TW202204664A - 形成包括矽及鍺層之結構之方法、裝置結構、及反應器系統 - Google Patents
形成包括矽及鍺層之結構之方法、裝置結構、及反應器系統 Download PDFInfo
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- TW202204664A TW202204664A TW110112886A TW110112886A TW202204664A TW 202204664 A TW202204664 A TW 202204664A TW 110112886 A TW110112886 A TW 110112886A TW 110112886 A TW110112886 A TW 110112886A TW 202204664 A TW202204664 A TW 202204664A
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- 238000000034 method Methods 0.000 title claims abstract description 77
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 63
- 239000010703 silicon Substances 0.000 title claims abstract description 63
- 229910052732 germanium Inorganic materials 0.000 title claims description 94
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 78
- 239000002243 precursor Substances 0.000 claims abstract description 137
- 239000004094 surface-active agent Substances 0.000 claims abstract description 40
- 230000007704 transition Effects 0.000 claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 claims description 89
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 52
- 239000007789 gas Substances 0.000 claims description 51
- -1 germanium halides Chemical class 0.000 claims description 27
- 229910052736 halogen Inorganic materials 0.000 claims description 14
- 150000002367 halogens Chemical class 0.000 claims description 13
- 239000012686 silicon precursor Substances 0.000 claims description 11
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 229910000078 germane Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 239000002070 nanowire Substances 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 3
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 claims description 3
- 239000011630 iodine Substances 0.000 claims description 3
- 229910052740 iodine Inorganic materials 0.000 claims description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 2
- 229910021617 Indium monochloride Inorganic materials 0.000 claims description 2
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 claims description 2
- KWHNXZAUGQZEDI-UHFFFAOYSA-N Cl.[Ge] Chemical compound Cl.[Ge] KWHNXZAUGQZEDI-UHFFFAOYSA-N 0.000 claims 1
- FPJOSBUYIAVREL-UHFFFAOYSA-N [Ge].Br Chemical compound [Ge].Br FPJOSBUYIAVREL-UHFFFAOYSA-N 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract description 30
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 abstract description 26
- 239000000463 material Substances 0.000 description 21
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- 238000010926 purge Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910003902 SiCl 4 Inorganic materials 0.000 description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000002178 crystalline material Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- CFTHARXEQHJSEH-UHFFFAOYSA-N silicon tetraiodide Chemical compound I[Si](I)(I)I CFTHARXEQHJSEH-UHFFFAOYSA-N 0.000 description 3
