TW201213758A - Substrate processing apparatus and substrate cooling method - Google Patents

Substrate processing apparatus and substrate cooling method Download PDF

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Publication number
TW201213758A
TW201213758A TW100123207A TW100123207A TW201213758A TW 201213758 A TW201213758 A TW 201213758A TW 100123207 A TW100123207 A TW 100123207A TW 100123207 A TW100123207 A TW 100123207A TW 201213758 A TW201213758 A TW 201213758A
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substrate
pressure
space
platform
chamber
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TW100123207A
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Chinese (zh)
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TWI429873B (en
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Yoshinori Fujii
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Ulvac Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A substrate processing apparatus includes: a chamber; a stage which has a face on which a groove portion is provided, which is disposed in the chamber, on which a substrate is mounted so as to form micro gap portions on the face, the stage cooling the substrate by heat exchanging while being in contact with the substrate; a gas supply section supplying a predetermined gas to a first space, the first space being positioned above a first face of the substrate mounted on the stage, the first space serving as an inside space of the chamber; and a control section controlling a first pressure of the first space and a second pressure of a second space so that the first pressure of the first space is greater than the second pressure of the second space, the second space being positioned below the substrate, the second space including the gap portions provided between the stage and a second face of the substrate, the second space including the groove portion.

Description

201213758 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種包含將基板搬入或將基板搬出之載入 鎖定室之基板處理裝置及基板冷卻方法。更詳細而言，本 發明係關於一種能夠於載入鎖定室内，使帶有熱量之基板 適當地冷部之後，將基板向載入鎖定室外取出的基板處理 裝置及基板冷卻方法。 【先前技術】 半導體製造裝置通常具有在減壓下或真空下處理半導體 基板之複數個處理室。將半導體基板根據預先決定之製造 步驟，連續導入至進行製造步驟之複數個處理室。於各處 理室中’對基板進行特定之處理。 又，根據製造步驟，於特定之處理開始前及結束後，處 理至之内部通常保持為真空。因此，於將半導體基板搬入 至處理室或自處理室搬出之情形時，需要載入鎖定室。於 該載入鎖定室中，為使其内部壓力成為真空而減壓，或恢 復至大氣壓。 作為此種半導體製造裝置，近年來，多用有多腔室方式 之半導體製造裝置。多腔室方式之半導體製造裝置具有如 下構造：於内部配置有基板搬送機器人之核心室（搬送室） 之周圍，配置有收容被處理基板之單個或複數個載入鎖定 室、與對被處理基板進行成膜、蝕刻等特定之真空處理之 複數個處理室。而且’於載入鎖定室與處理室之間搬送基 板之步驟、及於-處理室與另一處理室之間搬送基板之步 157314.doc 201213758 驟係藉由使用配置於核心室内之基板搬送機器人而進行 (例如，參照日本專利特開2009-206270號公報）。 此處，將半導體基板自載入鎖定室搬送至處理室之通常 之搬送步驟如以下所述。於大氣環境中將半導體基板導入 至載入鎖定室内，其後，將載入鎖定室之内部減壓，變為 真空環境。繼而，藉由設置於鄰接於載入鎖定室之核心室 中之基板搬送機器人，將半導體基板自載入鎖定室經由核 心室向處理室搬送。其後，於製程腔室内，對半導體基板 實施處理操作（例如蝕刻、氧化、化學氣相蒸鍍等）。 將處理後之半導體基板與將半導體基板搬送至處理室時 相同，藉由基板搬送機器人自處理室經由核心室向載入鎖 定室返回。載入鎖定室之内部，於將基板自上述載入鎖定 室搬送至處理室以後’一直保持為真空。於半導體基板返 回至載入鎖定室之後，將氮氣（N2)等淨化氣體供給至載入 鎖定室内，使載入鎖定室之壓力恢復為大氣壓（大氣排 放）。於載入鎖定室之壓力達到大氣壓之後，將經處理之 半導體基板移至基板匣’進行下一個處理步驟。 然而，於此種多腔室方式之半導體製造裝置中，於實施 使基板成膜等處理之情形時，於高溫下實施處理。將實施 有處理之基板例如於維持50〇t左右之高溫之狀態下自處 理室取出，搬送至載入鎖定室。然而，於此種高溫狀態下 若將基板暴露於大氣中則使基板氧化。又，若將高溫狀態 之基板收納至收納容器中，則通常產生使樹脂製之收納容 器熔化等不良情況。 157314.doc 201213758 為避免此種不良情況，於使載入鎖定室内之壓力自真空 恢復至大氣壓之期間進行冷卻基板。例如，於載入鎖定室 内所配置之平台上載置基板，於平台與基板之間進行熱交 換，藉此冷卻基板》 然而，先前，於進行基板之冷卻與大氣排放之載入鎖定 室中，有不能充分獲得冷卻速度之情形，且有配置於大氣 環境中之搬送機器人產生搬送錯誤，裝置停止之問題。 又，作為使基板充分冷卻之對策，於在載入鎖定室中延長 基板待機之時間之情形時，有導致處理量降低之問題。 進而，若於基板冷卻中在基板面内產生冷卻溫度之分佈 差，則基板翹曲，基板之一部分離開平台，故有基板之冷 卻時間變得非常慢之問題。Λ，有因翹曲之衝擊使基板破 裂之問題。 【發明内容】 本發明係考慮此種情形而開發者，故將提供於基板之冷 卻時，能夠使基板面内之溫度無偏差、均勻且迅速地冷卻 基板之基板處理裝置作為第一目的。 又，本發明係將提供於在基板處理裝置中冷卻基板時， 能夠使基板面内之溫度無偏差、均勻且迅速地冷卻基板之 基板冷卻方法作為第二目的。 本發明之第1形態之基板處理裝置包含：腔室；平台， 其具有設有槽部之面，且配置於上述腔室内，以於上述面 上形成微小之間隙部之方式載置基板，藉由與上述基板接 觸並進打熱交換而冷卻上述基板；氣體供給部，其位於較 157314.doc 201213758 上述平台上所載置之上述基板之第丨面更上側，並且向上 述腔室内之空間即第^間導人特；t之氣體；及控制部， 其以使上述第一空間之第一壓力比第二空間之第二壓力大 之方式而控制上述第一壓力及上述第二壓力，該第二空間 位於較上述基板更下侧，並且包含設置於上述平台與上述 基板之第2面之間的上述間隙部及上述槽部。 於本發明之第1形態之基板處理裝置中，較佳為上述控 制部以使上述第一壓力及上述第二壓力之壓力差成為 5xiO[Pa]以上lxl〇5[Pa]以下之方式，對上述第一壓力及上 述第二壓力進行特定時間控制。 於本發明之第1形態之基板處理裝置中，較佳為上述氣 體供給部向上述第一空間導入之氣體係於使上述腔室内之 環境自真空恢復至大氣環境時向上述腔室内供給之氣體。 於本發明之第1形態之基板處理裝置中，較佳為上述平 台包含使上述基板之上述第2面與上述平台接觸之接觸 部’且上述接觸部之表面粗糙度Raa1() μιη以上。 於本發明之第1形態之基板處理裝置中，較佳為於上述 平台上設置有上述基板之狀態下，在上述平台與上述基板 之上述第2面之間存在3.5 cm3以上之上述間隙部。 於本發明之第1形態之基板處理裝置中，較佳為於將上 述平台與上述基板接觸之接觸面積以S1表示，且將上述平 σ與上述基板未接觸之非接觸面積以μ表示之情形時，相 較於上述平台之中央區域之比率Sl/S2，上述平台之外周 區域上比率S1/S2較小。 157314.doc 201213758 於本發明之第丨形態之基板處理裝置中，較佳為上述平 台包含上述基板之上述第2面與上述平台接觸之接觸部， 且位於上述平台之中央區域之上述接觸部的高度低於位於 上述平台之外周區域之上述接觸部的高度。 本發明之第2形態之基板冷卻方法使用基板處理裝置， • 該基板處理裝置包含：腔室· ，平台，其具有設有槽部之 面，且配置於上述腔室内，以於上述面上形成微小之間隙 部之方式載置基板，藉由與上述基板接觸並進行熱交換而 冷卻上述基板；及氣體供給部，其位於較上述平台上所載 置之上述基板之第1面更上側，並且向上述腔室内之空間 即第一空間導入特定之氣體。於本發明之第2形態之基板 冷卻方法中，於藉由使上述基板與上述平台接觸並進行熱 交換而冷卻上述基板時，以使上述第一空間之第一壓力比 第二空間之第二壓力大之方式，對上述第一壓力及上述第 二壓力進行特定時間控制’該第二空間位於較上述基板更 下側，並且包含設置於上述平台與上述基板之第2面之間 的上述間隙部及上述槽部。 本發明之第1形態之基板處理裝置包含向位於較平台上 所載置之基板之第1面更上側之第一空間導入特定之氣體 的氣體供給部，且具有以使第一空間之第一壓力比第二 空間之第二壓力P2大之方式，對壓力pi、p2進行特定時間 控制之控制部。因此’於藉由使基板與平台接觸並進行熱 交換而冷卻基板時，藉由第一空間與第二空間之壓力差而 將基板壓附於平台上。因此’可使變形為凸狀而翹曲之基 157314.doc201213758 6. TECHNOLOGICAL FIELD OF THE INVENTION The present invention relates to a substrate processing apparatus and a substrate cooling method including a load lock chamber for carrying a substrate or carrying a substrate. More specifically, the present invention relates to a substrate processing apparatus and a substrate cooling method which are capable of loading a substrate into a lock chamber and then taking the substrate out of the lock lock chamber after being properly placed in the lock chamber. [Prior Art] A semiconductor manufacturing apparatus generally has a plurality of processing chambers for processing a semiconductor substrate under reduced pressure or under vacuum. The semiconductor substrate is continuously introduced into a plurality of processing chambers for performing the manufacturing steps in accordance with a predetermined manufacturing step. The substrate is subjected to specific treatment in various chambers. Further, depending on the manufacturing steps, the interior of the treatment is usually kept vacuum before and after the start of the specific treatment. Therefore, when the semiconductor substrate is carried into the processing chamber or moved out of the processing chamber, it is necessary to load the locking chamber. In the load lock chamber, the internal pressure is reduced to a vacuum, and the pressure is reduced or returned to atmospheric pressure. As such a semiconductor manufacturing apparatus, a semiconductor manufacturing apparatus having a multi-chamber type has been widely used in recent years. The multi-chamber semiconductor manufacturing apparatus has a structure in which a single or a plurality of load lock chambers for accommodating a substrate to be processed and a substrate to be processed are disposed around a core chamber (transport chamber) in which a substrate transfer robot is disposed. A plurality of processing chambers for performing specific vacuum processing such as film formation and etching are performed. Further, the step of transferring the substrate between the load lock chamber and the processing chamber, and the step of transporting the substrate between the processing chamber and the other processing chamber 157314.doc 201213758 is performed by using a substrate transfer robot disposed in the core chamber This is carried out (for example, refer to Japanese Patent Laid-Open Publication No. 2009-206270). Here, the normal transfer step of transporting the semiconductor substrate from the load lock chamber to the processing chamber is as follows. The semiconductor substrate is introduced into the load lock chamber in an atmospheric environment, and thereafter, the inside of the load lock chamber is depressurized to become a vacuum environment. Then, the semiconductor substrate is transported from the load lock chamber to the processing chamber through the core chamber by the substrate transfer robot provided in the core chamber adjacent to the load lock chamber. Thereafter, a processing operation (e.g., etching, oxidation, chemical vapor deposition, etc.) is performed on the semiconductor substrate in the process chamber. The semiconductor substrate after the processing is returned to the loading lock chamber from the processing chamber through the core chamber by the substrate transfer robot as in the case of transporting the semiconductor substrate to the processing chamber. The inside of the loading lock chamber is kept vacuum until the substrate is transferred from the load lock chamber to the processing chamber. After the semiconductor substrate is returned to the load lock chamber, a purge gas such as nitrogen (N2) is supplied to the load lock chamber, and the pressure applied to the lock chamber is returned to atmospheric pressure (atmospheric discharge). After the pressure applied to the lock chamber reaches atmospheric pressure, the processed semiconductor substrate is moved to the substrate 匣' for the next processing step. However, in such a multi-chamber semiconductor manufacturing apparatus, when a process such as film formation of a substrate is performed, the treatment is performed at a high temperature. The substrate subjected to the treatment is taken out from the processing chamber, for example, while maintaining a high temperature of about 50 Torr, and is transferred to the load lock chamber. However, if the substrate is exposed to the atmosphere at such a high temperature, the substrate is oxidized. In addition, when the substrate in a high temperature state is stored in the storage container, problems such as melting of the resin container are usually caused. 