CN110890290B - 衬底处理方法 - Google Patents

衬底处理方法 Download PDF

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CN110890290B
CN110890290B CN201910822358.5A CN201910822358A CN110890290B CN 110890290 B CN110890290 B CN 110890290B CN 201910822358 A CN201910822358 A CN 201910822358A CN 110890290 B CN110890290 B CN 110890290B
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T·奥斯特拉肯
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Abstract

本发明提供了一种衬底处理设备，包括：提供了支撑表面(34)的衬底支撑件(32)，所述支撑表面用于在其上支撑衬底或衬底载体(24)；和支撑加热器(50)，所述支撑加热器被构造并被布置成加热所述支撑表面(34)。所述设备包括热屏蔽，所述热屏蔽被构造并被布置成在所述支撑表面上没有衬底或衬底载体(24)时覆盖并屏蔽所述衬底支撑件(32)。

Description

衬底处理方法
技术领域
本公开涉及衬底处理设备和方法领域。更具体地说，本公开涉及一种衬底处理设备以及使用这种设备的方法，所述衬底处理设备包括：设置了支撑表面的衬底支撑件，所述支撑表面用于在其上支撑衬底或衬底载体；和支撑加热器，所述支撑加热器被构造和布置成加热支撑表面。
背景技术
在竖直分层式烘炉(batch furnace)中同时处理多个衬底(例如，半导体晶片)提出了如何使所有堆叠到衬底载体(例如，晶舟(wafer boat))中的晶片在跨越其各自的表面面积上经受基本上相同的过程条件的问题。一种此类过程条件是温度均匀性。为了在一批次的晶片上获得均匀的处理结果，可优选地通过靠近工艺室的侧壁并靠近工艺室的顶壁设置的加热装置将其每一个晶片基本上均匀地加热到共同温度。
尤其是关于衬底舟(substrate boat)中的上部晶片，晶片与晶片间温度均匀性通常不是一个重要问题，虽然晶片内温度均匀性(由于炉的构造的不对称性)可通过任选的舟旋转机构增强。然而，在竖直分层式烘炉中，晶舟中的下部晶片的温度均匀性可证明是难以控制的。这可能是由于其紧密地位于炉的相对冷的下部门区。为了减轻其位置的影响，从下方支撑晶舟的基座可以设置有用于加热下部晶片的支撑加热器。
在不需要时，支撑加热器同样可加热衬底支撑件和周围环境。当衬底支撑件中的衬底可以移出反应器以冷却并用晶片操纵器更换衬底时可能发生后一种情况。这种加热可导致衬底支撑件的非均匀加热，衬底支撑件中的衬底冷却较慢，和/或在操纵衬底期间气流变形。
因此，期望提供改进的衬底处理设备。
发明内容
提供本概述是为了以简化的形式引入一系列概念。下文在本公开的实例实施例的详细描述中更详细地描述这些概念。本概述不打算标识所要求的主题的关键特征或必要特征，也不打算用于限制所要求的主题的范围。
根据实施例，提供了一种改进的衬底处理设备。所述衬底处理设备包括：设置了支撑表面的衬底支撑件，所述支撑表面用于在其上支撑衬底或衬底载体；和支撑加热器，所述支撑加热器被构造并被布置成加热所述支撑表面。所述设备包括热屏蔽，所述热屏蔽被构造并被布置成当在所述支撑表面上没有衬底或衬底载体时覆盖并屏蔽所述衬底支撑件。
