CN112053991B - 热处理基座 - Google Patents
热处理基座 Download PDFInfo
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- CN112053991B CN112053991B CN202010769707.4A CN202010769707A CN112053991B CN 112053991 B CN112053991 B CN 112053991B CN 202010769707 A CN202010769707 A CN 202010769707A CN 112053991 B CN112053991 B CN 112053991B
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- B05C13/00—Means for manipulating or holding work, e.g. for separate articles
- B05C13/02—Means for manipulating or holding work, e.g. for separate articles for particular articles
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- H—ELECTRICITY
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
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- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
Abstract
在一个实施方式中,提供用于热处理的基座。该基座包含:外轮缘,该外轮缘环绕且耦合至内盘,该外轮缘具有内边缘及外边缘。该基座进一步包含一个或更多个结构,该一个或更多个结构用于在基板受该基座支撑时减低该基板与该基座之间的接触表面面积。该一个或更多个结构的其中至少一者耦合至该内盘接近该外轮缘的该内边缘。
Description
本申请是申请日为2015年4月28日、申请号为201580023377.1、发明名称为“热处理基座”的发明专利申请的分案申请。
领域
本公开内容的实施方式一般涉及用于半导体基板的热处理的基座,且更特定地,涉及具有特征以改良处理期间跨过基板的热均匀性的基座。
背景
处理半导体基板用于广泛多样的应用,包含集成装置及微装置的制造。处理基板的一个方法包含沉积材料(例如,介电材料或导电金属)于基板的上表面上。外延是使用于长成薄、超纯层的一种沉积处理,通常为处理腔室中基板表面上的硅或锗。外延处理能够通过维持高均匀性处理条件(例如,处理腔室内的温度、压力、及流动率)而产生这样质量的层。在基板上表面附近区域中维持高均匀性的处理条件对于产生高质量层为必要的。
通常在外延处理中使用基座以支撑基板以及加热基板至一高均匀性温度。基座通常具有用于从下方绕着基板边缘支撑基板的椭圆盘或盘状上表面,而留下基板剩余下表面及基座上表面之间的小空隙。精确控制加热来源(例如,设置于基座下方的多个加热照射器)允许基座在非常严格的公差内被加热。加热的基座接着可传输热至基板(主要由基座所发射的辐射)。
尽管外延中有加热基座的精确控制,但是温度的非均匀性持续跨过基板的上表面,通常减低了沉积于基板上的层的品质。在基板边缘附近以及覆于靠近基板中央的区域观察到所不欲的温度轮廓。因此,存在针对用于半导体处理中支撑及加热基板的改良基座的需要。
概述
在一个实施方式中,提供用于热处理的基座。该基座包含:外轮缘,该外轮缘环绕且耦合至内盘,该外轮缘具有内边缘及外边缘。该基座进一步包含一个或更多个结构,该一个或更多个结构用于在基板受该基座支撑时减低该基板与该基座之间的接触表面面积,其中该一个或更多个结构的其中至少一者耦合至该内盘接近该外轮缘的该内边缘。
在另一实施方式中,提供用于热处理的基座。该基座包含:外轮缘,该外轮缘环绕且耦合至内盘,该外轮缘具有内边缘及外边缘。该基座进一步包含相对于该内盘的上表面的一个或更多个升高结构,该一个或更多个升高结构用于减低该基座与受该基座支撑的基板之间的接触表面面积,其中该一个或更多个升高结构的其中至少一者耦合至该内盘接近该外轮缘的该内边缘的一位置处。
