TWI817978B - 半導體處理裝置及處理基板之方法 - Google Patents

半導體處理裝置及處理基板之方法 Download PDF

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TWI817978B
TWI817978B TW108101158A TW108101158A TWI817978B TW I817978 B TWI817978 B TW I817978B TW 108101158 A TW108101158 A TW 108101158A TW 108101158 A TW108101158 A TW 108101158A TW I817978 B TWI817978 B TW I817978B
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gas
base
chamber
channel
semiconductor processing
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TW201943884A (zh
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派提 瑞薩能
大衛 馬夸特
湯瑪士 阿斯瓦德
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荷蘭商Ａｓｍ 智慧財產控股公司
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Abstract

本發明提供一種半導體處理裝置。此裝置可包含一反應腔室及一基座，基座設置於反應腔室中，係配置以支持基座上方之一基板，基座包含在基座垂直方向上之複數個通孔。此裝置還可包含複數個頂桿，複數個頂桿中每個頂桿係設置於各自之通孔中，以及至少一氣體傳輸通道。至少一氣體傳輸通道包含一或多個氣體通道出口，一或多個氣體通道出口係設置鄰近於複數個通孔。本發明亦提供用以處理一反應腔室中一基板之方法。

Description

半導體處理裝置及處理基板之方法
本發明大體上相關於半導體處理裝置之領域，特別而言，為一種包含一機制用以防止由基座所支持之基板之污染物之半導體處理裝置。除此之外，本發明大體上相關於處理一基板之方法領域，特別而言，為一種在相處理過程中防止一基板污染物之方法。
反應腔室可用來沉積各種金屬層至半導體基板上。一半導體基板，舉例而言，例如一矽基板，可經放置於內有一反應腔室之一基座上。基板及基座皆可加熱至一所設定之基板溫度設定點。在一範例基板處理程序中，一或多個反應氣體可通過一已加熱之基板使得在基板表面上之金屬薄膜沉積。藉由後續沉積、摻雜、曝光、蝕刻及其他程序，這些層將形成於積體電路上。
反應腔室通常以一單一腔室或一雙重腔室製成。在一雙重腔室配置中，此兩個腔室可為指向地以一腔室垂直置於第二腔室上方。上層腔室可用來處理基板，而下層腔室可用來裝載半導體處理裝置或從半導體處理裝置卸除。在操作包含雙重腔室之半導體處理裝置的過程中，不預期之污染物可能累積且/或耗廢下層腔室，而為清潔腔室且/或清理沉積於上層腔室不想要的基板污染物，可能導致不預期之停工。因此，需要有用來防止污染物沉積於上層腔室之裝置與方法，以改進半導體處理協定。
本發明內容以簡化形式來介紹一系列之概念。這些概念會在下文的本發明示例實施例中做進一步詳述。本發明內容非意圖界定所請求保護標的之關鍵特徵或必要特徵，亦非意圖用來限制所請求保護標的的申請專利範圍。
