CN109643652A - 用于填充间隙的方法和设备 - Google Patents

用于填充间隙的方法和设备 Download PDF

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CN109643652A
CN109643652A CN201780044443.2A CN201780044443A CN109643652A CN 109643652 A CN109643652 A CN 109643652A CN 201780044443 A CN201780044443 A CN 201780044443A CN 109643652 A CN109643652 A CN 109643652A
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substrate
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V·珀尔
W·科内鹏
B·琼布罗德
D·皮尔勒
G·范德尔斯达
铃木俊哉
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ASM Japan KK
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Abstract

提供一种通过在反应室中提供基底并进行以下操作来填充一个或多个间隙的方法：以第一剂量将第一反应物引入到所述基底上，由此在第一区域上由所述第一反应物形成不超过约一个单层；以第二剂量将第二反应物引入到所述基底上，由此在表面的第二区域上由所述第二反应物形成不超过约一个单层，其中所述第一和所述第二区域在其中所述第一和第二反应物发生反应的重叠区域中重叠，并留下其中所述第一和所述第二区域不重叠的初始未反应区域；及以第三剂量将第三反应物引入到所述基底上，所述第三反应物与残留的在所述初始未反应区域上的所述第一或第二反应物发生反应。

Description

用于填充间隙的方法和设备
技术领域
本发明总体上涉及用于制造电子装置的方法和设备。
更具体地说，本发明涉及一种用于通过在反应室中提供基底并提供沉积方法来填充在基底上制造特征期间形成的一个或多个间隙的方法和设备，所述沉积方法包括；
以第一剂量将第一反应物引入到所述基底上，由此在所述一个或多个间隙的表面的第一区域上由所述第一反应物形成不超过约一个单层；
以第二剂量将第二反应物引入到所述基底上，由此在所述一个或多个间隙的所述表面的第二区域上由所述第二反应物形成不超过约一个单层；及
允许所述第一和第二反应物发生反应。
背景技术
在基底间隙上制造集成电路期间，例如，可在基底上形成沟槽。根据特定应用，填充沟槽可采用多种形式。
基本沟槽填充过程可能存在缺点，包括在再填充期间在沟槽中形成空隙。当在完全填充之前再填充材料在沟槽顶部附近形成收缩物时，可形成空隙。此类空隙可能损害集成电路(IC)上的装置的装置隔离以及IC的总体结构完整性。不幸的是，防止在沟槽填充期间形成空隙通常可能会对沟槽的尺寸产生约束，这可能会限制装置的装置装填密度。
如果用于装置隔离的沟槽被填充，则测量装置隔离的有效性的关键参数可以是场阈值电压，即，产生连接邻近的隔离装置的寄生电流所需的电压。场阈值电压可受多种物理和材料性质的影响，例如沟槽宽度、沟槽填充材料的介电常数、基底掺杂、场植入剂量和基底偏置。
可以通过减小沟槽深度和/或使沟槽侧壁逐渐变窄来减少空隙形成，使得顶部处的开口可以比底部处更宽。减小沟槽深度的权衡可能会降低装置隔离的有效性，同时具有锥形侧壁的沟槽的较大顶部开口可能会用掉额外的集成电路的基底面。
发明内容
例如，目标是提供改进的或至少具替代性的间隙填充方法。
因此，提供一种通过在反应室中提供基底并提供沉积方法来填充在基底上制造特征期间形成的一个或多个间隙的方法，所述沉积方法包括；
