KR20220086715A - 갭을 충진하기 위한 방법 및 장치 - Google Patents

갭을 충진하기 위한 방법 및 장치 Download PDF

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KR20220086715A
KR20220086715A KR1020227020419A KR20227020419A KR20220086715A KR 20220086715 A KR20220086715 A KR 20220086715A KR 1020227020419 A KR1020227020419 A KR 1020227020419A KR 20227020419 A KR20227020419 A KR 20227020419A KR 20220086715 A KR20220086715 A KR 20220086715A
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reactant
introducing
substrate
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gap
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빌자미 뽀레
베르너 크네펜
베르트 용블루트
디터 피에뢰
데르 스타르 히도 판
도시야 스즈키
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에이에스엠 아이피 홀딩 비.브이.
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Abstract

반응 챔버 내에 기판을 제공하고, 제1 반응물을 제1 주입량으로 기판에 도입함으로써 상기 제1 반응물에 의해 제1 영역 상에 약 하나 이하의 단층을 형성하는 단계; 제2 반응물을 제2 주입량으로 기판에 도입함으로써, 상기 제2 반응물에 의해 제2 영역 상에 약 하나 이하의 단층을 형성하는 단계(상기 제1 및 상기 제2 영역은 제1 및 제2 반응물이 반응하는 중첩 영역에서 중첩하고, 상기 제1 및 상기 제2 영역이 중첩하지 않는 미반응 영역을 초기에 남김); 및 초기 미반응 영역 상에 남은 제1 또는 제2 반응물과 반응하는 제3 반응물을 제3 주입량으로 기판에 도입하는 단계에 의해 하나 이상의 갭을 충진하는 방법이 제공된다.

Description

갭을 충진하기 위한 방법 및 장치{METHOD AND APPARATUS FOR FILLING A GAP}
본 발명은 일반적으로 전자 소자 제조용 방법 및 장치에 관한 것이다.
보다 구체적으로 본 발명은 반응 챔버 내에 기판을 제공하고 증착 방법을 제공함으로써, 기판 상에 피처를 제조하는 중에 생성된 하나 이상의 갭을 충진하기 위한 방법 및 장치에 관한 것으로, 상기 증착 방법은,
제1 반응물을 제1 주입량으로 상기 기판에 도입함으로써, 상기 제1 반응물에 의해 상기 하나 이상의 갭 표면의 제1 영역 상에 약 하나 이하의 단층을 형성하는 단계;
제2 반응물을 제2 주입량으로 상기 기판에 도입함으로써, 상기 제2 반응물에 의해 상기 하나 이상의 갭 표면의 제2 영역 상에 약 하나 이하의 단층을 형성하는 단계; 및
상기 제1 및 제2 반응물을 반응시키는 단계를 포함한다.
기판 상에 집적 회로를 제조하는 중에, 갭(gap) 예를 들어 트렌치(trench)가 기판 상에 생성될 수 있다. 트렌치 충진은 특정 응용에 따라 다양한 형태를 취할 수 있다.
기본적인 트렌치 충진 공정은 트렌치 재충진 중에 공동(void) 형성을 포함한 결점을 가질 수 있다. 공동은 완전히 충진되기 전에 형성될 수 있으며, 이 때 재충진 물질은 트렌치의 상부 근처에 수축부(constriction)를 형성한다. 이러한 공동은 집적 회로(IC) 상의 장치의 소자 분리(device isolation)뿐만 아니라 IC의 전반적인 구조적 무결성을 손상시킬 수 있다. 트렌치 충진 중에 공동 형성을 방지하는 것은 불행히도 트렌치 상에 종종 크기 제약을 줄 수 있으며, 이는 소자의 소자 패킹 밀도를 제한할 수 있다.
트렌치가 소자 분리를 위해 충진되는 경우에, 소자 분리의 유효성을 측정하는 핵심 매개 변수는 필드 임계 전압(field threshold voltage) 즉, 인접한 분리 소자를 연결하는 기생 전류(parasitic current)를 생성하는 데 필요한 전압일 수 있다. 필드 임계 전압은 트렌치 폭, 트렌치 충진 물질의 유전 상수, 기판 도핑, 필드 임플란트 도즈(field implant dose), 및 기판 바이어스와 같은 다수의 물리적 및 물질 특성에 의해 영향을 받을 수 있다.
공동 형성은, 트렌치 깊이를 감소시키고/시키거나, 트렌치 측벽을 점점 가늘게 함으로써 완화될 수 있어서, 개구부는 하부보다 상부에서 더 넓을 수 있다. 트렌치 깊이를 줄이는 트레이드 오프는 소자 분리의 효과성을 감소시킬 수 있는 반면에, 점점 가늘게 한 측벽을 갖는 트렌치의 더 큰 상부 개구부도 집적 회로 면적을 추가적으로 소모할 수 있다.