- KAXRWMOLNJZCEW-UHFFFAOYSA-N 2-amino-4-(2-aminophenyl)-4-oxobutanoic acid;sulfuric acid Chemical compound OS(O)(=O)=O.OC(=O)C(N)CC(=O)C1=CC=CC=C1N KAXRWMOLNJZCEW-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- JMMJWXHSCXIWRF-UHFFFAOYSA-N ethyl(dimethyl)indigane Chemical compound CC[In](C)C JMMJWXHSCXIWRF-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- WJFZPDZHLPHPJO-UHFFFAOYSA-N methyl-di(propan-2-yl)indigane Chemical compound CC(C)[In](C)C(C)C WJFZPDZHLPHPJO-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- OWKFQWAGPHVFRF-UHFFFAOYSA-N n-(diethylaminosilyl)-n-ethylethanamine Chemical compound CCN(CC)[SiH2]N(CC)CC OWKFQWAGPHVFRF-UHFFFAOYSA-N 0.000 description 2
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 description 2
- PZKOFHKJGUNVTM-UHFFFAOYSA-N trichloro-[dichloro(trichlorosilyl)silyl]silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)Cl PZKOFHKJGUNVTM-UHFFFAOYSA-N 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XTLYADHDMGFWPY-UHFFFAOYSA-N Cl[SiH2]Cl.Cl[SiH2]Cl Chemical compound Cl[SiH2]Cl.Cl[SiH2]Cl XTLYADHDMGFWPY-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 description 1
- 229910003691 SiBr Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- VJFOQKOUHKDIGD-UHFFFAOYSA-N [GeH3][SiH3] Chemical compound [GeH3][SiH3] VJFOQKOUHKDIGD-UHFFFAOYSA-N 0.000 description 1
- HKYTXVANCKGDGO-UHFFFAOYSA-N [H][Ge]Br Chemical compound [H][Ge]Br HKYTXVANCKGDGO-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- CODNYICXDISAEA-UHFFFAOYSA-N bromine monochloride Chemical compound BrCl CODNYICXDISAEA-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- MDRNBKMSDSTZJO-UHFFFAOYSA-N chlorosilane Chemical compound [SiH3]Cl.[SiH3]Cl MDRNBKMSDSTZJO-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- JZPXQBRKWFVPAE-UHFFFAOYSA-N cyclopentane;indium Chemical compound [In].[CH]1[CH][CH][CH][CH]1 JZPXQBRKWFVPAE-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical class Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 229910000043 hydrogen iodide Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- WMAAIGILTZEOHE-UHFFFAOYSA-N n-[bis(ethylamino)-[tris(ethylamino)silyl]silyl]ethanamine Chemical compound CCN[Si](NCC)(NCC)[Si](NCC)(NCC)NCC WMAAIGILTZEOHE-UHFFFAOYSA-N 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- VJHDVMPJLLGYBL-UHFFFAOYSA-N tetrabromogermane Chemical compound Br[Ge](Br)(Br)Br VJHDVMPJLLGYBL-UHFFFAOYSA-N 0.000 description 1
