KR20190104880A - 기판 처리용 반도체 처리 장치 및 방법 - Google Patents

기판 처리용 반도체 처리 장치 및 방법 Download PDF

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KR20190104880A
KR20190104880A KR1020190016138A KR20190016138A KR20190104880A KR 20190104880 A KR20190104880 A KR 20190104880A KR 1020190016138 A KR1020190016138 A KR 1020190016138A KR 20190016138 A KR20190016138 A KR 20190016138A KR 20190104880 A KR20190104880 A KR 20190104880A
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gas
susceptor
chamber
channel
gas delivery
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KR1020190016138A
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페트리 라이자넨
데이비드 마쿼트
토마스 애스워드
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에이에스엠 아이피 홀딩 비.브이.
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Publication of KR20190104880A publication Critical patent/KR20190104880A/ko

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Abstract

반도체 처리 장치가 개시된다. 장치는 반응 챔버, 반응 챔버 내에 배치되고 기판을 위에 지지하도록 구성된 서셉터를 포함하며, 서셉터는 복수의 관통홀을 서셉터의 축방향으로 포함한다. 장치는 각각의 리프트 핀이 해당 관통홀 내에 배치되는 복수의 리프트 핀, 및 관통홀에 근접하게 배치되는 하나 이상의 가스 채널 유출구를 포함하는 적어도 하나의 가스 전달 채널을 포함할 수도 있다. 반응 챔버 내에서 기판을 처리하는 방법도 개시된다.

Description

기판 처리용 반도체 처리 장치 및 방법{A SEMICONDUCTOR PROCESSING APPARATUS AND A METHOD FOR PROCESSING A SUBSTRATE}
본 개시는 일반적으로 반도체 처리 장치 및 특히 서셉터에 의해 지지되는 기판의 오염을 방지하는 기구를 포함하는 반도체 처리 장치에 관한 것이다. 본 개시는 또한 일반적으로 기판을 처리하는 방법 및 특히 처리 단계 중에 기판의 오염을 방지하는 방법에 관한 것이다.
반도체 기판 위로 다양한 물질층을 증착하기 위하여 반응 챔버가 사용될 수 있다. 예를 들어 실리콘 기판과 같은 반도체 기판은 반응 챔버 내의 서셉터 상에 위치할 수 있다. 기판 및 서셉터는 원하는 기판 온도 설정점으로 가열될 수 있다. 예시적인 기판 처리 공정에서, 하나 이상의 반응 가스는 가열된 기판 위를 지나갈 수 있어서 상기 기판 표면 상에 상기 물질의 박막 증착을 일으킨다. 후속하는 증착, 도핑, 리소그라피, 식각 및 기타 공정들 내내, 이들 층은 집적 회로 내에서 만들어진다.
반응 챔버는 일반적으로 단일 챔버 또는 듀얼 챔버로 제조된다. 듀얼 챔버 배열에서, 두 개의 챔버는 하나의 챔버가 두 번째 챔버 위의 수직으로 배향될 수 있다. 상부 챔버는 기판 처리에 활용될 수 있는 반면에, 하부 챔버는 반도체 처리 장치 내외로 기판을 로딩하고 언로딩하는 데 활용될 수 있다. 듀얼 챔버를 포함하는 반도체 처리 장치의 작동 중에, 바람직하지 않은 오염물이 하부 챔버에 축적되고/되거나 코팅하여, 챔버 세정 및/또는 상부 챔버에 배치된 기판의 원하지 않는 오염으로 인해서 원하지 않는 정지 시간이 생길 수 있다. 따라서, 상부 챔버에 배치된 기판의 오염을 방지함으로써 개선된 반도체 처리 프로토콜을 얻기 위한 장치 및 방법이 바람직하다.
본 발명의 내용은 선정된 개념을 단순화된 형태로 소개하기 위해 제공된다. 이들 개념은 하기의 본 발명의 예시적 구현예의 상세한 설명에 더 상세하게 기재되어 있다. 이러한 요약은 청구된 요지의 주된 특징 또는 필수적인 특징을 구분하려는 의도가 아니며 청구된 요지의 범주를 제한하기 위해 사용하려는 의도 또한 아니다.
일부 구현예에서, 반도체 처리 장치가 제공된다. 상기 장치는 반응 챔버, 반응 챔버 내에 배치되고 기판을 위에 지지하도록 구성된 서셉터를 포함하며, 상기 서셉터는 복수의 관통홀(through-hole)을 서셉터의 축방향으로 포함한다. 상기 장치는 각각의 리프트 핀이 해당 관통홀 내에 배치되는 복수의 리프트 핀(lift pin), 및 상기 관통홀에 근접하게 배치되는 하나 이상의 가스 채널 유출구(gas channel outlet)를 포함하는 적어도 하나의 가스 전달 채널(gas transmitting channel)을 포함할 수도 있다.
일부 구현예에서, 기판을 처리하는 방법이 제공될 수 있다. 상기 방법은 반응 챔버를 제공하는 단계, 및 상기 반응 챔버 내에 배치되고 기판을 위에 지지하도록 구성되며 복수의 관통홀을 서셉터의 축방향으로 포함하는 서셉터를 제공하는 단계를 포함할 수 있다. 상기 방법은 복수의 리프트 핀(lift pin)(상기 리프트 핀의 각각은 해당 관통홀 내에 배치됨)을 제공하는 단계 및 상기 관통홀에 근접하게 배치되는 하나 이상의 가스 채널 유출구(gas channel outlet)를 포함하는 적어도 하나의 가스 전달 채널(gas transmitting channel)을 제공하는 단계를 포함할 수도 있다. 상기 방법은 상기 적어도 하나의 가스 전달 채널을 통해 가스(상기 가스는 상기 하나 이상의 가스 유출구를 통해 상기 가스 전달 채널을 빠져나옴)를 유동시키는 단계를 포함할 수도 있다.
