JP2023036721A - 基板処理装置及び方法 - Google Patents
基板処理装置及び方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 123
- 238000012545 processing Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims description 24
- 238000006243 chemical reaction Methods 0.000 claims abstract description 72
- 238000011068 loading method Methods 0.000 claims abstract description 47
- 230000033001 locomotion Effects 0.000 claims abstract description 19
- 238000006557 surface reaction Methods 0.000 claims description 10
- 230000003028 elevating effect Effects 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 description 25
- 238000000151 deposition Methods 0.000 description 11
- 230000008021 deposition Effects 0.000 description 11
- 239000002243 precursor Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005234 chemical deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000012713 reactive precursor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- -1 plasma Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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- H01J37/32715—Workpiece holder
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Abstract
Description
支持テーブル及び少なくとも1つの支持要素を有する基板支持システムと、
前記少なくとも1つの支持要素の下方向への移動を基板装填高で停止させるストッパーと、
を備え、
前記上側部分及び前記下側部分は基板処理のために前記反応室の内部空間を封止し、前記下側部分は前記上側部分との間に装填のための隙間を形成すべく前記上側部分から分離するように移動可能であり、
前記少なくとも1つの支持要素は前記支持テーブルに対して縦方向に動くことが可能であり、前記反応室内で基板を受けるべく前記支持テーブルを通って延設される。
上側部分及び下側部分を有する反応室と、
支持テーブルを有する基板支持システムと、
を備え、
前記上側部分及び前記下側部分は基板処理のために前記反応室の内部空間を封止し、前記下側部分は前記上側部分との間に装填のための隙間を形成すべく前記上側部分から分離するように移動可能であり、
前記支持テーブルは、前記反応室の前記上側部分の底面より高く基板を上昇させるように構成される。
反応室の下側部分と上側部分との間に基板を装填するための隙間を形成すべく、前記下側部分を前記上側部分から分離するように動かすことと;
支持テーブル及び少なくとも1つの支持要素を有する基板支持システムを下降させることと;
を含み、
前記少なくとも1つの支持要素は前記支持テーブルに対して縦方向に動くことが可能であり、前記支持テーブルを通じて延設され、
前記方法は更に、前記少なくとも1つの支持要素の前記下方向への移動をストッパーによって基板装填高で停止させることを含む。
反応室の下側部分と上側部分との間に基板を装填するための隙間を形成すべく、前記下側部分を前記上側部分から分離するように動かすことと;
支持テーブル上の基板を、前記反応室の前記上側部分の底面より高く上昇させることと;基板処理のために、前記上側部分と前記下側部分で前記反応室の内部空間を封止することと;
を含む。
Claims (16)
- 上側部分及び下側部分を有する反応室と、
支持テーブル及び少なくとも1つの支持要素を有する基板支持システムと、
前記少なくとも1つの支持要素の下方向への移動を基板装填高で停止させるストッパーと、
を備え、
前記上側部分及び前記下側部分は基板処理のために前記反応室の内部空間を封止し、前記下側部分は前記上側部分との間に装填のための隙間を形成すべく前記上側部分から分離するように移動可能であり、
前記少なくとも1つの支持要素は前記支持テーブルに対して縦方向に動くことが可能であり、前記反応室内で基板を受けるべく前記支持テーブルを通って延設される、
基板処理装置。 - 前記下側部分を前記支持テーブルと共に動かすように構成される、請求項1に記載の基板処理装置。
- 前記少なくとも1つの支持要素を、前記ストッパーにより停止させられるまで、前記支持テーブルと共に下降させるように構成される、請求項1又は2に記載の基板処理装置。
- 前記少なくとも1つの支持要素が前記ストッパーに停止させられた後に、前記支持テーブルを更に下降させるように構成される、請求項3に記載の基板処理装置。
- 前記ストッパーを支持する動かない取付部を備える、請求項1に記載の基板処理装置。
- 前記動かない取付部は反応室排気ラインから延設される、請求項5に記載の基板処理装置。
- 前記少なくとも1つの支持要素を前記支持テーブルと共に基板処理状態まで上昇させるように構成される、請求項1,5,6のいずれかに記載の基板処理装置。
- 前記支持テーブルは前記反応室に取り付けられ、前記支持テーブルと前記反応室の前記下側部分とは1つのパッケージとして昇降するように構成され、前記少なくとも1つの支持要素及び前記支持テーブルは共に基板装填高より高い位置に上昇するように構成され、
前記支持テーブルが前記下側部分と共に前記基板装填高から下降しても、前記少なくとも1つの支持要素は前記ストッパーにより停止させられて前記基板装填高に停まるように構成される、
請求項1に記載の基板処理装置。 - 前記反応室を少なくとも部分的に囲む外室を備える、請求項1に記載の基板処理装置。
- 基板処理状態において、前記少なくとも1つの支持要素の頂面は、基板装填のために基板装填装置により使用されるゲートバルブの装填開口部の最上部より高い位置に位置する、請求項1に記載の基板処理装置。
- 前記少なくとも1つの支持要素は、径が拡大した頂部を有するピンの形状である、請求項1に記載の基板処理装置。
- 前記反応室内で少なくとも1つの基板を連続自己制御表面反応で処理するように構成される、請求項1,8-11のいずれかに記載の基板処理装置。
- 上側部分及び下側部分を有する反応室と、
支持テーブルを有する基板支持システムと、
を備え、
前記上側部分及び前記下側部分は基板処理のために前記反応室の内部空間を封止し、前記下側部分は前記上側部分との間に装填のための隙間を形成すべく前記上側部分から分離するように移動可能であり、
前記支持テーブルは、前記反応室の前記上側部分の底面より高く基板を上昇させるように構成される、
基板処理装置。 - 基板を反応室内に装填する方法であって、
反応室の下側部分と上側部分との間に基板を装填するための隙間を形成すべく、前記下側部分を前記上側部分から分離するように動かすことと;
支持テーブル及び少なくとも1つの支持要素を有する基板支持システムを下降させることと;
前記少なくとも1つの支持要素の前記下方向への移動をストッパーによって基板装填高で停止させることと;
を含み、前記少なくとも1つの支持要素は前記支持テーブルに対して縦方向に動くことが可能であり、前記支持テーブルを通じて延設される、方法。 - 前記少なくとも1つの支持要素が前記ストッパーに停止させられた後に、前記支持テーブルを更に下降させることを含む、請求項14に記載の方法。
- 基板を反応室内に装填する方法であって、
反応室の下側部分と上側部分との間に基板を装填するための隙間を形成すべく、前記下側部分を前記上側部分から分離するように動かすことと;
支持テーブル上の基板を、前記反応室の前記上側部分の底面より高く上昇させることと;基板処理のために、前記上側部分と前記下側部分で前記反応室の内部空間を封止することと;
を含む、方法。
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