CN106463445A - 热处理感受器 - Google Patents

热处理感受器 Download PDF

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CN106463445A
CN106463445A CN201580023377.1A CN201580023377A CN106463445A CN 106463445 A CN106463445 A CN 106463445A CN 201580023377 A CN201580023377 A CN 201580023377A CN 106463445 A CN106463445 A CN 106463445A
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inner disc
sensor
outer rim
substrate
flange
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CN106463445B (zh
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安哈图·恩戈
朱作明
巴拉苏布拉马尼恩·拉马钱德雷
保罗·布里尔哈特
埃德里克·唐
常安忠
建·彭·陆
卡尔蒂克·萨哈
舒伯特·S·楚
丛者澎
詹姆斯·弗朗西斯·麦克
尼伊·O·妙
凯文·约瑟夫·鲍蒂斯塔
李学斌
黄奕樵
叶祉渊
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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    • H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds

Abstract

在一个实施方式中，提供用于热处理的感受器。该感受器包含：外轮缘，该外轮缘环绕且耦合至内盘，该外轮缘具有内边缘及外边缘。该感受器进一步包含一个或更多个结构，该一个或更多个结构用于在基板受该感受器支撑时减低该基板与该感受器之间的接触表面面积。该一个或更多个结构的其中至少一者耦合至该内盘接近该外轮缘的该内边缘。

Description

热处理感受器
领域
本公开内容的实施方式一般涉及用于半导体基板的热处理的感受器，且更特定地，涉及具有特征以改良处理期间跨过基板的热均匀性的感受器。
背景
处理半导体基板用于广泛多样的应用，包含集成装置及微装置的制造。处理基板的一个方法包含沉积材料(例如，介电材料或导电金属)于基板的上表面上。外延是使用于长成薄、超纯层的一种沉积处理，通常为处理腔室中基板表面上的硅或锗。外延处理能够通过维持高均匀性处理条件(例如，处理腔室内的温度、压力、及流动率)而产生这样质量的层。在基板上表面附近区域中维持高均匀性的处理条件对于产生高质量层为必要的。
通常在外延处理中使用感受器以支撑基板以及加热基板至一高均匀性温度。感受器通常具有用于从下方绕着基板边缘支撑基板的椭圆盘或盘状上表面，而留下基板剩余下表面及感受器上表面之间的小空隙。精确控制加热来源(例如，设置于感受器下方的多个加热照射器)允许感受器在非常严格的公差内被加热。加热的感受器接着可传输热至基板(主要由感受器所发射的辐射)。
尽管外延中有加热感受器的精确控制，但是温度的非均匀性持续跨过基板的上表面，通常减低了沉积于基板上的层的品质。在基板边缘附近以及覆于靠近基板中央的区域观察到所不欲的温度轮廓。因此，存在针对用于半导体处理中支撑及加热基板的改良感受器的需要。
概述
在一个实施方式中，提供用于热处理的感受器。该感受器包含：外轮缘，该外轮缘环绕且耦合至内盘，该外轮缘具有内边缘及外边缘。该感受器进一步包含一个或更多个结构，该一个或更多个结构用于在基板受该感受器支撑时减低该基板与该感受器之间的接触表面面积，其中该一个或更多个结构的其中至少一者耦合至该内盘接近该外轮缘的该内边缘。