본 발명 및 선행 기술에 대하여 달성되는 장점들을 요약하기 위한 목적으로, 본 발명의 특정 목적 및 장점들이 본원에 기술되었다. 물론, 모든 목적 및 장점들이 본 발명의 임의의 특별한 구현예에 따라 반드시 달성되는 것이 아니라는 것을 이해하여야 한다. 따라서, 예들 들어 당업자는, 본 발명이, 본원에 교시 또는 제안될 수 있는 다른 목적들 또는 장점들을 반드시 달성하지 않고서, 본원에 교시되거나 제시된 바와 같은 하나의 장점 또는 여러 장점들을 달성 또는 최적화 하는 방식으로 구현되거나 수행될 수 있다는 것을 인식할 것이다.
이들 구현예 모두 본원에 개시된 본 발명의 범주 내에 있도록 의도된다. 이들 및 다른 구현예들은 첨부된 도면들을 참조하는 특정 구현예들의 다음의 상세한 설명으로부터 당업자에게 쉽게 분명하게 될 것이고, 본 발명은 개시된 임의의 특정 구현예(들)에 한정되지 않는다.
본 명세서는 본 발명의 구현예로 간주되는 것을 특별히 지적하고 명백하게 주장하는 청구범위로 결론을 내지만, 본 개시의 구현예들의 장점들은 첨부한 도면들과 관련하여 읽을 때 본 개시의 구현예들의 특정 예의 설명으로부터 더욱 쉽게 확인될 수 있고, 도면들 중:
도 1은 기판 로딩 위치에서 구성되는 반응 챔버로, 상부 챔버 및 하부 챔버를 포함하는 예시적인 반응 챔버의 개략적인 다이어그램이다.
도 2는 기판 처리 위치에서 구성되는 반응 챔버로, 상부 챔버 및 하부 챔버를 포함하는 예시적인 반응 챔버의 개략적인 다이어그램이다.
도 3은 본 개시의 구현예에 따라 리프트 핀 퍼지 기구를 도시하는 예시적인 반응 챔버의 개략적인 분해도이다.
도 4는 본 개시의 구현예에 따라 추가적인 리프트 핀 퍼지 기구를 도시하는 예시적인 반응 챔버의 개략적인 분해도이다.
도 5는 본 개시의 예시적인 구현예에 따라 반응 챔버 내의 기판을 처리하는 공정 흐름도를 도시한다.
특정 구현예 및 실시예가 아래에 개시되었지만, 당업자는 본 발명이 구체적으로 개시된 구현예 및/또는 본 발명의 용도 및 이들의 명백한 변형 및 등가물 너머로 연장된다는 것을 이해할 것이다. 따라서, 개시된 발명의 범주는 후술되는 구체적인 개시된 구현예에 의해 제한되지 않도록 의도된다.
본원에 제시된 예시는 임의의 특정한 물질, 장치, 구조, 또는 소자의 실제 뷰를 의도하려 하는 것은 아니며, 단지 본 개시의 구현예를 설명하기 위해 사용되는 이상화된 표현이다.
본원에서 사용되는 바와 같이, 용어 "기판(substrate)"은, 사용될 수 있는, 또는 그 위에 소자, 회로, 또는 막이 형성될 수 있는, 임의의 하부 재료 또는 재료들을 지칭할 수 있다.
본원에서 사용되는 바와 같이, 용어 "원자층 증착"(ALD)은 증착 사이클, 바람직하게는, 복수의 연속 증착 사이클이 공정 챔버에서 수행되는 기상 증착 공정을 지칭할 수 있다. 일반적으로, 각각의 사이클 중에 전구체는 증착 표면(예, 기판 표면, 또는 이전 ALD 주기로부터의 물질과 같은 이전에 증착된 하부 표면)에 화학 흡착되고, 추가적인 전구체와 쉽게 반응하지 않는(즉, 자기 제한적 반응) 단층 또는 서브 단층을 형성한다. 그 후 필요한 경우, 증착 표면 상에서 화학 흡착된 전구체를 원하는 재료로 전환시키는 용도로, 반응물(예, 다른 전구체 또는 반응 가스)이 후속해서 공정 챔버에 유입될 수 있다. 일반적으로, 이러한 반응물은 전구체와 더 반응할 수 있다. 각각의 사이클 중에 공정 챔버로부터 과잉의 전구체를 제거하고/하거나, 화학 흡착된 전구체의 변환 후 공정 챔버로부터 과잉의 반응물 및/또는 반응 부산물을 제거하기 위해 퍼지(purging) 단계들이 더 활용될 수도 있다. 추가로, 본원에서 사용된 용어 "원자층 증착"은 "화학적 증기 원자층 증착", "원자층 에피택시(atomic layer epitaxy)"(ALE), 분자 빔 에피택시(molecular beam epitaxy)(MBE), 가스 공급원 MBE, 또는 유기금속 MBE, 및 전구체 조성물(들), 반응 가스, 및 퍼지(예를 들면, 불활성 캐리어) 가스의 교번 펄스(alternating pulses)로 수행되는 경우의 화학적 빔 에피택시와 같은 관련 용어들에 의해 지정된 공정을 포함하는 것을 또한 의미한다.
