JP7061653B2 - 被処理体を処理する方法 - Google Patents
被処理体を処理する方法 Download PDFInfo
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- JP7061653B2 JP7061653B2 JP2020178083A JP2020178083A JP7061653B2 JP 7061653 B2 JP7061653 B2 JP 7061653B2 JP 2020178083 A JP2020178083 A JP 2020178083A JP 2020178083 A JP2020178083 A JP 2020178083A JP 7061653 B2 JP7061653 B2 JP 7061653B2
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- gas
- mask
- plasma
- film
- layer
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- 239000010703 silicon Substances 0.000 claims description 26
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- -1 fluorine radicals Chemical class 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 12
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
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- WMFYOYKPJLRMJI-UHFFFAOYSA-N Lercanidipine hydrochloride Chemical compound Cl.COC(=O)C1=C(C)NC(C)=C(C(=O)OC(C)(C)CN(C)CCC(C=2C=CC=CC=2)C=2C=CC=CC=2)C1C1=CC=CC([N+]([O-])=O)=C1 WMFYOYKPJLRMJI-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
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- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
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- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
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- 229920006254 polymer film Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
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- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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Description
<ウエハ(密)>
・マスクMK1のマスク幅の値(W1[nm])と開口OP1の幅の値(W2[nm])との比(W1:W2):1対1(1:1)
・マスクMK1のマスク高の値(HG1[nm]):40[nm]
・マスクMK1の開口OP1の幅の値(W2[nm]):45.0[nm]
<ウエハ(疎)>
・マスクMK1のマスク幅の値(W1[nm])と開口OP1の幅の値(W2[nm])との比(W1:W2):1対5(1:5)
・マスクMK1のマスク高の値(HG1[nm]):40[nm]
・マスクMK1の開口OP1の幅の値(W2[nm]):225[nm]
<条件>
(反射防止膜ALのエッチング)
・処理容器12内の圧力の値[mTorr]:15[mTorr]
・第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、400[W]
・第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、100[W]
・処理ガス:CF4ガス
・処理ガスの流量[sccm]:150[sccm]
・処理時間[s]:30[s]
(有機膜OLのエッチング)
・処理容器12内の圧力の値[mTorr]:20[mTorr]
・第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、1000[W]
・第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、200[W]
・処理ガス:N2/H2ガス
・処理ガスの流量[sccm]:(N2ガス)200[sccm]、(H2ガス)200[sccm]
・処理時間[s]:40[s]
<条件>
(第1のガスを供給:工程ST6a)
・工程ST6aにおける処理容器12内の圧力の値[mTorr]:30[mTorr]
・工程ST6aにおける第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、100[W]
・工程ST6aにおける第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、0[W]
・電源70の直流電圧の値[V]:-1000[V]
・工程ST6aにおける処理ガス:CF4/Arガス
・工程ST6aにおける処理ガスの流量[sccm]:(CF4ガス)300[sccm]、(Arガス)300[sccm]
・工程ST6aにおける処理時間[s]:10[s]
(第2のガスのプラズマを生成:工程ST6c)
・工程ST6cにおける処理容器12内の圧力の値[mTorr]:30[mTorr]
・工程ST6cにおける第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、100[W]
・工程ST6cにおける第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、30[W]
・工程ST6cにおける処理ガス:Arガス
・工程ST6cにおける処理ガスの流量[sccm]:300[sccm]
・処理時間[s]:25[s]
(シーケンスSQ2の終了の判定:工程S7)
・シーケンスSQ2の繰り返し回数:30回
(有機膜OLをエッチング:工程ST8)
・処理容器12内の圧力の値[mTorr]:20[mTorr]
・第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、1000[W]
・第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、200[W]
・処理ガス:N2/H2ガス
・処理ガスの流量[sccm]:(N2ガス)200[sccm]、(H2ガス)200[sccm]
・処理時間[s]:45[s]
<条件>
(二次電子の照射:工程ST2)
・処理容器12内の圧力の値[mTorr]:30[mTorr]
・第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、100[W]
・第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、0[W]
・電源70の直流電圧の値[V]:-1000[V]
・処理ガス:H2/Arガス
・処理ガスの流量[sccm]:(H2ガス)60[sccm]、(Arガス)300[sccm]
・処理時間[s]:10[s]
(第1のガスを供給:工程ST3a)
・処理容器12内の圧力の値[mTorr]:500[mTorr]
・第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、0[W]
・第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、0[W]
