CN117981069A - 基板支撑件 - Google Patents

基板支撑件 Download PDF

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Publication number
CN117981069A
CN117981069A CN202280064023.1A CN202280064023A CN117981069A CN 117981069 A CN117981069 A CN 117981069A CN 202280064023 A CN202280064023 A CN 202280064023A CN 117981069 A CN117981069 A CN 117981069A
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substrate support
islands
support surface
substrate
dispersed
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Inventor
丛者澎
尼欧·谬
陈辉
H·D·阮
陈少峰
栾欣宁
柯克·艾伦·费希尔
艾梅·S·埃尔哈特
肖恩·约瑟夫·博纳姆
菲利普·迈克尔·阿莫斯
詹姆斯·M·阿莫斯
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Applied Materials Inc
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Applied Materials Inc
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
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    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D5/00—Supports, screens, or the like for the charge within the furnace
    • F27D5/0037—Supports specially adapted for semi-conductors

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Abstract

本文公开了基板支撑组件及具有基板支撑组件的处理腔室。在一个实施方式中，提供一种基板支撑组件，其包括主体。主体具有中心、连接基板支撑表面的外部周围、及背侧表面。主体额外地具有布置于基板支撑表面上在中心处的口袋，及布置于口袋及外部周围之间的唇部。层形成于基板支撑表面的口袋中。多个分散的岛布置于层中，其中分散的岛布置于从基板支撑表面垂直延伸的中心线四周。

Description

基板支撑件
技术领域
本文所公开的实施方式大致是关于基板支撑件；更具体而言，本文所公开的实施方式大致是关于在基板支撑表面上分散的岛的图案。
背景技术
基板支撑件广泛地使用以在用于各种应用的处理腔室中的基板处理期间保持基板，例如半导体基板，各种应用例如物理气相沉积(PVD)、蚀刻或化学气相沉积。基板支撑件通常包括一个或更多个加热器嵌入单体夹持主体之中。夹持主体可从导热材料形成，例如陶瓷材料、基于碳的材料或其他适合的材料。
基板布置于基板支撑件的顶部表面上，用于在处理腔室中处理。基板支撑件的顶部表面可具有数个台面或其他特征，以提升基板在基板支撑件的顶部表面上方。台面减少热接触，而当处理基板时强化温度均匀性。然而，通过加工在基板支撑件上形成更小的台面可造成在基板支撑件上的表面应力，且甚至造成基板支撑件的翘曲。
因此，需要一种强化的基板支撑件。
发明内容
本文公开了基板支撑组件及具有基板支撑组件的处理腔室。在一个实施方式中，提供一种基板支撑组件，其包括主体。主体具有中心、连接基板支撑表面的外部周围、及背侧表面。主体额外地具有布置于基板支撑表面上在中心处的口袋，及布置于口袋及外部周围之间的唇部。层形成于基板支撑表面的口袋中。多个分散的岛布置于层中，其中分散的岛布置于从基板支撑表面垂直延伸的中心线四周。
