TWI732317B - 基板處理方法 - Google Patents

基板處理方法 Download PDF

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Publication number
TWI732317B
TWI732317B TW108137227A TW108137227A TWI732317B TW I732317 B TWI732317 B TW I732317B TW 108137227 A TW108137227 A TW 108137227A TW 108137227 A TW108137227 A TW 108137227A TW I732317 B TWI732317 B TW I732317B
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Taiwan
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supporting device
substrate
ring
substrate supporting
predetermined distance
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TW108137227A
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TW202031931A (zh
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盧載旻
金大淵
李主日
李昌敏
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荷蘭商Ａｓｍ Ｉｐ私人控股有限公司
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本發明揭露了基板處理方法。能夠藉由控制基板支撐設備的位置來改善基板上的薄膜均勻度的基板處理方法包括：使基板支撐設備沿第一方向移動第一預定距離的第一操作；使基板支撐設備沿第二方向移動第二預定距離的第二操作；使基板支撐設備沿第二方向移動第一預定距離的第三操作；以及使基板支撐設備沿第一方向移動第二預定距離的第四操作，其中第二方向可與第一方向相反。

Description

基板處理方法
本發明的一或多個實施例係有關於一種基板處理設備和基板處理方法，更具體地說，係有關於一種能夠藉由控制基板支撐設備的位置來改善基板上的薄膜均勻性的基板處理設備和基板處理方法。
如第1圖所示，在配備有多個反應器200的腔室100中，反應器200的上部400連接至腔室100的上壁100a，並且反應器200的下部500連接至腔室100的下壁100b。反應器200的上部400和下部500藉由面密封形成反應空間。
通常，腔室100的上壁100a和下壁100b包括金屬材料，例如鋁。在腔室100的上壁100a的一側包括用於反應器200的供氣裝置2(第3圖)的情況下，腔室100的上壁100a包括用於加熱供氣裝置2的加熱裝置，例如筒式加熱器(cartridge heater)(在第1圖中未示出)。藉由加熱裝置，不僅供氣裝置2而且腔室100的上壁100a均被加熱到一定溫度。因此，腔室100的上壁100a被保持在比腔室100的下壁100b高的溫度。
在高溫製程中，藉由加熱基板支撐設備300、反應器200的上部400和腔室100的上壁100a，腔室100和反應器200會發生熱變形。但是，如上所述，由於腔室100的上壁100a和下壁100b之間的溫度差，因此腔室100的上壁100a和下壁100b的熱膨脹或熱變形的程度不同。如第1圖中的箭頭所示，腔室100的上壁100a具有比其下壁100b大的熱膨脹或熱變形程度。
此外，反應器200的下部500被從基板支撐設備300和反應器的上部400傳導的熱量加熱，但是它與反應器的上部400機械地分離，並且與反應器的上部400不是一體的，且因此未達到與反應器的上部400的熱平衡。因此，反應器200的上部400和下部500的熱變形程度可能有所不同。如第1圖中的箭頭所示，反應器200的上部400的熱膨脹程度比反應器200的下部500的熱膨脹程度大。另外，如示出腔室100的上表面的第2圖中的箭頭600所示，能夠看出，反應器200的上部400的熱膨脹是從腔室100徑向指向的。
這樣，由於支撐反應器的上部400的腔室100的上壁100a與支撐反應器200的下部500的腔室100的下壁100b之間的熱膨脹差異以及反應器200的上部400與下部500之間的熱膨脹差異，在反應器200的上部400與下部500之間發生失配(mismatch)。
結果，在基板支撐設備300與反應器200的上部400中圍繞基板支撐設備300的元件之間發生失配，且因此，基板支撐設備300在反應器200中的居中位置(centering position)可能會錯位(在基板支撐設備在反應器中的佈置中心與反應器中的空間對 稱中心相同的情況下)。在這種情況下，在沉積和排氣期間，基板周圍的氣流變得不均勻，因而基板上的薄膜的均勻度(尤其是基板邊緣處的薄膜的均勻度)可能變得不均或劣化。結果，半導體裝置的缺陷率可能升高，並且反應器之間的製程可再現性(process reproducibility)可能劣化。
本發明的一或多個實施例包括一種基板處理設備和基板處理方法，基板處理設備和基板處理方法能夠在高溫製程中根據腔室的上壁與下壁之間的熱膨脹差異以及反應器的上部與下部之間的熱膨脹差異修正基板支撐設備的居中錯位，並在基板支撐設備與供氣控制環之間保持恆定的間隙，從而提高基板上的薄膜均勻度。
本發明的額外特徵將在下文中部分地闡述，並且部分地藉由本文的說明而變得明顯，或者可藉由實踐本揭露的所示實施例來瞭解。
根據一或多個實施例，一種基板處理方法包括：使基板支撐設備沿第一方向移動第一預定距離的第一操作；使基板支撐設備沿第二方向移動第二預定距離的第二操作；使基板支撐設備沿第二方向移動第一預定距離的第三操作；以及使基板支撐設備沿第一方向移動第二預定距離的第四操作，其中第二方向可與第一方向相反。
根據此方法的一個示例，此方法可包括：使基板支 撐設備沿第三方向移動第一預定距離的第五操作；使基板支撐設備沿第四方向移動第二預定距離的第六操作；使基板支撐設備沿第四方向移動第一預定距離的第七操作；以及使基板支撐設備沿第三方向移動第二預定距離的第八操作，其中第四方向可垂直於第一方向和第二方向，並且可與第三方向相反。
根據此方法的一個示例，基板處理設備可更包括圍繞基板支撐設備的環，並且在環與基板支撐設備之間可存在間隙。
根據此方法的另一個示例，第一預定距離可大於或等於(環的內徑減去基板支撐設備的外徑)/2。
根據此方法的另一個示例，第一預定距離可小於或等於(環的內徑減去基板支撐設備的外徑)。