在另一实施方式中,提供用于热处理的基座。该基座包含:外轮缘,该外轮缘环绕且耦合至内盘,该外轮缘具有内边缘及外边缘。该基座进一步包含六个楔形物,该六个楔形物在该内盘上方由该外轮缘的该内边缘径向朝内延伸,其中各楔形物由一空隙与两个其他楔形物分隔开。该基座进一步包含石英绝缘分隔器,该石英绝缘分隔器设置于所述楔形物的每一者之间。各个石英绝缘分隔器接触两个楔形物及该外轮缘的该内边缘。该基座进一步包含三个凸缘,该三个凸缘由该内盘的一上表面延伸。各凸缘所在较各楔形物更靠近该内盘的中央,其中该内盘没有对分包括所有三个凸缘。
附图简要说明
于是可以详细理解上文公开的实施方式的上述特征的方式,可通过参考以下实施方式而具有本发明的更特定描述(简短总结如上),其中一些图示于所附附图中。然而,注意所附附图仅图示典型的实施方式,因此不考虑限制其范围以排除其他等效实施方式。
图1A为根据一个实施方式的基座的俯视截面视图。
图1B为根据另一实施方式的基座的俯视截面视图。
图1C为根据另一实施方式的基座的俯视截面视图。
图1D为根据另一实施方式的基座的俯视截面视图。
图1E为根据示出于图1D中的实施方式的基座的部分横截面视图。
图2A为根据另一实施方式的基座的俯视截面视图。
图2B为根据示出于图2A中的实施方式的基座的部分横截面视图。
图2C为根据另一实施方式的基座的俯视截面视图。
图3A为根据另一实施方式的基座的俯视截面视图。
图3B为根据示出于图3A中的实施方式的基座的部分横截面视图。
图4为根据另一实施方式的基座的部分横截面视图。
图5为根据另一实施方式的基座的部分横截面视图。
为了便于理解,尽可能使用相同元件符号,以标示附图中常见的相同元件。思量公开于一个实施方式中的元件可有利地利用于其他实施方式,而无须特定叙述。
具体描述
所公开的实施方式一般涉及用于半导体基板的热处理的基座。通过减低基座及基板之间的接触表面面积,所公开的实施方式可改良处理期间跨过基板表面的热均匀性。减低基座及基板之间的接触表面面积减低了处理期间由传导从基座传输至基板的热的总量。以下描述可减低基板及基座之间的接触表面面积的一些结构的实施方式。
图1A为根据一个实施方式的基座120的俯视截面视图。基座120包含围绕且耦合至内盘102的外轮缘110。随着内盘中央较内盘102的边缘略低,内盘102可为凹面的。外轮缘110包含内边缘112及外边缘114。一般调整基座(例如,基座120)大小使得基座上欲处理基板刚好与外轮缘(例如,外轮缘110)内部相符。基座120进一步包含升降杆104以帮助基板传输进入及离开覆盖基座120的热处理腔室(未示出)。
基座120进一步包含六个楔形物122以在基板受基座120支撑时减低基板(未示出)及基座120之间的接触表面面积,其中楔形物122接触内盘102接近外轮缘110的内边缘112。可以以基座120的一整体部件来形成楔形物122,或可接合至基座(例如,通过焊接)。各楔形物122由外轮缘110的内边缘112径向朝内延伸,且各楔形物由空隙124与两个其他楔形物分隔开。空隙124对应至基板下侧不会接触基座120的面积,而允许处理期间更多热由基座120辐射至基板,同时减低基板边缘处的传导性加热。各楔形物122为相对于内盘102的上表面的升高结构。楔形物122可对称地绕着内盘102的中央排列。各楔形物122可接触外轮缘110的内边缘112,且各楔形物122可具有高于内盘102的上表面的上表面。内盘、外轮缘、以及楔形物可由碳化硅、碳化硅涂覆石墨、石墨涂覆玻璃碳、或其他具有高热导性的材料制成。
虽然图1A中示出六个楔形物122,但在不同实施方式中可使用两个或更多个楔形物。图1B示出具有以空隙144分隔开的八个楔形物142的基座140的俯视截面视图。图1C示出具有以空隙164分隔开的九个楔形物162的基座160的俯视截面视图。在一些实施方式中,通过减低基座上个别表面面积的大小(即,各楔形物的顶部表面),额外的楔形物可改良处理期间通过传导而传输热至基板的热均匀性。额外的楔形物可改良基板边缘处的热均匀性,因为有更多的基板未接触其他表面的空隙。该改良的热均匀性帮助防止热点沿着边缘形成。