- CUDGTZJYMWAJFV-UHFFFAOYSA-N tetraiodogermane Chemical compound I[Ge](I)(I)I CUDGTZJYMWAJFV-UHFFFAOYSA-N 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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Abstract
所揭示者係用於形成包括包含矽鍺之一或多個層及包含矽之一或多個層之結構的方法及系統。例示性方法可包括使用界面活性劑、使用特定前驅物、及/或使用過渡步驟,以改善包含矽鍺及包含矽的相鄰層之間的界面。
Description
本揭露大致上係關於適於形成電子裝置結構之方法;關於用於執行此等方法之系統;及關於使用此等方法形成之結構。更具體地,本揭露係關於用於形成包括矽層及矽鍺層之結構的方法及系統。
近來,由於致力於以增加的裝置密度、以改善的性能、及/或以較低的成本形成高性能裝置,已開發三維裝置(諸如環繞式閘極(gate-all-around,GAA)或奈米線(nanowire)裝置)。
在形成環繞式閘極裝置期間,可藉由在基板表面上循序地磊晶生長矽鍺(SiGe)及矽(Si)層來形成交替之包含矽鍺的層(矽鍺層)與包含矽的層(矽層)之堆疊結構(stacked structure)或超晶格(superlattice)。可蝕刻這些層的部分以形成(例如矽)線,其等可形成環繞式閘極裝置的通道區。
對具有上覆(overlying)於矽鍺層之以磊晶(epitaxially)方式形成的矽層之許多裝置而言,可以是所想要的是在矽鍺層與以磊晶方式形成於其上的矽層之間具有相對小、急遽(abrupt)、且一致的過渡(transition)。不幸地,矽鍺層之表面上的鍺比表面上的矽在能量方面更為有利。因此,若矽鍺層的表面在後續的矽層生長之前未經鈍化(passivated),則會發生鍺分凝(segregates),導致形成不想要的大界面(interfacial/interface)層。接著,隨著矽的第一單原子層生長,鍺會再次分凝至頂部層。此機制在矽層的生長期間可能會重複,製造出數十埃(angstroms)的界面層。
因此,所想要的是形成具有矽鍺層之結構(諸如,包括上覆於矽鍺層之磊晶生長矽層之結構)的改善方法。
本節提出之任何討論(包括問題及解決方案的討論)僅為了提供本揭露背景脈絡之目的而包括在本揭露中。此類討論不應視為承認資訊之任何或全部內容在完成本揭露時已知或以其他方式構成先前技術。
本揭露之各種實施例係關於形成結構之方法、關於使用此類方法形成之結構及裝置、並關於用於執行此等方法及/或用於形成此等結構及/或裝置之設備。雖然下文更詳細地討論本揭露之各種實施例應對先前方法及結構之缺點的方式,總體而言,例示性方法包括用於形成相對薄且急遽的過渡層之技術,其允許形成具有改善之性能的裝置結構及/或具有減少之性能變異性的裝置。
根據本揭露之例示性實施例,揭示一種形成一結構之方法。例示性方法包括在一反應室內提供一基板、形成上覆於基板之一表面之包含矽及鍺的一第一層、及形成上覆於第一層之包含矽的一第二層,其中一界面活性劑前驅物係在形成第一層之步驟的至少一部分期間提供至反應室。咸認為界面活性劑貢獻一物種至第一層,其可減輕(mitigate)其他物種(例如鍺)在第一層內之遷移(migration),從而致能在第一層與第二層之間形成一急遽界面(abrupt interface)。根據本揭露之實例,界面活性劑前驅物包含鎵(gallium)、碲(tellurium)、銻(antimony)、銦(indium)、鋁(aluminum)、及/或錫(tin)中之一或多者。界面活性劑前驅物可包括一鹵素。例如,界面活性劑前驅物可以是或可包括一鹵化物(諸如一氯化物、溴化物、或碘化物)。根據一些實例,形成第一層之步驟可包括一第一週期,其包含使界面活性劑前驅物流動;(例如,界面活性劑前驅物之較低或無流動的)一第二週期;及一第三週期,其包含使一界面活性劑前驅物流動,界面活性劑前驅物可相同或可不同於在第一週期期間流動之界面活性劑前驅物。
根據本揭露之額外實施例,一種形成一結構之方法包括下列步驟:在一反應室內提供一基板、形成上覆於基板之一表面之包含矽及鍺的一第一層、及形成上覆於第一層之包含矽的一第二層,其中在形成第一層之步驟期間,提供包含一鹵素之一鍺前驅物至反應室。例如,鍺前驅物可以是或包括一鹵化鍺、或氯氫化物、或氯溴化物。根據進一步的實例,鍺前驅物可包括由GeCl4
、GeClx
H4-x
所組成之群組中的一或多者。根據進一步的實例,在形成第一層之步驟期間,二或更多個鍺前驅物係提供至反應室。形成第一層之步驟可包括一第一週期,其包含使鍺前驅物流動;一第二週期,其包含使一第二鍺前驅物流動;及一第三週期,其包含使鍺前驅物流動。第二前驅物可以是或可包括例如一鍺烷(germane)(諸如鍺烷或二鍺烷(digermane))。根據進一步的實例,在形成第一層之步驟期間,使二或更多個鍺前驅物流至反應室。
根據本揭露之額外實施例,一種形成一結構之方法包括:在一反應室內提供一基板、在反應室內形成上覆於基板之一表面之包含矽及鍺的一第一層、提供一或多個前驅物至反應室持續一過渡週期、及在過渡週期之後於反應室內形成上覆於第一層之包含矽的一第二層。根據本揭露之實例,在形成第一層之步驟期間,使一或多個前驅物之至少一者流至反應室。根據本揭露之進一步的實例,相對於一或多個前驅物之至少一者在形成第一層之步驟期間之一流量率,一或多個前驅物之至少一者在過渡週期期間之一流量率係較低的。根據進一步的實例,在過渡週期期間並未提供一鍺前驅物至反應室。
根據本揭露之進一步的例示性實施例,一種結構係使用如本文所述之方法形成。此結構可包括一基板,其具有一第一層及一第二層,第一層上覆於基板,第二層上覆於第一層。此結構可包括複數個包含矽的層及複數個包含矽鍺的層。
根據本揭露之又額外的實施例,一種裝置或其部分可使用如本文所述之方法及/或結構形成。
根據本揭露之又額外的實例,揭示一種用以執行如本文所述之方法及/或用以形成一結構、裝置、或任一者之部分的系統。
所屬技術領域中具有通常知識者將從已參照隨附圖式之某些實施例的下列詳細描述輕易明白這些及其他實施例。本揭露並未受限於任何所揭示具體實施例。
下文所提供之方法、結構、及反應器系統之例示性實施例的描述僅係例示性,且僅係意欲用於說明之目的;下列描述並非意欲限制本揭露或申請專利範圍之範疇。此外,詳述具有所述特徵之多個實施例不意欲排除具有額外特徵之其他實施例、或結合所述特徵之不同組合的其他實施例。例如,各種實施例係提出作為例示性實施例,並可列舉於附屬項中。除非另有註明,例示性實施例或其等之組件可組合或可彼此分開應用。
