TW202003907A - 氣體分佈系統及包含該系統的反應器系統 - Google Patents

氣體分佈系統及包含該系統的反應器系統 Download PDF

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TW202003907A
TW202003907A TW108109149A TW108109149A TW202003907A TW 202003907 A TW202003907 A TW 202003907A TW 108109149 A TW108109149 A TW 108109149A TW 108109149 A TW108109149 A TW 108109149A TW 202003907 A TW202003907 A TW 202003907A
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桑帝 席利拉姆
蘇俊威
拉克 凡 特蘭
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荷蘭商Ａｓｍ 智慧財產控股公司
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Abstract

本發明揭示一種氣體分佈系統，一種包括該氣體分佈系統之反應器系統，以及使用該等氣體分佈系統及反應器系統之方法。該氣體分佈系統可用於氣相反應器系統中以獨立地監測及控制耦接至反應腔室之氣體分佈系統之複數個通道中的氣體流動速率。

Description

氣體分佈系統及包含該系統的反應器系統
本揭示內容大致係關於氣相反應器及系統。更特定言之，本揭示內容係關於用於氣相反應器之氣體分佈系統，包括氣體分佈系統之反應器系統，以及使用該等氣體分佈系統及反應器系統之方法。
可將諸如化學氣相沉積(CVD)、電漿增強型CVD(PECVD)、原子層沉積(ALD)等等之氣相反應器用於包括在基板表面上沉積及蝕刻材料的各種應用中。舉例來說，可使用氣相反應器於在基板上沉積及/或蝕刻層，以形成半導體裝置、平板顯示裝置、光伏打裝置、微機電系統(MEMS)等等。
典型的氣相反應器系統包括一反應器，該反應器包括一反應腔室、流體耦接至該反應腔室之一或多個前驅體氣體源、流體耦接至該反應腔室之一或多個載氣及/或沖洗氣體源、將氣體(例如，前驅體氣體及/或載氣或沖洗氣體)遞送至該反應腔室之一氣體分佈系統、及流體耦接至該反應腔室之一排氣源。
一般而言，希望對於跨越基板之表面具有均勻膜性質(例如，膜厚度及電阻率)及/或對於任何期望的變化進行控制。已開發各種氣體分佈系統來嘗試達成均勻或可控制的膜性質。舉例來說，已開發包括設置於反應腔室內之多個通口(例如，5個)或噴嘴的氣體分佈系統來提高跨越基板表面之膜性質的均勻度。在此等實例中，到各通道之流動速率可使用針閥來調整。雖然此技術對於一些應用相當有效，但此等系統可能無法適當地解決膜性質的期望均勻度及/或可控制性，尤其係在基板邊緣處或靠近基板邊緣處。另外，使用針閥會產生不期望的顆粒 - 例如，歸因於閥組件的機械磨蝕。此外，一或多種前驅體的流量可能相當不穩定，尤其當於氣體之間切換時。
隨著形成於基板表面上之特徵的尺寸減小，控制諸如膜厚度及電阻率之膜性質變得愈來愈重要。此外，可能希望獨立地調整膜性質；例如，獨立地調整使用氣相反應器沉積之層(諸如使用此等反應器生長之磊晶層)中之膜厚度均勻度及/或電阻率。因此，需要改良的氣體分佈系統、包括改良的氣體分佈系統之反應器系統、及使用該等氣體分佈及反應器系統之方法。
