TW202229629A - 氣體供應單元及含有氣體供應單元之基板處理裝置 - Google Patents

氣體供應單元及含有氣體供應單元之基板處理裝置 Download PDF

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TW202229629A
TW202229629A TW110136370A TW110136370A TW202229629A TW 202229629 A TW202229629 A TW 202229629A TW 110136370 A TW110136370 A TW 110136370A TW 110136370 A TW110136370 A TW 110136370A TW 202229629 A TW202229629 A TW 202229629A
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相田弘栄
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Abstract

本發明揭露一種氣體供應單元。示例性氣體供應單元包括上罩板，其具有複數個注入孔；及分隔板，其構造和配置成倚靠於上罩板，以引導來自注入孔的氣體流動；其中注入孔之一者為中心注入孔，且除了中心注入孔以外的注入孔係同心環繞於中心注入孔而作為多個外注入孔；且其中分隔板具有流體連通中心注入孔的中心通孔，並具有朝向上罩板延伸的複數個突起部，從而形成複數個區域，區域之每一者為流體連通外注入孔之一者。

Description

氣體供應單元及含有氣體供應單元之基板處理裝置
本發明大體上係有關一種氣體供應單元與含有所述氣體供應單元的基板處理裝置，且更具體係，有關一種能夠控制薄膜沉積於基板之特定部分上的氣體供應單元、及一種含有所述氣體供應單元之基板處理裝置。
在製造半導體器件的製程中，隨著電路線寬度減小，需要更精確的製程控制。在作為多個重要半導體製程之一的薄膜沉積製程中，已做出各種努力來實現高度薄膜均勻性。
針對均勻薄膜沉積的多個主要因素之一是氣體供應單元。噴灑板用於通用氣體供應單元。噴灑板具有採用同軸形狀將氣體均勻供應給基板的優點。然而，由於例如排氣口和閘閥中的氣體流動，使得基板邊緣部分處的薄膜厚度和基板中心部分處的薄膜厚度可能不均勻。
本節提出之任何討論（包括問題及解決方案之討論）僅為了提供本揭露背景之目的而包括在本揭露中，且不應視為承認討論之任何或全部討論在完成本發明時已知或以其他方式構成先前技術。
提供本發明內容來以簡化形式介紹一系列概念。在以下揭露內容的示例實施例的實施方式中，將更詳細描述這些概念。本發明內容並不意欲鑑別所主張之標的事項的關鍵特徵或基本特徵，亦不意欲用以限制所主張之標的事項的範疇。
根據本發明的多個示例性實施例，提供氣體供應單元。氣體供應單元包含上罩板，其具有複數個注入孔；及分隔板，其構造及配置成倚靠於上罩板，以引導來自注入孔的氣體流動；其中注入孔之一者為中心注入孔，且除了中心注入孔以外的注入孔係同心環繞於中心注入孔而作為多個外注入孔；且其中分隔板具有流體連通中心注入孔的中心通孔，並具有延伸向上罩板的複數個突起部，從而形成複數個區域，區域之每一者為流體連通外注入孔之一者。
在各種實施例中，區域之至少一者可具有實質梯形形狀。
在各種實施例中，區域的數量可為四個，其中一區域的尺寸係大於其他三個區域的尺寸。
在各種實施例中，突起部可從中心向外徑向配置。
在各種實施例中，氣體供應單元可亦包含噴灑板，噴灑板具有複數個孔，以引導氣體流向氣體供應單元外部，其中噴灑板附接到上罩板的下表面。
在各種實施例中，氣體供應單元可更包含連接到上罩板的上表面之絕緣體，其中絕緣體具有流體連通中心注入孔的中心孔，並具有複數個外孔，外孔之每一者為流體連通外注入孔。
在各種實施例中，氣體供應單元可更包含設置在分隔板的下表面和噴灑板的上表面之間，並構造成流體連通中心通孔和區域的周邊。
在各種實施例中，氣體供應單元可包含複數個氣體分流器，氣體分流器之每一者為流體連通中心孔和外孔。
在各種實施例中，氣體供應單元可包含共同氣體管線，其構造成分支成多個分支氣體管線，分支的氣體管線之每一者連接到氣體分流器。