在另一实施方式中，提供一种处理腔室，包括基板支撑组件布置于处理腔室的处理空间中。基板支撑组件包括主体。主体具有中心、连接基板支撑表面的外部周围、及背侧表面。主体额外地具有布置于基板支撑表面上在中心处的口袋，及布置于口袋及外部周围之间的唇部。层形成于基板支撑表面的口袋中。多个分散的岛布置于层中，其中分散的岛布置于从基板支撑表面垂直延伸的中心线四周。
附图说明
以此方式可详细理解本发明以上所记载的特征，以上简要概述的本发明的更特定说明可通过参考实施方式而获得，某些实施方式图示于随附图式中。然而，应理解随附图式仅图示本发明的通常实施方式，且因此不应考虑为其范畴之限制，因为本发明可认可其他均等效果的实施方式。
图1为处理腔室的示意性剖面侧视图，其中可操作示例性的基板支撑件。
图2为在图1中显示的基板支撑件的示意性剖面细节视图。
图3A为用于基板支撑件的基板支撑表面的顶部平面视图，详细用于分散的岛的示意性布局。
图3B为图3A中显示的基板支撑件的剖面视图。
图4A-4C图示了基板支撑件的部分剖面视图，详细用于分散的岛的多个轮廓。
图5为分散的岛的剖面视图。
为了促进理解，已尽可能地使用相同的组件符号代表共通图式中相同的组件。应考虑一个实施方式的组件及特征可有益地并入其他实施方式中而无须进一步说明。
具体实施方式
如本文所述，提供一种具有多个分散的岛形成于其上的基板支撑件。分散的岛的布局及尺寸是经济地实现的，同时减少在基板支撑件上的翘曲及应力。用于形成分散的岛的新的方案移除加工的需求，且减少通过加工表面产生的应力。新的方案移除加工的需求，且减少通过加工表面产生的应力。尽管基板支撑件关于外延处理腔室的图示且说明，应理解所公开的方案及支撑件可在其他处理腔室中及其他基板支撑件的类型中使用。举例而言，可从本公开内容获益的一个基板支撑件可为静电夹盘。
图1根据本发明的实施方式，概要图示外延处理腔室100的一个实施方式的剖面视图。在一个实施方式中，可适以从本发明获益的外延处理腔室100为从美国加州圣克拉拉市的应用材料公司可取得的EPI接近大气化学气相沉积(CVD)系统。以概要显示的此处呈现的外延处理腔室100为一个实施方式，且并非意图限制所有可能的实施方式。设想其他基板处理腔室可根据此处所述的实施方式使用，包括来自其他制造商的腔室。
外延腔室100包含腔室主体101、支撑系统104及腔室控制器106。腔室主体101包括上部反射器模块102及下部灯模块103。上部反射器模块102包括在腔室主体101之中介于顶板116及布置于腔室主体101之中的基板支撑组件132之间的区域。顶板116可从透明石英或其他适合的材料形成。在一个示例中，顶板116可为上部圆顶。外延腔室100额外具有铰接传感器组件200。铰接传感器组件200耦合至外延腔室100。在一个示例中，铰接传感器组件200附加到附加至顶板116的固定板190。固定板190可额外地为反射器。固定板190将能量反射回基板，且可仅在铰接传感器组件200需要处具有开口，以具有至处理空间的视线。或者，铰接传感器组件200可直接附加至顶板116。
下部灯模块103包括在腔室主体101之中介于腔室主体101的下部部分130及基板支撑组件132之间的区域。在一个示例中，下部部分130可为下部圆顶。沉积处理大致发生于支撑在基板支撑组件132上且暴露至上部反射器模块102的基板124的上部表面上。基板124通过布置于基板124下方且从基板支撑组件132延伸的支撑销121来支撑。
上部衬垫118布置于上部反射器模块102之中，且适于避免不被期待的沉积至腔室部件上。上部衬垫118在上部反射器模块102之中邻接环123定位。环123(解释了它是什么)。
外延腔室100包括多个热源，例如灯135，而适于提供热能量至定位于外延腔室100之中的部件。举例而言，灯135可适于提供热能量至基板124及环123。下部部分130可从可选的透明材料形成，诸如石英，以促进热辐射的通路通过。
腔室主体101也包括通过腔室主体101的侧壁形成的外部入口通口198，及在上部圆顶的中心区域其中中心气体线154耦合至此而形成的中心入口通口152。外部气体线(未显示)及内部气体线111可分别耦合至外部入口通口198及中心入口通口152以传输从气体面板模块107供应的气体。排气通口127可耦合至腔室主体101以维持外延腔室100在所需要的调节压力范围下。外部入口通口198可适于提供气体，包括掺杂气体、反应气体、非反应气体、惰性气体或任何适合的气体通过至腔室主体101的上部反射器模块102中。配置成在基板124上形成外延层而至基板124上的气体的热分解通过灯135促进。