157314.doc 201213758 To avoid this undesirable condition, the substrate is cooled while the pressure in the load lock chamber is restored from vacuum to atmospheric pressure. For example, a substrate is placed on a platform disposed in a load lock chamber, and heat is exchanged between the platform and the substrate, thereby cooling the substrate. However, previously, in the load lock chamber for cooling and atmospheric discharge of the substrate, there is The cooling rate cannot be sufficiently obtained, and there is a problem that the transport robot placed in the atmosphere generates a transport error and the device stops. Further, as a measure for sufficiently cooling the substrate, there is a problem that the amount of processing is lowered when the substrate is allowed to stand by in the lock lock chamber. Further, when the distribution of the cooling temperature is generated in the surface of the substrate during the cooling of the substrate, the substrate warps and one of the substrates leaves the stage, so that the cooling time of the substrate becomes very slow. Oh, there is a problem that the substrate is broken due to the impact of warpage. SUMMARY OF THE INVENTION The present invention has been developed in consideration of such a situation. Therefore, it is a first object to provide a substrate processing apparatus capable of cooling a substrate uniformly and rapidly without unevenness in temperature in the surface of the substrate when the substrate is cooled. Further, the present invention provides a substrate cooling method capable of cooling a substrate uniformly and rapidly without unevenness in temperature in the substrate surface when the substrate is cooled in the substrate processing apparatus. A substrate processing apparatus according to a first aspect of the present invention includes a chamber, a platform having a surface on which a groove portion is provided, and a substrate disposed in the chamber to mount a substrate so as to form a minute gap portion on the surface. Cooling the substrate by contacting the substrate and performing heat exchange; the gas supply portion is located above the first surface of the substrate disposed on the platform of 157314.doc 201213758, and the space into the chamber is And a control unit that controls the first pressure and the second pressure such that a first pressure of the first space is greater than a second pressure of the second space. The two spaces are located lower than the substrate, and include the gap portion and the groove portion disposed between the platform and the second surface of the substrate. In the substrate processing apparatus according to the first aspect of the present invention, preferably, the control unit is configured such that a pressure difference between the first pressure and the second pressure is 5×10 [Pa] or more and 1×10 〇 5 [Pa] or less. The first pressure and the second pressure are controlled for a specific time. In the substrate processing apparatus according to the first aspect of the present invention, it is preferable that the gas system introduced into the first space by the gas supply unit supplies a gas to the chamber when the environment in the chamber is restored from a vacuum to an atmosphere. . In the substrate processing apparatus according to the first aspect of the present invention, preferably, the stage includes a contact portion that brings the second surface of the substrate into contact with the land, and a surface roughness Raa1() of the contact portion is equal to or larger than a surface roughness Raa1(). In the substrate processing apparatus according to the first aspect of the present invention, it is preferable that a gap portion of 3.5 cm 3 or more exists between the land and the second surface of the substrate in a state in which the substrate is provided on the stage. In the substrate processing apparatus according to the first aspect of the present invention, it is preferable that a contact area in which the platform is in contact with the substrate is represented by S1, and a non-contact area in which the flat σ is not in contact with the substrate is represented by μ. At the time, the ratio S1/S2 in the outer peripheral region of the above-mentioned platform is small compared to the ratio S1/S2 of the central region of the above-mentioned platform. In a substrate processing apparatus according to a third aspect of the present invention, preferably, the platform includes a contact portion of the second surface of the substrate in contact with the land, and the contact portion is located in a central region of the platform. The height is lower than the height of the above-mentioned contact portion located in the outer peripheral region of the above-mentioned platform. A substrate processing apparatus according to a second aspect of the present invention uses a substrate processing apparatus. The substrate processing apparatus includes a chamber, a platform having a surface on which a groove portion is provided, and is disposed in the chamber to form on the surface. The substrate is placed on the small gap portion, and the substrate is cooled by contact with the substrate and exchanged heat, and the gas supply portion is located above the first surface of the substrate placed on the platform, and A specific gas is introduced into the space in the chamber, that is, the first space. In the substrate cooling method according to the second aspect of the present invention, the substrate is cooled by the substrate and the heat exchange, and the first pressure of the first space is made second to the second space. a method of controlling the first pressure and the second pressure to perform a specific time control, wherein the second space is located lower than the substrate, and includes the gap disposed between the platform and the second surface of the substrate And the above groove portion. A substrate processing apparatus according to a first aspect of the present invention includes a gas supply unit that introduces a specific gas into a first space that is located above a first surface of a substrate placed on a platform, and has a first space A control unit that controls the pressures pi and p2 for a specific time so that the pressure is greater than the second pressure P2 of the second space. Therefore, when the substrate is cooled by bringing the substrate into contact with the stage and performing heat exchange, the substrate is pressed against the stage by the pressure difference between the first space and the second space. Therefore, the base can be deformed into a convex shape and warped. 157314.doc

S 201213758 板以具有均句之溫度分佈之方式冷卻。進而，可抑制於冷 卻中產生之向上方變形之基板之龜曲（凸狀之龜曲藉 此，基板不會自平台上浮，可確保平台與基板接觸之接觸 面積。其結果，本發明可提供能夠使基板面内之溫度無偏 差、均勻且迅速地冷卻基板之基板處理裝置。於採用上述 平台之情形時，能夠於設計平台時，控制基板與平台之間 之接觸面積。因此，亦可防止基板上過度產生凹狀之翹 曲。 又，於本發明之第2形態之基板冷卻方法中，於藉由使 基板與平台接觸並進行熱交換而冷卻基板_，以使第一空 間之第-壓力匕比第二空間之第二壓力ρ2Α之方式而對: 力Pl、P2進行特定時間控制。因此，可藉由第一空間與第 二空間之壓力差之作用，而將基板壓附於平台丨，抑制向 上方變形之基板之翹曲（凸狀之翹曲）。藉此，基板不自平 台上浮，可確保平台與基板接觸之接觸面積。換言之，能 夠將平台與基板之距離較小之狀態延續至基板整個表面 (基板背面之廣大區域）而保持。其結果，本發明可提供能 夠使基板面内之溫度無偏差、均勻且迅速地冷卻基板之基 板冷卻方法。 【實施方式】 以下，一面參照圖式一面對本發明之基板處理裝置進行 詳細說明。再者，於以下之說明所使用之圖式中，將各構 成要素設為於圖式上可識別程度之大小，故為方便起見， 各構成要素之尺寸及比率適當地與實際之情形不同，清楚 157314.doc -10· 201213758 地說明本發明之特徵。 於本實施形態中，列舉於多腔室方式之真空處理裝置 中適用於載入鎖定室之情形作為一例說明本發明。本發 明不限疋於載人鎖定室，可適用於各種基板處理裝置。再 者此處載入鎖疋至係連接於製程室（處理室）之腔室，其 係於製程t中將處理《基板取出氣環境時所使用之裝 置。 圖1係本發明之實施形態之多腔室方式之真空處理裝置丄 的概況構成圖。該真空處理裝置丨包含：收容被處理基板 (以下僅稱為「基板」）之載入鎖定室3A、3B(3)，對基板進 行特定之真空處理之處理室4A〜4D(4)，及進行在載入鎖定 至3A、3B與處理室4A〜4D之間之基板之交接的核心室（搬 送室）5。 載入鎖定室3A、3B(3)具有相同之構成，於内部設置有 能夠收容特定枚數之基板之基板保管庫（圖示略载入鎖 定室3A、3B分別連接有排氣系統，為使各載入鎖定室 3A、3B之内部成為真空而可獨立排氣（真空排氣广再者， 載入鎖定室3A、3B如圖示之例所示不限定於設置有複數 個之情形，亦可為單個。 處理室4A〜4D(4)由餘刻室、加熱室、成膜室（藏鍍室、 CVD(Chemical Vapor Deposition，化學氣相沈積）室）等戶斤 構成，於本實施形態中，處理室4A〜4D(4)之任一者均為成 膜室。處理室4A〜4D分別連接有排氣系統（圖示略），為使 各處理室4A〜4D之内部成為真空而可獨立排氣（真空排 157314.doc 201213758 氣）。又，各處理室4A〜4D分別連接有根據製程之特定之 成膜氣體（反應氣體、原料氣體、惰性氣體等）的氣體供給 源（圖示略）。 核心室5構成為於内部具有基板搬送機器人6，在載入鎖 定室3A、3B與處理室4A〜4D之間，或在處理室4八〜4〇之 間’進行基板2之交接。核心室5連接有排氣系統（圖示 略），為使核心室5之内部成為真空而可獨立排氣（真空排 氣）。又’核心室5連接有氣體源（圖示略），可藉由自氣體 源導入至核心至5之調壓氣體’而將核心室5之内部壓力維 持為特定壓力。 圖2係模式性地表示設置於載入鎖定室3内之本發明之基 板處理裝置之一實施形態的剖面圖。 本實施形態之基板處理裝置10(3)包含：腔室u、平台 12、及氣體供給部15。平台12配置於腔室η内，且具有設 有槽部13之面12a。以於面12a上形成微小之間隙部19之方 式載置基板2。又，平台12藉由與基板2之第2面21?(其他面） 接觸並與基板2進行熱交換，而冷卻基板2 ^又，氣體供給 部15位於較平台12上所載置之基板2之第丨面2&(一面）更上 側’並且向作為腔室〗丨内之空間的第一空間α導入特定之 氣體。 進而，本實施形態之基板處理裝置1〇(3)具有控制基板2 之上側之空間之壓力（第一壓力）與基板2之下側之空間之壓 力（第二壓力）的控制部。具體而言，控制部以使第一空間 α之第一壓力ρι(藉由壓力計17a而測定之測定值）比第二空 1573l4.doc 201213758 間P之第二壓力P2(藉由壓力計17d而測定之測定值）大之方 式而控制壓力P!、P2，該第二空間位於較基板2更下側， 並且包含設置於平台12與基板2之第2面2b之間的間隙部19 及槽部13。 於圖2所示之基板處理裝置1〇(3)中，作為控制部之構 造，表示有如下構造：個別地設置有控制壓力Pl之第一控 制部17α( 17)、及控制壓力p2之第二控制部17β( 17)。第一 控制部17α例如由壓力計17a、流量計17b、閥門17c等所構 成。第二控制部17β例如由壓力計17d、流量計I7e、閥門 17f、排氣部17g等所構成。又，於圖2所示之基板處理裝 置10中之第二控制部17β中，除上述壓力計17(1、流量計 17e、閥門17f、排氣部17g以外，配置有使第二空間β與大 氣環境連通之閥門17h。 本實施形態之基板處理裝置10包含將特定之氣體導入至 第一空間α之氣體供給部15，且具有以使第一空間α之壓力 Pi比第二空間β之壓力Ρ2大之方式而控制壓力Pl、ρ2的控制 部17α、17β(17)。因此，於藉由使基板2與平台12接觸且 使用第二空間β内之氣體之熱交換而冷卻基板2時，壓力 Ρ!、Ρ2之壓力差（差壓）僅在特定時間產生。故，藉由第一 空間α與第二空間β之壓力差將基板2壓附於平台12上。因 此’可抑制基板2之中央部位於其外周部之上方之情形之 翹曲（凸狀之翹曲）的產生。藉此，基板2不自平台丨2上浮， 可確保平台12與基板2接觸之接觸面積（即，於基板2之整 個表面上，具有平台12與基板2之距離較近之狀態之區域 157314.doc -13- 201213758 的總面積）。其結果，於本實施形態之基板處理裝置ι〇 中，能夠使基板面内之溫度無偏差、均勻且迅速地冷卻基 板2。 產生壓力Pi、P2之壓力差（差壓）之情況係藉由圖1〇所示 之圖表而例示。當開始向第一空間α供給氣體時，第一空 間(X之壓力按圖10所示之實線所示之方式變動（舉動），第 二空間β之壓力Ρ2按圖10所示之點劃線所示之方式變動（舉 動）。即，當開始氣體之供給時，相對於第一空間α之壓力 Pi上升，第二空間β之壓力J>2僅在特定時間（於圖1〇中，大 約為5秒鐘）立刻出現延遲壓力上升之傾向。 於上述特定時間之範圍内，藉由產生壓力匕、P2之壓力 差（差壓），將基板2壓附於平台12上。又，若壓力匕成為5〇 Pa以上，則發揮如下之本發明之作用、效果：第二空間尽 内之氣體之熱交換起主要作用，基板2所保持之熱量積極 地向平台12轉移，進而顯然基板之冷卻成為可能。 腔室11連接有排氣部16，為使腔室丨丨之内部成為真空而 獨立排氣（真空排氣p又，腔室u連接有氣體供給部15， 可藉由自氣體供給部15導入至腔室u之氣體，將腔室“之 内部壓力維持為特定壓力。 平台12配置於腔室丨丨内，且具有設有槽部13之面i2a。 又，以於平台12之面12a上具有微小之間隙部19之方式载 置基板2»藉由平台12與基板2接觸並進行熱交換而冷卻基 板2 〇 於平台12之外周設置有具有〗mm左右之高度之堤，可 157314.doc 14 201213758 防止基板2之位置偏移。 又，於平台12上設置有複數個貫通孔18。於該貫通孔18 中’插入用以升降基板2之升降銷20。又，升降銷20能夠 通過貫通孔18，相對於平台12之表面（上表面）突出、或下 降（隱沒）。將升降銷2 0固著於桿21上，經由可伸縮之波紋 管22’連接於氣缸等驅動機構23。 而且，藉由驅動氣缸等驅動機構23，而桿21升降。於交 接基板2之情形時，使升降銷2〇自平台Q之表面（上表面）突 出。又’於將基板2載置於平台12之表面12a(上表面）上之 情形時，使升降銷20下降（下沉）至平台12之表面12a(上表 面）以下。 