如下文更詳細提出,本揭露之各種實施例提供用於形成適於形成電子裝置之結構。例如,例示性方法可用以形成結構,此等結構包括一或多個包含矽的層及一或多個包含矽鍺的層,其等適於製造例如環繞式閘極(gate-all around,GAA)或奈米線(nanowire)裝置。
在本揭露中,「氣體(gas)」可包括在常溫及常壓(normal temperature and pressure,NTP)下為氣體之材料、汽化固體、及/或汽化液體,並可取決於上下文由單一氣體或氣體混合物構成。除了製程氣體以外的氣體(亦即,非藉由氣體分配總成(諸如多埠注入系統或類似者)所引入的氣體)可用於例如密封反應空間,並可包括諸如稀有氣體的密封氣體。在一些情況下,用語「前驅物(precursor)」可指參與產生另一化合物的化學反應之化合物。用語「惰性氣體(inert gas)」可指不參與化學反應及/或不會在可察覺的程度上變為膜之一部分的氣體。例示性的惰性(例如載體或吹掃)氣體包括氦氣(He)、氬氣(Ar)、氫氣(H2
)、氮氣(N2
)、及其任何組合。
如本文中所使用,用語「基板(substrate)」可指可用以形成或在其上可形成裝置、電路、或膜之任何下伏(underlying)材料。基板可包括塊材(bulk material)(諸如矽(例如單晶矽))、其他第四族(Group IV)材料(諸如鍺)、或其他半導體材料(諸如第二族到第四族(Group II-VI)或第三族到第五族(Group III-V)半導體),並可包括上覆或下伏於塊材的一或多層。進一步地,基板可包括各種特徵(諸如形成在基板之一層或表面的至少一部分之內或之上的凹部、突起部、及類似者)。
如本文中所使用,用語「磊晶層(epitaxial layer)」可指在下伏實質單晶基板或層上之實質單晶層。
如本文中所使用,用語「化學氣相沉積(chemical vapor deposition)」可指任何製程,其中基板係暴露至一或多個揮發性前驅物,其等在基板表面上起反應及/或分解,以製造想要的沉積。
如本文中所使用,用語「矽鍺(silicon germanium)」可指包含矽及鍺之半導體材料,並可表示為Si1-x
Gex
,其中1 ≥ x ≥ 0、或0.8 ≥ x ≥ 0.1、或0.6 ≥ x ≥ 0.2;或者可指包含具有如本文所提出的組成之矽及鍺的材料。
如本文中所使用,用語「膜(film)」及/或「層(layer)」可指任何連續或不連續的結構及材料(諸如,藉由本文所揭示之方法沉積之材料)。例如,膜及/或層可包括二維材料、三維材料、奈米粒子、或甚至部分或完整分子層、或部分或完整原子層、或原子及/或分子團簇(clusters)。膜或層可包含具有針孔(pinholes)的材料或層,其可以是至少部分連續的。
如本文所使用,用語「單晶(monocrystalline)」可指包括實質上單一晶體的材料,亦即,顯示長程有序化(long range ordering)的結晶材料。然而,應理解,只要單晶(monocrystalline)材料展現長程有序化,單晶材料可非完美的單一晶體,而是可包含各種缺陷(defects)、疊差(stacking faults)、原子取代、及類似者。
如本文中所使用,用語「非單晶(non-monocrystalline)」可指不包含實質上單一晶體的材料,亦即,顯示短程有序化(short range ordering)或無晶體結構有序化之任一者的材料。非單晶材料可包含多晶材料及非晶材料,此等多晶材料可顯示短程有序化,此等非晶材料可顯示實質上無晶體結構有序化。
如本文所使用,「結構(structure)」可包括如本文所述之基板。結構可包括上覆於基板之一或多個層(諸如,根據本文所述之方法形成的一或多個層)。
進一步地,在本揭露中,變數之任兩個數字可構成變數之可工作範圍,且所指示之任何範圍可包括或排除端點。額外地,所指示的變數之任何數值(不管此等數值是否以「約」來指示)可指精確值或近似值並包括等效值,且可指平均值、中間值、代表值、多數值或類似者。進一步地,在本揭露中,於一些實施例中,用語「包括(including)」、「由……構成(constituted by)」、及「具有(having)」係獨立地指「一般或廣泛地包含(typically or broadly comprising)」、「包含(comprising)」、「基本上由……組成(consisting essentially of)」、或「由……組成(consisting of)」。在本揭露中,於一些實施例中,任何已定義之意義不必然排除尋常及慣例意義。
現轉向圖式,第1圖繪示根據本揭露之例示性實施例之方法100。方法100包括下列步驟:在反應室內提供基板(步驟102)、形成上覆於基板表面之包含矽及鍺的第一層(步驟104)、及形成上覆於第一層之包含矽的第二層(步驟106)。可依想要的重複步驟104及106若干次,以形成堆疊結構,此堆疊結構包含與一或多個第二層交替的一或多個第一層。根據本揭露之實例,步驟104及106可重複約1至約2、約1至約3、約1至約4、或約1至約6、或約1至12次。
在步驟102期間,於反應室內提供基板。作為非限制性實例,步驟102期間所用之反應室可包含化學氣相沉積(例如磊晶)系統之反應室。然而,亦預期其他反應室及替代的化學氣相沉積系統亦可用以執行本揭露之實施例。反應室可以是獨立反應室或叢集工具(cluster tool)的部分。
步驟102可包括在反應室內將基板加熱至所想要的沉積溫度。在本揭露之一些實施例中,步驟102包括將基板加熱至低於約1100°C之溫度、或至低於約850°C之溫度、或至低於約700°C之溫度、或至低於約650°C之溫度、或至低於約600°C之溫度、或至低於約550°C之溫度、或至低於約500°C之溫度、或至低於約450°C之溫度、或至低於約400°C之溫度、或甚至至低於約300°C之溫度。例如,在本揭露之一些實施例中,將基板加熱至沉積溫度可包含將基板加熱至介於約400°C與約1100°C之間或約400°C與約700°C之間的溫度。