基板支撑组件132定位于腔室主体101的下部灯模块103中。基板支撑组件132图示为支撑基板124在处理位置中。基板支撑组件132包括多个支撑销121及多个举升销133。举升销133竖直地可移动，且适于接触基板124的下侧以举升基板124从处理位置(如所显示)至基板传送位置。基板支撑组件132的部件可从石英、碳化硅、以碳化硅涂布的石墨或其他适合的材料制成。
环123可移除地布置于耦合至腔室主体101的下部衬垫140上。环123布置于腔室主体101的内部空间四周，且当基板124在处理位置中时环绕基板124。环123可从热稳定材料形成，例如碳化硅、石英或以碳化硅涂布的石墨。环123与基板124的位置结合将上部反射器模块102的空间与下部灯模块103分开。当基板124定位与环123同位准时，环123引导气体流动通过上部反射器模块102。上部反射器模块102的分开的空间通过控制随着处理气体提供至外延腔室100的处理气体的流动而增强沉积均匀性。
支撑系统104包括用以执行及监控预定的处理的部件，例如在外延腔室100中外延膜的成长。支撑系统104包括气体面板模块107、气体分配导管、电源供应器及处理控制设备中的一者或更多者。腔室控制器106耦合至支撑系统104，且适于控制外延腔室100及支撑系统104。腔室控制器106包括中央处理单元(CPU)、内存及支持电路。在腔室控制器106中驻扎的指令可执行以控制外延腔室100的操作。外延腔室100适于在其中实行一个或更多个膜形成或沉积处理。举例而言，在外延腔室100之中可实行硅外延成长处理。应考虑在外延腔室100之中可实行其他处理。
在外延腔室100中的膜沉积期间，加热基板124。基板124通过吸收来自灯135的辐射而加热。基板支撑组件132及基板124旋转以最小化从灯135的直接辐射导致的温度非均匀性。
基板支撑组件132具有基板支撑件174。图2图示了基板支撑件174的示意性剖面细节视图。如所显示的，基板支撑件174具有主体175。主体174可从例如石墨等的材料制成。主体175具有背侧表面204及基板支撑表面137。基板支撑表面137用以支撑基板124。
多个分散的岛215形成于基板支撑表面137上，以最小化基板124及基板支撑件174之间的接触面积。分散的岛215可以沉积于主体175的基板支撑表面137上的一个或更多个分开的层的材料组成。
分散的岛215可具有顶部表面208及底部表面206。底部表面206可直接布置于基板支撑件174的基板支撑表面137上。分散的岛215的厚度260可较佳地选择且空间上分配横跨基板支撑表面137，以形成图案及可选地外周环225。分散的岛215大致配置成在处理期间沿着顶部表面208支撑基板124。低谷220形成于分散的岛215之间。低谷220不接触布置于基板支撑件174的基板支撑表面137的基板124。
可选地，热传送气源通过基板支撑件174耦合至基板支撑表面137以提供背侧气体至界定于分散的岛215之间的低谷220。热传送气源提供热传送气体(即，背侧气体)而在基板124的背侧及基板支撑件174之间流动，以便帮助调节基板支撑件174及基板124之间的热传送率。热传送气体可向外从基板支撑件174的中心流动且在分散的岛215四周通过低谷220且在外周环225上至处理空间116(显示于图1中)中。在一个示例中，热传送气体可包含惰性气体，诸如氩、氦、氮，或处理气体。诸如氩的热传送气体可为处理气体，且其中量测至腔室空间的流率以获得可预测的结果。热传送气体可通过与一个或更多个低谷220及热传送气源流体连通而在基板支撑件174中的一个或更多个入口222而传递至低谷220。外周环225在接近其边缘处接触基板且可较佳地设计以控制从基板124及基板支撑件174之间逃脱至处理空间的热传送气体的量。举例而言，外周环225及分散的岛215可配置成提供对传送气体流动的阻抗，使得在基板124及基板支撑件174之间存在的气体的压力不会超过预定的值。
分散的岛215可通过沉积、3D打印、层压形成，或通过其他适合的技术提供材料至基板支撑表面137。分散的岛215的形成控制分散的岛215的接触面积及通过界定于分散的岛215之间的低谷220的温度导通的两者。分散的岛215可以图案横跨基板支撑件174的基板支撑表面137形成。