在另一实施方式中，提供用于热处理的感受器。该感受器包含：外轮缘，该外轮缘环绕且耦合至内盘，该外轮缘具有内边缘及外边缘。该感受器进一步包含相对于该内盘的上表面的一个或更多个升高结构，该一个或更多个升高结构用于减低该感受器与受该感受器支撑的基板之间的接触表面面积，其中该一个或更多个升高结构的其中至少一者耦合至该内盘接近该外轮缘的该内边缘的一位置处。
在另一实施方式中，提供用于热处理的感受器。该感受器包含：外轮缘，该外轮缘环绕且耦合至内盘，该外轮缘具有内边缘及外边缘。该感受器进一步包含六个楔形物，该六个楔形物在该内盘上方由该外轮缘的该内边缘径向朝内延伸，其中各楔形物由一空隙与两个其他楔形物分隔开。该感受器进一步包含石英绝缘分隔器，该石英绝缘分隔器设置于所述楔形物的每一者之间。各个石英绝缘分隔器接触两个楔形物及该外轮缘的该内边缘。该感受器进一步包含三个凸缘，该三个凸缘由该内盘的一上表面延伸。各凸缘所在较各楔形物更靠近该内盘的中央，其中该内盘没有对分包括所有三个凸缘。
附图简要说明
于是可以详细理解上文公开的实施方式的上述特征的方式，可通过参考以下实施方式而具有本发明的更特定描述(简短总结如上)，其中一些图示于所附附图中。然而，注意所附附图仅图示典型的实施方式，因此不考虑限制其范围以排除其他等效实施方式。
图1A为根据一个实施方式的感受器的俯视截面视图。
图1B为根据另一实施方式的感受器的俯视截面视图。
图1C为根据另一实施方式的感受器的俯视截面视图。
图1D为根据另一实施方式的感受器的俯视截面视图。
图1E为根据示出于图1D中的实施方式的感受器的部分横截面视图。
图2A为根据另一实施方式的感受器的俯视截面视图。
图2B为根据示出于图2A中的实施方式的感受器的部分横截面视图。
图2C为根据另一实施方式的感受器的俯视截面视图。
图3A为根据另一实施方式的感受器的俯视截面视图。
图3B为根据示出于图3A中的实施方式的感受器的部分横截面视图。
图4为根据另一实施方式的感受器的部分横截面视图。
图5为根据另一实施方式的感受器的部分横截面视图。
为了便于理解，尽可能使用相同元件符号，以标示附图中常见的相同元件。思量公开于一个实施方式中的元件可有利地利用于其他实施方式，而无须特定叙述。
具体描述
所公开的实施方式一般涉及用于半导体基板的热处理的感受器。通过减低感受器及基板之间的接触表面面积，所公开的实施方式可改良处理期间跨过基板表面的热均匀性。减低感受器及基板之间的接触表面面积减低了处理期间由传导从感受器传输至基板的热的总量。以下描述可减低基板及感受器之间的接触表面面积的一些结构的实施方式。
图1A为根据一个实施方式的感受器120的俯视截面视图。感受器120包含围绕且耦合至内盘102的外轮缘110。随着内盘中央较内盘102的边缘略低，内盘102可为凹面的。外轮缘110包含内边缘112及外边缘114。一般调整感受器(例如，感受器120)大小使得感受器上欲处理基板刚好与外轮缘(例如，外轮缘110)内部相符。感受器120进一步包含升降杆104以帮助基板传输进入及离开覆盖感受器120的热处理腔室(未示出)。
感受器120进一步包含六个楔形物122以在基板受感受器120支撑时减低基板(未示出)及感受器120之间的接触表面面积，其中楔形物122接触内盘102接近外轮缘110的内边缘112。可以以感受器120的一整体部件来形成楔形物122，或可接合至感受器(例如，通过焊接)。各楔形物122由外轮缘110的内边缘112径向朝内延伸，且各楔形物由空隙124与两个其他楔形物分隔开。空隙124对应至基板下侧不会接触感受器120的面积，而允许处理期间更多热由感受器120辐射至基板，同时减低基板边缘处的传导性加热。各楔形物122为相对于内盘102的上表面的升高结构。楔形物122可对称地绕着内盘102的中央排列。各楔形物122可接触外轮缘110的内边缘112，且各楔形物122可具有高于内盘102的上表面的上表面。内盘、外轮缘、以及楔形物可由碳化硅、碳化硅涂覆石墨、石墨涂覆玻璃碳、或其他具有高热导性的材料制成。
