31蒸發而使第二前驅體在分佈反應室閥門19上游之前驅體分佈及移除系統之管道中積累，蒸發第二前驅體29係藉由啟動第二前驅體溫度控制器33加熱第二容器31來達成。第二前驅體可儲存於緩衝槽28中。加熱元件17可藉由加熱控制器16控制以充分地加熱管道，從而保持管道及緩衝槽18中的高氣相濃度。順序控制器40之記憶體M可經程式化以接著在短時間段內打開閥門20，以將第二前驅體28輸送至反應室2。
沖洗期FP、裝載期LP及浸漬期SP已結合第一前驅體描述。順序控制器之記憶體M可設置有程式，該程式當在順序控制器40之處理器上執行時將使滲入裝置運作第三時間段54，該第三時間段具有第二前驅體之沖洗期FP、裝載期LP及/或浸漬期SP，如圖2b中所解釋。在整個第三時間段T3期間，第二前驅體可滲入可滲入材料中且與可滲入材料中所 吸收之第一前驅體衍生物反應。與所吸收之第一前驅體衍生物的反應引起滲入材料加強滲入可滲入材料中。
可選擇地，滲入循環可具有步驟55，其中可移除第二前驅體之一部分歷時第四時間段T4。順序控制器40可打開移除反應室閥門36，以經由真空泵38自反應室2中移除第一前驅體。另外，沖洗氣體34可經由沖洗系統提供以藉由順序控制器40打開沖洗閥門24及分佈反應室閥門19來沖洗反應室2。
順序控制器之記憶體M可經程式化，以使得當程式在滲入裝置之順序控制器40之處理器上執行時，滲入順序可重複N次(循環56)，其中N在1至20次之間，較佳在3至15次之間且最佳在6至12次之間。可選擇前驅體28及29，以使得前驅體在可滲入材料中形成金屬或電介質滲入材料。
第一前驅體與第二前驅體可一起用於圖1之裝置中以根據圖2a及2b之程式滲入可滲入材料中，該可滲入材料具有氧化鋁(Al2O3)、氧化矽(SiO2)、氮化矽(SiN)、氮氧化矽(SiON)、碳氮化矽(SiCN)、碳化矽(SiC)、碳化鈦(TiC)、氮化鋁(AlN)、氮化鈦(TiN)、氮化鉭(TaN)、鎢(W)、鈷(Co)、氧化鈦(TiO2)、氧化鉭(Ta2O5)、氧化鋯(ZrO2)或氧化鉿(HfO2)。
可選擇地，諸如金屬或電介質之滲入材料亦可利用滲入裝置沈積於整個體積之可滲入材料上。舉例而言，若可滲入材料經圖案化，則可如此進行以使得圖案更寬且更抗蝕刻。
圖3描繪根據另一個具體例的連續滲入裝置。反應室2設置有位於基板固持器10上的基板12。前驅體分佈及移除系統自反應室2之 一側、經由進入孔66提供第一或第二前驅體至基板12。進入孔66可設置於緩衝槽18中且可用閥門19封閉。排出孔67設置於分佈及移除系統中以自反應室2之另一側移除前驅體。在此組態中，反應室2將為交叉流反應室，其中前驅體相對於基板發生側向流動。
用於固持基板12之基板固持器10可向上及向下移動。基板固持器10可在反應室2頂部之邊緣68下方移動，以允許基板處置器(未描繪)提供基板或自基板固持器10移除基板。藉由將其向上移動，反應室可以再次封閉。基板固持器10可包含第三加熱元件用於加熱基板12。
根據圖3之具體例的一個優點為，對於單基板反應室2而言，反應室2可以具有0.5-1公升之小容積。小容積有可能降低前驅體利用率。反應室之基板與頂部之間的空間因此可小於1厘米，較佳小於5mm且最佳小於3mm。
圖4描繪根據另一個具體例的連續滲入裝置。反應室2包含噴淋頭69。噴淋頭69可設置於反應室2之頂部。噴淋頭61可與前驅體分佈及移除系統連接以將第一前驅體28或第二前驅體29直接提供至基板12之表面。前驅體分佈及移除系統可藉由開口67移除第一前驅體28或第二前驅體29。沖洗系統亦可連接至噴淋頭69以沖洗反應室2。