根据另一个实施例，提供了一种方法，其包括：
-交换所述衬底载体的至少一个衬底，同时在利用所述衬底加热器加热所述衬底支撑件的支撑表面时，用所述热屏蔽覆盖所述衬底支撑件；
-相对于彼此移动所述衬底支撑件和所述热屏蔽以便将所述衬底载体支撑在所述支撑表面上；以及
-将所述衬底载体中的衬底移动到反应器中。
出于概述本发明和优于现有技术而实现的优势的目的，上文中描述了本发明的某些目标和优势。当然，应当理解，未必所有这些目的或优点都可以根据本发明的任何特定实施例来实现。因此，例如，所属领域的技术人员将认识到，本发明可以按实现或优化如本文中所教示或建议的一种优势或一组优势但不一定实现如本文中可能教示或建议的其它目的或优势的方式来实施或进行。
所有这些实施例都意图在本文中所公开的本发明的范围内。对于所属领域的技术人员来说，这些和其它实施例将从参考附图的某些实施例的以下详细描述变得显而易见，本发明不限于所公开的任何特定实施例。
附图说明
虽然本说明书以具体地指出并明确地要求保护被视为本发明实施例的内容的权利要求书结束，但在结合附图阅读时，可以从本公开的实施例的某些实例的描述中更容易地确定本公开的实施例的优势，在附图中：
图1是包括可旋转基座-加热器组合的坚直分层式烘炉的示意性横截面侧视图；
图2是图1所示的垂直分层式烘炉的基座部段的放大横截面侧视图；
图3a至3d示意性地示出根据实施例的示例性坚直热炉；和
图4示意性地示出根据另一个实施例的另一示例性坚直热炉。
具体实施方式
尽管下文公开了某些实施例和实例，但所属领域的技术人员将理解，本发明延伸超出了本发明具体公开的实施例和/或用途以及显而易见的修改和其等效物。因此，希望本发明所公开的范围不应受下文所描述特定公开实施例的限制。本文中呈现的图解不打算作为任何特定材料、结构或装置的实际视图，而仅仅是用以描述本公开的实施例的理想化图示。
如本文所使用，术语“衬底”或“晶片”可指可使用的或上面可形成装置、电路或膜的任何一种或多种下层材料。术语“半导体装置结构”可指代经处理或经部分处理的半导体结构的任何部分，其包含或限定待形成于半导体衬底上或半导体衬底中的半导体装置的有源或无源部件的至少一部分。举例来说，半导体装置结构可包含集成电路的有源和无源部件，例如晶体管、存储器元件、换能器、电容器、电阻器、导电线、导电通孔和导电接触垫。
图1和图2示意性地在横截面侧视图中示出竖直热处理烘炉或反应器1。炉1可以是单管类型，并且可以包括大致钟罩形的反应管10。反应管10可界定反应室12，所述反应室限定可以处理衬底(例如晶片)的反应空间14。
反应管10可以由管式加热器围绕或环绕，所述管式加热器用于加热收纳在反应空间14中的晶片，所述管式加热器诸如由电源(未示出)供电的电阻加热线圈18。管式加热器18可以固定到环绕或围绕反应管10的隔热套筒16。反应管10可具有大体上管状的横截面形状，例如，圆形或多边形横截面形状，并且沿着中心轴线L延伸。关于制造材料，反应管10可由石英、碳化硅、硅或另一种合适的耐热材料制成。在其下部开放端，反应管10可支撑于凸缘20上，所述凸缘限定中心炉开口22，晶舟24可经由中心炉开口进入和/或离开反应室12。