本揭示內容之各種具體例係關於氣體分佈系統，包括氣體分佈系統之反應器系統，及使用該等氣體分佈及反應器系統之方法。雖然於下文更詳細地論述本揭示內容之各種具體例解決先前氣體分佈系統及反應器系統之缺點的方式，但一般而言，揭示內容之各種具體例提供氣體分佈系統，該等系統可提供至氣體分佈系統之個別通道之氣體流動速率的改良控制，提供至氣體分佈系統之一或多個通道之氣體之流量及/或流量比的動態反饋，及/或提供氣體分佈系統之各通道中之氣體之流動速率及/或流量比的改良穩定性。此外，例示性的系統及方法容許微調提供至反應腔室及/或基板表面的反應物。此外，例示性的氣體分佈系統容許獨立調整諸如膜厚度、膜厚度均勻度、及膜電阻率的膜性質。
根據揭示內容之例示性具體例，一種氣體分佈系統包括第一氣體供給管線；耦接至該第一氣體供給管線之第一氣體歧管，其中該第一氣體歧管包括複數個第一氣體出口；複數個第一氣體流量感測器，其中該複數個第一氣體流量感測器中之至少一者耦接至該複數個第一氣體出口之各者；複數個第一氣體閥，其中該複數個第一氣體閥中之至少一者耦接至該複數個第一氣體流量感測器各者之出口；及選擇性地耦接至該複數個第一氣體閥之各者的第一氣壓控制排氣管線。例示性的氣體分佈系統亦可包括第二氣體供給管線；耦接至該第二氣體供給管線之第二氣體歧管，其中該第二氣體歧管包括複數個第二氣體出口；複數個第二氣體流量感測器，其中該複數個第二氣體流量感測器中之至少一者耦接至該複數個第二氣體出口之各者；複數個第二氣體閥，其中該複數個第二氣體閥中之至少一者耦接至該複數個第二氣體流量感測器各者之出口；及選擇性地耦接至該複數個第一氣體閥之各者的第二氣壓控制排氣管線。根據本揭示內容之氣體分佈系統可類似地包括如關於第一及第二氣體管線所描述之三個或更多個氣體管線及相應組件。根據具體例之例示性態樣，氣體分佈系統包括複數個第一及/或第二氣體選擇閥，其中該複數個第一及/或第二氣體選擇閥之各者的入口分別耦接至第一或第二氣體閥之一者的出口及該複數個第一及/或第二氣體選擇閥之各者的出口分別耦接至第一或第二氣壓控制排氣管線的入口。第一及/或第二氣體選擇閥亦可選擇性地耦接至反應腔室。此組態容許於氣體(例如，前驅體氣體)之間快速切換，及有利於氣體之受控流動至反應腔室中及基板表面上。使用如文中所述之流量控制器可容許獨立控制至氣體分佈系統之一或多個通道(更詳細說明於下文)的氣體流動速率，其繼而可容許微調於反應腔室內使用該等系統及/或反應物濃度分佈沉積之膜的各種性質。
根據揭示內容之額外例示性具體例，氣相反應器系統包括一或多個如本文中所描述之氣體分佈系統。例示性的系統亦可包括耦接至反應腔室的排氣(例如，真空)源，流體耦接至一或多個第一氣體通道的第一氣體源，及流體耦接至一或多個第二氣體通道的第二氣體源。系統可包括額外的氣體及/或排氣源。
根據揭示內容之又其他的例示性具體例，一種將氣相反應物提供至基板表面之方法包括以下步驟：提供氣相反應器系統，提供如文中所述之氣體分佈系統，於反應腔室內提供基板，及使基板暴露至來自第一氣體源之第一氣體及來自第二氣體源之第二氣體。例示性方法可進一步包括操縱耦接至一或多個第一氣體通道的一或多個閥及/或操縱耦接至一或多個第二氣體通道的一或多個控制閥。例示性方法亦可包括以下步驟：提供來自第一氣體源之第一氣體及來自第二氣體源之第二氣體中之一或多者的不對稱設置，以例如，調整(例如，獨立地)膜性質，諸如跨越基板表面(包括基板之邊緣區域)之膜厚度、膜厚度均勻度、及膜電阻率等等。
以下提供之例示性具體例的說明僅係例示性且僅係意欲用於說明之目的；以下說明不意欲限制揭示內容或申請專利範圍之範疇。此外，引述具有所述特徵之多個具體例不意欲排除具有額外特徵之其他具體例或納入所述特徵之不同組合的其他具體例。
