JP2020528496A - 化学的堆積、処理および／または浸透装置およびその使用方法 - Google Patents

化学的堆積、処理および／または浸透装置およびその使用方法 Download PDF

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JP2020528496A
JP2020528496A JP2020502653A JP2020502653A JP2020528496A JP 2020528496 A JP2020528496 A JP 2020528496A JP 2020502653 A JP2020502653 A JP 2020502653A JP 2020502653 A JP2020502653 A JP 2020502653A JP 2020528496 A JP2020528496 A JP 2020528496A
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Abstract

本開示は、基材の表面上および／または表面における化学反応を提供するための化学的堆積、処理および／または浸透装置に関する。装置は、閉鎖可能な反応チャンバーを一緒に形成する上部および底部反応チャンバー部分と、反応チャンバーの内部へのアクセスを許容するように、上部および底部反応チャンバー部分を互いに対して閉位置から開位置まで移動させるために構成および配置されたアクチュエータとを有し得る。上部基材ホルダーは、少なくとも反応チャンバーが開位置にあるときに、基材を保持するために上部反応チャンバー部分に接続され、底部基材ホルダーは、反応チャンバーが閉位置にあるときに、基材を保持するために底部反応チャンバー部分に接続される。

Description

本開示は、概ね、電子デバイスを製造するための装置、および方法に関する。より具体的には、本開示は、こうした装置を使用した基材の表面上および／または表面における化学反応を提供するための化学処理、堆積および／または浸透装置および方法に関する。
トレンドが半導体デバイスをより小さいサイズへと推し進めるにしたがい、種々のパターニング技術が生まれてきた。これらの技術には、スペーサー法クオドパターニング（ｓｐａｃｅｒ ｄｅｆｉｎｅｄ ｑｕａｄｒｕｐｌｅ ｐａｔｔｅｒｎｉｎｇ）、極紫外線リソグラフィー（ＥＵＶ）、およびスペーサー法ダブルパターニング（Ｓｐａｃｅｒ Ｄｅｆｉｎｅｄ Ｄｏｕｂｌｅ ｐａｔｔｅｒｎｉｎｇ）と組合せたＥＵＶが含まれる。
更に、誘導自己組織化（ＤＳＡ）は、将来のリソグラフィー用途の選択肢と考えられている。ＤＳＡは、自己集合のためのパターンを画定するためにブロックコポリマーの使用を含む。使用されるブロックコポリマーは、ポリ（メチルメタクリレート）（ＰＭＭＡ）、ポリスチレン、またはポリ（スチレン−ブロック−メチルメタクリレート）（ＰＳ−ｂ−ＰＭＭＡ）を含み得る。他のブロックコポリマーは、潜在的に小さな寸法を可能にし得る新たな「高χ（ｈｉｇｈ−Ｃｈｉ）」ポリマーを含み得る。
上記のパターニング技術は、基材の高解像度パターニングを可能にするために、基材上に配置される、ＥＵＶポリマー、またはＤＳＡブロックコポリマーレジストのような浸透材料を利用することができる。高解像度およびラインエッジラフネスの両方の要求を満たすために、ポリマーレジストは通常薄い層であることができる。しかしながら、このような薄いポリマーレジスト層はいくつかの欠点を有することがある。特に、高解像度ポリマーレジストは、エッチング耐性が低くなり、高いラインエッジラフネスを被る場合がある。この低いエッチング抵抗および高いラインエッジラフネスは、正しいパターン付けの下にある層への転写をより困難にし得る。
従って、浸透材料、例えばパターン付き材料レジスト、を浸透させて、浸透材料の特性を変化させることが有利でありうる。パターン付き材料の浸透を実行するためには、前駆体への長い露出時間が必要である場合がある。
自己組織化単分子膜（ＳＡＭ）は、パターニングの支援にも使用され得る。有機分子の自己組織化単分子膜は、より多くのまたはより少ない規則領域への吸着および自己組織化によって表面上に自然に形成される分子集合体であり得る。自己組織化単分子膜はまた、ＳＡＭ分子に長い曝露時間を要する場合がある。
従って、基材の表面上および／または表面に化学反応を提供する最適化された化学的堆積、処理および／または浸透装置を有することが有利である。
本発明の少なくとも一つの実施形態によれば、基材の表面上および／または表面に化学反応を提供するための化学的処理、堆積および／または浸透装置が提供されており、装置は、
閉鎖可能な反応チャンバーを一緒になって形成する、上部および底部反応チャンバー部分と、
上部および底部反応チャンバー部分を、互いに対して少なくとも第一の方向に開位置から閉位置まで移動して、閉じた反応チャンバーを形成するように構成され、かつ配置されるアクチュエータと、
少なくとも反応チャンバーが開位置にあるときに、上部反応チャンバー部分に接続されて基材を保持する上部基材ホルダーと、
反応チャンバーが閉位置にあるときに、底部反応チャンバー部分に接続されて基材を保持する底部基材ホルダーと、を含む。
上部基材ホルダーが上部反応チャンバー部分に接続され、底部基材ホルダーが底部反応チャンバー部分に接続された状態で、上部および底部反応チャンバー部分を互いに対して少なくとも第一の方向に移動させることによって反応チャンバーを閉じることで、基材を上部基材ホルダーから底部基材ホルダーへと移動させることができる。上部および底部基材ホルダーをそれぞれ上部および底部反応チャンバー部分に接続することにより、また両方の反応チャンバー部分が互いに対して移動可能であることにより、基材移動のための反応チャンバー内または反応チャンバー壁を通るフィードスルー内の部分を動かすことのない、簡略化された設計が可能になる。こうした簡略化された設計は、反応チャンバーの漏れがより少ない場合があり、従ってより効率の高い前駆体となり得る。
本発明の少なくとも一つの実施形態によれば、閉鎖可能な反応チャンバーを一緒になって形成する上部および底部反応チャンバー部分を備える装置で、基材の表面上および／または表面における化学的堆積および／または浸透反応を提供するための方法が提供されており、方法は、
上部および底部反応チャンバー部分を、互いに対して閉位置から開位置まで第一の方向に移動させることと、
上部反応チャンバー部分に接続された上部基材ホルダーの上の第一の方向に実質的に垂直な第二の方向に基材を移動させることと、
基材を第一の方向に上部基材ホルダー上に移動させることと、
