JP2008251574A - Electrostatic chuck, manufacturing method thereof and manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrostatic chuck capable of forming minute unevenness on the rear surface of a semiconductor wafer, and to provide a manufacturing method thereof. <P>SOLUTION: The electrostatic chuck 6 for holding a semiconductor wafer 1 is provided with a plurality of protrusions 15 provided on the surface region contacting the semiconductor wafer 1. When the semiconductor wafer 1 is chucked with the heated electrostatic chuck 6, the semiconductor wafer 1 is rapidly heated and thermally expanded, and thus, the protrusions 15 of the electrostatic chuck 6 can form the minute unevenness on the rear surface of the semiconductor wafer 1. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an electrostatic chuck, a method for manufacturing the same, and a method for manufacturing a semiconductor device.

  A power device using a silicon (Si) semiconductor has been conventionally used as a device for power electronics. Devices for power electronics are required to operate at higher frequencies and higher currents, and various research and development efforts have been made to improve the performance of silicon power devices.

  However, in recent years, the performance of silicon power devices is approaching the theoretical limit. In addition, power devices may be required to operate under adverse environments such as high temperatures and radiation, but silicon semiconductors are not suitable for such adverse environments. For this reason, research has been conducted on devices using semiconductor materials instead of silicon.

  Among various semiconductors, a silicon carbide semiconductor has a wide band gap (3.26 eV in the case of 4H type), and is excellent in electrical conduction control and radiation resistance at high temperatures. In addition, it has a dielectric breakdown electric field that is about one digit higher than that of silicon, and is excellent in increasing the breakdown voltage. In addition, it has a saturation drift velocity of electrons about twice that of silicon, enabling high-frequency and high-power control. Due to these physical properties of semiconductors, silicon carbide is expected as a semiconductor material for power devices that operate at higher frequencies and higher currents.

  When an element such as a Schottky diode or a MISFET is formed using silicon carbide (SiC), the metal forming the anode or drain electrode is required to have a low resistance ohmic contact characteristic with SiC. However, since SiC has a wide band gap, it is not easy to obtain ohmic characteristics with metal.

In order to solve this problem, the techniques described in Patent Document 1 and Patent Document 2 realize ohmic characteristics by injecting impurities into SiC and performing high-temperature annealing. Patent Document 3 discloses a method of depositing a predetermined metal after implanting impurities into SiC and performing heat treatment at a high temperature.
US Pat. No. 5,409,859 US Pat. No. 5,323,022 JP 2005-508087 gazette

  In the above-described conventional technology, it is necessary to perform ion implantation at a high concentration on the back surface of the SiC wafer or to perform a high-temperature heat treatment, which increases the number of processes. In order to perform ion implantation on the back surface of the semiconductor wafer, when the semiconductor wafer is set on the electrostatic chuck of the ion implantation apparatus, it is necessary to bring the main surface of the semiconductor wafer into close contact with the surface of the electrostatic chuck. The main surface of the semiconductor wafer is the surface on the side where a part of the channel region of the transistor and the gate insulating film are formed and needs to be kept in a clean state. I want to avoid pressing.

  The present invention has been made to solve the above problems, and provides an electrostatic chuck and a manufacturing method capable of forming an ohmic contact on the back side of a semiconductor wafer without adding a special process. The purpose is to provide.

  The electrostatic chuck of the present invention is an electrostatic chuck that holds a semiconductor wafer, and includes an adsorption surface that contacts the semiconductor wafer and a heating mechanism that heats the adsorption surface, and a plurality of protrusions on the adsorption surface Is formed.

  In a preferred embodiment, the electrostatic chuck includes a detachable insulating member, and the plurality of protrusions are formed on a surface of the insulating member.

In a preferred embodiment, the insulating member of the electrostatic chuck is made of a semiconductor material having a specific resistance of 1.0 × 10 ⁸ Ω · cm or more.

  In a preferred embodiment, the semiconductor material is silicon carbide or diamond.

