TW202136557A - 在基材表面上沉積含碳材料之方法、使用上述方法形成之結構及用於形成上述結構之系統 - Google Patents
在基材表面上沉積含碳材料之方法、使用上述方法形成之結構及用於形成上述結構之系統 Download PDFInfo
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Abstract
所揭示者係用於以含碳材料填充基材表面上的凹部之方法及系統。例示性方法包括在凹部內形成第一碳層、蝕刻凹部內之第一碳層的一部分、及在凹部內形成第二碳層。亦揭示使用上述方法或系統形成之結構。
Description
本揭露大致上係關於形成適於用在電子裝置之製造中的結構之方法。更具體地,本揭露之實例係關於在結構形成期間以含碳材料填充間隙之方法。
在裝置(諸如半導體裝置)之製造期間,常係所欲的是在具有絕緣或介電材料之基材表面上填充特徵(例如,溝槽或間隙)。一些填充特徵的技術包括沉積含碳材料。
雖然使用含碳材料填充特徵針對一些應用可運作良好,具體地,隨著欲填充之特徵的大小減小,使用傳統的沉積技術填充特徵具有若干缺點。例如,在含碳材料的沉積期間,可能會在所沉積的材料內(具體係在間隙內)形成孔洞。甚至在使沉積材料回流之後,此類孔洞還可能會餘留。進一步地,所沉積之含碳材料可形成非所欲之波狀或粗糙的頂表面。非所欲之波狀或粗糙的頂表面可有害地影響後續處理步驟(諸如圖案化、蝕刻、及/或沉積步驟)。
隨著裝置及特徵的大小持續減小,逐漸變得難以將習知的含碳材料沉積技術應用於製造製程。因此,所欲的是用於形成結構之改善方法,具體針對形成結構之方法,該等方法包括以含碳材料填充間隙、緩解含碳材料中的孔洞形成、及/或提供含碳材料之更平滑的頂表面。
本節提出之任何討論(包括問題及解決方案之討論)僅為了提供本揭露背景之目的而包括在本揭露中,且不應視為承認討論之任何或全部內容在完成本發明時已知或以其他方式構成先前技術。
本揭露之各種實施例係關於形成適於用在電子裝置形成中的結構之方法。雖然在下文更詳細地討論本揭露之各種實施例應對先前方法及結構之缺點的方式,大致上,本揭露之例示性實施例提供用於以含碳材料填充一基材表面上的特徵及/或形成包含碳的層或膜之改善方法。
根據本揭露之各種實施例,提供填充基材表面上之凹部之方法。例示性方法可包括在反應器之反應空間中提供基材,基材包含表面,表面包含凹部;在凹部內形成第一碳層,其中第一碳層初始可係可流動的;蝕刻凹部內之第一碳層的部分;及在凹部內形成第二碳層。第二碳層初始亦可係可流動的。例示性方法可進一步包括蝕刻第二碳層的部分之步驟。方法可進一步包括形成第三(或頂部)碳層,其上覆於第二碳層。在形成第三碳層的步驟之前,形成第二碳層及蝕刻第二碳層的部分之步驟可重複若干次。在一些情況下,第一碳層可填充凹部達至少基材之頂表面。在此類情況下,蝕刻第一碳層的部分之步驟可包括蝕刻第一碳層直到凹部內之第一碳層之表面低於頂表面。根據本揭露之進一步的實例,第二碳層可填充凹部達至少基材之頂表面。蝕刻第二碳層的部分之步驟亦可包括蝕刻第二碳層直到凹部內之第二碳層之表面低於頂表面。含碳層之一或多者可使用循環沉積製程(諸如電漿增強循環沉積製程)沉積。電漿增強循環沉積製程可包括提供稀釋氣體(諸如氬或氦)至遠端或直接電漿單元以用於點燃及維持電漿。例示性方法可進一步包含處理步驟以處理等碳層之一或多者。處理步驟可包括電漿處理步驟(例如,使用由氬、氦、氮、及氫之一或多者形成之物種進行處理)。各種蝕刻步驟可使用電漿增強蝕刻製程執行。
根據本揭露之再進一步的例示性實施例,至少部分地根據本文所述之方法形成結構。
根據本揭露之再進一步的例示性實施例,提供一種系統,以用於執行如本文所述之方法及/或用於形成如本文所述之結構。
所屬技術領域中具有通常知識者將從已參照隨附圖式之某些實施例的下列詳細描述輕易明白這些及其他實施例;本發明並未受限於任何已揭示的(多個)特定實施例。