噴淋頭69亦可與前驅體分佈及移除系統連接以自反應室2移除第一或第二前驅體。在此情況下，開口67可連接至沖洗系統以沖洗反應室2。
用於固持基板12之基板固持器10可向上及向下移動。基板固持器10可包含第三加熱元件用於加熱基板12。此具體例之一個優點 為，噴淋頭快速地向基板表面提供前驅體以及自基板表面移除前驅體，同時容積仍可接受地在2至5公升之間，較佳為3至4公升。
圖5、6、7、8及10a-10c描繪連續滲入合成裝置之不同組態。根據圖5、6、7、8及10的連續滲入合成裝置可使用與結合圖1及2所解釋相同的前驅體分佈及移除系統。
圖5描繪根據另一個具體例的連續滲入裝置。該裝置包含用於25至250個基板、具有50-200公升容積的分批反應室70。該基板可裝載於晶舟71中，該晶舟設置有基板固持器以經由基板處置器容納25至250個基板。具有基板的晶舟71可在反應室70中、自下方移動一次。晶舟70之底部部分71A可密封反應室70。加熱元件40可經設置以控制反應室70之溫度。第一及第二前驅體可經由入口72提供且可經由前驅體分佈及移除系統之出口73移除。閥門可用於控制氣體流動且應注意以確保所蒸發的前驅體保持高於其在反應室70中之沸點溫度的溫度。此可藉由加熱元件控制入口72及出口73以及直至閥門(例如反應室閥門36)之溫度來進行。
在裝置設置有包含液體流量控制器之直接液體噴射器(DLI)及氣化器的情況下，液體流量控制器可控制流向氣化器之液體流量，該氣化器使第一或第二前驅體蒸發。流量控制器與氣化器之間的液流可以無需加熱。可以加熱氣化器以直接蒸發第一或第二前驅體。
氣化器可設置於分批反應器室中以將第一或第二前驅體直接提供於該室中。分批反應器使得同時滲入多個基板、改良裝置產出量成為可能。
圖6、7、8及10a-10c描繪連續滲入合成裝置之不同組態。 根據圖6、7及8之連續滲入合成裝置可使用如結合圖3或4所述之反應室2。
圖示為用於將裝載具有多個基板之晶匣(例如前開式通用晶匣之FOUP)的裝匣台74。第一基板處置器75用於將基板自晶匣移至中間裝載台76。第二基板處置器77隨後用於將基板自中間裝載台76移至設置有基板固持器10的處理台。在圖6中，單一基板固持器12可由第二基板固持器77近接以得到能在反應室2中處理的單一基板。在圖6之具體例中，同時能處理四個基板。
部分共用的前驅體分佈及移除系統經設置以向至少兩個反應室提供第一或第二前驅體以及自至少兩個反應室移除第一或第二前驅體。部分共用的前驅體分佈及移除系統可共用反應室閥門。各反應室的反應室閥門亦可為單獨的。前驅體分佈及移除系統之共用部分可設置於(分佈)反應室閥門19下游及(移除)反應室閥門36下游，如結合圖1所解釋。以此方式能使前驅體分佈及移除系統得到經濟性使用。
加熱元件可經設置以加熱反應室2、基板固持器10，及/或前驅體分佈及移除系統直至任何反應室閥門的管道。至少一個緩衝槽可設置於前驅體分佈及移除系統中。
在圖7及8之具體例中，處理台設置有多個基板固持器10且設置有可移動(例如可旋轉)主體78(或者，可使用旋轉基板支撐框架)且藉由旋轉此主體78(或支撐框架)，所有基板固持器10皆能由第二基板處置器77提供基板。基板固持器10能向上移動以關閉及形成反應室2。替代地或附加地，門80可經設置以封閉反應室之空間。
在圖7之具體例中，其可為形成八個處理單一基板之反應室的八個基板固持器，或其可為形成兩個共用反應室的八個基板固持器，各共用反應室處理四個基板。