以第一剂量将第一反应物引入到所述基底上，由此在所述一个或多个间隙的表面的第一区域上由所述第一反应物形成不超过约一个单层；
以第二剂量将第二反应物引入到所述基底上，由此在所述一个或多个间隙的所述表面的第二区域上由所述第二反应物形成不超过约一个单层，其中
所述第一和所述第二区域在其中所述第一和第二反应物发生反应的重叠区域中重叠，并留下其中所述第一和所述第二区域不重叠的初始未反应区域；及
以第三剂量将第三反应物引入到所述基底上，所述第三反应物与残留在所述初始未反应区域上的所述第一或第二反应物发生反应。
通过使第一和第二反应物具有使得所述反应物在间隙顶部中的重叠区域中重叠的剂量，第一和第二反应物将在间隙顶部中发生反应，从而阻止间隙顶部中的进一步反应。在其中第一和第二反应物不重叠的间隙底部的初始未反应区域中，反应物仍然可以与第三反应物发生反应，并由此从底部向上填充间隙。
根据另一实施例，提供一种半导体处理设备，例如，以提供改进的或至少具替代性的间隙填充方法。所述设备包括：
一个或多个反应室，其用于容纳基底，所述基底具有在所述基底上制造特征期间形成的间隙；
第一反应物的第一来源，其通过第一阀与所述反应室中的一个进行气体连通；及
第二反应物的第二来源，其通过第二阀与所述反应室中的一个进行气体连通；其中所述设备包括：
第三反应物的第三来源，其通过第三阀与所述反应室中的一个进行气体连通；
控制器，其可操作地连接到所述第一、第二和第三气体阀并被配置和编程成控制：
以第一剂量将第一反应物引入到所述基底上，由此在所述一个或多个间隙的表面的第一区域上由所述第一反应物形成不超过约一个单层；
以第二剂量将第二反应物引入到所述基底上，由此在所述一个或多个间隙的所述表面的第二区域上由所述第二反应物形成不超过约一个单层，
所述第一和所述第二区域在其中所述第一和第二反应物发生反应的重叠区域中重叠，并留下其中所述第一和所述第二区域不重叠的初始未反应区域；及
以第三剂量将第三反应物引入到所述基底上，所述第三反应物与残留在所述初始未反应区域上的所述第一或第二反应物发生反应。
出于概述本发明和优于现有技术而实现的优势的目的，上文中已描述本发明的某些目标和优势。当然，应理解，未必所有此类目标或优势都可以根据本发明的任一特定实施例来实现。
因此，例如，本领域的技术人员将认识到，本发明可以按实现或优化如本文中所教示或建议的一个优势或一组优势但不一定实现如本文中可能教示或建议的其它目标或优势的方式来实施或进行。
所有这些实施例都意欲在本文中所公开的本发明的范围内。本领域的技术人员根据以下参照附图的某些实施例的详细描述将清楚这些和其它实施例，本发明不限于所公开的任何特定实施例。
附图说明
下文参考某些实施例的图式来描述本文公开的本发明的这些和其它特征、方面和优点，所述实施例旨在说明而不是限制本发明。
图1A是可用于本发明的实施例中的用于填充间隙的等离子体增强型原子层沉积(plasma-enhanced atomic layer deposition，PEALD)设备的示意图。
图1B说明可用于本发明的实施例的使用流通系统(flow-pass system，FPS)的前体供应系统的示意图。
图2是根据第一实施例的用于填充间隙的方法的流程图。
图3是根据第二实施例的用于填充间隙的方法的流程图。
具体实施方式
尽管下文公开了某些实施例和实例，但本领域的技术人员将理解，本发明延伸超出了本发明具体公开的实施例和/或用途和显而易见的修改以及其等效物。因此，希望所公开的本发明的范围不应受下文所描述的特定的所公开实施例的限制。
图2是根据本发明的至少第一实施例的方法的流程图，其中在基底上制造特征期间形成的一个或多个间隙可以通过沉积方法100来填充。间隙的宽度可小于40或甚至20nm。间隙的深度可大于40、100、200或甚至400nm。
可提供一种基底，并且可提供沉积方法100，所述沉积方法100包括：
