JP6895352B2 - 被加工物を処理する方法 - Google Patents
被加工物を処理する方法 Download PDFInfo
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- JP6895352B2 JP6895352B2 JP2017174957A JP2017174957A JP6895352B2 JP 6895352 B2 JP6895352 B2 JP 6895352B2 JP 2017174957 A JP2017174957 A JP 2017174957A JP 2017174957 A JP2017174957 A JP 2017174957A JP 6895352 B2 JP6895352 B2 JP 6895352B2
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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Description
<実験の条件>
工程ST21
内部空間12sの圧力:800mTorr(107Pa)
WF6ガスの流量:170sccm
キャリアガス(Arガス)の流量:600sccm
処理時間:10秒又は30秒
工程ST22
内部空間12sの圧力:800mTorr(107Pa)
キャリアガス(Arガス)の流量:800sccm
処理時間:30秒
工程ST23
内部空間12sの圧力:800mTorr(107Pa)
H2ガスの流量:500sccm
キャリアガス(Arガス)の流量:600sccm
第1の高周波:100MHz、500W
第2の高周波:0W
処理時間:3秒
工程ST24
内部空間12sの圧力:800mTorr(107Pa)
キャリアガス(Arガス)の流量:800sccm
処理時間:30秒
Claims (7)
- 被加工物を処理する方法であって、
前記被加工物は、下地膜、及び、該下地膜上に設けられたマスクを有し、該マスクは、開口を提供しており、
該方法は、
前記被加工物上にタングステン膜を形成する工程であり、該タングステン膜は、前記開口を画成する前記マスクの側壁面に沿って延在する第1領域、及び、前記下地膜上で延在する第2領域を含む、該工程と、
前記第1領域を残し、前記第2領域を除去するように、前記タングステン膜のプラズマエッチングを実行する工程と、
を含み、
タングステン膜を形成する前記工程は、
前記被加工物上にタングステンを含有する前駆体を堆積させるために、前記被加工物に、タングステンを含有する前駆体ガスを供給する工程と、
前記被加工物上の前記前駆体に水素の活性種を供給するために、水素ガスのプラズマを生成する工程と、
を含み、
タングステン膜を形成する前記工程における前記被加工物の温度は、0℃以下である、方法。 - 被加工物を処理する方法であって、
前記被加工物は、下地膜、及び、該下地膜上に設けられたマスクを有し、該マスクは、開口を提供しており、
該方法は、
前記被加工物上にタングステン膜を形成する工程であり、該タングステン膜は、前記開口を画成する前記マスクの側壁面に沿って延在する第1領域、及び、前記下地膜上で延在する第2領域を含む、該工程と、
前記第1領域を残し、前記第2領域を除去するように、前記タングステン膜のプラズマエッチングを実行する工程と、
を含み、
タングステン膜を形成する前記工程は、
前記被加工物上にタングステンを含有する前駆体を堆積させるために、前記被加工物に、タングステンを含有する前駆体ガスを供給する工程と、
前記被加工物上の前記前駆体に水素の活性種を供給するために、水素ガスのプラズマを生成する工程と、
を含み、光学測定装置によって測定された前記開口の幅を基準値に近づけるように前記タングステン膜を形成する、
方法。 - タングステン膜を形成する前記工程では、前駆体ガスを供給する前記工程と水素ガスのプラズマを生成する前記工程とを各々が含む複数回のサイクルが実行される、請求項1又は2に記載の方法。
- 前記前駆体ガスは、ハロゲン化タングステンガスである、請求項1〜3の何れか一項に記載の方法。
- 前記前駆体ガスは、六フッ化タングステンガスである、請求項1〜3の何れか一項に記載の方法。
- 被加工物を処理する方法であって、
前記被加工物は、下地膜、及び、該下地膜上に設けられたマスクを有し、該マスクは、開口を提供しており、
該方法は、
