JP2009016815A - 微細パターンの形成方法 - Google Patents
微細パターンの形成方法 Download PDFInfo
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- JP2009016815A JP2009016815A JP2008149272A JP2008149272A JP2009016815A JP 2009016815 A JP2009016815 A JP 2009016815A JP 2008149272 A JP2008149272 A JP 2008149272A JP 2008149272 A JP2008149272 A JP 2008149272A JP 2009016815 A JP2009016815 A JP 2009016815A
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- 238000000034 method Methods 0.000 title claims abstract description 142
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 45
- 239000010408 film Substances 0.000 claims abstract description 250
- 239000007789 gas Substances 0.000 claims abstract description 202
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 52
- 239000010409 thin film Substances 0.000 claims abstract description 49
- 150000002926 oxygen Chemical class 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 238000012545 processing Methods 0.000 claims description 86
- 239000001301 oxygen Substances 0.000 claims description 51
- 229910052760 oxygen Inorganic materials 0.000 claims description 51
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 41
- 238000009966 trimming Methods 0.000 claims description 32
- 238000010926 purge Methods 0.000 claims description 25
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 22
- 238000000206 photolithography Methods 0.000 claims description 16
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 14
- 239000002243 precursor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- WZUCGJVWOLJJAN-UHFFFAOYSA-N diethylaminosilicon Chemical compound CCN([Si])CC WZUCGJVWOLJJAN-UHFFFAOYSA-N 0.000 claims description 4
- AWFPGKLDLMAPMK-UHFFFAOYSA-N dimethylaminosilicon Chemical compound CN(C)[Si] AWFPGKLDLMAPMK-UHFFFAOYSA-N 0.000 claims description 4
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 claims description 3
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 claims description 2
- UOERHRIFSQUTET-UHFFFAOYSA-N N-propyl-N-silylpropan-1-amine Chemical compound CCCN([SiH3])CCC UOERHRIFSQUTET-UHFFFAOYSA-N 0.000 claims description 2
- 230000007261 regionalization Effects 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 53
- 239000011295 pitch Substances 0.000 description 34
- 238000004519 manufacturing process Methods 0.000 description 28
- 235000012431 wafers Nutrition 0.000 description 26
- 229920002120 photoresistant polymer Polymers 0.000 description 24
- 239000004065 semiconductor Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 238000005530 etching Methods 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 239000006185 dispersion Substances 0.000 description 13
- 239000007800 oxidant agent Substances 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 125000003277 amino group Chemical group 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000005192 partition Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 231100000572 poisoning Toxicity 0.000 description 3
- 230000000607 poisoning effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
【解決手段】第1レジストパターン103´及び薄膜102上に、有機シリコンを含むソースガスと活性化された酸素種とを交互に供給して薄膜102及び第1レジストパターン103´とは異なるシリコン酸化膜104を形成し、シリコン酸化膜104上に第2レジスト膜を形成し、第2レジスト膜を所定のピッチを持つ第2レジストパターン105に加工し、第1、第2レジストパターン103´及び105´をマスクに用いて薄膜102を加工する。
【選択図】図4
Description
図1乃至図6は、この発明の第1の実施形態に係る微細パターンの形成方法を主要な製造工程毎に示す断面図である。
図13は、この発明の第2の実施形態に係る微細パターンの形成方法の主要な製造工程を示す断面図である。
図15乃至図23は、この発明の第3の実施形態に係る微細パターンの形成方法を主要な製造工程毎に示す断面図である。
図24乃至図28は、この発明の第4の実施形態に係る微細パターンの形成方法を主要な製造工程毎に示す断面図である。
