TW202301413A - 處理基材之設備 - Google Patents

處理基材之設備 Download PDF

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TW202301413A
TW202301413A TW111109347A TW111109347A TW202301413A TW 202301413 A TW202301413 A TW 202301413A TW 111109347 A TW111109347 A TW 111109347A TW 111109347 A TW111109347 A TW 111109347A TW 202301413 A TW202301413 A TW 202301413A
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wall
gate valve
substrate
cooling
gas
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吉川潤
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荷蘭商Ａｓｍ Ｉｐ私人控股有限公司
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Abstract

一種用於處理一基材之設備可包含：一反應室，其設有一室壁；一閘閥，其提供至壁；一基材轉移室，其操作連接至閘閥；一基材轉移機器人，其設置於基材轉移室內，用於將基材通過閘閥在反應室與基材轉移室之間轉移；一基材支撐件，其設有設置於反應室內的一加熱器；及一急冷器，其與閘閥相對地提供至壁。

Description

溫度控制反應室
本揭露大致上係關於基材處理設備，且特定而言係關於溫度控制反應室，其於反應室內促成在基材上之跨越表面的更均勻製程。
積體電路包含藉由各種技術所沉積的多個材料層，等技術包括化學氣相沉積(Chemical Vapor Deposition, CVD)、原子層沉積(Atomic Layer Deposition, ALD)、電漿增強CVD (Plasma Enhanced CVD, PECVD)、及電漿增強ALD (Plasma Enhanced ALD, PEALD)。因此，半導體基材上的材料沉積在生產積體電路的製程中係關鍵步驟。在基材表面上進行均勻處理係重要的，但處理結果通常出於各種原因而變化，例如，溫度分布、閘閥方向、及/或電場強度的非均勻性。
非均勻溫度發生的主要原因是由於存在大的熱通量通往連接到晶圓轉移室的閘閥。因此，閘閥側處之室壁的溫度總是變得低於相對側處之溫度。
本節提出之任何討論（包括問題及解決方案之討論）僅為了提供本揭露脈絡之目的而包括在本揭露中，且不應視為承認討論之任何或全部在完成本發明時已知或以其他方式構成先前技術。
提供本發明內容來以簡化形式介紹一系列概念。此等概念將在下方本揭露的實例實施例之實施方式中做進一步詳盡的描述。本發明內容並非意欲鑑別所主張之主題的關鍵特徵或基本特徵，亦非意欲用以限制所主張之主題的範疇。
在一些實施例中，提供一種用於處理一基材之設備。設備包括一反應室，其設有一室壁；一閘閥，其經提供至壁；一基材轉移室，其操作連接至閘閥；一基材轉移機器人，其設置於基材轉移室內，用於將基材通過閘閥在反應室與基材轉移室之間轉移；一基材支撐件，其設有設置在反應室內的一加熱器；及一急冷器，其與閘閥相對地提供至壁。
急冷器可設有一冷卻通道。設備可經建構及/或配置以提供通過冷卻通道的一冷卻流體。冷卻流體可係一冷卻液體。冷卻液體可包含通過冷卻通道的水及一全氟聚醚(perfluorpolyether)中之一者。
替代地，冷卻流體可係一冷卻氣體。冷卻氣體可包含通過通道的空氣、氮、及惰性氣體中之至少一者。
依據本揭露之額外實例，設備可進一步包括設置於急冷器與壁之一內表面之間的一絕緣器。
依據本揭露之額外實例，設備可進一步包括在閘閥附近提供至壁之一壁加熱器。設備可進一步包括在閘閥附近提供至壁之一額外壁加熱器。設備可進一步包括提供至與閘閥相對的壁之一第二壁加熱器。
依據本揭露的額外實例，設備可進一步包括一控制器，以控制急冷器的一溫度及等壁加熱器中之至少一者的一溫度。控制器可經組態以控制壁與閘閥相對的一第一部分之溫度與壁在閘閥附近的一部分之溫度到相同值。
依據本揭露之額外實例，設備可進一步包含一氣體供應單元，其經建構及配置以面向基材支撐件。氣體供應單元可包含一噴淋頭，噴淋頭設有用於供應氣體至基材之複數個孔洞。
所屬技術領域中具有通常知識者從下列參考附圖之某些實施例的詳細描述將明白此等及其他實施例。本發明不限制於所揭示任何（多個）特定實施例。
雖然在下文揭示某些實施例及實例，所屬技術領域中具有通常知識者將理解本揭露延伸超出本揭露及其明顯的修改與等同物之具體揭示的實施例及/或用途。因此，意欲使本揭露的範疇不應受本文中所描述之特定實施例的限制。
本文中呈現的繪示並非意指任何特定材料、設備、結構、或裝置的實際視圖，而僅係用以描述本揭露之實施例的表示。
在本揭露中，「氣體(gas)」可指在常溫及常壓下為氣體之材料、汽化固體及/或汽化液體，並可取決於上下文由一單一氣體或一氣體混合物構成。除製程氣體之外的氣體（亦即，未穿行通過氣體供應單元（諸如噴淋頭）、其他氣體分配裝置或類似者而引入的氣體）可用於例如密封反應空間，其包括一密封氣體（諸如稀有氣體）。