  In a preferred embodiment, the attracting surface of the electrostatic chuck is a surface of a dielectric layer made of AlN.

  In a preferred embodiment, the surface roughness Ra of the attracting surface of the electrostatic chuck is 1 μm or more.

  In a preferred embodiment, the surface density of the protrusions is formed to be inversely proportional to the square of the distance from the center of the adsorption surface.

  A method of manufacturing an electrostatic chuck according to the present invention is a method of manufacturing an electrostatic chuck with a heating mechanism, the step of processing a surface of an insulating member to form a plurality of protrusions on the surface, Attaching to the electric chuck, and allowing the surface on which the plurality of protrusions are formed to function as a suction surface.

  Another method for manufacturing an electrostatic chuck according to the present invention is a method for manufacturing an electrostatic chuck with a heating mechanism, the step of processing a surface of a transfer member to form a plurality of protrusions on the surface, and the electrostatic chuck. A step of heating the chuck, and a surface of the transfer member on which the plurality of protrusions are formed is made to face the suction surface of the heated electrostatic chuck, and then the transfer member is sucked by the electrostatic chuck. Forming a plurality of protrusions on the suction surface of the electrostatic chuck with the plurality of protrusions.

  A method of manufacturing a semiconductor device according to the present invention is a method of manufacturing a semiconductor device using any one of the electrostatic chucks described above, and the step of heating a surface region where a plurality of protrusions of the electrostatic chuck are formed; A step of attracting the semiconductor wafer to the surface region of the electrostatic chuck, and a step of thermally expanding the semiconductor wafer to form a plurality of recesses on the attracted surface of the semiconductor wafer.

  According to the present invention, by using the protrusions on the surface of the electrostatic chuck with a heating mechanism, a large number of fine irregularities whose depth changes sharply on the back surface of the semiconductor wafer using the thermal expansion of the semiconductor wafer. can do.

  According to the method for manufacturing an electrostatic chuck of the present invention, a plurality of protrusions can be formed in an arbitrary pattern on the surface of the electrostatic chuck.

  According to the method for manufacturing a semiconductor device of the present invention, fine irregularities can be formed on the attracting surface of the semiconductor wafer by attracting the semiconductor wafer with a heated electrostatic chuck. Contact characteristics can be improved.

  As described above, according to the present invention, since the fine irregularities whose depth changes sharply are formed on the back surface of the semiconductor wafer, the effective area of the electrode is increased and band tunneling due to electric field concentration is caused. Thus, ohmic contact can be realized.

(Embodiment 1)
First, an embodiment of an electrostatic chuck according to the present invention will be described with reference to FIG. FIG. 1 is a cross-sectional view schematically showing the configuration of the electrostatic chuck in the present embodiment.

  An electrostatic chuck 6 shown in FIG. 1 includes a graphite plate 11 covered with an insulating film 12, an electrode 13 disposed on the insulating film 12, a dielectric layer 14 covering them, and a dielectric layer 14 And an insulating member 20 disposed above. The insulating film 12 is made of an insulating material such as pBN (pyrolytic boron nitride), and the dielectric layer 14 is made of pBN or AlN (aluminum nitride). A characteristic point of the electrostatic chuck 6 of the present embodiment is that, as shown in FIG. 1, among the surfaces of the insulating member 20 disposed on the dielectric layer 14, the surface close to the semiconductor wafer 1. A plurality of protrusions 15 are formed. The electrostatic chuck 6 has a built-in heater (not shown), and the insulating member 20 can be heated to a high temperature of 400 ° C. or more by the heat generated by the heater.

  The electrode 13 is connected to a power source (not shown) through a terminal. When a voltage is applied to the electrode 13 by a power source (not shown), an electric charge is induced on the surface of the insulating member 20. As shown in FIG. 1, when the semiconductor wafer 1 is brought close to the insulating member 20, a charge having a polarity opposite to the charge induced on the surface of the insulating member 20 is induced on the opposite surface of the semiconductor wafer 1. Therefore, a Coulomb force or a Jansenler Beck force acts between the two, and the semiconductor wafer 1 can be attracted and fixed (chucked) to the electrostatic chuck 6.