上部および底部反応チャンバー部分を、互いに対して第一の方向に開位置から閉位置まで移動し、それによって底部基材ホルダーが基材を上部基材ホルダーから受けることと、
基材の表面上の化学反応のために、少なくとも第一の前駆体を前駆体分配システムに提供することと、を含む。
先行技術を超えて達成される本発明および利点を要約する目的で、本発明のある特定の目的および利点が本明細書において上記に説明される。当然のことながら、必ずしもこうした目的または利点のすべてが本発明の任意の特定の実施形態によって達成されなくてもよいことが理解されるべきである。それ故に、例えば本明細書に教授または示唆する通り、一つの利点または一群の利点を達成または最適化する様態で、本明細書で教授または示唆されうる通りの他の目的または利点を必ずしも達成することなく、本発明が具体化または実行されてもよいことを当業者は認識するであろう。
これらの実施形態のすべては、本明細書に開示する本発明の範囲内であることが意図される。当業者には、これらのおよび他の実施形態は、添付の図面を参照して、以下のある特定の実施形態の発明を実施するための形態から容易に明らかとなり、本発明は、開示されるいかなる特定の実施形態にも限定されない。
当然のことながら、図内の要素は、単純化および明瞭化のために例示されており、必ずしも実寸に比例して描かれていない。例えば、図内の要素のうちの幾つかの寸法は、本開示の例示された実施形態の理解の向上を助けるために他の要素に対して相対的に誇張されている場合がある。
一実施形態による化学的堆積および／または浸透装置の反応チャンバーの側面図を示す。 図１の反応チャンバーを使用する基材ロードシーケンスを示す。 図１の反応チャンバーを使用する基材ロードシーケンスを示す。 図１の反応チャンバーを使用する基材ロードシーケンスを示す。 図１の反応チャンバーを使用する基材ロードシーケンスを示す。 図１の反応チャンバーを使用する基材ロードシーケンスを示す。 図１の反応チャンバーに使用可能な上部反応チャンバー部分を部分的に示す。 図１の反応チャンバーに使用可能な上部反応チャンバー部分を部分的に示す。 図１の反応チャンバーに使用可能な上部反応チャンバー部分を部分的に示す。 図１の反応チャンバーに使用可能な上部反応チャンバー部分を部分的に示す。 図１の反応チャンバーで使用可能な底部基材ホルダーを示す。 図１〜４に関連して説明した反応チャンバーを実装するための化学的堆積および／または浸透装置の上面図を示す。
ある特定の実施形態および実施例を以下に開示するものの、本発明が、具体的に開示される本発明の実施形態および／または使用、ならびにその明白な修正および均等物を超えて拡大することは、当業者によって理解されるであろう。それ故に、開示される本発明の範囲は、以下に説明される特定の開示された実施形態によって限定されるべきではないことが意図される。
図１は、すべての異なる部分が見えるように分解されている、一実施形態による化学的堆積および／または浸透装置の反応チャンバー１の側面図を示す。装置は、上部および底部反応チャンバー部分３、５を備え、適切な材料、例えば（ステンレス）鋼、チタン、アルミニウムまたは石英で作製された閉鎖可能な反応チャンバー１を共に形成する。Ｏリング１２は、上部反応チャンバー部分３と底部反応チャンバー部分５との間に提供されて、上部反応チャンバー部分３および底部反応チャンバー部分５が相互に移動するときに反応チャンバー１をシールすることができる。下部セクション２は、Ｏリング（図示せず）に結合され得るリッド４と共に、上部反応チャンバー部分３を形成し得る。上部基材ホルダー１１は、少なくとも反応チャンバー１が開位置にあるときに、上部反応チャンバー部分３に提供されて基材を保持し得る。
上部反応チャンバー部分３は、反応チャンバーに前駆体を提供するための前駆体分配システムに接続されてもよい。前駆体分配システムは、反応チャンバーに前駆体を提供するための第一および第二の前駆体送達口６、８を備えてもよい。上部反応チャンバーには、例えば、ポンプ（図示せず）を用いて、反応チャンバーから前駆体を除去する出口１０を備える除去システムを備えていてもよい。
底部基材ホルダー１３は、反応チャンバー１が閉位置にあるときに、底部反応チャンバー部分５に提供されて基材を保持し得る。底部基材ホルダー１３には、窪み１４を備えていてもよい。上部基材ホルダー１１は、上部反応チャンバー部分３、および底部反応チャンバー部分５が互いに向かって移動して、基材のロードシーケンスの間、反応チャンバー１を形成するとき、窪み１４内に部分的に移動し得る。
図２ａ〜図２ｅは、図１の反応チャンバーを使用する基材ロードシーケンスを示す。図２ａは、上部反応チャンバーの下部セクション２および底部反応チャンバー部分５の側面図を示す。アクチュエータ７は、閉じた反応チャンバーを形成するために、開位置から閉位置へ、またはその逆の閉位置から開位置へと、底部反応チャンバー部分５を下部セクション２に対して少なくとも第一の方向Ｚに移動させるために使用されてもよい。アクチュエータ７は、シリンダー９内に移動可能に取り付けられるピストン１６を備えてもよい。
上部基材ホルダー１１は、少なくとも反応チャンバー１が開位置にあるときに、上部反応チャンバー部分３に提供されて基材を保持し得る。少なくとも二つの上部基材ホルダー１１は、上部基材ホルダー１１によって保持される基材の中心に対して、互いに実質的に反対の二つの位置で、上部反応チャンバー部分の下部セクション２に接続され得ることが好ましい。上部基材ホルダー１１は、基材を支持するための支持領域２３を備えるクランプ１９と、上部反応チャンバー部分の下部セクション２からクランプ１９を吊るすためのサスペンション２１とを有し得る。支持領域２３は、基材１５を保持するための吸引または静電クランプ手段を備えていてもよい。支持領域１９は実質的に水平であってもよく、サスペンション２１は実質的に垂直であってもよい。支持領域２３は受動的であってもよく、基材は重力によって位置付けられてもよい。
基材１５を保持するエンドエフェクター１７が図２ａに示される基材ハンドラーは、反応チャンバーが開位置にあるときに、基材を第一の方向Ｚに実質的に垂直な第二の方向Ｘに移動させて、上部基材ホルダー１１の上に位置するように構成および配置してもよい。
図２ｂは、反応チャンバーが開位置にあるときに、上部に基材１５を保持するエンドエフェクター１７を備える基材ハンドラーを、上部基材ホルダー１１の支持領域２３の上に基材を移動させた図２ａの拡大側面図を示す。基材ハンドラーは、反応チャンバーが開位置にあるときに、上部基材ホルダー１１の上の位置から上部基材ホルダー上の位置まで、基材１５を第一の方向Ｚに移動させてもよい。支持領域２３は、支持領域２３上の基材１５をクランプするための吸引または静電クランプ手段を備えていてもよく、または重力によって受動的に静止していてもよい。