基座140及160进一步包含由内盘102的上方延伸的三个圆形凸缘118。各凸缘118所在较各楔形物142、162更靠近内盘102的中央。可经由带螺纹的连接件或其他常见的扣紧构件来将凸缘118扣紧至内盘102。凸缘118可由与基座相同材料或不同材料制成,且可由碳化硅、或石墨涂覆碳化硅或玻璃碳制成。当基板绕着边缘受支撑时,例如处理期间使用基座时,基板中央可下沉于基板边缘下方。基座盘(例如内盘102)通常略为凹陷以防止处理期间下沉基板的下侧部分接触基座盘。另一方面,为了产生外延中高均匀性的处理条件,保持内盘的上表面及基板的下表面之间的距离非常小,例如,小于0.25mm。若基板接触盘,热通过传导由内盘传输至基板,且可减低热均匀性。
可使用凸缘118以支撑下沉的基板防止内盘102及基板之间的接触。凸缘118提供下沉基板及基座之间的接触表面面积,该接触表面面积较无凸缘118时可接触内盘102的基板的表面面积小。可均匀地绕着内盘102的中央分布凸缘118,如图1B及图1C中所示出。在一些实施方式中,为了确保下沉基板足够的支撑,内盘102的一侧上可永远具有至少一个凸缘118。
图1D为根据另一实施方式的基座180的俯视截面视图。基座180进一步包含六个楔形物182,以在基板受基座180支撑时减低基板(未示出)及基座180之间的接触表面面积,其中楔形物182接触内盘102接近外轮缘110的内边缘112。各楔形物182由外轮缘110的内边缘112径向朝内延伸,且各楔形物由空隙184与两个其他楔形物分隔开。空隙184较图1A中所示出的空隙124大,以进一步减低基板及基座之间的接触表面面积。基座180进一步包含设置于各楔形物182之间的绝缘分隔器188。
图1E为根据示出于图1D中的实施方式的基座180的部分横截面视图。横截面视图示出楔形物182的顶部与绝缘分隔器188的顶部处于相同高度。示出基板50置于楔形物182及绝缘分隔器188的顶部上。可设置绝缘分隔器188于槽189中,槽189绕着基座表面靠近外轮缘110的内边缘112形成,或处于绝缘分隔器188的特定径向位置处。槽189将绝缘分隔器188维持于一特定位置中。绝缘分隔器188典型地具有较槽189的深度更大的一厚度,所以绝缘分隔器188的上表面抬起于基座220的环绕表面上方,因而减低基板边缘及基座表面之间的接触。
绝缘分隔器188典型地由热性绝缘材料制成,例如氧化硅、任何种类的石英(即,非晶、结晶、光学、气泡等)、玻璃、诸如此类。绝缘分隔器188提供处理期间绕着内盘的热中断、或减低热传导性的区域。该热中断减低由基座进入基板边缘的热传导,典型地由高热传导性材料制成。基板边缘及高传导性基座材料之间减低的接触减低了处理期间基板边缘的传导性加热。绝缘分隔器188可接触外轮缘110的内边缘112,但也可设置于基座上其他位置处。例如,绝缘分隔器188可与外轮缘110的内边缘112间隔开来。
图2A为根据另一实施方式的基座220的俯视截面视图。图2B为基座220的部分横截面视图。参照图2A及图2B,基座220相似于包含环绕内盘202的外轮缘210的基座120,外轮缘210具有内边缘212及外边缘214。三个升降杆204可在内盘202上方延伸。
基座220包含环绕内盘202的中央的同心的环状脊部222。各环状脊部222具有相异的直径。至少一些环状脊部222可位于接近外轮缘210的内边缘212处。在一些实施方式中,一些环状脊部222可位于内边缘212的约1mm内处,例如,内边缘212的约0.5mm内处。基座220可进一步包含由内盘202的中央延伸至外轮缘210的内边缘212的六个轮辐228。可在不同实施方式中包含更多或更少的轮辐228。各轮辐228延伸至绕着外轮缘210的内边缘212的不同角度位置。在一些实施方式中,各轮辐228的上表面位于环状脊部222的顶部上方。在其他实施方式中,各轮辐的上表面可处于与环状脊部222的顶部实质相同高度处。在一些实施方式中,环状脊部222连续在轮辐228下方或穿过轮辐228,以形成绕着内盘202中央的完整的环。在其他实施方式中,轮辐228将环状脊部222的部分分隔开。
轮辐228及环状脊部222可在基板50受基座220支撑时减低基板50与基座220之间的接触表面面积。在一些实施方式中,基板50可在处理期间仅接触轮辐228而不接触环状脊部222。在其他实施方式中,基板50可在处理期间同时接触轮辐228及至少一些环状脊部222。在一些实施方式中,环状脊部222及轮辐228的一者或两者或他们的个别的上表面相对于内盘202的上表面为升高结构。当通过增加基座220上表面的辐射的表面面积来处理基板时,脊部222也可改良热均匀性。