목적은, 예를 들어 개선되거나 적어도 대안적인 갭 충진 방법을 제공하는 것이다.
따라서 반응 챔버 내에 기판을 제공하고 증착 방법을 제공함으로써, 기판 상에 피처를 제조하는 중에 생성된 하나 이상의 갭을 충진하는 방법이 제공되며, 상기 증착 방법은
제1 반응물을 제1 주입량으로 상기 기판에 도입함으로써, 상기 제1 반응물에 의해 상기 하나 이상의 갭 표면의 제1 영역 상에 약 하나 이하의 단층을 형성하는 단계;
제2 반응물을 제2 주입량으로 상기 기판에 도입함으로써, 상기 제2 반응물에 의해 상기 하나 이상의 갭 표면의 제2 영역 상에 약 하나 이하의 단층을 형성하는 단계(상기 제1 및 상기 제2 영역은 상기 제1 및 상기 제2 반응물이 반응하는 중첩 영역에서 중첩되고, 상기 제1 및 상기 제2 영역이 중첩하지 않는 초기 미반응 영역을 남김); 및
상기 초기 미반응 영역 상에 남은 상기 제1 또는 상기 제2 반응물과 반응하는 제3 반응물을 제3 주입량으로 상기 기판에 도입하는 단계를 포함한다.
반응물이 갭 상부의 중첩 영역에서 중첩하도록 제1 및 제2 반응물의 주입량을 가짐으로써, 제1 및 제2 반응물은 갭 상부에서 추가 반응을 차단하면서 갭 상부에서 반응할 것이다. 제1 및 제2 반응물이 중첩하지 않는 갭 하부의 초기 미반응 영역에서, 반응물은 제3 반응물과 여전히 반응할 수 있고, 이로써 갭을 하부에서 상향으로 충진할 수 있다.
또 다른 구현예에 따라, 예를 들어 개선되거나 적어도 대안적인 갭 충진 방법을 제공하는 반도체 처리 장치가 제공된다. 상기 장치는,
기판 상에 피처를 제조하는 중에 생성된 갭을 갖는 상기 기판을 수용하기 위한 하나 이상의 반응 챔버;
상기 반응 챔버 중 하나와 제1 밸브를 통해 가스 연통하는 제1 반응물용 제1 공급원; 및
상기 반응 챔버 중 하나와 제2 밸브를 통해 가스 연통하는 제2 반응물용 제2 공급원을 포함하되, 상기 장치는
상기 반응 챔버 중 하나와 제3 밸브를 통해 가스 연통하는 제3 반응물용 제3 공급원;
상기 제1, 제2 및 제3 가스 밸브에 작동 가능하게 연결되는 제어기를 포함하고, 상기 제어기는
제1 반응물을 제1 주입량으로 상기 기판에 도입함으로써, 상기 제1 반응물에 의해 상기 하나 이상의 갭 표면의 제1 영역 상에 약 하나 이하의 단층을 형성하는 것;
제2 반응물을 제2 주입량으로 상기 기판에 도입함으로써, 상기 제2 반응물에 의해 상기 하나 이상의 갭 표면의 제2 영역 상에 약 하나 이하의 단층을 형성하는 것(상기 제1 및 상기 제2 영역은 상기 제1 및 상기 제2 반응물이 반응하는 중첩 영역에서 중첩되고, 상기 제1 및 상기 제2 영역이 중첩하지 않는 초기 미반응 영역을 남김); 및
상기 초기 미반응 영역 상에 남은 상기 제1 또는 상기 제2 반응물과 반응하는 제3 반응물을 제3 주입량으로 상기 기판에 도입하는 것을 제어하도록 구성되고 프로그래밍된다.
본 발명 및 선행 기술에 대하여 달성되는 장점들을 요약하기 위한 목적으로, 본 발명의 특정 목적 및 장점들이 본원에 기술되었다. 물론, 모든 목적 및 장점들이 본 발명의 임의의 특별한 구현예에 따라 반드시 달성되는 것이 아니라는 것을 이해하여야 한다.
따라서, 예를 들어 당업자는 본 발명이 본원에 교시 또는 제안될 수 있는 다른 목적들 또는 장점들을 반드시 달성하지 않고서, 본원에 교시되거나 제시된 바와 같은 하나의 장점 또는 여러 장점들을 달성 또는 최적화 하는 방식으로 구현되거나 수행될 수 있다는 것을 인식할 것이다.
이들 구현예 모두 본원에 개시된 본 발명의 범주 내에 있도록 의도된다. 이들 및 다른 구현예들은 첨부된 도면들을 참조하는 특정 구현예들의 다음의 상세한 설명으로부터 당업자에게 쉽게 분명하게 될 것이고, 본 발명은 개시된 임의의 특정 구현예(들)에 한정되지 않는다.