図２ｃは、基材ハンドラーのエンドエフェクター１７が、エンドエフェクター１７の吸引または静電力を解放することによって、基材１５を解放し得る、図２ｂの構成を下から見た図を示す。その後、エンドエフェクターは上部基材ホルダー１１から離れるように移動し、一方で基材１５は上部基材ホルダー１１の支持領域２３上に残る。
図２ｄは、基材ハンドラーのエンドエフェクター１７が、開いた反応チャンバーから第二の方向Ｘで離れ得る、図２ｃの構成の図を示す。基材１５は、上部基材ホルダー１１の支持領域２３上に残っていてもよい。
図２ｅは、基材ハンドラー１７が反応チャンバー空間から離れ、反応チャンバー１が、アクチュエータ７によって少なくとも第一の方向に底部反応チャンバー部分５を上部反応チャンバー部分の下部セクション２に向かって移動させることによって閉じられたときの反応チャンバー１の側面図を示す。反応チャンバー部分３、５およびそれらのそれぞれの基材ホルダー１１、１３は、移動により基材が上部基材ホルダー１１から底部基材ホルダー１３に移されるように、構成および配置される（図１参照）。上部基材ホルダー１１は、上部反応チャンバー部分３、および底部反応チャンバー部分５が互いに向かって移動して、反応チャンバー１を形成するとき、窪み１４内に部分的に移動し得る。
上部基材ホルダー１１が上部反応チャンバー部分３に接続され、底部基材ホルダー１３が底部反応チャンバー部分５に接続された状態で、上部および底部反応チャンバー部分を互いに対して少なくとも第一の方向Ｚに移動させることによって反応チャンバー１を閉じることで、基材を上部基材ホルダー１１から底部基材ホルダー１３へと移動させることができる。上部および底部基材ホルダー１１、１３をそれぞれ上部および底部反応チャンバー部分３、５に接続することにより、また両方の反応チャンバー部分が互いに対して移動可能であることにより、反応チャンバー１内または反応チャンバー壁を通るフィードスルー内の部分を動かすことのない簡略化された設計が可能になる。
こうした設計は、反応チャンバー１の漏れがより少ない場合があり、従ってより効率の高い前駆体となり得る。後者は、前駆体への曝露時間が長いほど、浸透、処理および／または堆積プロセスにとって特に重要である。
例えば、反応チャンバー内の圧力が反応チャンバー１外の圧力と異なる場合、ガス供給／排出なしで、３０秒よりも長く、好ましくは１分よりも長く、より好ましくは２分よりも長く、さらにより好ましくは５分よりも長く、最も好ましくは１０分よりも長く、元の圧力差から５０〜１００％、好ましくは７５〜１００％、より好ましくは９０〜１００％、さらにより好ましくは９５〜１００％、最も好ましくは９８〜１００％の間で、圧力差を保持し得る。
反応チャンバー１は、約１０〜３ｍｂａｒ＊ｌ／ｓ未満、好ましくは約１０〜５ｍｂａｒ＊ｌ／ｓ未満、より好ましくは約１０〜６ｍｂａｒ＊ｌ／ｓ未満、さらにより好ましくは約１０〜７ｍｂａｒ＊ｌ／ｓ未満、最も好ましくは約１０−８ｍｂａｒ＊ｌ／ｓ未満のＨｅ漏れ速度を有し得る。
上部反応チャンバー部分３は固定であってもよく、一方で底部反応チャンバー部分５は、アクチュエータ７により第一の方向Ｚに上下に移動可能であってもよい。この構成では、反応チャンバーに前駆体を提供する前駆体分配システムおよび反応チャンバーから前駆体を除去するための除去システムは、チューブが上部反応チャンバー部分３の移動に柔軟性を提供する必要がないため、上部反応チャンバー部分に剛性チューブで動作可能に接続することができる。前駆体分配システムおよび／または除去システムは、反応チャンバーのパージを提供するためにパージシステムを用いてもよい。
図３ａは、上部基材ホルダー１１が、上部反応チャンバー部分３の下部セクション２から底部反応チャンバー部分５の方向に突出する、上部反応チャンバー部分３の下部セクション２を示す。下部セクション２は、その間のＯリングに結合され得るリッド（図示せず）と共に、上部反応チャンバー部分３の一部である。
図３ｂは、上部から第一の方向に見られるＵ字形状に構成および配置された二つの上部基材ホルダー１１を示す。Ｕの開放端は、上部基材ホルダー上に位置付けられたときに、基材の中心方向に装置内に構成され得る。二つの上部基材ホルダーは、支持領域２３（図３ｃを参照）をＵの上部に有するように構成および配置され得る一方で、サスペンション２１はＵの底部に取り付けられてもよい。Ｕの底部は、上部基材ホルダー上に位置付けられる基材の円形状に実質的に沿う場合がある。このように、上部基材ホルダー１１の四つの支持領域２３は、基材を支持し得る。支持領域２３は、５０ｍｍ未満、好ましくは約３０ｍｍの長さ、および３０ｍｍ未満、好ましくは約２０ｍｍの幅であってもよい。
図３ｃは、第一の方向に対して垂直であり、基材ハンドラーが基材を上部基材ホルダー１１の間で移動させる方向に平行である、第二の方向に見られるＬ字形状を有するように構成および配置された、二つの上部基材ホルダー１１を示す。Ｌの下端は、第一および第二の方向に対して垂直な方向を指すように装置内で構成され得る。二つの上部基材ホルダー１１は、Ｌの下端にクランプ１９を有するよう構成および配置され得る一方で、サスペンション２１はＬの上部にあり得る。サスペンション２１の高さは、基材ハンドラーが上部基材ホルダー１１のクランプ１９の上に基材を移動させるための空間を画定する。サスペンション２１の高さは、２０ｍｍ未満、好ましくは１０ｍｍ未満、例えば６ｍｍ未満であり得る。クランプ１９の高さは、上部基材ホルダー１１内に十分な強度を提供するために１０ｍｍ未満、好ましくは約６ｍｍであり得る。
図３ｄは、第一および第二の方向と垂直な方向に見られる上下逆向きＴ字形状を有するように構成および配置された、二つの上部基材ホルダー１１を示す。二つの上部基材ホルダーは、クランプ１９をＴの上端に有する一方で、サスペンション２１がＴの下端にあり得るように構成および配置され得る。
図４は、その上部平坦な表面２９に窪み１４を備えた底部基材ホルダー１３を示す。上部基材ホルダー１１（図２）のクランプ１９は、上部反応チャンバー部分３、および底部反応チャンバー部分５が第一の方向に移動して、反応チャンバーを形成するとき、窪み１４内に移動し得る。窪み１４へのクランプ１９の移動により、基材は上部基材ホルダー１１から底部基材ホルダー１３へと移動される。窪みは、クランプの厚さより少し大きな、例えば、２ｃｍ未満、好ましくは１ｃｍ未満、最も好ましくは７ｍｍ未満だが、０．５ｍｍ超、好ましくは１ｍｍ超、より好ましくは３ｍｍ超の深さを有し得る。