轮辐228及环状脊部222可由相同材料或相异材料制成,可为基座220所制成的任何相同材料。在一个实施方式中,可通过从一未图案化基座盘表面雕塑环状脊部222来制成轮辐228及环状脊部222。在另一实施方式中,可在一未图案化基座盘表面形成凹槽以界定轮辐,且接着脊部部件的图案在所述凹槽内接合至基座表面以形成环状脊部222(例如,通过焊接)。
在一些实施方式中,基座220可包含具角度表面216,所述具角度表面216连接内盘202以及轮辐228及环状脊部222至外轮缘210的内边缘212。可使用具角度表面216如同用于基板50的支撑表面的部分。改变具角度表面216的斜率或尺寸可控制基板50相对于轮辐228及环状脊部222的高度。
图2C为根据另一实施方式的基座240的俯视截面视图。基座220相似于基座240,除了基座240不包含任何轮辐228。基座240包含相似于环状脊部222的环状脊部242。在一些实施方式中,当基板放置于基座240上时,基板的下侧可接触至少一些环状脊部242。在其他实施方式中,在基板受分隔开的表面(例如,图2B的具角度表面216)所支撑时,基板下侧及环状脊部242顶部之间可有小空隙。
图3A为根据另一实施方式的基座320的俯视截面视图。图3B为基座320的部分横截面视图。参照图3A及图3B,基座320相似于基座120包含环绕内盘302的外轮缘310,外轮缘310具有内边缘312及外边缘314。三个升降杆304可在内盘302上方延伸。
基座320包含由内盘302上表面延伸的一系列凸缘322,因此各凸缘的至少部分升高至内盘302上方。至少一些凸缘322可位于接近外轮缘310的内边缘312处。在一些实施方式中,一些凸缘322可位于内边缘312的约1mm内处,例如,内边缘312的约0.5mm内处。在内盘302上排列凸缘322成一环形图案,但可使用其他排列,例如多环形、三角形、正方形、或矩形图案、或格状图案。在一些实施方式中,内盘302的各四分之一圆周可包含至少一个凸缘322。可经由带螺纹的连接件或其他常见的扣紧构件来将凸缘322扣紧至内盘302。
凸缘322可在基板50受基座320支撑时减低基板50与基座320之间的接触表面面积。在一些实施方式中,基板50可在处理期间仅接触凸缘322而不接触内盘302或任何其他表面。当基板50使用凸缘322而受支撑时,大量减低绕着基板边缘的热点。在其他实施方式中,额外的凸缘(例如图1B及图1C中所示出的凸缘118)可由更靠近内盘302中央的内盘302位置处延伸,以防止下沉基板接触内盘302。
凸缘322典型地由低热传导性材料制成,例如氧化硅、任何种类的石英、玻璃等。凸缘提供针对设置于基座320上的基板边缘的突起接触,以减低基板边缘的传导性加热。可将凸缘322插入基座320表面中形成的凹槽。可对凸缘322及凹槽加入特征,以允许凸缘322固定于基座表面中。这样的特征可包含螺纹或其他旋转啮合结构。
图4为根据另一实施方式的基座420的部分横截面视图。基座420相似于基座120包含环绕内盘402的外轮缘410,外轮缘410具有内边缘412及外边缘414。三个升降杆(未示出)可在内盘402上方延伸。
基座420包含由内盘402上表面延伸的环状脊部422,因此环状脊部的至少部分升高至内盘402上方。环状脊部可以距离内盘402的中央一径向距离424环绕内盘402的中央,径向距离424小于基座420所支撑的基板50的半径。环状脊部422可由高热传导性材料制成,例如碳化硅或石墨涂覆碳化硅或玻璃碳。可设计环状脊部422的高度426以控制基板50与内盘402之间的空隙。在一些实施方式中,两个或更多个环状脊部422可由内盘402的上表面延伸。额外的环状脊部(未示出)可具有与其他环状脊部不同的直径以及不同的高度。在内盘402上排列环状脊部422成一环形图案,但可使用其他排列,例如多环形、三角形、正方形、或矩形图案、或格状图案。环状脊部422可位于接近外轮缘410的内边缘412处。在一些实施方式中,一些环状脊部422可位于内边缘412的约1mm内处,例如,内边缘412的约0.5mm内处。
环状脊部422可在基板50受基座420支撑时减低基板50与基座420之间的接触表面面积。在一些实施方式中,基板50可在处理期间仅接触环状脊部422而不接触内盘402或任何其他表面。处理期间可修改环状脊部422的径向位置424以及高度426以达到不同热轮廓。在其他实施方式中,凸缘(例如图1B及图1C中所示出的凸缘118)可由更靠近内盘402中央的内盘402位置处延伸,以防止下沉基板接触内盘402。