前記被加工物上にタングステン膜を形成する工程であり、該タングステン膜は、前記開口を画成する前記マスクの側壁面に沿って延在する第1領域、及び、前記下地膜上で延在する第2領域を含む、該工程と、
前記第1領域を残し、前記第2領域を除去するように、前記タングステン膜のプラズマエッチングを実行する工程と、
を含み、
タングステン膜を形成する前記工程は、
前記被加工物上にタングステンを含有する前駆体を堆積させるために、前記被加工物に、タングステンを含有する前駆体ガスを供給する工程と、
前記被加工物上の前記前駆体に水素の活性種を供給するために、水素ガスのプラズマを生成する工程と、
を含み、
前記被加工物は、シリコン含有膜、該シリコン含有膜上に設けられた有機膜、該有機膜上に設けられたシリコン含有の反射防止膜、該反射防止膜上に設けられたレジストマスクを有し、
前記シリコン含有膜は、シリコンから形成された第1の膜、及び、該第1の膜上に設けられた第2の膜であり、酸化シリコンから形成された該第2の膜を有し、
前記下地膜は前記反射防止膜であり、前記下地膜上に設けられた前記マスクは前記レジストマスクであり、
該方法は、
前記タングステン膜のプラズマエッチングを実行する前記工程の実行後に、前記反射防止膜のプラズマエッチングを実行する工程と、
前記有機膜のプラズマエッチングを実行する工程であり、該有機膜から有機マスクを形成する、該工程と、
前記第2の膜のプラズマエッチングを実行する工程と、
前記有機マスクを除去する工程と、
前記第1の膜のプラズマエッチングを実行する工程と、
を更に含む、方法。 - 被加工物を処理する方法であって、
前記被加工物は、下地膜、及び、該下地膜上に設けられたマスクを有し、該マスクは、開口を提供しており、
該方法は、
前記被加工物上にタングステン膜を形成する工程であり、該タングステン膜は、前記開口を画成する前記マスクの側壁面に沿って延在する第1領域、及び、前記下地膜上で延在する第2領域を含む、該工程と、
前記第1領域を残し、前記第2領域を除去するように、前記タングステン膜のプラズマエッチングを実行する工程と、
を含み、
タングステン膜を形成する前記工程は、
前記被加工物上にタングステンを含有する前駆体を堆積させるために、前記被加工物に、タングステンを含有する前駆体ガスを供給する工程と、
前記被加工物上の前記前駆体に水素の活性種を供給するために、水素ガスのプラズマを生成する工程と、
を含み、
前記被加工物は、シリコン含有膜、該シリコン含有膜上に設けられた有機膜、該有機膜上に設けられたシリコン含有の反射防止膜、該反射防止膜上に設けられたレジストマスクを有し、
前記シリコン含有膜は、シリコンから形成された第1の膜、及び、該第1の膜上に設けられた第2の膜であり、酸化シリコンから形成された該第2の膜を有し、
前記下地膜は前記第1の膜であり、前記マスクは前記第2の膜から形成されるマスクであり、
該方法は、
前記反射防止膜のプラズマエッチングを実行する工程と、
前記有機膜のプラズマエッチングを実行する工程であり、該有機膜から有機マスクを形成する、該工程と、
前記第2の膜のプラズマエッチングを実行する工程と、
前記有機マスクを除去する工程と、
前記第1の膜のプラズマエッチングを実行する工程と、
を更に含み、
タングステン膜を形成する前記工程、及び、前記タングステン膜のプラズマエッチングを実行する前記工程は、有機マスクを除去する前記工程と前記第1の膜のプラズマエッチングを実行する前記工程との間で実行される、
方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017174957A JP6895352B2 (ja) | 2017-09-12 | 2017-09-12 | 被加工物を処理する方法 |
TW107130756A TWI774836B (zh) | 2017-09-12 | 2018-09-03 | 被加工物之處理方法 |
US16/127,468 US10685848B2 (en) | 2017-09-12 | 2018-09-11 | Workpiece processing method |
KR1020180108160A KR102637440B1 (ko) | 2017-09-12 | 2018-09-11 | 피가공물을 처리하는 방법 |
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