雖然在下文揭示某些實施例及實例,所屬技術領域中具有通常知識者將了解本發明延伸超出本發明及其明顯的修改與等同物之具體揭示的實施例及/或用途。因此,意欲使所揭示之本發明的範疇不應受下文所述之具體揭示實施例的限制。
本揭露大致上係關於沉積材料之方法、形成結構之方法、使用上述方法形成之結構、及用於執行上述方法及/或形成上述結構之系統。舉實例而言,本文所述之方法可用以使用材料(諸如含碳(例如介電)材料)填充基材表面上之特徵(諸如間隙,例如溝槽或貫孔)。用語間隙(gap)及凹部(recess)可互換地使用。
欲緩解孔洞及/或縫之形成,含碳材料初始可係可流動的,並在間隙內流動以從底部向上填充間隙。本文所述之例示性結構可用在各種應用中,包括,但不限於3D交叉點記憶體裝置中的晶胞隔離、自對準貫孔、虛擬閘極、反相圖案、PC RAM隔離、切割硬遮罩、DRAM儲存節點接觸(SNC)隔離、及類似者。
在本揭露中,「氣體(gas)」可指在常溫及常壓下為氣體之材料、汽化固體、及/或汽化液體,並可取決於上下文由單一氣體或氣體混合物構成。有別於製程氣體的氣體(亦即,非通過氣體分配總成(諸如噴淋頭)、其他氣體分配裝置、或類似者引入的氣體)可用於例如密封反應空間,該氣體包括密封氣體(諸如,稀有氣體)。在一些情況下(諸如在材料沉積之背景下),用語「前驅物(precursor)」可指參與生成另一化合物之化學反應的化合物,且具體係指構成膜基質或膜之主要架構的化合物,而用語「反應物(reactant)」可指在一些情況下有別於前驅物之化合物,其使前驅物活化、對前驅物進行改質、或催化前驅物之反應;當例如施加射頻(RF)功率時,反應物可提供元素(諸如,O、H、N、C)至膜基質,並成為膜基質之一部分。在一些情況下,用語前驅物(precursor)及反應物(reactant)可互換地使用。用語「惰性氣體(inert gas)」係指當例如施加RF功率時,在可察覺的程度上不參與化學反應的氣體及/或激發前驅物的氣體,但不像反應物,該惰性氣體無法在可察覺的程度上變為膜基質之一部分。
如本文所使用,用語「基材(substrate)」可指可用以形成或在其上可形成裝置、電路、或膜之任何(多個)下伏材料。基材可包括塊材(諸如矽(例如單晶矽))、其他IV族材料(諸如鍺)、或化合物半導體材料(諸如GaAs),並可包括上覆或下伏於塊材的一或多層。進一步地,基材可包括各種特徵(諸如間隙(例如凹部或貫孔)、線或突起部(諸如具有形成於其等之間的間隙之線)、及類似者),該等特徵經形成在基材之層或塊材的至少一部分之內或之上。舉實例而言,一或多個特徵可具有約10 nm至約100 nm的寬度,約30 nm至約1000 nm的深度或高度,及/或約3至100或約3至約20的深寬比。
在一些實施例中,「膜(film)」係指在垂直於厚度方向的方向上延伸的層。在一些實施例中,「層(layer)」係指形成於表面上之具有特定厚度之材料並可係膜或非膜結構之同義詞。膜或層可由具有某些特性之離散單一膜或層或者由多個膜或層構成,且相鄰膜或層之間的邊界可以明確或可以不明確,且可以基於或可以不基於物理、化學、及/或任何其他特性、形成製程或序列、及/或相鄰膜或層之功能或用途而建立。層或膜可係連續的或者不連續的。
如本文中所使用,用語「碳層(carbon layer)」或「含碳材料(carbon-containing material)」可指其化學式可表示為包括碳的層。包含含碳材料的層可包括其他元素(諸如氮及氫之一或多者)。
如本文中所使用,用語「結構(structure)」可指部分或完全製造的裝置結構。舉實例而言,結構可包括具有形成在其上之一或多個層及/或特徵的基材。
如本文中所使用,用語「循環沉積製程(cyclic deposition process)」可指氣相沉積製程,其中沉積循環(一般係複數個接續的沉積循環)係在製程室中實施。循環沉積製程可包括循環化學氣相沉積(CVD)及原子層沉積製程。循環沉積製程可包括一或多個循環,其(等)包括前驅物、反應物、及/或惰性氣體之電漿活化。