在圖7之具體例中，可以使裝匣台74之特定FOUP中的基板(通常為25)專屬於特定主體78，以使得FOUP中之所有基板皆在同一主體78及反應室(與其相關)上處理。優點為，若處理一個FOUP時發現誤差，則已知發生該誤差的滲入裝置之部分。在圖7之具體例中，能兩次同時處理四個基板。
在圖8之具體例中，第一基板處置器75及第二基板處置器77可設置有同時處置兩個基板的雙基板支撐件，以增加產出量。可移動主體78可以圍繞軸82旋轉，以便第二基板處置器78近接不同基板固持器10。在圖8之具體例中，其可為形成十六個處理單一基板之反應室的十六個基板固持器10，或其可為形成四個共用反應室的十六個基板固持器10，各共用反應室處理四個基板。在圖8之具體例中，能四次同時處理四個基板，從而賦予該裝置高生產率。
圖9揭示圖7及8之具體例之處理台的橫截面。可移動主體78經設置以固持兩個或超過兩個(例如3、4、5或6個)基板12。可移動主體78能抵著密封件81向上移動，以封閉及產生兩個或超過兩個反應室2。可移動主體78能繞軸82旋轉，以便第二基板處置器78近接基板固持器10上之不同基板12。
部分共用的前驅體分佈及移除系統經設置以向至少兩個反應室2提供第一或第二前驅體以及自至少兩個反應室移除第一或第二前 驅體。部分共用的前驅體分佈及移除系統共用反應室閥門19及36。前驅體分佈及移除系統之共用部分進一步設置於(分佈)反應室閥門19上游及(移除)反應室閥門36下游，如結合圖1所解釋。以此方式能使前驅體分佈及移除系統得到經濟性使用。
加熱元件可經設置以加熱反應室2、基板固持器10，及/或前驅體分佈及移除系統直至任一個反應室閥門19、36的管道。至少一個緩衝槽可設置於前驅體分佈及移除系統中。
在未圖示的一個具體例中，各具有五個基板固持器的五個處理台可經設置以同時處理具有25個基板的完整FOUP，從而保證完整FOUP之處理時間縮短。
圖10a、10b及10c描繪根據本發明之另一個具體例。在此具體例中，處理台90設置有能充當基板固持器10的狹縫91(參見圖10c，其描繪穿過狹縫91之橫截面)。裝匣台74經設置以裝載具有多個基板之晶匣(例如前開式通用晶匣之FOUP)。第一基板處置器(未圖示，但類似於圖6及7中之第一基板處置器75)可用於將基板自晶匣移至中間裝載台(未圖示，但類似於圖6及7中之中間裝載台76)。第二基板處置器(未圖示，但類似於圖6及7中之第二基板處置器77)可將基板自中間裝載台提供至狹縫91。門可封閉狹縫91以產生反應室且基板可在處理台90加以處理。
部分共用的前驅體分佈及移除系統93可經設置以同時將第一或第二前驅體提供給狹縫91中之所有基板以及自該等基板移除第一或第二前驅體。五個基板可在處理台90同時處理，其優點為晶匣台74之具有25基板之完整FOUP能在五個處理台90加以處理。由於該裝置具有八 個處理台90，因此可以同時處理四十個基板，從而保證完整FOUP之處理時間縮短。
第一加熱元件可經設置以加熱處理台90之狹縫91中的反應室及/或前驅體分佈及移除系統93中的管道。有利地，此可進行至前驅體分佈及移除系統93中之任一個反應室閥門。至少一個緩衝槽可設置於前驅體分佈及移除系統93中。
所示及所述之特定實施方案例示本發明及其最佳方式且非意圖用於以任何方式限制其他態樣及實施方案之範圍。的確，為了簡潔起見，系統之習知製造、連接、製備及其他功能態樣可不加以詳細描述。此外，各圖中所示之連線意圖用於表示各元件之間的例示性功能關係及/或物理耦接。許多替代或附加功能關係或物理連接可存在於實際系統中，及/或在一些具體例中可不存在。
