JP2017183689A - 被処理体を処理する方法 - Google Patents
被処理体を処理する方法 Download PDFInfo
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- JP2017183689A JP2017183689A JP2016147477A JP2016147477A JP2017183689A JP 2017183689 A JP2017183689 A JP 2017183689A JP 2016147477 A JP2016147477 A JP 2016147477A JP 2016147477 A JP2016147477 A JP 2016147477A JP 2017183689 A JP2017183689 A JP 2017183689A
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- gas
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- 238000012545 processing Methods 0.000 title claims abstract description 162
- 238000000034 method Methods 0.000 title claims abstract description 158
- 238000005530 etching Methods 0.000 claims abstract description 58
- 230000001681 protective effect Effects 0.000 claims abstract description 57
- 239000007789 gas Substances 0.000 claims description 276
- 230000008569 process Effects 0.000 claims description 76
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 238000010926 purge Methods 0.000 claims description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 25
- -1 silicon oxide compound Chemical class 0.000 claims description 16
- 125000003277 amino group Chemical group 0.000 claims description 13
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 11
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 11
- 125000004432 carbon atom Chemical group C* 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 230000001629 suppression Effects 0.000 abstract description 6
- 230000006872 improvement Effects 0.000 abstract description 3
- 230000003667 anti-reflective effect Effects 0.000 abstract 4
- 239000010408 film Substances 0.000 description 190
- 239000010410 layer Substances 0.000 description 68
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- 150000002500 ions Chemical class 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 239000003507 refrigerant Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 9
- 150000001723 carbon free-radicals Chemical class 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- 150000003254 radicals Chemical class 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WMFYOYKPJLRMJI-UHFFFAOYSA-N Lercanidipine hydrochloride Chemical compound Cl.COC(=O)C1=C(C)NC(C)=C(C(=O)OC(C)(C)CN(C)CCC(C=2C=CC=CC=2)C=2C=CC=CC=2)C1C1=CC=CC([N+]([O-])=O)=C1 WMFYOYKPJLRMJI-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013036 cure process Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H—ELECTRICITY
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Abstract
【解決手段】一実施形態においてウエハWは被エッチング層ELと有機膜OLと反射防止膜ALとマスクMK1とを備え、一実施形態の方法MTは、このウエハWを収容したプラズマ処理装置10の処理容器12内において処理容器12内で発生させたプラズマによりマスクMK1を用いて反射防止膜ALに対しエッチング処理を行う工程を備え、当該工程はマスクMK1の表面に保護膜SXをコンフォーマルに形成する工程ST3a〜ST4と、保護膜SXが形成されたマスクMK1を用いて反射防止膜ALを原子層毎に除去することによって反射防止膜ALをエッチングする工程ST6a〜ST7とを備える。