如本文中所使用,用語「原子層沉積(atomic layer deposition, ALD)」可指氣相沉積製程,其中沉積循環(一般係複數個接續的沉積循環)係在製程室中實施。一般而言,在各循環期間,前驅物係化學吸附至沉積表面(例如基材表面或先前沉積的下伏表面,諸如來自先前ALD循環的材料),形成不易與額外前驅物起反應的單層或次單層(亦即,自限制反應)。其後,可隨後將反應物(例如,另一前驅物或反應氣體/反應物)引入製程室中,以用於在沉積表面上將經化學吸附之前驅物轉化為所欲材料。一般而言,此反應物能夠進一步與前驅物起反應。進一步地,亦可在各循環期間利用沖洗步驟以從製程室移除任何過量前驅物及/或在轉化經化學吸附之前驅物之後從製程室移除任何過量反應物及/或反應副產物。進一步地,當使用(多個)前驅物組成物、反應性氣體、及沖洗(例如惰性載體)氣體的交替脈衝執行時,如本文中所使用之用語「原子層沉積(atomic layer deposition)」亦意指包括由相關用語指定的製程,諸如,化學氣相原子層沉積(chemical vapor atomic layer deposition)、原子層磊晶(atomic layer epitaxy, ALE)、分子束磊晶(molecular beam epitaxy, MBE)、氣體源MBE、或有機金屬MBE、及化學束磊晶。電漿增強ALD (Plasma-enhanced ALD, PEALD)可指ALD製程,其中電漿係在ALD步驟之一或多者期間施加。
在本揭露中,於一些實施例中且取決於上下文,「連續地(continuously)」係指不中斷真空、在時間線上無中斷、無任何材料插入步驟、未改變處理條件、其後立即、作為下一步驟、或在兩結構間無有別於該兩結構之插入的離散物理或化學結構。
流動性(例如初始流動性)可判定如下:
表1
其中B/T係指凹部經填充之前,沉積在凹部之底部處的膜厚度對沉積在形成凹部之頂表面上之膜厚度的比率。一般而言,流動性係使用具有約1或更小的深寬比之寬凹部來評估,因為通常凹部的深寬比越高,B/T的比率變得越高。當凹部的深寬比較高時,B/T比率變得較高。流動性一般係在膜經沉積於具有約1或更小之深寬比的寬凹部中時進行評估。如本文中所使用,「可流動的(flowable)」膜或材料展現良好或更佳的流動性。
底部/頂部比率(B/T) | 流動性 |
0< B/T <1 | 無 |
1≤ B/T <1.5 | 不良 |
1.5≤ B/T <2.5 | 良好 |
2.5≤ B/T <3.5 | 很好 |
3.5≤ B/T | 極好 |
如下文更詳細提出的,例如,當揮發性烴前驅物藉由電漿聚合並沉積在基材表面上時,可暫時得到膜的流動性,其中氣態前驅物係藉由電漿氣體放電所提供的能量活化或分裂以便啟動聚合,且當所得之聚合物材料經沉積在基材表面上時,材料顯示暫時可流動的行為。當完成沉積步驟時,可流動膜不再可流動而係經固化的,且因此可不使用分開的固化製程。
在本揭露中,變數之任兩個數字可構成變數之可工作範圍,且所指示之任何範圍可包括或排除端點。此外,所指示的變數之任何數值(不管該等數值是否以「約」來指示)可指精確值或近似值並包括等效值,且在一些實施例中可指平均值、中值、代表值、多數值等。進一步地,在本揭露中,於一些實施例中,用語「包括(including)」、「由……構成(constituted by)」、及「具有(having)」可獨立地指「一般或廣泛地包含(typically or broadly comprising)」、「包含(comprising)」、「基本上由……組成(consisting essentially of)」、或「由……組成(consisting of)」。在本揭露中,於一些實施例中,任何已定義之意義未必排除尋常及慣例意義。
