JP7048611B2 - 基材上に構造を形成する方法 - Google Patents
基材上に構造を形成する方法 Download PDFInfo
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- JP7048611B2 JP7048611B2 JP2019531445A JP2019531445A JP7048611B2 JP 7048611 B2 JP7048611 B2 JP 7048611B2 JP 2019531445 A JP2019531445 A JP 2019531445A JP 2019531445 A JP2019531445 A JP 2019531445A JP 7048611 B2 JP7048611 B2 JP 7048611B2
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- 239000000758 substrate Substances 0.000 title claims description 51
- 239000000463 material Substances 0.000 claims description 102
- 239000002243 precursor Substances 0.000 claims description 100
- 238000000034 method Methods 0.000 claims description 99
- 238000006243 chemical reaction Methods 0.000 claims description 79
- 239000007789 gas Substances 0.000 claims description 32
- 238000010926 purge Methods 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 16
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 15
- 238000001764 infiltration Methods 0.000 claims description 14
- 230000008595 infiltration Effects 0.000 claims description 14
- 229920001400 block copolymer Polymers 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- TUTOKIOKAWTABR-UHFFFAOYSA-N dimethylalumane Chemical compound C[AlH]C TUTOKIOKAWTABR-UHFFFAOYSA-N 0.000 claims description 12
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 claims description 12
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 claims description 11
- 238000000059 patterning Methods 0.000 claims description 10
- -1 alkyl compound Chemical class 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 4
- 239000007800 oxidant agent Substances 0.000 claims description 4
- 238000001338 self-assembly Methods 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 229910001507 metal halide Inorganic materials 0.000 claims description 3
- 150000005309 metal halides Chemical class 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 3
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 claims description 3
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 claims description 3
- LQIIEHBULBHJKX-UHFFFAOYSA-N 2-methylpropylalumane Chemical compound CC(C)C[AlH2] LQIIEHBULBHJKX-UHFFFAOYSA-N 0.000 claims description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 230000003204 osmotic effect Effects 0.000 claims description 2
- 238000005086 pumping Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 description 28
- 238000000137 annealing Methods 0.000 description 16
- 238000000151 deposition Methods 0.000 description 11
- 229920000642 polymer Polymers 0.000 description 11
- 230000008021 deposition Effects 0.000 description 10
- 238000009826 distribution Methods 0.000 description 8