基材と反応チャンバー１の上部の間の空間は、５ｃｍ未満、好ましくは３ｃｍ未満、より好ましくは２ｃｍ未満、さらにより好ましくは１センチメートル未満、さらにより好ましくは５ｍｍ未満、最も好ましくは３ｍｍ未満だが、０．５ｍｍ超、好ましくは１ｍｍ超であり得る。このようにして、反応チャンバーの容積を最小化することができ、前駆体の消費に有利である。３００ｍｍ直径を有する基材の反応チャンバー１の容積は、約２０リットル未満、好ましくは約１０リットル未満、約５リットル未満、約２リットル未満、約１リットル未満だが０．１リットル超、好ましくは０．５リットル超であり得る。
底部基材ホルダー１３の平坦な表面２９は、上部基材ホルダーが窪み１４内に移動するときに基材を受けるためである。底部基材ホルダー１３は、平坦な表面２９上に基材を保持する吸引または静電クランプ手段を備えてもよく、または基材は受動的に配置されてもよい。底部基材ホルダーは、平坦な表面２９を介して基材を加熱するためのヒーターを備えていてもよい。均一な加熱を提供するために、平坦な表面は基材と同じサイズを有することができ、また窪みは小さくされるべきである。有利なことに、上部基材ホルダー１１と窪み１４の縁部との間の距離は、数ミリメートルほどに非常に小さくなり得る。下部セクション２およびリッドを備える上部反応チャンバー部分も、反応チャンバーを加熱するためのヒーターを備えていてもよい。
基材は、反応チャンバーが閉じたときに底部基材ホルダー１３によって完全に支持されてもよく、または別の方法として、基材の一部はまだ上部基材ホルダーによって部分的に支持されてもよい。後者の場合、上部保持ホルダーの支持領域は、基材の均一な加熱を改善するためのヒーターを備え得る。
装置は「ピンレス」であり、基材ハンドラーから基材を受け取るため、および底部基材ホルダー上の基材を下げるためのリフトピンがないことを意味する。リフトピンは、その動きのために反応チャンバーを通る穴を必要とするが、これが漏れを起こす可能性があるため、不利である。装置は、反応チャンバーの外側環境への穴を有さない場合があるため、反応チャンバー１内の圧力を保持することはより簡単であり得る。リフトピンは、移動可能な部分の粘着などの問題も引き起こす可能性があり、これは「ピンレス」設計で回避することができる。
いくつかの実施形態では、閉鎖可能な反応チャンバー１を一緒に形成する上部反応チャンバー部分および底部反応チャンバー部分は、ガスが反応チャンバー部分を通過することを可能にし、その後の製造プロセスで閉じることができる機械加工構造（例えば、穴）を有していない。これにより、漏れのリスクが低減され、例えば、コールドスポットを回避することによって、加熱の均一性がより良くなる。
図５は、一実施形態による化学的堆積および／または浸透装置の上面図を示す。図５による装置は、図１〜図４と併せて説明した通り、反応チャンバーを使用し得る。
カセットを充填するためのカセットローディングステーション３１（例えば、フロントオープニングユニファイドポッド「ＦＯＵＰ」）が複数の基材とともに示される。前部基材ハンドラー３３は、カセットから中間ローディングステーションへ基材を移動させるために使用され得る。中間ローディングステーションは、ロードロック３５であってもよい。その後、基材ハンドラー３７は、基材１５を中間ローディングステーションから上部および底部基材ホルダーを備えた反応チャンバー１に移動させるために使用される。
すべての反応チャンバー１は、その時点で単一の基材１５に対して基材ハンドラー３７によってアクセス可能であってもよい。四つの基材を四つの反応チャンバーで同時に処理することができる。基材ハンドラー３７は、Ｚ方向で移動可能であってもよく、図２ｂ〜２ｄに示されるエンドエフェクター１７を有して、基材を上部基材ホルダー１１上に保持して落とすことができる。
装置は、前駆体分配および除去システム４３を制御するための逐次制御器３９を備えてもよく、装置が堆積および／または浸透を実行できるようにプログラムされたメモリ４１を備えてもよい。メモリ内のプログラムは、装置を制御して少なくとも第一のサイクルで堆積および／または浸透させることができ、第一のサイクルは、
反応チャンバー１に前駆体を提供するために、第一の前駆体送達口２２（図１参照）を介して第一の期間に前駆体分配システムによって、反応チャンバー内に第一の前駆体を提供することと、
反応チャンバーから前駆体を除去するための出口２６を介して、除去システムによって少なくとも第二の期間に、基材から第一の前駆体の一部を除去することと、
反応チャンバーに前駆体を提供するために、第二の前駆体送達口２４を介して反応チャンバー内に第三の期間、第二の前駆体を提供するための前駆体分配システムを起動することにより、反応チャンバー内に第二の前駆体を提供することと、を含む。
逐次制御器３９は、反応チャンバーに第一の前駆体を提供した後に、前駆体分配および除去システム４３が浸漬期間中に不活性化される間、反応チャンバー内に第一または第二の前駆体を残すようにプログラムされ得る。このようにして、第一の前駆体が反応チャンバー内で吸収、反応、および／または浸透し、静止している間に、第一の前駆体または第二の前駆体の使用はない。
基材ハンドラー３７は、空気が除去システムで除去されるチャンバー内に位置付けられてもよく、基材ハンドラー３７はロードロック３５から基材を受け取ってもよい。基材はロードロック内に位置付けられてもよい。ロードロック内の空気は除去されてもよく、基材ハンドラー３７へのドアが開いてもよく、基材ハンドラーが基材をロードロックから反応チャンバー１に移動させてもよい。このように装置を操作することで、反応チャンバー１の内部を制御して非常に清潔にすることが可能になる。
前駆体分配システムは、第一および第二の前駆体入口２２、２４を介して、第一または第二の前駆体を反応チャンバー１に提供しうる（図１参照）。第一の前駆体は、第一の前駆体ヒーターによって容器に含まれる液体または固体を蒸発させて、チャンバーの中へ気体として導入されることができ、チャンバーへの送達に適切な蒸気圧を提供することができる。第一の前駆体ヒーターは、容器内の第一の前駆体に熱を提供しうる。同様に、第二の前駆体は、反応チャンバーへの送達に適切な蒸気圧を提供するために、第二の前駆体ヒーターによって容器に含まれる液体または固体を蒸発させて、気体としてチャンバーの中へと導入され得る。
前駆体分配および除去システム４３は、パージガスをパージバルブを介して反応チャンバーに供給するパージシステムを備えてもよい。パージガスは、窒素またはヘリウムなどの不活性ガスであってもよく、反応チャンバーをパージするために使用されてもよい。