在各種實施例中，氣體供應單元可更包含構造成連接到共同氣體管線的上游之液化氣體管線和乾燥氣體管線。
在各種實施例中，氣體供應單元可更包含構造成控制氣體分流器的流動速度之控制器。
在各種實施例中，提供基板處理裝置。基板處理裝置包含反應腔室；定位於反應腔室中的基座，其構造和配置成支撐基板，其中裝置包含氣體供應單元，且噴灑板構造和配置成面向基座。
在各種實施例中，基板處理裝置可更包含設置在反應腔室之側壁中的基板傳輸管，其中區域中的最大區域係設置在基板傳輸管的附近。
在各種實施例中，基板處理裝置可更包含設置在反應腔室之側壁中的真空口，其中區域中的最大區域係設置在真空口的附近。
雖然在下文揭示某些實施例及實例，所屬技術領域中具有通常知識者將瞭解本揭露延伸超出本揭露及其明顯的修改與等同物之具體揭示的實施例及/或用途。因此，意欲使本揭露的範疇不應受本文所述之特定實施例的限制。
本文呈現的圖式並非意指任何特定材料、裝置、結構、或器件的實際視圖，而僅係用以描述本揭露之實施例的表示。
在本發明中，「氣體(Gas)」可包括在常溫常壓下為氣體、汽化固體及/或汽化液體的材料，並取決於上下文可由單氣體或多個氣體混合物構成。除製程氣體之外的氣體（亦即，不通過諸如噴灑板等之氣體供應單元所引入的氣體）可用於例如密封反應空間，並可包括密封氣體，諸如稀有或其他惰性氣體。術語惰性氣體可指在相當程度上未參與化學反應的氣體、及/或當施加電漿功率時可激發前驅體的氣體。術語前驅體和反應物可互換使用。
如本文所用，術語「基板(Substrate)」可指能夠使用或於其上可形成器件、電路、或薄膜的任何一或多個底層材料。
如本文中所使用，術語「膜(Film)」及「薄膜(Thin film)」可指藉由本文所揭示之方法沉積之任何連續或不連續的結構及材料。例如，「膜」及「薄膜」可包括2D材料、奈米棒、奈米管、或奈米粒子、或甚至部分或完整分子層、或部分或完整原子層、或原子及/或分子團簇。「膜」及「薄膜」可包含具有多個針孔，但仍係至少部分連續的材料或層。
製程可使用任何適宜的裝置進行，包括例如圖1所示的裝置。圖1為PECVD裝置的示意圖。在此圖式中，藉由在反應腔室100的內部提供彼此平行與面對的成對導電平板電極30、110，施加HRF功率（例如，13.56 MHz或27 MHz）至電極側30，及電接地另一電極側110，可在多個電極之間激發電漿。溫度調節器可設置在基座110（下電極）中，且其上所置放基板的溫度可在特定溫度下保持恆定。上電極30亦可用作噴灑板，且反應氣體和前驅體氣體可透過噴灑板30引入反應腔室100。另外，在反應腔室110中，可提供排氣管線140，反應腔室100內的氣體可透過排氣管線排出。
此外，可提供設置在反應腔室100下方的傳輸腔室150並可提供傳輸區域。可提供閘閥130和晶圓傳輸管135，晶圓可透過傳輸管轉移至傳輸腔室150或從其轉移出。在一些實施例中，遠程電漿單元可用於激發氣體。
在一些實施例中，可使用多重腔室模組（用於處理彼此靠近所設置晶圓的兩或四個腔室或隔室），其中反應氣體可透過共用管線供應，然而前驅體氣體可透過多個非共用管線供應。
熟習項技藝者將明白，裝置包括一或多個控制器，其經編程或另外構造成進行本文中所描述的沉積和反應器清潔處理。如熟習項技藝者的理解，（等）控制器可連通反應器中的各種電源、加熱系統、幫浦、機器手、和氣體流量控制器或閥。
另外參考圖1和圖2，示出氣體供應單元1。氣體供應單元1包括上罩板3，上罩板具有中心注入孔5和多個外注入孔6、7、8、9。外注入孔6、7、8、9同心環繞於中心注入孔5配置。
氣體供應單元1更包括分隔板10，其構造和配置成倚靠於上罩板3。分隔板10具有流體連通中心注入孔5和區域16、17、18、19的中心通孔15，區域之每一者為流體連通外注入孔6、7、8、9。
氣體供應單元1更包括多個突起部25、26、27、28，其從分隔板10延伸向上罩板3。突起部25、26、27、28構造成形成多個區域16、17、18 ，19，並可從中心向外徑向配置。所有區域16、17、18、19可具有實質相同梯形形狀，或一些區域的尺寸可大於其他區域的尺寸。第一區域16可設置在晶圓傳輸管135的附近。第二區域18可設置在真空口140的附近。