本揭示內容大致係關於氣體分佈系統，包括氣體分佈系統之反應器系統，以及使用該等氣體分佈系統及反應器系統之方法。可使用如文中所述之氣體分佈系統及包括氣體分佈系統之反應器系統來在氣相反應器中加工基板，諸如半導體晶圓。舉例來說，可使用文中所述之系統來於基板表面上形成或生長磊晶層(例如，雙組分及/或摻雜半導體層)。
如文中所用，「基板」係指具有材料可沉積於其上之表面的任何材料。基板可包括塊狀材料諸如矽(例如，單晶矽)或可包括覆蓋塊狀材料的一或多個層。此外，基板可包括各種表面形態，諸如形成於基板層之至少一部分之內或之上的溝渠、通孔、線條等等。
如更詳細陳述於下文，使用如文中所述之例示性氣體分佈系統係有利的，因其容許獨立計量及控制至反應腔室之各種輸入位點(例如，至凸緣內之多個入口位置，更詳細說明於下文)的氣體流動速率。氣體及流動速率之獨立控制可繼而容許獨立調整使用包括氣體分佈系統之反應器系統所形成之膜的膜性質。舉例來說，可使用例示性氣體分佈系統來獨立地調整，例如，基板上之磊晶形成層的電阻率及膜厚度(或厚度均勻度)。另外或替代地，可使用例示性氣體分佈系統來補償原本將於反應器系統之反應腔室內發生之氣體流量變化、耗損率變化、自摻雜、或其組合。舉例來說，可使用各種氣體之獨立控制來補償原本可能會於一或多個膜性質中引起不均勻的邊緣效應及/或旋轉基板。此外，例示性氣體分佈系統可於各氣體通道中提供氣體流動速率之即時反饋。例示性氣體分佈系統可放大至任何期望數目的氣體通道。另外，若需要，本揭示內容之例示性氣體分佈系統可用於相當高的氣體流動速率(例如，大於2 SLM之通過各通道的氮)及/或可於相當高(例如，接近大氣)壓力下操作。另外，即使當切換提供至反應器之氣體時，例示性氣體分佈系統可提供相當穩定的流動速率。此外，如更詳細論述於下文，例示性系統可降低當氣體進入反應腔室時與進料管線中氣體之大體積相關聯的記憶效應。文中所述之系統及方法的此等及其他特徵可尤其有用於在基板上沉積高品質界面層，同時使原本可能歸因於，例如，在進料管線之怠體積中之殘餘氣體而形成的缺陷減至最小。
現在轉到圖式，圖1繪示例示性反應器系統100。反應器系統100可用於各種應用，諸如，比方說，化學氣相沉積(CVD)、電漿增強型CVD(PECVD)、原子層沉積(ALD)、清潔製程、蝕刻製程等等。雖然結合磊晶反應器系統將例示性具體例說明於下文，但除非另外陳述，否則具體例及發明不因此受限。
在所繪示之實例中，反應器系統100包括可選之基板處置系統102、反應腔室104、氣體分佈系統106、及設置於反應腔室104與基板處置系統102之間之可選的壁108。系統100亦可包括第一氣體源112、第二氣體源114、及排氣源110。雖然被繪示為具有兩個氣體源112、114，但反應器系統100可包括任何適宜數目的氣體源。氣體源112、114可包括，例如，前驅體氣體，諸如三氯矽烷、二氯矽烷、矽烷、二矽烷、及三矽烷；摻雜劑源，諸如包含As、P、C、Ge、及B之氣體；及氣體之混合物，包括氣體與諸如氫、氮、氬等等之載氣的混合物。另外或替代地，第一氣體源112及第二氣體源114中之一者可包括蝕刻劑，諸如氯化氫。舉例來說，例示性反應器系統可包括至少兩個前驅體氣體源及視情況一或多個載氣及/或沖洗氣體源。反應器系統100可包括任何適宜數目的反應腔室104及基板處置系統102。舉例來說，反應器系統100之反應腔室104包括交叉流、冷壁磊晶反應腔室。包括水平流動反應器之例示性反應器系統為可獲自ASM的一系統。