본원에서 사용되는 바와 같이, 용어 "화학 기상 증착(chemical vapor deposition)"은 원하는 증착을 생성시키기 위해 기판의 표면 상에서 반응 및/또는 분해되는 하나 이상의 휘발성 전구체에 기판이 노출되는 임의의 공정을 지칭할 수 있다.
본원에 사용된 바와 같이, 용어 "막(film)" 및 "박막(thin film)"은 본원에 개시된 방법에 의해 증착된 임의의 연속적인 또는 비연속적인 구조 및 재료를 지칭할 수 있다. 예컨대, "막" 및 "박막"은 2D 재료, 나노막대, 나노튜브 또는 나노입자 또는 심지어는 부분 또는 전체 분자층 또는 부분 또는 전체 원자층 또는 원자 및/또는 분자 클러스터를 포함할 수 있다. "막" 및 "박막"은 핀홀을 포함하는 재료 또는 층을 포함할 수 있지만 여전히 적어도 부분적으로 연속적일 수 있다.
본원에서 사용되는 바와 같이, 용어 "오염물(contaminant)"은 반응 챔버에 배치된 기판의 순도에 영향을 끼칠 수 있는, 반응 챔버 내에 배치된 원하지 않는 임의의 물질을 지칭할 수 있다. "오염물"이라는 용어는, 반응 챔버 내에 배치된 불필요한 증착물, 금속 및 비금속 입자, 불순물 및 폐기물을 지칭할 수 있으나, 이에 제한되지 않는다.
본 개시의 구현예는 반도체 처리 장치 내의 기판을 처리하기 위해 활용될 수 있는 반도체 처리 장치 및 방법을 포함할 수 있다. 반도체 처리 장치는 듀얼 챔버 모듈을 포함할 수 있으며, 상부 챔버는 하나 이상의 기판을 처리하도록 구성되고 하부 챔버는 하나 이상의 기판을 상기 반도체 처리 장치 내외로 로딩 및 언로딩하도록 구성된다.
본 개시의 일부 구현예에서, 상부 챔버 및 하부 챔버는 하나 이상의 밀폐 부재를 사용하여 실질적으로 서로 격리될 수 있다. 상부 챔버를 하부 챔버로부터 밀폐하는 것은, 기판 처리에 활용되는 전구체 가스를 장치의 하부 챔버에 접촉시키는 것을 방지하기 위해 바람직할 수 있다. 예를 들어, 상부 챔버에서 기판을 처리하기 위해 활용되는 전구체 가스는 하부 챔버와 접촉할 수 있는 부식성 증착 전구체를 포함할 수 있으며, 원하지 않는 증착물/오염물/입자를 생성하여 상부 챔버 내로 재유입될 수 있음으로써, 상부 챔버에 배치된 기판에 오염원을 제공한다.
일부 구현예에서, 제1 밀폐 부재는 상부 챔버 내에 배치된 서셉터의 주변에 위치할 수 있고, 제2 밀폐 부재는 상부 챔버와 하부 챔버 사이에 위치할 수 있으며, 제1 및 제2 밀폐 부재는 선택적으로 서로 체결되어 상부 챔버와 하부 챔버 사이의 연통을 제한한다. 비록 밀폐 부재가 상부 챔버와 하부 챔버 사이의 유체 연통을 실질적으로 방지할 수 있지만, 작은 부피의 전구체 가스가 밀폐 부재를 통한 확산에 의해서 하부 챔버로 유입할　가능성이 여전히 있을 수 있어서,　반도체 처리 장치용 반응 챔버의 하부 챔버 내에 잠재적인 부식, 원하지 않는 증착,　및 오염물을 생성한다.
상부 챔버와 하부 챔버 사이의 유체 연통을 실질적으로 방지하는 밀폐 부재 외에도, 공정 파라미터가 또한 활용될 수 있어서 반도체 처리 장치의 하부 챔버를 접촉시키는 것으로부터의 원하지 않는 전구체　가스를 감소시킨다. 예를 들어, 일부 구현예에서 하부 챔버 내의 퍼지, 불활성 가스 또는 다른 가스 유동은 상부 챔버 내의 가스 유동 압력보다 큰 압력으로 제공됨으로써, 실질적으로 상부 챔버 내의 전구체 가스 유동이 하부 챔버로 확산하는 것을 실질적으로 방지한다.