現轉向圖式,圖1繪示根據本揭露之例示性實施例之填充基材表面上的凹部之方法100。圖2繪示在碳層沉積期間可引發的問題。圖3及圖4繪示方法100期間可形成之結構的部分。圖5繪示根據本揭露之實例之反應器系統。
參照圖1,方法100包括下列步驟:在反應空間內提供基材(步驟102)、形成第一碳層(步驟104)、蝕刻凹部內之第一碳層的一部分(步驟106)、及形成第二碳層(步驟108)。如所繪示,方法100亦可包括下列步驟:蝕刻第二碳層的一部分(步驟110)及形成第三碳層(步驟112)。如本文中所使用,「第一碳層(first carbon layer)」可指在步驟106之前沉積的碳層;「第二碳層(second carbon layer)」可指在步驟112之前沉積的一或多個中間碳層。換言之,如本文所述之結構可包括多個第二碳層,其等可藉由重複步驟108及110來形成,如經由迴圈114所示者。
在步驟102期間,提供基材至反應器之反應室中。根據本揭露之實例,反應室可形成循環沉積反應器(諸如原子層沉積(ALD)(例如PEALD)反應器或化學氣相沉積(CVD) (例如PECVD)反應器)的部分。方法100的各種步驟可在單一反應室內執行或者可在多個反應室(諸如叢集工具的反應室)中執行。
在步驟102期間,可使基材處於所欲溫度及/或可使反應室處於所欲壓力(諸如步驟104期間合適的溫度及/或壓力)。舉實例而言,反應室內之(例如,基材或基材支撐之)溫度可係介於約20°C與約100°C之間或小於100°C。反應室內之壓力可從約200 Pa至約1,250 Pa。
圖3(a)示意地繪示具有形成在其上之特徵304之基材302的頂部部分,其中間隙306經形成在特徵304之間。如可理解的,基材302的表面308及本文所繪示的其他結構可經誇大以說明本揭露之實施例。進一步地,如上文所提及的,基材302可包括額外的層及/或特徵。
在步驟104期間,繪示於圖3(b)之第一碳層310係沉積在基材上。用於在基材表面上沉積第一碳層310之例示性技術包括循環沉積製程(諸如PECVD、PEALD、或混合式PECVD/PEALD技術)。對包括PECVD之製程而言,電漿功率可經脈衝及/或經由電漿形成之活化物種可經脈衝至反應。
例示性循環或PEALD製程可包括下列子步驟:使基材暴露至前驅物、沖洗反應室、使基材暴露至反應物(例如電漿活化反應物)、沖洗反應室、及重複這些步驟直到得到初始所欲的碳層厚度。反應室內及/或基座的溫度可相同或類似於步驟102期間的溫度。類似地,反應室內的壓力可係如上文連同步驟102所述者。在步驟104期間(例如,在反應物或活化反應物脈衝期間)經施加至電極的功率範圍可從約50 W至約300 W。功率的頻率範圍可從約2.0 MHz至約27.12 MHz。
使基材暴露至前驅物可包括提供由式Cx
Hy
Nz
表示之前驅物,其中x係大於或等於2的自然數、y係自然數、且z係零或自然數。例如,x的範圍可從約2至約15、y的範圍可從約4至約30、且z的範圍可從約0至約10。前驅物可包括鏈狀或環狀分子,其具有二或更多個碳原子及一或多個氫原子(諸如由上式表示的分子)。舉具體實例而言,前驅物可係或可包括一或多個芳香烴結構。
前驅物從前驅物源至反應室的流量率可從約0.1 slm至約2.0 slm。各使基材暴露至前驅物的子步驟之持續時間可從約0.1秒至約5.0秒。
沖洗反應室的步驟可包括使惰性氣體流至反應室及/或在反應室內提供真空壓力。沖洗氣體至反應室的流量率可從約0.1 slm至約2.0 slm。各沖洗子步驟的持續時間可從約0.1秒至約5.0秒。
使基材暴露至反應物的子步驟可包括提供含氧氣體(諸如氧及N2
O)、含氫氣體(諸如氫)、含氮氣體(諸如氮及N2
O)、及/或一或多個惰性氣體(諸如氬及/或氦)之一或多者至反應室。反應物可以載體氣體(諸如氮及/或惰性氣體)稀釋。舉實例而言,反應物氣體可包括氦。
