JP2009513027A - 半導体処理チャンバ - Google Patents
半導体処理チャンバ Download PDFInfo
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- JP2009513027A JP2009513027A JP2008537749A JP2008537749A JP2009513027A JP 2009513027 A JP2009513027 A JP 2009513027A JP 2008537749 A JP2008537749 A JP 2008537749A JP 2008537749 A JP2008537749 A JP 2008537749A JP 2009513027 A JP2009513027 A JP 2009513027A
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- substrate support
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- silicon carbide
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- 238000012545 processing Methods 0.000 title claims abstract description 85
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 152
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 48
- 239000000463 material Substances 0.000 claims abstract description 15
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000005137 deposition process Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 238000000576 coating method Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 239000011230 binding agent Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- -1 plasma Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【選択図】 図1
Description
[0001]本発明の実施形態は、一般的に、集積回路を製造するための装置に関する。より詳細には、本発明は、基板に薄膜を製造するための処理チャンバに関する。
[0002]薄膜は、一般的に、シリコン(Si)ウエハ、ヒ化ガリウム(GaAs)ウエハ、ガラス又はサファイア基板等のような基板に対して、とりわけ、種々な堆積、エッチング及び熱処理を行うように選択的に適応された処理チャンバにおいて製造される。これらの処理は、基板支持体、基板リフトピン、処理キット(例えば、加熱リング、堆積リング、保持リング等)、処理シールド(熱シールド、プラズマシールド等)等の如き処理チャンバの種々な露出された構成部分を徐々に侵食し、消費し、又は汚染してしまうような処理環境(例えば、アグレッシブ化学薬品、プラズマ、副生物等を含む環境)を、しばしば使用し又は発生するものである。
Claims (22)
- 半導体基板を処理するための装置において、
メタルフリー燒結炭化ケイ素材料で製造された1つ以上の構成部分を含む処理キット、
を備える装置。 - 上記処理キットの上記構成部分は、基板支持体、予熱リング、リフトピン及び基板支持ピンのうちの少なくとも1つを含む、請求項1に記載の装置。
- 上記処理キットの上記構成部分は、予熱リングを含む、請求項1に記載の装置。
- チャンバ本体を更に備え、
上記処理キットは、上記チャンバ本体に配設される少なくとも基板支持体を備え、上記基板支持体は、メタルフリー燒結炭化ケイ素で製造される、請求項1に記載の装置。 - リアクタは、堆積処理、エッチング処理、プラズマ堆積及び/又はエッチング処理、及び熱処理のうちの少なくとも1つを行うように適応される、請求項4に記載の装置。
- リアクタは、化学気相堆積処理、急速加熱処理、又はエピタキシャルシリコン堆積処理のうちの少なくとも1つを行うように適応される、請求項4に記載の装置。
- 上記基板支持体は、更に、そこに置かれる基板の表面上に所定の温度分布を達成するように機械加工された凹状上方表面を備える、請求項4に記載の装置。
- 上記凹状上方表面は、上記凹状上方表面の中央領域に第1の粗さを、及び上記凹状上方表面の周辺領域に第2の粗さを有する、請求項7に記載の装置。
- 上記第1の粗さは、約0.2μmから8μmであり、上記第2の粗さは、約8μmから20μmである、請求項8に記載の装置。
- 上記基板支持体は、更に、そこに置かれる基板の周辺縁部に接触するように適応された基板座面を備える、請求項4に記載の装置。
- 上記基板支持体は、更に、複数の基板リフトピンを収容するように適応された複数の開口を備え、上記複数の開口のリフトピン係合表面は、約0.2μmから5μmの粗さまで研磨される、請求項4に記載の装置。
- メタルフリー燒結炭化ケイ素で製造された複数のリフトピンを更に備える、請求項4に記載の装置。
- 上記リフトピンの基板係合表面は、約0.2μmから5μmの粗さまで研磨される、請求項12に記載の装置。
- 上記基板支持体は、複数の基板支持ピンによって支持され、上記複数の基板支持ピンのうちの少なくとも1つは、メタルフリー燒結炭化ケイ素で製造される、請求項4に記載の装置。
- 上記チャンバ本体に配設され上記基板支持体を取り囲むガス予熱リングを更に備え、上記ガス予熱リングはメタルフリー燒結炭化ケイ素で製造される、請求項4に記載の装置。
- 上記基板支持体は、更に、そこを通して形成され基板支持領域に配設された1つ以上の開口を備える、請求項4に記載の装置。
- 上記開口は、上記基板支持体に半径方向に配置される、請求項16に記載の装置。
- 上記開口は、上記基板支持体の表面に亘って約5パーセントから15パーセントのパーセント開口領域を与える、請求項16に記載の装置。
- 上記基板支持体は、所定の厚み変化プロフィールを有する、請求項4に記載の装置。
- 上記基板支持体の上方表面と上記基板支持体上に置かれるときの基板の裏側に対応する位置との間に画成されるギャップを更に備える、請求項4に記載の装置。
- 上記ギャップは、所定の変化プロフィールを有する、請求項20に記載の装置。
- 上記ギャップの上記プロフィールは、約0.012インチだけ変化する、請求項20に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/258,345 US20070089836A1 (en) | 2005-10-24 | 2005-10-24 | Semiconductor process chamber |
PCT/US2006/039914 WO2007050309A1 (en) | 2005-10-24 | 2006-10-12 | Semiconductor process chamber |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009513027A true JP2009513027A (ja) | 2009-03-26 |
JP2009513027A5 JP2009513027A5 (ja) | 2009-11-26 |
Family
ID=37968117
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008537749A Pending JP2009513027A (ja) | 2005-10-24 | 2006-10-12 | 半導体処理チャンバ |
Country Status (7)
Country | Link |
---|---|
US (1) | US20070089836A1 (ja) |
EP (1) | EP1940560A4 (ja) |
JP (1) | JP2009513027A (ja) |
KR (2) | KR20110046579A (ja) |
CN (1) | CN1956145B (ja) |
TW (1) | TWI382450B (ja) |
WO (1) | WO2007050309A1 (ja) |
Cited By (3)
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WO2016194291A1 (ja) * | 2015-05-29 | 2016-12-08 | 株式会社Sumco | エピタキシャル成長装置、エピタキシャルウェーハの製造方法およびエピタキシャル成長装置用リフトピン |
JP2019169701A (ja) * | 2018-01-25 | 2019-10-03 | アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ | ハイブリッドリフトピン |
JP2020188129A (ja) * | 2019-05-14 | 2020-11-19 | 東京エレクトロン株式会社 | 載置台および基板処理装置 |
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EP4335951A1 (de) | 2022-09-08 | 2024-03-13 | Siltronic AG | Suszeptor mit austauschbaren auflageelementen |
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JP2016225444A (ja) * | 2015-05-29 | 2016-12-28 | 株式会社Sumco | エピタキシャル成長装置、エピタキシャルウェーハの製造方法およびエピタキシャル成長装置用リフトピン |
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JP7329960B2 (ja) | 2019-05-14 | 2023-08-21 | 東京エレクトロン株式会社 | 載置台およびプラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI382450B (zh) | 2013-01-11 |
TW200717593A (en) | 2007-05-01 |
EP1940560A1 (en) | 2008-07-09 |
WO2007050309A1 (en) | 2007-05-03 |
KR20110046579A (ko) | 2011-05-04 |
EP1940560A4 (en) | 2010-09-15 |
CN1956145A (zh) | 2007-05-02 |
US20070089836A1 (en) | 2007-04-26 |
KR20080071148A (ko) | 2008-08-01 |
CN1956145B (zh) | 2013-09-11 |
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