JP6759004B2 - 被処理体を処理する方法 - Google Patents
被処理体を処理する方法 Download PDFInfo
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- JP6759004B2 JP6759004B2 JP2016167071A JP2016167071A JP6759004B2 JP 6759004 B2 JP6759004 B2 JP 6759004B2 JP 2016167071 A JP2016167071 A JP 2016167071A JP 2016167071 A JP2016167071 A JP 2016167071A JP 6759004 B2 JP6759004 B2 JP 6759004B2
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- gas
- processing container
- protective film
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- plasma
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- 238000000034 method Methods 0.000 title claims description 105
- 239000007789 gas Substances 0.000 claims description 226
- 230000001681 protective effect Effects 0.000 claims description 83
- 238000005530 etching Methods 0.000 claims description 50
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 43
- 238000010926 purge Methods 0.000 claims description 33
- 239000001301 oxygen Substances 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 16
- 125000003277 amino group Chemical group 0.000 claims description 15
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 12
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 10
- 229910001882 dioxygen Inorganic materials 0.000 claims description 10
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 8
- 239000001569 carbon dioxide Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 description 125
- 239000010410 layer Substances 0.000 description 56
- 239000002243 precursor Substances 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 239000003507 refrigerant Substances 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000013256 coordination polymer Substances 0.000 description 11
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 5
- YTAHJIFKAKIKAV-XNMGPUDCSA-N [(1R)-3-morpholin-4-yl-1-phenylpropyl] N-[(3S)-2-oxo-5-phenyl-1,3-dihydro-1,4-benzodiazepin-3-yl]carbamate Chemical compound O=C1[C@H](N=C(C2=C(N1)C=CC=C2)C1=CC=CC=C1)NC(O[C@H](CCN1CCOCC1)C1=CC=CC=C1)=O YTAHJIFKAKIKAV-XNMGPUDCSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 230000007261 regionalization Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- -1 for example Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01L21/31111—Etching inorganic layers by chemical means
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- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H01L21/02057—Cleaning during device manufacture
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3342—Resist stripping
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- H01J37/32165—Plural frequencies
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Description
<工程ST2>
・処理容器12内の圧力[mTorr]:80[mTorr]
・第1の高周波電源62の高周波電力の値[W]、周波数の値[MHz]:300[W]、40[MHz]
・第2の高周波電源64の高周波電力の値[W]、周波数の値[MHz]:25[W]、13[MHz]
・電源70の直流電圧の値[V]:0[V]
・処理ガス:C4F8/Ar/N2/O2ガス
・処理ガスの流量[sccm]:(C4F8ガス)30[sccm]、(Arガス)1000[sccm]、(N2ガス)20[sccm]、(O2ガス)10[sccm]
・処理時間[s]:30[s]
・処理容器12内の圧力[mTorr]:100[mTorr]
・第1の高周波電源62の高周波電力の値[W]:0[W]
・第2の高周波電源64の高周波電力の値[W]:0[W]
・電源70の直流電圧の値[V]:0[V]
・処理ガス(第1のガス):モノアミノシラン(H3−Si−R(Rはアミノ基))
・処理ガスの流量[sccm]:50[sccm]
・処理時間[s]:15[s]
・処理容器12内の圧力[mTorr]:200[mTorr]
・第1の高周波電源62の高周波電力の値[W]:300[W]、10[kHz]、Duty50
・第2の高周波電源64の高周波電力の値[W]:0[W]
・電源70の直流電圧の値[V]:0[V]
