TW202106120A - 自由基輔助引燃電漿系統和方法 - Google Patents

自由基輔助引燃電漿系統和方法 Download PDF

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TW202106120A
TW202106120A TW109123305A TW109123305A TW202106120A TW 202106120 A TW202106120 A TW 202106120A TW 109123305 A TW109123305 A TW 109123305A TW 109123305 A TW109123305 A TW 109123305A TW 202106120 A TW202106120 A TW 202106120A
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activated species
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関口博夫
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荷蘭商Ａｓｍ Ｉｐ私人控股有限公司
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Abstract

本發明揭露電漿輔助之方法和設備。所述方法和設備可用於將在遠程電漿單元中形成的活化物種提供至反應室，以輔助引燃耦接至該遠程電漿單元的反應室內的電漿。

Description

自由基輔助引燃電漿系統和方法
本發明大體上有關形成裝置結構之方法及用於形成所述結構之系統。更特別是，本發明係有關使用電漿形成裝置之方法及具有電漿反應器之系統。
在電子裝置的製造過程中，可藉由圖案化基材的表面及使用例如電漿輔助蝕刻製程從基材表面蝕刻材料，以在基材的表面上形成部件的精細圖案。隨著基材上的裝置密度增加，越來越想要形成具有較小尺寸的部件。
光阻劑時常用於蝕刻前的基材表面圖案化。通過將一光阻劑層施加於基材表面、光阻劑表面光罩處理、使光阻劑的未遮罩部分暴露於輻射(諸如紫外線或電子束)、及去除一部分光阻劑(例如，未遮罩或遮罩部分)，同時將一部分光阻劑留在基材表面上，可在光阻劑中形成圖案。
在去除步驟之後，過量的殘留光阻劑可能殘留在一光阻劑部件的底部或最低部。此過量的光阻劑可能導致與想要圖案的偏差，其在隨後的蝕刻製程過程中從所述光阻劑轉移至一基層。
近來，藉由使用空間層已形成具有超出通常僅使用光阻劑所能達到解析度的圖案；此技術包括空間層定義的雙重圖案化(Spacer-defined Double Patterning，SDDP)製程。在SDDP製程中，部件(feature)圖案使用光阻劑或旋塗碳(Spin-on Carbon，SOC)形成為芯材(core material)，其尺寸可符合例如光阻劑製程的解析度極限或接近解析度極限。然後在芯材的側壁上形成側壁空間層。此後，在維持側壁空間層的同時去除芯材，並且將剩餘的側壁空間層用作供蝕刻基層的光罩。利用該技術，因為介於所述空間層之間的距離可小於犧牲膜(諸如光阻劑)的寬度，使得可在該基層中形成精細的圖案，其寬度較窄於光阻劑製程的解析度極限。
為了精確控制使用圖案化芯材(諸如光阻劑)形成部件的臨界尺寸(Critical Dimension，CD)，需要控制芯材的尺寸。例如，使用電漿處理的修整技術可用於去除一部分芯材，諸如部件最低部的過剩材料。
通常，在修整製程中，在反應室內產生電漿。由於電漿相對容易引燃，因此氬氣時常用於引燃所述反應室內的電漿。用於引燃電漿的功率可取決於數個因素，諸如用於形成電漿的氣體類型、所述反應室內的壓力、介於所述反應室內的電極之間的間隔等。因此，通常想要嘗試針對每個修整條件來調整所述電漿引燃功率。