除了控制基板溫度以外,亦可調節反應室內的壓力。例如,在本揭露之一些實施例中,步驟102期間之反應室內的壓力可小於760托耳(Torr)、或小於350托耳、或小於100托耳、或小於50托耳、或小於25托耳、或小於10托耳、或甚至小於5托耳。在一些實施例中,反應室中的壓力可介於5托耳與760托耳之間、介於10托耳與200托耳之間、或介於10托耳與100托耳之間。用於步驟104及/或106的溫度及/或壓力可與步驟102的溫度及/或壓力相同或類似。
形成上覆於基板表面之包含矽及鍺之第一層的步驟104可包括使矽前驅物及鍺前驅物流至反應室。例如,矽前驅物及鍺前驅物可例如藉由一或多個氣體注入器(諸如多埠注入器(multi-port injectors,MPIs))提供至氣體分配總成,一或多個氣體注入器包括複數個個別埠注入器,以用於提供氣體混合物至反應室中。前驅物之各種組合可供應至個別埠注入器之一或多者以依所想要的微調濃度曲線。可將矽前驅物及鍺前驅物提供至反應室,使得前驅物之氣相持續提供至反應室持續一段重疊週期。例如,兩前驅物可提供至反應室持續一實質上相同的週期。
例示性矽前驅物包括矽烷及鹵化矽。在一些實施例中,例如,鹵化矽化合物可包括具有給定如下之通式的鹵化矽:Six
Wy
Hz
,其中「W」係選自由氟(Fluorine,F)、氯(Chlorine,Cl)、溴(Bromine,Br)、及碘(Iodine,I)組成之群組的鹵化物,「x」及「y」係大於零的整數,且「z」係大於或等於零的整數。在一些實施例中,鹵化矽前驅物可選自由下列組成之群組:氟化矽(例如SiF4
)、氯化矽(例如SiCl4
)、溴化矽(例如SiBr4
)、及碘化矽(例如SiI4
)。在一些實施例中,鹵化矽前驅物可包含四氯化矽(silicon fluorides)(SiCl4
)。在一些實施例中,鹵化矽前驅物可包含矽烷(諸如,例如矽烷(silane)(SiH4
)、二矽烷(disilane)(Si2
H6
)、三矽烷(trisilane)(Si3
H8
)、四矽烷(tetrasilane)(Si4
H10
)、或具有實驗通式Six
H(2x+2)
之更高級矽烷)。
舉實例而言,矽前驅物可以是或可包括下列中之一或多者:四氯化矽(silicon tetrachloride)(SiCl4
)、三氯矽烷(trichloro-silane)(SiCl3
H)、二氯矽烷(dichlorosilane)(SiCl2
H2
)、單氯矽烷(monochlorosilane)(SiClH3
)、六氯二矽烷(hexachlorodisilane,HCDS)、八氯三矽烷(octachlorotrisilane,OCTS)、碘化矽(silicon iodide)、溴化矽(silicon bromide);或胺基前驅物(amino-based precursor)(諸如六(乙胺基)二矽烷(hexakis(ethylamino)disilane,AHEAD)、及SiH[N(CH3
)2
]3
(3DMASi)、雙(二烷胺基)矽烷(bis(dialkylamino)silane)(諸如(雙(二乙胺基)矽烷)))((bis(diethylamino)silane),BDEAS);單(烷胺基)矽烷(mono(alkylamino)silane)(諸如二異丙胺基矽烷(di-isopropylaminosilane));或氧基矽烷基前驅物(oxysilanes-based precursor)(諸如四乙氧基矽烷(tetraethoxysilane)(Si(OC2
H5
)4
))。
在一些情況下,矽前驅物可包括二或更多個前驅物(諸如鹵化前驅物(例如,上文所提及之鹵化矽化合物)及矽烷前驅物)。舉具體實例而言,矽前驅物可包括二氯矽烷及矽烷。
例示性鍺前驅物包括鍺烷(諸如鍺烷(germane)(GeH4
)、二鍺烷(digermane)(Ge2
H6
)、三鍺烷(trigermane)(Ge3
H8
)、或鍺基矽烷(germylsilane)(GeH6
Si)、及鹵素化合物(諸如GeBr4
)、或其他合適的含鍺前驅物)。舉具體實例而言,鍺前驅物可包括鍺烷、及四氯化鍺(germanium tetrachloride)(GeCl4
)或、GeClx
H4-x
中之一或多者。
矽前驅物及鍺前驅物之體積流量率及流量比率可根據第一層之想要的組成而改變。舉實例而言,矽前驅物之流量率可以是約10每分鐘標準毫升數(sccm)至約700每分鐘標準毫升數、或約10每分鐘標準毫升數至約400每分鐘標準毫升數、或約10每分鐘標準毫升數至約200每分鐘標準毫升數;鍺前驅物之流量率可以是約10每分鐘標準毫升數至約990每分鐘標準毫升數、約10每分鐘標準毫升數至約220每分鐘標準毫升數、或約10每分鐘標準毫升數至約85每分鐘標準毫升數;其等之任一者的流量率可具有或不具有載體氣體。
除了矽前驅物及鍺前驅物以外,可將界面活性劑前驅物提供至反應室持續步驟104之至少一部分(例如全部或小於五十百分比)。界面活性劑可鈍化第一層之表面或促成第一層之表面的鈍化。咸認為此減少遷移至第一層表面之鍺的量,其促成在矽鍺與矽層之間形成薄的急遽界面。
例示性界面活性劑前驅物依所想要的可包括相對低能量的原子(與鍺相比),額外或替代地,其可能未作為第一層形式顯著地併入第一層中。
例如,界面活性劑前驅物可包括鎵、碲、銻、銦、鋁及錫中之一或多者,使得鎵、碲、銻、銦、鋁、及/或錫中之一或多者經併入包含矽及鍺的第一層之至少一部分中。例示性界面活性劑前驅物可包含鹵素(諸如氯、溴、或碘中之一或多者)。舉具體實例而言,界面活性劑前驅物可包括由AlCl3
、GaCl3
、SnCl4
、SbCl3
、InCl3
組成之群組中的一或多者。
在一些實施例中,界面活性劑前驅物可包含至少一金屬有機化合物。例如,具體實例可包括三甲基鎵(trimethylgallium,TMG)、或三乙基鎵(triethylgallium,TEG)、三第三丁基鎵(tritertiarybutylgallium)(TTBGa)、三氯化鎵(galliumtrichlorine)(GaCl3
)、Ga(BH4
)3
、二乙基鎵氯化物(diethylgallium chloride)(DeGaCl)、RGaCl2
、GaR3
、GaHx