- 230000000149 penetrating effect Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 229910052726 zirconium Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000002408 directed self-assembly Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229920000390 Poly(styrene-block-methyl methacrylate) Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- SEQDDYPDSLOBDC-UHFFFAOYSA-N Temazepam Chemical compound N=1C(O)C(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 SEQDDYPDSLOBDC-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
反応チャンバー内で基材にハードマスク材料を提供すること、および
一つまたは複数の浸透サイクル中にハードマスク材料を浸透材料で浸透させることを含む。当該サイクルは:
a) 第一の期間T1の間、反応チャンバー内の基材上のハードマスク材料に第一の前駆体を提供すること、
b) 第一の前駆体の一部を第二の期間T2の間、反応チャンバーから除去すること、および、
c) 第三の期間T3の間、基材上のハードマスク材料に第二の前駆体を提供し、第一および第二の前駆体に相互反応させてハードマスク材料内に浸透材料を形成させることを含む。
第一の期間T1の間、反応チャンバー内の基材上のハードマスク材料に第一の前駆体を提供する工程120a、
第一の前駆体の一部を第二の期間T2の間、除去する工程120b、および、
第三の期間T3の間、基材上のハードマスク材料に第二の前駆体を提供し、第一および第二の前駆体に相互反応させて浸透材料を形成させ、ハードマスク材料の強化をもたらす工程120cを含む。
本発明は以下の態様を含む。
[1]
基材上に構造を形成する方法であって、
反応チャンバー内で前記基材にハードマスク材料を提供すること、および
a) 第一の期間T1の間、前記反応チャンバー内の前記基材上の前記ハードマスク材料に第一の前駆体を提供すること、
b) 第二の期間T2の間、前記第一の前駆体の一部を前記反応チャンバーから除去すること、および、
c) 第三の期間T3の間、前記基材上の前記ハードマスク材料に第二の前駆体を提供し、前記第一および第二の前駆体に相互反応させて前記ハードマスク材料内に浸透材料を形成させること、を含む一つまたは複数の浸透サイクル中に前記ハードマスク材料を浸透材料で浸透させること、を含む、方法。
[2]
前記方法が、
前記ハードマスク材料の上方にパターン付き層を提供すること、および、
前記パターン付き層のパターンを前記ハードマスク材料内にエッチングしてパターン付きハードマスクを形成すること、を含む、[1]に記載の方法。
[3]
前記パターン付き層を前記ハードマスク材料の上方に提供することが、
前記ハードマスク材料上にフォトレジスト層を提供すること、および、
リソグラフィー装置を用いて前記フォトレジスト層をパターニングすること、を含む、
請求項2に記載の方法。
[4]
パターン付き層を前記ハードマスク材料の上方に提供することが、
前記ハードマスク材料上にブロックコポリマー膜を提供すること、および、
前記ブロックコポリマー膜の誘導自己組織化を促進して、前記パターン付き層を形成すること、を含む、請求項2に記載の方法。
[5]
前記一つまたは複数の浸透サイクルが、
d) 第四の期間T4の間、前記第二の前駆体の一部を除去することであって、前記一つまたは複数の浸透サイクルが1~60回である、除去すること、を含む、[1]に記載の方法。
[6]
前記マスク材料が多孔性である、[1]に記載の方法。
[7]
前記ハードマスク材料が、スピンオンガラスまたはスピンオンカーボン層を含む、[1]に記載の方法。
[8]
前記ハードマスク材料が、窒化ケイ素層を含む、[1]に記載の方法。
[9]
前記ハードマスク材料が、反射防止コーティングを含む、[1]に記載の方法。
[10]
前記ハードマスク材料が、アモルファスカーボン、SiCOH、またはSiOC材料を含む、[1]に記載の方法。
[11]
前記第一および/または第二の前駆体を除去することが、前記第一または第二の前駆体を前記反応チャンバーからポンプで排出させることを含む、[1]に記載の方法。
[12]
前記第一および/または第二の前駆体を除去することが、前記反応チャンバー内にパージガスを提供して前記第一および/または第二の前駆体をパージ除去することを含む、請求項1に記載の方法。
[13]
前記方法が、
少なくとも二つの反応チャンバーを備える逐次的浸透合成装置を提供することであって、各チャンバーが単一の基材を収容するよう構成および配置される、提供することと、
基材を各反応チャンバーに提供することと、
前記第一および/または第二の前駆体を、共通の前駆体供給システムを備える少なくとも二つの反応チャンバーに提供することと、を含む、[1]に記載の方法。
[14]
N浸透サイクル中に、前記ハードマスク材料を浸透材料で浸透させる前に、前記反応チャンバーが20~600℃の温度で1~3000秒間パージされる、[1]に記載の方法。
[15]
前記方法が、前記反応チャンバーを20~450℃の温度に加熱することを含む、[1]に記載の方法。
[16]
前記方法が、
前記反応チャンバー、排気ラインおよびバルブのすべての表面を20~450℃に加熱することを含む、[1]に記載の方法。
[17]
前記チャンバー内の圧力は、0.001~1000Torrである、[1]に記載の方法。
[18]
前記浸透材料が金属を含む、[1]に記載の方法。
[19]
前記第一または第二の前駆体が、トリメチルアルミニウム(TMA)、トリエチルアルミニウム(TEA)、およびジメチルアルミニウムハイドライド(DMAH)からなる群から選択されるアルミニウムのアルキル化合物であり、前記浸透材料は前記金属としてアルミニウムを含む、[18]に記載の方法。
[20]
前記第一または第二の前駆体が、塩化チタン(IV)(TiCl4)、タンタル(V)ペンタクロリド(TaCl5)、五塩化ニオブ(NbCl5)を含む、[18]に記載の方法。
[21]
前記第一または第二の前駆体が、水、オゾン、または過酸化水素を含む群から選択される酸化剤、またはアンモニアおよびヒドラジンを含む群から選択される窒化剤である、[1]に記載の方法。
[22]