图5为根据另一实施方式的基座520的部分横截面视图。基座520相似于基座120包含环绕内盘502的外轮缘510,外轮缘510具有内边缘512及外边缘514。三个升降杆(未示出)可在内盘502上方延伸。
基座520包含由外轮缘510的内边缘512径向朝内延伸至凹陷处(depression)526的具角度表面522。至少部分的具角度表面522为相对于内盘502上表面的升高结构。凹陷处526的上表面位于内盘502上表面下方。凹陷处526的上表面耦合具角度表面522至内盘502的上表面。具角度表面522可具有自内盘502上表面起约3度及约20度之间的角度,例如约4度及约12度之间,例如约7度。可使用具角度表面522的角度及位置以控制径向位置524,径向位置524对应处理期间基板50可接触具角度表面522处。也可使用具角度表面522的角度及位置以控制基板50底部与凹陷处526的上表面之间的空隙528的大小。空隙528的大小可为0.1mm及1mm之间,例如,约0.3mm。
具角度表面522可在基板50受基座520支撑时减低基板50与基座520之间的接触表面面积。在一些实施方式中,基板50可在处理期间仅接触具角度表面522而不接触内盘502或任何其他表面。通过使用相对斜的角度(例如自内盘502的上表面起约3度及约20度之间,例如约4度及约12度之间,例如约7度),处理期间较小的基板边缘表面面积接触基座,而减低了可由基座520传输至基板50的导热的总量。处理期间可修改具角度表面522的角度及位置以达到不同热轮廓。在一些实施方式中,凸缘(例如图1B及图1C中所示出的凸缘118)可由更靠近内盘502中央的内盘502位置处延伸,以防止下沉基板接触内盘502。
描述于本文的基座实施方式允许热处理期间更一致的基板温度控制,例如外延。通过减低基板接触基座的表面面积而改良温度控制,该接触减低由基座及基板传输的导热的总量。基座及基板之间的导热传输较辐射热传输(基座及基板之间热传输的主要来源)更难控制。减低基板接触基座的表面面积允许更高比例的辐射热传输,而导致改良的温度控制及基板上改良的沉积。所公开的实施方式通过加入一结构(例如绕着内盘中央接近外轮缘的环状脊部)减低靠近基板边缘的导热传输,以减低基座与基板之间的接触表面面积。所公开的实施方式也通过包含三个凸缘以支撑基板于内盘上方,来防止若基板下沉靠近基板中央实质导热总量传输的可能性。
虽然前述实施方式使用圆的几何形状(例如,内盘、外轮缘、环状脊部等)来描述以使用于半导体“晶片”上,可调适所公开的实施方式以符合不同几何形状。
前述涉及典型的实施方式,可修改其他及进一步的实施方式而不远离其基本范围,且该范围由随附权利要求书来决定。
Claims (17)
1.一种用于热处理腔室的基座,包括:
内盘,所述内盘包含内部部分和外部凹陷,所述内部部分具有第一上表面,所述外部凹陷具有位于所述第一上表面下方的第二上表面;
外轮缘,所述外轮缘环绕且耦合至所述内盘,所述外轮缘具有内边缘及外边缘;
环状脊部,所述环状脊部从所述内盘的所述外部凹陷的所述第二上表面延伸,并在距所述内盘的中央的径向距离处环绕所述内盘的所述中央,其中所述环状脊部的高度随着距所述内盘的所述中央的距离增加而先增加后减小;以及
一系列凸缘,所述一系列凸缘从所述内盘的所述第一上表面延伸。
2.如权利要求1所述的基座,其中所述环状脊部位于所述外轮缘的所述内边缘的0.5mm内。
3.如权利要求1所述的基座,其中所述一系列凸缘包括至少三个凸缘,其中所述一系列凸缘被构造为当基板被放置到所述环状脊部上时防止下沉的所述基板接触所述内盘。
4.如权利要求3所述的基座,其中所述内盘没有对分包括所述至少三个凸缘的所有凸缘。
5.如权利要求1所述的基座,其中所述环状脊部包括碳化硅。
6.如权利要求1所述的基座,其中所述环状脊部包括石墨涂覆碳化硅。
7.一种用于热处理腔室的基座,包括:
内盘;
外轮缘,所述外轮缘环绕且耦合至所述内盘,所述外轮缘具有内边缘及外边缘;
多个同心环状脊部,所述多个同心环状脊部从所述内盘的上表面延伸并环绕所述内盘的中央,各环状脊部具有相异的直径;
两个或更多个轮辐,所述两个或更多个轮辐从所述内盘的所述中央延伸至所述外轮缘的所述内边缘,各轮辐延伸至绕着所述外轮缘的所述内边缘的相异角度位置,其中所述轮辐是相对于所述内盘的所述上表面的升高结构;以及
具角度表面,所述具角度表面将所述内盘直接连接至所述外轮缘,其中
所述内盘由从所述内盘的所述中央朝向所述外轮缘延伸的第一半径界定,