본원에 개시된 발명의 이러한 그리고 기타 특징, 양태 및 장점은 특정 구현예의 도면을 참조하여 아래에 설명될 것이고, 이는 본 발명을 도시하고, 본 발명을 한정하기 위함은 아니다.
도 1a는 본 발명의 일 구현예에 이용할 수 있는 갭을 충진하기 위한 PEALD(plasma-enhanced atomic layer deposition)의 개략적인 표시이다.
도 1b는 본 발명의 구현예에 사용할 수 있는 유동-통과 시스템(flow-pass system, FPS)을 사용한 전구체 공급 시스템의 개략적인 표시를 도시한다.
도 2는 제1 구현예에 따라 갭을 충진하는 방법의 흐름도이다.
도 3은 제2 구현예에 따라 갭을 충진하는 방법의 흐름도이다.
특정 구현예 및 실시예가 아래에 개시되었지만, 당업자는 본 발명이 구체적으로 개시된 구현예 및/또는 본 발명의 용도 및 이들의 명백한 변형 및 등가물 너머로 연장된다는 것을 이해할 것이다. 따라서, 개시된 발명의 범주는 후술되는 구체적인 개시된 구현예에 의해 제한되지 않도록 의도된다.
도 2는 기판 상에 피처를 제조하는 중에 생성된 하나 이상의 갭이 증착 방법(100)에 의해 충진될 수 있는 본 발명의 적어도 제1 구현예에 따른 방법의 흐름도이다. 갭은 40, 또는 심지어 20 nm 폭 미만일 수 있다. 갭은 40, 100, 200, 또는 심지어 400 nm 깊이 초과일 수 있다.
기판은 제공될 수 있고, 증착 방법(100)은
단계(110)에서 제1 반응물을 제1 주입량으로 상기 기판에 도입함으로써, 상기 제1 반응물에 의해 상기 하나 이하의 갭 표면의 제1 영역 상에 약 하나 이하의 단층을 형성하는 단계;
단계(120)에서 제2 반응물을 제2 주입량으로 상기 기판에 도입함으로써, 상기 제2 반응물에 의해 상기 하나 이하의 갭 표면의 제2 영역 상에 약 하나 이하의 단층을 형성하는 단계(상기 제1 및 상기 제2 영역은 상기 제1 및 상기 제2 반응물이 반응하는 중첩 영역에서 중첩되고, 상기 제1 및 상기 제2 영역이 중첩하지 않는 초기 미반응 영역을 남김); 및
단계(130)에서 상기 초기 미반응 영역 상에 남은 상기 제1 또는 상기 제2 반응물과 반응하는 제3 반응물을 제3 주입량으로 상기 기판에 도입하는 단계를 포함하여 제공될 수 있다.
반응물이 갭 상부에서 중첩하도록 상기 제1 및 제2 반응물의 주입량을 가짐으로써, 상기 제1 및 제2 반응물은 갭 상부에서 추가 반응을 차단하면서 상부에서 반응할 수 있다. 상기 제1 및 제2 반응물이 중첩하지 않았던 갭 하부에서, 반응물은 제3 반응물과 여전히 반응할 수 있어서 갭을 하부에서 상향으로 충진한다.
제1 및 제2 반응물 중 하나가 전체 갭을 덮도록 제1 및 제2 반응물 중 하나의 주입량은 포화(예, 비교적 높은 농도이고/이거나 긴 시간)되어야 하는 반면에, 제1 및 제2 반응물이 갭 상부에서만 중첩하도록 보증하기 위해서 제1 및 제2 반응물 중 다른 하나의 주입량은 아포화(예, 비교적 짧은 시간이고/이거나 낮은 농도)여야 한다.
과잉의 반응물 및 부산물은 상기 제1, 제2, 및/또는 제3 반응물을 도입한 후에 제거될 수 있어서, 오염물을 야기하는 반응물 사이의 직접 반응을 회피한다.
증착 방법(100)은 루프(140)에 도시된 바와 같이 갭을 충진하기 위해서 여러 번 반복될 수 있다. 반응은 루프(140)를 통해 1 내지 10,000회, 바람직하게는 5 내지 2,000회, 그리고 더욱 바람직하게는 10 내지 1,000회를 반복할 수 있다.
증착 방법(100)은 루프(150)를 통해 부분적으로 반복될 수도 있고 예를 들어, 갭 상부가 여전히 차단되는 경우에 하부에서의 반응용 반응물은 여전히 공급될 수 있다. 루프(140)를 통한 완전한 반복 및 루프(150)를 통한 부분적인 반복을 조합할 수도 있다. 이런 방식으로 갭 충진 방법의 속도를 증가시킬 수 있다.