  In the present specification, a region of the surface of the electrostatic chuck 6 that is in contact with the semiconductor wafer 1 is referred to as an “adsorption surface”. This suction surface may be referred to as a chuck surface or a contact surface. On the other hand, the surface of the semiconductor wafer 1 that is in contact with the “attracting surface” of the electrostatic chuck 6 is referred to as the “attracted surface”.

AlN used for the insulating member 20 is a ceramic material excellent in both thermal conductivity and electrical insulation, and is produced by sintering AlN powder. Since the average particle diameter of the particles (grains) constituting the sintered body of AlN is several μm, the surface cannot be processed into a mirror surface even if the AlN sintered body is polished, and there are irregularities such as protrusions. It tends to remain. In this embodiment, the surface roughness Ra on the attracting surface of the electrostatic chuck 6 is in a state of 1 μm or more. The height of the protrusions is preferably 1 μm to 5 μm, and the average value of the surface density is, for example, in the range of 10 ³ to 10 ¹⁰ pieces / cm ² . The “surface roughness Ra” in the present specification is defined by the arithmetic average roughness Ra standardized by JISB0601-1994.

  In the present embodiment, it is possible to form fine and steep irregularities on the back surface of the semiconductor wafer 1 using the protrusions 15 existing on the surface of the insulating member 20. The protrusions 15 may function by the convex and concave portions that the surface of the insulating member 20 inherently has, but as will be described later, the protrusions 15 are positively formed by etching or transferring the surface of the insulating member 20. It is preferable to form the protrusion 15 on the surface.

  According to the electrostatic chuck 6 of the present embodiment, after the semiconductor wafer 1 is attracted and the back surface of the semiconductor wafer 1 is pressed by the protrusions 15, the semiconductor wafer 1 is heated in this state and thermally expanded in the lateral direction. it can. If the phenomenon that the back surface of the semiconductor wafer 1 moves laterally with respect to the protrusions 15 by abrupt thermal expansion of the semiconductor wafer 1 in the close contact state, the depth / height It is possible to simultaneously form a large number of minute irregularities whose height changes sharply.

  Hereinafter, the phenomenon in which minute irregularities are formed on the attracted surface of the semiconductor wafer 1 by the electrostatic chuck 6 heated to a high temperature will be described in detail with reference to the drawings.

  FIG. 2 is a graph showing the time change of the wafer surface temperature that occurs when the SiC wafer is attracted by the electrostatic chuck 6. The vertical axis of the graph is the wafer surface temperature measured by a radiation thermometer, and the horizontal axis is time. The data shown in FIG. 2 is obtained in an experiment in which the SiC wafer is actually chucked by the electrostatic chuck 6 whose suction surface temperature is set to 400 ° C.

  When the semiconductor wafer 1 is attracted by the electrostatic chuck 6 shown in FIG. 1, first, the semiconductor wafer 1 is loaded on the chuck surface of the electrostatic chuck 6. After a period T1 (for example, 50 to 150 seconds) from the start of loading, a voltage is applied to the electrode 13 of the electrostatic chuck 6, and the semiconductor wafer 1 is attracted by the electrostatic chuck 6 (chuck start). In FIG. 2, the semiconductor wafer 1 is in close contact with the attracting surface of the electrostatic chuck 6 only in the period T2. As can be seen from FIG. 2, in the period T1 from when the semiconductor wafer 1 is loaded until it is actually attracted, the wafer surface temperature rises to about 330 ° C. and saturates. The heating of the semiconductor wafer 1 at this time is mainly performed by radiation from the surface (400 ° C.) of the electrostatic chuck 6. After that, when chucking is performed, the semiconductor wafer 1 comes into contact with the attracting surface of the electrostatic chuck 6, so that the wafer surface temperature rapidly increases and saturates at 400 ° C. (period T2) with the start of the period T2. In the period T2, the semiconductor wafer 1 is heated by direct heat conduction from the high-temperature electrostatic chuck 6. When dechucking is performed after the lapse of the period T2, the semiconductor wafer 1 is separated from the attracting surface of the electrostatic chuck 6, and thus the wafer surface temperature gradually decreases to about 330 ° C. (period T3).