晶舟24(衬底载体)可包括多个槽26(例如，在10到300之间，优选在25到250之间)以用于保持相同的许多半导体衬底28(图1和图2中仅显示其中一个)，所述晶舟可支撑在衬底支撑件32的支撑表面34上(例如，支撑组件30的基座)。衬底支撑件32可以借助于轴承(例如，滚动轴承、液压轴承或磁轴承)安装在门板或密封盖42上。可使用升降机或提升机(未示出)，使得衬底支撑件32和晶舟24可以分别在处理的开始和结束时升高到反应室12中以及从反应室放下。为了确保反应室12能够以气密方式密封，若干弹性O形环46可以用在炉1的下部部分，特别是用在反应管10与凸缘20之间以及凸缘20与门板42之间。
衬底支撑件32可至少部分地填充有隔热材料38，使其能够用作门板42和凸缘20两者的热屏蔽，并且减少通过炉1的下部部分的热损失。隔热材料38搁置在底板39上，所述底板相对于容器36的壁可移动(可旋转)。衬底支撑件32可进一步容纳支撑加热器50。
在支撑表面34下方，支撑加热器50可以展开以覆盖大致等于支撑表面34的面积的区域，以便能够加热晶舟24中的(下部)衬底28的整个表面。在所描绘的实施例中，该加热器固定地连接到隔热材料38和底板39。用于(电)连接到支撑加热器50的向上延伸的连接部分52嵌入到隔热材料38中，同时水平延伸部分搁置于所述隔热材料上。
可以提供电机驱动装置以围绕反应室12的中心轴线L旋转衬底支撑件32。由于晶舟24刚性地连接到衬底支撑件32，它将与衬底支撑件一致地旋转。门板42以及炉1的固定结构的其余部分，例如，反应管10和隔热套筒16在衬底支撑件32的容器36旋转期间保持静止。底板39、隔热材料38和支撑加热器50优选地还在容器36旋转期间保持静止。这可具体通过将底板39与绝缘材料38和支撑加热器50一起固定地或刚性地连接到炉1的静止部分来完成，所述炉的静止部分(诸如门板42)关于衬底支撑架32的旋转轴线L不可旋转地安装。
衬底支撑件32可包括顶板、圆柱形侧板和底板，所述顶板、所述圆柱形侧板和所述底板可互连以限定大体上圆柱形容器36。顶板的外表面可以限定衬底支撑件30的支撑表面34。容器36可限定在顶板和底板之间延伸的主体，所述主体容纳支撑加热器50的至少一部分。
圆柱形容器36的主体可进一步容纳隔热材料38。支撑加热器50可邻近顶板设置，且隔热材料38可设置于支撑加热器50下方，所述支撑加热器可搁置在隔热材料38上。
或者，支撑加热器50可以可旋转方式安装。在这种情况下，支撑加热器50的旋转运动可以例如借助于具有适当的齿轮/速度比的齿轮机构或流体联接以机械方式联接到衬底支撑件32旋转运动，确保衬底支撑件32将相对于支撑加热器50旋转。可旋转安装的支撑加热器50还可设置有专用电机驱动装置，所述专用电机驱动装置被配置成以与衬底支撑件32被驱动的不同角速度旋转支撑加热器。
在不需要时支撑加热器50同样可加热衬底支撑件和周围环境。当衬底支撑件32中的衬底可以用升降机(未示出)移出反应器以冷却并用晶片操纵器(未示出)更换衬底时可能发生后一种情况。这种加热可导致衬底28的非均匀加热，因为支撑加热器50在衬底加载期间已经可能加热衬底载体的下部部分，例如，在下部部分中的晶舟24和衬底28。同样，由于支撑加热器50是热的，在衬底载体(例如，晶舟24)中的衬底28的冷却可能变得更慢。在衬底处置期间的气流也可能由于支撑加热器50是热的而变形。例如，可以由热衬底支撑件产生向上流动，而向下流动可以是优选的，以避免衬底上的颗粒污染。暂时关闭支撑加热器50可能不是可行的解决方案，因为可能导致加热次数增加。
