JP2011082560A - 微細パターンの形成方法 - Google Patents
微細パターンの形成方法 Download PDFInfo
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- JP2011082560A JP2011082560A JP2010289449A JP2010289449A JP2011082560A JP 2011082560 A JP2011082560 A JP 2011082560A JP 2010289449 A JP2010289449 A JP 2010289449A JP 2010289449 A JP2010289449 A JP 2010289449A JP 2011082560 A JP2011082560 A JP 2011082560A
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- 238000000034 method Methods 0.000 title claims abstract description 128
- 239000010408 film Substances 0.000 claims abstract description 214
- 239000007789 gas Substances 0.000 claims abstract description 200
- 238000012545 processing Methods 0.000 claims abstract description 77
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 43
- 239000010409 thin film Substances 0.000 claims abstract description 36
- 150000002926 oxygen Chemical class 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000001301 oxygen Substances 0.000 claims description 52
- 229910052760 oxygen Inorganic materials 0.000 claims description 52
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 42
- 238000009966 trimming Methods 0.000 claims description 28
- 238000010926 purge Methods 0.000 claims description 25
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 22
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 14
- 239000002243 precursor Substances 0.000 claims description 14
- 238000000206 photolithography Methods 0.000 claims description 11
- WZUCGJVWOLJJAN-UHFFFAOYSA-N diethylaminosilicon Chemical compound CCN([Si])CC WZUCGJVWOLJJAN-UHFFFAOYSA-N 0.000 claims description 4
- AWFPGKLDLMAPMK-UHFFFAOYSA-N dimethylaminosilicon Chemical compound CN(C)[Si] AWFPGKLDLMAPMK-UHFFFAOYSA-N 0.000 claims description 4
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 claims description 3
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 claims description 2
- UOERHRIFSQUTET-UHFFFAOYSA-N N-propyl-N-silylpropan-1-amine Chemical compound CCCN([SiH3])CCC UOERHRIFSQUTET-UHFFFAOYSA-N 0.000 claims description 2
- 230000007261 regionalization Effects 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 54
- 230000008569 process Effects 0.000 description 54
- 230000015572 biosynthetic process Effects 0.000 description 41
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- 238000004519 manufacturing process Methods 0.000 description 28
- 230000007246 mechanism Effects 0.000 description 26
- 235000012431 wafers Nutrition 0.000 description 26
- 229920002120 photoresistant polymer Polymers 0.000 description 24
- 239000004065 semiconductor Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 238000005530 etching Methods 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 239000006185 dispersion Substances 0.000 description 13
- 239000007800 oxidant agent Substances 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 125000003277 amino group Chemical group 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000005192 partition Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 231100000572 poisoning Toxicity 0.000 description 3