前駆体は、基材上に形成される浸透材料または堆積層の要素を有する化合物であってもよい。前駆体は、例えば、選択的堆積における表面のパッシベーションに使用されうる自己組織化単分子膜（ＳＡＭ）であってもよく、従ってパターニングを支援する可能性がある。
反応器１の温度は、ＳＡＭの堆積中に５０〜２５０℃、より好ましくは１００〜２００℃、最も好ましくは１３０〜１７０℃であり得る。反応器１の圧力は、ＳＡＭの堆積中に０．０１〜１０Ｔｏｒｒ、好ましくは０．０５〜２Ｔｏｒｒ、最も好ましくは０．１〜１Ｔｏｒｒであり得る。反応期間は１〜６０分であってもよく、５〜３０分であることが好ましく、８〜１５分であることが最も好ましい。
第一の前駆体は、第一の前駆体バルブおよび第一の前駆体入口を介して反応チャンバーに提供されてもよい。前駆体は容器に貯蔵されてもよく、必要に応じてその他の適切な前駆体貯蔵手段と置き換えられてもよい。例えば、前駆体のうちの一つが固体であってもよい場合、固体前駆体の昇華を加速するために特別に適合された容器が提供されてもよい。容器のうちの一つは、加熱が必要ないように気体前駆体を備えていてもよい。
逐次制御器３９、例えば、マイクロ制御器は、一つまたは複数の前駆体バルブおよびパージバルブならびに除去システムに動作可能に接続されてもよい。逐次制御器３９は、装置に、反応チャンバー内の基材上に提供された浸透材料の第一および第二の前駆体との浸透を実行させるようにプログラムされたプログラムを保存するためのメモリ４１を備え得る。圧力センサーおよび／または温度センサーは、チャンバーの圧力および温度を監視してもよく、浸透のプロセス条件を最適化するために、動作中に逐次制御器と動作可能に接続されてもよい。
逐次制御器３９のメモリ４１に保存されたプログラムは、第一および第二の前駆体を、反応チャンバーに提供し、および反応チャンバーから除去するのに適切な時点で、バルブの開閉を配列するようにプログラムされてもよい。前駆体バルブは加熱され得る。
装置は、例えば加熱抵抗ワイヤーなどの第一の発熱体および温度センサーに動作可能に接続された加熱制御器を備える加熱システムを備えてもよい。圧力センサーも同様に提供されてもよい。加熱制御器は、逐次制御器３９に動作可能に接続されてもよい。温度センサーを使用して、反応チャンバー内の温度を測定し、発熱体の温度を調節して反応チャンバーの温度を調節するために、この温度についてのフィードバックを加熱制御器に提供することができる。
例えば、第一または第二の前駆体がトリメチルアルミニウム（ＴＭＡ）である場合、蒸気圧は次のようになる：
２０℃ 約９ Ｔｏｒｒ
４０℃ 約２５ Ｔｏｒｒ
６０℃ 約６４ Ｔｏｒｒ
８０℃ 約１４９ Ｔｏｒｒ
１００℃ 約３１３ Ｔｏｒｒ
１２８℃ 約７６０ Ｔｏｒｒ
これらの値から分かるように、加工圧力は、反応チャンバー内の温度を上昇させることによって実質的に上昇させることができる。しかしながら、前駆体と接触する装置に小さな部分があり、かつそれがわずかに低い温度を有する場合、望ましくない前駆体の凝縮の直接的なリスクがある。
例えば浸透材料または基材を有するＴＭＡなどの前駆体の相互作用は、主に吸着および拡散を通してもよい。吸着および拡散の速度、ならびに吸着反応における平衡は、温度変化によって影響を受けうるため、温度は浸透に対して顕著な効果を持ちうる。
浸透プロセスは、９０℃で最適であってもよく、１２０℃および１５０℃では、浸透はＴＭＡに対してより良好ではない。これは、吸着ベースのプロセスに対して期待されうる。より高い温度では、吸着反応の平衡は、別々のＴＭＡおよびポリマー種に向かつて移動しうる。２０〜４００、好ましくは５０〜１５０、より好ましくは６０〜１１０、最も好ましくは６５〜９５℃の加工温度が、したがって好ましい。
加熱システムは、したがって、反応チャンバーおよび反応チャンバーからのダクトの温度を、少なくともそれらのそれぞれの反応チャンバーバルブまで、２０〜４５０℃に、好ましくは５０〜１５０℃、より好ましくは６０〜１１０℃、最も好ましくは６５〜９５℃に制御するように構成され、かつ配置され得る。逐次制御器３９内のメモリ４１は、装置が、浸透中、凝縮を回避するため、反応チャンバーの第一および第二の前駆体の圧力を、０．００１〜１０００Ｔｏｒｒ、好ましくは０．１〜４００Ｔｏｒｒ、より好ましくは１〜１００Ｔｏｒｒ、および最も好ましくは２〜５０Ｔｏｒｒに到達させおよび／またはそれを維持するプログラムによってプログラムされ得る。このようにして、前駆体ＴＭＡの使用に関して最適なプロセス温度および圧力を持つ一方で、装置内の凝縮を回避するために十分な安全マージンを作り出す。
装置は、液体流量制御器および気化器を含む直接液体インジェクタ（ＤＬＩ）を備えうる。液体流量制御器は、気化器への液体の流れを制御して、第一または第二の前駆体を蒸発させ得る。流量制御器と気化器との間の液体の流れを加熱する必要性がない場合がある。気化器は、第一または第二の前駆体を蒸発させるために加熱されてもよい。加熱システムは、凝縮を回避するために、反応チャンバー内の第一または第二の前駆体の圧力において、反応チャンバーから気化器まで、温度を少なくとも第一または第二の前駆体の沸騰温度まで制御するよう構成および配置されてもよい。気化器は、反応チャンバー内で構成および配置されて、反応チャンバー内に蒸発した前駆体を直接提供してもよい。気化器はまた、装置の前駆体分配および除去システム内に構成および配置されてもよい。
加熱システム、例えば、発熱体は、装置の関連部分の周りに巻かれているか、または底部基材ホルダーに提供されている抵抗器ワイヤーであってもよい。発熱体は、複数の温度センサーを有するマルチゾーン発熱体であり、ツールのあらゆる部分の温度をより正確に制御してもよい。
前駆体分配および除去システムは、前駆体を提供するためのバブラーを備えうる。バブラーは、０．１〜２００の第一の前駆体のパルスを有する不連続な前駆体流を提供し得、好ましくは１〜３秒間と混合ガスのパルスを０．０１〜２、好ましくは０．３〜１秒間とを交互に行う。
前駆体分配および除去システムは、直接液体インジェクタ（ＤＬＩ）気化器を備え、反応チャンバー内、または前駆体分配およびシステムのその他のダクト内に、気体状の前駆体を直接注入してもよい。
典型的な浸透動作中に、第一の前駆体は、容器からの気相で第一の前駆体への暴露によって、基材上の浸透材料内に浸透し得る。第一の前駆体は、基材上の浸透材料と反応して、基材上の浸透材料中に浸透された化学吸着性または物理吸着性の誘導体となり得る。その後、第二の前駆体は、容器からの気相で第二の前駆体への暴露によって、基材上の浸透材料内に浸透し得る。第二の前駆体は、基材上の浸透材料中に浸透された第一の前駆体の化学吸着性または物理吸着性の誘導体と反応して、最終浸透材料となり得る。