제1 및 제2 반응물 중 하나는 포화(비교적 높거나 긴) 주입량으로 도입되고, 제1 및 제2 반응물 중 다른 하나는 아포화(비교적 낮거나 짧은) 주입량으로 도입된다. 포화 주입량으로 제공되는 반응물은 갭의 깊은 곳까지 침투하여 갭의 하부에 도달하지만, 아포화 주입량으로 제공되는 반응물은 갭의 깊은 곳까지 침투하지 않고 상부에 머무른다. 따라서, 제1 및 제2 반응물 사이의 반응은 갭의 상부에서만 발생할 수 있어서 갭 상부에서 추가 반응을 차단한다.
제1 및 제2 반응물 중 하나는 잠재적 성장 반응물일 수 있는 반면에, 제1 및 제2 반응물 중 다른 하나는 잠재적 성장 반응물과 조합하여 비교적 낮은 성장을 제공하는 저성장 반응물을 포함할 수 있다. 따라서, 제1 및 제2 반응물 사이의 반응 결과는 갭의 하부가 실질적으로 충진되기 전에 갭의 상부가 차단될 수 없도록 갭 상부에서 비교적 낮은 성장을 생성할 수 있다.
제1 및 제2 반응물 중 하나는, 하나 이상의 갭의 전체 표면을 실질적으로 덮는 제1 및 제2 영역 중 대응하는 하나를 덮도록 도입될 수 있다. 제1 및 제2 반응물 중 하나는 다른 반응물에 의존하여 잠재적 성장을 제공하는 잠재적 성장 반응물일 수 있다.
잠재적 성장 반응물인 제1 및 제2 반응물 중 하나는 실리콘을 포함할 수 있다. 잠재적 성장 반응물은 예를 들어, 에어 리퀴드(파리, 프랑스)사의 ALOHATM SAM.24 상표명으로 팔리는 N,N,N',N'-테트라에틸 실란디아민과 같이, 실란디아민을 포함할 수 있다.
실질적인 저성장 반응물은 플라즈마에 의해 선택사항으로 활성화될 수 있는 질소를 포함할 수 있다. 예를 들어 N,N,N',N'-테트라에틸 실란디아민과 같은 실란디아민과 같은 잠재적 성장 반응물과 조합한 질소는 갭 상부에 비교적 낮은 성장 결과를 가질 수 있다. 잠재적 성장 반응물을 제공하기 전에 실질적인 저성장 반응물을 제공하는 것이 유리할 수 있다.
제3 반응물은 잠재적 성장 반응물과 조합하여 비교적 높은 성장을 제공하는 고성장 반응물을 포함할 수 있다. 제3 반응물이 갭의 하부에서 잠재적 성장 반응물과 반응할 수 있게 하도록, 제3 반응물이 갭의 하부에 도달함을 보증하는, 비교적 큰 주입량으로 제3 반응물이 도입될 수 있다. 제1 및 제2 반응물이 이미 갭의 상부에서 반응할 수 있기 때문에, 제3 반응물에 대한 트렌치 상부에서의 반응은 차단된다.
제3 반응물은 플라즈마에 의해 활성화될 수 있는 산소를 포함할 수 있다. N,N,N',N'-테트라에틸 실란디아민과 같은 실란디아민과 조합한 산소는 갭 하부에 비교적 높은 성장 결과를 가질 수 있다.
예를 들어, 갭을 하부에서 상향으로 충진하기 위한 주기적인 반복 반응에서 N,N,N',N'- 테트라에틸 실란디아민, N 플라즈마 및 그 다음 O 플라즈마를 제공할 수 있다. 대안적으로, 갭을 하부에서 상향으로 충진하기 위한 주기적인 반복 반응에서, N 플라즈마, N,N,N',N'- 테트라에틸 실란디아민 및 그 다음 O 플라즈마를 제공할 수 있다.
도 3은 본 발명의 적어도 제2 구현예에 따른 방법(200)의 흐름도로서, 제2 및 제3 반응물을 도입하는 사이에 제1 및 제2 반응물 중 하나를 제3 반응물이 제공되기 전에 기판에 다시 도입하는 것이 유익할 수 있다.
기판은 반응 챔버 내에 제공될 수 있고, 증착 방법(200)은
단계(210)에서 제1 반응물을 제1 주입량으로 상기 기판에 도입함으로써, 상기 제1 반응물에 의해 상기 하나 이상의 갭 표면의 제1 영역 상에 약 하나 이하의 단층을 형성하는 단계;
단계(220)에서 제2 반응물을 제2 주입량으로 상기 기판에 도입함으로써, 상기 제2 반응물에 의해 상기 하나 이상의 갭 표면의 제2 영역 상에 약 하나 이하의 단층을 형성하는 단계;
단계(230)에서 제1 반응물을 제1 주입량으로 상기 기판에 다시 도입함으로써, 상기 제1 반응물에 의해 상기 하나 이상의 갭 표면의 제1 영역 상에 약 하나 이하의 단층을 형성하는 단계(상기 제1 및 상기 제2 영역은 상기 제1 및 상기 제2 반응물이 반응하는 중첩 영역에서 중첩되고, 상기 제1 및 상기 제2 영역이 중첩하지 않는 초기 미반응 영역을 남김);
단계(240)에서 상기 초기 미반응 영역 상에 남은 상기 제1 또는 상기 제2 반응물과 반응하는 제3 반응물을 제3 주입량으로 상기 기판에 도입하는 단계를 포함하여 제공될 수 있다.