图3A为用于基板支撑件174的基板支撑表面137的顶部平面视图，详细用于分散的岛215的示意性布局的一个示例。图3B为在第图3A中显示的基板支撑件137的剖面视图。基板支撑件174的主体175具有外部周围304。主体175具有口袋354及唇部352，两者更清楚地可见于图3B中。唇部354从口袋354延伸至主体175的外部周围304。唇部354额外延伸远离背侧表面204且在口袋354上方。
分散的岛215布置于基板支撑表面137上的口袋354中。基板支撑表面137具有在其四周对称布置分散的岛215的中心399。分散的岛215可具有实质上圆形的剖面形状，其中各个分散的岛215与基板支撑表面137界接。在一个示例中，各个分散的岛215对称地在从基板支撑表面137垂直延伸的中心线四周。至少某些分散的岛215可具有在分散的岛215与基板支撑表面137的界面处的直径介于约1.5mm及约4mm之间，诸如约3mm。
分散的岛215可布置于同心环320中。或者，分散的岛215可沿着从中心399延伸的半径310径向对齐。接近中心399的同心环320具有比接近基板支撑件174的外周374的同心环320更少的分散的岛215。然而，某些邻接同心环320可具有相同数量的分散的岛215。举例而言，沿着基板支撑件174的外周374的分散的岛215的同心环320的外部边缘列324与沿着基板支撑件174的外周374的分散的岛215的同心环320的第二列326可具有相同数量的分散的岛215。
应理解布置于基板支撑表面137上分散的岛215的数量及图案在形状及数目上可变化。配置可优化以减少基板127及基板支撑表面137之间的接触。如所计算，传统加工切割台面具有大约14％的基板面积的接触覆盖，而本公开内容的分散的岛具有小于7％，诸如小于4％的接触覆盖。在某些示例中，基板及基板支撑件174之间的接触面积为传统加工支撑件的约五分之一。此额外导致在制造基板支撑件174期间在基板支撑件上减少的应力。
尽管分散的岛215描绘为具有平坦顶部表面208，各个分别的分散的岛215可大致具有任何适合的形状及高度，其各者可较佳地选择以满足特定设计参数(例如所期望的气体流动及/或热传送)。图4A-4C图示了基板支撑件175的部分剖面视图，详细用于分散的岛215的多个轮廓。在图4A-4C中所显示的分散的岛215可具有实质上相同的宽度424。举例而言，分散的岛215可具有小于约5mm的宽度424。在图4A-4C中，各个分散的岛215说明从垂直于基板支撑表面137且延伸通过分散的岛215的中心撷取的剖面轮廓。
如图4A中所显示，分散的岛215具有圆顶的形状410。圆顶的形状410沿着分散的岛215的上部表面415可具有短的平坦部分452。平坦部分452可为介于宽度424的10％及50％之间。因此，圆顶的形状410在分散的岛215及基板124之间提供最小接触。
如图4B中所显示，分散的岛215为圆柱形的形状。分散的岛215具有矩形形状的剖面轮廓420。矩形形状的剖面轮廓420沿着分散的岛215的上部表面415整体为平坦的。因此，上部表面415与宽度424相同。矩形形状的剖面轮廓420在分散的岛215及基板124之间增加接触，但仍小于传统加工的台面。
如图4C中所显示，分散的岛215为锥形的形状。分散的岛215具有梯形形状的剖面轮廓430。梯形形状的剖面轮廓430沿着分散的岛215的上部表面415为平坦的。因此，梯形形状的剖面轮廓430的上部表面415小于宽度424。举例而言，梯形形状的剖面轮廓430的上部表面415可介于宽度424的90％及60％之间。梯形形状的剖面轮廓430具有比矩形形状420更小的接触。
在一个实施方式中，分散的岛215的顶部表面208可为平坦平面表面。在其他实施方式中，分散的岛215的顶部表面208可形成非平面表面，举例而言，凹的或凸的表面。一般而言，分散的岛215可具有约1微米至约100微米的分散的岛的高度262，或更佳地介于约1微米及约30微米之间，例如约15微米至约20微米。在一个实施方式中，支撑基板124的分散的岛215的表面可具有小的圆形的类似突起的形状，以最小化介于分散的岛215及基板124之间的总接触面积。在另一实施方式中，分散的岛215在大致平坦的表面顶部可包括小的突起或突出。