應瞭解，本文所述之組態及/或方法本質上具示例性，且此等特定具體例或實施例不視為具有限制意義，原因在於可能存在諸多變化。本文所述之特定程序或方法可代表任何數目種處理策略中之一或多者。因此，所例示之各種動作可以所例示之順序、以其他順序執行，或在一些情況下省略。
本發明之標的包括本文中所揭示之各種製程、裝置、系統及組態以及其他特徵、功能、動作及/或特性之所有新穎且非顯而易見的組合及子組合，以及其任何及所有等效物。
2‧‧‧反應室
10‧‧‧基板固持器
12‧‧‧基板
14‧‧‧加熱元件
16‧‧‧加熱控制器
17‧‧‧加熱元件
18‧‧‧緩衝槽
19‧‧‧反應室閥門
20‧‧‧前驅體閥門
22‧‧‧前驅體閥門
24‧‧‧沖洗閥門
26‧‧‧壓力及/或溫度感測器
28‧‧‧前驅體
29‧‧‧前驅體
30‧‧‧容器
31‧‧‧容器
32‧‧‧前驅體加熱器
33‧‧‧前驅體加熱器
34‧‧‧沖洗氣體
36‧‧‧反應室閥門/閘閥
38‧‧‧緩衝槽
39‧‧‧泵
40‧‧‧順序控制器

Claims (24)

  1. 一種連續滲入合成裝置，其包含：一反應室，其設置有一基板固持器以固持至少一個基板；一前驅體分佈及移除系統，其包含：一或多個上游及下游反應室閥門以向該反應室提供一氣態第一及/或第二前驅體以及自該反應室移除該氣態第一及/或第二前驅體；至少一個分佈緩衝槽，其設置於上游反應室閥門與前驅體源閥門之間，其中該分佈緩衝槽經建構及配置以儲存一容積之該氣態第一及/或第二前驅體；以及一移除緩衝槽，其設置於下游反應室閥門與氣體移除泵之間，其中該移除緩衝槽之容積大於該反應室之容積，其中該移除緩衝槽及該氣體移除泵經建構及配置，使得在打開該下游反應室閥門時，該移除緩衝槽從該反應室內抽吸一或多種氣體；以及一順序控制器，其可操作地連接至該一或多個上游及下游反應室閥門且經程式化以使該氣態第一及第二前驅體能夠連續滲入設置於該反應室中之該基板上的一可滲入材料中，其中該裝置設置有一第一加熱系統，該第一加熱系統經建構及配置以控制該反應室直至該等上游及下游反應室閥門中之至少一者的溫度，其中在不移除任何前驅體的同時，該順序控制器利用該前驅體分佈及移除系統將該第一前驅體提供至該反應室歷時一裝載期LP，致使壓力在該反應室中積累，且當該氣態第一或第二前驅體在該反應室中之該壓力達到一所需滲入壓力時，終止該裝載期LP；其中該前驅體分佈及移除系統包含一第二加熱系統，該第二加熱系統 經建構及配置以在將該第一或第二前驅體提供於該反應室中之前，控制在該分佈緩衝槽中之該等前驅體之溫度為高於該反應室之溫度0℃至50℃之一預定溫度。
  2. 如請求項1之裝置，其中，該裝置經建構及配置以使該第一或第二前驅體在該反應室中之一壓力維持在0.001與1000托之間，且該第一加熱系統經建構及配置以在滲入期間控制該反應室直至該一或多個上游及下游反應室閥門中之至少一者的該溫度在20℃與450℃之間，至少為該第一或第二前驅體在該反應室中之該第一或第二前驅體之該壓力下的一沸點溫度。
  3. 如請求項1之裝置，其中，該一或多個上游及下游反應室閥門中之至少一者包含一閘閥、一減壓閥，或控制一氣體之流量的一泵，且該第一加熱系統經建構及配置以控制該反應室直至該一或多個上游及下游反應室閥門之該溫度。
  4. 如請求項1之裝置，其中，該一或多個上游及下游反應室閥門中之至少一者包含位於一液體噴射系統中之一液體流量控制器以控制流向使該第一或第二前驅體蒸發之一氣化器的一液體流量，且該第一加熱系統及該第二加熱系統經建構及配置以控制自該氣化器至該反應室的溫度至少為該第一或第二前驅體在該反應室中之該第一或第二前驅體之該壓力下的一沸點溫度。