  Even when the wafer surface temperature rises due to radiation from the electrostatic chuck 6 (period T1), the semiconductor wafer 1 is thermally expanded. However, since the electrostatic chuck 6 and the semiconductor wafer 1 are not in close contact, the semiconductor wafer 1 There are almost no irregularities on the surface. Thereafter, when a chuck voltage is applied to the electrode 13 of the electrostatic chuck 6, the semiconductor wafer 1 is firmly pressed against the insulating member 20 of the electrostatic chuck 6 by electrostatic force. When the semiconductor wafer 1 is pressed against the insulating member 20 of the electrostatic chuck 6 and the two are brought into close contact with each other, the wafer temperature rapidly rises as shown in FIG. 2, so that the thermal expansion of the semiconductor wafer 1 also proceeds rapidly. . That is, the semiconductor wafer 1 rapidly expands in the in-plane direction while being pressed against the insulating member 20 of the electrostatic chuck 6 by the electrostatic force acting in the thickness direction. At this time, the attracted surface of the semiconductor wafer 1 and the attracted surface of the electrostatic chuck 6 (the surface of the insulating member 20) rub against each other with a strong force.

  FIG. 3 is a scanning electron microscope (SEM) photograph showing a suction surface of a SiC wafer after a silicon carbide (SiC) semiconductor wafer is sucked by an electrostatic chuck whose surface is made of AlN. A large number of minute recesses 25 having a uniform length in the wafer radial direction were observed. Although the depth of the recess 25 is estimated to be about 1 μm, it can be made deeper depending on the height of the projection 15 formed on the insulating member 20. In the photograph of FIG. 3, the reason why the defect directions are aligned in the wafer radial direction is considered to be that the SiC wafer thermally expands radially from the wafer center. In the vicinity of the recess 25, SiC scraped off from the wafer adheres like a burr and forms a fine protrusion.

  The distance that the back surface of the semiconductor wafer 1 moves relative to the surface of the insulating member 20 in accordance with the thermal expansion of the semiconductor wafer 1 varies depending on the radial position of the semiconductor wafer 1. That is, as the distance from the center of the semiconductor wafer 1 increases, the moving distance due to thermal expansion increases proportionally. For this reason, the length of the recess 25 formed in the central portion of the semiconductor wafer 1 is shorter than the length of the recess 25 formed in the peripheral portion of the semiconductor wafer 1. For this reason, when a plurality of chips are cut out from a single semiconductor wafer 1, the size (length) of the minute recess 25 on the back surface of the chip depends on which part of the semiconductor wafer 1 each chip is cut out from. ) Will change. This may cause variations in the contact characteristics of the back electrode between chips. For this reason, it is preferable to form the minute recesses 25 with higher density closer to the center of the semiconductor wafer 1. In other words, the protrusions 15 provided on the surface of the insulating member 20 are preferably formed at a relatively high density at the center of the suction surface. For example, the in-plane distribution of the protrusions 15 is adjusted so that the number density of the protrusions 15 is increased in inverse proportion to the square of the distance from the center of the attracting surface, and the number density of the protrusions 15 is decreased as the distance from the periphery increases. Is desirable.

In addition, although the adsorption surface in the electrostatic chuck 6 of this embodiment is comprised by the surface of the insulating member 20 which consists of AlN, this invention is not limited to such a case. The adsorption surface of the electrostatic chuck 6 may be made of a semiconductor material such as SiC or diamond as long as the specific resistance is 1.0 × 10 ⁸ Ω · cm or more. When the adsorption surface is formed using a high hardness material such as AlN, SiC, diamond, etc., the wear of the protrusions 15 is suppressed, so that the back surface processing of the semiconductor wafer 1 can be performed over a long period of time.