하부 챔버와 상부 챔버 사이의 기판 이송은 리프트 핀의 상용을 통해 달성될 수 있다. 예를 들어, 처리 중에 기판이 배치될 수 있는 서셉터는 복수의 관통홀을 포함할 수 있다. 각각의 관통홀은 하부 챔버와 상부 챔버 사이의 수직 평면에서 횡단할 수 있는 관련 리프트 핀을 가질 수 있다. 예를 들어, 일부 구현예에서 반도체 처리 장치는 하부 챔버와 상부 챔버 사이에서 기판을 상승 및 하강시키기 위해 수직면에서 상하로 일제히 이동할 수 있는 해당 3개의 리프트 핀을 갖는 3개의 관통홀을 포함하는 서셉터를 포함할 수 있다. 비록 관통홀은 리프트 핀을 수용하고 기판 이송을 용이하게 하는 것이 바람직하지만, 관통홀은 또한 상부 챔버와 하부 챔버 사이의 원하지 않는 유체 연통 경로를 나타낼 수 있다. 예를 들어, 하부 챔버 내에 배치된 임의의 원하지 않는 오염물이 관통홀에 축적되어 서셉터에 의해 지지되는 기판의 후면 오염을 생성할 수 있다. 오염 과정은 상부 챔버와 비교하여 하부 챔버에 일반적으로 존재하는 증가된 압력(오염물을 상향으로 유도함)에 의해 더욱 악화될 수 있으며, 오염물은 관통홀을 가로지르며 상부 챔버, 및 서셉터에 의해 지지되는 기판 후면을 오염시킬 수 있다.
따라서, 하부 챔버에 존재하는 오염물이 서셉터 내에 존재하는 복수의 관통홀을 가로지르고 이어서 상부 챔버를 오염시키고 특히 서셉터에 의해 지지되는 기판 후면을 오염시키는 것을 방지하기 위한 장치 및 방법이 바람직하다. 이러한 오염 문제를 해결하기 위해, 본 개시의 구현예는 복수의 관통홀에에 근접한 퍼지 가스를 제공하는 시스템 및 방법을 포함하며, 상기 퍼지 가스는 복수의 관통홀 내 및 그 주위에 오염물이 축적되는 것을 실질적으로 방지하고, 임의의 원하지 않는 오염물이 복수의 관통홀을 가로지르며 상부 챔버 및 특히 기판 후면과 접촉하는 것을 실질적으로 방지하는 보호 가스 커튼을 제공한다. 따라서, 본 개시의 구현예는 관통홀 및 그와 관련된 리프트 핀에 근접하게 배치된 하나 이상의 가스 유출구를 포함하는 가스 전달 채널을 제공한다. 퍼지 가스는 하나 이상의 가스 전달 채널을 통해 유동하고 관통홀에 근접한 하나 이상의 가스 배출구에서 배출될 수 있음으로써, 상부 챔버에서의 오염 문제 및 특히 기판 후면의 오염을 실질적으로 방지한다.
따라서, 본 개시의 구현예는 반응 챔버, 상기 반응 챔버 내에 배치되고 기판을 위에 지지하도록 구성되며 복수의 관통홀을 서셉터의 축방향으로 포함하는 서셉터를 포함하는 반도체 처리 장치를 제공할 수 있다. 상기 장치는 각각의 리프트 핀이 해당 관통홀 내에 배치되는 복수의 리프트 핀, 및 상기 관통홀에 근접하게 배치되는 하나 이상의 가스 채널 유출구를 포함하는 적어도 하나의 가스 전달 채널을 포함할 수도 있다.
본 개시의 구현예는 도 1 및 도 2를 참조하여 도시될 수 있고, 본 개시의 구현예를 통합할 수 있는 예시적인 반응 챔버(100)를 도시한다. 본 개시의 일부 구현예에서, 반응 챔버(100)는 원자층 증착 공정을 수행하도록 구성될 수 있는 반면에, 다른 구현예에서는 반응 챔버(100)가 화학 기상 증착 공정을 수행하도록 구성될 수 있다. 보다 상세하게, 도 1 및 도 2는 로딩/언로딩 위치(도 1) 및 처리 위치(도 2)에 있는 반응 챔버(100)의 단면도를 도시한다. 반응 챔버(100)는 인터페이스 플레이트(106)에 의해 분리될 수 있는 상부 챔버(102) 및 하부 챔버(104)를 포함할 수 있다. 일반적으로 공정 처리는 상부 챔버(102) 내에서 발생하고, 기판 로딩 및 언로딩은 하부 챔버(104) 내에서 발생한다. 서셉터(108)는 기판 장착 표면(110)을 포함하고, 기판 로딩 위치와 기판 처리 위치 사이에서 서셉터를 변위시키기 위해 수직으로 이동 가능한 엘리베이터(112)에 연결된다. 기판(114)은 기판 장착 표면(110) 상에 위치할 수 있고, 도 2에 도시된 바와 같이 서셉터 (108)가 화살표(118)의 방향으로 상향 이동될 때에 처리 영역의 상부 표면을 한정하는 샤워 헤드(120)와 함께 처리 영역(116)에 위치할 수 있다. 본 개시의 일부 구현예에서, 제1 밀폐 부재(122)는 서셉터(108) 상에 배치될 수 있고, 제2 밀폐 부재(124)는 상부 챔버(102)와 하부 챔버(104) 사이에 위치할 수 있다. 일부 구현예에서, 제2 밀폐 부재(124)는 인터페이스 플레이트(106) 상에 적어도 부분적으로 놓이도록 배치될 수 있거나, 인터페이스 플레이트 또는 반응 챔버(100)의 임의의 다른 적절한 부위에 연결될 수 있다. 반응 챔버(100)는 예시적인 리프트 핀(126)과 같은 복수의 리프트 핀(126), 그리고 반응 챔버(100) 부위의 확대도에 보다 구체적으로 상세히 나타난 관련 피처를 포함할 수도 있고, 본 개시의 리프트 핀 퍼지 장치의 예시적인 구현예를 도시하는 도 3 및 도 4에 도시된다.
도 3은 본 개시의 구현예에 따른 리프트 핀 퍼지 기구의 확대도를 도시한다. 본 개시의 일부 구현예에서, 리프트 핀(126)은 리프트 핀 헤드(126a) 및 리프트 핀 베이스(126b)를 포함하며, 리프트 핀(126)은 서셉터(108) 내에 축 방향으로 배치된 관통홀(132)에 배치된다. 처리 위치에 위치한 기판(114)은 서셉터(108) 위에 배치되고, 리프트 핀 헤드(126a)와 접촉한다. 상부 챔버(102) 내 샤워 헤드(120)의 하부 표면에 의해 한정되는 처리 영역(116) 상부 범위는, 기판(114) 바로 위에 배치된다. 도 3의 예시적인 리프트 핀 퍼지 기구는 퍼지 가스와 같은 가스를 하부 챔버(104) 내로 유동시키도록 구성될 수 있는 적어도 하나의 가스 전달 채널(128)을 포함할 수도 있다. 일부 구현예에서, 적어도 하나의 가스 전달 채널(128)은 적절한 가스 라인, 밸브, 질량 흐름 제어기 등을 통해 퍼지 가스와 같은 가스 공급원을 포함하는 하나 이상의 용기에 유체 연결될 수 있다. 본 개시의 일부 구현예에서, 상기 적어도 하나의 가스 전달 채널(128)은 서셉터(108) 밑에 배치될 수 있다. 예를 들어, 상기 적어도 하나의 가스 전달 채널(128)은 서셉터(108) 바로 밑에 배치될 수 있고 또한 서셉터(108)에 의해 지지될 수도 있다. 도 3의 비제한적이고 예시적인 구현예에 의해 도시된 바와 같이, 2개의 가스 전달 채널(128)이 각각의 리프트 핀(126)과 결합될 수 있지만, 반응 챔버(100) 내의 복수의 리프트 핀 각각에 임의의 수로 가스 전달 채널이 결합될 수 있음을 주목해야 한다. 예를 들어, 복수의 리프트 핀(126) 각각은 하나 이상의, 2개 이상, 3개 이상, 4개 이상 또는 심지어 5개 이상의 가스 전달 채널과 결합될 수 있다.
본 개시의 일부 구현예에서, 상기 적어도 하나의 가스 전달 채널은 반응 챔버(100)의 하부 챔버(104) 내로 퍼지 가스를 분배하도록 구성된 하나 이상의 가스 채널 유출구(130)를 포함할 수 있다. 본 개시의 일부 구현예에서 하나 이상의 가스 채널 유출구(130)는 관통홀(132)에 근접하여 배치된다. 예를 들어, 복수의 리프트 핀(126) 각각은 이와 결합된 적어도 하나의 가스 채널 유출구를 가질 수 있고, 상기 적어도 하나의 가스 채널 유출구(130)는 관련된 리프트 핀에 근접하여 배치된다. 일부 구현예에서, 상기 적어도 하나의 가스 채널 유출구(130)는 10 밀리미터 미만, 또는 5 밀리미터 미만, 또는 심지어 1 밀리미터 미만의 거리로 관련 관통홀(132)로부터 배치될 수 있다.
본 개시의 일부 구현예에서, 상기 하나 이상의 가스 채널 유출구(130)는 가스를 리프트 핀쪽으로 지향시키도록 구성된다. 즉 복수의 리프트 핀 각각은 그것과 결합된 적어도 하나의 가스 채널 유출구를 가지며, 가스 채널 유출구는 관통홀 및 리프트 핀에 근접하여 배치된다. 상기 적어도 하나의 가스 채널 유출구(130)는 예를 들어 퍼지 가스와 같은 가스를 관련 리프트 핀쪽으로 지향시키도록 구성될 수 있다. 예를 들어 도 3을 참조하면, 가스 전달 채널(128)은 관련 리프트 핀(126)쪽 방향으로 가스(화살표(134)로 표시됨)를 지향시키도록 구성된 가스 채널 유출구(130)를 포함한다.
본 개시의 일부 구현예에서, 복수의 리프트 핀 각각은 상부 리프트 핀 헤드 (126a) 및 하부 리프트 핀 베이스(126b)를 포함하고, 상기 하나 이상의 가스 채널 유출구(130)는 리프트 핀 베이스(126b) 각각을 지향하도록, 즉 가스 채널 유출구가 하부 리프트 핀 베이스(126b) 쪽으로 기울어진 보호부를 따라 가스를 지향시키도록 구성된다.
본 개시의 일부 구현예에서, 적어도 하나의 가스 채널 유출구(130)는 각각의 리프트 핀(136)과 결합될 수 있고, 상기 적어도 하나의 가스 채널 유출구(130)는 관련 리프트 핀(126)의 길이 아래로 가스를 지향시키도록 구성될 수 있다.
본 개시의 일부 구현예에서, 반응 챔버(100)(도 1 및 도 2)는 상부 챔버(102) 및 하부 챔버(104)를 포함하고, 하나 이상의 가스 채널 유출구(130)는 가스를 하부 챔버(104)쪽으로 지향시키도록 구성되고 즉, 가스 채널 유출구는 하부 챔버(104)쪽으로 퍼지 가스를 분배하기 위해 하부 챔버(104)를 향해 기울어진다. 일부 구현예에서, 가스 전달 채널(128)은 하부 챔버(104)쪽으로 하향으로 기울어질 수 있는 가스 전달 채널의 적어도 일부분을 포함할 수 있음으로써, 가스 채널 유출구(130)로부터 퍼지 가스를 하부 챔버(104) 쪽으로 분배할 수 있게 한다. 가스 전달 채널(128) 및 가스 채널 유출구(130) 중 하나 또는 모두를 하부 챔버쪽으로 기울어진 방향으로 배열하면, 하부 챔버에 존재하는 임의의 오염물이 복수의 관통홀을 통해 상부 챔버(102)쪽으로 상향 횡단하는 것을 방지할 수 있다.