在反應器系統100之操作期間，基板，諸如半導體晶圓(未繪示)自(例如)基板處置系統102轉移至反應腔室104。一旦基板經轉移至反應腔室104，來自氣體源112、114之一或多種氣體(諸如前驅體、摻雜劑、載氣、及/或沖洗氣體)即經由氣體分佈系統106引入至反應腔室104中。如更詳細陳述於下文，可使用氣體分佈系統106於基板加工期間計量及控制來自第一氣體源112及第二氣體源114之一或多種氣體的氣體流動速率。
圖2示意性地繪示及圖3-5進一步繪示根據揭示內容之例示性具體例適合用作氣體分佈106的氣體分佈系統200。氣體分佈系統200包括耦接至第一氣體源112之第一氣體供給管線202及耦接至第二氣體源114之第二氣體供給管線204。當提到氣體分佈系統200之氣體管線及組件時，術語「耦接」係指流體耦接，且除非另外陳述，管線或組件無需直接地流體耦接，而是氣體分佈系統200可包括其他介入元件，諸如閥、錶等等。
繼續參照圖2-5，氣體分佈系統200包括耦接至第一氣體供給管線202之第一氣體歧管206及耦接至第二氣體供給管線204之第二氣體歧管208。第一氣體歧管206包括複數個第一氣體出口210-218。類似地，第二氣體歧管208包括複數個第二氣體出口220-228。第一氣體歧管206及第二氣體歧管208係經組態以自一或多個氣體管線(例如，第一及第二氣體管線202、204)接收氣體及將氣體分佈至一或多個通道(其分別部分地由第一氣體出口208-218及第二氣體出口220-228所界定)中。在所繪示之實例中，第一及第二氣流之各者被分成五個氣體通道。雖然被繪示為各具有五個第一氣體出口208-218及第二氣體出口220-228，但根據本揭示內容之氣體分佈系統可包括對應於各別氣體之通道數目之任何適宜數目的第一、第二、及/或其他氣體出口。
氣體分佈系統200包括耦接至第一及第二氣體出口210-228之複數個流量感測器230-248。在所繪示之實例中，各第一及第二氣體出口210-228耦接至單個流量感測器230-248。然而，在一些情況中，可能希望有一些之氣體出口為未耦接至流量感測器及/或有一些氣體出口為耦接至多於一個流量感測器。可使用流量感測器230-248來向使用者提供各通道即時及/或歷史流動速率資訊，例如，使用圖形使用者介面。另外或替代地，流量感測器230-248可耦接至控制器(例如，控制器318)及耦接至第一氣體閥250-258及第二氣體閥260-268，以提供通過閥之受控的氣體流動速率。雖然被繪示為位在閥250-268之上游，但流量感測器230-248可另外或替代地設置於閥250-268之下游。例示性的流量感測器230-248係質量流量計。經由將流量感測器設置於各氣體通道中，可與氣體組成無關地獨立測量及控制氣體通過各通道的流動速率。
第一氣體閥250-258及第二氣體閥260-268可包括用來計量氣體流量的任何適宜裝置。根據揭示內容之各種具體例，第一氣體閥250-258及第二氣體閥260-268各包括比例閥，諸如電磁閥，諸如可獲自Brooks Instruments之彼等閥。如圖3及5中所繪示，氣體分佈系統200可包括複數個驅動器334-354以操縱各第一氣體閥250-258及第二氣體閥260-268至期望位置，例如，以控制各通道中之流動速率。根據揭示內容之進一步的例示性具體例，氣體分佈系統200包括複數個第一氣體選擇閥270-278及290-298及複數個第二氣體選擇閥280-288及300-308。可使用第一氣體選擇閥270-278及290-298及第二氣體選擇閥280-288及300-308來切換來自第一氣體源112之氣體於排氣管線310(諸如壓力控制排氣管線)與反應腔室314之間的流量(例如，氣體通過各氣體通道的總流量)。