又’於本實施形態之基板處理裝置10中，於平台12上形 成有槽部13。藉由於平台12上設有槽部13，使自氣體供給 部15導入至腔室U内之氣體通過該槽部13進入基板2與平 台12之間的空間。藉此，主要藉由進入間隙部^之氣體作 為熱媒而作用’從而在平台12與基板2之間促進熱交換， 故有效地冷卻基板2。 進而為防止由基板2之外周部急遽地冷卻而導致基板2 翹曲為凸狀’故作為相較基板2之中央部(内周部)於外周部 上減少接觸區域之方案之―’於平台12之俯視圖中以使槽 部13之面積變大之方式計 a 飞》又斗十σ 12較好。精此，控制基板 2之冷卻速度，可減輕基板2之中央部與外周部上之冷卻之 偏倚的產生’故進而可抑制基板2之翹曲之產生。 圖3係模式性地表示於載人鎖定室卿）中，本發明之 157314.doc 201213758 基板處理裝置之一實施形態的剖面圖。圖3所示之裝置僅 包含第一控制部17α(17)作為控制部，省略第二控制部 1邛（17)〇該構造與圖2所示之裝置不同。於圖2所示之基板 處理裝置中，於能夠掌握僅在特定時間產生之壓力ρι、ρ2 之壓力差（差壓）之傾向（例如，如圖1〇所示，氣體導入後之 經過時間（橫軸）與壓力Pl、&之舉動的關係）之情形時，未 必需要構成第一控制部17β( 17)或第一控制部i 7α之壓力計 17a及流量計i7b » 再者，於曰本專利特開2009-206270號公報中，於平台 (下部冷卻板）上設置突起（晶圓支撐銷），藉由該晶圓支撐 銷，於與平台稍梢隔離之位置上支撐基板。 對此，於本發明之實施形態中，於平台12上設有槽部 13。藉由於平台12上設置槽部13而非突起，基板2與平台 12未以點接觸（即，非點接觸），而以面接觸（面接觸）。藉 此，可廣泛地確保基板2與平台12接觸之接觸面積，在平 台12與基板2之間進行熱交換，可提高冷卻效率。 又，藉由於平台12上設置槽部丨3，而週期性地設置有使 平台12與基板2成為非接觸之空間，可防止基板2自平台12 滑洛。於在基板2之第2面2b與平台12之間未形成一個氣體 導入槽之構成中，將第2面2b與平台12之間保持為真空狀 態。因此’若於基板搬送時提昇升降銷2〇舉起基板2，則 基板2自平台12稍稍彈起。因此，藉由將槽部13設置於平 台12之一個位置以上之部位，使基板2之第1面2&所露出之 空間（第一空間〇〇之壓力與基板2之第2面2b所露出之空間 157314.doc 201213758 (第二空間β)之壓力的差（壓力差）發揮作用可防止基板2 翹曲為凹形狀，並且結束基板2之冷卻。經過一定時間之 後為使第一空間α與第二空間β之差壓大致消失而決定最適 〇之槽部13之傳導，藉此可防止基板2自平台12彈起。 再者，具有藉由於平台12上形成槽部13,而降低附著於 基板2之第2面2b上之灰塵之量的效果。 作為此種槽部13之形態未特別限定，例如，如圖4所 示，亦可將槽部13設置為同心圓狀，例如，如圖5所示， 亦可將槽部13設置為放射狀。又，亦可採用將放射狀之槽 部13與同心圓狀之槽部13組合而成之構造。 又，較佳為，構成上述平台12,且與上述基板2之第2面 2b接觸之部位14(接觸部）之表面粗糙度Ragi〇以上。 若向位於基板2之上側之空間導入氣體，則氣體自基板2之 外側進入基板2與平台12之間之間隙部19。藉由導入至間 隙部19之氣體，進行基板2與平台12之熱交換’且基板之之 外周Q域比基板2之中央區域更快地被冷卻。 基板2之外周區域與中央區域之最大溫度差係根據平台 12之部位14之表面粗糙度與氣體之導入速度的關係而變 化。尤其，於平台12之表面粗糙度以為i μιη以下之情形 時，在基板2之第2面2b與平台12之間，氣體難以進入位於 基板2之中央區域之間隙部19，易於產生外周區域與中央 區域之溫度差。就結果而言，產生基板2之外周區域藉由 冷卻而收縮、基板2之中央區域不收縮之狀態。藉此，產 生使基板2之外周區域收縮之應力，且產生使基板2變形為 157314.doc -17- 201213758 凸狀之翹曲。就結果而言，無法充分確保基板2與平台12 接觸之接觸面積，且難以迅速且均句地進行基板2之冷 卻。 以使平台12之表面粗糙度Ra成為1.0 μιη以上之方式使平 台12之表面變粗糙，藉此能夠向基板2與平台12之間之間 隙部19導入氣體，且能夠高效地冷卻基板2。 進而’較佳為於平台12上設置有基板2之狀態下，在平 台12與基板2之第2面2b之間存在具有3.5 cm3以上之間隙的 間隙部19。若形成有3·5 cm3以上之空間（間隙部19)，則於 lxlO5 Pa等高壓下’降下升降器而將基板設置於平台上 時’可防止設置於基板2之下之空間（間隙部19)之壓力上升 而基板橫滑。 藉由確保在平台12與基板2之第2面2b之間具有特定以上 之容積之間隙部19，於將氣體導入至第一空間〇1時，可高 效地使乳體進入基板2與平台12之間之間隙部19，且可更 高效地冷卻基板2。 再者，於在平台12上將槽部13設置為同心圓狀之情形 時，將平台12與基板2接觸之接觸面積以S1表示，且將平 台12與基板2未接觸之非接觸面積以82表示時，接觸面積 S1與非接觸面積S2之比率（S1/S2)較佳為，相較平台12之中 央區域上之值（比率S1/S2)，外周區域上之值（比率si/s2) 較小。即，如此設定比率之構造係為使基板2之中央區域 比基板2之外周區域更早冷卻而對接觸面積之比率賦予變 化可藉由使平台12之中央區域上之值（比率S1/S2)變大， 157314.doc 18· 201213758 即’使中央區域上之基板2與平台12接觸之接觸面積變 大’而使基板2之中央區域比基板2之外周區域更早冷卻。 又’於在平台12上將槽部π設置為同心圓狀之情形時， 如圖ό所示，亦可構成平台12。具體而言，於與基板2之第 • 2面2b接觸之平台12之部位14中，位於中央區域14c之部位 14的高度hi亦可比位於外周區域Up之部位14的高度h2 低。 若部位14之高度全部相同，則於基板2以變形為凹狀之 方式翹曲之情形時，於基板2之外周區域中，無法密封基 板2與平台12之間之空間。為解決該問題，於自外周區域 14p向中央區域14c之方向上，為使部位14之高度逐漸地變 低而决疋部位14之尚度，藉此於基板2之外周區域i4p中， 可確保平台12與基板2之接觸。 氣體供給部15位於較平台12上所載置之基板2之第1面2& 更上侧，並且向腔室U内之空間即第一空間α導入特定之 氣體導入至第空間α之氣體通過形成於平台Μ上之槽 部13而進入基板2與平台12之間之空間（第二空㈣），經由曰 存，於第二^間β内之氣體進行熱交換，而冷卻基板2。 ^體供給部15向第-空間α導入之氣體係於使腔室⑽ • t環境自真空恢復為大氣環境時向腔室"内供給之氣體。 料此種氣體之種類’未特別限^，例如可列舉：氮氣、 氬氣、氦氣、氙氣等化學性穩定之氣體。 而且’本實施形態之基板處理裝置1〇(3)包含控制部 Π。該控制部17以使第-空間《之第1力P,比第二空間β 157314.doc -19- 201213758 之第二壓力P2大之方式而控制第一壓力！^及第二壓力p2， 該第二空間β位於較基板2更下側，並且包含設置於平台！ 2 與基板2之第2面2b之間的間隙部1 9及槽部13。 於使基板2與平台12接觸並進行熱交換而冷卻基板2時， 藉由以使第一空間α之第一壓力比第二空間β之第二壓力 Ρ2大之方式進行控制，利用第一空間α與第二空間β之壓力 差而將基板2壓附於平台12上。因此，可抑制使基板2變形 為凸狀之翹曲。藉此’基板2不會自平台12上浮，可確保 平台12與基板2接觸之接觸面積。其結果，於本實施形態 之基板處理裝置10中’能夠使基板面内之溫度無偏差、均 勻且迅速地冷卻基板2。 例如’於圖2所示之基板處理裝置中，第一控制部 17α( 17)例如由壓力計17a、流量計17b、閥門17c等構成。 第二控制部17β例如由壓力計17d、流量計17e、閥門17f、 排氣部17g等構成。又，第一控制部17α及第二控制部17β 監控腔室11内之壓力（Ρ广Ρ2)，並且調整自氣體供給部i5 導入至腔室11内之氣體之量。 較佳為，控制部17(17α、17β)以使壓々ρ!與壓力p2之差 成為 5xl0[Pa]以上 lxl05[Pa]以下（即，50[Pa]〜l〇〇〇〇〇[pa]) 之方式’對壓力P1、P2進行特定時間控制。若壓力差較 小，則將基板2壓附於平台12上之力較弱，難以充分地抑 制基板2之翹曲。另一方面，若壓力差過大，則於間隙部 19之邊緣上對基板2施加應力’易於產生基板破裂，從而 不佳。然而，於基板之翹曲較大之情形時，需要比較高之 157314.doc •20· 201213758 壓力差。於基板之趣曲較大，is板易於破裂之情形時， 較佳為適當地設計+台12 ’卩分散地配置平台12之間隙部 19及槽部13，緩和應力集中。 作為以分散之方式配置有本發明中之間隙部19及槽部13 之構造的一例，例如，可列舉將間隙部19與槽部13交替配 置為同心圓狀之構造。X，可列舉以於平台12上形成複數 個點狀間隙部19，且在鄰接之間隙部19之間形成槽部13之 方式，配置有間隙部19與槽部13之構造。然而，以分散之 方式配置有本發明中之間隙部19及槽部13之構造不限定於 此兩個例示。即，若能夠按每個單位面積將支撐基板2之 部分（間隙部19)分散地配置於平台12上，則亦可採用任何 構成。 再者，亦可於平台12内設置有使冷卻水等冷媒循環之冷 媒流路（圖示略）。可藉由於冷媒流路上流動冷媒，而在平 台12上所載置之基板2與平台12之間促進熱交換，高效地 冷卻基板2 ^ 其次，說明於此種多腔室方式之真空處理裝置丨中，使 用載入鎖疋至將基板2搬送至處理室之通常搬送步驟。 首先’於大氣環境中將基板2導入至載入鎖定室3内，其 後，將載入鎖定室3之内部減壓，成為真空環境。繼而， 藉由鄰接於載入鎖定室3之核心室5中所設置之基板搬送機 器人6，將基板2自載入鎖定室3經由核心室5搬送至處理室 4。其後，於處理室4(製程腔室）内，對基板2實施處理操作 (例如蝕刻、氧化、化學氣相蒸鍍等）。 157314.doc -21- 201213758 處理後之基板2與將基板2搬送至處理室4時相同，藉由 基板搬送機器人6自處理室4經由核心室5返回至載入鎖定 室3。於將基板2自上述載入鎖定室3搬送至處理室4以後， 使載入鎖定室3之内部一直保持為真空。基板2返回至載入 鎖定室3之後，將氮氣（NO等淨化氣體供給至載入鎖定室3 内’使載入鎖定室3之壓力恢復為大氣壓（以下稱為大氣排 放）。又’經加熱之基板2藉由載入鎖定室3内所設之上述 平台12而冷卻。載入鎖定室3之壓力達到大氣壓後，將經 處理過之基板2移至基板1£，進行下一處理步驟。 本發明之實施形態之基板冷卻方法係於藉由使基板2與 平台12接觸並進行熱交換而冷卻基板2時，以使第一空間α 之第一壓力Pi比第二空間β之第二壓力Pa大之方式而控制 第一壓力Pi及第二壓力Ρ2’該第二空間β位於較基板2更下 側’並且包含ax置於平台12與基板2之第2面2 b之間的間隙 部19及槽部13。 先前，於減壓下’藉由於基板2與平台12之間產生之熱 交換而將基板2冷卻至需要之溫度，故於其距離為〇.3 mm 之情形時以15秒鐘結束’而於其距離為2 mm之情形時需花 費1分鐘以上。 例如’為使直徑300 mm、厚度〇·7 mm之矽基板之溫度 自500°C變為常溫而冷卻矽基板時，若矽基板之外周區域 急遽地冷卻至常溫，則於矽基板上會產生2 mm以上之翹 曲。其結果，於妙基板之上側方向上，石夕基板之中央區域 凸起’矽基板翹曲為凸狀，且矽基板之中央區域離開平台 157314.doc -22- 201213758 12之表面，因而矽基板之中央區域之冷卻速度急遽地下 降。 其結果使得基板2之翹曲維持為2 mm以上之狀態。又， 右中央區域之溫度接近外周區域之溫度，則具有翹曲之基 板2開始恢復原本之形狀並且開始急遽地冷卻。因此，於 具有翹曲之基板2恢復至原本之形狀時，存在於基板2與平 台12之間之空間内之氣體會殘留，且不會以具有方向性之 方式流動。因此，基板2會於平台12上滑動。又，於基板2 翹曲為與凸狀形狀相反之形狀、即翹曲為凹狀之情形等， 當具有翹曲之基板2恢復至原本之形狀時，會因反作用使 基板2於平台12上彈起，而有基板2於平台12上之位置偏離 等之情形。 對此’於本發明之基板冷卻方法中，如圖丨〇所示，藉由 使基板2與平台12接觸並進行熱交換而冷卻基板2。此時， 以使第一空間α之壓力Ρι比第二空間β之壓力I大之方式對 壓力Ρ!、Pa進行特定時間控制。此處，第二空間ρ係位於 較基板2更下側，且包含設置於平台12與基板2之第2面2b 之間之間隙部19及槽部13的空間。而且，於該特定時間 中’藉由第一空間α與第二空間β之壓力差將基板2壓附於 平台12上’可抑制使基板2變形為凸狀之翹曲之產生。藉 此’基板2不會自平台12上浮，確保平台12與基板2接觸之 接觸面積’可解決無法冷卻基板2之中央區域之問題。其 '结果’於本發明之基板冷卻方法中，能夠使基板面内之溫 度無偏差、均勻且迅速地冷卻基板2。 157314.doc -23- 201213758 進而’根據本發明，於加熱基板2之中央區域時冷卻基 板2之外周區域之狀態下藉由大氣搬送機器人之真空夾頭 搬送基板2時’可回避因基板2之勉曲較大故無法使用真空 失頭之問題。 若第一空間α之壓力Ρι變為大氣壓且基板2之冷卻結束， 則打開設置於腔室11之下侧之閥門17h，使第二空間p之壓 力P2與第一空間α之壓力Pl相同。藉此，於藉由升降銷2〇 提昇基板2時，可防止基板2自平台12彈起。即，使基板2 脫離平台12時，藉由平台12吸引基板2之效果，使基板2振 動’亦可回避損傷基板2之第2面2b之問題。 又，於圖3中，於平台12與基板2之間存在未圖示之槽。 該槽係指設置於與基板2接觸之平台12之間隙部19之面上 的細微之凹凸形狀。此種槽形成於間隙部19之面上，故如 圊1〇所示隨著時間經過，第一空間α之壓力p〗與第二空間p 於圖3所示之構成中，亦可回 之壓力Pa成為同等。因此， 避上述損傷之問題。 繼而，對為確認本發明之效果而進行之實驗例進行說 示於藉由本發明之方法而冷卻基板之The S 201213758 board is cooled in a manner that has a uniform temperature distribution. Further, it is possible to suppress the tortuosity of the substrate which is deformed upward during cooling (the convex shape is curved, whereby the substrate does not float from the platform, and the contact area between the platform and the substrate can be ensured. As a result, the present invention can provide The substrate processing apparatus capable of cooling the substrate uniformly and rapidly without any deviation in the temperature in the substrate surface. When the platform is used, the contact area between the substrate and the platform can be controlled when the platform is designed. Further, in the substrate cooling method according to the second aspect of the present invention, the substrate is cooled by the substrate in contact with the stage and heat exchange is performed to make the first space - The pressure 匕 is compared to the second pressure ρ2 第二 of the second space: the forces P1 and P2 are controlled for a specific time. Therefore, the substrate can be pressed onto the platform by the pressure difference between the first space and the second space.丨, suppressing the warpage of the substrate deformed upward (convex warpage), whereby the substrate does not float from the platform, and the contact area of the platform to the substrate can be ensured. In other words, The state in which the distance between the platform and the substrate is small is continued until the entire surface of the substrate (a large area of the back surface of the substrate) is maintained. As a result, the present invention can provide a substrate that can uniformly and rapidly cool the temperature in the surface of the substrate without deviation. [Embodiment] Hereinafter, a substrate processing apparatus according to the present invention will be described in detail with reference to the drawings. Further, in the drawings used in the following description, each component is set as a pattern. The size of the above is identifiable, so the size and ratio of each component are appropriately different from the actual situation for the sake of convenience, and the features of the present invention are clearly described in 157314.doc -10·201213758. The present invention is described as an example of a multi-chamber vacuum processing apparatus for loading a lock chamber. The present invention is not limited to a manned lock chamber and can be applied to various substrate processing apparatuses. The chamber is connected to the chamber of the process chamber (processing chamber), which is used in the process t to process the device used when the substrate is taken out of the gas environment. A configuration diagram of a multi-chamber vacuum processing apparatus 丄 according to an embodiment of the present invention. The vacuum processing apparatus 丨 includes a load lock chamber 3A, 3B (3, hereinafter referred to simply as "substrate"). The processing chambers 4A to 4D(4) for performing specific vacuum processing on the substrate, and the core chamber (transporting chamber) 5 for loading and unloading the substrates locked between the 3A and 3B and the processing chambers 4A to 4D. The load lock chambers 3A and 3B (3) have the same configuration, and are provided with a substrate storage unit capable of accommodating a specific number of substrates (the exhaust systems are respectively connected to the lock lock chambers 3A and 3B, in order to The inside of each of the load lock chambers 3A and 3B is vacuumed and can be independently exhausted (the vacuum exhaust gas is widened, and the load lock chambers 3A and 3B are not limited to the case where a plurality of the lock chambers 3A and 3B are provided, and Can be single. The processing chambers 4A to 4D (4) are composed of a remnant chamber, a