JP5692850B2 - 薄膜形成方法、薄膜形成装置及びプログラム - Google Patents
薄膜形成方法、薄膜形成装置及びプログラム Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 40
- 239000010409 thin film Substances 0.000 title claims description 34
- 238000006243 chemical reaction Methods 0.000 claims description 132
- 239000010408 film Substances 0.000 claims description 125
- 230000015572 biosynthetic process Effects 0.000 claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000001179 sorption measurement Methods 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 19
- 230000001590 oxidative effect Effects 0.000 claims description 17
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 89
- 235000012431 wafers Nutrition 0.000 description 49
- 239000004065 semiconductor Substances 0.000 description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 23
- 238000010926 purge Methods 0.000 description 20
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 18
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 description 2
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- WZUCGJVWOLJJAN-UHFFFAOYSA-N diethylaminosilicon Chemical compound CCN([Si])CC WZUCGJVWOLJJAN-UHFFFAOYSA-N 0.000 description 2
- AWFPGKLDLMAPMK-UHFFFAOYSA-N dimethylaminosilicon Chemical compound CN(C)[Si] AWFPGKLDLMAPMK-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UOERHRIFSQUTET-UHFFFAOYSA-N N-propyl-N-silylpropan-1-amine Chemical compound CCCN([SiH3])CCC UOERHRIFSQUTET-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000000274 adsorptive effect Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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Description
ロード温度に加熱された反応室内に被処理体を収容するロード工程と、
前記ロード工程で被処理体を収容した反応室内を成膜温度に加熱した後、該反応室内に成膜用ガスを供給して被処理体に薄膜を形成する薄膜形成工程と、を備え、
前記ロード工程では、前記反応室全体を加熱することにより前記反応室内を前記ロード温度に設定するとともに、前記ロード温度を前記成膜温度よりも高い温度に設定する、ことを特徴とする。
前記薄膜形成工程は、例えば、
前記反応室内にシリコンソースガスを供給し、前記被処理体にシリコンを吸着させるシリコン吸着工程と、
前記反応室内に酸化ガスを供給して、前記シリコン吸着工程で吸着されたシリコンを酸化し、前記被処理体にシリコン酸化膜を形成する酸化膜形成工程と、
を備え、
前記シリコン吸着工程と前記酸化膜形成工程とを複数回繰り返し、被処理体にシリコン酸化膜を形成する。
前記酸化膜形成工程では、前記反応室内を第2の成膜温度に加熱し、
前記ロード工程では、ロード温度を前記第1の成膜温度よりも高い温度に設定してもよい。
被処理体を収容する反応室と、
前記反応室内を所定の温度に加熱する加熱手段と、
前記反応室内に成膜用ガスを供給する成膜用ガス供給手段と、
装置の各部を制御する制御手段と、を備え、
前記制御手段は、
前記加熱手段を制御して前記反応室内をロード温度に加熱した後に当該反応室内に被処理体を収容し、
前記加熱手段を制御して前記反応室内を成膜温度に加熱した後、前記成膜用ガス供給手段を制御して当該反応室内に成膜用ガスを供給して被処理体に薄膜を形成し、
前記反応室全体を加熱することにより前記反応室内を前記ロード温度に設定するとともに、前記ロード温度を前記成膜温度よりも高い温度に設定する、ことを特徴とする。
コンピュータを、
被処理体を収容する反応室内を所定の温度に加熱する加熱手段、
前記反応室内に成膜用ガスを供給する成膜用ガス供給手段、
前記加熱手段を制御して前記反応室内をロード温度に加熱した後に当該反応室内に被処理体を収容し、前記加熱手段を制御して前記反応室内を成膜温度に加熱した後、前記成膜用ガス供給手段を制御して当該反応室内に成膜用ガスを供給して被処理体に薄膜を形成する成膜手段、
として機能させ、
前記成膜手段は、前記反応室全体を加熱することにより前記反応室内を前記ロード温度に設定するとともに、前記ロード温度を前記成膜温度よりも高い温度に設定する、ことを特徴とする。
圧力計(群)123は、反応管2内、排気管5内等の各部の圧力を測定し、その測定値を制御部100に通知する。
RAM113は、CPU115のワークエリアなどとして機能する。
バス116は、各部の間で情報を伝達する。
