TWI651793B - 熱處理感受器 - Google Patents
熱處理感受器 Download PDFInfo
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- TWI651793B TWI651793B TW104114081A TW104114081A TWI651793B TW I651793 B TWI651793 B TW I651793B TW 104114081 A TW104114081 A TW 104114081A TW 104114081 A TW104114081 A TW 104114081A TW I651793 B TWI651793 B TW I651793B
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
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- B05C13/00—Means for manipulating or holding work, e.g. for separate articles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C13/00—Means for manipulating or holding work, e.g. for separate articles
- B05C13/02—Means for manipulating or holding work, e.g. for separate articles for particular articles
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
Abstract
在一個實施例中,提供用於熱處理的感受器。該感受器包含:一外輪緣,該外輪緣環繞且耦合至一內盤,該外輪緣具有一內邊緣及一外邊緣。該感受器進一步包含一個或更多個結構,該一個或更多個結構用於在一基板受該感受器支撐時減低該基板及該感受器之間的一接觸表面面積。該一個或更多個結構的其中至少一者耦合至該內盤接近該外輪緣的該內邊緣。
Description
本揭示案的實施例一般相關於用於半導體基板的熱處理之感受器,且更特定地,相關於具有特徵以改良處理期間跨過基板的熱一致性之感受器。
處理半導體基板用於廣泛多樣的應用,包含積體裝置及微裝置的製造。處理基板的一個方法包含沉積材料(例如,介電材料或導電金屬)於基板的上方表面上。磊晶是一個使用於長成薄、超純層的沉積處理,通常為處理腔室中基板表面上的矽或鍺。磊晶處理能夠藉由維持高一致性處理條件(例如,處理腔室內的溫度、壓力、及流動率)而產生該等品質的層。在基板上方表面附近區域中維持高一致性的處理條件對於產生高品質層為必要的。
通常在磊晶處理中使用感受器以支撐基板以及加熱基板至一高一致性溫度。感受器通常具有用於從下方繞著基板邊緣支撐基板的橢圓盤或盤狀上方表面,而留下基板剩餘下方表面及感受氣上方表面之間的小空隙。精確控制加熱來源(例如,設置於感受器下方的複數個加熱照射器)允許感受器在非常
嚴格的容忍度內被加熱。加熱的感受器接著可傳輸熱至基板(主要藉由感受器所發射的輻射)。
儘管磊晶中有加熱感受器的精確控制,溫度的非一致性持續跨過基板的上方表面,通常減低了沉積於基板上的層之品質。在基板邊緣附近以及覆於靠近基板中央的區域觀察到所不欲的溫度剖面。因此,存在針對用於半導體處理中支撐及加熱基板的改良感受器之需要。
在一個實施例中,提供用於熱處理的感受器。該感受器包含:一外輪緣,該外輪緣環繞且耦合至一內盤,該外輪緣具有一內邊緣及一外邊緣。該感受器進一步包含一個或更多個結構,該一個或更多個結構用於在一基板受該感受器支撐時減低該基板及該感受器之間的一接觸表面面積,其中該一個或更多個結構的其中至少一者耦合至該內盤接近該外輪緣的該內邊緣。