heating chamber, a film forming chamber (a plating chamber, a CVD (Chemical Vapor Deposition) chamber), and the like, and in the present embodiment, the processing chamber Any of 4A to 4D (4) is a film forming chamber. Each of the processing chambers 4A to 4D is connected to an exhaust system (not shown), and the inside of each of the processing chambers 4A to 4D is evacuated (vacuum discharge 157314.doc 201213758 gas). Further, a gas supply source (not shown) corresponding to a specific film forming gas (reaction gas, source gas, inert gas, etc.) according to the process is connected to each of the processing chambers 4A to 4D. The core chamber 5 is configured to have a substrate transfer robot 6 therein, and to transfer the substrate 2 between the load lock chambers 3A and 3B and the process chambers 4A to 4D or between the processing chambers 4 to 4 inches. An exhaust system (not shown) is connected to the core chamber 5, and the inside of the core chamber 5 can be independently evacuated (vacuum exhaust). Further, the core chamber 5 is connected to a gas source (not shown), and the internal pressure of the core chamber 5 can be maintained at a specific pressure by the pressure regulating gas introduced from the gas source to the core to 5. Fig. 2 is a cross-sectional view schematically showing an embodiment of the substrate processing apparatus of the present invention provided in the load lock chamber 3. The substrate processing apparatus 10 (3) of the present embodiment includes a chamber u, a stage 12, and a gas supply unit 15. The stage 12 is disposed in the chamber n and has a face 12a provided with a groove portion 13. The substrate 2 is placed in such a manner that a minute gap portion 19 is formed on the surface 12a. Further, the stage 12 is cooled by contacting the second surface 21 (other surface) of the substrate 2 and exchanging heat with the substrate 2, and the gas supply portion 15 is located on the substrate 2 placed on the platform 12. The second surface 2& (one side) is further upper side and introduces a specific gas into the first space α which is a space in the chamber. Further, the substrate processing apparatus 1 (3) of the present embodiment has a control unit that controls the pressure (first pressure) of the space on the upper side of the substrate 2 and the pressure (second pressure) of the space on the lower side of the substrate 2. Specifically, the control unit sets the first pressure ρι of the first space α (measured value measured by the pressure gauge 17a) to the second pressure P2 of the second space 1573l4.doc 201213758 (by the pressure gauge 17d) And measuring the pressure P!, P2, the second space is located on the lower side of the substrate 2, and includes a gap portion 19 disposed between the platform 12 and the second surface 2b of the substrate 2 and Slot portion 13. In the substrate processing apparatus 1A (3) shown in FIG. 2, the structure of the control unit has a structure in which the first control unit 17α (17) that individually controls the control pressure P1 and the control pressure p2 are provided. The second control unit 17β (17). The first control unit 17α is constituted by, for example, a pressure gauge 17a, a flow meter 17b, a valve 17c, and the like. The second control unit 17β is constituted by, for example, a pressure gauge 17d, a flow meter I7e, a valve 17f, an exhaust unit 17g, and the like. Further, in the second control unit 17β of the substrate processing apparatus 10 shown in FIG. 2, in addition to the pressure gauge 17 (1, the flow meter 17e, the valve 17f, and the exhaust unit 17g, the second space β is disposed. The valve 17h of the atmosphere is connected. The substrate processing apparatus 10 of the present embodiment includes a gas supply unit 15 that introduces a specific gas into the first space α, and has a pressure such that the pressure Pi of the first space α is higher than the pressure of the second space β. The control units 17α and 17β (17) of the pressures P1 and ρ2 are controlled in a manner of 2, and therefore, when the substrate 2 is brought into contact with the stage 12 and the substrate 2 is cooled by heat exchange of gas in the second space β, The pressure difference (differential pressure) of the pressure Ρ!, Ρ2 is generated only at a specific time. Therefore, the substrate 2 is pressed onto the stage 12 by the pressure difference between the first space α and the second space β. Therefore, the substrate 2 can be suppressed. The warp (convex warp) of the case where the central portion is located above the outer peripheral portion thereof, whereby the substrate 2 does not float from the platform 丨 2, and the contact area of the platform 12 with the substrate 2 can be ensured (ie, On the entire surface of the substrate 2, having a platform 12 and a substrate 2 As a result, in the substrate processing apparatus of the present embodiment, the temperature in the substrate surface can be uniformly and rapidly cooled without any deviation in the state of the region 157314.doc -13 - 201213758. Substrate 2. The case where the pressure difference (differential pressure) between the pressures Pi and P2 is generated is exemplified by the graph shown in Fig. 1. When the gas is supplied to the first space α, the first space (the pressure of X is as shown) The mode indicated by the solid line shown by 10 is changed (behavior), and the pressure Ρ2 of the second space β is varied (acting) in the manner shown by the alternate long and short dash line shown in Fig. 10. That is, when the supply of the gas is started, the relative The pressure Pi in the first space α rises, and the pressure J>2 in the second space β immediately has a tendency to delay the pressure rise at a specific time (about 5 seconds in Fig. 1A). In the inside, the substrate 2 is pressed against the stage 12 by the pressure difference (difference) of the pressure 匕 and P2. When the pressure 匕 is 5 〇 Pa or more, the following effects and effects of the present invention are exerted: The heat exchange of gas in the space of the second space Therefore, the heat retained by the substrate 2 is actively transferred to the stage 12, and it is apparent that the cooling of the substrate is possible. The chamber 11 is connected with the exhaust portion 16, and is independently exhausted to make the inside of the chamber become a vacuum (vacuum discharge) In addition, the gas supply unit 15 is connected to the chamber u, and the internal pressure of the chamber can be maintained at a specific pressure by the gas introduced into the chamber u from the gas supply unit 15. The stage 12 is disposed in the chamber 丨丨Further, the surface i2a having the groove portion 13 is provided. Further, the substrate 2 is placed on the surface 12a of the stage 12 so as to have a small gap portion 19, and the substrate 12 is brought into contact with the substrate 2 to be cooled by heat exchange. The substrate 2 is disposed on the outer periphery of the platform 12 with a bank having a height of about 〖mm. The position of the substrate 2 can be prevented from being displaced by 157314.doc 14 201213758. Further, a plurality of through holes 18 are provided in the stage 12. A lift pin 20 for lifting and lowering the substrate 2 is inserted into the through hole 18. Further, the lift pin 20 can protrude or descend (hide) with respect to the surface (upper surface) of the stage 12 through the through hole 18. The lift pin 20 is fixed to the rod 21, and is connected to a drive mechanism 23 such as a cylinder via a bellows 22'. Further, the rod 21 is raised and lowered by driving the drive mechanism 23 such as a cylinder. In the case where the substrate 2 is transferred, the lift pin 2 is protruded from the surface (upper surface) of the stage Q. Further, when the substrate 2 is placed on the surface 12a (upper surface) of the stage 12, the lift pins 20 are lowered (sinked) below the surface 12a (upper surface) of the stage 12. Further, in the substrate processing apparatus 10 of the present embodiment, the groove portion 13 is formed on the stage 12. By providing the groove portion 13 on the stage 12, the gas introduced into the chamber U from the gas supply portion 15 enters the space between the substrate 2 and the stage 12 through the groove portion 13. Thereby, the heat is exchanged between the stage 12 and the substrate 2 by the action of the gas entering the gap portion as a heat medium, so that the substrate 2 is effectively cooled. Further, in order to prevent the substrate 2 from being warped by the peripheral portion of the substrate 2, the substrate 2 is warped to be convex, so that the center portion (inner peripheral portion) of the substrate 2 has a reduced contact area on the outer peripheral portion. In the plan view of Fig. 12, it is preferable to calculate "a fly" in such a manner that the area of the groove portion 13 becomes large. In this case, the cooling rate of the substrate 2 can be controlled to reduce the occurrence of the deflection of the cooling between the central portion and the outer peripheral portion of the substrate 2, so that the occurrence of warpage of the substrate 2 can be suppressed. Fig. 3 is a cross-sectional view showing an embodiment of a substrate processing apparatus of the 157314.doc 201213758 of the present invention, which is schematically shown in a manned lock room. The apparatus shown in Fig. 3 includes only the first control unit 17α (17) as a control unit, and the second control unit 1 (17) is omitted. This configuration is different from the apparatus shown in Fig. 2. In the substrate processing apparatus shown in FIG. 2, it is possible to grasp the pressure difference (differential pressure) of the pressures ρ1 and ρ2 generated only at a specific time (for example, as shown in