예를 들어, 갭을 하부에서 상향으로 충진하기 위한 주기적인 반복 반응에서 N,N,N',N'-테트라에틸 실란디아민, N 플라즈마, O 플라즈마 및 그 다음 N 플라즈마를 제공할 수 있다. 반응은 1 내지 10,000회, 바람직하게는 5 내지 2,000회, 그리고 더욱 바람직하게는 10 내지 1,000회를 반복할 수 있다. 시퀀스 내의 질소 플라즈마 단계를 두 배로 함으로써, 상부의 반응물이 반응하고 제3의 반응물 O 플라즈마가 제공되기 전에 비활성화되는 것이 더 확실하다.
제3 반응물은, N,N,N',N'-테트라에틸 실란디아민과 같은 실란디아민과 조합하여 높은 성장 결과를 가질 수 있는 오존 및/또는 수소페록사이드를 포함할 수 있다. 오존 및/또는 수소페록사이드는 비교적 높은 성장을 제공하는 실란디아민과 반응하기 위해서 플라즈마에 의해 활성활될 필요가 없으며. 플라즈마 에너지가 갭 깊은 곳에서 더 낮을 수 있기 때문에 이점이 있다.
잠재적 성장 반응물은 유기금속을, 예를 들어 트리메틸알루미늄(TMA)과 같은 유기알루미늄을 포함할 수 있다.
잠재적 성장 반응물이 유기금속을, 예를 들어 트리메틸알루미늄(TMA)과 같은 유기알루미늄을 포함할 수 있는 경우, 실질적인 저성장 반응물은 오존을 포함할 수 있다. 트리메틸알루미늄과 조합하는 오존은 갭 상부의 낮은 성장 결과를 가질 수 있다.
제3 반응물은 수소페록사이드를 포함할 수 있으며, 트리메틸알루미늄과 조합하면 갭 하부에서 높은 성장 결과를 가질 수 있다.
제3 반응물은 히드라진을 포함할 수 있으며, 트리메틸알루미늄과 조합하면 갭 하부에서 높은 성장 결과를 가질 수 있다.
제3 반응물은 물을 포함할 수 있으며, 트리메틸알루미늄과 조합하면 갭 하부에서 높은 성장 결과를 가질 수 있다.
방법은 반도체 공정 처리 장치로 수행될 수 있으며, 상기 장치는
기판 상에 피처를 생성하는 중에 생성된 갭을 갖는 상기 기판을 수용하기 위한 하나 이상의 반응 챔버;
상기 반응 챔버 중 하나와 제1 밸브를 통해 가스 연통하는 제1 반응물용 제1 공급원; 및
상기 반응 챔버 중 하나와 제2 밸브를 통해 가스 연통하는 제2 반응물용 제2 공급원을 포함하되, 상기 장치는
상기 반응 챔버 중 하나와 제3 밸브를 통해 가스 연통하는 제3 반응물용 제3 공급원;
상기 제1, 제2 및 제3 가스 밸브에 작동 가능하게 연결되는 제어기를 포함하고, 상기 제어기는
제1 반응물을 제1 주입량으로 상기 기판에 도입함으로써, 상기 제1 반응물에 의해 상기 하나 이상의 갭 표면의 제1 영역 상에 약 하나 이하의 단층을 형성하는 것;
제2 반응물을 제2 주입량으로 상기 기판에 도입함으로써, 상기 제2 반응물에 의해 상기 하나 이상의 갭 표면의 제2 영역 상에 약 하나 이하의 단층을 형성하는 것(상기 제1 및 상기 제2 영역은 상기 제1 및 상기 제2 반응물이 반응하는 중첩 영역에서 중첩되고, 상기 제1 및 상기 제2 영역이 중첩하지 않는 초기 미반응 영역을 남김); 및
상기 초기 미반응 영역 상에 남은 상기 제1 또는 상기 제2 반응물과 반응하는 제3 반응물을 제3 주입량으로 상기 기판에 도입하는 것을 제어하도록 구성되고 프로그래밍된다.