,其中R可以是例如烷基、直鏈或支鏈(諸如乙基、丁基、或丙基)基團。鋁摻雜物前驅物可包含三甲基鋁(trimethylaluminum,TMA)或三乙基鋁(triethylaluminum, TEA)之至少一者。銦摻雜物前驅物可包含下列之至少一者:三甲基銦(trimethylindium,TMI)、三乙基銦(triethylindium)(TEI)、環戊二烯銦 (cyclopentadienylindium,InCp)、二異丙基甲基銦 (di-isopropylmethylindium,DIPMeIn)、或乙基二甲基銦 (ethyldimethylindium,EDMIn)。
在一些實施例中,界面活性劑前驅物可以稀釋形式提供,且稀釋形式可在載體氣體(若存在的話)中包含大約0.1%至大約100%的界面活性劑前驅物。額外或替代地,可在步驟104及106中之一或多者期間將稀釋氣體或惰性氣體(諸如氫氣)提供至反應室。在一些情況下,稀釋或惰性氣體可在步驟104、106、及步驟104、106之任何重複期間連續地流至反應室。
在步驟104的全部或一部分期間可提供界面活性劑前驅物。例如,界面活性劑前驅物可僅在接近步驟104結束(例如,最後的25%、或10%、或5%)、接近步驟104開始(例如,首先的25%、或10%、或5%)、或兩者處提供。在其他情況下,可在步驟104之實質上全部期間提供界面活性劑前驅物。在一些情況下,界面活性劑前驅物之流量率可在步驟104期間改變(例如,相對於中間,流量率可在接近步驟104開始及/或結束處較高)。在此上下文中,開始、中間、及結束係指步驟104之時間序列。舉實例而言,步驟104可包括第一週期,其包含使界面活性劑前驅物流動;第二週期;及第三週期,其包含使相同或另一界面活性劑前驅物流動。
在一些情況下,步驟104可包括(1)(在未添加界面活性劑的情況下)形成矽鍺層及(2)在添加界面活性劑的情況下形成矽鍺層。在一些情況下,步驟104可包括(1)在添加界面活性劑的情況下形成矽鍺層、(2)(在未添加界面活性劑的情況下)形成矽鍺層、及(3)在添加界面活性劑的情況下形成矽鍺層。
第一層可形成為上覆於表面之至少一部分的結晶材料(例如單晶材料)。因此,第一層的至少一部分可以是單晶,且充當用於進一步的磊晶層之模板(template)。在一些情況下,整個第一層可以是單晶。在一些情況下,第一層在一些區域中可形成為非單晶材料。
步驟104期間所形成之第一層的厚度可介於大於零或約2奈米(nm)與約10奈米之間、介於約2奈米與約20奈米之間、或介於約2奈米與約100奈米之間。
第一層可包括約70至約80原子百分比(atomic percent)、或約70至約90原子百分比、或約70至約99原子百分比的矽;及/或約1至約30原子百分比、或約5至約20原子百分比、或約15至約30原子百分比、或約20至約30原子百分比的鍺。在一些實施例中,第一層內的鍺含量可以是非恆定的,準確來說可以是變化的,使得鍺含量(及/或其他成分)可在第一層內具有漸變組成(graded composition)。
步驟104及/或步驟106可選地可包括提供蝕刻劑至反應室。例如,蝕刻劑可包括鹵素(諸如氯、溴、碘、氯化氫、溴化氫、或碘化氫)。
在步驟106期間,包含矽之第二層係(例如磊晶地)形成為上覆於基板之至少一部分上方的第一層。用於包含矽之第二層的前驅物可相同或類似於上文所述之矽前驅物。
步驟106可在與步驟104期間所用的相同反應室中執行。替代地,步驟106可在另一反應室(諸如與步驟104期間所用之反應室相同叢集工具中之另一反應室、或另一反應器系統之另一反應室)中執行。用於步驟106的溫度及/或壓力可與上文連同步驟104所述之溫度及/或壓力相同或類似。
在步驟106期間所形成之第二層的厚度可介於大於零或約2奈米與約4奈米之間、介於2奈米與約10奈米之間、介於約2奈米與約20奈米之間、或介於約2奈米與約100奈米之間。
第2圖繪示根據本揭露之例示性實施例之另一方法。方法200包括下列步驟:在反應室內提供基板(步驟202)、形成上覆於基板表面之包含矽及鍺的第一層(步驟204)、及形成上覆於第一層之包含矽的第二層(步驟206)。方法200可類似於方法100,只不過方法200可不一定包括(但可包括)在形成第一層之步驟(步驟204)的至少一部分期間,提供界面活性劑前驅物至反應室,且方法200包括提供在形成第一層之步驟(步驟204)期間,提供包含鹵素之鍺前驅物。咸認為使用包含鹵素之鍺前驅物(鍺鹵素前驅物)額外或替代地促成急遽的相對小界面層之形成。
用於步驟202至206之反應室的溫度及壓力可相同或類似於上文連同方法100之步驟102至106所提及之溫度及壓力。進一步地,矽及鍺前驅物可相同或類似於上文所提及之矽及鍺前驅物,只不過至少步驟206期間所提供之鍺前驅物包含鹵素。
包括鹵素之例示性鍺前驅物包括鹵化鍺及鹵氫化鍺(例如,氯氫化鍺、溴氫化鍺、或類似者)。例示性鹵化鍺包括氯化鍺、溴化鍺、及碘化鍺。舉實例而言,鍺前驅物可以是或可包括GeCl4
或GeClx
H4-x
。
根據這些實施例之實例,鍺前驅物可包括可在步驟204期間提供至反應室之二或更多個鍺前驅物。在這些情況下,二或更多個鍺前驅物之鍺前驅物中之至少一者包括鹵素。進一步地,二或更多個鍺前驅物至反應室之流動在時間上可重疊(或不重疊)。例如,形成第一層之步驟可包括第一週期,其包含使(例如第一)鍺前驅物流動;第二週期,其包含使第二鍺前驅物流動;及第三週期,其包含使(例如第一、第二、或第三)鍺前驅物流動。第一及第三鍺前驅物中之至少一者或兩者可包括鍺鹵素前驅物。
額外的鍺前驅物可包括本文中所提及之鍺前驅物中之任何者,包括非鹵素鍺前驅物。舉實例而言,額外的鍺前驅物可包括鍺烷(諸如鍺烷)。
當使用二或更多個鍺前驅物時,可在步驟204之全部、或一部分、或多個部分期間,提供包含鹵素之鍺前驅物。例如,鍺鹵素前驅物可僅在接近步驟204結束(例如,最後的25%、或10%、或5%)、接近步驟104開始(例如,首先的25%、或10%、或5%)、或兩者處提供。在其他情況下,可在步驟204之實質上全部期間提供鍺鹵素。在一些情況下,鍺鹵素前驅物之流量率可在步驟204期間改變(例如,相對於中間,流量率可在接近步驟204開始及/或結束處較高)。在此上下文中,開始、中間、及結束係指步驟204之時間序列。舉實例而言,步驟204可包括第一週期,其包含使鍺鹵素前驅物流動;第二週期;及第三週期,其包含使相同或另一鍺鹵素前驅物流動。
在一些情況下,步驟204可包括(1)使用鍺鹵素前驅物形成矽鍺層及(2)在使用或不使用鍺鹵素前驅物的情況下形成矽鍺層。在一些情況下,步驟204可包括(1)使用鍺鹵素前驅物形成矽鍺層、(2)在使用或不使用鍺鹵素前驅物的情況下形成矽鍺層、及(3)以相同或不同的鍺鹵素前驅物形成矽鍺層。