如本文中所使用，用語「基材(substrate)」可指可使用或在其上可形成裝置、電路或膜之任何（多個）下伏材料。
如本文中所使用，用語「原子層沉積(atomic layer deposition, ALD)」可指一氣相沉積製程，其中沉積循環（較佳的係複數個接續的沉積循環）係在一製程室中實施。一般而言，在各循環期間，前驅物係化學吸附至一沉積表面（例如一基材表面或一先前沉積的下伏表面，諸如來自一先前ALD循環的材料），形成不易與額外前驅物起反應的一單層或次單層（亦即，一自限制反應）。其後，若有必要，可隨後將一反應物（例如，另一前驅物或反應氣體）引入至製程室中，以用於在沉積表面上將經化學吸附之前驅物轉化成所欲材料。一般而言，此反應物能夠進一步與前驅物起反應。進一步地，亦可在各循環期間利用吹掃步驟以從製程室移除過量前驅物，及/或在轉化經化學吸附之前驅物之後從製程室移除過量反應物及/或反應副產物。進一步地，當使用（多個）前驅物組成物、反應性氣體、及吹掃（例如惰性載體）氣體的交替脈衝進行時，如本文中所使用之用語「原子層沉積(atomic layer deposition)」亦意欲包括由相關用語指定的製程，諸如「化學氣相原子層沉積(chemical vapor atomic layer deposition)」、「原子層磊晶(atomic layer epitaxy, ALE)」、分子束磊晶(molecular beam epitaxy, MBE)、氣體源MBE、或有機金屬MBE、及化學束磊晶(chemical beam epitaxy)。
如本文中所使用，用語「化學氣相沉積(chemical vapor deposition, CVD)」可指任何製程，其中一基材係暴露於至一或多個揮發性前驅物，等前驅物在基材表面上起反應及/或分解以生產所欲沉積。
如本文中所使用，用語「膜(film)」及「薄膜(thin film)」可指藉由本文所揭示之方法沉積之任何連續或非連續的結構及材料。例如，「膜」及「薄膜」可包括2D材料、奈米棒、奈米管、或奈米粒子、或甚至部分或完整分子層、或部分或完整原子層、或原子及/或分子團簇。「膜」及「薄膜」可包含具有針孔但仍係至少部分連續的材料或層。
用於ALD、CVD、及/或類似者之設備可用於各種應用，包括在基材表面上沉積及蝕刻材料。圖1係用於處理基材80之設備1的示意圖。設備1包含反應室10，其設有室壁11、12；閘閥40，其提供至壁11；基材轉移室50，其操作連接至閘閥40；基材轉移機器人90，其設置於基材轉移室50內，用於將基材80通過閘閥40在反應室10與基材轉移室50之間轉移；基材支撐件30，其設有設置在反應室10內的加熱器31；及急冷器20，其提供至與閘閥40相對的壁12。
設備1可具有經建構及配置以面向基材支撐件30的氣體供應單元70。氣體供應單元70可包含噴淋頭72，噴淋頭設有用於供應氣體的複數個孔洞，以在基材80上形成薄膜。
急冷器20可設有冷卻通道21。設備1可經建構及/或配置以提供通過冷卻通道21的冷卻流體。冷卻流體可係一冷卻液體。冷卻液體可包含通過冷卻通道21的水及全氟聚醚中之一者。
替代地，設備1可經建構及配置以提供冷卻氣體作為通過冷卻通道21之冷卻流體。冷卻氣體可包含通過通道21的空氣、氮、及惰性氣體中之至少一者。
設備1可進一步包含設置於急冷器20與壁12之內表面之間的空間24，以更精準地控制溫度。可在空間24中放置絕緣器。
設備1可進一步包含在閘閥附近提供至壁11之壁加熱器22或帶加熱器(strip heater)。設備1可進一步包含在閘閥40附近提供至壁11之額外壁加熱器25。設備1可進一步包含提供至與閘閥40相對的壁12之第二壁加熱器26或匣式加熱器(cartridge heater)。
設備1可進一步包含控制器60以控制急冷器20的溫度及壁加熱器22、25、及26中之至少一者的溫度。控制器60可經組態以控制壁11與閘閥40相對的第一部分之溫度與壁12在閘閥40附近的一部分之溫度到相同值，造成改善製程均勻性。舉實例而言，反應室內之（例如，基材或基材支撐件之）溫度可係500 °C至約700 °C。
上文描述之本揭露的實例實施例並未限制本發明的範疇，由於此等實施例僅為本發明之實施例的實例。任何等效實施例均意欲屬於本發明之範疇。實際上，除本文所示及所描述者外，在所屬技術領域中具有通常知識者當可從本說明書明白本揭露的各種修改，諸如所描述元件的替代可用組合。此類修改及實施例亦意欲落入隨附之申請專利範圍的範疇內。
1:設備 10:反應室 11,12:壁 20:急冷器 21:冷卻通道 22,25,26:壁加熱器 24:空間 30:基材支撐件 31:加熱器 40:閘閥 50:基材轉移室 60:控制器 70:氣體供應單元 72:噴淋頭 80:基材 90:基材轉移機器人
當結合下列闡釋性圖式考慮時，可藉由參照實施方式及申請專利範圍而對本揭露之例示性實施例有更完整理解。 圖1係用於處理基材之設備的示意圖。 將瞭解到，圖式中之元件係為了簡明及清楚起見而繪示，且不必然按比例繪製。例如，圖式中之一些元件的尺寸可能相對於其他元件而特別放大，以幫助改善對所繪示本揭露實施例的理解。
1:設備
10:反應室
11,12:壁
20:急冷器
21:冷卻通道
22,25,26:壁加熱器
24:空間
30:基材支撐件
31:加熱器
40:閘閥
50:基材轉移室
60:控制器
70:氣體供應單元
72:噴淋頭
80:基材
90:基材轉移機器人