FIG. 1A, the elapsed time after gas introduction ( In the case of the horizontal axis) and the relationship between the pressures P1 and &, the pressure gauge 17a and the flow meter i7b constituting the first control unit 17β (17) or the first control unit i 7α are not necessarily required. In Japanese Laid-Open Patent Publication No. 2009-206270, a projection (wafer support pin) is provided on a platform (lower cooling plate), and the wafer support pin supports the substrate at a position separated from the platform tip. In contrast, in the embodiment of the present invention, the groove portion 13 is provided on the stage 12. By providing the groove portion 13 on the platform 12 instead of the protrusion, the substrate 2 and the stage 12 are not in point contact (i.e., non-point contact) but in surface contact (surface contact). Thereby, the contact area of the substrate 2 in contact with the stage 12 can be widely ensured, and heat exchange can be performed between the stage 12 and the substrate 2, whereby the cooling efficiency can be improved. Further, since the groove portion 3 is provided on the stage 12, a space for making the platform 12 and the substrate 2 non-contact is periodically provided, and the substrate 2 can be prevented from sliding from the stage 12. In the configuration in which one gas introduction groove is not formed between the second surface 2b of the substrate 2 and the stage 12, the second surface 2b and the stage 12 are maintained in a vacuum state. Therefore, if the lift pin 2 is lifted up while the substrate is being transported, the substrate 2 is lifted up, and the substrate 2 is slightly bounced from the stage 12. Therefore, by providing the groove portion 13 at a position above the one position of the stage 12, the exposed space of the first surface 2& of the substrate 2 (the pressure of the first space 与 and the second surface 2b of the substrate 2 are exposed) The difference (pressure difference) of the pressure of the space 157314.doc 201213758 (the second space β) acts to prevent the substrate 2 from being warped into a concave shape and to terminate the cooling of the substrate 2. After a certain period of time, the first space α is The difference in pressure between the second spaces β is substantially lost, and the conduction of the optimum groove portion 13 is determined, whereby the substrate 2 can be prevented from bounced from the platform 12. Further, the groove portion 13 is formed on the stage 12, and the adhesion is lowered. The effect of the amount of dust on the second surface 2b of the substrate 2. The form of the groove portion 13 is not particularly limited. For example, as shown in Fig. 4, the groove portion 13 may be provided concentrically, for example, As shown in Fig. 5, the groove portion 13 may be radially formed. Further, a structure in which the radial groove portion 13 and the concentric groove portion 13 are combined may be employed. a portion 12 (contact portion) of the platform 12 in contact with the second surface 2b of the substrate 2 When the gas is introduced into the space above the substrate 2, the gas enters the gap portion 19 between the substrate 2 and the stage 12 from the outside of the substrate 2. The gas introduced into the gap portion 19 is The heat exchange between the substrate 2 and the stage 12 is performed and the peripheral Q domain of the substrate is cooled faster than the central region of the substrate 2. The maximum temperature difference between the outer peripheral region and the central region of the substrate 2 is based on the surface of the portion 14 of the platform 12. The roughness changes depending on the introduction speed of the gas. In particular, when the surface roughness of the stage 12 is i μm or less, it is difficult for gas to enter the substrate 2 between the second surface 2b of the substrate 2 and the stage 12. The gap portion 19 in the central region is liable to cause a temperature difference between the outer peripheral region and the central region. As a result, the outer peripheral region of the substrate 2 is contracted by cooling, and the central region of the substrate 2 is not contracted. The stress in the peripheral region of the substrate 2 shrinks, and the substrate 2 is deformed into a convex warp of 157314.doc -17-201213758. As a result, the substrate 2 and the stage 12 cannot be sufficiently ensured. The contact area is touched, and it is difficult to quickly and uniformly cool the substrate 2. The surface of the stage 12 is roughened so that the surface roughness Ra of the stage 12 becomes 1.0 μm or more, whereby the substrate 2 and the stage 12 can be The gas is introduced into the gap portion 19, and the substrate 2 can be efficiently cooled. Further, it is preferable that the substrate 12 is provided with the substrate 2, and there is a 3.5 between the stage 12 and the second surface 2b of the substrate 2. When the gap portion 19 having a gap of cm3 or more is formed in a space of 3·5 cm 3 or more (gap portion 19), when the lower electrode is lowered and the substrate is placed on the stage at a high pressure such as lxlO5 Pa, it can be prevented from being disposed on the substrate. The pressure in the space below (the gap portion 19) rises and the substrate slides. By ensuring a gap portion 19 having a specific volume or more between the stage 12 and the second surface 2b of the substrate 2, when the gas is introduced into the first space 〇1, the milk can be efficiently introduced into the substrate 2 and the stage 12. The gap portion 19 is interposed and the substrate 2 can be cooled more efficiently. Moreover, when the groove portion 13 is arranged concentrically on the platform 12, the contact area of the platform 12 in contact with the substrate 2 is represented by S1, and the non-contact area where the platform 12 and the substrate 2 are not in contact is 82. In the representation, the ratio (S1/S2) of the contact area S1 to the non-contact area S2 is preferably a value on the outer peripheral area (ratio si/s2) compared to the value on the central area of the stage 12 (ratio S1/S2). Smaller. That is, the ratio is set such that the central region of the substrate 2 is cooled earlier than the peripheral region of the substrate 2, and the ratio of the contact area is changed by the value of the central region of the stage 12 (ratio S1/S2). Increasingly large, 157314.doc 18·201213758 That is, 'the contact area of the substrate 2 in contact with the stage 12 on the central area is made larger', and the central area of the substrate 2 is cooled earlier than the outer peripheral area of the substrate 2. Further, when the groove portion π is formed concentrically on the stage 12, the stage 12 may be configured as shown in Fig. 。. Specifically, in the portion 14 of the stage 12 that is in contact with the second surface 2b of the substrate 2, the height hi of the portion 14 located at the central portion 14c may be lower than the height h2 of the portion 14 located at the outer peripheral portion Up. When the heights of the portions 14 are all the same, when the substrate 2 is warped in a concave shape, the space between the substrate 2 and the stage 12 cannot be sealed in the outer peripheral region of the substrate 2. In order to solve this problem, in order from the outer peripheral region 14p toward the central region 14c, the height of the portion 14 is gradually lowered to determine the extent of the portion 14, whereby the outer peripheral region i4p of the substrate 2 can be secured. The platform 12 is in contact with the substrate 2. The gas supply unit 15 is located above the first surface 2& of the substrate 2 placed on the platform 12, and introduces a gas into which the specific gas is introduced into the space α into the space in the chamber U, that is, the first space α. The groove portion 13 formed on the platform sill enters the space between the substrate 2 and the stage 12 (the second space (four)), and heats the gas in the second portion β through the sputum to cool the substrate 2. The gas system introduced into the first space α by the body supply unit 15 supplies the gas into the chamber when the chamber (10)•t environment is restored from the vacuum to the atmospheric environment. The type of the gas is not particularly limited, and examples thereof include chemically stable gases such as nitrogen, argon, helium, and neon. Further, the substrate processing apparatus 1 (3) of the present embodiment includes a control unit Π. The control unit 17 controls the first pressure so that the first force P of the first space is larger than the second pressure P2 of the second space β 157314.doc -19-201213758! And a second pressure p2, the second space β is located on the lower side of the substrate 2, and is disposed on the platform! 