JP6063264B2 - 被処理基体を処理する方法、及びプラズマ処理装置 - Google Patents
被処理基体を処理する方法、及びプラズマ処理装置 Download PDFInfo
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- JP6063264B2 JP6063264B2 JP2013004786A JP2013004786A JP6063264B2 JP 6063264 B2 JP6063264 B2 JP 6063264B2 JP 2013004786 A JP2013004786 A JP 2013004786A JP 2013004786 A JP2013004786 A JP 2013004786A JP 6063264 B2 JP6063264 B2 JP 6063264B2
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- 238000012545 processing Methods 0.000 title claims description 158
- 239000000758 substrate Substances 0.000 title claims description 116
- 238000000034 method Methods 0.000 title claims description 74
- 239000007789 gas Substances 0.000 claims description 244
- 238000005530 etching Methods 0.000 claims description 88
- 239000001257 hydrogen Substances 0.000 claims description 38
- 229910052739 hydrogen Inorganic materials 0.000 claims description 38
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 230000005284 excitation Effects 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 239000003507 refrigerant Substances 0.000 description 23
- 238000009792 diffusion process Methods 0.000 description 15
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 12
- 238000009826 distribution Methods 0.000 description 12
- 229910052731 fluorine Inorganic materials 0.000 description 12
- 239000011737 fluorine Substances 0.000 description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 10
- 238000012546 transfer Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 4
- 238000003917 TEM image Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 241000894007 species Species 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 240000006829 Ficus sundaica Species 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- -1 fluorine ions Chemical class 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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Description
Pe=uL/DAB …(1)
ここで、uはガスの流速[m/s]であり、DABはガス種の相互拡散係数[m2/s]であり、Lは代表長さであり、被処理基体Wの半径である。
τ=(P×V)/(Q) …(2)
処理空間Sの圧力Pとガスの流量Qを固定すると、載置台14と上部電極34との間の距離の増加と共に、処理空間Sの容積Vが増加し、これに伴ってレジデンスタイムが増加する。レジデンスタイムが長くなると、処理空間S内にガスが留まり易くなり、処理空間S内でのガスの「流れ」成分と「拡散」成分では、「拡散」成分が支配的となる。図10は、処理空間Sの圧力が10mTorr(1.333Pa)で一定であり、ガスの流量が20sccmで一定であるときの、載置台14と上部電極34との間の距離とレジデンスタイムとの関係を示すである。例えば、レジデンスタイムが約0.05秒以上であるときに、ガスの流れにおいては、拡散成分が支配的となる。したがって、第2の距離wGは、図10に示すように、100mm以上であるものと定義され得る。
高周波電源44の高周波電力の周波数:60MHz
高周波電源44の高周波電力のパワー:300W
高周波電源20の高周波電力の周波数:13MHz
高周波電源20の高周波電力のパワー:0W
H2ガス流量:120sccm
N2ガス流量:180sccm
バッファ室34cとバッファ室34dへのガスの分配比: 50対50
静電チャック18の中央領域の温度:30℃
静電チャック18のエッジ領域の温度:30℃
チラーユニット26の冷媒温度:10℃
CPI:36Step