根據此方法的另一個示例，第二預定距離可以是(環的內徑減去基板支撐設備的外徑)/2。
根據此方法的另一個示例，在施行第一至第八操作之後，間隙的徑向長度在間隙的整個截面上可以是恆定的。
根據此方法的另一個示例，在第一至第八操作中的至少一個期間，環的一個表面可藉由基板支撐設備的移動而與基板支撐設備接觸，並且環可配置以在保持與基板支撐設備接觸的同時沿基板支撐設備的移動方向移動。
根據一或多個實施例，提供了一種包括複數個反應器的基板處理設備的基板處理方法，其中每個反應器包括：上主體；基板支撐設備；圍繞基板支撐設備並設置在基板支撐設備與上主體 之間的環，並且上主體和基板支撐設備形成反應空間，基板支撐設備的下部區域形成下部空間，在環與基板支撐設備之間存在間隙，並且反應空間和下部空間藉由間隙彼此連通，其中，基板處理方法包括使基板支撐設備相對於環居中。
根據基板處理方法的一個示例，使基板支撐設備相對於環居中可更包括：使基板支撐設備沿第一方向移動第一預定距離的第一操作；使基板支撐設備沿第二方向移動第二預定距離的第二操作；使基板支撐設備沿第二方向移動第一預定距離的第三操作；使基板支撐設備沿第一方向移動第二預定距離的第四操作；使基板支撐設備沿第三方向移動第一預定距離的第五操作；使基板支撐設備沿第四方向移動第二預定距離的第六操作；使基板支撐設備沿第四方向移動第一預定距離的第七操作；以及使基板支撐設備沿第三方向移動第二預定距離的第八操作，其中第二方向可與第一方向相反，第四方向可垂直於第一方向和第二方向，並且可與第三方向相反。
根據基板處理方法的另一個示例，環安置在上主體上以相對上主體可滑動。
根據基板處理方法的另一個示例，環可安裝為可在基板支撐設備的推力下移動。
根據基板處理方法的另一個示例，每個反應器可包括：用於移動基板支撐設備的對準裝置；以及連接至對準裝置並用於控制基板支撐設備的移動的控制器，其中，基板處理方法還可包 括：在第一操作之前，向控制器輸入環的內徑和基板支撐設備的外徑。
根據基板處理設備的另一個示例，控制器可配置以使用輸入的環的內徑和基板支撐設備的外徑計算第一預定距離和第二預定距離。
根據基板處理設備的一個示例，基板處理設備可一次處理一批基板，並且可包括：對一批基板進行一系列或複數個系列的處理；使基板支撐設備相對於環居中；對另一批基板施行一系列或多個系列的處理；以及再次使基板支撐設備相對於環居中。
根據基板處理設備的另一個示例，對於每個反應器，使基板支撐設備相對於環居中可同時施行或在不同的時間施行。
根據基板處理設備的另一個示例，使基板支撐設備相對於環居中可在每個反應器的空閒時段(idle period)內進行。
根據基板處理設備的另一個示例，每個反應器可更包括：將氣體引入反應空間的第一進氣口；以及將氣體引入下部空間的第二進氣口，其中，環可藉由調節環與基板支撐設備之間的間隙來控制反應空間與下部空間之間的壓力平衡。
根據基板處理設備的另一個示例，第二進氣口可調節引入下部空間的氣體量，以防止反應空間中的氣體通過間隙被引入下部空間中。
根據基板處理設備的另一個示例，藉由使基板支撐設備相對於環居中，間隙的徑向長度在間隙的整個截面上是恆定 的，從而有效地防止反應空間中的氣體被引入下部空間中。
1:第一進氣口
2:供氣裝置
3、300:基板支撐設備
4:射頻桿
5:反應空間
6、7:排氣裝置
8:環
9:第二進氣口
10:下部空間
11、19:驅動馬達
12:可伸縮部分
12a:第一可伸縮部分
12b:第二可伸縮部分
13:下主體
14:對準裝置
15:控制器
16:上主體
17:腔室上壁
18:下主體支撐件
20:腔室下壁
21:組件支撐件
61:對準裝置支撐模組
100:腔室
100a:上壁
100b:下壁
200:反應器
400:上部
401、402、403、404、405、406、407、408:操作
500:下部
600:箭頭
700:基板插入部
2700:冷卻器
A、A1、B、B1:寬度
A2、B2、e:距離
BB:可伸縮部分插入部
C:外徑
D、I:內徑
f:徑向厚度
G:間隙
g:長度
h1、h2:厚度
HH:插入部
m:第一預定距離
P:墊
S:臺階
ST:止動件
藉由下文中結合附圖做出的說明，本揭露的一些實施例的上述及其它形式、特徵和優點將變得更明顯，其中：第1圖是包括複數個反應器的腔室的剖面圖；第2圖是包括複數個反應器的腔室的上視圖；第3圖是根據實施例的基板處理設備的視圖；第4圖是製程氣體和填充氣體在基板支撐設備與環之間的間隙中流動的視圖；第5圖是從基板支撐設備的頂部觀察時相對於環偏心的基板支撐設備的視圖；第6A圖是在基板支撐設備相對於環居中時基板支撐設備的溫度分佈圖，且第6B圖是在基板支撐設備相對於環向左側偏心時基板支撐設備的溫度分佈圖；第7圖是根據實施例的基板處理設備的視圖；第8圖是根據其它實施例的基板處理設備的視圖；第9圖是根據實施例的基板處理方法的視圖；第10圖和第11圖是根據實施例的基板處理設備的局部放大圖；第12圖是居中位置錯位的基板支撐設備的一個示例的視圖；第13A圖至第13D圖是使用根據實施例的基板處理方法使第12圖的基板支撐設備相對於環居中的過程的視圖； 第14圖是從基板支撐設備的頂部觀察時藉由根據實施例的基板處理方法使基板支撐設備相對於環居中的視圖；第15圖是居中位置錯位的基板支撐設備的另一個示例的視圖；第16A圖至第16D圖是使用根據實施例的基板處理方法使第15圖的基板支撐設備相對於環居中的過程的視圖；第17圖和第18圖是根據實施例的基板處理方法的視圖；第19圖是根據實施例的包括兩個或更多反應器的基板處理設備的視圖；第20圖是根據實施例的基板處理設備的對準裝置的視圖；第21圖是根據實施例的基板處理設備的對準裝置支撐模組的視圖；第22圖是根據其它實施例的基板處理設備的視圖；第23圖是根據其它實施例的基板處理設備的視圖；和第24圖是根據其它實施例的基板處理設備的視圖。
現在將參照附圖中所示的示例性實施例詳細說明本發明，其中，在附圖中，相似的附圖標記始終代表相似的元件。就此而言，本發明的實施例可具有不同的形式，並且不應被理解為限於在此闡述的說明。因此，下面僅藉由參照附圖來說明這些實施例，以解釋本說明書的各個形式。在本文中所用的術語“及/或”包括一或多個相關的所列項目的任何和所有組合。當在元素清單之前時出 現時，諸如“至少一個”之類的表述修飾整體元素清單，而不是修飾清單的各個元素。
本文中所用的術語僅用於說明特定實施例，而不旨在限制本揭露。除非在上下文中另行明示，否則在本文所用的單數形式“一”和“該”意圖涵蓋複數形式。還應理解，在本文中所使用的術語“包括”、“包含”及其各種變化形式表明存在所述特徵、整數、步驟、製程、構件、元件及/或由它們構成的群組，但不排除存在或增加一或多個其它特徵、整數、步驟、製程、構件、元件及/或由它們構成的群組。在本文中所用的術語“及/或”包括一或多個相關的所列項目的任何和所有組合。