反應物(包括任何載體氣體)從反應物源至反應室的流量率可從約0.1 slm至約4.0 slm。各使基材暴露至反應物的子步驟之持續時間可從約0.1秒至約0.5秒。
根據本揭露之例示性態樣,活化物種係藉由使反應物氣體暴露至射頻及/或微波電漿來形成。可使用直接電漿及/或遠端電漿來形成活化物種。在一些情況下,反應物可連續地流至反應室,且反應物可針對循環沉積製程週期性地活化。在這些情況下,針對各循環之用於電漿的供應時間可從約0.5秒至約10.0秒。
步驟104之子步驟可執行若干次直到得到所欲的膜厚度。進一步地,可在繼續進行至下一步驟之前重複子步驟的子集。
在循環CVD的情況下,反應物及前驅物可同時引入反應室中。反應物及/或反應副產物可如本文所述般進行沖洗。進一步地,可使用混合式CVD/PECVD-ALD/PEALD製程,其中反應物及前驅物可持續一段時間以氣相起反應,且其中發生某些ALD。
在步驟104期間,所沉積的材料初始可流動。其後,第一碳層310可變為固態。
圖2及圖3(b)分別繪示結構200及314,其等可在步驟104期間形成。如所繪示,結構200可包括孔洞202及波狀表面204。類似地,結構314包括形成在同樣經沉積之第一碳層310內的孔洞312。在無進一步處理的情況下,結構200及314將包括非所欲的波狀表面,並可包括非所欲的縫及/或孔洞。
根據本揭露之具體實例,如圖3(b)所繪示,可沉積第一碳層310直到第一碳層310填充凹部306達至少基材302的頂表面316。然而,除非另加陳述,否則不必是如此情況。
在步驟106期間,凹部306內之第一碳層310的一部分經蝕刻,如圖3(c)所繪示者。在所繪示之情況下,第一碳層310的一部分係經移除,使得凹部306內餘留的第一碳層材料322之表面318低於頂表面316。在所繪示之情況下,孔洞312係打開以形成開放孔洞320。此允許開放孔洞320使用下述之後續步驟填充。
在步驟106期間,蝕刻劑係流至反應室。例示性蝕刻劑包括含氧氣體(諸如氧)或含氫氣體(諸如氫)。在這些情況下,氣體包括惰性氣體中之從約5.0 %至約50.0 %的含氧氣體或含氫氣體。在一些情況下,蝕刻劑可包括氧、氫、氬、氦、及氮之一或多者。氣體(例如含氧氣體及任何惰性氣體)的流量率範圍可從約1.0 slm至約4.0 slm。
可使用直接及/或遠端電漿由氣體(例如含氧氣體或含氫氣體及任何惰性氣體)形成活化物種。在步驟106期間經施加至電極的功率範圍可從約100 W至約800 W。功率的頻率範圍可從約2.0 MHz至約27.12 MHz。
根據本揭露之各種實施例,步驟106期間之反應室內的溫度係低於100 °C或介於約20 °C與約100 °C之間。步驟106期間之反應室內的壓力可從約200 Pa至約1,250 Pa。
在步驟108期間,繪示於圖3(d)之第二碳層324係沉積為上覆於基材302。用於在基材表面上沉積第二碳層324之例示性技術包括循環沉積製程(諸如PECVD、PEALD、或混合式PECVD/PEALD技術,諸如上文連同步驟104所述者)。步驟108期間的反應室壓力、反應室溫度、及/或電漿功率條件(例如功率及頻率)可係相同或類似於上文連同步驟104所述者。類似地,步驟108期間可使用與步驟104期間所用者相同或類似的前驅物及/或反應物。如所繪示,可沉積第二碳層324直到第二碳層324的表面326高於基材表面316。如進一步所繪示,表面326仍可展現非所欲的波狀表面。
在步驟110期間,第二碳層324的一部分係經蝕刻或以其他方式移除,如圖3(e)所繪示者。在所繪示之情況下,第二碳層324的一部分係經移除,使得餘留的第二碳層材料330之表面328高於基材302的頂表面316。進一步地,步驟110可形成實質上平面狀(非波狀)的表面328。