  5. 如請求項1之裝置，其中，該前驅體分佈及移除系統包含介於該反應室與該一或多個上游及下游反應室閥門中之至少一者之間的一管道以提供或移除一氣態前驅體，且該第一加熱系統圍繞該管道設置以控制該管道 之該溫度。
  6. 如請求項1之裝置，其進一步包含一容器，該容器經建構及配置以儲存該第一或第二前驅體，該第一或第二前驅體包含氯化鈦(IV)(TiCl4)、氯化鉭(V)(TaCl5)及/或氯化鈮(NbCl5)。
  7. 如請求項1之裝置，其中，該順序控制器包含一記憶體，該記憶體經程式化以使該裝置能夠在N個滲入循環期間執行滲入，其包含：藉由該前驅體分佈及移除系統將該第一前驅體提供於該反應室中，以向該反應室中提供及維持該第一前驅體歷時一第一持續時間T1；藉由啟動該前驅體分佈及移除系統而自該基板移除該第一前驅體之一部分歷時至少一第二持續時間T2；藉由啟動該前驅體分佈及移除系統而將該第二前驅體提供於該反應室中，以向該反應室中提供及維持該第二前驅體歷時一第三持續時間T3。
  8. 如請求項7之裝置，其中，該順序控制器經程式化以：在不移除任何前驅體的同時，利用該前驅體分佈及移除系統將該第一前驅體提供至該反應室歷時一裝載期LP，致使壓力在該反應室中積累；以及在撤銷啟動該前驅體分佈及移除系統的同時，使該第一前驅體留在該反應室中歷時一浸漬期SP。
  9. 如請求項8之裝置，其中，該順序控制器經程式化以：在該裝載期LP之前及/或之後，在移除任何前驅體的同時，利用該前驅體分佈及移除系統將該第一前驅體提供至該反應室歷時一沖洗期FP。
  10. 如請求項8之裝置，其中，該順序控制器經程式化以： 當該第一或第二前驅體在該反應室中之該壓力達到一所需滲入壓力時，終止該裝載期LP。
  11. 如請求項7之裝置，其中，該順序控制器經程式化以控制該前驅體分佈及移除系統，從而使提供該第一前驅體之該持續時間T1長於自該基板移除該第一前驅體之該部分的該第二持續時間T2。
  12. 一種連續滲入合成裝置，其包含：一反應室，其設置有一基板固持器以固持至少一個基板，以及一第一加熱系統，該第一加熱系統經建構及配置以控制該反應室之溫度為一製程溫度；一前驅體分佈及移除系統，其包含一或多個上游及下游反應室閥門以向該反應室提供一氣態第一或第二前驅體以及自該反應室移除該氣態第一或第二前驅體；以及一順序控制器，其可操作地連接至該一或多個反應室閥門中之一或多者且經程式化以使該氣態第一及第二前驅體能夠連續滲入設置於該反應室中之該基板上的一可滲入材料，其中在不移除任何前驅體的同時，該順序控制器利用該前驅體分佈及移除系統將該第一前驅體提供至該反應室歷時一裝載期LP，致使壓力在該反應室中積累，且當該氣態第一或第二前驅體在該反應室中之該壓力達到一所需滲入壓力時，終止該裝載期LP，其中該可滲入材料為多孔的，其中該連續滲入合成裝置包含：設置於該前驅體分佈及移除系統中的至少一個分佈緩衝槽，其中該分佈緩衝槽設置有一第二加熱系統，該第二加熱系統經建構及配置以控制該分佈緩衝槽之溫度為一比該製程溫度高之緩衝槽溫度，且其中該分 佈緩衝槽經建構及配置以儲存一容積之該氣態第一及第二前驅體；及一移除緩衝槽，其設置於該下游反應室閥門與氣體移除泵之間，其中該移除緩衝槽之容積大於該反應室之容積，其中該移除緩衝槽及該氣體移除泵經建構及配置，使得在打開該下游反應室閥門時，該移除緩衝槽從該反應室內抽吸一或多種氣體；其中該一或多個上游及下游反應室閥門包含在該反應室上游之一分佈反應室閥門，其中該氣態第一及第二前驅體經組態以流動通過該分佈緩衝槽及該分佈反應室閥門，其中該分佈緩衝槽在該分佈反應室閥門上游並且藉由各自在該分佈緩衝槽上游之第一及第二前驅體閥門與該氣態第一及第二前驅體之第一及第二源分開。