不幸的是，一些條件可包括相對高功率來引燃電漿。在電漿引燃步驟中，高功率條件可能造成芯材的意外損壞。此外，由於電漿引燃依賴於其他因素，使得典型的電漿引燃製程可能相對不穩定且不通用。因此，需要用於引燃電漿及/或用於修整芯材的改善方法和系統。
本揭露提出之任何問題及解決方案討論僅為了提供本發明背景之目的而包括在本發明中，且不應視為承認在完成本發明時已知討論之任何或全部內容。
本發明的各種實施例係有關電漿輔助之方法和設備。雖然在下文更詳細地討論本發明之各種實施例解決先前方法及系統之缺點的方式，但大致上，本發明之各種實施例提供可用於引燃反應室內的電漿之改善方法。本說明書所述的各種技術提供用於引燃反應室內的電漿之可靠方法及/或用於減少基材表面材料(例如，圖案化的材料，諸如光阻劑)的損害之方法。
根據本發明的至少一實施例，一方法(例如，在基材上形成圖案化部件(feature)之方法)包括在基材上形成圖案化部件。例示性方法可包括下列步驟：在一反應室內提供基材；使用一遠程電漿單元，形成第一活化物種；在一第一時間間隔內將所述第一活化物種提供至該反應室；及在開始將所述第一活化物種提供至該反應室的步驟之後，在一第二時間間隔內在該反應室內形成第二活化物種。所述第一時間間隔和所述第二時間間隔可重疊，使得所述第一活化物種有助於引燃用於形成所述第二活化物種的電漿。該基材可包括例如由含碳材料形成的部件，諸如光阻劑、旋塗碳(SOC)材料和碳硬質光罩(Carbon Hard Mask，CHM)材料之一或多者。所述第二活化物種可用於修整(trim)部件。形成所述第二反應物種的步驟可包括對該反應室提供一含氧氣體。該含氧氣體可包括例如選自含有O2 、CO2 及N2 O的群組之一或多個氣體。一惰性氣體(諸如氬氣)可供應至該遠程電漿單元，以形成所述第一活化物種。所述含氧氣體可不供應至該遠程電漿單元。一第一氣體可提供至該遠程電漿單元以形成所述第一活化物種。一第二氣體可提供至該反應室以形成所述第二活化物種。所述第一氣體和所述第二氣體可不同。
根據本發明再進一步的例示性實施例，提供修整基材上部件的方法。修整基材上部件的方法可包括：在一反應室內提供基材；使用一遠程電漿單元，形成第一活化物種；在一第一時間間隔內將所述第一活化物種提供至該反應室；在開始將所述第一活化物種提供至該反應室的步驟之後，在一第二時間間隔在該反應室內形成第二活化物種；及使用所述第二活化物種修整所述部件。所述第一時間間隔和所述第二時間間隔可重疊，使得所述第一活化物種有助於引燃用於形成所述第二活化物種的電漿。該等部件可由例如含碳材料形成，諸如光阻劑、旋塗碳(SOC)材料和碳硬質光罩(CHM)材料之一或多者。形成所述第二反應物種的步驟可包括對該反應室提供一含氧氣體。該含氧氣體可包括例如選自含有O2 、CO2 及N2 O的群組之一或多個氣體。一惰性氣體(諸如氬氣)可供應至該遠程電漿單元，以形成所述第一(例如，氬氣)活化物種。所述含氧氣體可不供應至該遠程電漿單元。
根據本發明之再更進一步的例示性實施例，提供一種配置成執行如本說明書所述方法的沉積設備。
根據本發明之再更進一步的例示性實施例，一種結構包含根據本文所述方法形成的一層。
所屬技術領域中具有通常知識者將從已參照隨附圖式之一些實施例的下列詳細實施方式輕易明白這些及其他實施例；本發明並未受限於任何已揭示的（多個）特定實施例。
雖然在下文揭示一些實施例及實例，所屬技術領域中具有通常知識者將了解本發明延伸超出本發明及其明顯的修改與等同物之具體揭示的實施例及/或用途。因此，意圖是，所揭露的本發明範疇不應受限於以下描述的特定揭露實施例。
本發明大體上有關電漿輔助之方法和設備。如下面更詳細描述，例示性方法可用來促成反應室內的電漿引燃；減少基材表面材料損壞，例如在電漿引燃製程期間；改善整個基材表面上的材料去除率均勻性等等。本說明書所述的方法和設備可用於修整基材表面上的部件。