在步骤110中，以第一剂量将第一反应物引入到所述基底上，由此在所述一个或多个间隙的表面的第一区域上由所述第一反应物形成不超过约一个单层；
在步骤120中，以第二剂量将第二反应物引入到所述基底上，由此在所述一个或多个间隙的所述表面的第二区域上由所述第二反应物形成不超过约一个单层，其中
所述第一和所述第二区域在其中所述第一和第二反应物发生反应的重叠区域中重叠，并留下其中所述第一和所述第二区域不重叠的初始未反应区域；及
在步骤130中，以第三剂量将第三反应物引入到所述基底上，所述第三反应物与残留在所述初始未反应区域上的所述第一或第二反应物发生反应。
通过使第一和第二反应物具有使得所述反应物在间隙顶部中重叠的剂量，第一和第二反应物可在顶部中发生反应，从而阻止间隙顶部中的进一步反应。在其中第一和第二反应物不重叠的间隙底部中，反应物仍然可以与第三反应物发生反应，从而自下而上地填充间隙。
第一和第二反应物中的一个的剂量应该饱和(例如，相对高和/或长)，使得第一和第二反应物中的所述一个覆盖整个间隙，而第一和第二反应物中的另一个的剂量应该亚饱和(例如，相对短和/或低)，以确保第一和第二反应物仅在间隙顶部中重叠。
在引入第一、第二和/或第三反应物之后可移除多余的反应物和副产物，以避免引起污染的反应物之间的直接反应。
沉积方法100可重复多次以填充间隙，如环路140所描绘。反应可通过环路140重复1到10.000次，优选的是5到2.000次，并且最优选的是在10和1.000次之间。
如果例如间隙顶部仍被阻挡，但是仍然可以提供底部中的反应物以供反应，那么沉积方法100还可通过环路150部分地重复。还可以组合通过环路140的完整重复和通过环路150的部分重复。以此方式，可增大间隙填充方法的速度。
第一和第二反应物中的一个以饱和(例如，相对大或长剂量)引入，且第一和第二反应物中的另一个以亚饱和(例如，相对低或短剂量)引入。具有饱和剂量的反应物将深深地穿入间隙中以到达间隙底部，而具有亚饱和剂量的反应物将不会深深地穿入间隙中，并且保持处于顶部。因此，第一和第二反应物之间的反应仅在间隙顶部中发生，从而阻止间隙顶部中的进一步反应。
第一和第二反应物中的一个可为潜在生长的反应物，而第一和第二反应物中的另一个可包括低生长的反应物，所述低生长的反应物结合潜在生长的反应物提供相对低的生长。因此，第一和第二反应物之间的反应可以引起间隙顶部中的相对低的生长，使得间隙顶部在间隙底部被基本上填满之前不会被阻挡。
可引入第一和第二反应物中的一个以覆盖第一和第二区域中基本上覆盖一个或多个间隙的总表面的所述对应一个区域。第一和第二反应物中的所述一个可为潜在生长的反应物，所述潜在生长的反应物依据另一反应物提供潜在生长。
第一和第二反应物中是潜在生长的反应物的那一个可包括硅。例如，潜在生长的反应物可包括硅烷二胺，例如N,N,N',N'-四乙基硅烷胺，例如Air Liquide(法国巴黎)以名称ALOHATMSAM.24所销售的。
极低生长的反应物可包括氮，氮可任选地由等离子体活化。氮与潜在生长的反应物组合可引起间隙顶部中的相对低的生长，所述潜在生长的反应物例如硅烷二胺，如N,N,N',N'-四乙基硅烷胺。在提供潜在生长的反应物之前提供极低生长的反应物可为有利的。
第三反应物可包括高生长的反应物，所述高生长的反应物结合潜在生长的反应物提供相对高的生长。可以相对大的剂量引入第三反应物以确保第三反应物到达间隙底部，使得第三反应物可以与潜在生长的反应物在间隙底部中发生反应。第三反应物在沟槽顶部中的反应被阻断，因为第一和第二反应物可能已经在间隙顶部中进行过反应。
第三反应物可包括氧，氧可由等离子体活化。氧与硅烷二胺组合可在间隙底部引起相对高的生长，所述硅烷二胺例如N,N,N',N'-四乙基硅烷胺。
例如，可以在循环重复反应中提供N,N,N',N'-四乙基硅烷胺、N等离子体，然后提供O等离子体，以自下而上地填充间隙。替代地，可以在循环重复反应中提供N等离子体、N,N,N',N'-四乙基硅烷胺，以及O等离子体，以自下而上地填充间隙。