應理解，雖然在本文中可能使用術語“第一”、“第二”等來描述各種構件、元件、區域、層及/或部分，但是這些構件、元件、區域、層及/或部分不應受這些術語的限制。這些術語不表示任何順序、數量或重要性，而僅用於將一個元件、區域、層及/或部分與另一個元件、區域、層及/或部分區分開來。因此，在不脫離本實施例的教導的前提下，下文論述的第一構件、元件、區域、層或部分也可稱為第二構件、元件、區域、層或部分。
下面將參照附圖來說明本揭露的實施例，本揭露的實施例在這些附圖中是示意性地示出的。在附圖中，由於製造技術及/或公差等原因，所示的形狀可能有所差異。因此，本揭露的實施例不應被理解為限於本文所示的區域的特定形狀，而應理解為可包括由製造製程等原因導致的形狀偏差。
第3圖是根據實施例的基板處理設備的一個反應器的示意性剖面圖。
基板處理設備中的一個反應器可包括上主體和下主體。上主體和下主體可彼此連接。更詳細地說，反應器的上主體和下主體可形成內部空間，同時彼此面接觸(face-contacting)並面密封(face-sealing)。反應器可包括設置在其內部空間中的基板支撐設備、以及圍繞基板支撐設備並設置在基板支撐設備與上主體之間的環。
每個反應器可以是在其中施行原子層沉積(atomic layer deposition，ALD)或化學氣相沉積(chemical vapor deposition，CVD)製程的反應器。
反應器的上主體16可包括第一進氣口1、供氣裝置2、排氣裝置6和7、以及環8。反應器的下主體13可包括第二進氣口9。上主體16和基板支撐設備3可形成反應空間5。下主體13和基板支撐設備3可形成下部空間10。
環8圍繞基板支撐設備3，並且可設置在基板支撐設備3與上主體16之間。環8通常可具有圓環形狀，但是不限於此。例如，在基板支撐設備3為矩形的情況下，環8可具有矩形環形狀。環8可固定至上主體16。
在環8與基板支撐設備3之間可有間隙G。反應空間5與下部空間10可藉由間隙G彼此連通。
基板支撐設備3可包括用於支撐基板的基座主體 (susceptor body)和用於加熱由基座主體支撐的基板的加熱器。為了裝載/卸載基板，基板支撐設備3可配置以連接至設置在基板支撐設備的一側上的驅動馬達11，並且可垂直移動。反應器的下主體13可配置以藉由反應器的下主體支撐件18而與其連接的驅動馬達19垂直移動。
但是，如第8圖所示，在反應器的下主體13、反應器的下主體支撐件18、以及腔室下壁20是一體的情況下，為了裝載/卸載基板，反應器可包括設置在反應器的下主體13中的基板插入部700，而不是驅動馬達19。
根據另一個實施例，如第23圖所示，第3圖的反應器的上主體16和下主體13可以是一體的。在這種情況下，第二進氣口9可配置在腔室下壁20的一側上。根據這種變化形式，僅藉由反應器的上主體16、基板支撐設備3和環8即可使基板支撐設備3居中。
根據另一個替代實施例，如第24圖所示，其中不需要第3圖的反應器的下主體13、下主體支撐件18和驅動馬達19，反應器的上主體16和基板支撐設備3可單獨形成沉積設備和反應空間。在這種情況下，腔室中的反應器可共用下部空間10。另外，第二進氣口9可配置在腔室下壁20的一側上。
在下主體13的下表面與驅動馬達11之間可設有可伸縮部分12。更詳細地說，可伸縮部分12可包括將下主體13的下表面連接至腔室下壁20的第一可伸縮部分12a和將腔室下壁20連接至驅動馬達11的第二可伸縮部分12b。可伸縮部分12可設置在下主體13 的下表面與驅動馬達11之間，以將下部空間10與外部隔離。
第二可伸縮部分12b可隨著基板支撐設備3的移動而被拉伸。例如，第二可伸縮部分12b可具有波紋狀(corrugated)配置(例如波紋管(bellows))。在這種情況下，當基板支撐設備3和驅動馬達11升高時，第二可伸縮部分12b可收縮，而當基板支撐設備3和驅動馬達11降低時，第二可伸縮部分12b可擴張。
在一個替代實施例中，第二可伸縮部分12b可具有彈性。例如，可調節第二可伸縮部分12b的彈性，以使其回應於基板支撐設備3的垂直移動而伸展或收縮，從而可保持下主體13的下表面與驅動馬達11之間的遮蓋。
藉由第一進氣口1引入的製程氣體可藉由供氣裝置2供應至反應空間5和基板。供氣裝置2可以是噴頭，並且噴頭的底部可包括形成為噴射製程氣體(例如沿垂直方向噴射)的多個供氣孔。供應到基板上的製程氣體可與基板發生化學反應，或者發生氣體之間的化學反應，然後在基板上沉積薄膜或蝕刻基板上的薄膜。
在電漿製程中，高頻(射頻(RF))功率供應器可電性連接至用作一個電極的供氣裝置2。更詳細地說，連接至射頻功率供應器的射頻桿4可連接至供氣裝置2。在這種情況下，上部射頻功率藉由射頻產生器和射頻匹配器組成的射頻功率供應器以及射頻桿4供應至供氣裝置2，並且藉由第一進氣口1引入反應空間5中的反應氣體可被激發以產生電漿。
在反應空間5中，與基板進行化學反應之後殘留的殘 餘氣體或未反應氣體可藉由排氣空間7和排氣裝置6中的排氣泵(未示出)排放到外部。排氣方法可以是上排氣或下排氣。
第4圖是製程氣體和填充氣體在基板支撐設備與環之間的間隙中流動的視圖。
參考第4圖，藉由第一進氣口1引入的製程氣體可藉由供氣裝置2供應至反應空間5和基板。
另外，可藉由第二進氣口9將填充氣體引入下部空間10。填充氣體在基板支撐設備3與環8之間的間隙G中形成氣簾(gas curtain)，以防止反應空間5中的氣體流入下部空間10。例如，填充氣體可以是氮氣(nitrogen)或氬氣(argon)。或者，可藉由第二進氣口9將具有比供應至反應空間5的氣體低的放電率的氣體供應至下部空間10，以防止在反應空間5中產生電漿時在下部空間10中產生寄生電漿(parasitic plasma)。
如第4圖所示，在上主體16和基板支撐設備3之間可設置環8。例如，環8可包括氣流控制環(flow control ring，FCR)。環8可藉由調節上主體16與基板支撐設備3之間的間隙的寬度來控制反應空間5與下部空間10之間的壓力平衡。
更詳細地說，環8調節上主體16與基板支撐設備3之間的間隙的寬度，即，環8與基板支撐設備3之間的間隙的寬度。因此，環8可控制間隙周圍的填充氣體流和製程氣體流的寬度，從而控制填充氣體和製程氣體的壓力。如第4圖所示，基板支撐設備3與環8之間的間隙G的寬度A和B保持相同(即，A=B)，從而在間隙G 的整個截面上平衡反應空間5與下部空間10之間的壓力。
但是，如上所述，在高溫製程中，由於因腔室和反應器的各部分之間的溫差而引起的熱膨脹差異，反應器的每個部分發生失配。例如，由於腔室上壁17、反應器的上主體16和下主體13、以及腔室下壁20之間的熱膨脹差異，在反應器的元件之間發生失配，這可能導致基板支撐設備3相對於環8的居中位置發生錯位。即，間隙G的寬度A和B在整個截面上可能不是恆定的(A≠B)。第5圖中示出了基板支撐設備3相對於環8偏心的一些示例。
這樣，當基板支撐設備3與環8之間的間隙不恆定(A≠B)時，圍繞基板支撐設備3的邊緣的間隙G中的填充氣體和反應氣體的壓力平衡可根據間隙G的位置而有所變化。
另外，在高溫製程中，由於基板支撐設備3與環8之間的溫差較大(例如，基板支撐設備3的溫度大約為500℃，而環8的溫度大約為200℃)，基板支撐設備3的溫度分佈可根據基板支撐設備3與環8的對準情況而有所變化。這是因為，環8離基板支撐設備3越近，對基板支撐設備3的導熱性的影響越大。從第6A圖所示的模擬結果能夠看出，當基板支撐設備相對於環居中時，基板支撐設備的溫度分佈是恆定的。另外，從第6B圖所示的模擬結果能夠看出，當基板支撐設備相對於環向左偏心時，基板支撐設備的溫度分佈不是恆定的。
即，當基板支撐設備3與環8之間的間隙不恆定時(A≠B)，不僅填充氣體和反應氣體的壓力平衡取決於間隙G的位置， 而且基板支撐設備3的溫度分佈也可能不是恆定的。這可能導致基板上的薄膜的不均勻，尤其是在基板邊緣處的薄膜的不均勻，而這可能會使半導體裝置的缺陷率升高。
因此，需要一種能夠在高溫下使用基板處理設備時校正基板支撐設備的中心的偏移並使基板支撐設備3與環8之間的間隙G的寬度A和B保持恆定的方法。
第7圖是根據實施例的包括多個反應器的基板處理設備的示意性剖面圖。
與第1圖和第3圖的反應器不同的是，第7圖的反應器可更包括設置在基板支撐設備3與驅動馬達11之間的對準裝置14和控制器15。
對準裝置14和控制器15可由組件支撐件21支撐。
對準裝置14可配置以移動基板支撐設備3。例如，對準裝置14可對準基板支撐設備3的左右位置，以在反應器中對準基板支撐設備3。
控制器15連接至對準裝置14，並且可配置以藉由控制對準裝置14來控制基板支撐設備3的移動。雖然第7圖示出了每個反應器分別具有控制器15，但是在其它實施例中，每個反應器可共用一個控制器。即，一個控制器可控制所有反應器的基板支撐設備的移動。
下面將參照第9圖至第18圖詳細說明藉由對準裝置14和控制器15施行的基板支撐設備3的對準方法。
另外，與第1圖和第4圖的基板處理設備不同的是，設置在上主體16與基板支撐設備3之間的環8可安置在上主體16上，以可相對於上主體16滑動或浮動。例如，當向環8施加推力時，環8可沿作用在上主體16上的力的方向由推力移動。
更詳細地說，上主體16可包括朝向上主體16的下部內的反應空間的臺階S。在這種情況下，環8可安置在臺階S中。當將環8安置在上主體16的臺階S上時，臺階S的壁與環8的外壁可隔開一定的間距。在另一個實施例中，臺階S還可包括墊P，並且環8可安置在墊P上以可相對於墊P滑動。環8可安裝為可在基板支撐設備3的推力作用下在臺階S中移動。例如，如下文中所說明的，環8的一個表面可在基板支撐設備3的移動作用下與基板支撐設備3接觸，並且可在保持與基板支撐設備3接觸的同時沿基板支撐設備3的移動方向移動。
在另一個實施例中，環8可相對於上主體16固定。
第8圖是其它實施例的基板處理設備的視圖。
與第7圖的基板製程不同的是，反應器的下主體13、反應器的下主體支撐件18和腔室下壁20可以是一體的。在這種情況下，無需使反應器的下主體13垂直移動以裝載/卸載基板。因此，反應器可在反應器的下主體13中包括基板插入部700，而不是第7圖的驅動馬達19。
為了裝載/卸載基板，基板支撐設備3可連接至設置在基板支撐設備3的一側的驅動馬達11，以垂直移動，並且基板可 藉由基板插入部700插入。
在另一個實施例中，如第23圖所示，反應器的上主體和下主體以及腔室下壁可以是一體的。在這種情況下，第二進氣口9可設置在腔室下壁20中，而不是設置在下主體上。
第9圖是根據實施例的基板處理方法的視圖。
參考第9圖，在操作401中，基板支撐設備可沿第一方向移動第一預定距離。
第一方向可以是與地面水平的方向。在一個替代實施例中，第一方向可以是-x軸方向。例如，基板支撐設備可沿-x軸方向朝環移動。
第一預定距離可大於或等於(環的內徑減去基板支撐設備的外徑)/2。第一預定距離可小於或等於(環的內徑減去基板支撐設備的外徑)。
在操作401中移動基板支撐設備的同時，基板支撐設備可能與環接觸，也可能不與環接觸。在前一種情況下，即使在基板支撐設備與環接觸之後，在基板支撐設備繼續移動時，也可藉由基板支撐設備的推力使環沿第一方向移動。在後文中將參照第13A圖說明這個形式。在後一種情況下，由於基板支撐設備不與環接觸，因此沒有推力作用在環上，因而環可能不會移動。在後文中將參照第16A圖說明這個形式。
然後，在操作402中，基板支撐設備可沿第二方向移動第二預定距離。
第二方向可與第一方向相反。例如，在第一方向是-x軸方向的情況下，第二方向可以是x軸方向。
第二預定距離可以是(環的內徑減去基板支撐設備的外徑)/2。如下文所述，第二預定距離具有使得基板支撐設備可相對於環居中的數值。
然後，在操作403中，基板支撐設備可沿第二方向移動第一預定距離。
在操作403中移動基板支撐設備的同時，基板支撐設備可與環接觸。即使在基板支撐設備與環接觸之後，在基板支撐設備繼續移動時，也可藉由基板支撐設備的推力使環沿第二方向移動。在後文中將參照第13C圖和第16C圖說明這個形式。
隨後，在操作404中，基板支撐設備可沿第一方向移動第二預定距離。
在第二方向與第一方向相反的情況下，應理解的是，在施行操作401至404之後，基板支撐設備的最終位置與基板支撐設備的初始位置是相同的。這是因為，在操作401至404期間，基板支撐設備分別沿第一方向和與第一方向相反的方向移動了第一預定距離，並且還分別沿第一方向和與第一方向相反的方向移動了第二預定距離。但是，藉由操作401至404，基板支撐設備可在第一方向上相對於環居中。這是因為，在操作401及/或操作403期間，基板支撐設備改變了環的位置。即，本揭露藉由校正環的位置而不是校正基板支撐設備的位置使基板支撐設備相對於環居中。在後文中 將參照第12圖至13D說明這個形式。
然後，在操作405中，基板支撐設備可沿第三方向移動第一預定距離。
第三方向可以是與地面水平的方向。另外，第三方向可垂直於第一方向和第二方向。在一個替代實施例中，第三方向可以是y軸方向。例如，基板支撐設備可沿y軸方向朝環移動。
在操作405中移動基板支撐設備的同時，基板支撐設備可能與環接觸，也可能不與環接觸。在前一種情況下，即使在基板支撐設備與環接觸之後，在基板支撐設備繼續移動時，也可藉由基板支撐設備的推力使環沿第三方向移動。
隨後，在操作406中，基板支撐設備可沿第四方向移動第二預定距離。
另外，第四方向可垂直於第一方向和第二方向。而且，第四方向可與第三方向相反。例如，在第三方向是y軸方向的情況下，第四方向可以是-y軸方向。
隨後，在操作407中，基板支撐設備可沿第四方向移動第一預定距離，並且在操作408中，基板支撐設備可沿第三方向移動第二預定距離。
在操作407中移動基板支撐設備的同時，基板支撐設備可能與環接觸，也可能不與環接觸。在前一種情況下，即使在基板支撐設備與環接觸之後，在基板支撐設備繼續移動時，也可藉由基板支撐設備的推力使環沿第四方向移動。
在與操作401至404相同的背景下，在第四方向與第三方向相反的情況下，在施行操作405至408之後，基板支撐設備的最終位置是基板支撐設備的初始位置。但是，藉由操作405至408，基板支撐設備可在第三方向上相對於環居中。這是因為在操作405及/或操作407期間，環被基板支撐設備沿第三方向或第四方向移動了。
第10圖是根據實施例的基板處理設備的局部放大圖。為了易於理解，僅示出了基板處理設備的複數個反應器之中的一個，並且略去了反應器的上主體的構造。
第10圖示出了相對於環8居中的基板支撐設備3。
如第10圖所示，環8的內徑長度為D，並且基板支撐設備3的外徑長度為C。環8的內徑長度D和基板支撐設備3的外徑長度C是恆定的。環8的內徑長度D和基板支撐設備3的外徑長度C可在第9圖的操作401之前輸入至控制器15。控制器15可使用輸入的環8的內徑長度D和輸入的基板支撐設備3的外徑長度C來計算基板支撐設備3的移動距離。如上所述，根據本揭露，可僅藉由環8的內徑長度D和基板支撐設備3的外徑長度C來使基板支撐設備居中，而不必安裝用於測量基板支撐設備3與環8之間的距離的獨立偵錯機構。這將在後文中說明。
在第10圖的左側和右側中，基板支撐設備3與環8之間的間隙G的寬度分別為A和B。
由此建立了關聯運算式D=A+B+C(其中A和B是變 數，C和D是常數)。
在此示例中，由於基板支撐設備3相對於環8居中，因此基板支撐設備3與環8之間的間隙G的寬度A和B相同。即，A=B=(D-C)/2。A和B的初始值也可輸入至控制器15。
如參照第9圖以及第13A圖至第13D圖所述，本揭露的方法可使用以下原理。本揭露可使用對準裝置14使基板支撐設備3與環8的一側接觸，以使基板支撐設備3居中。例如，基板支撐設備3可向左移動，以與環8的一側接觸。結果，A=0。為了使基板支撐設備3與環8的一側接觸，在第9圖的方法中，第一預定距離可大於或等於(D-C)/2。然後，可從關聯運算式D=A+B+C匯出B的值，B=(D-C)(D和C是常數，其中A=0)。然後可再次使用對準裝置14使基板支撐設備3沿相反方向移動B/2=(D-C)/2。因此，A’=B’=(D-C)/2(即，A=A’且B=B’)，由此可完成基板支撐設備3的居中。在一實施例中，可藉由控制器15施行與基板支撐設備3的移動距離有關的計算。如上所述，控制器15可僅使用輸入的環8的內徑長度D和輸入的基板支撐設備3的外徑長度C來計算基板支撐設備3的移動距離。
根據本揭露的另一個實施例，如第10圖和第11圖中所示，上主體16在其下部內側可包括朝向反應空間的臺階S。在這種情況下，環8可安置在臺階S內。在另一個實施例中，臺階S還可包括墊P，並且環8可安置在墊P上。環8可在墊P上安置為可相對於墊P滑動。在此實施例中，墊P的長度為g。
環8的徑向厚度為f。較佳地，墊P的長度g大於或等於環8的徑向厚度f，從而當環8移動時，環8完全坐在墊P上。
較佳地，上主體的內徑I小於環8的內徑D與環8的徑向厚度f之和。由於這種配置，即使如第11圖所示將環8最大程度地推向一側，環8仍可在相對側坐在墊P上。
從環8的外壁至臺階S的距離為e，並且距離可隨著環8的移動而變化。
如上所述，在本揭露的方法中，第一預定距離可大於或等於(環的內徑減去基板支撐設備的外徑)/2。當環的徑向厚度f小於墊P的長度g時，在移動第一預定距離期間，基板支撐設備可能會與下主體的壁碰撞。因此，較佳地，環的徑向厚度f大於(環的內徑D減去基板支撐設備的外徑C)/2(即，基板支撐設備的移動距離)。或者，如第22圖所示，在一種變化形式中，環8的厚度h1可與基板支撐設備3的厚度h2相同，使得基板支撐設備在移動第一預定距離期間不與下主體13的壁碰撞。即，與第10圖相比，藉由將墊P的上表面配置為不高於基板支撐設備3的下表面，能夠實現這樣的技術效果。這樣，環8可在墊P上移動，並且基板支撐設備3在移動第一預定距離時不會與下主體13的壁碰撞。
根據另外的實施例，如第11圖所示，環8可更包括位於在其下部的止動件ST。止動件ST可防止環8過度移入上主體的墊P中。止動件ST設置在環8的內壁與環8的下表面之間。
如上所述，基板支撐設備的中心可隨著基板處理設 備的熱膨脹移動。第12圖是居中位置錯位的基板支撐設備的一個示例的視圖。
在第12圖的左側和右側中，基板支撐設備3與環8之間的間隙G的寬度分別為A1和B1(其中A1和B1為非零常數，且A1≠B1)。
因此，建立了關係式D=A1+B1+C。
在此示例中，基板支撐設備3相對於環8不居中，並且基板支撐設備3向第12圖的左側偏置(即，A1<B1)。
第13A圖至13D示出了使用第9圖的基板處理方法使第12圖的基板支撐設備3相對於環8居中的過程。
為了便於說明，在下文中，第一方向是-x軸方向(圖中的左側)，第二方向是x軸方向(圖中的右側)，第一預定距離是m(m>(D-C)/2)，第二預定距離是(環的內徑D減去基板支撐設備的外徑C)/2。
首先，參考第9圖和第13A圖，根據第9圖的操作401，藉由控制器15和對準裝置14使基板支撐設備3沿第一方向(向左方向)移動第一預定距離m。
在此示例中，由於m>A1，因此在操作401中，基板支撐設備3在移動了距離A1之後與環8接觸，並且可在保持與環8接觸的同時進一步移動剩餘距離(m-A1)。因此，環8可在保持與基板支撐設備3接觸的同時沿基板支撐設備3的移動方向(即，向左方向)移動(m-A1)。
因此，在左側，從環8的外壁至臺階S的距離為e-(m-A1)。對應地，在右側，從環8的外壁至臺階S的距離為e+(m-A1)。
另外，在左側，基板支撐設備3與環8之間的間隙為0，而在右側，基板支撐設備3與環8之間的間隙為(D-C)。
接下來參考第9圖和第13B圖，根據第9圖的操作402，使基板支撐設備3沿第二方向(向右方向)移動第二預定距離((D-C)/2)。
在第9圖的操作402中，由於基板支撐設備3在移動時不推動環8，因此環8的位置不變。因此，即使在施行了操作402之後，在左側，從環8的外壁至臺階S的距離仍然是e-(m-A1)。
此外，由於基板支撐設備3的移動，在左側，基板支撐設備3與環8之間的間隙是(D-C)/2，而在右側，基板支撐設備3與環8之間的間隙也是(D-C)/2。即，藉由操作401和402，基板支撐設備3在x軸上相對於環8居中。
但是，如參照第15圖以及第16A圖至16D所述，在第一預定距離m小於基板支撐設備3與環8之間在-x方向上的距離A2但大於基板支撐設備3與環8之間在+x方向上的距離B2時(即，B2<m<A2)，僅藉由操作401和402可能無法使基板支撐設備3相對於環8居中。也就是說，無法藉由基本方程式在-x方向上進行居中計算，並且還需要在+x方向上進行居中處理。
在所有情況下(包括在這些情況下)，要施行下文所述 的操作403和404，以使基板支撐設備3居中。