【選択図】図1
Description
<ウエハ(密)>
・マスクMK1のマスク幅の値(W1[nm])と開口OP1の幅の値(W2[nm])との比(W1:W2):1対1(1:1)
・マスクMK1のマスク高の値(HG1[nm]):40[nm]
・マスクMK1の開口OP1の幅の値(W2[nm]):45.0[nm]
<ウエハ(疎)>
・マスクMK1のマスク幅の値(W1[nm])と開口OP1の幅の値(W2[nm])との比(W1:W2):1対5(1:5)
・マスクMK1のマスク高の値(HG1[nm]):40[nm]
・マスクMK1の開口OP1の幅の値(W2[nm]):225[nm]
<条件>
(反射防止膜ALのエッチング)
・処理容器12内の圧力の値[mTorr]:15[mTorr]
・第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、400[W]
・第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、100[W]
・処理ガス:CF4ガス
・処理ガスの流量[sccm]:150[sccm]
・処理時間[s]:30[s]
(有機膜OLのエッチング)
・処理容器12内の圧力の値[mTorr]:20[mTorr]
・第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、1000[W]
・第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、200[W]
・処理ガス:N2/H2ガス
・処理ガスの流量[sccm]:(N2ガス)200[sccm]、(H2ガス)200[sccm]
・処理時間[s]:40[s]
<条件>
(第1のガスを供給:工程ST6a)
・工程ST6aにおける処理容器12内の圧力の値[mTorr]:30[mTorr]
・工程ST6aにおける第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、100[W]
・工程ST6aにおける第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、0[W]
・電源70の直流電圧の値[V]:−1000[V]
・工程ST6aにおける処理ガス:CF4/Arガス
・工程ST6aにおける処理ガスの流量[sccm]:(CF4ガス)300[sccm]、(Arガス)300[sccm]
・工程ST6aにおける処理時間[s]:10[s]
(第2のガスのプラズマを生成:工程ST6c)
・工程ST6cにおける処理容器12内の圧力の値[mTorr]:30[mTorr]
・工程ST6cにおける第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、100[W]
・工程ST6cにおける第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、30[W]
・工程ST6cにおける処理ガス:Arガス
・工程ST6cにおける処理ガスの流量[sccm]:300[sccm]
・処理時間[s]:25[s]
(シーケンスSQ2の終了の判定:工程S7)
・シーケンスSQ2の繰り返し回数:30回
(有機膜OLをエッチング:工程ST8)
・処理容器12内の圧力の値[mTorr]:20[mTorr]
・第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、1000[W]
・第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、200[W]
・処理ガス:N2/H2ガス
・処理ガスの流量[sccm]:(N2ガス)200[sccm]、(H2ガス)200[sccm]
・処理時間[s]:45[s]
<条件>
(二次電子の照射:工程ST2)
・処理容器12内の圧力の値[mTorr]:30[mTorr]
・第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、100[W]
・第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、0[W]
・電源70の直流電圧の値[V]:−1000[V]
・処理ガス:H2/Arガス
・処理ガスの流量[sccm]:(H2ガス)60[sccm]、(Arガス)300[sccm]
・処理時間[s]:10[s]
(第1のガスを供給:工程ST3a)
・処理容器12内の圧力の値[mTorr]:500[mTorr]
・第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、0[W]
・第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、0[W]
・処理ガス:有機を含んだアミノシラン系ガス
・処理ガスの流量[sccm]:50[sccm]
・処理時間[s]:15[s]
(第2のガスを供給:工程ST3c)
・処理容器12内の圧力の値[mTorr]:200[mTorr]
・第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、300[W]
・パルス周波数:10[kHz]、50%
・第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、0[W]
・処理ガス:CO2ガス
・処理ガスの流量[sccm]:300[sccm]
・処理時間[s]:5[s]
(シーケンスSQ1の終了の判定:工程S4)
・シーケンスSQ1の繰り返し回数:20回
(エッチバック:工程ST5)
・処理容器12内の圧力の値[mTorr]:50[mTorr]
・第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、300[W]
・第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、150[W]
・電源70の直流電圧の値[V]:0[V]
・処理ガス:CF4ガス