2 A gap portion 19 and a groove portion 13 between the second surface 2b of the substrate 2. When the substrate 2 is brought into contact with the stage 12 and exchanged for heat exchange to cool the substrate 2, the first space is controlled so that the first pressure of the first space α is greater than the second pressure Ρ2 of the second space β, and the first space is utilized. The substrate 2 is pressed onto the stage 12 by a pressure difference between α and the second space β. Therefore, it is possible to suppress the warpage of deforming the substrate 2 into a convex shape. Thereby, the substrate 2 does not float from the stage 12, and the contact area of the platform 12 with the substrate 2 can be ensured. As a result, in the substrate processing apparatus 10 of the present embodiment, the substrate 2 can be uniformly and rapidly cooled without any variation in the temperature in the substrate surface. For example, in the substrate processing apparatus shown in Fig. 2, the first control unit 17α (17) is constituted by, for example, a pressure gauge 17a, a flow meter 17b, a valve 17c, and the like. The second control unit 17β is constituted by, for example, a pressure gauge 17d, a flow meter 17e, a valve 17f, an exhaust unit 17g, and the like. Further, the first control unit 17α and the second control unit 17β monitor the pressure in the chamber 11 (Ρ2) and adjust the amount of gas introduced into the chamber 11 from the gas supply unit i5. Preferably, the control unit 17 (17α, 17β) sets the difference between the pressure 々ρ! and the pressure p2 to be 5x10 [Pa] or more and lxl05 [Pa] or less (that is, 50 [Pa] to 1 〇〇〇〇〇 [pa]. ]) The way 'specific pressure control of pressures P1, P2. If the pressure difference is small, the force of pressing the substrate 2 against the stage 12 is weak, and it is difficult to sufficiently suppress the warpage of the substrate 2. On the other hand, if the pressure difference is too large, stress is applied to the substrate 2 on the edge of the gap portion 19, which is liable to cause cracking of the substrate, which is not preferable. However, when the warpage of the substrate is large, a relatively high pressure difference of 157314.doc •20·201213758 is required. In the case where the substrate is large in the interest and the is plate is easily broken, it is preferable to appropriately design the +-station 12 卩 to dispersely arrange the gap portion 19 and the groove portion 13 of the stage 12 to alleviate the stress concentration. An example of a structure in which the gap portion 19 and the groove portion 13 in the present invention are disposed in a dispersed manner is, for example, a structure in which the gap portion 19 and the groove portion 13 are alternately arranged in a concentric shape. X is a structure in which a plurality of dot-shaped gap portions 19 are formed on the stage 12, and the groove portions 13 are formed between the adjacent gap portions 19, and the gap portion 19 and the groove portion 13 are disposed. However, the configuration in which the gap portion 19 and the groove portion 13 in the present invention are disposed in a dispersed manner is not limited to the two examples. In other words, if the portion (the gap portion 19) of the support substrate 2 can be dispersedly disposed on the stage 12 for each unit area, any configuration can be employed. Further, a refrigerant flow path (not shown) for circulating a refrigerant such as cooling water may be provided in the stage 12. The heat exchange can be promoted between the substrate 2 placed on the platform 12 and the platform 12 by the flow of the refrigerant on the refrigerant flow path, and the substrate 2 can be efficiently cooled. Next, the vacuum processing apparatus of the multi-chamber method is described. In the normal transfer step of transferring the substrate 2 to the processing chamber, the load lock is used. First, the substrate 2 is introduced into the load lock chamber 3 in an atmospheric environment, and thereafter, the inside of the load lock chamber 3 is depressurized to become a vacuum environment. Then, the substrate 2 is transported from the load lock chamber 3 to the processing chamber 4 via the core chamber 5 by the substrate transfer robot 6 disposed adjacent to the core chamber 5 of the load lock chamber 3. Thereafter, a processing operation (e.g., etching, oxidation, chemical vapor deposition, etc.) is performed on the substrate 2 in the processing chamber 4 (process chamber). 157314.doc -21- 201213758 The substrate 2 after the processing is returned to the load lock chamber 3 via the core chamber 5 from the processing chamber 4 by the substrate transfer robot 6 in the same manner as when the substrate 2 is transported to the processing chamber 4. After the substrate 2 is transferred from the load lock chamber 3 to the processing chamber 4, the inside of the load lock chamber 3 is kept at a vacuum. After the substrate 2 is returned to the load lock chamber 3, nitrogen gas (purified gas such as NO is supplied into the load lock chamber 3) returns the pressure applied to the lock chamber 3 to atmospheric pressure (hereinafter referred to as atmospheric discharge). The substrate 2 is cooled by being loaded into the above-described stage 12 provided in the lock chamber 3. After the pressure applied to the lock chamber 3 reaches atmospheric pressure, the processed substrate 2 is moved to the substrate 1 for the next processing step. The substrate cooling method according to the embodiment of the present invention is to cool the substrate 2 by bringing the substrate 2 into contact with the stage 12 and performing heat exchange so that the first pressure Pi of the first space α is lower than the second pressure of the second space β. The first pressure Pi and the second pressure Ρ2' are controlled by the Pa mode, and the second space β is located on the lower side of the substrate 2 and includes a gap between the platform 12 and the second surface 2 b of the substrate 2 19 and the groove portion 13. Previously, under the reduced pressure, the substrate 2 was cooled to a desired temperature by heat exchange between the substrate 2 and the stage 12, so when the distance was 〇.3 mm, it was 15 End of the second' and take 1 minute when the distance is 2 mm For example, when the temperature of the substrate of 300 mm in diameter and 7 mm in thickness is changed from 500 ° C to normal temperature to cool the substrate, if the peripheral region of the substrate is rapidly cooled to normal temperature, the substrate is on the substrate. The warp of 2 mm or more is generated. As a result, in the upper direction of the substrate, the central region of the Shixi substrate is convex, the substrate is warped convex, and the central region of the substrate is separated from the platform 157314.doc -22 - The surface of 201213758 12, so that the cooling rate of the central region of the substrate is drastically lowered. As a result, the warpage of the substrate 2 is maintained at a state of 2 mm or more. Further, when the temperature of the right central region is close to the temperature of the peripheral region, The warped substrate 2 starts to return to its original shape and begins to cool rapidly. Therefore, when the warped substrate 2 returns to its original shape, gas existing in the space between the substrate 2 and the stage 12 remains, and It does not flow in a directional manner. Therefore, the substrate 2 slides on the stage 12. Further, when the substrate 2 is warped to have a shape opposite to the convex shape, that is, the warpage is concave, When the warped substrate 2 is restored to its original shape, the substrate 2 is bounced on the stage 12 due to the reaction, and the position of the substrate 2 on the stage 12 is deviated, etc. This is the substrate of the present invention. In the cooling method, as shown in FIG. 2, the substrate 2 is cooled by bringing the substrate 2 into contact with the stage 12 and performing heat exchange. At this time, the pressure 第一 of the first space α is larger than the pressure I of the second space β. In this manner, the pressure Ρ!, Pa is controlled for a specific time. Here, the second space ρ is located on the lower side of the substrate 2 and includes a gap portion 19 disposed between the platform 12 and the second surface 2b of the substrate 2 and The space of the groove portion 13. Moreover, the pressing of the substrate 2 onto the stage 12 by the pressure difference between the first space α and the second space β during the specific time can suppress the warpage of deforming the substrate 2 into a convex shape. Produced. By this, the substrate 2 does not float from the platform 12, and the contact area of the substrate 12 in contact with the substrate 2 can solve the problem that the central region of the substrate 2 cannot be cooled. The "result" in the substrate cooling method of the present invention enables the substrate 2 to be cooled uniformly and rapidly without any variation in the temperature in the plane of the substrate. 157314.doc -23-201213758 Further, according to the present invention, when the substrate 2 is transported by the vacuum chuck of the atmospheric transfer robot while cooling the outer peripheral region of the substrate 2 in the central region of the substrate 2, the substrate 2 can be avoided. If the distortion is large, the problem of vacuum loss can not be used. When the pressure of the first space α becomes atmospheric pressure and the cooling of the substrate 2 is completed, the valve 17h provided on the lower side of the chamber 11 is opened, so that the pressure P2 of the second space p is the same as the pressure P1 of the first space α. Thereby, when the substrate 2 is lifted by the lift pins 2, the substrate 2 can be prevented from bouncing from the stage 12. That is, when the substrate 2 is separated from the stage 12, the effect of the substrate 2 being attracted to the substrate 2 causes the substrate 2 to vibrate, and the problem of damaging the second surface 2b of the substrate 2 can be avoided. Further, in FIG. 3, a groove (not shown) is present between the stage 12 and the substrate 2. This groove means a fine concavo-convex shape provided on the surface of the gap portion 19 of the stage 12 which is in contact with the substrate 2. Such a groove is formed on the surface of the gap portion 19, so that as time 经过1〇 is shown, the pressure p of the first space α and the second space p are in the configuration shown in FIG. The pressure Pa becomes equal. Therefore, avoid the above problem of damage. Next, an experimental example performed to confirm the effects of the present invention is described in which the substrate is cooled by the method of the present invention.

方法而冷卻基板之情形時的結果。 圖7A及圖7B係表示 情形時的結果。圖 比較圖7B所示之根據本發明而冷卻基板之結果與圖 157314.doc •24- 201213758 8A、圖8B、圖9A、及圖叩所示之根據先前方法而冷卻基 板之結果可知，於本發明中，於各地點（A〜E)上能夠均勻 且迅速地冷卻基板。 即，於本發明中，於冷卻基板時，控制部例如藉由調節 氣體之流量，而以使第一空間之壓力Ρι比第二空間之壓力 P2大之方式而控制壓力Ρι、]?2。具體而言，以使壓力&成 為1000 Pa、P2成為400 Pa而控制壓力Pl、p2。壓力Ρι與壓 力P2之壓力差為600 Pa。 由上述說明可知’該具體例之值（數字）只不過為某特定 之時刻中之數值。因為，壓力Pl、P2之關係如圖1〇所示隨 著時間之經過而變化，產生壓力差（差壓）之特定時間只不 過為5秒鐘左右。再者，於圖1〇中，表示自於第一空間内 開始流動氣體至大約5秒鐘後之時刻T，2個壓力（P!、卩2)變 得大致相等。 於圖8A及圖8B中，僅冷卻基板之外周區域，故基板之 中央區域凸起，基板以變形為凸狀之方式勉曲，其結果， 基板之中央區域離開平台面’且基板之中央區域之冷卻速 度急遽地降低。 對此’如圖7B所示於本發明中，以使第一空間之壓力p^ 比第二空間之壓力P2大之方式而控制上述壓力Ρι、p2，藉 此利用第一空間與第二空間之壓力差將基板壓附於平台 上，可抑制凸狀之翹曲。藉此，基板不自平台上浮，可確 保平台與基板接觸之接觸面積，且冷卻基板之中央區域。 其結果’確認能夠使基板面内之溫度無偏差、均勻且迅速 157314.doc •25- 201213758 地冷卻基板。 圖11所示之基板處理裝置2〇〇(3)係最簡化之裝置。圖12 係表示圖11所示之基板處理裝置所包括之平台之一例的平 面圖。此處’符號15係表示VENT配管，符號17b係表示 VENT過濾器》 於圖12所示之平台12中，將間隙部19及槽部13交替配置 為同心圓狀。又’平台12進而包含以符號A、B、C表示 之排氣槽。為使第一空間α與槽部13連通而配置有排氣槽 Α。又，為使鄰接之槽部13之空間連通而配置有排氣槽 Β、C。 圖11係表示將基板2載置於平台12上之狀態。參照圖 11，對將基板2載置於平台12上之步驟進行說明。 首先’例如將為具有350°C之基板溫度而熱處理之基板2 自搬送室（未圖示）搬送至作為LL(加載互鎖真空）室而發揮 作用之基板處理裝置200(3)内。此時，基板2藉由經提昇之 升降銷20而支撐，載置於升降銷2〇上。其後，將空間性區 分搬送室與LL室之間隔閥門（未圖示）關閉。接著，藉由使 桿21下降而使升降銷20下降，使升降銷2〇離開基板2，將 基板2載置於平台12上。 於此種圖11所示之狀態下，若關閉LL室之排氣閥門（未 圖示），且打開閥門l7c，則第一空間α之壓力&及第二空間 β之壓力Pa如圖10之圖表所示，分別描繪壓力上升曲線。 此時’通過閥門17c導入至基板處理裝置2〇〇(3)之氣體 (VENT氣體），首先’由第一空間α内放出，其後，通過箭 157314.doc -26- 201213758 頭A、B、C所示之路徑，依序於第二空間β内流動，進 而，向箭頭D、E所示之方向流動。其結果，第二空間3之 壓力P2相比第一空間α之壓力Pl變低（Ρι > p2)。藉由第一空 間α與第二空間β之壓力差發揮作用，將基板2壓附於平台 12上’故可穩定地保持基板2與平台12之間之距離。 又，可藉由改變槽部13之深度或面積，而控制基板整體 之冷卻速度。又，第一空間α與第二空間β之壓力差可藉由 如箭頭Α~Ε所示變更氣體流動之路徑之傳導而控制。因 此，可調整將基板2壓附於平台12上之力之強弱。 若基板2之翹曲較大’則存在穩定之冷卻較困難之情 形。於此種情形時，較佳為如箭頭Α〜Ε所示降低氣體流動 之路徑之傳導’並且提高VENT配管15之VENT壓力，藉此 穩定地冷卻基板2。 藉由實施此種調整，於包含最低限度之零件個數之附屬 零件之圖11所示的基板處理裝置200(3)中，亦能夠以最適 合之壓附壓力進行穩定之基板之冷卻處理。 以上’對本發明之基板處理裝置及基板冷卻方法進行了 說明，但本發明之技術範圍不限定於上述實施形態，於不 脫離本發明之主旨之範圍内可添加各種變更。 本發明可廣泛地適用於如下基板處理裝置及基板冷卻方 法中：於成膜製程等中將帶有熱量之基板轉移至载入鎖定 室内，於使載入鎖定室内之壓力自減壓狀態變更為大氣壓 狀態時，使帶有熱量之基板適當冷卻之後，將基板取出至 載入鎖定室外》 1573l4.doc -27- 201213758 【圖式簡單說明】 圖1係適用於本發明之一實施形態之多腔室方式之真空 處理裝置的概略構成圖。 圖2係模式性地表示本發明之一實施形態之基板處理裝 置（載入鎖定室）之一例的剖面圖。 圖3係模式性地表示本發明之一實施形態之基板處理裝 置（載入鎖定室）之—例的剖面圖。 圖4係表示於本發明之一實施形態之基板處理裝置中， 平台之一例的平面圖。 圖5係表不於本發明之一實施形態之基板處理裝置中， 平台之一例的平面圖。 圖6係表不於本發明之一實施形態之基板處理裝置t， 平台之一例的剖面圖。 圖7A係表示於實驗例中測定之基板之各地點（A〜E)的 圖。 圖7B係表示於實驗例中測定之基板之各地點（A〜E)的 圖。 圖8A係表示於藉由先前之方法而冷卻基板時，基板之各 地點（A〜E)上之溫度與時間之關係的圖。 圖8B係表示於藉由先前之方法而冷卻基板時，基板之各 地點（A〜E)上之溫度與時間之關係的圖。 圖9A係表示於藉由先前之方法而冷卻基板時，基板之各 地點（A〜E)上之溫度與時間之關係的圖。' 圖9B係表示於藉由先前之方法而冷卻基板時基板之各 157314.doc -28- 201213758 地點（A〜E)上之溫度與時間之關係的圖。 圖10係表示於本發明之一實施形態之基板處理裝置中， 在第一空間α之壓力P,與第二空間β之壓力h之間產生壓力 差（差壓）之情況的圖表。 圖11係模式性地表示本發明之一實施形態之基板處理裝 置（載入鎖定室）之一例的剖面圖。 圖12係表示圖11之基板處理裝置所包含之平台之一例的 平面圖。 【主要元件符號說明】 1 真空處理裝置 2 基板 2a 基板之第1面 2b 基板之第2面 3A(3) 載入鎖定室 3B(3) 載入鎖定室 4A(4) 處理室 4B(4) 處理室 4C(4) 處理室 4D(4) 處理室 5 核心室（搬送室） 6 基板搬送機器人 10(3) 基板處理裝置 11 腔室 12 平台 157314.doc •29· 201213758 12A(12) 平台 12B(12) 平台 12C(12) 平台 12a 平台之面 13 槽部 14 接觸部位 14c 中央區域 14p 外周區域 15 氣體供給部 16 排氣部 17 控制部 17a 第一控制部 17β 第二控制部 17a(17a) 壓力計 17b(17a) 流量計 17c(17a) 閥門 17d(17P) 壓力計 17e(17p) 流量計 17f(17p) 閥門 17β(17β) 排氣部 17h(17P) 閥門 18 貫通孔 19 間隙部 20 升降銷 -30- 157314.doc 201213758 21 桿 22 波紋管 23 驅動機構 100(3) 基板處理裝置 200(3) 基板處理裝置 A 排氣槽 B 排氣槽 C 排氣槽 F, 第一流量 f2 第二流量 Pi 第一壓力 P2 第二壓力 hi 度 h2 高度 a 第一空間 β 第二空間 157314.doc -31 -The result of the method of cooling the substrate. 7A and 7B show the results in the case. FIG. 7B compares the results of cooling the substrate according to the present invention shown in FIG. 7B with the results of cooling the substrate according to the previous method shown in FIGS. 157314.doc •24-201213758 8A, FIG. 8B, FIG. 9A, and FIG. In the invention, the substrate can be uniformly and rapidly cooled at each of the points (A to E). That is, in the present invention, when the substrate is cooled, the control unit controls the pressures 、, ? 2 so that the pressure of the first space is larger than the pressure P2 of the second space, for example, by adjusting the flow rate of the gas. Specifically, the pressures P1 and p2 are controlled so that the pressure & is 1000 Pa and P2 is 400 Pa. The pressure difference between the pressure Ρι and the pressure P2 is 600 Pa. As apparent from the above description, the value (number) of the specific example is merely a numerical value at a specific time. Because the relationship between the pressures P1 and P2 changes as time elapses as shown in Fig. 1, the specific time at which the pressure difference (differential pressure) is generated is only about 5 seconds. Further, in Fig. 1A, the time T from the start of the flow of the gas in the first space to about 5 seconds is shown, and the two pressures (P!, 卩2) become substantially equal. In FIGS. 8A and 8B, only the outer peripheral region of the substrate is cooled, so that the central region of the substrate is convex, and the substrate is distorted in a convex shape. As a result, the central region of the substrate is separated from the land surface and the central region of the substrate. The cooling rate is drastically reduced. In the present invention, as shown in FIG. 7B, the pressures ^, p2 are controlled such that the pressure p^ of the first space is greater than the pressure P2 of the second space, thereby utilizing the first space and the second space. The pressure difference presses the substrate onto the platform to suppress the warpage of the convex shape. Thereby, the substrate does not float from the platform, and the contact area where the platform is in contact with the substrate can be ensured, and the central region of the substrate is cooled. As a result, it was confirmed that the substrate can be cooled without unevenness, uniformity, and rapidity in the surface of the substrate. The substrate processing apparatus 2 (3) shown in Fig. 11 is the most simplified apparatus. Fig. 12 is a plan view showing an example of a stage included in the substrate processing apparatus shown in Fig. 11. Here, the symbol 15 indicates a VENT pipe, and the symbol 17b indicates a VENT filter. In the stage 12 shown in Fig. 12, the gap portion 19 and the groove portion 13 are alternately arranged in a concentric shape. Further, the platform 12 further includes exhaust grooves indicated by symbols A, B, and C. An exhaust groove 配置 is disposed to allow the first space α to communicate with the groove portion 13. Further, exhaust grooves Β and C are disposed to communicate the spaces of the adjacent groove portions 13. Fig. 11 shows a state in which the substrate 2 is placed on the stage 12. The step of placing the substrate 2 on the stage 12 will be described with reference to Fig. 11. First, for example, a substrate 2 that has been heat-treated at a substrate temperature of 350 °C is transferred from a transfer chamber (not shown) to a substrate processing apparatus 200 (3) that functions as an LL (Load Interlock Vacuum) chamber. At this time, the substrate 2 is supported by the lifted lift pin 20 and placed on the lift pin 2''. Thereafter, the space partitioning chamber and the LL chamber interval valve (not shown) are closed. Next, the lift pin 20 is lowered by lowering the rod 21, the lift pin 2 is separated from the substrate 2, and the substrate 2 is placed on the stage 12. In the state shown in FIG. 11, if the exhaust valve (not shown) of the LL chamber is closed and the valve l7c is opened, the pressure of the first space α and the pressure Pa of the second space β are as shown in FIG. The graph shows the pressure rise curve as shown in the graph. At this time, the gas (VENT gas) introduced into the substrate processing apparatus 2 (3) through the valve 17c is first 'discharged from the first space α, and thereafter, passes the arrow 157314.doc -26-201213758 heads A, B The path indicated by C flows in the second space β in order, and further flows in the directions indicated by the arrows D and E. As a result, the pressure P2 of the second space 3 becomes lower than the pressure P1 of the first space α (Ρι > p2). By the pressure difference between the first space α and the second space β, the substrate 2 is pressed onto the stage 12, so that the distance between the substrate 2 and the stage 12 can be stably maintained. Further, the cooling rate of the entire substrate can be controlled by changing the depth or area of the groove portion 13. Further, the pressure difference between the first space α and the second space β can be controlled by changing the conduction of the path of the gas flow as indicated by an arrow Α Ε Ε. Therefore, the strength of the force which presses the substrate 2 onto the stage 12 can be adjusted. If the warpage of the substrate 2 is large, there is a case where stable cooling is difficult. In this case, it is preferable to reduce the conduction of the path of the gas flow as indicated by an arrow Α to Ε and to increase the VENT pressure of the VENT pipe 15, thereby stably cooling the substrate 2. By performing such adjustment, in the substrate processing apparatus 200 (3) shown in Fig. 11 including the minimum number of parts, the substrate can be cooled stably with the optimum pressing pressure. In the above, the substrate processing apparatus and the substrate cooling method of the present invention have been described. However, the technical scope of the present invention is not limited to the above-described embodiments, and various modifications can be added without departing from the spirit and scope of the invention. The present invention can be widely applied to a substrate processing apparatus and a substrate cooling method in which a substrate with heat is transferred to a load lock chamber in a film forming process or the like, and the pressure in the load lock chamber is changed from a decompressed state to a state In the atmospheric pressure state, after the substrate with heat is properly cooled, the substrate is taken out to the load lock outdoor. 