본 개시의 일부 구현예 및 도 3에 도시된 바와 같이, 각각의 리프트 핀(126)은 2개 이상의 가스 전달 채널(128)과 결합될 수 있으며, 각각의 가스 전달 채널(128)은 리프트 핀(126)쪽으로 가스를 지향시키도록 구성된 가스 채널 유출구(130)를 포함한다. 일부 구현예에서, 각각의 리프트 핀은 2개 이상의 가스 전달 채널(128)과 결합되며, 각각의 가스 전달 채널(128)은 가스 채널 유출구(130)을 포함하고, 각각의 가스 채널 유출구는 리프트 핀 베이스(126b)쪽으로 기울어진 각도로 리프트 핀(126)의 길이를 따라 하향으로 가스를 지향시킨다.
도 4는 본 개시의 구현예에 따른 추가적인 예시의 리프트 핀 퍼지 기구의 확대도를 도시한다. 도 4의 리프트 핀 퍼지 기구는 도 3에 도시되고 설명된 것들과 유사한 특징부를 가져서, 간결성을 위해 추가 구현예의 상이한 특징부만 설명된다.
도 4에 도시되는 바와 같이, 서셉터(108)는 그 안에 배치된 관련 리프트 핀(126)을 갖는 관통홀(132)을 포함한다. 그러나, 적어도 하나의 가스 채널 유출구(130)를 각각 포함하는 적어도 하나의 가스 전달 채널(128)이 서셉터 내에도 배치된다. 따라서, 하나 이상의 가스 전달 채널(128) 및 이들 관련 가스 채널 유출구(130)는 서셉터(108)에 일체형, 즉 하나 이상의 가스 전달 채널(128)은 서셉터(108) 내부에 있다. 서셉터(108) 내에 하나 이상의 가스 전달 채널(128)을 일체화하는 것은, 가스 전달 채널 및 그와 관련된 가스 채널 유출구가 리프트 핀 헤드(126a)에 더 근접하게 하여 퍼지 가스가 관통홀(132)의 길이 아래로 그리고 반응 챔버(104) 안으로 지향시킨다. 관통홀을 통해 아래로 바로 퍼지 가스를 지향시키는 능력은, 하부 챔버에 존재하는 임의의 오염물이 관통홀(132)을 통해 상부 챔버(102)쪽으로 상향 횡단하는 것을 실질적으로 방지할 수 있다. 본 개시의 일부 구현예에서, 하나 이상의 일체형 가스 전달 채널(128)은 적절한 가스 라인, 밸브, 질량 흐름 제어기 등을 통해 퍼지 가스와 같은 가스 공급원을 포함하는 하나 이상의 용기에 유체 연결될 수 있다.
본 개시의 일부 구현예에서, 서셉터(108)안에 일체화된 하나 이상의 가스 전달 채널(128)은 하부 챔버쪽으로 기울어진 가스 전달 채널의 적어도 일부분을 포함할 수 있다. 예를 들어, 도 4에 도시된 가스 전달 채널(128)은 하부 챔버(104)쪽으로 기울어진 가스 전달 채널 부위(128a)를 포함할 수 있어서, 가스 채널 유출구(130)로부터 배출되는 퍼지 가스가 관통홀(132) 및 리프트 핀(126)의 길이를 따라 하향으로 지향되도록 한다.
본 개시의 구현예는 기판을 처리하는 방법을 포함할 수도 있다. 본 개시의 방법은 반응 챔버를 제공하는 단계, 상기 반응 챔버 내에 배치되고 기판을 위에 지지하도록 구성되며 복수의 관통홀을 서셉터의 축방향으로 포함하는 서셉터를 제공하는 단계를 포함할 수 있다. 상기 방법은 각각의 리프트 핀이 해당 관통홀 내에 배치되는 복수의 리프트 핀을 제공하는 단계 및 상기 관통홀에 근접하게 배치되는 하나 이상의 가스 채널 유출구를 포함하는 적어도 하나의 가스 전달 채널을 제공하는 단계를 포함할 수도 있다. 상기 방법은 상기 적어도 하나의 가스 전달 채널을 통해 가스(상기 가스는 상기 하나 이상의 가스 유출구를 통해 상기 가스 전달 채널을 빠져나옴)를 유동시키는 단계를 포함할 수도 있다.
본 개시의 구현예는 도 5에 도시된 공정 흐름에 의해 도시될 수 있고, 본 개시의 예시적인 구현예에 따라 반응 챔버 내의 기판을 처리하기 위한 방법(500)을 포함한다.