・処理ガス(第2のガス):CO2ガス
・処理ガスの流量[sccm]:300[sccm]
・処理時間[s]:5[s]
・繰り返し回数:5回
<シーケンスSQ1a>
・繰り返し回数:5回
Claims (11)
- 被処理体を処理する方法であって、該被処理体は、第1の凸部と第2の凸部と被エッチング層と溝部とを備えており、該被エッチング層は、該第1の凸部に含まれている領域と該第2の凸部に含まれている領域とを含んでおり、該溝部は、該被処理体の主面に設けられ、該被エッチング層に設けられ、該第1の凸部と該第2の凸部とによって画成されており、該溝部の内側の表面は、該被処理体の該主面に含まれており、該方法は、
第1のシーケンスをN(Nは2以上の整数)回繰り返し実行し、
前記第1のシーケンスは、
前記被処理体が収容されたプラズマ処理装置の処理容器内において、該被処理体の該主面に保護膜をコンフォーマルに形成する工程と、
前記保護膜をコンフォーマルに形成する前記工程の実行後において、処理容器内で発生させたガスのプラズマによって前記被処理体における前記溝部の底部をエッチングする工程と、
を備え、
マスクは、前記第1の凸部に含まれている領域上に形成されており、前記第2の凸部に含まれている領域上には形成されておらず、
前記マスク上に堆積膜が形成される、
方法。 - 前記保護膜をコンフォーマルに形成する前記工程では、
前記処理容器内に第1のガスを供給する工程と、
前記第1のガスを供給する前記工程の実行後に、前記処理容器内の空間をパージする工程と、
前記空間をパージする前記工程の実行後に、前記処理容器内において第2のガスのプラズマを生成する工程と、
前記第2のガスのプラズマを生成する前記工程の実行後に、前記処理容器内の空間をパージする工程と、
を含む第2のシーケンスを繰り返し実行することによって、前記被処理体の前記主面に前記保護膜をコンフォーマルに形成し、
前記第1のガスを供給する前記工程は、該第1のガスのプラズマを生成しない、
請求項1に記載の方法。 - 前記保護膜をコンフォーマルに形成する前記工程では、
前記処理容器内に第1のガスを供給する工程と、
前記第1のガスを供給する前記工程の実行後に、前記処理容器内の空間をパージする工程と、
を実行することによって、前記被処理体の前記主面に前記保護膜をコンフォーマルに形成し、
前記溝部の前記底部をエッチングする前記工程では、前記処理容器内で発生させた酸素を含有するガスのプラズマによって前記被処理体における該溝部の該底部をエッチングし、
前記第1のガスを供給する前記工程は、該第1のガスのプラズマを生成しない、
請求項1に記載の方法。 - 被処理体を処理する方法であって、該被処理体は、第1の凸部と第2の凸部と被エッチング層と溝部とを備えており、該被エッチング層は、該第1の凸部に含まれている領域と該第2の凸部に含まれている領域とを含んでおり、該溝部は、該被処理体の主面に設けられ、該被エッチング層に設けられ、該第1の凸部と該第2の凸部とによって画成されており、該溝部の内側の表面は、該被処理体の該主面に含まれており、該方法は、
第1のシーケンスをN(Nは2以上の整数)回繰り返し実行し、
前記第1のシーケンスは、
前記被処理体が収容されたプラズマ処理装置の処理容器内において、該被処理体の該主面に保護膜をコンフォーマルに形成する工程と、
前記保護膜をコンフォーマルに形成する前記工程の実行後において、前記処理容器内で発生させたガスのプラズマによって前記被処理体における前記溝部の底部をエッチングする工程と、
を備え、
前記第1のシーケンスのN回の実行においては、第1の処理を含む該第1のシーケンスをM(Mは1以上且つN−1以下の整数)回実行し、第2の処理を含む該第1のシーケンスをN−M回実行し、
前記第1の処理は、前記保護膜をコンフォーマルに形成する前記工程に含まれており、
前記第1の処理では、
前記処理容器内に第1のガスを供給する工程と、
前記第1のガスを供給する前記工程の実行後に、前記処理容器内の空間をパージする工程と、
前記空間をパージする前記工程の実行後に、前記処理容器内において第2のガスのプラズマを生成する工程と、
前記第2のガスのプラズマを生成する前記工程の実行後に、前記処理容器内の前記空間をパージする工程と、
を含む第2のシーケンスを繰り返し実行することによって、前記被処理体の前記主面に前記保護膜をコンフォーマルに形成し、
前記第2の処理は、前記保護膜をコンフォーマルに形成する前記工程に含まれており、
前記第2の処理では、
前記処理容器内に第1のガスを供給する工程と、
前記第1のガスを供給する前記工程の実行後に、前記処理容器内の前記空間をパージする工程と、
を実行することによって、前記被処理体の前記主面に前記保護膜をコンフォーマルに形成し、
前記第2の処理に引き続く前記溝部の前記底部をエッチングする前記工程では、前記処理容器内で発生させた酸素を含有するガスのプラズマによって前記被処理体における該溝部の該底部をエッチングし、
前記第1の処理において実行される前記第1のガスを供給する前記工程、および、前記第2の処理において実行される該第1のガスを供給する前記工程のいずれの工程においても、該第1のガスのプラズマを生成しない、
方法。 - 前記第2のガスは、酸素原子を含む、
請求項2または請求項4に記載の方法。 - 前記第2のガスは、二酸化炭素ガスまたは酸素ガスを含む、
請求項5に記載の方法。 - 前記第1のガスは、アミノシラン系ガスを含む、
請求項2〜6の何れか一項に記載の方法。 - 前記第1のガスは、モノアミノシランを含む、
請求項7に記載の方法。 - 前記第1のガスに含まれるアミノシラン系ガスは、1〜3個のケイ素原子を有するアミノシランを含む、
請求項7に記載の方法。 - 前記第1のガスに含まれるアミノシラン系ガスは、1〜3個のアミノ基を有するアミノシランを含む、
請求項7または請求項9に記載の方法。 - 前記溝部の前記底部をエッチングする前記工程の実行前において、前記保護膜をコンフォーマルに形成する前記工程で形成された該保護膜の膜厚は、2nm以上8nm以下である、
請求項1〜10の何れか一項に記載の方法。
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US16/194,549 US10475659B2 (en) | 2016-08-29 | 2018-11-19 | Method of processing target object |
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JP7220603B2 (ja) | 2019-03-20 | 2023-02-10 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
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US20190088496A1 (en) | 2019-03-21 |
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US20180061655A1 (en) | 2018-03-01 |
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US20200381263A1 (en) | 2020-12-03 |
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