根據本揭露之各種實施例,步驟108期間之反應室內的溫度係低於100 °C或介於約20 °C與約100 °C之間。步驟108期間之反應室內的壓力可從約200 Pa至約1,250 Pa。在步驟108期間經施加至電極的功率範圍可從約50 W至約300 W。功率的頻率範圍可從約2.0 MHz至約27.12 MHz。
如圖1所繪示,步驟108及110可經由迴圈114重複若干次以形成結構332。在一些情況下,如上文所提及的,步驟108的至少一例子可包括沉積第二碳層直到第二層填充凹部306達至少頂表面316。在這些情況下,步驟110之至少一發生可包括蝕刻第二碳層的一部分,直到凹部內之第二碳層的表面低於頂表面;然而,在其他情況下,蝕刻/移除步驟並未移除第二碳層使其低於頂表面316。在最後一次的步驟110之後,餘留的第二碳層材料330較佳地高於頂表面316。
參照圖1及圖3(f),在步驟112期間,第三碳層334可沉積在餘留的第二碳層材料330之上方。步驟112期間的反應室壓力、反應室溫度、及/或電漿功率條件(例如功率及頻率)可係相同或類似於上文連同步驟104及108所述者。類似地,步驟112期間可使用與步驟104及108期間所用者相同或類似的前驅物及/或反應物。
可在相同反應室內執行步驟102至104或子步驟或其等之任何組合之各者。替代地,可將(例如相同叢集工具之)多個反應室用於步驟或子步驟之一或多者。
再次參照圖1,步驟104、108、及112之一或多者可包括處理步驟。處理步驟可包括電漿處理步驟。例示性電漿處理步驟可包括使第一碳層、第二碳層、及第三碳層的一或多者暴露至使用直接電漿及遠端電漿之一或多者形成的物種。上述物種可由氬、氦、氮、及氫之一或多者(例如氬及氦之組合或氮及氫之組合)形成。為處理而形成物種期間之反應室內的溫度可係小於100 °C或介於約20 °C與約100 °C之間。用於處理而形成物種期間之反應室內的壓力可從約200 Pa至約1,250 Pa。在用於處理而形成物種期間經施加至電極的功率範圍可從約100 W至約800 W。功率的頻率範圍可從約2.0 MHz至約27.12 MHz。用於處理而形成物種之步驟可在用於步驟102至112之一或多者的相同反應室中形成或者可係分開的反應室(諸如相同叢集工具的另一反應室)。
圖4繪示步驟104之後(圖4(a))、步驟106之後(圖4(b))、及步驟108之後(圖4(c))的掃描穿透式電子顯微鏡影像。在所繪示之實例中,第二碳層的頂表面係相對平滑。
圖5繪示根據本揭露之例示性實施例之反應器系統500。反應器系統500可用以執行如本文所述之一或多個步驟或子步驟及/或用以形成如本文所述之一或多個結構或其等之部分。
反應器系統500包括在反應室3之內部11(反應區)中平行且面向彼此的一對導電平板電極4、2。可藉由從功率源25施加例如HRF功率(例如13.56 MHz或27 MHz)至一電極(例如電極4)並將另一電極(例如電極2)電氣接地而在反應室3內激發電漿。溫度調節器係在下部台2(下部電極)中提供,且放置在其上之基材1的溫度可保持在所欲溫度。電極4可充當氣體分配裝置(諸如噴淋板)。可分別使用氣體管線20、氣體管線21、及氣體管線22之一或多者並通過噴淋板4將反應物氣體、稀釋氣體(若有的話)、前驅物氣體、及/或蝕刻劑引入反應室3中。雖然經繪示為具有三個氣體管線,反應器系統500可包括任何合適數目的氣體管線。
在反應室3中,提供具有排氣管線7之圓管13,可通過其排出反應室3之內部11中的氣體。此外,設置在反應室3下方之傳送室5具備密封氣體管線24,以經由傳送室5的內部16(傳送區)將密封氣體引入至反應室3的內部11中,其中提供用於分開反應區與傳送區之分隔板14(此圖式省略閘閥,晶圓係通過閘閥傳送至傳送室5中或從傳送室傳送)。傳送室亦具備排氣管線6。在一些實施例中,沉積、蝕刻、及/或表面處理步驟係在相同反應空間中執行,使得步驟之二或更多者(例如全部)可連續地實施而不使基材暴露至空氣或其他含氧大氣。