보다 상세하게, 방법(500)은 반응 챔버를 제공하는 단계를 포함하는 공정 블록(510)으로 진행할 수 있다. 일부 구현예에서, 반응 챔버는 원자층 증착 공정을 위해 구성될 수 있는 반면에, 대안적인 구현예에서는 반응 챔버가 화학 기상 증착 공정을 위해 구성될 수 있다. 본 개시의 구현예는 유기 화학 기상 증착(MOCVD), 분자 빔 에피탁시(MBE) 및 물리 기상 증착(PVD)를 포함하나 이에 제한되지 않는 다수의 증착 공정을 위해 구성된 반응 챔버에서 활용될 수 있음을 이해해야 한다. 본 개시의 구현예는 반응성 전구체로 기판을 처리하도록 구성된 반응 챔버에서 활용될 수도 있으며,　예를 들어 반응성 이온 에칭(RIE), 유도 결합 플라즈마 에칭(ICP) 및 전자 싸이클로트론 공명 에칭(ECR)과 같은 에칭 공정을 포함할 수도 있다. 일부 구현예에서, 반응 챔버는 하나 이상의 기판을 처리하도록 구성된 상부 챔버 및 반응 챔버로부터 기판을 로딩 및 언로딩하도록 구성된 하부 챔버를 포함하는 듀얼 챔버를 포함할 수 있다.
방법(500)은 반응 챔버 내에서 기판을 위에 지지하도록 구성되며 복수의 관통홀을 서셉터의 축방향으로 포함하는 서셉터를 제공하는 단계를 포함하는 공정 블록(520)으로 계속할 수 있다. 일부 구현예에서, 서셉터는 적어도 3개의 관통홀을 포함할 수 있다.
방법(500)은 각각의 리프트 핀이 해당 관통홀 안에 배치되는 복수의 리프트 핀을 제공하는 단계를 포함하는 공정 블록(530)으로 계속할 수 있다. 본 개시의 일부 구현예에서의 서셉터는, 그 안에 배치되고 상부 챔버와 하부 챔버 사이에서 기판을 상승 또는 하강하기 위하여 구성된 3개의 리프트 핀을 포함할 수 있다.
방법(500)은 하나 이상의 가스 채널 유출구(상기 하나 이상의 가스 채널 유출구는 상기 관통홀에 근접하게 배치됨)를 포함하는 적어도 하나의 가스 전달 채널을 제공하는 단계를 포함하는 공정 블록(540)으로 계속할 수 있다. 일부 구현예에서, 적어도 하나의 가스 전달 채널은 서셉터 내에 배치될 수 있고 즉, 가스 전달 채널은 서셉터와 일체형이다. 일부 구현예에서, 상기 적어도 하나의 가스 전달 채널은 서셉터 밑에 배치될 수 있다. 예를 들어, 상기 적어도 하나의 가스 전달 채널은 서셉터 바로 밑에 배치될 수 있고 서셉터에 의해 지지될 수도 있다.
방법(500)은 상기 적어도 하나의 가스 전달 채널을 통해 가스(상기 가스는 상기 하나 이상의 가스 유출구를 통해 상기 가스 전달 채널을 빠져나옴)를 유동시키는 단계를 포함하는 공정 블록(550)으로 계속할 수 있다. 하나 이상의 가스 전달 채널은 적절한 가스 라인, 밸브, 질량 흐름 제어기 등을 통해 퍼지 가스와 같은 가스 공급원을 포함하는 하나 이상의 용기에 유체 연결될 수 있다. 예를 들어 퍼지 가스는 제한 없이 아르곤(Ar), 질소(N2), 또는 헬륨(He)과 같은 불활성 가스를 포함할 수 있다. 본 개시의 일부 구현예에서, 반응 챔버는 상부 챔버 및 하부 챔버를 포함하고 하나 이상의 가스 채널 유출구는 가스를 하부 챔버쪽으로 지향시키도록 구성됨으로써, 하부 챔버에 존재하는 임의의 오염물이 복수의 관통홀을 통해 상부 챔버쪽으로 상향 횡단하는 것을 방지한다. 본 개시의 일부 구현예에서, 적어도 하나의 가스 전달 채널은 하부 챔버쪽으로 기울어지는 가스 전달 채널의 적어도 일부분을 포함하여 퍼지 가스가 관련 리프트 핀 쪽으로 하향으로 그리고 하부 챔버 안으로 지향될 수 있도록 한다.
일부 구현예에서 하부 챔버 내의 퍼지, 불활성 가스 또는 다른 가스 유동은 상부 챔버 내의 가스 유동 압력보다 큰 압력으로 제공됨으로써, 실질적으로 상부 챔버 내의 전구체 가스 유동이 하부 챔버로 확산하는 것을 실질적으로 방지한다. 또한 일부 구현예에서, 적어도 하나의 가스 전달 채널로부터 배출되는 가스는 하부 챔버 내에서 가스 유동에 의해 가해지는 압력보다 큰 압력을 제공할 수 있어서, 적어도 하나의 가스 전달 채널로부터의 가스 유동은 실질적으로 하부 챔버에 존재하는 임의의 오염물이 서셉터 내에 배치된 복수의 관통홀을 횡단하는 것을 방지한다.
위에 설명된 본 개시의 예시적 구현예는 본 발명의 구현예의 예시일 뿐이기 때문에 이들 구현예는 첨부된 청구범위 및 그의 법적 등가물에 의해 정의되는 본 발명의 범주를 제한하지 않는다. 임의의 등가적인 구현예는 본 발명의 범주 내에 있도록 의도된다. 확실하게 본원에 도시되고 기재된 것 외에도, 기재된 요소들의 선택적인 유용한 조합과 같은 본 발명의 다양한 변경은 설명으로부터 당업자에게 분명할 수 있다. 이러한 변경 및 구현예도 첨부된 청구범위의 범주 내에 있는 것으로 의도된다.