在本發明中，「氣體(gas)」可包括在室溫及壓力下為氣體、汽化(vaporized)固體、及/或汽化液體之材料，並可取決於上下文由單一氣體或氣體混合物構成。除了製程氣體以外的氣體（亦即，非通過氣體分配總成（諸如氣體噴灑頭）、其他氣體分配設備、或類似者所引入的氣體）可用於例如密封反應空間，且可包括一諸如稀有氣體的密封氣體。術語「惰性氣體(inert gas)」係指當施加RF功率時未參與化學反應的氣體、及/或激發前驅物的氣體。
如本文所使用，用語「基材(substrate)」可指可用以形成或在其上可形成設備、電路、或膜之任何（多個）下伏材料。基材可包括塊材（諸如矽（例如單晶矽））、其他IV族材料（諸如鍺）、或化合物半導體材料（諸如GaAs），並可包括上覆或下伏於塊材的一或多層。此外，所述基材可包括形成在一基材層的至少一部分之內或之上的各種部件，諸如凹部、線條等。根據本發明的例示性態樣，一或多個部件由一含碳材料形成，諸如光阻劑、旋塗碳(SOC)材料、和碳硬質光罩(CHM)材料之一或多者。該等部件可形成於一底層、一黏附層或薄膜等上。
在一些實施例中，「薄膜(film)」是指在垂直於厚度方向的方向上延伸以覆蓋整個目標或相關表面的一層，或者僅是覆蓋目標或相關表面的一層。在一些實施例中，「層(layer)」係指形成於表面上之具有特定厚度之結構或者膜或非膜結構之同義詞。膜或層可由具有一些特性之離散單一膜或層或者由多個膜或層構成，且相鄰膜或層之間的邊界可或可不明確，且可或可不基於物理、化學、及/或任何其他特性、形成製程或序列、及/或相鄰膜或層之功能或用途而建立。
此外，在本發明中，一變量的任何兩數字可構成該變量的可行範圍，且所示的任何範圍可包括或排除端點。此外，所指示的變數之任何數值（不管該等數值是否以「約(about)」來指示）可指精確值或近似值並包括等效值，且在一些實施例中可指平均值、中值、代表值、多數值等。進一步地，在本發明中，於一些實施例中，用詞「包括(including)」、「由…構成(constituted by)」和「具有(having)」僅指「通常或廣泛包含(typically or broadly comprising)」、「包含(comprising)」、「本質由…組成(consisting essentially of)」、或「由…組成(consisting of)」。在本發明中，於一些實施例中，任何已定義之意義未必排除尋常及慣例意義。
在本發明中，於一些實施例中，「連續地(continuously)」可指不中斷真空、在時間線上無中斷、無任何材料插入步驟、未改變處理條件、其後立即、作為下一步驟、或在兩結構間無有別於該兩結構之插入的離散物理或化學結構。
現參考圖式，圖1示意說明一用於修整製程的習知時序100。時序100包括下列步驟：開始(步驟101)、頂起該承載盤(susceptor，SUS)(步驟102)、將氣體引入一反應室(步驟103)、設定壓力(步驟104)、穩定氣體(步驟105)、引燃電漿(步驟106)、提供RF功率(步驟107)、提供反應氣體(步驟108)、執行修整(步驟109)、吹掃(purging)該反應室(步驟110)、及降低該反應室內的壓力(步驟111)。
在步驟101，一基材可裝載到反應室內的一承載盤上。一旦基材裝載到該承載盤上，一閘閥(gate valve，GV)就可關閉且該承載盤可移到一操作位置(步驟102)。
在步驟103，一惰性氣體(諸如氬氣)可引入該反應室。在步驟104，壓力可允許升高到一想要的工作壓力，且惰性氣體的流量可設定為一想要的位準。此外，一稀有氣體(諸如氦氣)可供應至一含有反應室的反應器，以在反應空間和一反應器的另一部分(諸如一裝載/卸載空間)之間提供氣簾。氣體流量和該反應室內的壓力可允許穩定一段時間(步驟105)。