氣體供應單元1可更包括具有複數個孔的噴灑板30，以引導氣體流動向基板。噴灑板30可附接到上罩板3的下表面。
氣體供應單元1可更包括連接到上罩板3的上表面之絕緣體40。絕緣體40可包括流體連通中心注入孔5的中心孔45和多個流體連通外注入孔6、7、8、9的外孔46、47、48、49。
氣體供應單元1可更包含氣體流動通道60，氣體流動通道設置在分隔板10的下表面和噴灑板30的上表面之間，並構造成流體連通中心通孔15和區域16、17、18、19的周邊。
另參考圖3，氣體供應單元1可更包括五個氣體分流器70，其分別流體連通中心孔45和外孔47。氣體供應單元1可更包含共同氣體管線80，其分支成多個分支氣體管線81、82、83、84、85。分支氣體管線81、82、83、84、85之每一者連接到氣體分流器70。氣體供應單元1可更包括構造成連接到共同氣體管線 80的上游之液化氣體管線100和乾燥氣體管線90。
用於形成碳層的作為液態氣體之碳前驅體可引入反應腔室。多個示例性前驅體包括由分子式CxHyNz所表示的化合物，其中x是大於或等於2的自然數；y是自然數；且z是零或自然數。例如，x可從約2至約15的範圍內；y可從約4至約30的範圍內；且z可從約0至約10的範圍內。前驅體可包括具有兩或多個碳原子及一或多個氫原子的鏈或環狀分子，諸如前述分子式所表示的多個分子。舉多個特定例子來說，前驅體可為或包括具有至少一雙鍵的一或多個環狀（例如，芳族）結構及/或化合物，且在一些情況下包括兩或多個、或三或多個雙鍵。舉多個特定例子來說，碳前驅體可為或包括1,3,5-三甲苯、或2,4,6-三甲吡啶。
在任何組合中，作為乾燥氣體的一或多個惰性氣體可包括例如氬氣、氦氣、和氮氣之一或多者。惰性氣體可用於點燃電漿或促成點燃反應腔室內的電漿，以吹驅反應腔室內的反應物及/或副產物；及/或可用作載體氣體，以幫助將前驅體輸送向反應腔室。用於點燃及維持電漿的功率可從約50W至約8,000W的範圍。功率的頻率可從約2.0 MHz至約27.12 MHz的範圍。
氣體供應單元可包括控制器200，其構造成控制氣體分流器70的流動速度。藉由調節多個流動速度，可控制每個區域16、17、18、19中的氣體量。因此，可選擇性控制在特定周邊部分中所形成薄膜的均勻性或特徵。例如，可選擇性控制沉積在區域16和18中的薄膜的均勻性。
上文所述之本發明的實例實施例並未限制本發明的範疇，因為這些實施例僅為本發明之實施例的實例。任何等效實施例均意欲屬於本發明之範疇。實際上，除本文中所示及所述者以外，所屬技術領域中具有通常知識者可由本說明書明白本發明之各種修改（諸如所述元件之替代可用組合）。此類修改及實施例亦意欲落在文後申請專利範圍的範疇內。
1:氣體供應單元 3:上罩板 5:中心注入孔 6,7,8,9:外注入孔 10:分隔板 15:中心通孔 16,17,18,19:區域 25,26,27,28:突起部 30:電極/電極側/上電極/噴灑板 40:絕緣體 45:中心孔 46,47,48,49:外孔 60:氣體流動通道 70:氣體分流器 80:共同氣體管線 81,82,83,84,85:分支氣體管線 90:乾燥氣體管線 100:反應腔室/液化氣體管線 110:電極/電極側/基座/下電極/反應腔室 130:閘閥 135:晶圓傳輸管 140:排氣管線/真空口 150:傳輸腔室 200:控制器
當關連下列舉例圖式而思考時，藉由參照詳細敘述及申請專利範圍可衍生對於本發明之例示性實施例的更完整理解。 圖1為用於沉積可用於本發明之實施例的薄膜之電漿增強化學氣相沉積(PECVD)裝置的示意圖； 圖2為示出含有分隔板的氣體供應單元的示意圖；及 圖3為示出含有多個分流器和多個氣體管線的氣體供應單元的示意圖。 將理解，圖式中之元件係為了簡明及清楚起見而繪示且不一定按比例描繪。例如，多個圖式中的一些元件的尺寸可能相對於其他元件特別放大，以幫助瞭解本發明的多個例示性實施例。
1:氣體供應單元
3:上罩板
5:中心注入孔
6:外注入孔
10:分隔板
15:中心通孔
16:區域
30:電極/電極側/上電極/噴灑板
40:絕緣體
45:中心孔
46:外孔
60:氣體流動通道
100:反應腔室
110:電極/電極側/基座/下電極/反應腔室
130:閘閥
135:晶圓傳輸管
140:排氣管線/真空口
150:傳輸腔室