虽然图1A中示出六个楔形物122，但在不同实施方式中可使用两个或更多个楔形物。图1B示出具有以空隙144分隔开的八个楔形物142的感受器140的俯视截面视图。图1C示出具有以空隙164分隔开的九个楔形物162的感受器160的俯视截面视图。在一些实施方式中，通过减低感受器上个别表面面积的大小(即，各楔形物的顶部表面)，额外的楔形物可改良处理期间通过传导而传输热至基板的热均匀性。额外的楔形物可改良基板边缘处的热均匀性，因为有更多的基板未接触其他表面的空隙。该改良的热均匀性帮助防止热点沿着边缘形成。
感受器140及160进一步包含由内盘102的上方延伸的三个圆形凸缘118。各凸缘118所在较各楔形物142、162更靠近内盘102的中央。可经由带螺纹的连接件或其他常见的扣紧构件来将凸缘118扣紧至内盘102。凸缘118可由与感受器相同材料或不同材料制成，且可由碳化硅、或石墨涂覆碳化硅或玻璃碳制成。当基板绕着边缘受支撑时，例如处理期间使用感受器时，基板中央可下沉于基板边缘下方。感受器盘(例如内盘102)通常略为凹陷以防止处理期间下沉基板的下侧部分接触感受器盘。另一方面，为了产生外延中高均匀性的处理条件，保持内盘的上表面及基板的下表面之间的距离非常小，例如，小于0.25mm。若基板接触盘，热通过传导由内盘传输至基板，且可减低热均匀性。
可使用凸缘118以支撑下沉的基板防止内盘102及基板之间的接触。凸缘118提供下沉基板及感受器之间的接触表面面积，该接触表面面积较无凸缘118时可接触内盘102的基板的表面面积小。可均匀地绕着内盘102的中央分布凸缘118，如图1B及图1C中所示出。在一些实施方式中，为了确保下沉基板足够的支撑，内盘102的一侧上可永远具有至少一个凸缘118。
图1D为根据另一实施方式的感受器180的俯视截面视图。感受器180进一步包含六个楔形物182，以在基板受感受器180支撑时减低基板(未示出)及感受器180之间的接触表面面积，其中楔形物182接触内盘102接近外轮缘110的内边缘112。各楔形物182由外轮缘110的内边缘112径向朝内延伸，且各楔形物由空隙184与两个其他楔形物分隔开。空隙184较图1A中所示出的空隙124大，以进一步减低基板及感受器之间的接触表面面积。感受器180进一步包含设置于各楔形物182之间的绝缘分隔器188。
图1E为根据示出于图1D中的实施方式的感受器180的部分横截面视图。横截面视图示出楔形物182的顶部与绝缘分隔器188的顶部处于相同高度。示出基板50置于楔形物182及绝缘分隔器188的顶部上。可设置绝缘分隔器188于槽189中，槽189绕着感受器表面靠近外轮缘110的内边缘112形成，或处于绝缘分隔器188的特定径向位置处。槽189将绝缘分隔器188维持于一特定位置中。绝缘分隔器188典型地具有较槽189的深度更大的一厚度，所以绝缘分隔器188的上表面抬起于感受器220的环绕表面上方，因而减低基板边缘及感受器表面之间的接触。
绝缘分隔器188典型地由热性绝缘材料制成，例如氧化硅、任何种类的石英(即，非晶、结晶、光学、气泡等)、玻璃、诸如此类。绝缘分隔器188提供处理期间绕着内盘的热中断、或减低热传导性的区域。该热中断减低由感受器进入基板边缘的热传导，典型地由高热传导性材料制成。基板边缘及高传导性感受器材料之间减低的接触减低了处理期间基板边缘的传导性加热。绝缘分隔器188可接触外轮缘110的内边缘112，但也可设置于感受器上其他位置处。例如，绝缘分隔器188可与外轮缘110的内边缘112间隔开来。
图2A为根据另一实施方式的感受器220的俯视截面视图。图2B为感受器220的部分横截面视图。参照图2A及图2B，感受器220相似于包含环绕内盘202的外轮缘210的感受器120，外轮缘210具有内边缘212及外边缘214。三个升降杆204可在内盘202上方延伸。
感受器220包含环绕内盘202的中央的同心的环状脊部222。各环状脊部222具有相异的直径。至少一些环状脊部222可位于接近外轮缘210的内边缘212处。在一些实施方式中，一些环状脊部222可位于内边缘212的约1mm内处，例如，内边缘212的约0.5mm内处。感受器220可进一步包含由内盘202的中央延伸至外轮缘210的内边缘212的六个轮辐228。可在不同实施方式中包含更多或更少的轮辐228。各轮辐228延伸至绕着外轮缘210的内边缘212的不同角度位置。在一些实施方式中，各轮辐228的上表面位于环状脊部222的顶部上方。在其他实施方式中，各轮辐的上表面可处于与环状脊部222的顶部实质相同高度处。在一些实施方式中，环状脊部222连续在轮辐228下方或穿过轮辐228，以形成绕着内盘202中央的完整的环。在其他实施方式中，轮辐228将环状脊部222的部分分隔开。