图3是根据本发明的至少第二实施例的方法200的流程图，其中在引入第二和第三反应物之间，在提供第三反应物之前再次将第一和第二反应物中的一个引入到基底上可为有益的。
可以在反应室中提供基底，并且可提供沉积方法200，所述沉积方法200包括：
在步骤210中，以第一剂量将第一反应物引入到所述基底上，由此在所述一个或多个间隙的表面的第一区域上由所述第一反应物形成不超过约一个单层；
在步骤220中，以第二剂量将第二反应物引入到所述基底上，由此在所述一个或多个间隙的所述表面的第二区域上由所述第二反应物形成不超过约一个单层，
在步骤230中，再次以第一剂量将所述第一反应物引入到所述基底上，由此在所述一个或多个间隙的所述表面的第一区域上由所述第一反应物形成不超过约一个单层；其中
所述第一和所述第二区域在其中所述第一和第二反应物发生反应的重叠区域中重叠，并留下其中所述第一和所述第二区域不重叠的初始未反应区域；及
在步骤240中，以第三剂量将第三反应物引入到所述基底上，所述第三反应物与残留在所述初始未反应区域上的所述第一或第二反应物发生反应。
例如，可以在循环重复反应中提供N,N,N',N'-四乙基硅烷胺、N等离子体、O等离子体，然后提供N等离子体，以自下而上地填充间隙。反应可重复1到10.000次，优选的是5到2000次，并且最优选的是在10和1000次之间。通过使序列中的氮等离子体步骤加倍，更好地保证顶部中的反应物在提供第三反应物O等离子体之前已进行反应，并且被失活。
第三反应物可包括臭氧和/或过氧化氢，其与如N,N,N',N'-四乙基硅烷二胺的硅烷二胺组合可引起高生长。臭氧和/或过氧化氢不需要由等离子体活化来与硅烷二胺反应以提供相对高的生长，这是有益的，因为等离子体的能量在间隙深处可能较低。
潜在生长的反应物可包括有机金属，例如，有机铝，如三甲基铝(TMA)。
如果潜在生长的反应物可包括有机金属，例如如三甲基铝(TMA)的有机铝，那么极低生长的反应物可包括臭氧。臭氧与三甲基铝组合可引起间隙顶部中的低生长。
第三反应物可包括过氧化氢，过氧化氢与三甲基铝组合可引起间隙底部中的高生长。
第三反应物可包括肼，肼与三甲基铝组合可引起间隙底部中的高生长。
第三反应物可包括水，水与三甲基铝组合可引起间隙底部中的高生长。
方法可在半导体处理设备中执行，所述半导体处理设备包括：
一个或多个反应室，其用于容纳基底，所述基底具有在所述基底上制造特征期间形成的间隙；
第一反应物的第一来源，其通过第一阀与所述反应室中的一个进行气体连通；及
第二反应物的第二来源，其通过第二阀与所述反应室中的一个进行气体连通；其中所述设备包括：
第三反应物的第三来源，其通过第三阀与所述反应室中的一个进行气体连通；
控制器，其可操作地连接到所述第一、第二和第三气体阀并被配置和编程成控制：
以第一剂量将第一反应物引入到所述基底上，由此在所述一个或多个间隙的表面的第一区域上由所述第一反应物形成不超过约一个单层；
以第二剂量将第二反应物引入到所述基底上，由此在所述一个或多个间隙的所述表面的第二区域上由所述第二反应物形成不超过约一个单层，
所述第一和所述第二区域在其中所述第一和第二反应物发生反应的重叠区域中重叠，并留下其中所述第一和所述第二区域不重叠的初始未反应区域；及
以第三剂量将第三反应物引入到所述基底上，所述第三反应物与残留在所述初始未反应区域上的所述第一或第二反应物发生反应。
任选地，可以向设备提供加热器以通过升高基底、第一反应物、第二反应物和第三反应物中的一种或多种的温度来活化反应。专门设计用于执行ALD方法的例示性单晶片反应器可购自ASM International NV(荷兰阿尔梅勒市(Almere,The Netherlands))的商品名 和专门设计用于执行ALD方法的例示性分批ALD反应器也可购自ASM International N.V的商品名A400TM和A412TM。