在另一實施例中,提供用於熱處理的感受器。該感受器包含:一外輪緣,該外輪緣環繞且耦合至一內盤,該外輪緣具有一內邊緣及一外邊緣。該感受器進一步包含相對於該內盤的一上方表面之一個或更多個升高結構,該一個或更多個升高結構用於減低該感受器及受該感受器支撐的一基板之間的一接觸表面面積,其中該一個或更多個升高結構的其中
至少一者耦合至該內盤接近該外輪緣的該內邊緣之一位置處。
在另一實施例中,提供用於熱處理的感受器。該感受器包含:一外輪緣,該外輪緣環繞且耦合至一內盤,該外輪緣具有一內邊緣及一外邊緣。該感受器進一步包含六個楔形物,該六個楔形物在該內盤上方由該外輪緣的該內邊緣徑向朝內延伸,其中各楔形物藉由一空隙與兩個其他楔形物分隔開。該感受器進一步包含一石英絕緣分隔器,該石英絕緣分隔器設置於該等楔形物之每一者之間。各個石英絕緣分隔器接觸兩個楔形物及該外輪緣的該內邊緣。該感受器進一步包含三個凸緣,該三個凸緣由該內盤的一上方表面延伸。各凸緣所在較各楔形物更靠近該內盤的一中央,其中該內盤沒有對分包括所有三個凸緣。
50‧‧‧基板
102‧‧‧內盤
104‧‧‧升降銷
110‧‧‧外輪緣
112‧‧‧內邊緣
114‧‧‧外邊緣
118‧‧‧凸緣
120‧‧‧感受器
122‧‧‧六個楔形物
124‧‧‧空隙
140‧‧‧感受器
142‧‧‧八個楔形物
144‧‧‧空隙
160‧‧‧感受器
162‧‧‧九個楔形物
164‧‧‧空隙
180‧‧‧感受器
182‧‧‧六個楔形物
184‧‧‧空隙
188‧‧‧絕緣分隔器
189‧‧‧溝槽
202‧‧‧內盤
204‧‧‧升降銷
210‧‧‧外輪緣
212‧‧‧內邊緣
214‧‧‧外邊緣
216‧‧‧具角度表面
220‧‧‧感受器
222‧‧‧環狀脊部
228‧‧‧輪輻
240‧‧‧感受器
242‧‧‧環狀脊部
302‧‧‧內盤
304‧‧‧升降銷
310‧‧‧外輪緣
312‧‧‧內邊緣
314‧‧‧外邊緣
320‧‧‧感受器
322‧‧‧凸緣
402‧‧‧內盤
410‧‧‧外輪緣
412‧‧‧內邊緣
414‧‧‧外邊緣
420‧‧‧感受器
422‧‧‧環狀脊部
424‧‧‧徑向距離
426‧‧‧高度
502‧‧‧內盤
510‧‧‧外輪緣
512‧‧‧內邊緣
514‧‧‧外邊緣
520‧‧‧感受器
522‧‧‧具角度表面
524‧‧‧徑向位置
526‧‧‧凹陷處
528‧‧‧空隙
於是可以詳細理解上方揭露之揭示案上述特徵的方式,可藉由參考以下實施例而具有本揭示案的更特定描述(簡短總結如上),其中一些圖示於所附圖式中。然而,注意所附圖式僅圖示典型的實施例,因此不考慮限制其範圍以排除其他等效實施例。
第1A圖為根據一個實施例之感受器之俯視截面視圖。
第1B圖為根據另一實施例之感受器之俯視截面視圖。
第1C圖為根據另一實施例之感受器之俯視截面視圖。
第1D圖為根據另一實施例之感受器之俯視截面視圖。
第1E圖為根據展示於第1D圖中之實施例之感受器之部分橫截面視圖。
第2A圖為根據另一實施例之感受器之俯視截面視圖。
第2B圖為根據展示於第2A圖中之實施例之感受器之部分橫截面視圖。
第2C圖為根據另一實施例之感受器之俯視截面視圖。
第3A圖為根據另一實施例之感受器之俯視截面視圖。
第3B圖為根據展示於第3A圖中之實施例之感受器之部分橫截面視圖。
第4圖為根據另一實施例之感受器之部分橫截面視圖。
第5圖為根據另一實施例之感受器之部分橫截面視圖。
為了便於理解,盡可能使用相同元件符號,以標示圖式中常見的相同元件。思量揭露於一個實施例中的元件可有利地利用於其他實施例,而無須特定敘述。
所揭露實施例一般相關於用於半導體基板的熱處理之感受器。藉由減低感受器及基板之間的接觸表面面積,所揭露實施例可改良處理期間跨過基板表面的熱一致性。減低感受器及基板之間的接觸表面面積減低了處理期間藉由傳導從感受器傳輸至基板的熱的總量。以下描述可減低基板及感受器之間的接觸表面面積的一些結構的實施例。