高周波電源44の高周波電力の周波数:60MHz
高周波電源44の高周波電力のパワー:500W
高周波電源20の高周波電力の周波数:13MHz
高周波電源20の高周波電力のパワー:100W
CF4ガス流量:200sccm
バッファ室34cとバッファ室34dへのガスの分配比: 50対50
静電チャック18の中央領域の温度:30℃
静電チャック18のエッジ領域の温度:30℃
チラーユニット26の冷媒温度:10℃
CPI:36Step
上部電極34と載置台14の距離:150mm
エッチング時間:60秒
高周波電源44の高周波電力の周波数:60MHz
高周波電源44の高周波電力のパワー:500W
高周波電源20の高周波電力の周波数:13MHz
CF4ガス流量:200sccm
O2ガス流量:20sccm
バッファ室34cとバッファ室34dへのガスの分配比: 50対50
静電チャック18の中央領域の温度:30℃
静電チャック18のエッジ領域の温度:30℃
チラーユニット26の冷媒温度:10℃
上部電極34と載置台14の距離:150mm
CPI:36Step
エッチング時間:60秒
処理容器12内の圧力:10mTorr(1.33Pa)
高周波電源44の高周波電力の周波数:60MHz
高周波電源44の高周波電力のパワー:500W
高周波電源20の高周波電力の周波数:13MHz
高周波電源20の高周波電力のパワー:50W
バッファ室34cとバッファ室34dへのガスの分配比: 50対50
静電チャック18の中央領域の温度:30℃
静電チャック18のエッジ領域の温度:30℃
チラーユニット26の冷媒温度:10℃
CPI:36Step
エッチャントガス:CF4ガス(150sccm)、CHF3ガス(75sccm)、O2ガス(5sccm)
エッチング時間:終点検出(EPD)使用 226nm 43秒
処理容器12内の圧力:10mTorr(1.33Pa)
高周波電源44の高周波電力の周波数:60MHz
高周波電源44の高周波電力のパワー:500W
高周波電源20の高周波電力の周波数:13MHz
高周波電源20の高周波電力のパワー:100W
バッファ室34cとバッファ室34dへのガスの分配比: 50対50
静電チャック18の中央領域の温度:30℃
静電チャック18のエッジ領域の温度:30℃
チラーユニット26の冷媒温度:10℃
CPI:36Step
エッチャントガス:O2ガス(20sccm)、Arガス(200sccm)
エッチング時間:終点検出(EPD)使用 226nm 90秒
直径:300mm
被エッチング層EL:メタノシリケート層(500nm)
第1の層HL1:TiN層(30nm)
第2の層HL2:SOH層(200nm)
第3の層HL3:SiON層(30nm)
第4の層HL4:Si−ARC(35nm)
レジストマスクPRM:ArFレジストマスク(120nm)、50nmのライン幅及び50nmのスペース幅のライン・アンド・スペースパターン
処理容器12内の圧力:50mTorr(6.66Pa)
高周波電源44の高周波電力の周波数:60MHz
高周波電源44の高周波電力のパワー:300W
高周波電源20の高周波電力の周波数:13MHz
高周波電源20の高周波電力のパワー:0W
H2ガス流量:120sccm
N2ガス流量:180sccm
バッファ室34cとバッファ室34dへのガスの分配比: 50対50
静電チャック18の中央領域の温度:20℃
静電チャック18のエッジ領域の温度:20℃
チラーユニット26の冷媒温度:10℃
CPI:36Step
上部電極34と載置台14の距離:35mm
処理時間:20秒
処理容器12内の圧力:50mTorr(6.66Pa)
高周波電源44の高周波電力の周波数:60MHz
高周波電源44の高周波電力のパワー:300W
高周波電源20の高周波電力の周波数:13MHz
高周波電源20の高周波電力のパワー:0W
直流電源45の電圧:900V
ガス:H2ガス(100sccm)、Arガス(800sccm)
バッファ室34cとバッファ室34dへのガスの分配比: 50対50
静電チャック18の中央領域の温度:30℃
静電チャック18のエッジ領域の温度:30℃
チラーユニット26の冷媒温度:10℃
CPI:36Step
上部電極34と載置台14の距離:35mm
処理時間:20秒
処理容器12内の圧力:10mTorr(1.33Pa)
高周波電源44の高周波電力の周波数:60MHz
高周波電源44の高周波電力のパワー:500W
高周波電源20の高周波電力の周波数:13MHz
高周波電源20の高周波電力のパワー:50W
第4の層HL4のエッチャントガス:CF4ガス(150sccm)、CHF3ガス(75sccm)、O2ガス(5sccm)
第3の層HL3のエッチャントガス:CF4ガス(150sccm)、CHF3ガス(75sccm)、O2ガス(5sccm)
第2の層HL2のエッチャントガス:O2ガス(20sccm)、HBrガス(40sccm)、Heガス(200sccm)
第1の層HL1のエッチャントガス:Cl2ガス(30sccm)、Arガス(200sccm)、CH4ガス(10sccm)
バッファ室34cとバッファ室34dへのガスの分配比: 50対50
静電チャック18の中央領域の温度:30℃
静電チャック18のエッジ領域の温度:30℃
チラーユニット26の冷媒温度:10℃
CPI:36Step
上部電極34と載置台14の距離:100mm
第4の層HL4のエッチング時間:20秒
第3の層HL3のエッチング時間:20秒
第2の層HL2のエッチング時間:終点検出(EPD)使用 226nm 100秒
第1の層HL1のエッチング時間:30秒
処理容器12内の圧力:40mTorr(5.33Pa)
高周波電源44の高周波電力の周波数:60MHz
高周波電源44の高周波電力のパワー:100W
高周波電源20の高周波電力の周波数:13MHz
高周波電源20の高周波電力のパワー:200W
直流電源45の電圧(実験例11のみ印加):300V
エッチャントガス:CF4ガス(120sccm)、CH2F2ガス(12sccm)、C4F8ガス(3sccm)