(Embodiment 2)
Next, an embodiment of an electrostatic chuck manufacturing method according to the present invention will be described.

  4A to 4D are process cross-sectional views for explaining the manufacturing method of the electrostatic chuck according to the present embodiment.

  First, as shown in FIG. 4A, a resist layer 9a is applied to the surface of an insulating member 20 made of AlN, and then developed and exposed to form a resist mask 9b shown in FIG. 4B. . The resist mask 9 b has a pattern that defines the shape, size, and position of the protrusion 15. Next, as shown in FIG. 4C, dry etching using chlorine is performed to etch the portion of the surface of the insulating member 20 that is not covered with the resist mask 9b. Thus, the protrusion 15 as shown in FIG. 4C is formed on the surface of the insulating member 20. Thereafter, the resist mask 9b is removed from the insulating member 20 as shown in FIG.

  When the insulating member 20 is made of SiC, the protrusion 15 can be easily formed by performing the above-described dry etching using a mixed gas of chlorine and hydrogen bromide. If the insulating member 20 is made of diamond, oxygen may be used for dry etching.

  According to this embodiment, it is possible to arbitrarily set the size and arrangement of the protrusions 15 to be formed by changing the pattern of the resist mask 9b.

(Embodiment 3)
Hereinafter, another embodiment of the method for manufacturing an electrostatic chuck according to the present invention will be described with reference to FIG. FIGS. 5A to 5C are process cross-sectional views for explaining the manufacturing method of the electrostatic chuck in the present embodiment.

  First, as shown in FIG. 5A, a transfer member 10 made of, for example, SiC is prepared. The transfer member 10 is manufactured by a manufacturing method similar to the manufacturing method of the insulating member 20 in the second embodiment. A large number of transfer protrusions 8 are formed on the surface of the transfer member 10 for transfer.

  Next, as shown in FIG. 5B, an electrostatic chuck 6 having an insulating member 20 made of AlN on its upper surface is prepared, and the temperature of the insulating member 20 is heated to 400 ° C. or higher. After the transfer protrusion 8 of the transfer member 10 is arranged in a direction in contact with the surface of the insulating member 20, the electrostatic chuck 6 is started and the insulating member 20 is pressed by the transfer member 10. At this time, in the transfer member 10, the thermal compression due to the rapid chucking and the thermal expansion due to the rapid temperature rise occur simultaneously. Therefore, as shown in FIG. 6, the surface of the insulating member 20 is scraped by the transfer protrusion 8 of the transfer member 10, and a part of the shaved insulating member 20 remains on the surface and is pressed to form the protrusion 15. (FIG. 5C). Since the protrusion 15 formed in this manner is located in the vicinity of a minute recess formed by being scraped by the transfer protrusion 8 of the transfer member 10, the protrusion 15 is formed at a position substantially opposite to the transfer protrusion 8 of the transfer member 10. Will be. Therefore, by adjusting the arrangement of the transfer protrusions 8 formed on the transfer member 10, the in-plane distribution of the protrusions 15 on the insulating member 20 can be controlled.

(Embodiment 4)
Next, an embodiment of a method for manufacturing a semiconductor device according to the present invention will be described with reference to FIG. 7A and 7B are process cross-sectional views for explaining the method for manufacturing a semiconductor device according to the present embodiment.

  As shown in FIG. 7A, an electrostatic chuck 6 provided with an insulating member 20 having protrusions 15 on its surface is prepared, and a semiconductor wafer 1 made of, for example, SiC is opposed to the electrostatic chuck 6. At this time, the back surface of the semiconductor wafer 1, that is, the surface on the side where the anode electrode of the Schottky diode and the drain electrode of the vertical MOSFET are formed is arranged so as to face the insulating member 20 (load). The insulating member 20 is heated to about 400 ° C.