轮辐228及环状脊部222可在基板50受感受器220支撑时减低基板50与感受器220之间的接触表面面积。在一些实施方式中，基板50可在处理期间仅接触轮辐228而不接触环状脊部222。在其他实施方式中，基板50可在处理期间同时接触轮辐228及至少一些环状脊部222。在一些实施方式中，环状脊部222及轮辐228的一者或两者或他们的个别的上表面相对于内盘202的上表面为升高结构。当通过增加感受器220上表面的辐射的表面面积来处理基板时，脊部222也可改良热均匀性。
轮辐228及环状脊部222可由相同材料或相异材料制成，可为感受器220所制成的任何相同材料。在一个实施方式中，可通过从一未图案化感受器盘表面雕塑环状脊部222来制成轮辐228及环状脊部222。在另一实施方式中，可在一未图案化感受器盘表面形成凹槽以界定轮辐，且接着脊部部件的图案在所述凹槽内接合至感受器表面以形成环状脊部222(例如，通过焊接)。
在一些实施方式中，感受器220可包含具角度表面216，所述具角度表面216连接内盘202以及轮辐228及环状脊部222至外轮缘210的内边缘212。可使用具角度表面216如同用于基板50的支撑表面的部分。改变具角度表面216的斜率或尺寸可控制基板50相对于轮辐228及环状脊部222的高度。
图2C为根据另一实施方式的感受器240的俯视截面视图。感受器220相似于感受器240，除了感受器240不包含任何轮辐228。感受器240包含相似于环状脊部222的环状脊部242。在一些实施方式中，当基板放置于感受器240上时，基板的下侧可接触至少一些环状脊部242。在其他实施方式中，在基板受分隔开的表面(例如，图2B的具角度表面216)所支撑时，基板下侧及环状脊部242顶部之间可有小空隙。
图3A为根据另一实施方式的感受器320的俯视截面视图。图3B为感受器320的部分横截面视图。参照图3A及图3B，感受器320相似于感受器120包含环绕内盘302的外轮缘310，外轮缘310具有内边缘312及外边缘314。三个升降杆304可在内盘302上方延伸。
感受器320包含由内盘302上表面延伸的一系列凸缘322，因此各凸缘的至少部分升高至内盘302上方。至少一些凸缘322可位于接近外轮缘310的内边缘312处。在一些实施方式中，一些凸缘322可位于内边缘312的约1mm内处，例如，内边缘312的约0.5mm内处。在内盘302上排列凸缘322成一环形图案，但可使用其他排列，例如多环形、三角形、正方形、或矩形图案、或格状图案。在一些实施方式中，内盘302的各四分之一圆周可包含至少一个凸缘322。可经由带螺纹的连接件或其他常见的扣紧构件来将凸缘322扣紧至内盘302。
凸缘322可在基板50受感受器320支撑时减低基板50与感受器320之间的接触表面面积。在一些实施方式中，基板50可在处理期间仅接触凸缘322而不接触内盘302或任何其他表面。当基板50使用凸缘322而受支撑时，大量减低绕着基板边缘的热点。在其他实施方式中，额外的凸缘(例如图1B及图1C中所示出的凸缘118)可由更靠近内盘302中央的内盘302位置处延伸，以防止下沉基板接触内盘302。
凸缘322典型地由低热传导性材料制成，例如氧化硅、任何种类的石英、玻璃等。凸缘提供针对设置于感受器320上的基板边缘的突起接触，以减低基板边缘的传导性加热。可将凸缘322插入感受器320表面中形成的凹槽。可对凸缘322及凹槽加入特征，以允许凸缘322固定于感受器表面中。这样的特征可包含螺纹或其他旋转啮合结构。
图4为根据另一实施方式的感受器420的部分横截面视图。感受器420相似于感受器120包含环绕内盘402的外轮缘410，外轮缘410具有内边缘412及外边缘414。三个升降杆(未示出)可在内盘402上方延伸。