102;薄膜
103;フォトレジストパターン
103´;トリミングされたフォトレジストパターン
104;シリコン酸化膜
105;フォトレジストパターン
105´;トリミングされたフォトレジストパターン
106;ハードマスク膜
200、201;反射防止膜
Claims (18)
- 基板上に、薄膜を形成する工程と、
前記薄膜上に、第1レジスト膜を形成する工程と、
フォトリソグラフィ技術を用いて、前記第1レジスト膜を、所定のピッチを持つ第1レジストパターンに加工する工程と、
有機シリコンを含むソースガスと活性化された酸素種とを交互に供給し、前記第1レジストパターン及び前記薄膜上に、前記薄膜及び前記第1レジストパターンとは異なるシリコン酸化膜を形成する工程と、
前記シリコン酸化膜上に、第2レジスト膜を形成する工程と、
フォトリソグラフィ技術を用いて、前記第2レジスト膜を、所定のピッチを持つ第2レジストパターンに加工する工程と、
前記第1レジストパターン及び前記第2レジストパターンをマスクに用いて、前記薄膜を加工する工程と、
を具備することを特徴とする微細パターンの形成方法。 - 基板上に、薄膜を形成する工程と、
前記薄膜上に、前記薄膜とは異なる膜からなるハードマスク膜を形成する工程と、
前記ハードマスク膜上に、第1レジスト膜を形成する工程と、
フォトリソグラフィ技術を用いて、前記第1レジスト膜を、所定のピッチを持つ第1レジストパターンに加工する工程と、
有機シリコンを含むソースガスと活性化された酸素種とを交互に供給し、前記第1レジストパターン及び前記ハードマスク膜上に、前記ハードマスク膜及び前記第1レジストパターンとは異なるシリコン酸化膜を形成する工程と、
前記シリコン酸化膜上に、第2レジスト膜を形成する工程と、
フォトリソグラフィ技術を用いて、前記第2レジスト膜を、所定のピッチを持つ第2レジストパターンに加工する工程と、
前記第1レジストパターン及び前記第2レジストパターンをマスクに用いて、前記ハードマスク膜を加工する工程と、
前記加工されたハードマスク膜をマスクに用いて、前記薄膜を加工する工程と、
を具備することを特徴とする微細パターンの形成方法。 - 前記第1レジスト膜を形成する工程の前に、前記ハードマスク膜上に、第1反射防止膜を形成する工程、をさらに具備することを特徴とする請求項2に記載の微細パターンの形成方法。
- 前記第1レジスト膜を形成する工程の前に、前記ハードマスク膜上に、第1反射防止膜を形成する工程と、
前記第2レジスト膜を形成する工程の前に、前記シリコン酸化膜上に、第2反射防止膜を形成する工程と、をさらに具備することを特徴とする請求項2に記載の微細パターンの形成方法。 - 前記第2反射防止膜の上面が平坦化されることを特徴とする請求項4に記載の微細パターンの形成方法。
- 前記第1レジスト膜を前記第1レジストパターンに加工する工程の後に、前記第1レジストパターンをトリミングする工程と、
前記第2レジスト膜を前記第2レジストパターンに加工する工程の後に、前記第2レジストパターンをトリミングする工程と、をさらに具備することを特徴とする請求項1乃至請求項5いずれか一項に記載の微細パターンの形成方法。 - 前記第1レジストパターンをトリミングする工程と、前記シリコン酸化膜を形成する工程とを、同一の成膜装置内で連続して行うことを特徴とする請求項6に記載の微細パターンの形成方法。
- 前記第1レジストパターンをトリミングする工程と前記第2レジストパターンをトリミングする工程とのうち、少なくとも一方は酸素含有ガスプラズマ、またはオゾンガスを用いてレジストパターンをトリミングすることを特徴とする請求項6又は請求項7に記載の微細パターンの形成方法。
- 前記ソースガスとして、アミノシラン系プリカーサーを用いることを特徴とする請求項1乃至請求項8いずれか一項に記載の微細パターンの形成方法。
- 前記アミノシラン系プリカーサーは、1価または2価のアミノシラン系プリカーサーであることを特徴とする請求項9に記載の微細パターンの形成方法。
- 前記1価または2価のアミノシラン系プリカーサーは、
BTBAS(ビスターシャリブチルアミノシラン)、
BDMAS(ビスジメチルアミノシラン)、
BDEAS(ビスジエチルアミノシラン)、
DMAS(ジメチルアミノシラン)、
DEAS(ジエチルアミノシラン)、
DPAS(ジプロピルアミノシラン)、
BAS(ブチルアミノシラン)、
DIPAS(ジイソプロピルアミノシラン)、
BEMAS(ビスエチルメチルアミノシラン)、
から選択された少なくとも1種を用いることを特徴とする請求項10に記載の微細パターンの形成方法。 - 前記活性化された酸素種として、プラズマにより励起された酸素ラジカルを用いることを特徴とする請求項1乃至請求項11いずれか一項に記載の微細パターンの形成方法。
- 前記プラズマにより励起された酸素ラジカルは、O2ガス、NOガス、N2Oガス、H2Oガス、O3ガスのいずれかから選択される少なくとも1種をプラズマ化して得ることを特徴とする請求項12に記載の微細パターンの形成方法。
- 前記シリコン酸化膜は真空保持可能な処理容器内で形成され、前記ソースガスを前記処理容器内へ供給する工程と、前記活性化された酸素種を前記処理容器内へ供給する工程とを交互に実施して形成することを特徴とする請求項1乃至請求項13いずれか一項に記載の微細パターンの形成方法。
- 前記ソースガスを前記処理容器内へ供給する工程と、前記活性化された酸素種を前記処理容器内へ供給する工程との間に、前記処理容器内に残留しているガスを除去する工程を挿入することを特徴とする請求項14に記載の微細パターンの形成方法。
- 前記処理容器内に残留しているガスを除去する工程は、前記処理容器内を真空引きしながら前記処理容器内にパージガスを導入することを特徴とする請求項15に記載の微細パターンの形成方法。
- 前記シリコン酸化膜を形成する際の成膜温度が前記レジスト膜の耐熱温度以下であることを特徴とする請求項1乃至請求項16いずれか一項に記載の微細パターンの形成方法。
- 前記成膜温度は100℃以下であることを特徴とする請求項17に記載の微細パターンの形成方法。
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Also Published As
Publication number | Publication date |
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KR101217778B1 (ko) | 2013-01-02 |
JP4659856B2 (ja) | 2011-03-30 |
US20110237082A1 (en) | 2011-09-29 |
KR101101785B1 (ko) | 2012-01-05 |
US7989354B2 (en) | 2011-08-02 |
WO2008149988A1 (ja) | 2008-12-11 |
KR20090096408A (ko) | 2009-09-10 |
TWI498941B (zh) | 2015-09-01 |
TW201145355A (en) | 2011-12-16 |
TWI364783B (ja) | 2012-05-21 |
KR20110117226A (ko) | 2011-10-26 |
KR20110036129A (ko) | 2011-04-06 |
US20100130015A1 (en) | 2010-05-27 |
JP5156086B2 (ja) | 2013-03-06 |
TW200917335A (en) | 2009-04-16 |
JP2011082560A (ja) | 2011-04-21 |
KR101073858B1 (ko) | 2011-10-14 |
US8383522B2 (en) | 2013-02-26 |
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