步驟206可相同或類似於上述之步驟106。進一步地,步驟204至206可重複所想要的次數(諸如上文連同方法100所提及之次數)。
第3圖繪示根據本揭露之實例之另一方法300。方法300包括下列步驟:在反應室內提供基板(步驟302)、在反應室內形成上覆於基板表面之包含矽及鍺的第一層(步驟304)、提供一或多個前驅物至反應室持續一過渡週期(步驟306)、及在過渡週期之後於反應室內形成上覆於第一層之包含矽的第二層(步驟308)。雖然連同方法300繪示,方法100及/或方法200可包括如本文所述之過渡步驟(步驟306)。
步驟302可相同或類似於上述之步驟102或202。步驟304可相同或類似於上述之步驟104或204。步驟308可相同或類似於上述之步驟106或206。針對這些步驟的各者之溫度、壓力、前驅物、流量率、及所得的膜厚度與組成可如上文所述。進一步地,步驟304至308可如本文所述重複若干次。
如所繪示,方法300包括額外步驟306,其提供一或多個前驅物至反應室持續一過渡週期。提供一或多個前驅物至反應室持續一過渡週期步驟306促成在矽鍺與矽層之間形成急遽及/或相對小界面。進一步地,步驟306允許製程時間縮短及對應的產出量增加,因為可顯著減少或以其他方式排除一般將用在步驟304與308之間的吹掃步驟。例如,與仰賴一般吹掃製程而非步驟306的類似方法相比,使用方法300達成產出量之300%至400%的增加。
根據本揭露之實例,在步驟304至308中之一或多者(例如全部)期間,載體氣體(諸如氫)可連續地流至反應室。在一般製程的情況下,單獨使用氫以在步驟304與308之間吹掃反應室。在步驟306期間添加前驅物顯著減少吹掃/過渡時間,並提供允許層之間的急遽薄界面之所想要的膜性質。
步驟306期間之反應室內的壓力及溫度可相同或類似於步驟304及/或308期間之溫度及壓力。
根據本揭露之實例,步驟306包括提供用以形成第一層之一或多個前驅物。換言之,在形成第一層之步驟期間,一或多個前驅物中之至少一者係流至反應室。在一些情況下,步驟306可包括在步驟304期間使提供至反應室之二或更多個前驅物流動。例如,步驟306可包括使鹵化矽前驅物及矽烷流動。步驟306可額外地包括提供蝕刻劑(諸如本文所述之蝕刻劑)至反應室。若提供,則步驟306期間所用之蝕刻劑及/或載體氣體的流量率可低於步驟304期間所用之蝕刻劑及/或載體氣體的流量率。
根據本揭露之實例,相對於一或多個前驅物中之至少一者在形成第一層的步驟期間之流量率,一或多個前驅物中之至少一者在過渡週期期間的流量率較低。根據進一步的實例,在過渡週期期間並未提供一鍺前驅物至反應室。在一些情況下,除了鍺前驅物以外,步驟304期間所提供之氣體的全部者可在步驟306期間供應至反應室。在步驟306期間提供至反應室的一或多個前驅物可包括矽前驅物(諸如本文所述之矽前驅物)。在一些情況下,載體氣體(例如氫氣)及/或蝕刻劑無論在步驟204期間是否提供至反應室,均可在步驟306期間提供至反應室。
步驟306之持續時間可根據包括膜厚度及組成之各種因素改變。根據本揭露之實例,步驟306之持續時間可小於20秒、小於15秒、或小於1秒。
第4圖繪示根據本揭露之例示性實施例形成之裝置結構(有時簡單稱為結構)400。結構400包括基板402及形成為上覆於基板402之複數個磊晶層404至418。具體地,結構400包括複數個磊晶矽鍺層404、408、412、及416,其等與複數個矽層406、410、414、及418交替。可例如使用步驟104、204、或304形成磊晶矽鍺層404、408、412、及416;可例如使用步驟106、206、或308形成磊晶矽層406、410、414、及418(在有或無過渡週期的情況下)。結構400可用在三維裝置(諸如環繞式閘極或奈米線裝置)的形成中。
第5圖繪示根據本揭露之尚有額外的例示性實施例之反應器系統(或簡單稱為系統)500。系統500可用以執行如本文所述之方法及/或形成如本文所述之結構。
在所繪示之實例中,系統500包括可選的基板搬運系統502、一或多個反應室504、氣體注入系統506、及經設置於反應室504與基板搬運系統502之間的可選的壁508。系統500亦可包括第一氣體源510、第二氣體源512、第三氣體源514、第四氣體源516、排氣源526、及控制器528。
雖然經繪示為具有四個氣體源510至516,系統500可包括任何合適數目的氣體源。例如,氣體源510至516可各自包括矽前驅物源、鍺前驅物源、蝕刻劑源、及/或載體氣體源,如上文所述者。氣體源510至516可經由管線518至524耦接至反應室504,此等管線可各自包括流量控制器、閥、加熱器、及類似者。
系統500可包括任何合適數目的反應室504及基板搬運系統502。進一步地,一或多個反應室504可以是或可包括交錯流磊晶反應室。
排氣源526可包括一或多個真空泵。
控制器528可配置以執行如本文所述的各種功能及/或步驟。例如,控制器528可配置以控制至氣體注入系統中的氣體流,以形成上覆於基板之第一層,並形成上覆於第一層之第二層,且重複此類步驟以形成結構,如上文所述者。控制器528可包括一或多個微處理器、記憶體元件、及/或開關元件,以執行各種功能。雖然繪示為單一單元,控制器528可替代地包含多個裝置。舉實例而言,控制器528可用以控制氣體流(例如,藉由監控前驅物及/或來自源510至516之其他氣體的流量率及/或控制閥、馬達、加熱器、及類似者)。進一步地,當系統500包括二或更多個反應室時,二或更多個反應室可耦接至相同/共用的控制器。
在反應器系統500之操作期間,基板(諸如半導體晶圓(未繪示))係從例如基板搬運系統502傳遞至反應室504。一旦基板經傳遞至反應室504,來自氣體源510至516之一或多個氣體(諸如前驅物、載體氣體、蝕刻劑、及/或吹掃氣體)即經由氣體注入系統506引入反應室504中。氣體注入系統506可用以在基板處理期間計量及控制一或多個氣體(例如來自一或多個氣體源510至516)的氣體流,並提供此類氣體的想要的流至反應室504內的多個位點。
上文所述之本揭露之實例實施例並未限制本揭露的範疇,因為這些實施例僅為本揭露之實施例之實例,本揭露之範疇係由隨附之申請專利範圍及其法定均等物定義。任何等效實施例係意欲屬於本揭露之範疇內。實際上,除本文所示及所述者以外,所屬技術領域中具有通常知識者可由本說明書明白本揭露之各種修改(諸如所述元件(例如步驟)之替代可用組合)。此類修改及實施例亦意欲落在隨附之申請專利範圍的範疇內。
