JP2010219105A - 基板処理方法 - Google Patents
基板処理方法 Download PDFInfo
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- JP2010219105A JP2010219105A JP2009061138A JP2009061138A JP2010219105A JP 2010219105 A JP2010219105 A JP 2010219105A JP 2009061138 A JP2009061138 A JP 2009061138A JP 2009061138 A JP2009061138 A JP 2009061138A JP 2010219105 A JP2010219105 A JP 2010219105A
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- 239000000758 substrate Substances 0.000 title claims abstract description 78
- 238000003672 processing method Methods 0.000 title claims abstract description 52
- 230000033558 biomineral tissue development Effects 0.000 claims abstract description 31
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 30
- 239000001301 oxygen Substances 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 25
- 230000001590 oxidative effect Effects 0.000 claims abstract description 21
- 238000001179 sorption measurement Methods 0.000 claims abstract description 20
- 230000003647 oxidation Effects 0.000 claims abstract description 18
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 230000001089 mineralizing effect Effects 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 140
- 238000000034 method Methods 0.000 claims description 31
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 65
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 230000005284 excitation Effects 0.000 abstract description 6
- 230000003014 reinforcing effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 39
- 238000006243 chemical reaction Methods 0.000 description 35
- 235000012431 wafers Nutrition 0.000 description 34
- 230000006870 function Effects 0.000 description 14
- 229910003481 amorphous carbon Inorganic materials 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000003860 storage Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 239000012895 dilution Substances 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
【解決手段】処理対象基板であるウエハWのマスク層としての、例えばフォトレジスト膜53からなる有機膜を無機化する無機化ステップは、フォトレジスト膜53の表面に1価のアミノシランを吸着させる吸着ステップと、吸着したアミノシランを、酸素をプラズマ励起した酸素ラジカルを用いて酸化し、これによってフォトレジスト膜53をSi酸化膜に改質する酸化ステップを有する。
【選択図】図4
Description
RC膜)及びマスク層(フォトレジスト膜)が順に積層された半導体デバイス用のウエハが知られている(例えば、特許文献1参照)。フォトレジスト膜は、フォトリソグラフィにより所定のパターンに形成され、反射防止膜及び導電膜のエッチングの際に、マスク層として機能する。
12 反応管
17 プラズマ発生部
22 プロセスモジュール
32 チャンバ
33 載置台
34 シャワーヘッド
40 ガス供給部
50 シリコン基材
51 アモルファスカーボン膜
52 反射防止膜(BARC膜)
53 フォトレジスト膜
54 開口部
55 Si酸化膜
Claims (10)
- 処理対象層と、マスク層としての有機膜を有する基板を処理する基板処理方法であって、前記有機膜を無機化する無機化ステップを有することを特徴とする基板処理方法。
- 前記無機化ステップは、前記有機膜の表面にSi含有ガスを吸着させる吸着ステップと、吸着したSi含有ガスを酸化してSi酸化膜に改質する酸化ステップを有することを特徴とする請求項1記載の基板処理方法。
- 前記Si含有ガスとして、1価のアミノシランを用いることを特徴とする請求項2記載の基板処理方法。
- 前記吸着ステップにおける処理圧力は、1.33×10−1Pa(1mTorr)〜1.33×10kPa(100Torr)であることを特徴とする請求項2又は3記載の基板処理方法。
- 前記吸着ステップにおける処理温度は、20℃〜700℃であることを特徴とする請求項2乃至4のいずれか1項に記載の基板処理方法。
- 前記酸化ステップにおいて、酸化ガスとして酸素含有ガスを用い、該酸素含有ガスをプラズマ励起した酸素ラジカルによって前記Si含有ガスを酸化することを特徴とする請求項2乃至5のいずれか1項に記載の基板処理方法。
- 前記酸化ステップにおける処理圧力は、1.33×10−1Pa(1mTorr)〜1.33×10kPa(100Torr)であることを特徴とする請求項2乃至6のいずれか1項に記載の基板処理方法。
- 前記酸化ステップにおける処理温度は、20℃〜700℃であることを特徴とする請求項2乃至7のいずれか1項に記載の基板処理方法。
- 前記マスク層における開口パターンを形成する線状部分の幅は、60nm以下であることを特徴とする請求項1乃至8のいずれか1項に記載に基板処理方法。
- 前記無機化ステップによって無機化された前記マスク層をエッチングして該マスク層の前記開口パターンを形成する線状部分の幅を調整するエッチングステップを有することを特徴とする請求項1乃至9のいずれか1項に記載の基板処理方法。
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JP2009061138A JP5275093B2 (ja) | 2009-03-13 | 2009-03-13 | 基板処理方法 |
US12/721,962 US8491804B2 (en) | 2009-03-13 | 2010-03-11 | Substrate processing method |
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JP2009061138A JP5275093B2 (ja) | 2009-03-13 | 2009-03-13 | 基板処理方法 |
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JP2010219105A true JP2010219105A (ja) | 2010-09-30 |
JP5275093B2 JP5275093B2 (ja) | 2013-08-28 |
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US (1) | US8491804B2 (ja) |
JP (1) | JP5275093B2 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010219106A (ja) * | 2009-03-13 | 2010-09-30 | Tokyo Electron Ltd | 基板処理方法 |
JP2012094652A (ja) * | 2010-10-26 | 2012-05-17 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
JP2015090916A (ja) * | 2013-11-06 | 2015-05-11 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
US9175395B2 (en) | 2010-10-26 | 2015-11-03 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device manufacturing method |
KR20160030378A (ko) * | 2014-09-09 | 2016-03-17 | 도쿄엘렉트론가부시키가이샤 | 서브-해상도 스케일들로 상이한 임계 치수들을 패터닝하기 위한 방법 |
KR20170041154A (ko) * | 2015-10-06 | 2017-04-14 | 도쿄엘렉트론가부시키가이샤 | 피처리체의 처리 방법 |
CN107658210A (zh) * | 2016-07-26 | 2018-02-02 | 株式会社日立国际电气 | 半导体器件的制造方法、衬底处理装置及记录介质 |
KR20180034167A (ko) * | 2016-09-26 | 2018-04-04 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법, 기록 매체 및 기판 처리 장치 |
JP2018147955A (ja) * | 2017-03-02 | 2018-09-20 | 株式会社日立国際電気 | 半導体装置の製造方法、プログラム及び記録媒体 |
KR20190095274A (ko) * | 2016-12-15 | 2019-08-14 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 처리 장치 |
JP7481997B2 (ja) | 2019-12-10 | 2024-05-13 | 東京エレクトロン株式会社 | 基板上のパターン形状を制御する方法及び装置 |
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JP5692850B2 (ja) * | 2010-12-28 | 2015-04-01 | 東京エレクトロン株式会社 | 薄膜形成方法、薄膜形成装置及びプログラム |
JP2014209558A (ja) * | 2013-03-27 | 2014-11-06 | 東京エレクトロン株式会社 | シリコン酸化膜の形成方法、及び、シリコン酸化膜の形成装置 |
JP6462161B2 (ja) * | 2016-02-09 | 2019-01-30 | 株式会社Kokusai Electric | 基板処理装置および半導体装置の製造方法 |
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2009
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2010
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Patent Citations (4)
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Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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