图3a至3d示意性地示出根据实施例的示例性竖直热炉，其中被构造并被布置成当在支撑表面上没有衬底或衬底载体时覆盖并屏蔽衬底支撑件的热屏蔽可在衬底支撑件32上方移动。为了不搞混图3a至3d的讨论，图1和图2中的相同参考数字用于类似部件。然而，应理解，图3a至3d中所描绘的各种部件的物理性质和其之间的关系可不同于图1和图2中的那些。图3a至3d中所展示的竖直热炉的其它部件可大体上与上文所描述的常规炉1的对应部件相同。参考图3a至3d的示例性竖直炉，现在可以用一般术语阐明本实施例。使用热屏蔽，当在支撑表面上没有衬底28或衬底载体24时，加热衬底载体和衬底支撑件32的周围环境可以被规避。
在图3a中，支撑于衬底支撑件32上的衬底载体24中的衬底可以在反应室12中被处理。反应室12可以用门板42关闭，衬底可以用管式加热器(未示出)和支撑加热器50加热。已经在反应室12中处理衬底28之后，可将衬底支撑件32中的衬底移出反应室12以冷却(参见图3b)。因此该设备可以包括致动器，该致动器被构造并被布置成相对于彼此移动热屏蔽和衬底支撑件32中的至少一个。例如，所述设备可以包括升降机59，所述升降机被构造并被布置成在竖直方向上移动衬底支撑件32。升降机59可以具有运动部分63，该运动部分可以沿着由电机67驱动的主轴65移动。
如图3c所示，衬底载体24可以用升降机完全移出反应室12。随后，反应室12可用反应室门35关闭。反应室门35关闭后，将反应室12保持在正确温度下可能更容易，同时不加热周围环境(包括在冷却位置的衬底载体，例如晶舟24)。
衬底载体24可以与衬底支撑件32分离，如图3d所示。衬底支撑件32可以用热屏蔽57覆盖。所述设备可包括原动机，该原动机被构造并被布置成在水平方向上移动热屏蔽57和衬底支撑件32中的至少一个，以覆盖并屏蔽衬底支撑件32。当在支撑表面34上没有衬底或衬底载体24时，热屏蔽57可以覆盖并屏蔽衬底支撑件32。当在支撑表面34上没有衬底28或衬底载体24时，衬底载体24和衬底支撑件32的周围环境的加热可以被热屏蔽57规避。
热屏蔽57可至少部分地形成腔室，该腔室被构造并被布置成将衬底支撑件32贮存在其中。腔室基本上可以是气密的，以保持腔室内的热量。热屏蔽可包括隔热材料，隔热材料将衬底支撑件32与衬底载体24和衬底支撑件32的周围环境热隔离。
炉的门板42可以形成腔室的一部分。热屏蔽可包括上屏蔽和圆柱形侧屏蔽，所述上屏蔽和所述圆柱形侧屏蔽互连以限定大体上圆柱形的腔室，以在支撑表面上没有衬底或衬底载体24时覆盖并屏蔽衬底支撑件32。大体上为圆柱形的腔室的开口可以用炉的门板42关闭。
图4示意性地示出根据另一个实施例的示例性竖直热炉，其中被构造并被布置成当在支撑表面上没有衬底或衬底载体时覆盖并屏蔽衬底支撑件的热屏蔽可在衬底支撑件32上方移动。为了不搞混讨论，与图1-3中相同的参考数字用于类似部件。然而，应理解，图4中所描绘的各种部件的物理性质和其之间的关系可不同于图1-3中的那些。
图4公开了包括凹部69的设备，该凹部可以用热屏蔽57关闭以形成腔室，该腔室被构造并被布置成将衬底支撑件32贮存在其中。凹部69和热屏蔽57可使衬底支撑件32与衬底载体24和衬底支撑件32的周围环境热隔离。
在图1的设备1中，衬底支撑组件30可包括衬底支撑件32，所述衬底支撑件可以相对于(假想)旋转轴线L可旋转地安装。衬底支撑件32可包括大体上圆柱形容器36，其关于旋转轴线L居中。容器36可包括顶壁、圆柱形护套形侧壁和底壁，这些壁互连以形成容器36。顶壁和底壁可优选地为基本上平坦的。容器36的顶壁可以提供外部的面向上的衬底支撑表面34。旋转轴线L可延伸穿过此衬底支撑表面34，并且优选地与其垂直。