続いて、再び、吸着ステップから始まる1サイクルを開始する。そして、このサイクルを所定回、例えば、100サイクル実行する(繰り返す)ことにより、半導体ウエハW上に所望厚のシリコン酸化膜が形成される。
2 反応管
3 頂部
4 排気口
5 排気管
6 蓋体
7 保温筒
8 ヒータ
9 支持体
10 回転テーブル
11 ウエハボート
12 回転支柱
13 回転機構
14 回転軸
15 回転導入部
16 昇温用ヒータ
17 処理ガス導入管
18 パージガス供給管
100 制御部
111 レシピ記憶部
112 ROM
113 RAM
114 I/Oポート
115 CPU
116 バス
121 操作パネル
122 温度センサ
123 圧力計
124 ヒータコントローラ
125 MFC制御部
126 バルブ制御部
127 真空ポンプ
128 ボートエレベータ
W 半導体ウエハ
Claims (7)
- ロード温度に加熱された反応室内に被処理体を収容するロード工程と、
前記ロード工程で被処理体を収容した反応室内を成膜温度に加熱した後、該反応室内に成膜用ガスを供給して被処理体に薄膜を形成する薄膜形成工程と、を備え、
前記ロード工程では、前記反応室全体を加熱することにより前記反応室内を前記ロード温度に設定するとともに、前記ロード温度を前記成膜温度よりも高い温度に設定する、ことを特徴とする薄膜形成方法。 - 前記ロード工程では、前記ロード温度を前記成膜温度よりも20℃〜80℃高い温度に設定する、ことを特徴とする請求項1に記載の薄膜形成方法。
- 前記薄膜形成工程は、
前記反応室内にシリコンソースガスを供給し、前記被処理体にシリコンを吸着させるシリコン吸着工程と、
前記反応室内に酸化ガスを供給して、前記シリコン吸着工程で吸着されたシリコンを酸化し、前記被処理体にシリコン酸化膜を形成する酸化膜形成工程と、
を備え、
前記シリコン吸着工程と前記酸化膜形成工程とを複数回繰り返し、被処理体にシリコン酸化膜を形成する、ことを特徴とする請求項1または2に記載の薄膜形成方法。 - 前記シリコン吸着工程では、前記反応室内を第1の成膜温度に加熱し、
前記酸化膜形成工程では、前記反応室内を第2の成膜温度に加熱し、
前記ロード工程では、ロード温度を前記第1の成膜温度よりも高い温度に設定する、ことを特徴とする請求項3に記載の薄膜形成方法。 - 前記シリコン吸着工程では、前記シリコンソースガスに1価または2価のアミノシランガスを用いる、ことを特徴とする請求項3または4に記載の薄膜形成方法。
- 被処理体を収容する反応室と、
前記反応室内を所定の温度に加熱する加熱手段と、
前記反応室内に成膜用ガスを供給する成膜用ガス供給手段と、
装置の各部を制御する制御手段と、を備え、
前記制御手段は、
前記加熱手段を制御して前記反応室内をロード温度に加熱した後に当該反応室内に被処理体を収容し、
前記加熱手段を制御して前記反応室内を成膜温度に加熱した後、前記成膜用ガス供給手段を制御して当該反応室内に成膜用ガスを供給して被処理体に薄膜を形成し、
前記反応室全体を加熱することにより前記反応室内を前記ロード温度に設定するとともに、前記ロード温度を前記成膜温度よりも高い温度に設定する、ことを特徴とする薄膜形成装置。 - コンピュータを、
被処理体を収容する反応室内を所定の温度に加熱する加熱手段、
前記反応室内に成膜用ガスを供給する成膜用ガス供給手段、
前記加熱手段を制御して前記反応室内をロード温度に加熱した後に当該反応室内に被処理体を収容し、前記加熱手段を制御して前記反応室内を成膜温度に加熱した後、前記成膜用ガス供給手段を制御して当該反応室内に成膜用ガスを供給して被処理体に薄膜を形成する成膜手段、
として機能させ、
前記成膜手段は、前記反応室全体を加熱することにより前記反応室内を前記ロード温度に設定するとともに、前記ロード温度を前記成膜温度よりも高い温度に設定する、ことを特徴とするプログラム。
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TW100147786A TWI544104B (zh) | 2010-12-28 | 2011-12-21 | 薄膜形成方法 |
KR1020110139317A KR101498496B1 (ko) | 2010-12-28 | 2011-12-21 | 박막 형성 방법, 박막 형성 장치 및 프로그램이 기록된 기록 매체 |
US13/337,743 US8642486B2 (en) | 2010-12-28 | 2011-12-27 | Thin film forming method, thin film forming apparatus, and program |
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CN103426788B (zh) * | 2012-05-21 | 2016-09-14 | 理想能源设备(上海)有限公司 | 在集成系统中制作半导体器件及调节基板温度的方法 |
JP2014209558A (ja) * | 2013-03-27 | 2014-11-06 | 東京エレクトロン株式会社 | シリコン酸化膜の形成方法、及び、シリコン酸化膜の形成装置 |
JP2015122481A (ja) * | 2013-11-22 | 2015-07-02 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
JP6237264B2 (ja) * | 2014-01-24 | 2017-11-29 | 東京エレクトロン株式会社 | 縦型熱処理装置、熱処理方法及び記憶媒体 |
JP6832776B2 (ja) * | 2017-03-30 | 2021-02-24 | 東京エレクトロン株式会社 | 選択成長方法 |
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US20030231698A1 (en) * | 2002-03-29 | 2003-12-18 | Takatomo Yamaguchi | Apparatus and method for fabricating a semiconductor device and a heat treatment apparatus |
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