在一些實施例中,載體氣體至反應室3之連續流動可使用流通系統(flow-pass system, FPS)來完成,其中載體氣體管線設有具有前驅物儲槽(瓶)的歧路管線,且主要管線與歧路管線經切換,其中當僅欲將載體氣體饋送至反應室時,歧路管線經關閉,而當欲將載體氣體及前驅物氣體兩者均饋送至反應室時,關閉主要管線且載體氣體流過歧路管線並從瓶與前驅物氣體一起流出。以此方式,在反應室無實質上壓力波動的情況下,載體氣體可連續地流入反應室中,並可藉由在主要管線與歧路管線之間切換而以脈衝載送前驅物氣體。
所屬技術領域中具有通常知識者將理解,設備包括一或多個控制器26,其(等)經程式化或以其他方式組態以致使實施如本文所述之一或多個方法步驟。如所屬技術領域中具有通常知識者將理解的,(多個)控制器係與反應器之各種電源、加熱系統、泵、機器人系統、及氣流控制器或閥通訊。
在一些實施例中,可使用雙室反應器(經設置為彼此靠近之用於處理晶圓的兩個區段或隔室),其中反應物氣體及稀有氣體可通過共用管線供應,而前驅物氣體係通過非共用管線供應。
上文所述之本揭露之實例實施例並未限制本發明的範疇,因為這些實施例僅為本發明之實施例之實例。任何等效實施例係意欲屬於本發明之範疇內。實際上,除本文中所示及所述者以外,所屬技術領域中具有通常知識者可由本說明書明白本揭露之各種修改(諸如所述元件之替代可用組合)。此類修改及實施例亦意欲落在隨附之申請專利範圍的範疇內。
1:基材
2:導電平板電極/下部台
3:反應室
4:導電平板電極/噴淋板
5:傳送室
6:排氣管線
7:排氣管線
11:內部
13:圓管
14:分隔板
16:內部
20:氣體管線
21:氣體管線
22:氣體管線
24:密封氣體管線
25:功率源
26:控制器
100:方法
102:步驟
104:步驟
106:步驟
108:步驟
110:步驟
112:步驟
114:迴圈
200:結構
202:孔洞
204:波狀表面
302:基材
304:特徵
306:間隙/凹部/步驟
308:表面
310:第一碳層
312:孔洞
314:結構
316:頂表面
318:表面
320:孔洞
322:第一碳層材料
324:第二碳層
326:表面
328:表面
330:第二碳層材料
332:結構
334:第三碳層
500:反應器系統
當結合下列說明圖式思考時,可藉由參照實施方式及申請專利範圍而導出對本揭露之例示性實施例的更完整了解。
圖1繪示根據本揭露之例示性實施例之方法。
圖2繪示包括碳層的結構之掃描穿透式電子顯微鏡影像。
圖3示意地繪示使用根據本揭露之實例之方法形成的結構。
圖4繪示根據本揭露之例示性實施例形成之結構的掃描穿透式電子顯微鏡影像。
圖5繪示根據本揭露之例示性實施例之系統。
將理解,圖式中之元件係為了簡單及清楚起見而繪示且不一定按比例繪製。例如,圖式中的一些元件之尺寸可相對於其他元件誇大,以幫助提升對本揭露所繪示之實施例的瞭解。
100:方法
102:步驟
104:步驟
106:步驟
108:步驟
110:步驟
112:步驟
114:迴圈
Claims (24)
- 一種填充基材之表面上之凹部之方法,該方法包含下列步驟: 在一反應器之一反應空間中提供一基材,該基材包含一表面,該表面包含一凹部; 在該凹部內形成一第一碳層,其中該第一碳層初始係可流動的; 蝕刻該凹部內之該第一碳層的一部分;及 在該凹部內形成一第二碳層。
- 如請求項1所述之方法,其中該第二碳層初始係可流動的。
- 如請求項2所述之方法,其進一步包含一蝕刻該第二碳層的一部分之步驟。
- 如請求項1至3任一項所述之方法,其進一步包含一形成上覆於該第二碳層之一第三碳層之步驟。
- 如請求項3或4所述之方法,其進一步包含重複該等形成該第二碳層及蝕刻該第二碳層的該部分之步驟。
- 如請求項1至5任一項所述之方法,其中該第一碳層填充該凹部達至少該基材之一頂表面。