第1A圖為根據一個實施例之感受器120之俯視截面視圖。感受器120包含圍繞且耦合至內盤102的外輪緣110。隨著內盤中央較內盤102的邊緣略低,內盤102可為凹面的。外輪緣110包含內邊緣112及外邊緣114。一般調整感受器(例如,感受器120)大小使得感受器上欲處理基板剛好與外輪緣(例如,外輪緣110)內部相符。感受器120進一步包含升降銷104以幫助基板傳輸進入及離開覆蓋感受器120的熱處理腔室(未展示)。
感受器120進一步包含六個楔形物122以在基板受感受器120支撐時減低基板(未展示)及感受器120之間的接觸表面面積,其中楔形物122接觸內盤102接近外輪緣110的內邊緣112。可以感受器120的一整體部件來形成楔形物122,或可接合至感受器(例如,藉由焊接)。各楔形物122由外輪緣110的內邊緣112徑向朝內延伸,且各楔形物藉由空
隙124與兩個其他楔形物分隔開。空隙124對應至基板下側不會接觸感受器120的面積,而允許處理期間更多熱由感受器120輻射至基板,同時減低基板邊緣處的傳導性加熱。各楔形物122為相對於內盤102的上方表面的升高結構。楔形物122可對稱地繞著內盤102的中央排列。各楔形物122可接觸外輪緣110的內邊緣112,且各楔形物122可具有高於內盤102的上方表面的上方表面。內盤、外輪緣、以及楔形物可由碳化矽、碳化矽塗覆石墨、石墨塗覆玻璃碳、或其他具有高熱導性的材料製成。
雖然第1A圖中展示六個楔形物122,在不同實施例中可使用兩個或更多個楔形物。第1B圖展示具有以空隙144分隔開的八個楔形物142的感受器140之俯視截面視圖。第1C圖展示具有以空隙164分隔開的九個楔形物162的感受器160之俯視截面視圖。在一些實施例中,藉由減低感受器上個別表面面積的大小(亦即,各楔形物的頂部表面),額外的楔形物可改良處理期間藉由傳導而傳輸熱至基板的熱一致性。額外的楔形物可改良基板邊緣處的熱一致性,因為有更多的基板未接觸其他表面的空隙。該改良的熱一致性幫助防止熱點沿著邊緣形成。
感受器140及160進一步包含由內盤102的上方延伸的三個圓形凸緣118。各凸緣118所在較各楔形物142、162更靠近內盤102的中央。可
經由帶螺紋的連接或其他常見的扣緊構件來將凸緣118扣緊至內盤102。凸緣118可由與感受器相同材料或不同材料製成,且可由碳化矽、或石墨塗覆碳化矽或玻璃碳製成。當基板繞著邊緣受支撐時,例如處理期間使用感受器時,基板中央可下沉於基板邊緣下方。感受器盤(例如內盤102)通常略為凹陷以防止處理期間下沉基板的下側部分接觸感受器盤。另一方面,為了產生磊晶中高一致性的處理條件,保持內盤的上方表面及基板的下方表面之間的距離非常小,例如,小於0.25mm。若基板接觸盤,熱藉由傳導由內盤傳輸至基板,且可減低熱一致性。
可使用凸緣118以支撐下沉的基板防止內盤102及基板之間的接觸。凸緣118提供下沉基板及感受器之間的接觸表面面積,該接觸表面面積較基板表面面積較無凸緣118時可接觸內盤102之基板的表面面積小。可均勻地繞著內盤102的中央分佈凸緣118,如第1B及1C圖中所展示。在一些實施例中,為了確保下沉基板足夠的支撐,內盤102的一側上可永遠具有至少一個凸緣118。
第1D圖為根據另一實施例之感受器180之俯視截面視圖。感受器180進一步包含六個楔形物182,以在基板受感受器180支撐時減低基板(未展示)及感受器180之間的接觸表面面積,其中楔形物182接觸內盤102接近外輪緣110的內邊緣
112。各楔形物182由外輪緣110的內邊緣112徑向朝內延伸,且各楔形物藉由空隙184與兩個其他楔形物分隔開。空隙184較第1A圖中所展示的空隙124大,以進一步減低基板及感受器之間的接觸表面面積。感受器180進一步包含設置於各楔形物182之間的絕緣分隔器188。