類似地，可使用第二氣體選擇閥280-288及300-308來切換來自第二氣體源114之氣體於排氣管線312(例如壓力控制排氣管線)與反應腔室314之間的流量(例如，氣體通過各氣體通道的總流量)。換言之，來自源112及114之氣體可連續地流動及於壓力控制排氣管線310、312與反應腔室314之間切換。舉例來說，在使第一氣體自第一氣體源112流動至反應腔室314前，第一氣體選擇閥270-278可係打開的及第一氣體選擇閥290-298可係關閉的，以容許第一氣體自第一氣體源112經由一或多個(例如，各第一)氣體通道流動至第一氣壓控制排氣管線310。類似地，在使第二氣體自第二氣體源114流動至反應腔室314前，第二氣體選擇閥280-288可係打開的及第二氣體選擇閥300-308可係關閉的，以容許第二氣體自第二氣體源114經由一或多個(例如，各第二)氣體通道流動至第二氣壓控制排氣管線312。根據揭示內容之各種具體例，第一氣壓控制排氣管線310內及/或第二氣壓控制排氣管線312內的壓力可維持在反應腔室314內的壓力附近(例如，在其± 10%、± 5%、± 2.5%、或± 1%內)。當於氣體之間切換(例如，於前驅體之間及/或於前驅體氣體與沖洗氣體之間切換)時，此容許氣體的穩定流動速率(例如，較少記憶效應、平順過渡、及原本可能存在之壓力擾動的效應降低)。可使用壓力傳感器320、322來分別量測第一氣壓控制排氣管線310及第二氣壓控制排氣管線312內之壓力。背壓控制閥326、328可耦接至壓力傳感器320、322以控制第一氣壓控制排氣管線310及第二氣壓控制排氣管線312內之壓力。類似地，壓力傳感器324可用來測量反應腔室314內之壓力且可用來使用可控制閥328控制反應腔室314內之壓力。此外，可使用由壓力傳感器324所測得之壓力來向控制器318提供設定點作為第一氣壓控制排氣管線310及第二氣壓控制排氣管線312之壓力設定點。除非另外註解，本文中記載之所有可控制閥可係比例閥，諸如電磁閥。
第一氣體選擇閥270-278及290-298及第二氣體選擇閥280-288及300-308可經由凸緣316耦接至反應腔室314。第一及第二氣體選擇閥270-308可係表面安裝於凸緣316、或另一管線(例如，管)上，且可使用適當連接器來將選擇閥耦接至凸緣316。例示性凸緣316包括凸緣氣體通道以維持通道直至各別氣體離開進入反應腔室中為止。適合用作凸緣316之例示性凸緣被揭示於2014年3月18日提出申請之美國申請案序號14/218,690，標題「氣體分佈系統，包括該系統之反應器，及其使用方法(GAS DISTRIBUTION SYSTEM, REACTOR INCLUDING THE SYSTEM, AND METHODS OF USING THE SAME)」，以其內容不與本揭示相衝突之程度，引用該等內容併入本文。
氣體分佈系統200可視情況包括水分樣本面板332以注射水分感測管線。水分樣本面板可包括，例如，一或多個壓力傳感器、氣動閥、及/或限制器。在所繪示之實例中，氣體分佈系統200亦包括隔離閥402-420以容許氣體與一或多個通道隔離，例如，於加工期間，若希望不使氣體於製程期間流動通過特定通道時，或容許維修系統。例示性的氣體分佈系統200亦可包括釋放閥422、424以分別容許與第一氣體及第二氣體相關聯的通道排氣。另外或替代地，為利於沖洗通道及/或反應腔室314，氣體分佈系統200可包括惰性氣體(例如，氮氣)入口閥426及通道沖洗閥502-520。
反應腔室314可由(例如)石英形成。於切換及/或基板加工期間反應腔室314(及第一及第二氣體排氣管線)內之例示性操作壓力可在約5托(Torr)至約500托之範圍內。舉例來說，壓力可在約2毫托至約780托之範圍內。