任选地，该设备可以具备射频源，所述射频源可操作地连接到构建并布置成产生第一、第二或第三反应物的等离子体的控制器。等离子体增强型原子层沉积PEALD可在购自荷兰阿尔梅勒市的ASM International N.V的XP8 PEALD反应器中执行，所述设备包括等离子体源以活化一种或多种反应物。
可使用图1A中所说明的设备来执行具有等离子体的工艺循环。图1A是可用于本发明的一些实施例中的PEALD设备的示意图，所述设备宜与被编程成进行下文所描述的工序的控制装置结合。在这个图中，通过提供一对并联并且在反应室3的内部11(反应区)中彼此面对面的导电平板电极4、2，将HRF功率(13.56MHz或27MHz)20施加到一侧，并且使另一侧12电接地，可以在电极之间激励等离子体。
在下部平台2(下部电极)中提供温度调节器，并且将其上所放置的基底1的温度保持在指定温度不变。上部电极4同样充当喷淋板，并且分别通过气体管线21和气体管线22将反应气体(和稀有气体)和前体气体引入到反应室3中，并且使它们穿过喷淋板4。
另外，在反应室3中，提供具有排气管线7的环形管13，通过所述环形管13排出反应室3的内部11中的气体。另外，安置在反应室3下方的传输室5具有密封气体管线24以通过传输室5的内部16(传输区)将密封气体引入到反应室3的内部11中，其中提供用于分隔反应区和传输区的隔离板14(此图省略闸阀，晶片通过闸阀传入传输室5中或从中传出来)。传输室还具有排气管线6。在一些实施例中，在同一反应空间中执行多元素膜的沉积和表面处理，使得所有步骤都可以连续地进行而不将基底暴露于空气或其它含氧气氛中。在一些实施例中，远程等离子体单元可以用于激励气体。
在一些实施例中，在图1A中所描绘的设备中，可以使用图1B中所说明的切换非活性气体流与前体气体流的系统(在前面描述)以脉冲方式引入前体气体，而使反应室的压力基本上不波动。
在一些实施例中，可以使用双室反应器(用于处理彼此靠近的晶片的两个部分或隔室)，其中反应气体和稀有气体可以通过共享管线供应而前体气体通过非共享管线供应。
技术人员应了解，所述设备包含一个或多个被编程或以其它方式配置成使得本文其它地方所描述的沉积和反应器清洁过程能够进行的控制器(未示出)。如本领域的技术人员应了解，控制器与各种电源、加热系统、泵、机器人装置以及反应器的气体流量控制器或阀连通。
应该理解，本文描述的配置和/或方法本质上是例示性的，并且这些具体实施例或实例不被认为是限制性的，因为有可能进行许多变化。本文描述的具体例程或方法可以表示各种处理策略中的一个或多个。因此，所示的各种动作可以以所示的顺序执行、以其它顺序执行或者在一些情况下可以省略。
本公开的主题包括本文公开的各种过程、系统和配置以及其它特征、功能、动作和/或特性及其任何和所有等同物的所有新颖和非显而易见的组合和子组合。

Claims (28)

1.一种通过在反应室中提供基底并提供沉积方法来填充在所述基底上制造特征期间形成的一个或多个间隙的方法，所述沉积方法包括；
以第一剂量将第一反应物引入到所述基底上，由此在所述一个或多个间隙的表面的第一区域上由所述第一反应物形成不超过约一个单层；
以第二剂量将第二反应物引入到所述基底上，由此在所述一个或多个间隙的所述表面的第二区域上由所述第二反应物形成不超过约一个单层，其中
所述第一和所述第二区域在其中所述第一和第二反应物发生反应的重叠区域中重叠，并留下其中所述第一和所述第二区域不重叠的初始未反应区域；及
以第三剂量将第三反应物引入到所述基底上，所述第三反应物与残留在所述初始未反应区域上的所述第一或第二反应物发生反应。
2.根据权利要求1所述的方法，其中所述方法包括在引入第一、第二和/或第三反应物的每一步骤之后移除多余的反应物和副产物。
3.根据权利要求1所述的方法，其中所述沉积方法重复多次以填充所述间隙。