第一または第二の前駆体を貯蔵するための容器は、トリメチルアルミニウム（ＴＭＡ）、トリエチルアルミニウム（ＴＥＡ）、およびジメチルアルミニウムハイドライド（ＤＭＡＨ）からなる群から選択されるアルミニウムのアルキル化合物を貯蔵するよう構成および配置され得る。容器は、塩化チタン（ＩＶ）（ＴｉＣｌ）、タンタル（Ｖ）ペンタクロリド（ＴａＣｌ５）、および／または五塩化ニオブ（ＮｂＣｌ５）などの第一または第二の前駆体を貯蔵するように構成および配置され得る。
ジルコニウムまたはハフニウムの浸透については、容器は、ＺｒまたはＨｆ前駆体を貯蔵するよう構成され、配置されうる。ＺｒまたはＨｆ前駆体は、有機金属の（ｍｅｔａｌｏｒｇａｎｉｃ）前駆体、有機金属の（ｏｒｇａｎｏｍｅｔａｌｌｉｃ）前駆体、またはハライド前駆体を含んでいてもよい。いくつかの実施形態では、前駆体はハライドである。いくつかの他の実施形態では、前駆体はＨｆまたはＺｒのアルキルアミン化合物、例えばＴＥＭＡＺまたはＴＥＭＡＨである。
容器は、水、オゾン、過酸化水素、アンモニア、およびヒドラジンからなる群から選択される酸化剤などの第一または第二の前駆体を貯蔵するように構成および配置され得る。
装置は、トリメチルアルミニウム（ＴＭＡ）、トリエチルアルミニウム（ＴＥＡ）、ジメチルアルミニウムハイドライド（ＤＭＡＨ）、ジメチルエチルアミンアラン（ＤＭＥＡＡ）、トリメチルアミンアラン（ＴＥＡＡ）、Ｎ−メチルピロリジンアラン（ＭＰＡ）、トリイソブチルアルミニウム（ＴＩＢＡ）、トリｔｅｒｔブチルアルミニウム（ＴＴＢＡ）、トリメチルホウ素、およびトリエチルホウ素からなる群から好ましくは選択される、アルミニウムまたはホウ素炭化水素化合物などの第一または第二の前駆体を含むための第一の容器、および、チタン（ＩＶ）塩化物（ＴｉＣｌ）、タンタル（Ｖ）塩化物（ＴａＣｌ５）、および五塩化ニオブ（ＮｂＣｌ５）からなる群から好ましくは選択される金属ハロゲン化物などの、第一および第二の前駆体の他方を含むための第二の容器を備えていてもよい。後者は、金属炭化物材料の浸透に好ましい場合がある。
浸透材料は多孔性であってもよい。空隙率は、浸透材料の空隙を浸透材料の総容積との比として測定することによって測定されてもよく、また０と１の間の値を有してもよい。浸透材料は、全体積に対する空隙の比が０．１より大きい、０．２より大きい、または０．３よりも大きい場合に、多孔性として認定されうる。
一実施形態では、浸透材料は、パターン付き（フォト）レジスト層などのパターン付き層であってもよい。レジスト層はアニールされてもよい。アニールの工程は、レジストから水分または他の汚染物質を脱気する、レジストを硬化させる、レジストの部分を基材表面から選択的に焼失させる、または必要な空隙率を作成する目的を有してもよい。
一実施形態では、パターン付き層は、ブロックコポリマーフィルムを有し、ブロックコポリマーフィルムの誘導自己組織化を促進してパターン付き層を形成することによって提供されうる。こうしたパターン付き層の浸透は、こうしたパターン付き層の品質を改善しうる。ブロックコポリマーフィルムは、例えば、低いエッチング耐性を有し、コポリマーにパターンを浸透させることによって、パターンのエッチング耐性が改善され得る。
一実施形態では、パターン付き層は、リソグラフィー装置で露出されるフォトレジストを有することによって提供されうる。こうしたパターン付き層の浸透は、こうしたパターン付き層の品質を改善しうる。パターン付きフォトレジスト層は、例えば、低いエッチング耐性を有し、パターン付きフォトレジストを浸透させることによって、パターンのエッチング耐性が改善され得る。
基材が図１の反応チャンバー内に位置付けられた後、反応チャンバーおよび基材は、除去ポンプによって反応チャンバーから排除され得る。任意で、パージガスは、パージバルブを介して反応チャンバーを洗浄するためにパージシステムを備えてもよい。反応チャンバーは、脱ガス強化のために加熱されてもよい。
メモリ４１のプログラムは、浸透が開始される前に、反応チャンバーから気体を除去するための前駆体分配および除去システム４３を起動するようにプログラムされ、パージシステムによりパージガスを提供して反応チャンバーを１〜４０００秒間、好ましくは１００〜２０００秒パージするようにプログラムされてもよい。メモリのプログラムは、汚染物質の気体放出を強化するために、反応チャンバーを２０〜４５０℃、好ましくは５０〜１５０℃、最も好ましくは７０〜１００℃の温度に加熱するようにヒーターシステムを起動するようにプログラムされてもよい。
その後、方法は、一つまたは複数の浸透サイクル中に、浸透材料が浸透材料で浸透され得る浸透方法を含む。各浸透サイクルは、以下の工程を含みうる。
第一の期間、反応チャンバー内の基材に第一の前駆体を提供すること。逐次制御器３９のメモリ４１は、逐次制御器３９のプロセッサ上で実行されたときに、装置がパージバルブを閉じ、入口２２を介して第一の前駆体を反応チャンバー１に送達するプログラムを備えていてもよい。
これは、洗浄期間ＦＰに、反応チャンバー１を第一の前駆体で洗浄するように、出口２６を開くことで、および除去ポンプを起動することで行われてもよい。洗浄期間ＦＰも省略することができる。メモリ４１内のプログラムは、１〜６０秒の間の、好ましくは２〜３０秒の間の洗浄期間ＦＰの間、第一の前駆体流制御器を起動するようプログラムされてもよい。
第一の前駆体も、ロード期間ＬＰの間、除去システムでいずれの前駆体も除去しないまま、前駆体分配および除去システム４３を用いて反応チャンバー１に提供されてもよい。これにより、反応チャンバー１内の第一の前駆体の圧力蓄積が生じる。この蓄積は、反応チャンバー１内の第一または第二の前駆体の圧力が最大の所望圧に達するとき、逐次制御器３９によって終了され得る。別の方法として、反応チャンバーの圧力が所定の所望の加工圧力よりも上に増加したときに開かれる、圧力放出バルブがあってもよいが、それはロード期間ＬＰを終了することもあり得る。メモリ４１内のプログラムは、１〜３０００秒、好ましくは３〜１０００秒、より好ましくは５〜５００秒のロード期間ＬＰの間、第一の前駆体流制御器を起動するようプログラムされてもよい。
第一の前駆体は、前駆体分配および除去システム４３に浸漬期間ＳＰの間、いかなる前駆体の提供も除去もさせない一方で、反応チャンバー１内で静止している状態を維持されてもよい。メモリ４１のプログラムは、１０〜９０００秒、好ましくは５０〜５０００秒、より好ましくは１００〜１０００秒の浸漬期間ＳＰの間、第一の前駆体流制御器を起動するようプログラムされてもよい。