控制器318可經組態以執行如文中所述之各種功能及/或步驟。控制器318可包括一個或微處理器、記憶元件、及/或切換元件以執行各種功能。雖然被繪示為單個單元，但控制器318可替代地包括多個裝置。舉例來說，可使用控制器來控制來自第一氣體源112及第二氣體源114之氣體的流量。特定而言，控制器318可經組態以於各通道中提供各別氣體(例如，來自第一氣體源112或第二氣體源114)之總流量的期望比率。另外或替代地，在將氣體流動引入至反應腔室中時，可使用控制器318來穩定氣體流動速率。根據揭示內容之各種實例，控制器318包括比例積分微分(PID)控制器，其容許閉環控制文中描述之各種可控制閥，包括第一氣體閥250-258及第二氣體閥260-268。利用PID閉環控制，系統200可將一或多個(例如，所有)氣體通道中之流量動態調整至設定點及/或當於氣體源之間切換時提供至反應腔室314之氣體之穩定(尤其起始的)流動速率。舉例來說，使用PID控制，可選擇各控制閥的起始設定點。然後可結合PID控制器使用來自耦接至可控制閥之各流量感測器的流動速率反饋及輸出來控制各控制閥的期望設定點(即流動速率)。
如前所指，文中描述之閥可包括電磁閥。已知電磁閥會對施加電壓呈現遲滯現象。為補償此現象，根據揭示內容之各種實例，控制器318係經組態以施加足夠的電壓來完全打開閥，然後再將電壓設置於期望流動速率的期望值。此亦可幫助減輕閥設定值的漂移。
圖6繪示可耦接至控制器318或形成其之一部分的例示性迴路600。可使用迴路600來控制用來控制通道內之氣體流動速率的各個閥(例如，各個閥250-268)。迴路600包括第一電源602、第二電源604、及耦接至閥之驅動器606。在所繪示之實例中，驅動器606轉換來自電源604之信號或基於來自質量流量計之讀數的信號(示為輸入610)，及將該信號轉換為比例電壓以控制閥608。更明確言之，可使用電源604來命令閥608完全打開或完全關閉，且可使用電源602來提供足夠電壓以完成此工作。圖7及8更詳細地繪示一些電架構，其繪示至各閥250-268之各驅動器的電源輸入。
雖然文中記述本揭示內容的例示性具體例，但應明瞭揭示內容並不因此受限。舉例而言，儘管結合各種特定組態來描述氣體分佈及反應器系統，但揭示內容未必受限於此等實例。可對文中陳述的系統及方法進行各種修改、變化、及增進，而不脫離本揭示內容之精神及範疇。
本揭示內容之標的包括各種系統、組件、及組態、及本文中所揭示之其他特徵、功能、行為、及/或性質及其任何及所有等效者的所有新穎且非顯而易見的組合及子組合。
100‧‧‧反應器系統 102‧‧‧基板處置系統 104‧‧‧反應腔室 106‧‧‧氣體分佈系統 108‧‧‧壁 110‧‧‧排氣源 112‧‧‧第一氣體源 114‧‧‧第二氣體源 200‧‧‧氣體分佈系統 202‧‧‧第一氣體供給管線 204‧‧‧第二氣體供給管線 206‧‧‧第一氣體歧管 208‧‧‧第二氣體歧管 210‧‧‧第一氣體出口 212‧‧‧第一氣體出口 214‧‧‧第一氣體出口 216‧‧‧第一氣體出口 218‧‧‧第一氣體出口 220‧‧‧第二氣體出口 222‧‧‧第二氣體出口 224‧‧‧第二氣體出口 226‧‧‧第二氣體出口 228‧‧‧第二氣體出口 230‧‧‧流量感測器 232‧‧‧流量感測器 234‧‧‧流量感測器 236‧‧‧流量感測器 238‧‧‧流量感測器 240‧‧‧流量感測器 242‧‧‧流量感測器 244‧‧‧流量感測器 246‧‧‧流量感測器 248‧‧‧流量感測器 250‧‧‧第一氣體閥 252‧‧‧第一氣體閥 254‧‧‧第一氣體閥 256‧‧‧第一氣體閥 