- 如請求項1至6任一項所述之方法,其中該蝕刻該第一碳層的一部分之步驟包含蝕刻該第一碳層直到該凹部內之該第一碳層之一表面低於該頂表面。
- 如請求項1至7任一項所述之方法,其中該第二碳層填充該凹部達至少該基材之一頂表面。
- 如請求項1至8任一項所述之方法,其中該蝕刻該第二碳層的一部分之步驟包含蝕刻該第二碳層直到該凹部內之該第二碳層之一表面低於該頂表面。
- 如請求項1至9任一項所述之方法,其中該第一碳層係使用電漿增強化學氣相沉積、電漿增強原子層沉積、及一混合式化學氣相沉積及原子層沉積製程之一或多者形成。
- 如請求項1至10任一項所述之方法,其中該第二碳層係使用電漿增強化學氣相沉積、電漿增強原子層沉積、及一混合式化學氣相沉積及原子層沉積製程之一或多者形成。
- 如請求項4至11任一項所述之方法,其中該第三碳層係使用電漿增強化學氣相沉積、電漿增強原子層沉積、及一混合式化學氣相沉積及原子層沉積製程之一或多者形成。
- 如請求項10至12任一項所述之方法,其中電漿增強化學氣相沉積、電漿增強原子層沉積、及一混合式化學氣相沉積及原子層沉積製程之一或多者包含提供氬或氦稀釋氣體以用於點燃及維持該電漿。
- 如請求項4至13任一項所述之方法,其中該等形成該第一碳層、形成該第二碳層、及形成該第三碳層之步驟的一或多者包含提供由式Cx Hy Nz 表示之一前驅物,其中x係大於或等於2之一自然數、y係一自然數、且z係零或一自然數。
- 如請求項4至14任一項所述之方法,其中該等形成該第一碳層、形成該第二碳層、及形成該第三碳層之步驟的一或多者包含提供一前驅物,該前驅物包含具有二或更多個碳原子及一或多個氫原子之一鏈狀或環狀分子。
- 如請求項4至15任一項所述之方法,其中在該等形成該第一碳層、形成該第二碳層、及形成該第三碳層之步驟的一或多者期間,該反應空間內的一溫度係小於100 °C。
- 如請求項4至16任一項所述之方法,其中該等形成該第一碳層、形成該第二碳層、及形成該第三碳層之步驟的一或多者包含一處理步驟。
- 如請求項17所述之方法,其中該處理步驟包含一電漿處理步驟。
- 如請求項18所述之方法,其中該電漿處理步驟包含使該第一碳層、該第二碳層、及該第三碳層的一或多者暴露至使用一直接電漿及一遠端電漿之一或多者形成的物種。
- 如請求項18所述之方法,其中該等物種係由氬、氦、氮、及氫之一或多者形成。
- 如請求項3至20任一項所述之方法,其中該等蝕刻該第一碳層的該部分及蝕刻該第二碳層的該部分之步驟的一或多者包含一電漿增強蝕刻製程。
- 如請求項21所述之方法,其中該等蝕刻該第一碳層的該部分及蝕刻該第二碳層的該部分之步驟的一或多者期間所用的一蝕刻劑包含供應氧、氫、氬、氦、氮之一或多者至該反應空間。
- 一種結構,其係如請求項1至22任一項所述之方法所形成。
- 一種系統,其係用於執行如請求項1至22任一項之步驟。
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2020
- 2020-11-11 KR KR1020200150290A patent/KR20210062561A/ko active Search and Examination
- 2020-11-17 US US16/950,899 patent/US11626316B2/en active Active
- 2020-11-17 TW TW109140061A patent/TW202136557A/zh unknown
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US11626316B2 (en) | 2023-04-11 |
US20210151348A1 (en) | 2021-05-20 |
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