従って、第一の期間Ｔ１は、洗浄期間ＦＰ、ロード期間ＬＰ、および／または浸漬期間ＳＰを含み得る。全期間Ｔ１の間、第一の前駆体は浸透および／または吸収し得る。逐次制御器３９のメモリ４１は、逐次制御器のプロセッサ上で実行されるときにプログラムでプログラムされてもよく、これにより反応チャンバーで、第一の期間Ｔ１の間１〜２００００秒、好ましくは２０〜６０００秒、より好ましくは５０〜４０００秒、最も好ましくは１００〜２０００秒、第一の前駆体が装置に提供および維持される。
第一の前駆体の一部を第二の期間Ｔ２の間、除去することができる。逐次制御器３９は、除去システムを制御して、第一の前駆体を出口２６を介して反応チャンバー１から除去し得る。さらに、パージガスをパージシステムに提供して、反応チャンバー１を洗浄してもよい。
逐次流量制御器３９のメモリ４１のプログラムは、逐次制御器３９のプロセッサ上で実行されたときにプログラムでプログラムされてもよく、これにより装置は第一の前駆体の部分を除去する第二の期間Ｔ２を制御する。メモリ４１のプログラムは、０．１〜２０秒、好ましくは０．５〜１０秒の第二の期間Ｔ２でプログラムされてもよい。
逐次制御器３９が前駆体分配および除去システム４３を起動して、反応チャンバーに第三の期間Ｔ３の間、第二の前駆体を提供および維持することにより、第二の前駆体が反応チャンバー１に提供され得る。逐次制御器３９のメモリ４１は、第二の前駆体を反応チャンバー１に送達するようにプログラムされてもよい。
洗浄期間ＦＰ、ロード期間ＬＰ、および浸漬期間ＳＰを第一の前駆体と共に説明してきた。逐次制御器３９のメモリ４１は、逐次制御器３９のプロセッサ上で実行されたときに、装置が、洗浄期間ＦＰ、ロード期間ＬＰ、および／または第二の前駆体の浸漬期間ＳＰで第三の期間Ｔ３を実行するプログラムを備えてもよい。第三の期間Ｔ３全体の間、第二の前駆体は、吸収した第一の前駆体誘導体と反応し得る。
随意に、第四の期間Ｔ４の間、第二の前駆体の一部は除去されてもよい。逐次制御器３９は、除去システムを起動させて、反応チャンバー１から真空ポンプ３８を用いて第二の前駆体を除去してもよい。さらに、パージガスをパージシステムに提供して、反応チャンバー１を洗浄してもよい。メモリ４１のプログラムは、０．１〜１００秒、好ましくは０．５〜２０秒の第四の期間Ｔ２でプログラムされてもよい。
逐次的制御器３９のメモリ４１は、プログラムが装置の逐次制御器３９のプロセッサ上で実行されるとき、浸透シーケンスはＮ回繰り返すことができ、Ｎは１〜２０、好ましくは２〜１０、最も好ましくは３〜６であるようにプログラムされ得る。前駆体は、前駆体が金属または誘電体浸透材料を形成するように選択されてもよい。
第一の前駆体および第二の前駆体は、図１の装置において一緒に利用されて、酸化アルミニウム（Ａｌ２Ｏ３）酸化シリコン、（ＳｉＯ２）、窒化ケイ素（ＳｉＮ）、オキシ窒化シリコン（ＳｉＯＮ）、炭窒化ケイ素（ＳｉＣＮ）、炭化ケイ素（ＳｉＣ）、炭化チタン（ＴｉＣ）、窒化アルミニウム（ＡｌＮ）、窒化チタン（ＴｉＮ）、窒化タンタル（ＴａＮ）、タングステン（Ｗ）、コバルト（Ｃｏ）、酸化チタン（ＴｉＯ２）、酸化タンタル（Ｔａ２Ｏ５）、酸化ジルコニウム（ＺｒＯ２）、または酸化ハフニウム（ＨｆＯ２）を生成することができる。
２０〜４００℃、好ましくは５０〜２００℃、よりこのましくは６０〜１５０℃のプロセス温度、および反応チャンバー内の第一または第二の前駆体の圧力が、０．００１〜１０００Ｔｏｒｒ、好ましくは０．０５〜１００Ｔｏｒｒ、より好ましくは０．１〜１０Ｔｏｒｒであることが、凝縮を回避し、層の堆積にも好ましい。
示され説明された特定の実施形態は、本発明およびその最良の形態の例示であり、別途態様および実施形態の範囲をいかなるやり方でも限定することを意図しない。実際、簡潔さのために、従来の製造、関連、調製、およびシステムの他の機能的態様を詳細には説明していない場合がある。さらに、様々な図に示される接続線は、様々な要素間の例示的な機能的関係および／または物理的連結を表すことを意図する。多くの代替的もしくは追加の機能的関係、もしくは物理的接続が実際のシステムに存在してもよく、および／または幾つかの実施形態では存在しなくてもよい。
本明細書に記載される構成および／または方法は本質的に例示的であり、これらの特定の実施形態または実施例は、数多くの変形が可能であるので、限定的な意味で考えられるべきではないことが理解されるべきである。本明細書に記載される特定のルーチンまたは方法は、任意の数の加工方策のうちの一つまたは複数を表す場合がある。それ故に、例示された様々な動作は、例示される逐次で実施されてもよく、他の逐次で実施されてもよく、または場合によっては省略されてもよい。
本開示の主題は、本明細書で開示される様々なプロセス、装置、システム、および構成、ならびに他の特徴、機能、動作および／または特性の、全ての新規かつ自明でない組合せおよび部分的組合せ、ならびにその任意のおよび全ての均等物を含む。
１ ・・・反応チャンバー
２ ・・・下部セクション
３ ・・・上部反応チャンバー部分
４ ・・・リッド
５ ・・・底部反応チャンバー部分
６ ・・・第一の前駆体送達口
８ ・・・第二の前駆体送達口
９ ・・・シリンダー
１０ ・・・出口
１１ ・・・上部基材ホルダー
・・・
１３ ・・・底部基材ホルダー
１４ ・・・窪み
１５ ・・・基材
１６ ・・・ピストン
１７ ・・・エンドエフェクター
１９ ・・・クランプ
２１ ・・・サスペンション
２３ ・・・支持領域
３７ ・・・基材ハンドラー
３９ ・・・逐次制御器
４１ ・・・メモリ

Claims (22)

  1. 基材の表面上または表面に化学反応を提供するための化学的堆積、処理および／または浸透装置であって、前記装置は、
    閉鎖可能な反応チャンバーを一緒になって形成する、上部および底部反応チャンバー部分と、
    前記上部および底部反応チャンバー部分を、互いに対して少なくとも第一の方向に開位置から閉位置まで移動して、閉じた反応チャンバーを形成するように構成され、かつ配置されるアクチュエータと、
    少なくとも前記反応チャンバーが前記開位置にあるときに、前記上部反応チャンバー部分に接続されて基材を保持する上部基材ホルダーと、
    前記反応チャンバーが前記閉位置にあるときに、前記底部反応チャンバー部分に接続されて前記基材を保持する底部基材ホルダーと、を含む、装置。
  2. 前記装置が、