图5为分散的岛的剖面视图。陶瓷基板支撑件174可从石墨或其他适合的材料形成。在一个示例中，陶瓷基板支撑件174可为SiC或其他适合的材料。层530可形成于基板支撑表面137上的口袋354中。层530可从SiC或其他适合的材料形成。层530含有分散的岛215。分散的岛215横跨口袋354分散地形成。分散的岛215的尺寸及/或形状可为均匀的。分散的岛215在基板支撑表面137上方具有上部表面延伸介于约5微米及约40微米之间的高度，诸如20微米。分散的岛215可为圆顶形状。分散的岛215可以介于约2mm及4mm之间的直径形成，诸如约3mm。分散的岛215可为在基板支撑件174的顶部表面137上方的高介于约10微米至约150微米，例如小于约50微米。
然而，分散的岛215不覆盖基板支撑件174的整个口袋354。举例而言，分散的岛215可覆盖小于约7％，诸如约3％的基板支撑件174的口袋354。
有利地，在基板支撑件174的基板支撑表面137上的分散的岛215强化用于在基板支撑件174上处理的基板的热均匀性。具有圆形顶部表面的分散的岛的设计强化用于Epi处理对晶圆的热接触均匀性。缺乏基板支撑表面137的加工大幅减少导致基座翘曲的表面应力。减少基板支撑表面的加工对机器时间(bot time)以及花费提供进一步的益处。因此可减少来自加工及SiC涂布应力的基板支撑件的翘曲。在基板支撑件174上的分散的岛215及低谷220归因于改善的接触面积对基板背侧提供强化的支撑用于减少应力，且减少对基板124及基板支撑件174的随后损伤。因此，本发明所公开的实施方式提供用于基板支撑组件的特征的图案，而导向提供减少的粒子生成及基板和夹持组件的减少的磨耗。
尽管以上导向本发明的实施方式，可衍生本发明的其他及进一步实施方式而不会悖离其基本范畴。

Claims (14)

1.一种适合在半导体处理腔室中使用的基板支撑件，所述基板支撑件包含：
主体，具有中心、连接基板支撑表面的外部周围、及背侧表面；所述主体包含：
口袋，布置于所述基板支撑表面上在所述中心处；及
唇部，布置于所述口袋及所述外部周围之间；
层，形成于所述基板支撑表面的所述口袋中；及
多个分散的岛，布置于所述层中，其中所述分散的岛布置于从所述基板支撑表面垂直延伸的中心线四周。
2.如权利要求1所述的基板支撑件，其中所述层从SiC形成，且所述主体从石墨形成。
3.如权利要求1所述的基板支撑件，其中所述分散的岛具有小于约5mm的直径。
4.如权利要求3所述的基板支撑件，其中所述分散的岛具有在所述基板支撑表面上方的高度为约50微米或更少。
5.如权利要求4所述的基板支撑件，其中各个分散的岛包含：
从垂直于所述基板支撑表面且延伸通过所述分散的岛的所述中心线撷取的圆顶形状的剖面轮廓。
6.如权利要求4所述的基板支撑件，其中各个分散的岛包含：
从垂直于所述基板支撑表面且延伸通过所述分散的岛的所述中心线撷取的矩形形状的剖面轮廓。
7.如权利要求4所述的基板支撑件，其中各个分散的岛包含：从垂直于所述基板支撑表面且延伸通过所述分散的岛的所述中心线撷取的梯形形状的剖面轮廓。
8.一种等离子体处理腔室，包含：
盖、壁及底部，其界定处理空间；
基板支撑件，布置于所述处理空间中，所述基板支撑件包含：
主体，具有中心、连接基板支撑表面的外部周围、及背侧表面；所述主体包含：
口袋，布置于所述基板支撑表面上在所述中心处；及
唇部，布置于所述口袋及所述外部周围之间；
层，形成于所述基板支撑表面的所述口袋中；及
多个分散的岛，布置于所述层中，其中所述分散的岛布置于从所述基板支撑表面垂直延伸的中心线四周。
9.如权利要求8所述的等离子体处理腔室，其中所述分散的岛从SiC形成。
10.如权利要求8所述的等离子体处理腔室，其中所述分散的岛具有小于约5mm的直径。
11.如权利要求10所述的等离子体处理腔室，其中所述分散的岛具有在所述基板支撑表面上方小于约50微米的高度。
12.如权利要求11所述的等离子体处理腔室，其中各个分散的岛包含：
从垂直于所述基板支撑表面且延伸通过所述分散的岛的所述中心线撷取的圆顶形状的剖面轮廓。
13.如权利要求11所述的等离子体处理腔室，其中各个分散的岛包含：
从垂直于所述基板支撑表面且延伸通过所述分散的岛的所述中心线撷取的矩形形状的剖面轮廓。
14.如权利要求11所述的等离子体处理腔室，其中各个分散的岛包含：
从垂直于所述基板支撑表面且延伸通过所述分散的岛的所述中心线撷取的梯形形状的剖面轮廓。
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