在步驟106，引燃該反應室內的電漿。在此期間，一相對高射頻(RF)功率(例如，約90-130 W)可施加到例如該反應室內的平行板以撞擊電漿。然後，在步驟107，功率減小到一製程或工作位準。在步驟108，一反應氣體(氧氣)和多餘或稀釋的氣體(例如，氮氣)提供至該反應室。在步驟109，使用活化的反應物物種修整部件。在步驟110，關閉電漿產生器電源，並吹掃該反應室。然後在步驟111降低該反應室內的壓力。
如圖1所示，在步驟106，在修整製程期間，供應至該反應室以引燃電漿的功率相較於提供至反應室的功率位準係相對較高。所述相對高功率可能導致部件及/或在層或薄膜上形成部件的層或薄膜之損壞。此外，所述相對高功率可能導致修整製程中的晶圓內部不均勻性及/或修製程之後的部件高度係相對較高。如下所述，特別是在一電漿引燃步驟中，本發明的實施例提供減輕功率需求、改善電漿引燃、改善電漿穩定性、與減少部件及/或層損壞的改善設備和方法。
圖2和圖3示意說明根據本發明的例示性實施之一反應器系統200。反應器系統200包括一反應器202，該反應器包括一反應室204、一承載盤206、一氣體分配裝置208、一閘閥210、和一遠程電漿單元(RPU) 212。圖2示意說明閘閥210處於關閉位置時的反應器系統200，且圖3示意說明閘閥210處於打開位置時的反應器系統200。
反應器202可包括任何適當的反應器。舉例來說，一具有適合用作反應器202的反應器之反應器系統可從ASM International N.V.公司獲得。
承載盤206能夠垂直移動以裝載及卸載基材214。多個頂針和一機械臂(未示出)可用於從承載盤206的表面裝載及卸載所述基材。承載盤206亦可形成一用於在反應室204內形成直接式電漿的電極。
氣體分配裝置208可包括例如一噴灑氣體分配裝置。此外，氣體分配裝置208可形成一用於在反應室204內形成直接式電漿的電極。
閘閥210可用於控制RPU 212和反應室204之間的活化物種的通量。閘閥210可在一直接式電漿引燃步驟期間打開，且可在一製程(例如，修整)步驟期間打開或關閉。
RPU 212可包括任何適當的遠程電漿單元。根據本發明的實例，RPU 212耦接到一惰性氣體源216，使得來自所述惰性氣體源的惰性氣體可供應至RPU 212，且RPU 212可從所述惰性氣體產生活化物種。適當的惰性氣體實例包括氬氣。一用於產生所述遠程電漿的功率可為適合於產生電漿的任何功率。
圖4示意說明根據本發明的例示性實施例之例示性時序400。時序400可用於執行如本說明書所述的各種方法，包括如本說明書所述在基材上形成圖案化部件的方法和修整基材上的部件之方法。系統200可用於執行如本說明書所述的時序及/或方法。
時序400包括下列步驟：開始(步驟401)、頂起該承載盤(步驟402)、將氣體引入一反應室(步驟403)、設定壓力(步驟404)、穩定氣流(步驟405)、遠程產生活化物種(步驟406)、針對直接式電漿提供RF功率和修整(步驟407)、吹掃該反應室(步驟408)、及降低該反應室內的壓力(步驟409)。
類似於步驟101，在步驟401，一基材可裝載到一反應室內的承載盤上。一旦所述基材裝載到該承載盤上，就可關閉一反應室閘閥且該承載盤可移到一操作位置(步驟402)。
在步驟403，一諸如氬氣的惰性氣體可引入RPU (諸如RPU 212)中。此外，一諸如稀釋氣體(諸如，氮氣或氬氣，標示為「額外氣體」)的氣體是一反應物，諸如O2 、CO2 及N2 O之一或多者，且一惰性氣體(RC惰性)可供應至一反應室，例如反應室204。
在步驟404，壓力允許升高到想要的工作壓力，且氣體到反應室的流量和氣體到RPU的流量可設置到想要的位準。在步驟404，一稀有氣體(諸如氦氣)亦可供應至一反應器，以例如在一反應空間和一反應器的另一部分(諸如該反應器的一裝載/卸載部分)之間提供氣簾。反應室及/或RPU內的氣體流量和壓力允許穩定一段時間(步驟405)。
在步驟406，將電源提供至RPU及/或將來自RPU的活化物種引入一反應室中。來自RPU的所述(例如，第一)活化物種提供至該反應室，以能在沒有來自RPU的活化物種的輔助之下，促成在較低功率及/或採取一更穩定方式來引燃在該反應室內的直接式電漿。在一些情況，RPU可一直啟動，且可通過打開在RPU和該反應室之間的一閘閥而將活化物種提供至一反應室。或者，如圖所示，RPU可僅在步驟406或在步驟407中啟動。
在步驟407，在該反應室內進行諸如修整製程之製程。在此步驟中，將電源供應至電極(例如，氣體分配裝置208及/或承載盤206 (如果電源僅供應至一電極，則另一電極可接地))，以在該反應室內形成第二活化物種。在步驟407，用於引燃該反應室內的直接式電漿的功率可約相同於在步驟407中用於維持電漿的功率 (例如，在約10%內)。
在步驟408，關閉用於直接式電漿的電漿產生器的電源，並且可選擇性，關閉用於RPU的電源，並且吹掃該反應室。如圖4所示，可通過使一或多個RPU惰性氣體流入RPU、及/或以任何組合使含有反應物、額外氣體、反應室(RC)惰性氣體之一或多者的氣體流入該反應室以吹掃反應室。然後，可在步驟409中降低該反應室內的壓力。下表1示意說明步驟406和407的例示性製程條件。
下表1示意說明步驟406和407的例示性製程條件。 表1
步驟406和407的多個條件
壓力 200-600帕(Pa)
基材溫度 75-100°C
RPU惰性氣體 氬氣(Ar)
流量RPU惰性氣體 0.5-10.0slm
反應物流量 0.2-6.0slm
額外氣體流量 氮(N2 )、氬氣(Ar) 0.0-6.0slm
反應室惰性氣體流量 0.5slm
密封氣體流量 0.2-2.0slm
修整過程中的反應室壓力 200-600 帕(Pa)
RPU電源 適用於產生遠程電漿
直接式電漿功率 20-60瓦特(W)
電極間距離 7.5-15.0毫米(mm)
步驟406的持續時間 0.5-2.0秒(sec)
步驟407的持續時間 變量
上述用於300-mm晶圓(wafer)的功率可轉換為W/cm2 (晶圓每單位面積的瓦特數)，其可應用於具有不同直徑(諸如200 mm或450 mm)的晶圓。基材溫度可認為是在製程期間反應空間的溫度。
圖5示意說明在相較於不包括自由基輔助引燃的習知方法之下的例示性方法優點。圖5所示的結果示意說明20次引燃測試的引燃測試結果。RAI表示使用自由基輔助引燃(RAI)的測試運行，而沒有RAI表示沒有RAI輔助的測試運行。如圖所示，自由基輔助引燃的使用明顯減少錯誤引燃(mis-ignitions)的次數(例如，未形成電漿)、減少或消除引燃延遲(ignition delays)(例如，引燃延遲大於或等於0.1秒)、及/或針對前面表1所列多個條件提供良好的引燃(good ignition)(電漿形式)。
圖6和圖7示意說明本說明書所述方法用於修整基材表面部件(諸如光阻劑部件)的結果。如圖6所示，使用如本說明書所述方法可明顯減少在沒有反應物下的部件(例如，光阻劑)損壞(蝕刻)量。圖7示意說明使用本說明書所述方法可明顯減小在沒有反應物下的部件損壞的晶圓均勻性內的一σ (sigma)標準偏差(standard deviation)。
圖8示意說明引燃延遲，其定義為超過0.1秒的延遲時間。在沒有RAI，引燃延遲頻率約為100%。然而，在有RAI，根據本發明的實例，例如，使用表1中列出的多個條件，所述引燃延遲為零或約零百分比。
圖9示意說明引燃的功率通常隨著一反應室內的壓力而增加，直至達到約360 Pa的壓力。在示意說明的實例中，表1中針對多個條件列出在約20 W下的多個功率飽和。
上文所述之本發明之實例實施例並未限制本發明的範疇，因為這些實施例僅為本發明之實施例之實例。任何等效實施例係意欲屬於本發明之範疇內。實際上，除本文中所示及所述者之實施例外，所屬技術領域中具有通常知識者可由本說明書明白本發明之各種修改（諸如所述元件之替代有用組合）。此類修改及實施例亦意欲落在隨附之申請專利範圍的範疇內。
100,400:時序 101~111,401~409:步驟 200:反應器系統 202:反應器 204:反應室 206:承載盤 208:氣體分配裝置 210:閘閥 212:遠程電漿單元 214:基材 216:惰性氣體源
當結合下列說明圖式考慮時，可藉由參照實施方式及申請專利範圍而得到對本發明之例示性實施例的更完整了解。 圖1繪示一時序圖。 圖2和圖3繪示根據本發明之至少一實施例的反應器系統。 圖4繪示根據本發明之至少一實施例的時序圖。 圖5繪示使用根據本發明之至少一實施例的方法之引燃測試結果。 圖6和圖7繪示根據本發明之至少一實施例的方法與另一製程之間的光阻劑損害的比較。 圖8繪示引燃延遲。 圖9繪示引燃功率與反應室內的壓力之關係。 將理解，圖式中之元件係為了簡單及清楚起見而繪示且未必按比例繪製。舉例而言，附圖中一些元件之尺寸可相對於其他元件而放大，以幫助提昇對本揭示內容所說明之實施例的理解。

Claims (20)

  1. 一種在基材上形成圖案化部件之方法，該方法包含下列步驟： 在一反應室內提供該基材； 使用一遠程電漿單元，形成一第一活化物種； 在一第一時間間隔內將該第一活化物種提供至該反應室；及 在開始將該第一活化物種提供至該反應室的步驟之後，在一第二時間間隔內在該反應室內形成一第二活化物種， 其中該第一時間間隔和該第二時間間隔重疊。
  2. 如請求項1所述之方法，其更包含將氬氣提供至該遠程電漿單元的步驟。
  3. 如請求項1所述之方法，其中該基材包含多個部件。
  4. 如請求項3所述之方法，其更包含使用該第二活化物種以修整該等部件的步驟。
  5. 如請求項4所述之方法，其中該等部件包含碳。
  6. 如請求項5所述之方法，其中該等部件包含光阻劑、旋塗碳(SOC)材料、和碳硬質光罩(CHM)材料之一或多者。
  7. 如請求項1所述之方法，其中該第二反應性物種係使用一直接式電漿形成。
  8. 如請求項1所述之方法，其中用於形成該第二反應物種的步驟包含對該反應室提供一含氧氣體。
  9. 如請求項8所述之方法，其中該含氧氣體包含選自含有O2 、CO2 及N2 O的群組之一或多個氣體。
  10. 如請求項8所述之方法，其中該含氧氣體未供應至該遠程電漿單元。
  11. 一種修整基材上的部件之方法，該方法包含下列步驟： 在一反應室內提供該基材； 使用一遠程電漿單元，形成一第一活化物種； 在一第一時間間隔內將該第一活化物種提供至該反應室； 在開始將該第一活化物種提供至該反應室的步驟之後，在一第二時間間隔在該反應室內形成一第二活化物種，其中該第一時間間隔和該第二時間間隔係重疊；及 使用該第二活化物種以修整該等部件。
  12. 如請求項11所述之方法，其中一第一氣體提供至該遠程電漿單元以形成該第一活化物種，一第二氣體提供至該反應室以形成該第二活化物種，而且其中該第一氣體和該第二氣體是不同。
  13. 如請求項11所述之方法，其中該等部件包含碳。
  14. 如請求項11所述之方法，其中該等部件包含光阻劑、旋塗碳(SOC)材料、和碳硬質光罩(CHM)材料之一或多者。
  15. 如請求項11所述之方法，其中形成第二活化物種的步驟包含對該反應室提供一含氧氣體。
  16. 如請求項15所述之方法，其中該含氧氣體包含選自含有O2 、CO2 及N2 O的群組之一或多個氣體。
  17. 如請求項15所述之方法，其中該含氧氣體未供應至該遠程電漿單元。
  18. 如請求項11所述之方法，其中在形成該第二活化物種的步驟期間，該反應室內的壓力介於約200 Pa與約600 Pa之間。
  19. 如請求項11所述之方法，其中該第一活化物種包含氬氣活化物種。
  20. 一種系統，配置成為執行請求項1-19中任一項所述之方法。
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