Claims (18)

  1. 반도체 처리 장치로서,
    반응 챔버;
    상기 반응 챔버 내에 배치되고 기판을 위에 지지하도록 구성되며 복수의 관통홀을 서셉터의 축방향으로 포함하는 서셉터;
    각각의 리프트 핀이 해당 관통홀 내에 배치되는 복수의 리프트 핀; 및
    상기 관통홀에 근접하게 배치되는 하나 이상의 가스 채널 유출구를 포함하는 적어도 하나의 가스 전달 채널을 포함하는 장치.
  2. 제1항에 있어서, 상기 반응 챔버는 원자층 증착 또는 화학 기상 증착 중 적어도 하나를 위해 구성되는 장치.
  3. 제1항에 있어서, 상기 적어도 하나의 가스 전달 채널은 상기 서셉터 내에 배치되는 장치.
  4. 제1항에 있어서, 상기 적어도 하나의 가스 전달 채널은 상기 서셉터 밑에 배치되는 장치.
  5. 제1항에 있어서, 상기 하나 이상의 가스 채널 유출구는 가스를 상기 리프트 핀쪽으로 지향시키도록 구성되는 장치.
  6. 제1항에 있어서, 상기 복수의 리프트 핀은 상부 리프트 핀 헤드와 하부 리프트 핀 베이스를 포함하고, 상기 하나 이상의 가스 채널 유출구는 가스를 상기 리프트 핀 베이스쪽으로 각각 지향시키도록 구성되는 장치.
  7. 제1항에 있어서, 상기 리프트 핀 각각은 2개 이상의 가스 전달 채널과 결합되고, 상기 가스 전달 채널 각각은 가스를 상기 리프트 핀쪽으로 지향시키기 위해 구성되는 가스 채널 유출구를 포함하는 장치.
  8. 제1항에 있어서, 상기 리프트 핀 각각은 2개 이상의 가스 전달 채널과 결합되고, 상기 가스 전달 채널 각각은 가스 채널 유출구를 포함하며, 상기 가스 채널 유출구 각각은 상기 리프트 핀 베이스쪽으로 기울어진 각도로 상기 리프트 핀의 길이를 따라 하향으로 가스를 지향시키는 장치.
  9. 제1항에 있어서, 상기 적어도 하나의 가스 채널 유출구는 상기 리프트 핀 각각과 결합되고 가스를 상기 리프트 핀의 길이 아래로 지향시키도록 구성되는 장치.
  10. 제1항에 있어서, 상기 적어도 하나의 가스 채널 유출구는 상기 관통홀 각각과 결합되고 가스를 상기 관통홀의 길이 아래로 그리고 하부 챔버 내로 지향시키도록 구성되는 장치.
  11. 제1항에 있어서, 상기 반응 챔버는 상부 챔버 및 하부 챔버를 포함하고 상기 하나 이상의 가스 채널 유출구는 가스를 상기 하부 챔버쪽으로 지향시키도록 구성됨으로써, 상기 하부 챔버에 존재하는 임의의 오염물이 상기 복수의 관통홀을 통해 상기 상부 챔버쪽으로 상향 횡단하는 것을 방지하는 장치.
  12. 제1항에 있어서, 상기 적어도 하나의 가스 전달 채널은 퍼지 가스 공급원을 포함하는 하나 이상의 용기에 유체 연결되는 장치.
  13. 기판을 처리하는 방법으로서,
    반응 챔버를 제공하는 단계;
    상기 반응 챔버 내에 배치되고 기판을 위에 지지하도록 구성되며 복수의 관통홀을 서셉터의 축방향으로 포함하는 서셉터를 제공하는 단계;
    각각의 리프트 핀이 해당 관통홀 내에 배치되는 복수의 리프트 핀을 제공하는 단계;
    상기 관통홀에 근접하게 배치되는 하나 이상의 가스 채널 유출구를 포함하는 적어도 하나의 가스 전달 채널을 제공하는 단계; 및
    상기 적어도 하나의 가스 전달 채널을 통해 가스를 유동시키고, 상기 가스는 상기 하나 이상의 가스 유출구를 통해 상기 가스 전달 채널을 빠져나오는 단계를 포함하는 방법.
  14. 제13항에 있어서, 상기 반응 챔버는 원자층 증착 또는 화학 기상 증착 중 적어도 하나를 위해 구성되는 방법.
  15. 제13항에 있어서, 상기 적어도 하나의 가스 전달 채널은 상기 서셉터 내에 배치되는 방법.
  16. 제13항에 있어서, 상기 적어도 하나의 가스 전달 채널은 상기 서셉터 밑에 배치되는 방법.
  17. 제13항에 있어서, 상기 적어도 하나의 가스 전달 채널은 퍼지 가스 공급원을 포함하는 하나 이상의 용기에 유체 연결되는 방법.
  18. 제13항에 있어서, 상기 반응 챔버는 상부 챔버 및 하부 챔버를 포함하고 상기 하나 이상의 가스 채널 유출구는 상기 가스를 상기 하부 챔버쪽으로 지향시키도록 구성됨으로써, 상기 하부 챔버에 존재하는 임의의 오염물이 상기 복수의 관통홀을 통해 상기 상부 챔버쪽으로 상향 횡단하는 것을 방지하는 방법.
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