Claims (14)

  1. 一種氣體供應單元，其包括： 一上罩板，其具有複數個注入孔；及 一分隔板，其構造和配置成倚靠於該上罩板，以引導來自該等注入孔的氣體流動； 其中該等注入孔之一者為一中心注入孔，且除了該中心注入孔以外的該等注入孔係同心環繞於該中心注入孔而作為多個外注入孔；及 其中該分隔板具有流體連通該中心注入孔的一中心通孔，並具有朝向該上罩板延伸的複數個突起部，從而形成複數個區域，該等區域之每一者流體連通該等外注入孔之一者。
  2. 如請求項1所述之氣體供應單元，其中該等區域之至少一者具有一實質梯形形狀。
  3. 如請求項1所述之氣體供應單元，其中該等區域的數量為四個，其中該等區域之一區域的尺寸係大於該等區域之其他三個區域的尺寸。
  4. 如請求項1所述之氣體供應單元，其中該等突起部從中心向外徑向配置。
  5. 如請求項1所述之氣體供應單元，其更包含一噴灑板，該噴灑板具有複數個孔，以引導氣體流向該氣體供應單元外部，其中該噴灑板附接到該上罩板的一下表面。
  6. 如請求項1所述之氣體供應單元，其更包含一連接到該上罩板的一上表面之一絕緣體，其中該絕緣體具有流體連通該中心注入孔的一中心孔，並具有複數個外孔，該等外孔之每一者流體連通該等外注入孔。
  7. 如請求項5所述之氣體供應單元，其更包含一氣體流動通道，該氣體流動通道設置在該分隔板的一下表面和該噴灑板的一上表面之間，並構造成流體連通該中心通孔和該等區域的周邊。
  8. 如請求項6所述之氣體供應單元，其更包含複數個氣體分流器，該等氣體分流器之每一者流體連通該中心孔和該等外孔。
  9. 如請求項8所述之氣體供應單元，其更包含一共同氣體管線，其構造成分支成多個分支氣體管線，該等分支氣體管線之每一者連接到該等氣體分流器。
  10. 如請求項9所述之氣體供應單元，其更包含構造成連接到該共同氣體管線的上游之一液化氣體管線和一乾燥氣體管線。
  11. 如請求項10所述之氣體供應單元，其更包含構造成控制該等氣體分流器的流動速度的一控制器。
  12. 一種基板處理裝置，其包括： 一反應腔室； 一基座，其定位於該反應腔室中，其構造和配置成支撐一基板，其中該基板處理裝置包含如請求項1所述之氣體供應單元，且一噴灑板構造和配置成面對該基座。
  13. 如請求項12所述之基板處理裝置，其更包含設置在該反應腔室的一側壁中的一基板傳輸管，其中該等區域中的最大區域係設置在該基板傳輸管的附近。
  14. 如請求項12所述之基板處理裝置，其更包含設置在該反應腔室的一側壁中的一真空口，其中該等區域中的最大區域係設置在該真空口的附近。
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