・処理ガスの流量[sccm]:150[sccm]
・処理時間[s]:4[s]
(第3のガスのプラズマを生成:工程ST6a)
・工程ST6aにおける処理容器12内の圧力の値[mTorr]:30[mTorr]
・工程ST6aにおける第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、100[W]
・工程ST6aにおける第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、0[W]
・電源70の直流電圧の値[V]:−1000[V]
・工程ST6aにおける処理ガス:CF4/Arガス
・工程ST6aにおける処理ガスの流量[sccm]:(CF4ガス)300[sccm]、(Arガス)300[sccm]
・工程ST6aにおける処理時間[s]:10[s]
(第4のガスのプラズマを生成:工程ST6c)
・工程ST6cにおける処理容器12内の圧力の値[mTorr]:30[mTorr]
・工程ST6cにおける第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、100[W]
・工程ST6cにおける第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、0[W]
・電源70の直流電圧の値[V]:0[V]
・工程ST6cにおける処理ガス:Arガス
・工程ST6cにおける処理ガスの流量[sccm]:300[sccm]
・処理時間[s]:25[s]
(シーケンスSQ2の終了の判定:工程S7)
・シーケンスSQ2の繰り返し回数:30回
(有機膜OLのエッチング:工程ST8)
・処理容器12内の圧力の値[mTorr]:20[mTorr]
・第1の高周波電源62の周波数の値[MHz]および高周波電力の値[W]:60[MHz]、1000[W]
・第2の高周波電源64の周波数の値[MHz]およびバイアス電力の値[W]:13.56[MHz]、200[W]
・処理ガス:N2/H2ガス
・処理ガスの流量[sccm]:(N2ガス)200[sccm]、(H2ガス)200[sccm]
・処理時間[s]:45[s]
Claims (12)
- 被処理体を処理する方法であって、
前記被処理体は、被エッチング層と、該被エッチング層上に設けられた有機膜と、該有機膜上に設けられた反射防止膜と、該反射防止膜上に設けられた第1マスクと、を備え、
当該方法は、
前記被処理体が収容されたプラズマ処理装置の処理容器内において、前記第1マスクの表面に保護膜をコンフォーマルに形成する工程と、
前記保護膜をコンフォーマルに形成する前記工程の実行後に、該保護膜が形成された前記第1マスクを用いて、前記処理容器内で発生させたプラズマにより前記反射防止膜を原子層毎に除去し、該反射防止膜をエッチングする工程と、
を備える、
方法。 - 前記保護膜をコンフォーマルに形成する前記工程の実行前に、前記処理容器内でプラズマを発生させて前記処理容器に設けられた平行平板電極の上部電極に負の直流電圧を印可することにより、前記第1マスクに二次電子を照射する工程を更に備える、
請求項1に記載の方法。 - 前記上部電極の電極板は、シリコンを含有し、
前記第1マスクに二次電子を照射する前記工程は、前記処理容器内でプラズマを発生させて前記上部電極に負の直流電圧を印可することにより、前記電極板からシリコンを放出させて該シリコンを含む酸化シリコン化合物で前記第1マスクを覆う、
請求項2に記載の方法。 - 前記保護膜をコンフォーマルに形成する前記工程は、
前記処理容器内に第1のガスを供給する第1工程と、
前記第1工程の実行後に、前記処理容器内の空間をパージする第2工程と、
前記第2工程の実行後に、前記処理容器内において第2のガスのプラズマを生成する第3工程と、
前記第3工程の実行後に、前記処理容器内の空間をパージする第4工程と、
を含む第1シーケンスを繰り返し実行することによって、前記第1マスクの前記表面に前記保護膜をコンフォーマルに形成し、
前記第1工程は、前記第1のガスのプラズマを生成しない、
請求項1〜3の何れか一項に記載の方法。 - 前記第1のガスは、アミノシラン系ガスを含む、
請求項4に記載の方法。 - 前記第1のガスのアミノシラン系ガスは、1〜3個のケイ素原子を有するアミノシランを含む、請求項5に記載の方法。
- 前記第1のガスのアミノシラン系ガスは、1〜3個のアミノ基を有するアミノシランを含む、請求項5または請求項6に記載の方法。
- 前記第2のガスは、酸素原子および炭素原子を含有するガスを含む、
請求項4〜7の何れか一項に記載の方法。 - 前記反射防止膜をエッチングする前記工程は、
前記保護膜をコンフォーマルに形成する前記工程の実行後に、前記処理容器内において第3のガスのプラズマを生成し、該プラズマに含まれるラジカルを含む混合層を前記反射防止膜の表面の原子層に形成する第5工程と、
前記第5工程の実行後に、前記処理容器内の空間をパージする第6工程と、
前記第6工程の実行後に、前記処理容器内において第4のガスのプラズマを生成し、該プラズマにバイアス電圧を印可して、前記混合層を除去する第7工程と、
前記第7工程の実行後に、前記処理容器内の空間をパージする第8工程と、
を含む第2シーケンスを繰り返し実行し、前記反射防止膜を原子層毎に除去することによって、該反射防止膜をエッチングする、
請求項1〜8の何れか一項に記載の方法。 - 前記第3のガスは、フルオロカーボン系ガスと希ガスとを含む、
請求項9に記載の方法。 - 前記第4のガスは、希ガスを含む、
請求項9または請求項10に記載の方法。 - 前記反射防止膜をエッチングする前記工程の実行後に、前記処理容器内で発生させたプラズマにより、第2マスクを用いて前記有機膜に対しエッチング処理を行う工程を更に備え、
前記第2マスクは、前記反射防止膜をエッチングする前記工程において、前記第1マスクと該反射防止膜とから形成される、
請求項1〜11の何れか一項に記載の方法。
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JP2021007186A (ja) | 2021-01-21 |
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