在一些實施例中，提供一種半導體處理裝置。此裝置可包含一反應腔室及一基座，基座設置於反應腔室中，係配置以支持基座上方之一基板，基座包含在基座垂直方向上之複數個通孔。此裝置還可包含複數個頂桿，複數個頂桿中每個頂桿係設置於各自之通孔中，以及至少一氣體傳輸通道。至少一氣體傳輸通道包含一或多個氣體通道出口，一或多個氣體通道出口係設置鄰近於複數個通孔。
在一些實施例中，提供用於處理一基板之方法。此方法可包含：提供一反應腔室，及提供一基座，基座設置於反應腔室中，係配置以支持基座上方之一基板，基座包含在該基座垂直方向上之複數個通孔。此方法亦可包含：提供複數個頂桿，複數個頂桿中每個頂桿係設置於各自之通孔中，以及提供至少一氣體傳輸通道，至少一氣體傳輸通道包含一或多個氣體通道出口，一或多個氣體通道出口係設置鄰近於複數個通孔。此方法亦可包含：透過至少一氣體傳輸通道使一氣體流動，氣體透過一或多個氣體通道出口離開氣體傳輸通道。
為概述本發明之目的及相較於先前技術所達成之優點，本發明之特定目的及優點已描述於上文中。當然，應明瞭無須所有該等目的或優點皆可根據本發明之任何特定具體實施例來達成。因此，舉例而言，此技術領域中具有通常知識者當認知本發明可依達成或最佳化本文所教示或提出之一個優點或一組優點而無須達成本文中可能教示或提出之其他目的或優點的方式來具體化或實施。
此等具體實施例全部意欲在本文所揭示之本發明範疇內。此等及其他具體例將自以下參考附圖的某些實施例之詳細描述而對本領域通常知識者變得顯而易見，但本發明並不受限於所揭示之任何特定實施例。
儘管在下文中揭示特定實施例及實例，但此技術領域中具有通常知識者應理解，本發明延伸超出本發明所具體揭示之實施例及/或用途及其明顯修改及其等效物。因此，應理解所揭示之本發明範疇不應受限於下文所描述之特定揭露的實施例。
本文介紹的圖示並非表示為任何特定材料、構造或裝置的實際視圖，而僅用於描述本發明實施例的理想狀況。
如本文所使用，術語「基板」可指代可為使用或在其上可形成裝置、電路或膜之任何底層材料。
如本文所使用，術語「原子層沉積(ALD)」可指在處理腔室中實施沉積循環(較佳地複數個連續沉積循環)的氣相沉積製程。通常地，在各循環期間，前體係化學吸附至沉積表面(例如基板表面或先前所沉積之底層表面，例如來自先前ALD循環之材料)，從而形成不容易與其他前體反應(亦即自我限制反應)的單層或亞單層。之後，必要時可接著將反應物(例如另一前體或反應氣體)引入至處理腔室中以用於將經化學吸附之前體轉化為沉積表面上的所需材料。通常地，此反應物能夠進一步與前體反應。此外，亦可在各循環期間利用清洗步驟自處理腔室移除過量前體及/或在轉化經化學吸附之前體後自處理腔室移除過量反應物及/或反應副產物。進一步而言，本文所使用之術語「原子層沉積」，意指當在用前體組合物、反應氣體及清洗(例如惰性載劑)氣體之交替脈衝執行時，亦包括由相關術語指稱之製程，例如「化學氣相原子層沉積」、「原子層磊晶法(ALE)」、分子束磊晶法(MBE)、氣體源MBE或有機金屬MBE及化學束磊晶法。
本文所使用之術語「化學氣相沉積」，可指其中基板暴露於一或多揮發性前體之任何處理，該等前體在基板表面上反應及/或分解以產生所需沉積物。
本文中所使用之術語「膜」及「薄膜」可指藉由本文中所揭示方法而沉積之任何連續或不連續結構及材料。舉例而言，「膜」及「薄膜」可包括2D材料、奈米棒、奈米管或奈米粒子，或甚至部分或完全分子層或部分或完全原子層或原子及/或分子之群集。「膜」及「薄膜」可包含具有針孔，但仍為至少部分連續之材料或層。
本文所使用之術語「污染物」可指在反應腔室中任何不需要之材料，而該等材料可能影響置於反應腔室中基本之純度。此術語「污染物」可指，但非用以限制，沉積於反應腔室中不需要之沉積物、非金屬粒子、雜質及廢棄產品。
所揭露之實施例可包含半導體處理裝置及在半導體處理裝置中可用來處理基板之方法。半導體處理裝置可包含一雙重腔室模組，其中上層腔室經配置以處理一或多基板，以及一下層腔室經配置以裝載一或多基板至半導體處理裝置或從半導體處理裝置卸除。
在一些實施例中，利用一或多封裝構件，上層腔室與下層腔室可實體上地彼此隔開。上層腔室之封裝，經使用於基板之處理中，可理想地防止來自下層腔室之前體氣體接觸裝置之下層腔室。舉例而言，經使用以在上層處理基板之前體氣體可包含，腐蝕性沉積前體，可接觸下層腔室產生不需要之沉積物/污染物/粒子，這些不需要之沉積物/污染物/粒子將重導引至上層腔室因而提供一污染物之來源至置於上層腔室之基板。
在一些實施例中，一第一封裝構件可位在置於上層腔室中之基座周邊，以及一第二封裝構件可位於上層腔室與下層腔室之間，其中此第一及第二封裝構件經選擇地與另一個接合以限制上層腔室與下層腔室之流通。即使封裝構件可實體上地防止上層腔室與下層腔室間之流體流通，小體積之前體氣體仍有可能藉由擴散穿透封裝構件進入下層腔室，這導致在半導體裝置反應腔室之下層腔室中可能的腐蝕、不需要之沉積物及污染物。
除了封裝構件實體上地防止流體流通於上層腔室與下層腔室間，處理參數也可經使用以藉由接觸半導體處理裝置之下層腔室減少不需要的前體氣體。舉例而言，在一些實施例中，流動於下層腔室中之一清洗氣體、一惰性氣體或其他氣體可以以大於在上層腔室中氣體流動壓力之一壓力加來提供，因而實體上地防止在上層腔室中前體氣體之流動藉由擴散穿透至下層腔室。
在下層腔室與上層腔室中基板之轉換可透過使用頂桿來轉換。舉例而言，一基座，在處理過程中基板可置於其上，可包含複數個通孔。每一通孔可具有一相對應之頂桿，頂桿能橫越在下層腔室與上層腔室之間的垂直平面中。舉例而言，在一些實施例中，半導體處理裝置可包含一基座，基座三個通孔，對應三個頂桿，三個頂桿可在垂直平面中同步地上下移動以在下層腔室與上層腔室間提升或下降。雖然這些通孔可預期地用以容納頂桿並利於基板轉移，然而通孔也可同時作為在上層腔室與下層腔室間不需要的流體流通路徑。舉例而言，任何不需要的污染物沉積於下層腔室內可累積於通孔中，導致由基座所支撐基板之反面污染。相對於上層腔室可驅使污染物向上，一般出現於下層腔室之增壓可能使污染物處理更惡化，其中污染物可透過通孔穿透並污染上層腔室，包括由基座所支撐之基板反面。
因此，需要有裝置及方法來防止污染物透過在基座中的多個通孔穿越而出現於下層腔室隨後污染上層腔室並特別污染到由基座所支撐之基板背面。為了解決這些污染物問題，本發明所揭露之實施例包含用以提供鄰近於複數個通孔之清洗氣體之系統與方法，清洗氣體提供一保護性氣體屏可實體上地防止污染物累積於多個通孔及其周圍並實體上地防止任何不需要之污染物透過多個通孔氣體穿透並接觸上層腔室特別是基板之背面。本發明所揭露之實施例因此提供一氣體傳輸通道，包含置於鄰近通孔及其相對應頂桿之一或多個氣體出口。清洗氣體可經由一或多個氣體傳輸通道流動並在鄰近通孔之一或多個氣體出口離開，因而實體上地防止在上層腔室中之污染物問題，特別是基座所支撐之基板背面污染。
因此，本發明所揭露之實施例可提供半導體處理裝置，此裝置包含一反應腔室、一基座，設置於反應腔室中，係配置以支持基座上方之一基板，基座包含在基座垂直方向上之複數個通孔。裝置也可包含：複數個頂桿，複數個頂桿中每個頂桿係設置於各自之通孔中；以及至少一氣體傳輸通道，通道包含一或多個氣體通道出口，一或多個氣體通道出口係設置鄰近於複數個通孔。
本發明所揭露之實施例可參閱圖1及圖2來說明示範之反應腔室100，而可實現所揭露之實施例。在一些實施例中，反應腔室100可經配置以執行原子層沉積處理，在其他實施例中，反應腔室100可加以配置以執行化學氣相沉積處理。具體而言，圖1及圖2說明反應腔室100中裝置/卸除位置(圖1)及處理位置(圖2)之斷面圖。反應腔室100可包含一上層腔室102以及一下層腔室104，由一介面板106隔開。通常而言，處理程序發生於上層腔室102之中，而基板裝載或卸除發生於下層腔室104中。一基座108包含一基板架設面110，並與一垂直可移動式升降梯112連接以在基板裝載位置與基板處理位置間移動。如圖2所示，當基座108以箭號118之方向向上移動，基板114可位於基板架設面110上並位於處理區域116中，而蓮蓬頭120定義出處理區域之上表面。在所揭露之一些實施例中，一第一封裝構件122可置於基座108並可從其移開，而一第二封裝構件124可位於上層腔室102與下層腔室104之間。在一些實施例中，第二封裝構件124可置於介面板106上至少一部分或可連接至介面板或反應腔室100之任何其他合適部分。如圖3及圖4所示，反應腔室100可包含複數個頂桿，例如示範之頂桿126,，頂桿126,及相關特徵將以更具體之細節說明於反應腔室100之部分放大圖，並說明目前揭露之底感清洗裝置示範實施例。
圖3係根據本發明之一實施例說明頂桿清洗機構之一展開圖。在所揭露之一些實施例中，頂桿126包含頂桿頂端126A及頂桿底端126B，頂桿126設置於通孔132中，通孔設置於基座108中之軸向。基板114置於基座108上並與頂桿頂端126接觸，基板114置於處理位置。處理區域116位於上層腔室102中基板114之直接上方，處理區域116之上層範圍由蓮蓬頭120之下層表面所界定。圖3之示範性頂桿清洗機構也可包含至少一氣體傳輸通道128，氣體傳輸通道128經配置以使氣體，例如清洗氣體，流動至下層腔室104。在一些實施例中，至少一氣體傳輸通道128可透過合適的氣體線路、閥門、質量流量控制器等，流體地連接至一或多具有氣體來源，例如清洗氣體，之導管。在所揭露之一些實施例中，至少一氣體傳輸通道128可放置於基座108之下。舉例而言，至少一氣體傳輸通道128可放置於基座108之直接下方並也可為基座108所支撐。如圖3之非限制示範實施例所示，二氣體傳輸通道128可與每一頂桿126對應，然而，應注意者，氣體傳輸通道之任一編號可在反應腔室100中與多個頂桿中每一個做對應。舉例而言，多個頂桿126中每一個可與一或多、二或多、三或多、四或多，或甚至5個氣體傳輸通道做對應。
在所揭露之一些實施例中，至少一氣體傳輸通道可包含一或多氣體通道出口，氣體通道出口130經配置以將清洗氣體分配至反應腔室100之下層腔室104。在所揭露之一些實施例中，一或多氣體通道出口130置於鄰近於通孔132。舉例而言，多個頂桿126之每一個可具有與其對應之至少一氣體通道出口，至少一氣體通道出口130置於鄰近於相對應關聯之頂桿。在一些實施例中，至少一氣體通道出口130可置於離一相對應通孔132之一段距離，此距離小於10毫米，或小於5毫米，甚至小於1毫米。
在所揭露之一些實施例，一或多氣體通道出口130經配置以將氣體導引至頂桿。換言之，多個頂桿之每一個具有與其相對應之至少一氣體通道出口，氣體通道出口置於同時鄰近於通孔與頂桿。至少一氣體通道出口130可配置以導引氣體，例如清洗氣體，朝向一相對應之頂桿。舉例而言，參閱圖3所示，氣體傳輸通道128包含氣體通道出口130，經配置以導引一氣體(如箭頭134所指示)以一方向朝向相對應之頂桿126。
在所揭露之一些實施例中，多個頂桿中每一個包含一上層頂桿頂端126A與一下層頂桿底端126B，及一或多氣體通道出口130可經配置以導引氣體朝向每一個頂桿底端126B，也就是說，氣體通道出口經配置以導引一氣體沿著一保護下降至下層頂桿底端126B。
在所揭露之一些實施例中，至少一氣體通道出口130可與每一頂桿136對應，且至少一氣體通道出口130可加以配置以導引氣體下降於相對應頂桿126之長邊。