第1E圖為根據展示於第1D圖中之實施例之感受器180之部分橫截面視圖。橫截面視圖展示楔形物182的頂部與絕緣分隔器188的頂部處於相同高度。展示基板50置於楔形物182及絕緣分隔器188的頂部上。可設置絕緣分隔器188於溝槽189中,溝槽189繞著感受器表面靠近外輪緣110的內邊緣112形成,或處於絕緣分隔器188之特定徑向位置處。溝槽189將絕緣分隔器188維持於一特定位置中。絕緣分隔器188典型地具有較溝槽189的深度更大的一厚度,所以絕緣分隔器188的上方表面抬起於感受器220的環繞表面上方,因而減低基板邊緣及感受器表面之間的接觸。
絕緣分隔器188典型地由熱性絕緣材料製成,例如氧化矽、任何種類的石英(亦即,非晶形、晶形、光性雙晶、氣泡等)、玻璃、諸如此類。絕緣分隔器188提供處理期間繞著內盤的熱中斷、或減低熱傳導性的區域。該熱中斷減低由感受器進入基板邊緣的熱傳導,典型地由高熱傳導性材料製成。基板邊
緣及高傳導性感受器材料之間減低的接觸減低了處理期間基板邊緣的傳導性加熱。絕緣分隔器188可接觸外輪緣110的內邊緣112,但也可設置於感受器上其他位置處。例如,絕緣分隔器188可與外輪緣110的內邊緣112間隔開來。
第2A圖為根據另一實施例之感受器220之俯視截面視圖。第2B圖為感受器220之部分橫截面視圖。參照第2A及2B圖,感受器220相似於感受器120包含環繞內盤202的外輪緣210,外輪緣210具有內邊緣212及外邊緣214。三個升降銷204可在內盤202上方延伸。
感受器220包含環繞內盤202中央之同心的環狀脊部222。各環狀脊部222具有相異的直徑。至少一些環狀脊部222可位於接近外輪緣210的內邊緣212處。在一些實施例中,一些環狀脊部222可位於內邊緣212的約1mm內處,例如,內邊緣212的約0.5mm內處。感受器220可進一步包含由內盤202的中央延伸至外輪緣210的內邊緣212的六個輪輻228。可在不同實施例中包含更多或更少的輪輻228。各輪輻228延伸至繞著外輪緣210的內邊緣212的不同角度位置。在一些實施例中,各輪輻228的上方表面位於環狀脊部222的頂部上方。在其他實施例中,各輪輻228的上方表面可處於與環狀脊部222的頂部實質相同高度處。在一些實施例中,環狀
脊部222連續在輪輻228下方或穿過輪輻228,以形成繞著內盤202中央的完整的環。在其他實施例中,輪輻228將環狀脊部222的部分分隔開。
輪輻228及環狀脊部222可在基板50受感受器220支撐時減低基板50及感受器220之間的接觸表面面積。在一些實施例中,基板50可在處理期間僅接觸輪輻228而不接觸環狀脊部222。在其他實施例中,基板50可在處理期間同時接觸輪輻228及至少一些環狀脊部222。在一些實施例中,環狀脊部222及輪輻228之一者或兩者或其個別的上方表面相對於內盤202的上方表面為升高結構。當藉由增加感受器220上方表面之輻射的表面面積來處理基板時,脊部222也可改良熱一致性。
輪輻228及環狀脊部222可由相同材料或相異材料製成,可為感受器220所製成之任何相同材料。在一個實施例中,可藉由從一未圖案化感受器盤表面雕塑環狀脊部222來製成輪輻228及環狀脊部222。在另一實施例中,可在一未圖案化感受器盤表面形成凹口以界定輪輻,且接著脊部部件的圖案在該等凹口內接合至感受器表面以形成環狀脊部222(例如,藉由焊接)。
在一些實施例中,感受器220可包含具角度表面216連接內盤202以及輪輻228及環狀脊部222至外輪緣210的內邊緣212。可使用具角度表
面216如同用於基板50的支撐表面的部分。改變具角度表面216的斜率或尺寸可控制基板50相對於輪輻228及環狀脊部222的高度。
第2C圖為根據另一實施例之感受器240之俯視截面視圖。感受器220相似於感受器240,除了感受器240不包含任何輪輻228。感受器240包含相似於環狀脊部222的環狀脊部242。在一些實施例中,當基板放置於感受器240上時,基板的下側可接觸至少一些環狀脊部242。在其他實施例中,在基板受分隔開的表面(例如,第2B圖的具角度表面216)所支撐時,基板下側及環狀脊部242頂部之間可有小空隙。
第3A圖為根據另一實施例之感受器320之俯視截面視圖。第3B圖為感受器320之部分橫截面視圖。參照第3A及3B圖,感受器320相似於感受器120包含環繞內盤302的外輪緣310,外輪緣310具有內邊緣312及外邊緣314。三個升降銷304可在內盤302上方延伸。
感受器320包含由內盤302上方表面延伸的一系列凸緣322,因此各凸緣之至少部分升高至內盤302上方。至少一些凸緣322可位於接近外輪緣310的內邊緣312處。在一些實施例中,一些凸緣322可位於內邊緣312的約1mm內處,例如,內邊緣312的約0.5mm內處。在內盤302上排列凸緣
322成一環形圖案,但可使用其他排列,例如多環形、三角形、正方形、或矩形圖案、或格狀圖案。在一些實施例中,內盤302的各四分之一圓周可包含至少一個凸緣322。可經由帶螺紋的連接或其他常見的扣緊構件來將凸緣322扣緊至內盤302。
凸緣322可在基板50受感受器320支撐時減低基板50及感受器320之間的接觸表面面積。在一些實施例中,基板50可在處理期間僅接觸凸緣322而不接觸內盤302或任何其他表面。當基板50使用凸緣322而受支撐時,大量減低繞著基板邊緣的熱點。在其他實施例中,額外的凸緣(例如第1B及1C圖中所展示的凸緣118)可由更靠近內盤302中央的內盤302位置處延伸,以防止下沉基板接觸內盤302。
凸緣322典型地由低熱傳導性材料製成,例如氧化矽、任何種類的石英、玻璃等。凸緣提供針對設置於感受器320上的基板邊緣的突起接觸,以減低基板邊緣的傳導性加熱。可將凸緣322插入感受器320表面中形成的凹口。可對凸緣322及凹口加入特徵,以允許凸緣322固定於感受器表面中。該等特徵可包含螺紋或其他旋轉咬合結構。
第4圖為根據另一實施例之感受器420之部分橫截面視圖。感受器420相似於感受器120包含環繞內盤402的外輪緣410,外輪緣410具有內邊
緣412及外邊緣414。三個升降銷(未展示)可在內盤402上方延伸。
感受器420包含由內盤402上方表面延伸的一環狀脊部422,因此環狀脊部之至少部分升高至內盤402上方。環狀脊部可以距離內盤402的中央一徑向距離424環繞內盤402的中央,徑向距離424小於感受器420所支撐之基板50的半徑。環狀脊部422可由高熱傳導性材料製成,例如碳化矽或石墨塗覆碳化矽或玻璃碳。可設計環狀脊部422的高度426以控制基板50及內盤402之間的空隙。在一些實施例中,兩個或更多個環狀脊部422可由內盤402上方表面延伸。額外的環狀脊部(未展示)可具有與其他環狀脊部不同的直徑以及不同的高度。在內盤402上排列環狀脊部422成一環形圖案,但可使用其他排列,例如多環形、三角形、正方形、或矩形圖案、或格狀圖案。環狀脊部422可位於接近外輪緣410的內邊緣412處。在一些實施例中,一些環狀脊部422可位於內邊緣412的約1mm內處,例如,內邊緣412的約0.5mm內處。
環狀脊部422可在基板50受感受器420支撐時減低基板50及感受器420之間的接觸表面面積。在一些實施例中,基板50可在處理期間僅接觸環狀脊部422而不接觸內盤402或任何其他表面。處理期間可修改環狀脊部422的徑向距離424以
及高度426以達到不同熱剖面。在其他實施例中,凸緣(例如第1B及1C圖中所展示的凸緣118)可由更靠近內盤402中央的內盤402位置處延伸,以防止下沉基板接觸內盤402。
第5圖為根據另一實施例之感受器520之部分橫截面視圖。感受器520相似於感受器120包含環繞內盤502的外輪緣510,外輪緣510具有內邊緣512及外邊緣514。三個升降銷(未展示)可在內盤502上方延伸。
感受器520包含由外輪緣510的內邊緣512徑向朝內延伸至凹陷處526的具角度表面522。至少部分的具角度表面522為相對於內盤502上方表面的升高結構。凹陷處526的上方表面位於內盤502上方表面下方。凹陷處526的上方表面耦合具角度表面522至內盤502上方表面。具角度表面522可具有自內盤502上方表面起約3度及約20度之間的角度,例如約4度及約12度之間,例如約7度。可使用具角度表面522的角度及位置以控制徑向位置524,徑向位置524對應處理期間基板50可接觸具角度表面522處。也可使用具角度表面522的角度及位置以控制基板50底部及凹陷處的526上方表面之間的空隙528的大小。空隙528的大小可為0.1mm及1mm之間,例如,約0.3mm。
具角度表面522可在基板50受感受器520支撐時減低基板50及感受器520之間的接觸表面面積。在一些實施例中,基板50可在處理期間僅接觸具角度表面522而不接觸內盤502或任何其他表面。藉由使用相對斜的角度(例如自內盤502的上方表面起約3度及約20度之間,例如約4度及約12度之間,例如約7度),處理期間較小的基板邊緣表面面積接觸感受器,而減低了可由感受器520傳輸至基板50的導熱的總量。處理期間可修改具角度表面522的角度及位置以達到不同熱剖面。在一些實施例中,凸緣(例如第1B及1C圖中所展示的凸緣118)可由更靠近內盤502中央的內盤502位置處延伸,以防止下沉基板接觸內盤502。
描述於此的感受器實施例允許熱處理期間更一致的基板溫度控制,例如磊晶。藉由減低基板接觸感受器的表面面積而改良溫度控制,該接觸減低由感受器及基板傳輸的導熱的總量。感受器及基板之間的導熱傳輸較輻射熱傳輸(感受器及基板之間熱傳輸的主要來源)更難控制。減低基板接觸感受器的表面面積允許更高比例的輻射熱傳輸,而導致改良的溫度控制及基板上改良的沉積。所揭露實施例藉由加入一結構(例如繞著內盤中央接近外輪緣的環狀脊部)減低靠近基板邊緣的導熱傳輸,以減低感受器及基板之間的接觸表面面積。所揭露實施例也藉由包含三個
凸緣以支撐基板於內盤上方,來防止若基板下沉靠近基板中央實質導熱總量傳輸的可能性。
雖然前述實施例使用圓的幾何形狀(例如,內盤、外輪緣、環狀脊部等)來描述以使用於半導體「晶圓」上,可調適所揭露實施例以符合不同幾何形狀。
前述係典型之實施例,可修改其他及進一步的實施例而不遠離其基本範圍,且該範圍由隨後的申請專利範圍來決定。
Claims (10)
- 一種用於一熱處理腔室的感受器,包括:一內盤,該內盤延伸穿過該感受器的一中央;一外輪緣,該外輪緣環繞該感受器的該中央且耦合至該內盤,該外輪緣具有一內邊緣及一外邊緣;一個或更多個結構,該一個或更多個結構用於在一基板受該感受器支撐時減低該基板及該感受器之間的一接觸表面面積,其中該一個或更多個結構的其中至少一者耦合至該內盤接近該外輪緣的該內邊緣且該外輪緣相對於該一個或更多個結構升高,及該一個或更多個結構包括三個或更多個楔形物,其中各楔形物由該外輪緣的該內邊緣徑向朝內延伸,且各楔形物藉由一空隙與兩個其他楔形物分隔開;以及一絕緣分隔器,該絕緣分隔器設置於該等楔形物之每一者之間,各個絕緣分隔器接觸該外輪緣的該內邊緣。
- 如請求項1所述之感受器,其中該一個或更多個結構的其中至少一者位於該外輪緣的該內邊緣之0.5mm內。
- 如請求項1所述之感受器,其中該三個 或更多個楔形物包括六個楔形物。
- 如請求項1所述之感受器,其中該三個或更多個楔形物包括八個楔形物。
- 如請求項1所述之感受器,其中該三個或更多個楔形物包括九個楔形物。
- 如請求項1所述之感受器,其中該絕緣分隔器為石英。
- 如請求項1所述之感受器,進一步包括由該內盤的一上方表面延伸的三個凸緣,各凸緣所在較各楔形物更靠近該內盤的一中央,其中該內盤的對分沒有包括所有三個凸緣。
- 一種用於一熱處理腔室的感受器,包括:一內盤,該內盤延伸穿過該感受器的一中央;一外輪緣,該外輪緣環繞該感受器的該中央且耦合至該內盤,該外輪緣具有一內邊緣及一外邊緣;相對於該內盤的一上方表面之一個或更多個升高結構,該一個或更多個升高結構用於減低該感受器及受該感受器支撐的一基板之間的一接觸表 面面積,其中該一個或更多個升高結構的其中至少一者耦合至該內盤接近該外輪緣的該內邊緣之一位置處且該外輪緣相對於該一個或更多個升高結構升高,及該一個或更多個升高結構包括三個或更多個楔形物,其中各楔形物由該外輪緣的該內邊緣徑向朝內延伸,且各楔形物藉由一空隙與兩個其他楔形物分隔開;以及一絕緣分隔器,該絕緣分隔器設置於該等楔形物之每一者之間,各個絕緣分隔器接觸該外輪緣的該內邊緣。
- 如請求項8所述之感受器,其中該三個或更多個楔形物包括六個或更多個楔形物對稱地繞著該內盤的一中央排列,各楔形物接觸該外輪緣的該內邊緣且具有較該內盤的該上方表面高的一上方表面。
- 一種用於一熱處理腔室的感受器,包括:一外輪緣,該外輪緣環繞且耦合至一內盤,該外輪緣具有一內邊緣及一外邊緣;六個楔形物,該六個楔形物在該內盤上方由該外輪緣的該內邊緣徑向朝內延伸,其中各楔形物 藉由一空隙與兩個其他楔形物分隔開;一石英絕緣分隔器,該石英絕緣分隔器設置於該等楔形物之每一者之間,各個石英絕緣分隔器接觸兩個楔形物及該外輪緣的該內邊緣;及三個凸緣,該三個凸緣由該內盤的一上方表面延伸,各凸緣所在較各楔形物更靠近該內盤的一中央,其中該內盤的對分沒有包括所有三個凸緣。
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2018
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2021
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Publication number | Publication date |
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CN112053991B (zh) | 2022-04-15 |
CN106463445B (zh) | 2020-09-04 |
US20180366363A1 (en) | 2018-12-20 |
US11848226B2 (en) | 2023-12-19 |
WO2015179081A1 (en) | 2015-11-26 |
TW201545258A (zh) | 2015-12-01 |
US20210175115A1 (en) | 2021-06-10 |
US20240112945A1 (en) | 2024-04-04 |
CN106463445A (zh) | 2017-02-22 |
KR102361710B1 (ko) | 2022-02-10 |
SG11201608905XA (en) | 2016-12-29 |
US20150340266A1 (en) | 2015-11-26 |
KR20220025146A (ko) | 2022-03-03 |
KR20170012359A (ko) | 2017-02-02 |
SG10201810390TA (en) | 2018-12-28 |
KR20230116078A (ko) | 2023-08-03 |
US10930543B2 (en) | 2021-02-23 |
CN112053991A (zh) | 2020-12-08 |
US10062598B2 (en) | 2018-08-28 |
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