    前記反応チャンバーが前記開位置にあるときに、前記基材を前記第一の方向に実質的に垂直な第二の方向に移動させて、前記上部基材ホルダーの上に位置するように構成および配置される基材ハンドラーを含む、請求項１に記載の装置。
  3. 前記基材ハンドラーが、前記反応チャンバーが前記開位置にあるときに、前記上部基材ホルダーの上の位置から前記上部基材ホルダー上の位置まで、前記基材を前記第一の方向に移動させるように構成および配置される、請求項２に記載の装置。
  4. 前記装置が、前記上部および底部反応チャンバー部分が前記開位置から前記閉位置に移動するときに、前記上部基材ホルダーによって前記底部基材ホルダー上に保持される基材を位置付けるように構成および配置される、請求項１に記載の装置。
  5. 前記上部基材ホルダーが、前記底部反応チャンバー部分の方向に前記上部反応チャンバー部分から突出している、請求項１に記載の装置。
  6. 前記底部基材ホルダーが、前記上部および底部反応チャンバー部分が閉じて前記反応チャンバーを形成するときに、前記上部基材ホルダーを収容するための窪みを備える、請求項５に記載の装置。
  7. 前記底部基材ホルダーが、前記基材を受けるための平坦な表面を備える、請求項６に記載の装置。
  8. 前記底部基材ホルダーが、前記基材を加熱するためのヒーターを備える、請求項６に記載の装置。
  9. 少なくとも二つの上部基材ホルダーは、前記上部基材ホルダーによって保持される前記基材の中心に対して、互いに実質的に反対の二つの位置で、前記上部反応チャンバー部分に接続される、請求項１に記載の装置。
  10. 前記上部基材ホルダーは、
    前記基材を支持するための支持領域を備えるクランプと、
    前記クランプを前記上部反応チャンバー部分から吊るすためのサスペンションと、を含む、請求項９に記載の装置。
  11. 前記上部基材ホルダーが、実質的に水平な支持領域および実質的に垂直なサスペンションで構成および配置される、請求項１０に記載の装置。
  12. 前記上部基材ホルダーが、前記第一の方向に見られるＵ字形状を有する、請求項１に記載の装置。
  13. 前記装置が、前記基材を前記第一の方向に実質的に垂直な第二の方向に移動させるように構成および配置される基材ハンドラーを備え、前記上部基材ホルダーが前記第二の方向に見られるＬ字形状を有する、請求項１に記載の装置。
  14. 前記上部基材ホルダーが、前記第一および第二の方向に対して垂直な方向に見られる上下逆向きＴ字形状を有する、請求項１に記載の装置。
  15. 前記上部反応チャンバー部分が、前駆体を前記反応チャンバーに提供する前駆体分配システムと、前記反応チャンバーから前駆体を除去するための除去システムとに接続されて動作可能である、請求項１に記載の装置。
  16. 前記装置が、前記前駆体分配および除去システムを制御する逐次制御器を備え、前記装置が少なくとも第一の浸透サイクル中に浸透を実行することができるようにプログラムされたメモリを備え、前記浸透サイクルが、
    前記前駆体分配システムによって、前記反応チャンバー内で第一の期間、第一の前駆体を前記反応チャンバー内に提供することと、
    少なくとも第二の期間、前記除去システムによって、前記基材から前記第一の前駆体の一部を除去することと、
    前記前駆体分配システムを起動させることによって、第二の前駆体を前記反応チャンバー内に提供し、前記第二の前駆体を前記反応チャンバー内に第三の期間提供することと、を含む、請求項１５に記載の装置。
  17. 前記逐次制御器が、前記第一の前駆体を前記前駆体分配システムで前記反応チャンバーに提供した後に、前記前駆体分配および除去システムが浸漬期間中に不活性化される間、前記反応チャンバー内に前記第一の前駆体を残すようプログラムされる、請求項１６に記載の装置。
  18. 前記底部反応チャンバー部分が前記アクチュエータによって上下に移動可能であり、前記上部反応チャンバー部分の下に位置付けられている、請求項１に記載の装置。
  19. 前記反応チャンバーをシールするために、前記上部および底部反応チャンバー部分の間にＯリングが提供されている、請求項１に記載の装置。
  20. 閉鎖可能な反応チャンバーを一緒になって形成する上部および底部反応チャンバー部分を備える装置で、基材の表面上に化学的堆積、処理および／または浸透反応を提供するための方法であって、
    前記上部および底部反応チャンバー部分を、互いに対して閉位置から開位置まで第一の方向に移動させることと、
    前記上部反応チャンバー部分に接続された上部基材ホルダーの上の前記第一の方向に実質的に垂直な第二の方向に前記基材を移動させることと、
    前記基材を前記第一の方向に前記上部基材ホルダー上に移動させることと、
    前記第一および第二の反応チャンバー部分を、互いに対して前記第一の方向に開位置から閉位置まで移動させ、それによって前記底部反応チャンバー部分に接続された底部基材ホルダーが、前記基材を前記上部基材ホルダーから受けることと、
    前記反応チャンバー内の化学反応のために、少なくとも第一の前駆体を前記前駆体分配システムに提供することと、を含む、方法。
  21. 前記方法が、
    前記前駆体分配システムによって、第一の期間、前記第一の前駆体を前記反応チャンバー内に提供することと、
    前記第一の前駆体の一部を、前記前駆体除去システムによって少なくとも第二の期間に、前記反応チャンバーから除去することと、
    第三の期間、前記前駆体分配によって前記反応チャンバー内に前記第二の前駆体を提供し、前記第一と第二の前駆体との間に化学反応を生じさせ、前記基材の表面上に層を堆積させおよび／または表面に材料を浸透させることとを含む、請求項２０に記載の方法。
  22. 前記方法が、ロード期間の間、前記前駆体分配を用いて前記第一の前駆体を前記反応チャンバーに提供した後、
    浸漬期間ＳＰの間、前記前駆体分配および除去システムを停止させた状態で、前記第一の前駆体を前記反応チャンバー内に留めることを含む、請求項２１に記載の方法。
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JP2016516293A (ja) * 2013-04-08 2016-06-02 ユ−ジーン テクノロジー カンパニー．リミテッド 基板処理装置
JP2016540372A (ja) * 2013-10-17 2016-12-22 ユ−ジーン テクノロジー カンパニー．リミテッド 基板処理装置

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