4.根据权利要求1所述的方法，其中所述第一和所述第二反应物中的一个以饱和剂量引入，且所述第一和第二反应物中的另一个以亚饱和剂量引入。
5.根据权利要求4所述的方法，其中所述第一和所述第二反应物中的所述一个是潜在生长的反应物，所述潜在生长的反应物依据其它反应物提供潜在生长。
6.根据权利要求4所述的方法，其中所述饱和剂量大到足以使所述第一和第二反应物中的所述一个到达所述间隙的底部。
7.根据权利要求4所述的方法，其中引入所述第一和所述第二反应物中的所述一个以覆盖所述一个或多个间隙的总表面。
8.根据权利要求4所述的方法，其中所述第一和第二反应物中的所述另一个包括低生长的反应物，所述低生长的反应物结合所述潜在生长的反应物提供相对低的生长。
9.根据权利要求4所述的方法，其中所述亚饱和剂量低到足以使所述第一和第二反应物中的所述另一个不到达所述间隙的所述底部。
10.根据权利要求4所述的方法，其中引入所述第一和所述第二反应物中的所述另一个以覆盖所述第一和第二区域中小于所述一个或多个间隙的所述总表面的所述对应一个区域。
11.根据权利要求10所述的方法，其中所述第一和第二区域中的所述对应一个区域基本上与所述重叠区域相同，并且基本上覆盖所述间隙的顶部。
12.根据权利要求1所述的方法，其中所述第三反应物包括高生长的反应物，所述高生长的反应物结合所述潜在生长的反应物提供相对高的生长。
13.根据权利要求12所述的方法，其中以饱和剂量引入所述第三反应物以确保所述第三反应物到达所述间隙的所述底部。
14.根据权利要求5所述的方法，其中所述潜在生长的反应物包括硅。
15.根据权利要求14所述的方法，其中所述潜在生长的反应物包括硅烷二胺。
16.根据权利要求15所述的方法，其中所述硅烷二胺包括N,N,N',N'-四乙基硅烷二胺。
17.根据权利要求8所述的方法，其中所述极低生长的反应物包括氮。
18.根据权利要求8所述的方法，其中所述极低生长的反应物由等离子体活化。
19.根据权利要求1所述的方法，其中所述第三反应物包括氧。
20.根据权利要求1所述的方法，其中所述第三反应物由等离子体活化。
21.根据权利要求1所述的方法，其中所述沉积方法包括在引入所述第二和所述第三反应物之间再次将所述第一反应物引入到所述基底上。
22.根据权利要求1所述的方法，其中所述第三反应物包括臭氧和/或过氧化氢。
23.根据权利要求5所述的方法，其中所述极生长的反应物包括有机金属。
24.根据权利要求23所述的方法，其中所述有机金属包括有机铝。
25.根据权利要求24所述的方法，其中所述有机铝包括三甲基铝。
26.根据权利要求25所述的方法，其中所述极低生长的反应物包括臭氧。
27.根据权利要求1所述的方法，其中所述第三反应物包括水、过氧化氢或肼。
28.一种半导体处理设备，其包括：
一个或多个反应室，其用于容纳基底，所述基底具有在所述基底上制造特征期间形成的间隙；
第一反应物的第一来源，其通过第一阀与所述反应室中的一个进行气体连通；及
第二反应物的第二来源，其通过第二阀与所述反应室中的一个进行气体连通；其中所述设备包括：
第三反应物的第三来源，其通过第三阀与所述反应室中的一个进行气体连通；
控制器，其可操作地连接到所述第一、第二和第三气体阀并被配置和编程成控制：
以第一剂量将第一反应物引入到所述基底上，由此在所述一个或多个间隙的表面的第一区域上由所述第一反应物形成不超过约一个单层；
以第二剂量将第二反应物引入到所述基底上，由此在所述一个或多个间隙的所述表面的第二区域上由所述第二反应物形成不超过约一个单层，
所述第一和所述第二区域在其中所述第一和第二反应物发生反应的重叠区域中重叠，并留下其中所述第一和所述第二区域不重叠的初始未反应区域；及
以第三剂量将第三反应物引入到所述基底上，所述第三反应物与残留在所述初始未反应区域上的所述第一或第二反应物发生反应。
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