선택 사항으로 장치는 하나 이상의 기판, 제1 반응물, 제2 반응물, 및 제3 반응물의 온도를 증가시킴으로써, 반응을 활성화하는 히터가 제공될 수 있다. ALD 공정을 수행하기 위해 구체적으로 설계된 예시적인 단일 웨이퍼 리액터는 상표명 Pulsar®, Emerald®, Dragon®, 및 Eagle®인 네덜란드 Almere의 ASM International NV사로부터 상업적으로 이용 가능하다. ALD 공정을 수행하기 위해 특별히 고안된 배치식 ALD 반응기의 예는 상표명 A400TM 및 A412TM로 ASM Europe N.V사로부터 상업적으로 또한 이용 가능하다.
선택 사항으로, 장치는 제1, 제2 또는 제3 반응물의 플라즈마를 생성하도록 구성되고 배치된 제어기와 작동 가능하게 연결된 RF 공급원이 제공될 수 있다 플라즈마 강화 원자층 증착(PEALD)은 하나 이상의 반응물을 활성화시키기 위한 플라즈마 소스를 포함하는 네덜란드 Almere의 ASM International N.V.사로부터 이용 가능한 Eagle® XP8 PEALD 반응기에서 수행될 수 있다.
플라즈마와 함께 공정 사이클은 예를 들어, 도 1a에 도시된 장치를 사용하여 수행될 수 있다. 도 1a는, 본 발명의 일부 구현예에 사용될 수 있고 바람직하게는 본원에 기술된 시퀀스를 수행하기 위해 프로그램된 제어기와 연결된 PEALD 장치의 개략도이다. 이 도면에서, 서로 마주하며 평행한 한 쌍의 전기 전도성 평판 전극(4, 2)을 반응 챔버(3)의 내부(반응 구역)(11)에 공급하고, HRF 전력(13.56 MHz 또는 27 MHz)(20)을 일측에 인가하고 타측(12)을 전기적으로 접지시킴으로써, 플라즈마가 전극들 사이에서 여기된다.
온도 조절기가 하부 스테이지(하부 전극)(2)에 제공되고, 그 위에 놓인 기판(1)의 온도는 주어진 온도로 일정하게 유지된다. 상부 전극(4)은 샤워 플레이트(shower plate)로서의 역할도 수행하며, 반응물 가스 (및 귀(noble)가스) 및 전구체 가스는 각각의 가스 라인(21) 및 가스 라인(22)을 통해서 그리고 샤워 플레이트(4)를 통해서 반응 챔버(3)로 유입된다.
추가적으로, 반응 챔버(3)에는 배기 라인(7)을 갖는 원형 덕트(13)가 제공되고, 이를 통해 반응 챔버(3)의 내부(11)에 있는 가스가 배기된다. 추가적으로, 반응 챔버(3) 아래에 배치된 이송 챔버(5)는, 이송 챔버(5)의 내부(이송 구역)(16)를 통해 반응 챔버(3)의 내부(11)로 씰 가스를 유입하기 위한 씰 가스 라인(24)을 구비하며, 반응 구역과 이송 구역을 분리하기 위한 분리 판(14)이 제공된다(웨이퍼가 이송 챔버(5)로 또는 이송 챔버로부터 이송되는 게이트 밸브는 본 도면에서 생략됨). 이송 챔버는 또한 배기 라인(6)을 구비한다. 일부 구현예에서, 다중-요소 막의 증착 및 표면 처리는 동일한 반응 공간에서 수행되어, 모든 단계들이 기판을 공기 또는 다른 산소-함유 대기에 노출시키지 않고 연속적으로 수행될 수 있다. 일부 구현예에서, 가스를 여기시키기 위한 리모트 플라즈마 유닛이 사용될 수 있다.
일부 구현예에서, 도 1a에 묘사된 장치에서, 도 1b에 도시된(앞에서 설명된) 불활성 가스의 흐름 및 전구체 가스의 흐름을 스위칭하는 시스템이, 반응 챔버의 압력을 실질적으로 변동시키지 않고 전구체 가스를 펄스로 유입하기 위해 사용될 수 있다.
일부 구현예에서, 듀얼 챔버 반응기(서로 근접하게 배치된 웨이퍼를 프로세싱하기 위한 2개의 섹션 또는 컴파트먼트)가 사용될 수 있고, 반응물 가스 및 희가스는 공유된 라인을 통해 공급될 수 있는 반면에 전구체 가스는 공유되지 않은 라인을 통해 공급된다.
당업자는 프로그램된, 그렇지 않으면 증착 및 본원의 다른 곳에서 설명되는 반응기 세정 공정이 수행되도록 구성된, 하나 이상의 제어기(들)가 장치에 포함된다는 것을 이해할 것이다. 제어기(들)는, 당업자가 이해하는 바와 같이, 다양한 전력원, 가열 시스템, 펌프, 로보틱스, 및 반응기의 가스 흐름 제어기 또는 밸브들과 통신한다.
본원에 기술된 구성 및/또는 접근법은 본질적으로 예시적인 것이며, 다양한 변형이 가능하기 때문에, 이들 특정 구현예 또는 실시예가 제한적인 의미로 고려되어서는 안 된다는 것을 이해해야 한다. 본원에 설명된 특정 루틴 또는 방법은 임의의 수의 처리 전략 중 하나 이상을 나타낼 수 있다. 따라서, 도시된 다양한 동작은 도시된 시퀀스에서, 상이한 시퀀스에서 수행되거나, 경우에 따라 생략될 수 있다.
본 개시의 요지는 본원에 개시된 다양한 공정, 시스템, 및 구성, 다른 특징, 기능, 행위 및/또는 성질의, 신규하고 비자명한, 모든 조합 및 하위조합뿐만 아니라 임의의 그리고 모든 이들의 등가물들을 포함한다.

Claims (20)

  1. 기판 상에 하나 이상의 갭을 충진하는 방법으로서, 상기 방법은:
    반응 챔버 내에 기판을 제공하는 단계;
    상기 갭의 제 1 영역에서 제 1 반응물을 이용하여 층을 형성하기 위해 상기 제 1 반응물을 제 1 주입량으로 상기 기판에 도입하는 단계;
    상기 갭의 제 2 영역에서 제 2 반응물을 이용하여 층을 형성하기 위해 상기 제 2 반응물을 제 2 주입량으로 상기 기판에 도입하는 단계로서, 상기 제 1 영역 및 상기 제 2 영역은 중첩 영역에서 중첩되는, 상기 제 2 반응물을 도입하는 단계; 및
    제 3 반응물을 제 3 주입량으로 상기 기판에 도입하는 단계로서, 상기 제 3 반응물은 상기 제 1 영역 및 상기 제 2 영역이 중첩되지 않는 영역 상에 남은 상기 제 1 반응물 또는 상기 제 2 반응물과 반응하는, 상기 제 3 반응물을 도입하는 단계를 포함하고,
    상기 제 1 반응물 및 상기 제 2 반응물의 하나는 실리콘을 포함하는, 기판 상에 하나 이상의 갭을 충진하는 방법.
  2. 제 1 항에 있어서,
    상기 방법은 상기 제 1 반응물을 도입하는 단계, 상기 제 2 반응물을 도입하는 단계 및 상기 제 3 반응물을 도입하는 단계 중 하나 이상의 단계들 이후에, 과잉의 반응물 및 부산물을 제거하는 단계를 포함하는, 기판 상에 하나 이상의 갭을 충진하는 방법.
  3. 제 1 항에 있어서,
    상기 제 3 반응물은 산소를 포함하는, 기판 상에 하나 이상의 갭을 충진하는 방법.
  4. 제 1 항에 있어서,
    상기 제 3 반응물은 오존 및 수소페록사이드 중 하나 이상을 포함하는, 기판 상에 하나 이상의 갭을 충진하는 방법.
  5. 제 1 항에 있어서,
    상기 제 1 반응물, 상기 제 2 반응물 및 상기 제 3 반응물 중 둘 이상은 플라즈마 활성화된, 기판 상에 하나 이상의 갭을 충진하는 방법.
  6. 제 1 항에 있어서,
    상기 제 2 반응물 및 상기 제 3 반응물은 플라즈마 활성화된, 기판 상에 하나 이상의 갭을 충진하는 방법.
  7. 제 1 항에 있어서,
    상기 제 1 반응물, 상기 제 2 반응물 및 상기 제 3 반응물의 각각은 플라즈마 활성화된, 기판 상에 하나 이상의 갭을 충진하는 방법.
  8. 제 1 항에 있어서,
    상기 제 1 반응물 및 상기 제 2 반응물을 도입하는 사이에, 상기 기판에 다시 상기 제 1 반응물을 도입하는 단계를 더 포함하는, 기판 상에 하나 이상의 갭을 충진하는 방법.
  9. 제 1 항에 있어서,
    상기 제 2 반응물 및 상기 제 3 반응물을 도입하는 사이에, 상기 기판에 다시 상기 제 2 반응물을 도입하는 단계를 더 포함하는, 기판 상에 하나 이상의 갭을 충진하는 방법.
  10. 제 1 항에 있어서,
    상기 제 2 반응물은 실리콘인, 기판 상에 하나 이상의 갭을 충진하는 방법.
  11. 제 1 항에 있어서,
    상기 제 1 반응물을 도입하는 단계를 반복하기 이전에, 상기 제 2 반응물을 도입하는 단계와 상기 제 3 반응물을 도입하는 단계를 반복하는 단계를 더 포함하는, 기판 상에 하나 이상의 갭을 충진하는 방법.
  12. 제 1 항에 있어서,
    상기 제 1 반응물 및 상기 제 2 반응물의 하나 이상은 실란디아민을 포함하는, 기판 상에 하나 이상의 갭을 충진하는 방법.