所述多个同心环状脊部的两个或更多个位于所述内盘的中央区域内,并且
所述内盘的所述中央区域由从所述内盘的所述中央延伸的第二半径界定。
8.如权利要求7所述的基座,其中各轮辐的上表面在各同心环状脊部的顶部上方延伸。
9.如权利要求7所述的基座,其中所述多个同心环状脊部包括至少十个同心环状脊部。
10.如权利要求7所述的基座,其中所述多个同心环状脊部包括至少二十五个同心环状脊部。
11.一种用于热处理腔室的基座,包括:
内盘;
外轮缘,所述外轮缘环绕且耦合至所述内盘,所述外轮缘具有内边缘及外边缘;
多个同心环状脊部,所述多个同心环状脊部从所述内盘的上表面延伸并环绕所述内盘的中央,各环状脊部具有相异的直径;
两个或更多个轮辐,所述两个或更多个轮辐从所述内盘的所述中央延伸至所述外轮缘的所述内边缘,其中每个轮辐的上表面位于每个环状脊部的顶部上方;以及
具角度表面,所述具角度表面将所述内盘直接连接至所述外轮缘,其中
所述内盘由从所述内盘的所述中央朝向所述外轮缘延伸的第一半径界定,
所述多个同心环状脊部的两个或更多个位于所述内盘的中央区域内,
所述内盘的所述中央区域由从所述内盘的所述中央延伸的第二半径界定。
12.如权利要求11所述的基座,其中所述多个同心环状脊部的最外侧的环状脊部位于所述外轮缘的所述内边缘的0.5mm内。
13.一种用于热处理腔室的基座,包括:
内盘;
外轮缘,所述外轮缘环绕且耦合至所述内盘,所述外轮缘具有内边缘及外边缘;
第一系列凸缘,所述第一系列凸缘从所述内盘的上表面延伸至位于所述内盘上方第一高度处的顶表面,其中所述内盘的各四分之一圆周包括来自所述第一系列凸缘的至少一个凸缘;以及
第二系列凸缘,其中
所述第一系列凸缘设置于相对于所述第二系列凸缘距所述内盘的中央更大的径向距离处,并且
所述第一系列凸缘被定位为在所述第一系列凸缘上支撑基板,而不使所述基板接触所述内盘。
14.如权利要求13所述的基座,其中各凸缘位于所述外轮缘的所述内边缘的0.5mm内,其中所述第一系列凸缘各自位于距所述内盘的所述中央第一径向距离处,并且所述第一系列凸缘被定位为在所述第一系列凸缘上支撑基板,而使所述基板不接触所述基座上的任何其他表面。
15.如权利要求13所述的基座,其中各凸缘的顶部在位于所述内盘内的任何其他表面的上方延伸。
16.如权利要求13所述的基座,其中各凸缘包括氧化硅、石英或玻璃。
17.如权利要求13所述的基座,其中所述第一系列凸缘是位于所述外轮缘内部的第一高度处的基座的唯一构件。
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- 2015-04-28 SG SG10201810390TA patent/SG10201810390TA/en unknown
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KR20170012359A (ko) | 2017-02-02 |
US10062598B2 (en) | 2018-08-28 |
US11848226B2 (en) | 2023-12-19 |
KR102361710B1 (ko) | 2022-02-10 |
CN112053991A (zh) | 2020-12-08 |
KR20230116078A (ko) | 2023-08-03 |
US20150340266A1 (en) | 2015-11-26 |
US20240112945A1 (en) | 2024-04-04 |
US20180366363A1 (en) | 2018-12-20 |
CN106463445A (zh) | 2017-02-22 |
TW201545258A (zh) | 2015-12-01 |
US10930543B2 (en) | 2021-02-23 |
KR20220025146A (ko) | 2022-03-03 |
CN106463445B (zh) | 2020-09-04 |
SG11201608905XA (en) | 2016-12-29 |
SG10201810390TA (en) | 2018-12-28 |
US20210175115A1 (en) | 2021-06-10 |
WO2015179081A1 (en) | 2015-11-26 |
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