・処理ガス:有機を含んだアミノシラン系ガス
・処理ガスの流量[sccm]:50[sccm]
・処理時間[s]:15[s]
(第2のガスを供給:工程ST3c)
・処理容器12内の圧力の値[mTorr]:200[mTorr]
・第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、300[W]
・パルス周波数:10[kHz]、50%
・第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、0[W]
・処理ガス:CO2ガス
・処理ガスの流量[sccm]:300[sccm]
・処理時間[s]:5[s]
(シーケンスSQ1の終了の判定:工程S4)
・シーケンスSQ1の繰り返し回数:20回
(エッチバック:工程ST5)
・処理容器12内の圧力の値[mTorr]:50[mTorr]
・第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、300[W]
・第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、150[W]
・電源70の直流電圧の値[V]:0[V]
・処理ガス:CF4ガス
・処理ガスの流量[sccm]:150[sccm]
・処理時間[s]:4[s]
(第3のガスのプラズマを生成:工程ST6a)
・工程ST6aにおける処理容器12内の圧力の値[mTorr]:30[mTorr]
・工程ST6aにおける第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、100[W]
・工程ST6aにおける第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、0[W]
・電源70の直流電圧の値[V]:-1000[V]
・工程ST6aにおける処理ガス:CF4/Arガス
・工程ST6aにおける処理ガスの流量[sccm]:(CF4ガス)300[sccm]、(Arガス)300[sccm]
・工程ST6aにおける処理時間[s]:10[s]
(第4のガスのプラズマを生成:工程ST6c)
・工程ST6cにおける処理容器12内の圧力の値[mTorr]:30[mTorr]
・工程ST6cにおける第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、100[W]
・工程ST6cにおける第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、0[W]
・電源70の直流電圧の値[V]:0[V]
・工程ST6cにおける処理ガス:Arガス
・工程ST6cにおける処理ガスの流量[sccm]:300[sccm]
・処理時間[s]:25[s]
(シーケンスSQ2の終了の判定:工程S7)
・シーケンスSQ2の繰り返し回数:30回
(有機膜OLのエッチング:工程ST8)
・処理容器12内の圧力の値[mTorr]:20[mTorr]
・第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、1000[W]
・第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、200[W]
・処理ガス:N2/H2ガス
・処理ガスの流量[sccm]:(N2ガス)200[sccm]、(H2ガス)200[sccm]
・処理時間[s]:45[s]
Claims (16)
- (a)被エッチング層と、前記被エッチング層上に設けられた有機膜と、前記有機膜上に設けられた反射防止膜と、前記反射防止膜上に設けられたマスクと、を有する基板を提供する工程と、
(b)前記マスクの表面に保護膜を形成する工程と、
(c)前記工程(b)に続いて、前記保護膜が形成された前記マスクを用いて、前記反射防止膜をエッチングする工程と、
を備え、
前記工程(b)は、
(b-1)第1のガスを供給することにより、前記マスクの表面に前駆体の層を形成する工程と、
(b-2)第2のガスからプラズマを生成することにより、前記前駆体の層から前記保護膜を形成する工程と、
を含み、
前記工程(c)は、
(c-1)第3のガスからプラズマを生成することにより、前記プラズマに含まれるラジカルを含む混合層を形成する工程と、
(c-2)第4のガスからプラズマを生成することにより、前記混合層を除去する工程と、
を含む、
プラズマ処理方法。 - 前記第1のガスは、シリコン含有ガスを含む、
請求項1に記載のプラズマ処理方法。 - 前記工程(b-1)では、プラズマを用いずに前記前駆体の層を形成する、
請求項1または請求項2に記載のプラズマ処理方法。 - 前記第2のガスは、酸素原子及び炭素原子を含有するガスを含む、
請求項1~3の何れか一項に記載のプラズマ処理方法。 - 前記第2のガスは、二酸化炭素を含む、
請求項1~4の何れか一項に記載のプラズマ処理方法。 - 前記保護膜は、Si-O結合を含む、
請求項1~5の何れか一項に記載のプラズマ処理方法。 - 前記保護膜は、シリコン酸化物を含む、
請求項1~6の何れか一項に記載のプラズマ処理方法。 - 前記工程(b)において、前記工程(b-1)と前記工程(b-2)を含むシーケンスを繰り返し実行する、
請求項1~7の何れか一項に記載のプラズマ処理方法。 - 前記第3のガスは、フルオロカーボン系ガスを含む、
請求項1~8の何れか一項に記載のプラズマ処理方法。 - 前記混合層は、炭素ラジカルとフッ素ラジカルを含む、
請求項1~9の何れか一項に記載のプラズマ処理方法。 - 前記第4のガスは希ガスを含む、
請求項1~10の何れか一項に記載のプラズマ処理方法。 - 前記工程(c-2)では、前記第4のガスから生成したプラズマにバイアス電圧を印加する、
請求項1~11の何れか一項に記載のプラズマ処理方法。 - 前記工程(c)において、前記工程(c-1)と前記工程(c-2)を含むシーケンスを繰り返し実行する、
請求項1~12の何れか一項に記載のプラズマ処理方法。 - 前記工程(a)~(c)は同一の処理容器で実行される、
請求項1~13の何れか一項に記載のプラズマ処理方法。 - 前記工程(c)は、前記工程(c-1)の前に、前記保護膜のうち、前記マスクの側面上で該側面に沿って延在する第1領域、及び、該マスクの上面の上および該第1領域上で延在している第2領域を除去する工程を更に含む、
請求項1~14の何れか一項に記載のプラズマ処理方法。 - ガス導入口及び排気口を有する処理容器と、
プラズマ生成用の高周波電源と、
制御部と、
を備え、
前記制御部は、
(a)被エッチング層と、前記被エッチング層上に設けられた有機膜と、前記有機膜上に設けられた反射防止膜と、前記反射防止膜上に設けられたマスクと、を有する基板を提供する工程と、
(b)前記マスクの表面に保護膜を形成する工程と、
(c)前記工程(b)に続いて、前記保護膜が形成された前記マスクを用いて、前記反射防止膜をエッチングする工程と、
を備え、
前記工程(b)は、
(b-1)第1のガスを供給することにより、前記マスクの表面に前駆体の層を形成する工程と、
(b-2)第2のガスからプラズマを生成することにより、前記前駆体の層から前記保護膜を形成する工程と、
を含み、
前記工程(c)は、
(c-1)第3のガスからプラズマを生成することにより、前記プラズマに含まれるラジカルを含む混合層を形成する工程と、
(c-2)第4のガスからプラズマを生成することにより、前記混合層を除去する工程と、
を含む処理を実行するように構成される、
プラズマ処理装置。
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US10714340B2 (en) | 2020-07-14 |
TW201807742A (zh) | 2018-03-01 |
JP6784530B2 (ja) | 2020-11-11 |
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CN108885991B (zh) | 2023-06-30 |
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CN108885991A (zh) | 2018-11-23 |
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