在顶壁和底壁之间延伸的容器的主体可限定两个主体部分。第一主体部分邻近顶壁，可限定用于收纳支撑加热器50的热生成部分的内部空间。第二主体邻近底壁，可限定围绕旋转轴线L的内部环形空间，该空间可用隔热材料38填充。隔热材料可以与容器36为固定的非旋转关系。
容器36可进一步限定从第一主体部分穿过第二主体部分和其中设置的隔热材料延伸的中空轴，并且中空轴可自由地容纳用于支撑加热器50的连接部分52。底壁可以包括或可以连接到圆柱形护套形的向外延伸的突起或驱动轴，所述突起或驱动轴以旋转轴线L为中心，且具有的外径显著小于主体部分的外径。驱动轴可限定提供到圆柱形容器36的主体的内部的通路的通道。关于具有驱动轴的衬底支撑件的更多信息可以来源于以引用方式并入本文中的美国专利号9,018,567。
衬底支撑组件30还可包括支撑加热器50。支撑加热器50可包括热生成部分。连接部分52可以具有细长或直线形状，其具有第一下端和第二上端。其可以自由地穿过中空轴向上延伸。在连接部分52的第二上端通过轴时，其可连接到支撑加热器50的热生成部分。热生成部分可以基本上是平坦的，并在下面的平面中延伸，邻近并平行于支撑表面34，并且优选地覆盖基本上等于支撑表面34的面积的区域。在优选的实施例中，支撑加热器50的热生成部分可包括电阻加热器，例如(平面)加热盘管，其中心点可以连接到连接部分52的第二端以获取电力。
支撑组件30还可以包括基部，其在所描绘的竖直炉1中可包括炉的门板42。衬底支撑件32可借助于轴承44可旋转地安装在此门板42上。轴承44可优选地在其下端处连接到衬底支撑件32(即，在衬底支撑表面34的远侧的端部)，使得轴承44基本上设置在衬底支撑件32下方，并且与支撑于支撑表面34上的衬底28要经受的过程气氛屏蔽。在所描绘的实施例中，轴承44接合从容器36的底壁延伸的驱动轴突起。连接部分52的第一下端可以固定地/不可旋转地附接到门板42。在实施例中，在除了其连接部分52连接到门板42之外，没有外部物理支撑件以确保其保持其位置或配置的意义上，支撑加热器50可以是自支撑的。具体讲，支撑加热器50确实不与可旋转地安装的衬底支撑件32机械接触。
可以设置电机驱动装置以使衬底支撑件32相对于门板42围绕其中心轴线L旋转，且因此围绕支撑加热器50的连接部分52旋转。因此，设置在支撑表面34的顶部上并且保持一个或多个衬底28的衬底载体24可以相对于加热装置18并相对于支撑加热器50旋转，以平均在加热装置18和支撑加热器50的热生成部分的加热分布曲线中的不均匀性可能对晶片产生的效应。
为了进一步优化下部晶片的温度均匀性，支撑加热器50可包括多于一个区，每个区的热生成部分仅在衬底支撑表面34的一部分上延伸。例如，第一区可以在支撑表面34的中心区域上方延伸，第二区可以在支撑表面34的外部区域上方延伸。在另一个实施例中，第一区可以在支撑表面34的第一切向延伸区域上方延伸，第二区可以在支撑表面34的第二切向延伸区域上方延伸。每个区在连接部分52中包括两根引线。
尽管上文已经参考附图描述了本发明的示例性实施例，但是应当理解，本发明不限于这些实施例。在实施所要求保护的发明时，本领域的技术人员根据对附图、公开内容和所附权利要求的研究可以理解并且实现公开的实施例的变化。
贯穿本说明书对“一实施例”或“实施例”的引用意指结合实施例描述的特定特征、结构或特性包括在本发明的至少一个实施例中。因此，贯穿本说明书的不同位置处的短语“在一个实施例中”或“在实施例中”的出现不一定都是指相同的实施例。此外，应当注意，一个或多个实施例的特定特征、结构或特性可以以任何合适方式组合以形成新的未明确描述的实施例。