感受器420包含由内盘402上表面延伸的环状脊部422，因此环状脊部的至少部分升高至内盘402上方。环状脊部可以距离内盘402的中央一径向距离424环绕内盘402的中央，径向距离424小于感受器420所支撑的基板50的半径。环状脊部422可由高热传导性材料制成，例如碳化硅或石墨涂覆碳化硅或玻璃碳。可设计环状脊部422的高度426以控制基板50与内盘402之间的空隙。在一些实施方式中，两个或更多个环状脊部422可由内盘402的上表面延伸。额外的环状脊部(未示出)可具有与其他环状脊部不同的直径以及不同的高度。在内盘402上排列环状脊部422成一环形图案，但可使用其他排列，例如多环形、三角形、正方形、或矩形图案、或格状图案。环状脊部422可位于接近外轮缘410的内边缘412处。在一些实施方式中，一些环状脊部422可位于内边缘412的约1mm内处，例如，内边缘412的约0.5mm内处。
环状脊部422可在基板50受感受器420支撑时减低基板50与感受器420之间的接触表面面积。在一些实施方式中，基板50可在处理期间仅接触环状脊部422而不接触内盘402或任何其他表面。处理期间可修改环状脊部422的径向位置424以及高度426以达到不同热轮廓。在其他实施方式中，凸缘(例如图1B及图1C中所示出的凸缘118)可由更靠近内盘402中央的内盘402位置处延伸，以防止下沉基板接触内盘402。
图5为根据另一实施方式的感受器520的部分横截面视图。感受器520相似于感受器120包含环绕内盘502的外轮缘510，外轮缘510具有内边缘512及外边缘514。三个升降杆(未示出)可在内盘502上方延伸。
感受器520包含由外轮缘510的内边缘512径向朝内延伸至凹陷处(depression)526的具角度表面522。至少部分的具角度表面522为相对于内盘502上表面的升高结构。凹陷处526的上表面位于内盘502上表面下方。凹陷处526的上表面耦合具角度表面522至内盘502的上表面。具角度表面522可具有自内盘502上表面起约3度及约20度之间的角度，例如约4度及约12度之间，例如约7度。可使用具角度表面522的角度及位置以控制径向位置524，径向位置524对应处理期间基板50可接触具角度表面522处。也可使用具角度表面522的角度及位置以控制基板50底部与凹陷处526的上表面之间的空隙528的大小。空隙528的大小可为0.1mm及1mm之间，例如，约0.3mm。
具角度表面522可在基板50受感受器520支撑时减低基板50与感受器520之间的接触表面面积。在一些实施方式中，基板50可在处理期间仅接触具角度表面522而不接触内盘502或任何其他表面。通过使用相对斜的角度(例如自内盘502的上表面起约3度及约20度之间，例如约4度及约12度之间，例如约7度)，处理期间较小的基板边缘表面面积接触感受器，而减低了可由感受器520传输至基板50的导热的总量。处理期间可修改具角度表面522的角度及位置以达到不同热轮廓。在一些实施方式中，凸缘(例如图1B及图1C中所示出的凸缘118)可由更靠近内盘502中央的内盘502位置处延伸，以防止下沉基板接触内盘502。
描述于本文的感受器实施方式允许热处理期间更一致的基板温度控制，例如外延。通过减低基板接触感受器的表面面积而改良温度控制，该接触减低由感受器及基板传输的导热的总量。感受器及基板之间的导热传输较辐射热传输(感受器及基板之间热传输的主要来源)更难控制。减低基板接触感受器的表面面积允许更高比例的辐射热传输，而导致改良的温度控制及基板上改良的沉积。所公开的实施方式通过加入一结构(例如绕着内盘中央接近外轮缘的环状脊部)减低靠近基板边缘的导热传输，以减低感受器与基板之间的接触表面面积。所公开的实施方式也通过包含三个凸缘以支撑基板于内盘上方，来防止若基板下沉靠近基板中央实质导热总量传输的可能性。
虽然前述实施方式使用圆的几何形状(例如，内盘、外轮缘、环状脊部等)来描述以使用于半导体“晶片”上，可调适所公开的实施方式以符合不同几何形状。
前述涉及典型的实施方式，可修改其他及进一步的实施方式而不远离其基本范围，且该范围由随附权利要求书来决定。

Claims (15)

1.一种用于热处理腔室的感受器，包括：