在所揭露之一些實施例中，反應腔室100(圖1及圖2)包含一上層腔室102與一下層腔室104，且一或多氣體通道出口130經配置以導引一氣體朝向下層腔室104，也就是說，氣體通道出口係下傾朝向下層腔室104以分配清洗氣體至下層腔室104。在一些實施例中，氣體傳輸通道128可包含氣體傳輸通道之至少一部分，此部分係傾斜朝向下至下層腔室104，以使氣體通道出口130外之清洗氣體分配朝向下層腔室104。氣體傳輸通道128與氣體通道出口130之一或兩者兼具之配置以一傾斜方向朝向下層腔室可防止任何出現於下層腔室污染物透過多個通孔向上橫越至上層腔室102。
如圖3所示，在所揭露之一些實施例中，每一頂桿126可與二或三氣體傳輸通道128相對應，每一氣體傳輸通道128包含一氣體通道出口130，配置以導引氣體朝向頂桿126.。在一些實施例中，每一頂桿與二或多個氣體傳輸通道128相對應，每一氣體傳輸通道128包含一氣體通道出口130，每一氣體通道出口係以一傾斜角朝向頂桿底端126B以導引氣體沿著頂桿126之長邊向下。
圖4係根據本發明之一實施例說明另一種頂桿清洗機構之一展開圖。圖4之頂桿清洗機構具有很多類似如圖3所示之特色，因此，為求簡明，只有在另一實施例有不同特徵才加以敘述。
如圖4所示，基座108包含通孔132與置於其中之一相對應頂桿126。然而，至少一氣體傳輸通道128同樣置於基座內，每一氣體傳輸通道128包含至少一氣體通道出口130。因此，一或多氣體傳輸通道128及他們的相對應之氣體通道出口130整合至基座108，換言之，一或多氣體傳輸通道128內通基座108。一或多氣體傳輸通道128與基座108之整合可允許氣體傳輸通道及他們相對應氣體通道出口更鄰近頂桿頂端126A，此允許清洗氣體可為導引向下於通孔132之長度並進入下層腔室104。透過通孔導引一清洗氣體直接地向下之方式可實體上地防止任何出現在下層腔室中的污染物透過通孔132向上穿過上層腔室102。在所揭露之一些實施例中，一或多整合氣體傳輸通道128可流體地連接，透過合適的氣體線路、門閥、質量流量控制器等，流體地連接至一或多具有氣體來源，例如清洗氣體，之導管。
在所揭露之實施例中，一或多氣體傳輸通道128整合至基座108可包含至少一氣體傳輸通道之至少一部份，傾斜的朝向下層腔室。舉例而言，如圖4所示，氣體傳輸通道128可包含一氣體傳輸通道128A之一部分，此部分傾斜朝向下層腔室104，以致清洗氣體從氣體通道出口130離開係導引向下沿著通孔132之長度及沿著頂桿126之長邊。
所揭露之實施例亦包含處理基板之方法。此方法可包含：提供一反應腔室，及提供一基座，基座設置於反應腔室中，係配置以支持基座上方之一基板，基座包含在該基座垂直方向上之複數個通孔。此方法亦可包含：提供複數個頂桿，複數個頂桿中每個頂桿係設置於各自之通孔中，以及提供至少一氣體傳輸通道，至少一氣體傳輸通道包含一或多個氣體通道出口，一或多個氣體通道出口係設置鄰近於複數個通孔。此方法亦可包含：透過至少一氣體傳輸通道使一氣體流動，氣體透過一或多個氣體通道出口離開氣體傳輸通道。
如圖5所示，所揭露之實施例可藉由流程圖說明，包含根據示範實施例一方法500用以在一反應腔室中處理一基板。
具體而言，方法500可以接著以處理區塊510處理，包含提供一反應腔室。在一些實施例中，反應腔室100可經配置以執行原子層沉積處理，在其他實施例中，反應腔室100可加以配置以執行化學氣相沉積處理。應當注意的是，所揭露之實施例可使用於反應腔室，配置用以大量沉積處理，包含但非限制於，有機金屬化學氣相沉積法(MOVCD)、氣體源(MBE)，及物理氣相沉積法（PVD）。所揭露之實施例也可用來經設置以處理一基板之反應腔室，以一反應性前體，可包含蝕刻程序例如，舉例而言，反應離子蝕刻(RIE)、感應耦合電漿體(ICP)，以及電子迴旋共振(ECR)。在一些實施例中，反應腔室可包含一雙重腔室，其包含上層腔室經設置以處理一或多基板，以及下層腔室經配置以從反應腔室裝載基板及從反應腔室卸除基板。