Claims (11)

1.一种衬底处理方法，其包括：
提供衬底处理设备，其包括：设置有支撑表面的衬底支撑件，所述支撑表面用于在其上支撑衬底载体，所述衬底载体连接到所述衬底支撑件的支撑表面，并且被配置成保持至少一个衬底；和支撑加热器，所述支撑加热器设置在所述支撑表面下方，所述支撑加热器被构造并且被布置成加热所述支撑表面，其中，所述设备包括热屏蔽，所述热屏蔽被构造并且被布置成在所述支撑表面上没有衬底载体时覆盖和屏蔽所述衬底支撑件，所述热屏蔽至少部分地形成腔室，所述腔室被构造并且被布置成将所述衬底支撑件贮存在其中；
交换所述衬底载体中的至少一个衬底，同时在利用所述支撑加热器加热所述衬底支撑件的所述支撑表面时，使用所述热屏蔽覆盖所述衬底支撑件；
相对于彼此移动所述衬底支撑件和所述热屏蔽以便将所述衬底载体支撑在所述支撑表面上；以及
将所述衬底载体中的衬底移动到所述衬底处理设备的反应器中，所述反应器包括限定反应空间和开口的反应室，支撑组件经由所述开口能够至少部分地收纳在所述反应室中，使得所述衬底载体能够收纳在所述反应空间中，所述支撑组件包括所述衬底支撑件和所述支撑加热器。
2.根据权利要求1所述的衬底处理方法，其中所述热屏蔽能相对于所述衬底支撑件的支撑表面单独地且独立地移动。
3.根据权利要求1所述的衬底处理方法，其中所述设备包括凹部，所述凹部能够用所述热屏蔽关闭以形成腔室，所述腔室被构造并且被布置成将所述衬底支撑件贮存在其中。
4.根据权利要求1所述的衬底处理方法，其中所述腔室基本上是气密的。
5.根据权利要求1所述的衬底处理方法，其中所述热屏蔽包括隔热材料，所述隔热材料热隔离所述衬底支撑件。
6.根据权利要求1所述的衬底处理方法，其中所述热屏蔽包括上屏蔽和圆柱形侧屏蔽，所述上屏蔽和所述圆柱形侧屏蔽互连以限定大体上圆柱形的腔室，以在所述支撑表面上没有衬底载体时覆盖和屏蔽所述衬底支撑件。
7.根据权利要求1所述的衬底处理方法，其中，所述设备包括致动器，所述致动器被构造并且被布置成相对于彼此移动所述热屏蔽和所述衬底支撑件中的至少一个，以便在所述支撑表面上没有衬底载体时覆盖和屏蔽所述衬底支撑件。
8.根据权利要求7所述的衬底处理方法，其中所述设备包括升降机，所述升降机被构造并且被布置成在竖直方向上移动所述衬底支撑件。
9.根据权利要求1所述的衬底处理方法，其中所述衬底支撑件包括顶板、圆柱形侧板和底板，所述顶板、所述圆柱形侧板和所述底板互连以限定大体圆柱形容器；
其中，所述顶板的外表面限定所述衬底支撑件的支撑表面；并且
其中，所述容器限定为在所述顶板和所述底板之间延伸的主体，所述主体容纳所述支撑加热器的至少一部分。
10.根据权利要求9所述的衬底处理方法，其中所述圆柱形容器的所述主体进一步容纳隔热材料，并且其中所述支撑加热器的热生成部分邻近所述顶板设置，并且其中所述隔热材料设置于所述支撑加热器的热生成部分下方。
11.根据权利要求1所述的衬底处理方法，其中所述设备为竖直热炉；
其中所述反应室至少部分地由钟罩形的反应管形成，并且
其中所述衬底支撑件经由所述反应管的下端处的开口能够至少部分地收纳于所述反应管中，使得所述支撑组件处于收纳状态时基本上关闭所述反应管的所述开口。
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