Claims (15)

  1. 一種用於處理一基材之設備，其包含： 一反應室，其設有一室壁； 一閘閥，其提供至該壁； 一基材轉移室，其操作連接至該閘閥； 一基材轉移機器人，其設置於該基材轉移室內，用於將該基材通過該閘閥在該反應室與該基材轉移室之間轉移； 一基材支撐件，其設有設置於該反應室內的一加熱器；及 一急冷器，其與該閘閥相對地提供至該壁。
  2. 如請求項1所述之設備，其中該急冷器設有一冷卻通道。
  3. 如請求項2所述之設備，其中該設備經建構配置以提供通過該冷卻通道的一冷卻流體。
  4. 如請求項3所述之設備，其中該設備經建構及配置以提供一冷卻液體作為通過該冷卻通道的該冷卻流體。
  5. 如請求項4所述之設備，其中該設備經建構及配置以提供通過該冷卻通道的一冷卻液體，該冷卻液體包含水及一全氟聚醚中之一者。
  6. 如請求項3所述之設備，其中該設備經建構及配置以提供一冷卻氣體作為通過該冷卻通道的一冷卻流體。
  7. 如請求項6所述之設備，其中該設備經建構及配置以提供通過該冷卻通道的一冷卻氣體，該冷卻氣體包含空氣、氮、及惰性氣體中之至少一者。
  8. 如請求項1所述之設備，其進一步包含設置於該急冷器與該壁之一內表面之間的一空間。
  9. 如請求項1所述之設備，其進一步包含在該閘閥附近提供至該壁之一壁加熱器。
  10. 如請求項9所述之設備，其進一步包含在該閘閥附近提供至該壁之一額外壁加熱器。
  11. 如請求項10所述之設備，其進一步包含提供至與該閘閥相對的該壁之一第二壁加熱器。
  12. 如請求項9、10及11中任一項所述之設備，其進一步包含一控制器，以控制該急冷器的一溫度及該等壁加熱器中之至少一者的一溫度。
  13. 如請求項12所述之設備，其中該控制器經組態以控制該壁與該閘閥相對的一第一部分之溫度與該壁在該閘閥附近的一部分之溫度到相同值。
  14. 如請求項1所述之設備，其進一步包含一氣體供應單元，該氣體供應單元經建構及配置以面向該基材支撐件。
  15. 如請求項14所述之設備，其中該氣體供應單元包含一噴淋頭，該噴淋頭設有用於供應氣體至該基材的複數個孔洞。
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