前記浸透材料は、塩化チタン(IV)(TiCl4)、タンタル(V)ペンタクロリド(TaCl5)、および五塩化ニオブ(NbCl5)からなる群から好ましくは選択される金属ハライドを含む前記第一および第二の前駆体の一方、およびトリメチルアルミニウム(TMA)、トリエチルアルミニウム(TEA)、およびジメチルアルミニウムハイドライド(DMAH)ジメチルエチルアミンアラン(DMEAA)、トリメチルアミンアラン(TEAA)、N-メチルピロリジンアラン(MPA)、トリ-イソブチルアルミニウム(TIBA)、トリtertブチルアルミニウム(TTBA)トリメチルホウ素およびトリエチルホウ素からなる群から好ましくは選択されるアルミニウムまたはホウ素炭化水素化合物を含む前記第一および第二の前駆体の他の一方によって作製される金属炭化物を含む、[18]に記載の方法。
[23]
前記ハードマスク材料がパターン付けされている、[1]に記載の方法。
Claims (19)
- 基材上に構造を形成する方法であって、
反応チャンバー内で前記基材にハードマスク材料を提供すること、および
a) 第一の期間T1の間、前記反応チャンバー内の前記基材上の前記ハードマスク材料に第一の前駆体を提供すること、
b) 第二の期間T2の間、前記第一の前駆体の一部を前記反応チャンバーから除去すること、および、
c) 第三の期間T3の間、前記基材上の前記ハードマスク材料に第二の前駆体を提供し、前記第一および第二の前駆体に相互反応させて前記ハードマスク材料内に浸透材料を形成させること、を含む一つまたは複数の浸透サイクル中に前記ハードマスク材料を浸透材料で浸透させること、を含み、
前記ハードマスク材料が、スピンオンガラス、スピンオンカーボン層、窒化ケイ素層、反射防止コーティング、アモルファスカーボン、SiCOH、またはSiOC材料を含む、
方法。 - 前記方法が、
前記ハードマスク材料の上方にパターン付き層を提供すること、および、
前記パターン付き層のパターンを前記ハードマスク材料内にエッチングしてパターン付きハードマスクを形成すること、を含む、請求項1に記載の方法。 - 前記パターン付き層を前記ハードマスク材料の上方に提供することが、
前記ハードマスク材料上にフォトレジスト層を提供すること、および、
リソグラフィー装置を用いて前記フォトレジスト層をパターニングすること、を含む、
請求項2に記載の方法。 - パターン付き層を前記ハードマスク材料の上方に提供することが、
前記ハードマスク材料上にブロックコポリマー膜を提供すること、および、
前記ブロックコポリマー膜の誘導自己組織化を促進して、前記パターン付き層を形成すること、を含む、請求項2に記載の方法。 - 前記一つまたは複数の浸透サイクルが、
d) 第四の期間T4の間、前記第二の前駆体の一部を除去することであって、前記一つまたは複数の浸透サイクルが1~60回である、除去すること、を含む、請求項1に記載の方法。 - 基材上に構造を形成する方法であって、
反応チャンバー内で前記基材にハードマスク材料を提供すること、および
a) 第一の期間T1の間、前記反応チャンバー内の前記基材上の前記ハードマスク材料に第一の前駆体を提供すること、
b) 第二の期間T2の間、前記第一の前駆体の一部を前記反応チャンバーから除去すること、および、
c) 第三の期間T3の間、前記基材上の前記ハードマスク材料に第二の前駆体を提供し、前記第一および第二の前駆体に相互反応させて前記ハードマスク材料内に浸透材料を形成させること、を含む一つまたは複数の浸透サイクル中に前記ハードマスク材料を浸透材料で浸透させること、を含み、
前記ハードマスク材料が多孔性である、方法。 - 前記第一および/または第二の前駆体を除去することが、前記第一または第二の前駆体を前記反応チャンバーからポンプで排出させることを含む、請求項1に記載の方法。
- 前記第一および/または第二の前駆体を除去することが、前記反応チャンバー内にパージガスを提供して前記第一および/または第二の前駆体をパージ除去することを含む、請求項1に記載の方法。
- 前記方法が、
少なくとも二つの反応チャンバーを備える逐次的浸透合成装置を提供することであって、各チャンバーが単一の基材を収容するよう構成および配置される、提供することと、
基材を各反応チャンバーに提供することと、
前記第一および/または第二の前駆体を、共通の前駆体供給システムを備える少なくとも二つの反応チャンバーに提供することと、を含む、請求項1に記載の方法。 - N浸透サイクル中に、前記ハードマスク材料を浸透材料で浸透させる前に、前記反応チャンバーが20~600℃の温度で1~3000秒間パージされる、請求項1に記載の方法。
- 前記方法が、前記反応チャンバーを20~450℃の温度に加熱することを含む、請求項1に記載の方法。
- 前記方法が、
前記反応チャンバー、排気ラインおよびバルブのすべての表面を20~450℃に加熱することを含む、請求項1に記載の方法。 - 前記チャンバー内の圧力は、0.001~1000Torrである、請求項1に記載の方法。
- 前記浸透材料が金属を含む、請求項1に記載の方法。
- 前記第一または第二の前駆体が、トリメチルアルミニウム(TMA)、トリエチルアルミニウム(TEA)、およびジメチルアルミニウムハイドライド(DMAH)からなる群から選択されるアルミニウムのアルキル化合物であり、前記浸透材料は前記金属としてアルミニウムを含む、請求項14に記載の方法。
- 前記第一または第二の前駆体が、塩化チタン(IV)(TiCl4)、タンタル(V)ペンタクロリド(TaCl5)、五塩化ニオブ(NbCl5)を含む、請求項14に記載の方法。
- 前記第一または第二の前駆体が、水、オゾン、または過酸化水素を含む群から選択される酸化剤、またはアンモニアおよびヒドラジンを含む群から選択される窒化剤である、請求項1に記載の方法。
- 前記浸透材料は、塩化チタン(IV)(TiCl4)、タンタル(V)ペンタクロリド(TaCl5)、および五塩化ニオブ(NbCl5)からなる群から好ましくは選択される金属ハライドを含む前記第一および第二の前駆体の一方、およびトリメチルアルミニウム(TMA)、トリエチルアルミニウム(TEA)、およびジメチルアルミニウムハイドライド(DMAH)ジメチルエチルアミンアラン(DMEAA)、トリメチルアミンアラン(TEAA)、N-メチルピロリジンアラン(MPA)、トリ-イソブチルアルミニウム(TIBA)、トリtertブチルアルミニウム(TTBA)トリメチルホウ素およびトリエチルホウ素からなる群から好ましくは選択されるアルミニウムまたはホウ素炭化水素化合物を含む前記第一および第二の前駆体の他の一方によって作製される金属炭化物を含む、請求項14に記載の方法。
- 前記ハードマスク材料がパターン付けされている、請求項1に記載の方法。
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