方法500可接續處理區塊520，其包含提供反應腔室中之一基座，基座經配置以支撐其上之基板，基座包含在其垂直方向上複數個通孔。在一些實施例中，基座可包含至少三通孔。
方法500接續處理區塊530，其包含提供複數個頂桿，頂桿中每個頂桿皆放置於各的通孔中。在所揭露之一些實施例中，基座可包含三頂桿放置其中，配置以使基板在上層腔室與下層腔室中上升或下降。
方法500可以處理區塊540進行接續，包含提供至少一氣體傳輸通道，此氣體傳輸通道包含一或多氣體通道出口，此一或多氣體通道出口係置於鄰近通孔。在一些實施例中，至少一氣體傳輸通道可置於基座中，換言之，氣體傳輸通道整合至基座。在一些實施例中，至少一氣體傳輸通道可置於基座之下。舉例而言，一或多傳輸通道可置於基板直接下方，同時也由基板所支撐。
方法500可繼續以處理區塊550進行，包含透過至少一氣體傳輸通道使氣體流動，氣體透過一或多氣體通道出口離開氣體傳輸通道。一或多氣體傳輸通道可透過合適的氣體線路、門閥、質量流量控制器等，流體地連接至一或多具有氣體來源，例如清洗氣體，之導管。舉例而言，清洗氣體可包含一惰性氣體，例如，而不限於，氬(Ar)、氮(N2)或氦(He)。在所揭露的一些實施例中，反應腔室包含一上層腔室與一下層腔室，且一或多氣體通道出口經配置以導引氣體朝向下層腔室，因而防止出現在下層腔室中任何污染物透過複數個通款穿越至上層腔室。在所揭露之一些實施例中，至少一氣體傳輸通道包含至少一氣體傳輸通道之一部分，傾斜的朝向下層腔室以使清洗氣體可受導引向下朝向相對應之頂桿及進入下層腔室。
在一些實施例中，流動於下層腔室中之一清洗氣體、一惰性氣體或其他氣體可以以大於在上層腔室中氣體流動壓力之一壓力加來提供，因而實體地防止在上層腔室中前體氣體之流動藉由擴散穿透至下層腔室。此外，在一些實施例中，離開至少一氣體傳輸通道之氣體可提供大於下層腔室中氣體流動所施加壓力之一壓力，使氣體從至少一氣體傳輸通道流動，可實質地防止出現在下層腔室之任何污染物透過基座中複數個通孔穿越。
上文所揭露之本發明之示範實施例並不限制本發明的範疇，此係由於此等實施例僅為本發明之實施例之示範，而係由所附申請專利範圍及其法定等效所定義。任何等效實施例意圖包含於本發明範疇之內。實際上，除本文中所示及所描述者之外，本揭示之各種修改(諸如所描述之元件的替代性適用組合)根據描述對本領域通常知識者而言將視為顯而易見。該等修改及實施例同樣意圖屬於所附申請專利範圍之範疇內。
100‧‧‧反應腔室 102‧‧‧上層腔室 104‧‧‧下層腔室 106‧‧‧介面板 108‧‧‧基座 110‧‧‧基板架設面 112‧‧‧垂直可移動式升降梯 114‧‧‧基板 116‧‧‧處理區域 118‧‧‧箭號 120‧‧‧蓮蓬頭 122‧‧‧第一封裝構件 124‧‧‧第二封裝構件 126‧‧‧頂桿 126A‧‧‧頂桿頂端 126b‧‧‧頂桿底端 1228‧‧‧氣體傳輸通道 128A‧‧‧氣體傳輸通道 130‧‧‧氣體通道出口 132‧‧‧通孔 134‧‧‧箭頭 136‧‧‧頂桿 500‧‧‧方法 510‧‧‧處理區塊 520‧‧‧處理區塊 530‧‧‧處理區塊 540‧‧‧處理區塊 550‧‧‧處理區塊
儘管本說明書已具體指出且明確主張視為本發明之實施例的申請專利範圍，然而結合隨附圖式理解時可更容易自本發明所揭示之實施例之某些實例的描述來理解本發明所揭露之實施例的特色，在隨附圖式中：
圖1係根據本發明之一實施例說明反應腔室包含一上層腔室與一下層腔室，且反應腔室配置於基板承載位置之一示意圖。