  13. 如請求項12之裝置，其中，該分佈緩衝槽儲存該氣態第一或第二前驅體且該分佈緩衝槽之一容積在該反應室之容積的0.1與15倍之間。
  14. 如請求項12之裝置，其中，該裝置設置有一第三加熱系統，該第三加熱系統經建構及配置以控制該氣態第一及第二前驅體之該第一及第二源之溫度。
  15. 如請求項12之裝置，其中，該分佈緩衝槽溫度比該製程溫度高0℃至50℃。
  16. 如請求項12之裝置，其中，該製程溫度在20℃與450℃之間且該順序控制器經建構及配置以維持該反應室中之一壓力在0.001與1000托之間。
  17. 如請求項12之裝置，其中，該分佈緩衝槽設置有一直接液體噴射器(DLI)氣化器以將該各別前驅體直接注入該緩衝槽中。
  18. 如請求項12之裝置，其中，該分佈緩衝槽包含一撓性波紋管以適應該緩衝槽中之不同容積。
  19. 如請求項12之裝置，其中，該分佈緩衝槽設置於該反應室中或靠近該反應室之頂部。
  20. 如請求項12之裝置，其中，該移除緩衝槽之一容積在該反應室之該容積的1與20倍之間，以便當該等一或多個上游及下游反應室閥門中之一者打開時，將氣體引入於該移除緩衝槽中。
  21. 如請求項12之裝置，其中，該裝置包含一鼓泡器用於在第一持續時間T1期間提供一不連續的第一前驅體流，該第一前驅體流具有0.5至20秒之該第一前驅體的脈衝，其與0.1至5秒之一惰性氣體的脈衝交替。
  22. 如請求項12之裝置，其中，該反應室包含一噴淋頭，該噴淋頭設置於該反應室之該頂部且與該前驅體分佈及移除系統連接以向該基板之表面提供該第一或第二前驅體。
  23. 如請求項22之裝置，其中，該前驅體分佈及移除系統包含可與該噴淋頭連接的一沖洗系統以沖洗該反應室。
  24. 一種連續滲入合成裝置，其包含：一反應室，其設置有一基板固持器以固持至少二個基板；一前驅體分佈及移除系統，其包含一或多個上游及下游反應室閥門以向該反應室提供一氣態第一或第二前驅體以及自該反應室移除該氣態第一或第二前驅體；以及一順序控制器，其可操作地連接至該一或多個上游及下游閥門且經程式化以使該氣態第一及第二前驅體能連續滲入設置於該反應室中之該二個 基板上的一可滲入材料，其中在不移除任何前驅體的同時，該順序控制器利用該前驅體分佈及移除系統將該第一前驅體提供至該反應室歷時一裝載期LP，致使壓力在該反應室中積累，且當該氣態第一或第二前驅體在該反應室中之該壓力達到一所需滲入壓力時，終止該裝載期LP，其中該可滲入材料為多孔的，且其中該反應室包含至少二個反應空間，各反應空間經建構及配置以容納一單一基板，且：各反應空間連接至該前驅體分佈及移除系統之一共用上游反應室閥門以自一上游分佈緩衝槽同時向該至少二個反應空間提供該第一或第二前驅體；及各反應空間連接至該前驅體分佈及移除系統之一共用下游反應室閥門以自該至少二個反應空間同時將該第一或第二前驅體移除至一下游移除緩衝槽，該下游移除緩衝槽之容積大於該反應室之容積，其中該下游移除緩衝槽及氣體移除泵經建構及配置，使得在打開該共用下游反應室閥門時，該下游移除緩衝槽從該反應室內抽吸一或多種氣體；其中該反應室包含一可移動主體以固持該二個基板，其中該可移動主體經組態以與密封件接合以界定及產生該二個反應空間。
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