  13. 제 12 항에 있어서,
    상기 실란디아민은 N,N,N',N'-테트라에틸 실란디아민을 포함하는, 기판 상에 하나 이상의 갭을 충진하는 방법.
  14. 기판 상에 하나 이상의 갭을 충진하는 방법으로서,
    반응 챔버에 상기 기판을 제공하는 단계;
    상기 갭의 제 1 영역에서 제 1 반응물을 이용하여 층을 형성하기 위해 상기 제 1 반응물을 제 1 주입량으로 상기 기판에 도입하는 단계;
    상기 갭의 제 2 영역에서 제 2 반응물을 이용하여 층을 형성하기 위해 상기 제 2 반응물을 제 2 주입량으로 상기 기판에 도입하는 단계로서, 상기 제 1 영역 및 상기 제 2 영역은 중첩 영역에서 중첩되고 상기 제 1 영역 및 상기 제 2 영역이 중첩되지 않는 영역을 남기는, 상기 제 2 반응물을 도입하는 단계; 및
    제 3 반응물을 제 3 주입량으로 상기 기판에 도입하는 단계로서, 상기 제 3 반응물은 상기 제 1 영역 및 상기 제 2 영역이 중첩되지 않는 영역 상에 남은 상기 제 1 반응물 또는 상기 제 2 반응물과 반응하는, 상기 제 3 반응물을 도입하는 단계를 포함하고,
    상기 제 1 반응물 및 상기 제 3 반응물 중 하나 이상은 플라즈마 활성화되고,
    상기 방법은:
    상기 제 1 반응물 및 상기 제 2 반응물을 도입하는 사이에, 상기 기판에 다시 상기 제 1 반응물을 도입하는 단계, 및
    상기 제 2 반응물 및 상기 제 3 반응물을 도입하는 사이에, 상기 기판에 다시 상기 제 2 반응물을 도입하는 단계 중 하나 이상을 더 포함하는, 기판 상에 하나 이상의 갭을 충진하는 방법.
  15. 제 14 항에 있어서,
    상기 제 3 반응물은 산소를 포함하는, 기판 상에 하나 이상의 갭을 충진하는 방법.
  16. 제 14 항에 있어서,
    상기 제 3 반응물은 오존 및 수소페록사이드 중 하나 이상을 포함하는, 기판 상에 하나 이상의 갭을 충진하는 방법.
  17. 제 14 항에 있어서,
    상기 제 1 반응물 및 상기 제 2 반응물을 도입하는 사이에, 상기 기판에 다시 상기 제 1 반응물을 도입하는 단계를 더 포함하는, 기판 상에 하나 이상의 갭을 충진하는 방법.
  18. 제 14 항에 있어서,
    상기 제 2 반응물 및 상기 제 3 반응물을 도입하는 사이에, 상기 기판에 다시 상기 제 2 반응물을 도입하는 단계를 더 포함하는, 기판 상에 하나 이상의 갭을 충진하는 방법.
  19. 제 1 항에 있어서,
    상기 제 2 반응물은 실리콘을 포함하는, 기판 상에 하나 이상의 갭을 충진하는 방법.
  20. 반도체 처리 장치로서,
    기판 상에 피처를 제조하는 중에 생성된 갭이 제공되는 상기 기판을 수용하기 위한 하나 이상의 반응 챔버;
    상기 반응 챔버 중 하나와 제 1 밸브를 통해 가스 연통하는 제 1 반응물용 제 1 공급원; 및
    상기 반응 챔버 중 하나와 제 2 밸브를 통해 가스 연통하는 제 2 반응물용 제 2 공급원을 포함하고,
    상기 장치는:
    상기 반응 챔버 중 하나와 제 3 밸브를 통해 가스 연통하는 제 3 반응물용 제3 공급원; 및
    상기 제 1, 제 2 및 제 3 가스 밸브에 작동 가능하게 연결되는 제어기를 포함하고, 상기 제어기는:
    하나 이상의 갭의 표면의 제 1 영역 상에 제 1 주입량으로 상기 기판에 제 1 반응물을 도입하고;
    상기 하나 이상의 갭의 상기 표면의 제 2 영역 상에 제 2 주입량으로 상기 기판에 제 2 반응물을 도입하되, 상기 제 1 및 제 2 영역은 중첩 영역에서 중첩되고 상기 제 1 및 제 2 영역이 중첩되지 않는 영역은 남겨두고, 상기 제 1 반응물 및 상기 제 2 반응물 중 하나는 실리콘을 포함하고; 그리고
    제 3 주입량으로 상기 기판에 제 3 반응물을 도입하되, 상기 제 3 반응물은 상기 제 1 및 제 2 영역이 중첩되지 않는 상기 영역 상에 남은 상기 제 1 또는 제 2 반응물과 반응하는 것을 제어하도록 구성되고 프로그래밍되는, 반도체 처리 장치.
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