バッファ室34cとバッファ室34dへのガスの分配比: 50対50
静電チャック18の中央領域の温度:30℃
静電チャック18のエッジ領域の温度:30℃
チラーユニット26の冷媒温度:10℃
CPI:36Step
上部電極34と載置台14の距離:40mm
高周波電源44の高周波電力の周波数:60MHz
高周波電源44の高周波電力のパワー:300W
高周波電源20の高周波電力の周波数:13MHz
高周波電源20の高周波電力のパワー:0W
直流電源45の電圧:1000V
H2ガス流量:100sccm
Arガス流量:800sccm
バッファ室34cとバッファ室34dへのガスの分配比: 50対50
静電チャック18の中央領域の温度:30℃
静電チャック18のエッジ領域の温度:30℃
チラーユニット26の冷媒温度:10℃
CPI:36Step
処理時間:20秒
プラズマ生成用の高周波電力の周波数:60MHz
プラズマ生成用の高周波電力のパワー:500W
高周波バイアス電力のパワー:0W
SiCl4ガス流量:25sccm
Heガス流量:200sccm
O2ガス流量:5sccm
処理時間:5秒
Claims (11)
- 被処理基体を処理する方法であって、該被処理基体は、被エッチング層、該被エッチング層上に設けられたハードマスク層、及び、該ハードマスク層上に設けられたレジストマスクを有し、該方法は、
処理容器内に設けられた載置台上に前記被処理基体を載置した状態で、該処理容器内において水素含有ガスのプラズマを励起することにより発生する水素の活性種に前記レジストマスクを曝す工程と、
前記水素の活性種により前記レジストマスクを曝す前記工程の後に、前記処理容器内おいてエッチャントガスのプラズマを励起して、前記ハードマスク層をエッチングする工程と、
を含み、
前記水素含有ガスのプラズマ及び前記エッチャントガスのプラズマは、上部電極にプラズマ励起用の高周波電力を印加して、該上部電極と該上部電極に対面配置された前記載置台を構成する下部電極との間に高周波電界を発生させることにより励起され、
前記ハードマスク層をエッチングする前記工程における前記上部電極と前記載置台との間の距離が、前記水素の活性種に前記レジストマスクを曝す前記工程における前記上部電極と前記載置台との間の距離よりも大きい、
方法。 - 前記ハードマスク層をエッチングする工程により前記ハードマスク層から形成されたハードマスクを用いて、前記被エッチング層をエッチングする工程を更に含み、
前記ハードマスクは、TiNから構成されており、
前記被エッチング層をエッチングする前記工程において、前記処理容器内においてフルオロカーボン系ガスのプラズマを生成し、
前記被エッチング層をエッチングする前記工程における前記上部電極と前記載置台との間の距離が、前記ハードマスク層をエッチングする前記工程における前記上部電極と前記載置台との間の距離よりも短い、
請求項1に記載の方法。 - 前記水素の活性種に前記レジストマスクを曝す前記工程中に、又は、前記水素の活性種に前記レジストマスクを曝す前記工程と前記ハードマスク層をエッチングする前記工程との間に、前記上部電極に負の直流電圧を印加する工程を更に含む、請求項1又は2に記載の方法。
- 前記被エッチング層をエッチングする前記工程において、前記上部電極に負の直流電圧が印加される、請求項1〜3の何れか一項に記載の方法。
- 前記上部電極は、シリコンを含有する請求項3又は4に記載の方法。
- 前記ハードマスク層をエッチングする前記工程における前記上部電極と前記載置台との間の距離は、前記載置台の上面におけるペクレ数が1以下となるように、設定される、請求項1〜5の何れか一項に記載の方法。
- 処理容器と、
下部電極を有し、前記処理容器内に配置された載置台と、
前記下部電極と対面配置された上部電極と、
前記載置台を、前記上部電極と前記下部電極とが配列された方向に移動させるための駆動機構と、
前記上部電極にプラズマ励起用の高周波電力を印加する高周波電源と、
前記処理容器内に、水素含有ガス、エッチャントガス、及び、フルオロカーボン系ガスを供給するガス供給系と、
前記駆動機構及び前記ガス供給系を制御する制御部と、
を備え、
前記制御部は、
前記駆動機構に前記上部電極と前記載置台との間の距離を第1の距離に設定させ、前記ガス供給系に前記水素含有ガスを供給させて、前記水素含有ガスのプラズマを発生させ、
次いで、前記駆動機構に前記上部電極と前記載置台との間の距離を前記第1の距離よりも大きい第2の距離に設定させ、前記ガス供給系に前記エッチャントガスを供給させて、前記エッチャントガスのプラズマを発生させ、
前記エッチャントガスのプラズマを発生させた後に、前記駆動機構に前記上部電極と前記載置台との間の距離を前記第2の距離よりも短い距離に設定させ、前記ガス供給系に前記フルオロカーボン系ガスを供給させて、前記フルオロカーボン系ガスのプラズマを発生させる、
プラズマ処理装置。 - 前記上部電極に接続されており、負の直流電圧を発生する直流電源を更に備え、前記制御部は、前記水素含有ガスのプラズマを発生させている期間中に、又は、前記水素含有ガスのプラズマを発生させた後且つ前記エッチャントガスのプラズマを発生させる前に、前記上部電極に負の直流電圧を印加するように前記直流電源を制御する、請求項7に記載のプラズマ処理装置。
- 前記上部電極に接続されており、負の直流電圧を発生する直流電源を更に備え、
前記制御部は、前記フルオロカーボン系ガスのプラズマを発生させている期間中に、前記上部電極に負の直流電圧を印加するように前記直流電源を制御する、請求項7に記載のプラズマ処理装置。 - 前記上部電極は、シリコンを含有する、請求項8又は9に記載のプラズマ処理装置。
- 前記第2の距離は、前記載置台の上面におけるペクレ数が1以下となるように設定される、請求項7〜10の何れか一項に記載のプラズマ処理装置。
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