參考第9圖和第13C圖，根據第9圖的操作403，使基板支撐設備3沿第二方向(向右方向)移動第一預定距離m。
在此示例中，由於假定第一預定距離m大於(D-C)/2，因此在操作403期間，基板支撐設備3在移動距離(D-C)/2之後與環8接觸，並且可在保持與環8接觸的同時進一步移動剩餘距離(D-C)/2。因此，環8可在保持與基板支撐設備3接觸的同時沿基板支撐設備3的移動方向(即，向右方向)進一步移動(m-(D-C)/2)。
因此，在右側，從環8的外壁至臺階S的距離為e-A1+(D-C)/2。因此，在左側，從環8的外壁至臺階S的距離為e+A1-(D-C)/2。
另外，在右側，基板支撐設備3與環8之間的間隙可為0，而在左側，基板支撐設備3與環8之間的間隙可為(D-C)。
接下來參考第9圖和第13D圖，根據第9圖的操作404，使基板支撐設備3沿第一方向(向左方向)移動第二預定距離((D-C)/2)。
在第9圖的操作404中，由於基板支撐設備3在移動時不推動環8，因此環8的位置不變。因此，即使在施行了操作404之後，在右側，從環8的外壁至臺階S的距離仍然是e-A1+(D-C)/2。
此外，由於基板支撐設備3的移動，在左側，基板支撐設備3與環8之間的間隙是(D-C)/2，而在右側，基板支撐設備3與環8之間的間隙也是(D-C)/2。即，藉由操作403和404，基板支 撐設備3在x軸上相對於環8居中。
如上所述，在施行操作401至404之後，基板支撐設備3的最終位置(即，第13D圖中的位置)與基板支撐設備3的初始位置(即第12圖中的位置)相同。但是，藉由比較第12圖和第13D圖能夠看出，相對於環8向左偏置的基板支撐設備3藉由第9圖的操作401至404變為居中。這是因為，在操作401和403期間，基板支撐設備3改變了環8的位置。實際上，能夠看出，與第12圖的環8相比，第13D圖的環8向左移動了(D-C)/2-A1。根據類似的邏輯，當在相對於環向右偏置的基板支撐設備上施行上述方法時，可藉由向右移動環而不是移動基板支撐設備來使基板支撐設備相對於環居中。
即，本揭露藉由校正環8的位置而不是校正基板支撐設備3的位置使基板支撐設備3相對於環8居中。
第13A圖至第13D圖示出了藉由施行第9圖的操作401至404使基板支撐設備3相對於環8在x軸上居中的過程。根據類似的方式，當相對於y軸施行第9圖的操作405至408時，也可使基板支撐設備3相對於環8在y軸上居中。
第14圖是從反應器的頂部觀察時藉由第9圖的基板處理方法使基板支撐設備相對於環居中的視圖。
在此實施例中，第一方向是-x軸方向(圖中的左側)，第二方向是x軸方向(圖中的右側)，第三方向是y軸方向(圖中的向上方向)，第四方向是-y軸方向(圖中的向下方向)，第二預定距離是(環的內徑減去基板支撐設備的外徑)/2。
第14圖的(a)至(e)示出了藉由施行第9圖的操作401至404使基板支撐設備相對於環在x軸上居中的過程。接下來，如第14圖的(f)至(i)所示，藉由相對於y軸施行第9圖的操作405至408，也可使基板支撐設備相對於環也在y軸上居中。藉由這種方式，基板支撐設備可相對於環8整體居中。
更詳細地說，第14圖(a)示出了基板支撐設備從環的內徑中心向左偏心大約0.5毫米的狀態。然後，根據第9圖的操作401，對準裝置使基板支撐設備向左移動，以與環的一個表面接觸(參見第14圖(b))。在此，如上所述，(第10圖的)控制器15可使用輸入的環的內徑和輸入的基板支撐設備的外徑來計算基板支撐設備的移動距離。即，控制器可使用輸入的環的內徑和輸入的基板支撐設備的外徑來計算第一預定距離和第二預定距離。
然後，根據第9圖的操作402，對準裝置使基板支撐設備向右移動所計算的第二預定距離(參見第14圖(c))。在此，如上所述，由於第二預定距離是(環的內徑減去基板支撐設備的外徑)/2，因此基板支撐設備可相對於環在x軸上居中。
接下來，根據第9圖的操作403，對準裝置使基板支撐設備向右移動第一預定距離，以與環的一個表面接觸(參見第14圖(d))。根據第9圖的操作404，對準裝置使基板支撐設備向左移動所計算的第二預定距離(參見第14圖(e))。基板支撐設備可相對於環在x軸上居中。
對準裝置現在可使基板支撐設備在y軸上居中。首 先，根據第9圖的操作405，對準裝置使基板支撐設備沿第三方向(即，沿y軸方向)移動第一預定距離。在一個較佳實施例中，第一預定距離是(環的內徑減去基板支撐設備的外徑)/2或更大，以使基板支撐設備可與環的一側接觸(參見第14圖(f))。接下來，根據第9圖的操作406，對準裝置使基板支撐設備沿第四方向(即沿-y軸方向)移動第二預定距離(參見第14圖(g))。基板支撐設備可相對於環在y軸上居中。根據第9圖的操作407，對準裝置使基板支撐設備沿第四方向(即，沿-y軸方向)移動第一預定距離(參見第14圖(h))。基板支撐設備可與環的一側接觸。最後，根據第9圖的操作408，對準裝置使基板支撐設備沿第三方向(即，沿y軸方向)移動第二預定距離(參見第14圖(i))。基板支撐設備可相對於環在y軸上居中。
這樣，基板支撐設備的居中可包括x軸居中和y軸居中。使基板支撐設備在四個方向(x軸方向、-x軸方向、y軸方向、-y軸方向)上居中，從而使基板支撐設備與環之間的間隙為恆定值。這樣，基板支撐件與環之間的間隙的徑向長度在間隙的整個截面上可以是恆定的。間隙的恆定徑向長度可在間隙的整個截面上在(第7圖的)反應空間5中的氣體與流入(第7圖的)下部空間10的填充氣體之間保持一致的壓力，並且可防止反應空間中的氣體進入下部空間10。
第15圖是居中位置錯位的基板支撐設備的另一個示例的視圖。與第12圖不同的是，第15圖示出了一種在基板支撐設備3向右偏心時使基板支撐設備3居中的方法。
在圖的左側和右側中，基板支撐設備3與環8之間的間隙G的寬度分別為A2和B2(其中A2和B2是非零常數)。
因此，建立了關係式D=A2+B2+C。
基板支撐設備3相對於環8不居中，並且第15圖的基板支撐設備3向圖的右側偏置(即，B2<A2)。
在此示例中，將說明第一預定距離大於或等於(環的內徑D減去基板支撐設備的外徑C)/2但小於A2的情況。
第16A圖至第16D圖示出了使用第9圖的基板處理方法使第15圖的基板支撐設備3相對於環8居中的過程。
為了便於說明，在下文中，第一方向是-x軸方向(圖中的左側)，第二方向是x軸方向(圖中的右側)，第一預定距離為m((D-C)/2<m<A2)，第二預定距離為(D-C)/2。
參考第9圖和第16A圖，根據第9圖的操作401，使基板支撐設備3沿第一方向(向左方向)移動第一預定距離m。
在此示例中，由於m<A2，因此在操作401中，即使基板支撐設備3向左移動m，基板支撐設備3也不會與環8接觸。由於在基板支撐設備3移動時基板支撐設備3不推動環8，因此環8可能不移動。即，在左側，從環8的外壁至臺階S的距離e不變。
另外，在左側，基板支撐設備3與環8之間的間隙可為(A2-m)，而在右側，基板支撐設備3與環8之間的間隙可為(B2+m)。