外轮缘，所述外轮缘环绕且耦合至内盘，所述外轮缘具有内边缘及外边缘；及
一个或更多个结构，所述一个或更多个结构用于在基板受所述感受器支撑时减低所述基板与所述感受器之间的接触表面面积，其中所述一个或更多个结构的其中至少一者耦合至所述内盘接近所述外轮缘的所述内边缘。
2.如权利要求1所述的感受器，其中所述一个或更多个结构的其中至少一者位于所述外轮缘的所述内边缘的0.5mm内。
3.如权利要求2所述的感受器，其中所述一个或更多个结构包括三个或更多个楔形物，其中各楔形物由所述外轮缘的所述内边缘径向朝内延伸，且各楔形物由空隙与两个其他楔形物分隔开。
4.如权利要求3所述的感受器，进一步包括绝缘分隔器，所述绝缘分隔器设置于所述楔形物的每一者之间，各个绝缘分隔器接触所述外轮缘的所述内边缘。
5.如权利要求3所述的感受器，进一步包括由所述内盘的上表面延伸的三个凸缘，各凸缘所在较各楔形物更靠近所述内盘的中央，其中所述内盘没有对分包括所有三个凸缘。
6.如权利要求2所述的感受器，其中所述一个或更多个结构包括同心的环状脊部，所述环状脊部环绕所述内盘的中央，各环状脊部具有相异的直径。
7.如权利要求6所述的感受器，进一步包括两个或更多个轮辐，所述两个或更多个轮辐由所述内盘的所述中央延伸至所述外轮缘的所述内边缘，各轮辐延伸至绕着所述外轮缘的所述内边缘的相异环状位置。
8.如权利要求2所述的感受器，其中所述一个或更多个结构包括环状脊部，所述环状脊部由所述内盘的上表面延伸，且以距离所述内盘的中央一径向距离环绕所述内盘的所述中央，所述径向距离小于所述感受器所支撑的基板的半径。
9.如权利要求2所述的感受器，其中所述一个或更多个结构包括具角度表面，所述具角度表面由所述外轮缘的所述内边缘径向朝内延伸至凹陷处，其中所述凹陷处的上表面位于所述内盘的上表面下方，且所述凹陷处的所述上表面耦合所述具角度表面至所述内盘的所述上表面，其中所述具角度表面具有相对于所述内盘的所述上表面约4度及约12度之间的角度。
10.一种用于热处理腔室的感受器，包括：
外轮缘，所述外轮缘环绕且耦合至内盘，所述外轮缘具有内边缘及外边缘；及
相对于所述内盘的上表面的一个或更多个升高结构，所述一个或更多个升高结构用于减低所述感受器与受所述感受器支撑的基板之间的一接触表面面积，其中所述一个或更多个升高结构的其中至少一者耦合至所述内盘接近所述外轮缘的所述内边缘的一位置处。
11.如权利要求10所述的感受器，其中所述一个或更多个升高结构包括六个或更多个楔形物对称地绕着所述内盘的中央排列，各楔形物接触所述外轮缘的所述内边缘且具有较所述内盘的所述上表面高的上表面。
12.如权利要求10所述的感受器，其中所述一个或更多个升高结构包括一系列凸缘，所述一系列凸缘由所述内盘的所述上表面延伸，其中所述内盘的各四分之一圆周包括至少一个凸缘。
13.如权利要求10所述的感受器，其中所述一个或更多个升高结构包括环状脊部，所述环状脊部由所述内盘的所述上表面延伸，且以距离所述内盘的中央一径向距离环绕所述内盘的所述中央，所述径向距离小于所述感受器所支撑的基板的半径。
14.如权利要求10所述的感受器，其中所述一个或更多个升高结构包括具角度表面，所述具角度表面由所述外轮缘的所述内边缘径向朝内延伸至凹陷处，其中所述凹陷处的上表面位于所述内盘的所述上表面下方，且所述凹陷处的所述上表面耦合所述具角度表面至所述内盘的所述上表面，其中所述具角度表面具有相对于所述内盘的所述上表面约4度及约20度之间的角度。
15.一种用于热处理腔室的感受器，包括：
外轮缘，所述外轮缘环绕且耦合至内盘，所述外轮缘具有内边缘及外边缘；
六个楔形物，所述六个楔形物在所述内盘上方由所述外轮缘的所述内边缘径向朝内延伸，其中各楔形物由空隙与两个其他楔形物分隔开；
石英绝缘分隔器，所述石英绝缘分隔器设置于所述楔形物的每一者之间，各个石英绝缘分隔器接触两个楔形物及所述外轮缘的所述内边缘；及
三个凸缘，所述三个凸缘由所述内盘的上表面延伸，各凸缘所在较各楔形物更靠近所述内盘的中央，其中所述内盘没有对分包括所有三个凸缘。
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