- 230000000607 poisoning effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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Abstract
【解決手段】薄膜102上に、レジスト膜を形成する工程と、レジスト膜を、所定のピッチを持つレジストパターン103´に加工する工程と、基板を成膜温度として100℃以下に制御する工程と、成膜温度を100℃以下に制御しながら、有機シリコンを含むソースガスと活性化された酸素種とを交互に供給し、レジストパターン103´及び薄膜102上に、シリコン酸化膜104を形成する。
【選択図】図4
Description
図1乃至図6は、この発明の第1の実施形態に係る微細パターンの形成方法を主要な製造工程毎に示す断面図である。
図13は、この発明の第2の実施形態に係る微細パターンの形成方法の主要な製造工程を示す断面図である。
図15乃至図23は、この発明の第3の実施形態に係る微細パターンの形成方法を主要な製造工程毎に示す断面図である。
図24乃至図28は、この発明の第4の実施形態に係る微細パターンの形成方法を主要な製造工程毎に示す断面図である。
102;薄膜
103;フォトレジストパターン
103´;トリミングされたフォトレジストパターン
104;シリコン酸化膜
105;フォトレジストパターン
105´;トリミングされたフォトレジストパターン
106;ハードマスク膜
200、201;反射防止膜
Claims (13)
- 基板上に、薄膜を形成する工程と、
前記薄膜上に、レジスト膜を形成する工程と、
フォトリソグラフィ技術を用いて、前記レジスト膜を、所定のピッチを持つレジストパターンに加工する工程と、
前記基板を成膜温度として100℃以下に制御する工程と、
前記成膜温度を100℃以下に制御しながら、有機シリコンを含むソースガスと活性化された酸素種とを交互に供給し、前記レジストパターン及び前記薄膜上に、シリコン酸化膜を形成する工程と、
を具備することを特徴とする微細パターンの形成方法。 - 前記成膜温度が、25℃〜75℃であることを特徴とする請求項1に記載の微細パターンの形成方法。
- 前記ソースガスとして、アミノシラン系プリカーサーを用いることを特徴とする請求項1又は請求項2に記載の微細パターンの形成方法。
- 前記アミノシラン系プリカーサーは、1価または2価のアミノシラン系プリカーサーであることを特徴とする請求項3に記載の微細パターンの形成方法。
- 前記1価または2価のアミノシラン系プリカーサーは、
BTBAS(ビスターシャリブチルアミノシラン)、
BDMAS(ビスジメチルアミノシラン)、
BDEAS(ビスジエチルアミノシラン)、
DMAS(ジメチルアミノシラン)、
DEAS(ジエチルアミノシラン)、
DPAS(ジプロピルアミノシラン)、
BAS(ブチルアミノシラン)、
DIPAS(ジイソプロピルアミノシラン)、
BEMAS(ビスエチルメチルアミノシラン)、
から選択された少なくとも1種を用いることを特徴とする請求項4に記載の微細パターンの形成方法。 - 前記活性化された酸素種として、プラズマにより励起された酸素ラジカルを用いることを特徴とする請求項1乃至請求項5のいずれか一項に記載の微細パターンの形成方法。
- 前記プラズマにより励起された酸素ラジカルは、O2ガス、NOガス、N2Oガス、H2Oガス、O3ガスのいずれかから選択される少なくとも1種をプラズマ化して得ることを特徴とする請求項6に記載の微細パターンの形成方法。
- 前記シリコン酸化膜は真空保持可能な処理容器内で形成され、前記ソースガスを前記処理容器内へ供給する工程と、前記活性化された酸素種を前記処理容器内へ供給する工程とを交互に実施して形成することを特徴とする請求項1乃至請求項7のいずれか一項に記載の微細パターンの形成方法。
- 前記ソースガスを前記処理容器内へ供給する工程と、前記活性化された酸素種を前記処理容器内へ供給する工程との間に、前記処理容器内に残留しているガスを除去する工程を挿入することを特徴とする請求項8に記載の微細パターンの形成方法。
- 前記処理容器内に残留しているガスを除去する工程は、前記処理容器内を真空引きしながら前記処理容器内にパージガスを導入することを特徴とする請求項9に記載の微細パターンの形成方法。
- 前記レジスト膜を前記レジストパターンに加工する工程の後に、前記レジストパターンをトリミングする工程を、さらに具備することを特徴とする請求項1から請求項10のいずれか一項に記載の微細パターンの形成方法。
- 前記レジストパターンをトリミングする工程と、前記シリコン酸化膜を形成する工程とを、同一の成膜装置内で連続して行うことを特徴とする請求項11に記載の微細パターンの形成方法。
- 前記レジストパターンをトリミングする工程は、酸素含有ガスプラズマ、またはオゾンガスを用いてレジストパターンをトリミングすることを特徴とする請求項11又は請求項12に記載の微細パターンの形成方法。
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Also Published As
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WO2008149988A1 (ja) | 2008-12-11 |
KR101101785B1 (ko) | 2012-01-05 |
KR20090096408A (ko) | 2009-09-10 |
US7989354B2 (en) | 2011-08-02 |
US20110237082A1 (en) | 2011-09-29 |
US8383522B2 (en) | 2013-02-26 |
JP4659856B2 (ja) | 2011-03-30 |
KR20110117226A (ko) | 2011-10-26 |
KR20110036129A (ko) | 2011-04-06 |
US20100130015A1 (en) | 2010-05-27 |
KR101073858B1 (ko) | 2011-10-14 |
TW201145355A (en) | 2011-12-16 |
TW200917335A (en) | 2009-04-16 |
TWI364783B (ja) | 2012-05-21 |
JP5156086B2 (ja) | 2013-03-06 |
TWI498941B (zh) | 2015-09-01 |
JP2009016815A (ja) | 2009-01-22 |
KR101217778B1 (ko) | 2013-01-02 |
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