接下來參考第9圖和第16B圖，根據第9圖的操作 402，使基板支撐設備3沿第二方向(向右方向)移動第二預定距離((D-C)/2)。
在右側，基板支撐設備3與環8之間的間隙為(B2+m)，大於第二預定距離，使得即使在操作402期間基板支撐設備3與環8也不相互接觸。因此，環8的位置不變。因此，即使在施行了操作402之後，在左側，從環8的外壁至臺階S的距離仍然是e。
此外，由於基板支撐設備3的移動，在左側，基板支撐設備3與環8之間的間隙是A2-m+(D-C)/2，而在右側，基板支撐設備3與環8之間的間隙是B2+m-(D-C)/2。
即，藉由操作401和402，不能使第15圖的基板支撐設備3在x軸上相對於環8居中。
只需藉由施行第9圖的操作401和402就能使第12圖的基板支撐設備3在x軸上相對於環居中，但是能夠看出，藉由這些操作不能使第15圖的基板支撐設備在x軸上相對於環居中。這是因為，在第12圖中，第一預定距離m大於基板支撐設備3與環8之間的距離A1，但是在第15圖中，第一預定距離m小於基板支撐設備3與環8之間的距離A2。
在第15圖的情況下，至少有四種方式可使基板支撐設備3相對於環8居中。
首先，由於B2<(D-C)/2<A2<(D-C)(∵D=A2+B2+C且B2<A2)，因此第一預定距離m設定為(D-C)。由於A2<m，因此藉由第9圖的操作401，基板支撐設備3總是與環8接 觸，並且可藉由第9圖的操作402使其居中。
但是，在如第16A圖至第16D圖中那樣設置A2>m時，可按如下方式藉由施行第9圖的操作403和404來使基板支撐設備居中。
參考第9圖和第16C圖，根據第9圖的操作403，使基板支撐設備3沿第二方向(向右方向)移動第一預定距離m。
在此示例中，由於假定第一預定距離m大於(D-C)/2，因此在操作403期間，基板支撐設備3在移動距離B2+m-(D-C)/2之後與環8接觸，並且可在保持與環8接觸的同時進一步移動剩餘距離m-(B2+m-(D-C)/2)=(D-C)/2-B2。因此，環8可在保持與基板支撐設備3接觸的同時沿基板支撐設備3的移動方向(即，向右方向)移動((D-C)/2-B2)。
因此，在右側，從環8的外壁至臺階的距離為e-((D-C)/2-B2)。對應地，在左側，從環8的外壁至臺階S的距離為e+(D-C)/2-B2。
另外，在右側，基板支撐設備3與環8之間的間隙可為0，而在左側，基板支撐設備3與環8之間的間隙可為(D-C)。
接下來參考第9圖和第16D圖，根據第9圖的操作404，使基板支撐設備3沿第一方向(向左方向)移動第二預定距離((D-C)/2)。
在第9圖的操作404中，由於基板支撐設備3在移動時不推動環8，因此環8的位置不變。因此，即使在施行了操作404之 後，在右側，從環8的外壁至臺階S的距離仍然是e-(D-C)/2+B2。
此外，由於基板支撐設備3的移動，在左側，基板支撐設備3與環8之間的間隙是(D-C)/2，而在右側，基板支撐設備3與環8之間的間隙也是(D-C)/2。
即，藉由第9圖的操作401和402不能使第15圖的基板支撐設備相對於環8在x軸上居中，但是可藉由第9圖的操作403和404使其居中。
如上所述，在施行操作401至404之後，基板支撐設備3的最終位置(即，第16D圖中的位置)與基板支撐設備3的初始位置(即第15圖中的位置)相同。但是，藉由比較第15圖和第16D圖能夠看出，相對於環8向右偏置的基板支撐設備3藉由第9圖的操作401至404也可變為居中。這是因為，在操作401和403期間，基板支撐設備3改變了環8的位置。實際上，能夠看出，與第15圖的環8相比，第16D圖的環8向右移動了(D-C)/2-B2。
即，本揭露藉由校正環8的位置而不是校正基板支撐設備3的位置使基板支撐設備3相對於環8居中。
如上所述，由於腔室和反應器中的元件之間的熱膨脹差異，可能在反應器中的元件之間發生失配。結果，反應器中基板支撐設備的居中位置可能錯位。為了防止這種情況，可在基板處理過程期間針對一或多個反應器週期性地施行上述基板處理方法(例如第9圖的方法)。
第17圖示意性地示出了用於週期性地使基板支撐設 備居中的基板處理方法的一個示例。
在此實施例中，基板處理方法可在一個反應器中施行，或者可在兩個或更多反應器中施行。另外，當在兩個或更多反應器中施行此實施例的基板處理方法時，可在兩個或更多反應器中同時地或在不同時間施行基板處理方法。
首先，在操作1201中，可對一或多個基板施行一系列處理或複數個系列的處理。基板處理可包括沉積、蝕刻或清潔。接下來，根據操作1202，可使基板支撐設備相對於環居中。在一實施例中，可在基板處理設備的空閒時段內施行操作1202。在另一個實施例中，基板處理設備可施行操作1202，然後有空閒時段。隨後，可重複相同的過程。
如上所述，基板處理方法的應用目標不限於用於處理一個基板的一個反應器。在一些示例中，基板處理方法可用於一次處理複數個基板(即，一批基板)的批量反應器(即，多個反應器)。
第18圖示意性地示出了用於週期性地使複數個反應器中的基板支撐設備居中的基板處理方法的一個示例。例如，週期可以是幾小時、幾天或幾年。
首先，在操作1301中，可在一批基板上施行一系列處理或複數個系列的處理。基板處理可包括沉積、蝕刻或清潔。通常，一批基板包括25張基板，但是本揭露不限於此。例如，根據裝置操作者的操作計畫，一批基板可以是10至200張、50至150張等。
接下來，根據操作1302，可使基板支撐設備相對於 環居中。通常，在完成一批基板的處理之後，基板處理設備進入空閒時段。在一實施例中，可在空閒時段期間施行操作1302。在另一個實施例中，在操作1301中對一批基板進行處理之後，在操作1302中，基板處理設備可對基板處理設備立即進行居中操作，然後可有空閒時段。在空閒時段內，可施行形成用於下一個批次的反應器環境的操作。例如，可對下一批次的電漿處理施行電漿穩定化操作，如在申請人ASM的美國專利號9,972,490中所述。
在操作1303中，可在另一批基板上施行一系列處理或複數個系列的處理。接下來，在操作1304中，可使基板支撐設備相對於環居中。
隨後，可重複相同的過程。
第19圖是根據包括兩個或更多反應器的實施例的基板處理設備的視圖。
在第19圖中，基板處理設備可包括對準裝置14和位於基板支撐設備3的下部的對準裝置支撐模組61。在第20圖中示意性地示出了對準裝置14的一個示例。對準裝置14可使用X-Y平臺實現基板支撐設備相對於環的居中。例如，如上所述，基板支撐設備可沿+X、-X、+Y和-Y方向移動以實現居中。另外，對準裝置14可連接至控制器15(在第7圖中示出)，並且可藉由來自控制器的命令自動對準基板支撐設備。在一種變化形式中，對準裝置14可手動對準基板支撐設備。
在第19圖中，基板處理設備可更包括設置在對準裝 置14下的對準裝置支撐模組61。在第21圖中示意性地示出了對準裝置支撐模組61。對準裝置支撐模組61可包括用於沿垂直方向移動基板支撐設備的驅動馬達11(在第7圖中示出)。