  Next, as shown in FIG. 7B, the semiconductor wafer 1 is chucked. At this time, the semiconductor wafer 1 undergoes simultaneous crimping by a rapid chuck and expansion due to a rapid temperature rise (see FIG. 2). As a result, as shown in FIG. 8, steep and fine recesses 25 are formed on the back surface of the semiconductor wafer 1 by the protrusions 15 of the insulating member 20. A surface SEM photograph of the recess 25 actually formed on the back surface of the semiconductor wafer 1 made of SiC is as shown in FIG.

  As described above, the amount of elongation of the semiconductor wafer 1 due to thermal expansion is larger in the peripheral portion than in the central portion of the semiconductor wafer. Therefore, when a large number of semiconductor devices are manufactured from one semiconductor wafer 1, individual semiconductor devices are used. It is preferable to adjust the density distribution of the recesses 25 formed on the back surface of the semiconductor wafer 1 so that ohmic contact can be realized. However, in a semiconductor device for high power, the entire semiconductor wafer may be used as one semiconductor element. In such a case, this is not the case.

  In the present embodiment, in order to form the recess 25 on the back surface of the semiconductor substrate 32, chucking is performed by the electrostatic chuck 6 heated to a high temperature, but the surface (exposed surface) of the chucked semiconductor wafer 1 is executed. On the other hand, processes such as ion implantation, etching, and thin film deposition may be performed. When such a treatment is performed at a high temperature, if the concave portion 25 is formed on the back surface, the contact characteristics can be effectively improved without increasing the number of manufacturing steps.

(Embodiment 5)
An embodiment of a semiconductor device manufactured according to the present invention will be described with reference to FIG. FIG. 9 is a cross-sectional view of a Schottky diode manufactured by the semiconductor manufacturing method described above.

  The Schottky diode of this embodiment includes a semiconductor substrate 32 made of SiC, a SiC layer 33 formed on the main surface of the semiconductor substrate 32, a Schottky electrode 34 formed on the upper surface of the SiC layer 33, and a semiconductor substrate 32. And an anode electrode 36 made of Ni formed on the back surface of the electrode.

  A characteristic point of the Schottky diode of this embodiment is that a large number of minute recesses 25 are formed on the back surface of the semiconductor substrate 32 made of SiC. Such a recess 25 can be easily formed by chucking the back surface of the semiconductor substrate 32 while the electrostatic chuck 6 according to the present invention is heated as described with reference to FIG. Since the recess 25 is formed by thermal expansion of the semiconductor wafer 1, it has a groove shape as shown in FIG. 3 and is formed radially from the center of the semiconductor wafer 1.

  In general, in a wide gap semiconductor represented by SiC, a contact exhibiting ohmic characteristics cannot be realized only by depositing a metal such as Ni. However, as shown in FIG. 3, when the minute recesses 25 are present on the back surface of the semiconductor substrate 32, the recesses 25 are steeply deepened, so that the electric field tends to concentrate on the portions and interband tunneling is likely to occur. . As a result, ohmic characteristics are realized.

  Although an example in which impurity implantation is not performed on the back surface of the semiconductor substrate 32 has been shown, higher effects can be obtained by performing ion implantation at a concentration as high as possible. Further, a higher effect can be obtained by performing heat treatment after the impurity implantation. Further, it is preferable to perform heat treatment after the formation of the anode electrode 36.

  In this embodiment, the anode electrode 36 of the Schottky diode is formed on the wafer surface side where the concave portion 25 is formed. However, the present invention may be applied to the cathode electrode or the anode electrode of the PN junction diode, You may apply to the drain electrode of type MOSFET, IGBT, JFET. Further, the semiconductor substrate 32 is not limited to SiC, and may be used for another wide gap semiconductor or a silicon semiconductor in which an ohmic contact is difficult to form.