1573l4.doc -27- 201213758 [Simplified Schematic] FIG. 1 is a multi-chamber suitable for one embodiment of the present invention. A schematic configuration diagram of a chamber type vacuum processing apparatus. Fig. 2 is a cross-sectional view schematically showing an example of a substrate processing apparatus (load lock chamber) according to an embodiment of the present invention. Fig. 3 is a cross-sectional view schematically showing an example of a substrate processing apparatus (load lock chamber) according to an embodiment of the present invention. Fig. 4 is a plan view showing an example of a stage in a substrate processing apparatus according to an embodiment of the present invention. Fig. 5 is a plan view showing an example of a stage in a substrate processing apparatus according to an embodiment of the present invention. Fig. 6 is a cross-sectional view showing an example of a substrate processing apparatus t and an embodiment of the present invention. Fig. 7A is a view showing each of the points (A to E) of the substrate measured in the experimental example. Fig. 7B is a view showing each of the points (A to E) of the substrate measured in the experimental example. Fig. 8A is a view showing the relationship between temperature and time at each point (A to E) of the substrate when the substrate is cooled by the prior method. Fig. 8B is a view showing the relationship between temperature and time at each point (A to E) of the substrate when the substrate is cooled by the prior method. Fig. 9A is a view showing the relationship between temperature and time at each point (A to E) of the substrate when the substrate is cooled by the prior method. Figure 9B is a graph showing the relationship between temperature and time at each of the 157314.doc -28-201213758 locations (A to E) of the substrate when the substrate is cooled by the prior method. Fig. 10 is a graph showing a state in which a pressure difference (differential pressure) is generated between the pressure P of the first space α and the pressure h of the second space β in the substrate processing apparatus according to the embodiment of the present invention. Fig. 11 is a cross-sectional view schematically showing an example of a substrate processing apparatus (load lock chamber) according to an embodiment of the present invention. Fig. 12 is a plan view showing an example of a stage included in the substrate processing apparatus of Fig. 11. [Description of main component symbols] 1 Vacuum processing apparatus 2 Substrate 2a First surface 2b of the substrate 2D surface 3A of the substrate (3) Loading lock chamber 3B (3) Loading lock chamber 4A (4) Processing chamber 4B (4) Processing chamber 4C (4) Processing chamber 4D (4) Processing chamber 5 Core chamber (transporting chamber) 6 Substrate transfer robot 10 (3) Substrate processing device 11 Chamber 12 Platform 157314.doc • 29· 201213758 12A(12) Platform 12B (12) Platform 12C (12) Platform 12a Platform surface 13 Groove portion 14 Contact portion 14c Central region 14p Peripheral region 15 Gas supply portion 16 Exhaust portion 17 Control portion 17a First control portion 17β Second control portion 17a (17a) Pressure gauge 17b (17a) Flowmeter 17c (17a) Valve 17d (17P) Pressure gauge 17e (17p) Flowmeter 17f (17p) Valve 17β (17β) Exhaust part 17h (17P) Valve 18 Through hole 19 Gap section 20 Lifting Pin -30- 157314.doc 201213758 21 Rod 22 Bellows 23 Drive mechanism 100(3) Substrate processing unit 200(3) Substrate processing unit A Exhaust tank B Exhaust tank C Exhaust tank F, First flow rate f2 Second Flow Pi first pressure P2 second pressure hi degree h2 Height a first space β second space 157314.doc -31 -

Claims (1)

201213758 七、申請專利範圍： 1· 一種基板處理裝置，其特徵在於包含： 腔室； 平台’其具有設有槽部之面，且配置於上述腔室内， 以於上述面上形成微小之間隙部之方式載置基板，藉由 與上述基板接觸並進行熱交換而冷卻上述基板； 氣體供給部’其位於較上述平台上所載置之上述基板 之第1面更上側，並且向上述腔室内之空間即第一空間 導入特定之氣體；及 控制部，其以使上述第一空間之第一壓力比第二空間 之第一壓力大之方式而控制上述第一壓力及上述第二壓 力，該第二空間位於較上述基板更下側，並且包含設置 於上述平台與上述基板之第2面之間的上述間隙部及上 述槽部。 2. 如請求項1之基板處理裝置，其中 上述控制部以使上述第一壓力及上述第二壓力之壓力 差成為5xl0[Pa]以上lxi〇5[Pa]a下之方式，對上述第一 壓力及上述第二壓力進行特定時間控制。 3. 如請求項1或2之基板處理裝置，其中 上述氣體供給部向上述第一空間導入之氣體係於使上 述腔室内之環境自真空恢復至大氣環境時向上述腔室内 供給之氣體。 4. 如請求項1或2之基板處理裝置，其中 上述平台包含使上述基板之上述第2面與上述平台接 157314.doc 201213758 觸之接觸部，且 上述接觸部之表面粗糙度Ra為1.0 μΓη以上。 5. 如請求項1或2之基板處理裝置，其中 於上述平台上設置有上述基板之狀態下，在上述平台 與上述基板之上述第2面之間存在3.5 cm3以上之上述間 隙部。 6. 如請求項1或2之基板處理裝置，其中 於將上述平台與上述基板接觸之接觸面積以81表示， 且將上述平台與上述基板未接觸之非接觸面積以S2表示 之情形時， 相較於上述平台之中央區域之比率S1/S2，上述平台 之外周區域之比率S1/S2較小。 7. 如請求項1或2之基板處理裝置，其中 上述平台包含使上述基板之上述第2面與上述平台接 觸之接觸部，且 位於上述平台之中央區域之上述接觸部的高度低於位 於上述平台之外周區域之上述接觸部的高度。 8. —種基板冷卻方法，其特徵在於， 使用基板處理裝置，該基板處理裝置包含：腔室；平 台，其具有設有槽部之面，且配置於上述腔室内，以於 上述面上形成微小之間隙部之方式載置基板，藉由與上 述基板接觸並進行熱交換而冷卻上述基板；及氣體供給 部，其位於較上述平台上所載置之上述基板之第丨面更 上側，並且向上述腔室内之空間即第一空間導入特定之 157314.doc 201213758 氣體， 於藉由使上述基板與上述平台接觸並進行熱交換而冷 卻上述基板時， 以使上述第一空間之第一壓力比第二空間之第二壓力 大之方式，對上述第一壓力及上述第二壓力進行特定時 間控制’該第二空間位於較上述基板更下側，並且包含 «X置於上述平台與上述基板之第2面之間的上 及上述槽部。 4 157314.doc201213758 VII. Patent application scope: 1. A substrate processing apparatus, comprising: a chamber; a platform having a surface provided with a groove portion and disposed in the chamber to form a minute gap portion on the surface The substrate is placed on the substrate, and the substrate is cooled by contact with the substrate and heat exchange is performed. The gas supply portion is located above the first surface of the substrate placed on the platform, and is in the chamber. a space, that is, a first space is introduced into a specific gas; and a control unit that controls the first pressure and the second pressure such that a first pressure of the first space is greater than a first pressure of the second space The two spaces are located lower than the substrate, and include the gap portion and the groove portion disposed between the platform and the second surface of the substrate. 2. The substrate processing apparatus according to claim 1, wherein the control unit is configured to cause the pressure difference between the first pressure and the second pressure to be 5×10 [Pa] or more and 1 xi 〇 5 [Pa]a The pressure and the second pressure described above are controlled for a specific time. 3. The substrate processing apparatus according to claim 1 or 2, wherein the gas system introduced into the first space by the gas supply unit supplies the gas to the chamber when the environment in the chamber is restored from the vacuum to the atmosphere. 4. The substrate processing apparatus of claim 1 or 2, wherein the platform comprises a contact portion that contacts the second surface of the substrate with the platform 157314.doc 201213758, and the surface roughness Ra of the contact portion is 1.0 μΓη the above. 5. The substrate processing apparatus according to claim 1 or 2, wherein the gap between the platform and the second surface of the substrate is 3.5 cm3 or more in a state in which the substrate is provided on the stage. 6. The substrate processing apparatus according to claim 1 or 2, wherein a contact area in which the platform is in contact with the substrate is indicated by 81, and a non-contact area in which the platform is not in contact with the substrate is represented by S2, The ratio S1/S2 of the outer peripheral area of the above-mentioned platform is smaller than the ratio S1/S2 of the central area of the above-mentioned platform. 7. The substrate processing apparatus of claim 1 or 2, wherein the platform includes a contact portion that contacts the second surface of the substrate with the platform, and a height of the contact portion located in a central region of the platform is lower than The height of the above-mentioned contact portion in the peripheral region of the platform. 8. A substrate cooling method, comprising: a substrate processing apparatus comprising: a chamber; a platform having a surface provided with a groove portion, and disposed in the chamber to form on the surface a substrate is placed on the small gap portion, the substrate is cooled by contact with the substrate and exchanged with heat, and the gas supply portion is located above the first surface of the substrate placed on the platform, and Introducing a specific 157314.doc 201213758 gas into the first space of the space in the chamber, and cooling the substrate by contacting the substrate with the platform and performing heat exchange, so that the first pressure ratio of the first space is The second pressure of the second space is large, and the first pressure and the second pressure are controlled for a specific time. The second space is located on the lower side of the substrate, and the «X is placed on the platform and the substrate. The upper portion between the second surface and the groove portion. 4 157314.doc
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