258‧‧‧第一氣體閥 260‧‧‧第二氣體閥 262‧‧‧第二氣體閥 264‧‧‧第二氣體閥 266‧‧‧第二氣體閥 268‧‧‧第二氣體閥 270‧‧‧第一氣體選擇閥 272‧‧‧第一氣體選擇閥 274‧‧‧第一氣體選擇閥 276‧‧‧第一氣體選擇閥 278‧‧‧第一氣體選擇閥 280‧‧‧第二氣體選擇閥 282‧‧‧第二氣體選擇閥 284‧‧‧第二氣體選擇閥 286‧‧‧第二氣體選擇閥 288‧‧‧第二氣體選擇閥 290‧‧‧第一氣體選擇閥 292‧‧‧第一氣體選擇閥 294‧‧‧第一氣體選擇閥 296‧‧‧第一氣體選擇閥 298‧‧‧第一氣體選擇閥 300‧‧‧第二氣體選擇閥 302‧‧‧第二氣體選擇閥 304‧‧‧第二氣體選擇閥 306‧‧‧第二氣體選擇閥 308‧‧‧第二氣體選擇閥 310‧‧‧排氣管線；壓力控制排氣管線 312‧‧‧排氣管線；壓力控制排氣管線 314‧‧‧反應腔室 316‧‧‧凸緣 318‧‧‧控制器 320‧‧‧壓力傳感器 322‧‧‧壓力傳感器 324‧‧‧壓力傳感器 326‧‧‧背壓控制閥 328‧‧‧背壓控制閥；可控制閥 332‧‧‧水分樣本面板 334‧‧‧驅動器 336‧‧‧驅動器 338‧‧‧驅動器 340‧‧‧驅動器 342‧‧‧驅動器 346‧‧‧驅動器 348‧‧‧驅動器 350‧‧‧驅動器 352‧‧‧驅動器 354‧‧‧驅動器 402‧‧‧隔離閥 404‧‧‧隔離閥 406‧‧‧隔離閥 408‧‧‧隔離閥 410‧‧‧隔離閥 412‧‧‧隔離閥 414‧‧‧隔離閥 416‧‧‧隔離閥 418‧‧‧隔離閥 420‧‧‧隔離閥 422‧‧‧釋放閥 424‧‧‧釋放閥 426‧‧‧惰性氣體入口閥 502‧‧‧通道沖洗閥 504‧‧‧通道沖洗閥 506‧‧‧通道沖洗閥 508‧‧‧通道沖洗閥 510‧‧‧通道沖洗閥 512‧‧‧通道沖洗閥 514‧‧‧通道沖洗閥 516‧‧‧通道沖洗閥 518‧‧‧通道沖洗閥 520‧‧‧通道沖洗閥 600‧‧‧迴路 602‧‧‧第一電源 604‧‧‧第二電源 606‧‧‧驅動器 608‧‧‧閥 610‧‧‧輸入
當結合以下說明圖式思考時，可藉由參照實施方式及申請專利範圍而獲得對本揭示內容之例示性具體例的更完整理解。
圖1繪示根據本揭示內容之至少一例示性具體例之反應器系統。
圖2示意性地繪示根據揭示內容之至少一例示性具體例之氣體分佈系統。
圖3、4及5繪示根據揭示內容之至少一例示性具體例之氣體分佈系統的圖式。
圖6、7及8繪示根據揭示內容之至少一具體例之控制器及驅動器。
應理解，圖式中之元件係為簡單及清楚起見而繪示且未必按比例繪製。舉例而言，可相對於其他元件將圖式中之一些元件之尺寸擴大以幫助增進對所說明之本揭示內容之具體例的理解。

Claims (20)

  1. 一種氣體分佈系統，包括： 第一氣體供給管線； 第一氣體歧管，經耦接至該第一氣體供給管線，其中該第一氣體歧管包括複數個第一氣體出口； 複數個第一氣體流量感測器，其中該複數個第一氣體流量感測器中之至少一者耦接至該複數個第一氣體出口之各者； 複數個第一氣體閥，其中該複數個第一氣體閥中之至少一者耦接至該複數個第一氣體流量感測器各者之出口；及 第一氣壓控制排氣管線，經選擇性地耦接至該複數個第一氣體閥之各者。
  2. 如請求項1之氣體分佈系統，其進一步包括複數個第一氣體選擇閥，其中該複數個第一氣體選擇閥各者之入口耦接至該複數個第一氣體閥中之一者的出口，及該複數個第一氣體選擇閥各者之出口耦接該第一氣壓控制排氣管線之入口。
  3. 如請求項2之氣體分佈系統，其中該複數個第一氣體選擇閥各者之出口係選擇性地耦接至反應腔室。
  4. 如請求項1之氣體分佈系統，其進一步包括： 第二氣體供給管線； 第二氣體歧管，經耦接至該第二氣體供給管線，其中該第二氣體歧管包括複數個第二氣體出口； 複數個第二氣體流量感測器，其中該複數個第二氣體流量感測器中之至少一者耦接至該複數個第二氣體出口之各者； 複數個第二氣體閥，其中該複數個第二氣體閥中之至少一者耦接至該複數個第二氣體流量感測器各者之出口；及 第二氣壓控制排氣管線，經選擇性地耦接至該複數個第一氣體閥之各者。
  5. 如請求項4之氣體分佈系統，其進一步包括複數個第二氣體選擇閥，其中該複數個第二氣體選擇閥各者之入口耦接至該複數個第二氣體閥中之一者的出口，及該複數個第二氣體選擇閥各者之出口耦接該第二氣壓控制排氣管線之入口。
  6. 如請求項5之氣體分佈系統，其中該複數個第二氣體選擇閥各者之出口係選擇性地耦接至反應腔室。
  7. 如請求項4之氣體分佈系統，其中該複數個第二氣體閥包括比例閥。
  8. 如請求項4之氣體分佈系統，其中該複數個第二氣體閥包括電磁閥。
  9. 如請求項4之氣體分佈系統，其進一步包括凸緣。
  10. 如請求項9之氣體分佈系統，其中該複數個第一氣體閥及該複數個第二氣體閥為流體耦接至形成於該凸緣內之氣體凸緣通道。
  11. 如請求項4之氣體分佈系統，其進一步包括耦接至該複數個第一氣體閥及該複數個第二氣體閥的比例積分微分控制器。
  12. 如請求項4之氣體分佈系統，其進一步包括複數個第二氣體隔離閥，其中該複數個第二氣體隔離閥之各者耦接至該複數個第二氣體流量感測器中之一者的入口。
  13. 如請求項1之氣體分佈系統，其中該複數個第一氣體閥包括比例閥。
  14. 如請求項1之氣體分佈系統，其中該複數個第一氣體閥包括電磁閥。
  15. 一種反應器系統，其包括如請求項1之氣體分佈系統。
  16. 如請求項15之反應器系統，其進一步包括耦接至該複數個第一氣體閥的反應腔室。
  17. 如請求項16之反應器系統，其中該反應腔室內之壓力大約與該第一氣壓控制排氣管線內之壓力相同。
  18. 一種反應器系統，其包括如請求項4之氣體分佈系統。
  19. 如請求項18之反應器系統，其進一步包括耦接至該複數個第二氣體閥的反應腔室。
  20. 如請求項18之反應器系統，其進一步包括真空源，其中該第一氣壓控制排氣管線及該第二氣壓控制排氣管線耦接至該真空源。
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TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
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US20190368041A1 (en) 2019-12-05
CN110551990A (zh) 2019-12-10
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JP7440217B2 (ja) 2024-02-28
KR20190138272A (ko) 2019-12-12
US20230313377A1 (en) 2023-10-05
TWI810259B (zh) 2023-08-01
KR20240125522A (ko) 2024-08-19
KR102696045B1 (ko) 2024-08-16
US12024775B2 (en) 2024-07-02

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