第20圖示意性地示出了對準裝置14的一個示例。對準裝置14可包括插入部HH，(第7圖的)基板支撐設備3可插入到插入部HH中。對準裝置14可更包括可伸縮部分插入部BB，(第7圖的)可伸縮部分12可安裝在可伸縮部分插入部BB上。另外，對準裝置14還可包括冷卻器2700。當基板支撐設備插入到對準裝置14中時，冷卻器2700可防止對準裝置14被加熱的基板支撐設備加熱，從而防止X軸馬達(未示出)、Y軸馬達(未示出)等元件被加熱。
根據本揭露的基板處理方法和基板處理設備，可藉由調節基板支撐設備與環之間的距離來提高膜厚度的均勻度。另外，在因基板處理設備的高溫製程而導致元件之間失配以及基板支撐設備偏心的情況下，可使基板支撐設備相對於環居中。另外，根據本揭露，只需利用(第7圖的)對準裝置14和(第7圖的)控制器15就能輕鬆、快速地進行居中操作，而無需使用獨立的偵錯工具(例如感測器)來測量基板支撐設備與環之間的距離。
應理解的是，本文說明的實施例應僅視為說明性的，而不是用於限制目的。每個實施例中的特徵或形式的說明通常應視為可用於其它實施例中的其它類似特徵或形式。雖然在上文中參照附圖說明了一或多個實施例，但是本領域普通技術人員應理解，在不脫離如所附申請專利範圍限定的本揭露的精神和範圍的前 提下，可在形式和細節上做出各種變化。
1:第一進氣口
2:供氣裝置
3:基板支撐設備
4:射頻桿
5:反應空間
6、7:排氣裝置
8:環
9:第二進氣口
10:下部空間
11、19:驅動馬達
12:可伸縮部分
12a:第一可伸縮部分
12b:第二可伸縮部分
13:下主體
16:上主體
17:腔室上壁
18:下主體支撐件
20:腔室下壁
G:間隙

Claims (15)

  1. 一種基板處理方法，包括：使一基板支撐設備沿一第一方向移動一第一預定距離的一第一操作；使該基板支撐設備沿一第二方向移動一第二預定距離的一第二操作；使該基板支撐設備沿該第二方向移動該第一預定距離的一第三操作；以及使該基板支撐設備沿該第一方向移動該第二預定距離的一第四操作，其中該第二方向與該第一方向相反，該方法更包括：使該基板支撐設備沿一第三方向移動該第一預定距離的一第五操作；使該基板支撐設備沿一第四方向移動該第二預定距離的一第六操作；使該基板支撐設備沿該第四方向移動該第一預定距離的一第七操作；以及使該基板支撐設備沿該第三方向移動該第二預定距離的一第八操作，其中該第四方向垂直於該第一方向和該第二方向，並且與該第三方向相反，其中，該基板處理設備更包括圍繞該基板支撐設備的一環，並且 在該環與該基板支撐設備之間存在一間隙，其中，該環在該第一操作至該第八操作中的至少一個期間藉由該基板支撐設備的移動而與該基板支撐設備接觸，並且配置以在保持與該基板支撐設備接觸的同時沿該基板支撐設備的一移動方向移動。
  2. 如申請專利範圍第1項所述之基板處理方法，其中，該第一預定距離大於或等於(該環的一內徑減去該基板支撐設備的一外徑)/2。
  3. 如申請專利範圍第2項所述之基板處理方法，其中，該第一預定距離小於或等於(該環的該內徑減去該基板支撐設備的該外徑)。
  4. 如申請專利範圍第1項所述之基板處理方法，其中，該第二預定距離為(該環的一內徑減去該基板支撐設備的一外徑)/2。
  5. 如申請專利範圍第4項所述之基板處理方法，其中，在施行該第一操作至該第八操作之後，該間隙的一徑向長度在該間隙的整個截面上是恆定的。
  6. 一種包括複數個反應器的基板處理設備的基板處理方法，其中，每個該反應器包括：一上主體；一基板支撐設備；以及一環，圍繞該基板支撐設備並設置在該基板支撐設備與該上主體之間，並且 該上主體和該基板支撐設備形成一反應空間，該基板支撐設備的一下部區域形成一下部空間，在該環與該基板支撐設備之間存在一間隙，並且該反應空間與該下部空間藉由該間隙相互連通，該基板處理方法包括：使該基板支撐設備相對於該環居中，使該基板支撐設備相對於環居中的該操作更包括：使該基板支撐設備沿一第一方向移動一第一預定距離的一第一操作；使該基板支撐設備沿一第二方向移動一第二預定距離的一第二操作；使該基板支撐設備沿該第二方向移動該第一預定距離的一第三操作；使該基板支撐設備沿該第一方向移動該第二預定距離的一第四操作；使該基板支撐設備沿一第三方向移動該第一預定距離的一第五操作；使該基板支撐設備沿一第四方向移動該第二預定距離的一第六操作；使該基板支撐設備沿該第四方向移動該第一預定距離的一第七操作；以及使該基板支撐設備沿該第三方向移動該第二預定距離的一第八操作， 其中該第二方向與該第一方向相反，該第四方向與該第一方向和該第二方向垂直，並且與該第三方向相反，其中，該環安置在該上主體上以相對該上主體可滑動。
  7. 如申請專利範圍第6項所述之基板處理方法，其中，該環安裝為可在該基板支撐設備的一推力下移動。
  8. 如申請專利範圍第6項所述之基板處理方法，其中，每個該反應器更包括：一對準裝置，移動該基板支撐設備；以及一控制器，連接至該對準裝置並控制該基板支撐設備的移動，其中該基板處理方法更包括：在該第一操作之前，向該控制器輸入該環的一內徑和該基板支撐設備的一外徑。
  9. 如申請專利範圍第8項所述之基板處理方法，其中，該控制器配置以使用輸入的該環的該內徑和該基板支撐設備的該外徑來計算該第一預定距離和該第二預定距離。
  10. 如申請專利範圍第6項所述之基板處理方法，其中，該基板處理設備一次處理一批基板，並且該基板處理方法更包括：對該批基板進行一系列或複數個系列的處理；使該基板支撐設備相對於該環居中；對另一批基板進行一系列或複數個系列的處理；以及重複地使該基板支撐設備相對於該環居中。
  11. 如申請專利範圍第10項所述之基板處理方法， 其中，對於每個該反應器，使該基板支撐設備相對於該環居中的該操作是同時進行的或在不同時間進行的。
  12. 如申請專利範圍第11項所述之基板處理方法，其中，使該基板支撐設備相對於該環居中的該操作是在每個該反應器的一空閒時段內進行的。
  13. 如申請專利範圍第6項所述之基板處理方法，其中，每個該反應器更包括：一第一進氣口，將氣體引入該反應空間；和一第二進氣口，將氣體引入該下部空間，其中，該環藉由調節該環與該基板支撐設備之間的一間隙來控制該反應空間與該下部空間之間的一壓力平衡。
  14. 如申請專利範圍第13項所述之基板處理方法，其中，該第二進氣口調節引入該下部空間的氣體量，以防止該反應空間中的該氣體通過間隙被引入該下部空間。
  15. 如申請專利範圍第13項所述之基板處理方法，其中，藉由使該基板支撐設備相對於該環居中，該間隙的一徑向長度在該間隙的整個截面上是恆定的，從而防止該反應空間中的該氣體被引入該下部空間中。
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