100:方法
102:步驟
104:步驟
106:步驟
200:方法
202:步驟
204:步驟
206:步驟
300:方法
302:步驟
304:步驟
306:步驟
308:步驟
400:結構
402:基板
404:層
406:層
408:層
410:層
412:層
414:層
416:層
418:層
500:系統
502:基板搬運系統
504:反應室
506:氣體注入系統
508:壁
510:第一氣體源
512:第二氣體源
514:第三氣體源
516:第四氣體源
518:管線
520:管線
522:管線
524:管線
526:排氣源
528:控制器
當結合下列闡釋性圖式考慮時,可藉由參照實施方式及申請專利範圍而得到對本揭露之實施例的更完整瞭解。
第1圖繪示根據本揭露之例示性實施例之方法。
第2圖繪示根據本揭露之例示性實施例之另一方法。
第3圖繪示根據本揭露之例示性實施例之又另一方法。
第4圖繪示根據本揭露之例示性實施例之結構。
第5圖繪示根據本揭露之額外的例示性實施例之反應器系統。
將理解,圖式中之元件係為了簡明及清楚起見而繪示,且不一定按比例描繪。舉例而言,圖式中之元件中之一些之尺寸可相對於其他元件而言放大,以幫助改善對所繪示本揭露具體例的理解。
100:方法
102:步驟
104:步驟
106:步驟
Claims (23)
- 一種形成一結構之方法,包括下列步驟: 在一反應室內提供一基板; 形成上覆於該基板之一表面之包括矽及鍺之一第一層;以及 形成上覆於該第一層之包括矽的一第二層, 其中形成該第一層之該步驟包括在形成該第一層之該步驟的至少一部分期間,提供一界面活性劑前驅物至該反應室。
- 如請求項1之方法,其中該界面活性劑前驅物包括鎵、碲、銻、銦、錫、及鋁中之一或多者。
- 如請求項1之方法,其中該界面活性劑前驅物包括一鹵素。
- 如請求項3之方法,其中該界面活性劑前驅物包括一氯化物、溴化物、或碘。
- 如請求項1之方法,其中該界面活性劑前驅物係選自由GaCl3 、SnCl4 、SbCl3 、AlCl3 、及InCl3 所組成之群組中的一或多者。
- 如請求項1至5項任一之方法,其中該界面活性劑前驅物係僅在形成該第一層之該步驟的一部分期間提供。
- 如請求項6之方法,其中該部分之一持續時間係小於形成該第一層之該步驟之一持續時間的五十百分比。
- 如請求項1至7項中任一之方法,其中形成該第一層之該步驟包括: 一第一週期,包括使該界面活性劑前驅物流動; 一第二週期;以及 一第三週期,包括使該界面活性劑前驅物或另一界面活性劑前驅物流動。
- 一種形成一結構之方法,包括下列步驟: 在一反應室內提供一基板; 形成上覆於該基板之一表面之包括矽及鍺的一第一層;以及 形成上覆於該第一層之包括矽的一第二層, 其中在形成該第一層之該步驟期間,將包括一鹵素之一鍺前驅物提供至該反應室。
- 如請求項9之方法,其中該鍺前驅物係選自由鹵化鍺、或氯氫化鍺、或溴氫化鍺所組成之群組。
- 如請求項9之方法,其中該鍺前驅物係選自由GeCl4 或GeClx H4-x 所組成之群組中的一或多者。
- 如請求項9至11項中任一之方法,其中在形成該第一層之該步驟期間,將二或更多個鍺前驅物提供至該反應室。
- 如請求項9至12項中任一之方法,其中形成該第一層之該步驟包括: 一第一週期,包括使該鍺前驅物流動; 一第二週期,包括使一第二鍺前驅物流動;以及 一第三週期,包括使該鍺前驅物流動。
- 如請求項13之方法,其中該第二前驅物包括一鍺烷。
- 如請求項9至14項中任一之方法,其中在形成該第一層之該步驟的一部分期間,使二或更多個鍺前驅物流至該反應室。
- 一種形成一結構之方法,包括下列步驟: 在一反應室內提供一基板; 在該反應室內形成上覆於該基板之一表面之包括矽及鍺的一第一層; 提供一或多個前驅物至該反應室持續一過渡週期;以及 在該過渡週期之後,於該反應室內形成上覆於該第一層之包括矽的一第二層。
- 如請求項16之方法,其中在形成該第一層之該步驟期間,使該一或多個前驅物之至少一者流至該反應室。
- 如請求項17之方法,其中相對於在形成該第一層之該步驟期間之該一或多個前驅物之該至少一者之一流量率,在該過渡週期期間之該一或多個前驅物之該至少一者之一流量率係較低的。
- 如請求項16至18項中任一之方法,其中在該過渡週期期間,並未提供一鍺前驅物至該反應室。
- 如請求項16至19項中任一之方法,其中該一或多個前驅物包括一矽前驅物。
- 一種裝置結構,其係如請求項1至20中任一項之方法所形成。
- 如請求項21之裝置結構,其中該裝置結構包括一奈米線。
- 一種反應器系統,包括: 一或多個反應室; 一氣體注入系統,流體耦接至該一或多個反應室之至少一者; 一第一氣體源; 一第二氣體源; 一第三氣體源; 一排氣源;以及 一控制器, 其中該控制器配置以控制至該氣體注入系統中的氣體流,以如請求項1至20中任一項之方法,而選擇性形成上覆於該基板之包括矽及鍺的一層、及上覆於該包括矽及鍺的層之包括矽的層。
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US17/141,360 | 2021-01-05 | ||
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2021
- 2021-01-05 US US17/141,360 patent/US11996289B2/en active Active
- 2021-04-09 TW TW110112886A patent/TW202204664A/zh unknown
- 2021-04-12 KR KR1020210047370A patent/KR20210128924A/ko unknown
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JP2021170640A (ja) | 2021-10-28 |
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US20210327704A1 (en) | 2021-10-21 |
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