圖2係根據本發明之一實施例說明反應腔室包含一上層腔室與一下層腔室，且反應腔室配置於基板處理位置之一示意圖。
圖3係根據本發明之一實施例說明反應腔室中頂桿清洗機構之一分解立體示意圖。
圖4係根據本發明之一實施例說明反應腔室中另一種頂桿清洗機構之一分解立體示意圖。
圖5係根據本發明之一實施例說明在反應腔室中處理一基板之一流程圖。
100‧‧‧反應腔室
102‧‧‧上層腔室
104‧‧‧下層腔室
106‧‧‧介面板
108‧‧‧基座
110‧‧‧基板架設面
112‧‧‧垂直可移動式升降梯
114‧‧‧基板
116‧‧‧處理區域
120‧‧‧蓮蓬頭
122‧‧‧第一封裝構件
124‧‧‧第二封裝構件
126‧‧‧頂桿

Claims (11)

  1. 一種半導體處理裝置，包括：一反應腔室；一基座，設置於該反應腔室中，係配置以支稱該基座上方之一基板，該基座包含在該基座垂直方向上之複數個通孔；複數個頂桿，該複數個頂桿中之每一者係設置於各自之通孔；以及至少一氣體傳輸通道，其包含一或多個氣體通道出口，該一或多個氣體通道出口係設置鄰近於該複數個通孔，其中該複數個頂桿包含一上層頂桿頂端及一下層頂桿底端，且該一或多個氣體通道出口係配置以將一氣體導引至下層頂桿底端中之每一者。
  2. 如申請專利範圍第1項所述之半導體處理裝置，其中該反應腔室係配置以進行至少一原子層沉積或化學氣相沈積。
  3. 如申請專利範圍第1項所述之半導體處理裝置，其中該至少一氣體傳輸通道係設置於該基座中。
  4. 如申請專利範圍第1項所述之半導體處理裝置，其中該至少一氣體傳輸通道係設置於該基座下方。
  5. 如申請專利範圍第1項所述之半導體處理裝置，其中該一或多個氣體通道出口係配置以將氣體導引朝向該複數個頂桿。
  6. 如申請專利範圍第1項所述之半導體處理裝置，其中至少一氣體通道出口對應於每一頂桿，且該至少一氣體通道出口係配置以導引氣體沿著該頂桿之長度向下。
  7. 如申請專利範圍第1項所述之半導體處理裝置，其中至少一氣體通道出口對應於每一通孔，該至少一氣體通道出口經配置以導引氣體沿著該通孔之長度向下並進入一下層腔室。
  8. 如申請專利範圍第1項所述之半導體處理裝置，其中該反應腔室包含一上層腔室與一下層腔室，且該一或多個氣體通道出口係配置以導引一氣體至該下層腔室，來防止任何在該下層腔室中之污染物不會透過該複數個通孔而向上穿透至該上層腔室。
  9. 如申請專利範圍第1項所述之半導體處理裝置，其中該至少一氣體傳輸通道流體地連接至含有一清洗氣體來源之一或多個容器。
  10. 一種半導體處理裝置，包括：一反應腔室；一基座，設置於該反應腔室中，係配置以支稱該基座上方之一基板，該基座包含在該基座垂直方向上之複數個通孔；複數個頂桿，該複數個頂桿中之每一者係設置於各自之通孔；以及至少一氣體傳輸通道，其包含一或多個氣體通道出口，該一或多個氣體通道出口係設置鄰近於該複數個通孔，其中每一頂桿係對應於二或多個氣體傳輸通道，每一氣體傳輸通道包含一氣體通道出口，該氣體通道出口係配置以將一氣體導引朝向該頂桿。
  11. 一種半導體處理裝置，包括：一反應腔室；一基座，設置於該反應腔室中，係配置以支稱該基座上方之一基板，該基座包含在該基座垂直方向上之複數個通孔；複數個頂桿，該複數個頂桿中之每一者係設置於各自之通孔；以及至少一氣體傳輸通道，其包含一或多個氣體通道出口，該一或多個氣體通道出口係設置鄰近於該複數個通孔，其中每一頂桿係對應於二或多個氣體傳輸通道，每一氣體傳輸通道包含一氣體通道出口，該氣體通道出口係以一下傾角朝向該頂桿底端以導引氣體沿著該頂桿之長度向下。
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