  According to the electrostatic chuck, the manufacturing method thereof, and the manufacturing method of the semiconductor device of the present invention, the back surface of the wafer on which the anode electrode of the wide-gap semiconductor Schottky diode represented by the silicon carbide semiconductor and the drain electrode of the vertical MOSFET are formed. Therefore, it is possible to realize ohmic characteristics.

It is sectional drawing which shows embodiment of the electrostatic chuck by this invention. It is a graph which shows the temperature profile of the SiC wafer chucked with the heated electrostatic chuck. It is a SEM photograph of the fine recessed part formed in the back surface of a SiC wafer. FIGS. 4A to 4D are process cross-sectional views illustrating a method for manufacturing the insulating member 20 in the electrostatic chuck of FIG. 1. FIGS. 4A to 4C are process cross-sectional views illustrating another method for manufacturing the insulating member 20 in the electrostatic chuck of FIG. 1. It is sectional drawing which shows typically the formation mechanism of protrusion. (A) And (b) is process sectional drawing which shows embodiment of the manufacturing method of the semiconductor device by this invention. It is sectional drawing which shows typically the formation mechanism of the unevenness | corrugation formed in a semiconductor wafer. It is a schematic cross section of the Schottky diode produced by the manufacturing method of the semiconductor device of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 6 Electrostatic chuck 8 Transfer protrusion 9a Resist layer 9b Resist mask 10 Transfer member 11 Graphite plate 12 Insulating film 13 Electrode 14 Dielectric layer 20 Insulating member 15 Protrusion 25 Recess 32 Semiconductor substrate 33 SiC layer 34 Schottky electrode 36 Anode electrode

Claims (10)

An electrostatic chuck for holding a semiconductor wafer,
A suction surface in contact with the semiconductor wafer;
A heating mechanism for heating the adsorption surface;
With
An electrostatic chuck comprising a plurality of protrusions on the attracting surface.   The electrostatic chuck according to claim 1, wherein the electrostatic chuck includes a removable insulating member, and the plurality of protrusions are formed on a surface of the insulating member. The electrostatic chuck according to claim 2, wherein the insulating member of the electrostatic chuck is made of a semiconductor material having a specific resistance of 1.0 × 10 ⁸ Ω · cm or more.   The electrostatic chuck according to claim 1, wherein the semiconductor material is silicon carbide or diamond.   The electrostatic chuck according to claim 1, wherein the attracting surface of the electrostatic chuck is a surface of a dielectric layer made of AlN.   6. The electrostatic chuck according to claim 1, wherein a surface roughness Ra of the attracting surface of the electrostatic chuck is 1 μm or more.   The electrostatic chuck according to claim 1, wherein the surface density of the protrusions is formed so as to be inversely proportional to the square of the distance from the center of the attracting surface. A method of manufacturing an electrostatic chuck with a heating mechanism,
Processing the surface of the insulating member to form a plurality of protrusions on the surface;
Attaching the insulating member to an electrostatic chuck, and allowing the surface on which the plurality of protrusions are formed to function as an adsorption surface;
The manufacturing method of the electrostatic chuck containing this. A method of manufacturing an electrostatic chuck with a heating mechanism,
Processing the surface of the transfer member to form a plurality of protrusions on the surface;
Heating the electrostatic chuck;
The surface of the transfer member on which the plurality of protrusions are formed is made to face the suction surface of the heated electrostatic chuck, and then the transfer member is sucked by the electrostatic chuck, whereby the plurality of protrusions are used to Forming a plurality of protrusions on the suction surface of the electric chuck;
The manufacturing method of the electrostatic chuck containing this. A method for manufacturing a semiconductor device using the electrostatic chuck according to claim 1,
Heating the surface region where the plurality of protrusions of the electrostatic chuck are formed;
Adsorbing a semiconductor wafer to the surface region of the electrostatic chuck;
Forming a plurality of recesses on the suction surface of the semiconductor wafer by thermally expanding the semiconductor wafer; and
A method of manufacturing a semiconductor device including: