TWI576914B - Pattern forming method and substrate processing system - Google Patents
Pattern forming method and substrate processing system Download PDFInfo
- Publication number
- TWI576914B TWI576914B TW102124645A TW102124645A TWI576914B TW I576914 B TWI576914 B TW I576914B TW 102124645 A TW102124645 A TW 102124645A TW 102124645 A TW102124645 A TW 102124645A TW I576914 B TWI576914 B TW I576914B
- Authority
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- Taiwan
- Prior art keywords
- gas
- film
- etching
- predetermined pattern
- ruthenium
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 173
- 238000012545 processing Methods 0.000 title claims description 85
- 239000000758 substrate Substances 0.000 title claims description 32
- 239000007789 gas Substances 0.000 claims description 167
- 230000008569 process Effects 0.000 claims description 130
- 238000005530 etching Methods 0.000 claims description 89
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 27
- 239000002243 precursor Substances 0.000 claims description 27
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 27
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 25
- 229910052707 ruthenium Inorganic materials 0.000 claims description 21
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 10
- 238000011010 flushing procedure Methods 0.000 claims description 10
- 238000001179 sorption measurement Methods 0.000 claims description 10
- 238000009832 plasma treatment Methods 0.000 claims description 7
- 238000005121 nitriding Methods 0.000 claims description 6
- 230000000994 depressogenic effect Effects 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 150000003304 ruthenium compounds Chemical class 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 43
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 38
- 238000000231 atomic layer deposition Methods 0.000 description 29
- 238000012546 transfer Methods 0.000 description 20
- 229910052786 argon Inorganic materials 0.000 description 19
- 239000011148 porous material Substances 0.000 description 12
- 230000008439 repair process Effects 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 229910001873 dinitrogen Inorganic materials 0.000 description 8
- 229910052732 germanium Inorganic materials 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- 239000003507 refrigerant Substances 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 125000004122 cyclic group Chemical group 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- -1 ruthenium nitride Chemical class 0.000 description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- GCZWJRLXIPVNLU-UHFFFAOYSA-N 2,2-dimethoxy-3-methylundecane Chemical compound CC(C(OC)(OC)C)CCCCCCCC GCZWJRLXIPVNLU-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000004431 deuterium atom Chemical group 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- LGPPATCNSOSOQH-UHFFFAOYSA-N 1,1,2,3,4,4-hexafluorobuta-1,3-diene Chemical compound FC(F)=C(F)C(F)=C(F)F LGPPATCNSOSOQH-UHFFFAOYSA-N 0.000 description 1
- YTPFRRRNIYVFFE-UHFFFAOYSA-N 2,2,3,3,5,5-hexamethyl-1,4-dioxane Chemical compound CC1(C)COC(C)(C)C(C)(C)O1 YTPFRRRNIYVFFE-UHFFFAOYSA-N 0.000 description 1
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical compound CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
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Description
本發明係關於一種圖案形成方法及基板處理系統。
當具有高的高寬比之深孔(接觸孔)以電漿來蝕刻之情況,隨著孔底變深,電漿自由基到達孔底之量會減少,蝕刻速率會下降。
一旦於深度方向之蝕刻速率降低,則會發生孔下方之直徑較孔上部之直徑來得大之弓形化形狀(參見圖2(b))。此外,蝕刻中不光是孔底、連孔之側壁也受到蝕刻,使得孔上部之直徑亦即CD值(Critical Dimension)變大造成高寬比降低,而變得無法得到所希望之半導體元件特性。
另一方面,於膜之成膜上有各種方法,例如於專利文獻1揭示了一種技術,係藉由原子層沉積法ALD(Atomic Layer Deposition)而於元件上形成緻密的介電質層以保護元件。
先前技術文獻
專利文獻1 日本特表2011-526078號公報
但是,於專利文獻1,並未設想到基於修復因蝕刻所形成之圖案形狀的目的而進行成膜處理。從而,專利文獻1並無法得到將因蝕刻所形成之圖案形狀加以修復之效果。
是以,本發明有鑑於上述課題,其目的在於提供一種圖案形成方法以及基板處理系統,可良好地形成基板上之凹陷圖案。
為了解決上述課題,依據本發明之某觀點係提供一種圖案形成方法,係包含有:
蝕刻製程,係藉由從含氟化碳(CF)系氣體之蝕刻氣體所生成的電漿而經由罩體對於基板上之含矽膜進行蝕刻,而於該含矽膜形成既定圖案之凹陷;以及成膜製程,係使用矽化合物氣體使得吸附於該既定圖案之凹陷表面之層藉由氧化性氣體或是氮化性氣體所生成之電漿來被氧化或是氮化,而於該既定圖案之凹陷表面形成矽氧化膜或是矽氮化膜。
如以上說明般,依據本發明,可良好地形成基板上之凹陷圖案。
1‧‧‧蝕刻裝置
2‧‧‧成膜裝置
3,4‧‧‧處理裝置
25‧‧‧基板
26‧‧‧矽氧化膜
27‧‧‧矽氮化膜
28‧‧‧多晶矽罩體
29‧‧‧修復膜
30‧‧‧含矽膜
200‧‧‧基板處理系統
圖1係顯示孔之蝕刻深度與蝕刻速率關係之圖。
圖2係用以說明孔之高寬比與弓形化形狀之圖。
圖3係用以說明第1以及第2實施形態之圖案形成方法之圖。
圖4係顯示第1實施形態之圖案形成處理之流程圖。
圖5係顯示第1實施形態之ALD處理之流程圖。
圖6係顯示第1實施形態之有無ALD處理與孔形狀之圖。
圖7係顯示第1實施形態之有無ALD處理與孔形狀之各種測定值之圖。
圖8係顯示第2實施形態之圖案形成處理之流程圖。
圖9係第1以及第2實施形態之基板處理系統之構成圖。
圖10係第1以及第2實施形態之蝕刻裝置之構成圖。
圖11係第1以及第2實施形態之成膜裝置之構成圖。
以下,參見所附圖式,針對本發明之實施形態來說明。再者,於本說明書以及圖式中,針對實質具有同一機能構成之構成要素,係賦予同一符號而省略重複說明。
〔起始〕
當具有高的高寬比(Aspect Ratio:AR)之接觸孔(孔)以電漿來蝕刻之情況,隨著孔底變深,電漿自由基到達孔底之量會減少,蝕刻速率會變低。針對此現象,參見圖1以及圖2來說明。圖1係顯示接觸孔之蝕刻深度與
蝕刻速率之關係之圖。圖2係用以說明接觸孔之高寬比定義以及弓形化形狀之圖。
到目前為止,所需接觸孔之高寬比為50程度。高寬比如圖2(a)所示般,係以孔之深度h相對於孔之開口部直徑φ(頂部CD)來表示。例如,孔之直徑φ為40nm、孔之深度h為2μm時之高寬比成為50。
近年來,伴隨更微細的加工,乃要求形成孔之直徑φ為20nm程度之細孔。例如,當孔之直徑φ為20nm、孔之深度h為2μm時之高寬比成為100。
但是,隨著蝕刻孔變深,蝕刻速率會降低。蝕刻速率乃每單位時間所能削除之量。例如,圖1(a)中顯示了以蝕刻於矽氧化膜(SiO2)形成孔之際,孔形狀因應於蝕刻時間之截面。此實驗中,係於平行平板電漿中採用了下部2頻率施加之平行平板蝕刻裝置(參見圖10)。蝕刻之程序條件為:壓力為2.66Pa、電漿生成用之高頻電力HF的頻率為60MHz、功率為1200W、離子拉引用之高頻電力LF之頻率為400kHz、功率為4500W、氣體種為C4F6/C4F8/Ar/O2之混合氣體。以此條件並以多晶矽為罩體來蝕刻矽氧化膜。圖1(a)中從左邊起顯示了蝕刻時間60s、180s‧‧‧600s時之孔之截面形狀、孔之直徑φ、高寬比AR之數值。依據實驗結果,隨著蝕刻之深度h變深,孔之直徑φ會變大,高寬比AR出現變動。
圖1(b)中針對蝕刻深度(縱軸)相對於蝕刻時間ET(橫軸)係顯示了矽氧化膜受蝕刻之孔之深度與蝕刻矽氧化膜之際形成有圖案之多晶矽罩體的殘餘量。圖1(c)中,針對蝕刻速率(縱軸)相對於蝕刻時間ET(橫軸)係顯示了矽氧化膜之蝕刻速率與罩體之蝕刻速率。
依據圖1(b)以及圖1(c)可知,蝕刻時間ET愈長、孔愈深則矽氧化膜之蝕刻速率降低,孔變得難以受到蝕刻。此外,不論蝕刻時間ET為何,罩體之蝕刻速率為大致一定,而多晶矽罩體之減少量為大致一定。
從以上可知,若蝕刻直徑小、深的孔,則在深度方向之蝕刻速率會降低,於深度方向上發生孔之中間部之直徑(弓形化CD)比孔之上部之直徑(頂部CD)來得大之弓形化形狀(參見圖2(b))。
此外,蝕刻中孔之側壁受到蝕刻,孔之CD會變廣。從而,將無法形成所希望之高寬比,而無法得到所希望之半導體元件特性。例如,當頂部CD為φ25nm、孔之深度為2.5μm之情況,高寬比成為100(=2.5μm/φ25nm)。
但是,若蝕刻中孔之側壁受到蝕刻,頂部CD變寬成為φ40nm,則高寬比降低至62.5(=2.5μm/φ40nm),而無法得到所希望之半導體元件特性。雖蝕刻罩體係說明了使用多晶矽罩體之情況,但亦可為阻劑罩體。
是以,本實施形態之圖案形成方法,於藉由蝕刻所形成之孔之表面係利用ALD法來沉積SiO2。藉此,可對孔之直徑CD之變寬或孔之弓形化形狀進行補修。如此般,本實施形態係提議一種圖案形成方法,係以蝕刻處理後修復蝕刻形狀為目的而進行成膜處理者。
本實施形態之圖案形成方法,係對圖3(a)所示初期狀態之矽氧化膜26以及矽氮化膜27實行蝕刻處理。此處,雖分別蝕刻矽氧化膜26與矽氮化膜27,但蝕刻之膜可僅為矽氧化膜26之構成,亦可僅為矽氮化膜27之構成。此等總稱以下稱為含矽膜30。
蝕刻處理含矽膜30之結果,如圖3(b)所示般形成CD(孔徑φ)變寬之孔形狀。是以,於所形成之孔之表面形成圖3(c)所示修復膜29。藉此來補修孔,使得孔之CD再次變細,藉以改善高寬比。此外,使得孔之側壁形狀成為垂直。圖3中做為一例,顯示了即便相對於孔之直徑φ之設計值25nm(圖3(a)),蝕刻處理時變寬成為40nm之後(圖3(b)),利用ALD以成膜處理再次補修成為25nm之模樣(圖3(c))。以下,以第1實施形態、第2實施形態之順序針對各實施形態之圖案形成方法來詳細說明。
<第1實施形態>
第1實施形態之圖案形成方法,如圖3(a)所示,於矽基板(Si)25上依序積層矽氧化膜(SiO2)26、矽氮化膜(SiN)27、多晶矽罩體28之初期狀態下,進行圖4所示圖案形成處理。圖4係顯示第1實施形態之圖案形成處理之流程圖。再者,於多晶矽罩體28係使用光微影技術來形成直徑φ為25nm之孔圖案。
[圖案形成處理]
(蝕刻處理)
一旦開始圖4所示圖案形成處理,則於步驟S10實行蝕刻處理。此實驗中,於平行平板電漿中使用下部2頻率施加型平行平板蝕刻裝置(參見圖10)。蝕刻之程序條件為:壓力為2.27Pa、電漿生成用高頻電力HF之頻率為60MHz、功率為1500W、離子拉引用高頻電力LF之頻率為400kHz、功
率為7800W、氣體種為C4F6/C3F8/Ar/O2之混合氣體。以此條件經由多晶矽罩體28來蝕刻含矽膜30(矽氮化膜27以及矽氧化膜26)。
(罩體去除處理)
其次,於步驟S12有實行罩體去除處理之情況。此罩體去除處理係在蝕刻處理之罩體為阻劑罩體之情況下實行。
(成膜處理)
其次,於步驟S14以ALD實行成膜處理(ALD處理)。此處,微波電漿裝置(參見圖11)係作為成膜裝置來使用。成膜處理(S14)係如圖5所示般,依序實行步驟S20之氣體吸附製程、步驟S22之第1排氣製程、步驟S24之電漿處理製程、步驟S26之第2排氣製程。
1.氣體吸附製程(步驟S20)
如圖5所示般,氣體吸附製程中,在成膜氣體方面係供給作為前驅體(前驅物)氣體之BTBAS(bis-tertiaryl-buthyl-amino-silane;雙四丁基胺基矽烷)以及氬氣體(Ar)。藉此,於BTBAS所含矽原子被化學吸附於孔之表面。
此氣體吸附製程中程序條件之一例,係將壓力控制在133Pa,BTBAS以30sccm供給,氬氣體(Ar)以540sccm供給。
2.第1排氣製程(步驟S22)
第1排氣製程中係將剩餘吸附之成膜氣體加以去除。具體而言,於第1排氣製程,一邊供給氬氣體(Ar)作為沖洗氣體一邊使用排氣裝置來進行處理容器內之排氣。藉此,可將孔表面所過度化學吸附之矽(Si)加以沖洗(去除)。藉此,於孔之表面形成矽(Si)之原子層。此處所說原子層不限於矽(Si)原子以1原子程度成為層之情況,也包含複數原子程度的層。
此第1排氣製程中之程序條件一例,係將壓力控制在266Pa以上,將氬氣體(Ar)以540sccm供給。
3.電漿處理製程(步驟S24)
電漿處理製程中,係利用微波進行電漿處理。具體而言,於電漿處理製程中,作為反應性氣體之氧氣體(O2)係連同氬氣體(Ar)以電漿處理氣體的形式供給到處理容器內。此外,微波被供給到處理容器內。藉由微波之電場能量,電漿處理氣體受到電離以及解離,藉此生成電漿。所生成之電漿中之氧自由基(O*)會使得於孔表面所吸附之原子層受到氧化。藉此,於孔之
表面形成矽氧化膜(SiO2)。
作為此電漿處理製程中之程序條件之一例,係將壓力控制在133Pa,氧氣體(O2)以60sccm供給,氬氣體(Ar)以540sccm供給。此時,頻率為例如2.45GHz之微波電力係以3kW供給。
再者,即便取代氧氣體(O2),改為含有臭氧(O3)、一氧化二氮(N2O)、氧化氮(N3O)、一氧化碳(CO)、二氧化碳(CO2)或是此等組合等之化合物的氣體,亦可藉由電漿中之氧自由基(O*)而將吸附於孔表面之原子層加以氧化。此等氣體為氧化性氣體之一例。此外,一可取代氬氣體(Ar)改用其他惰性氣體。
4.第2排氣製程(步驟S26)
於第2排氣製程係去除未反應之電漿處理氣體。具體而言,第2排氣製程係和第1排氣製程同樣,一邊供給氬氣體(Ar)作為沖洗氣體一邊使用排氣裝置進行處理容器內之排氣。藉此,未反應之電漿處理氣體受到排氣。
作為此第2排氣製程中程序條件之一例,係和第1排氣製程同樣地將壓力控制在266Pa以上,氬氣體(Ar)以540sccm來供給。
圖5之步驟S28中,以上述1~4之各製程各實行一次的情況作為1個循環,判定是否已實行了預定反覆之循環次數。例如,當欲於孔之側壁單側形成5nm之膜厚的矽氧化膜(SiO2)之情況,5nm除以1循環所能形成之膜厚得到的值成為反覆次數。例如,使得原子層積層30次~40次,形成所希望之膜厚的矽氧化膜。
[實驗結果]
圖6顯示了上述圖案形成方法之實驗結果。圖6左側所示「蝕刻程序」乃以含矽膜30(矽氧化膜26以及矽氮化膜27)作為被蝕刻對象膜,實行了圖4之蝕刻處理(步驟S10)後之孔之截面圖。此時,當取代多晶矽罩體28改用阻劑罩體之情況,亦可實行罩體去除處理(步驟S12)來去除罩體。
圖6右側所示「蝕刻程序+ALD程序」乃經由多晶矽罩體28而以含矽膜30(矽氧化膜26以及矽氮化膜27)為被蝕刻對象膜來實行蝕刻處理(步驟S10)後,利用ALD之成膜處理(步驟S14)來進行孔之補修後的狀態之孔縱截面。於「蝕刻程序+ALD程序」中,顯示了以於孔單側之側壁形成5nm(左側)以及10nm(右側)之膜厚的矽氧化膜為目標而分別反覆上述1~4之製程循
環達既定次數之情況。
關於「蝕刻程序」以及「蝕刻程序+ALD程序」個別之情況,左側之描繪表示形成於膜之孔之全體圖,右側之描繪表示孔之上部放大圖。據此,當進行了ALD之成膜處理的情況,相較於未進行之情況可更為修復孔之弓形化形狀,可更垂直地形成孔之側壁。此外,當利用ALD進行成膜處理之情況,相較於未進行之情況可使得孔之CD更為細化。
表示此實驗結果之各種數值係顯示於圖7。圖7乃顯示測量孔之上部直徑之頂部CD、孔之中間部直徑之弓形化CD、深度h、高寬比Ar(參見圖2(b))之結果。據此,以「蝕刻程序+ALD程序」所得孔之高寬比係較以「蝕刻程序」所得孔之高寬比來得更大。此乃由於藉由ALD處理,孔相對於深度h變細而CD值變小之故。
此外,以「蝕刻程序+ALD程序」所得弓形化CD與頂部CD之差值係較以「蝕刻程序」所得弓形化CD與頂部CD之差值來得小。亦即,ALD處理不僅可使得孔變細,並可改善弓形化形狀,使得孔之壁面更為垂直。
如以上所說明般,依據本實施形態之圖案形成方法,藉由於孔之表面沉積緻密的保形矽氧化膜,可修復孔徑與孔之形狀。此外,可調整沉積於孔之矽氧化膜之厚度。
(成膜處理之變形例)
作為利用ALD之成膜處理(步驟S14)的變形例,亦可取代矽氧化膜而形成矽氮化膜。被蝕刻對象膜與利用ALD所積層之膜的關係上,當被蝕刻處理膜為矽氧化膜之情況,利用ALD之膜可為矽氧化膜亦可為矽氮化膜,但以矽氧化膜為佳。此外,當被蝕刻處理膜為矽氮化膜之情況,利用ALD之膜可為矽氧化膜亦可為矽氮化膜,但以矽氮化膜為佳。亦即,被蝕刻處理膜與以ALD所積層之膜以相同膜為佳。
形成矽氮化膜之情況同樣地,微波電漿裝置(參見圖11)係作為成膜裝置使用。即使是形成矽氮化膜之情況,基本上係以圖5之1~4之製程(步驟S20、S22、S24、S26)為1循環來反覆實行預定重複次數的循環。此處,以形成矽氮化膜之際的程序條件為中心做說明。
1.氣體吸附製程
形成矽氮化膜之情況,於圖5之步驟S20的氣體吸附製程中,對於孔
之表面供給前驅體氣體之DCS(Dichlorosilane,二氯矽烷)。藉此,DCS所含矽(Si)會化學吸附於孔之表面。
此氣體吸附製程中之程序條件之一例,係將壓力控制在400Pa,DCS供給280sccm,氬氣體(Ar)供給900sccm,氮氣體(N2)供給900sccm。
2.第1排氣製程
其次,於第1排氣製程,係對於孔之表面供給氮氣體(N2)、氨氣體(NH3)以及氬氣體(Ar)。藉此,於第1排氣製程,被過度地化學吸附於孔之表面的矽(Si)受到去除而形成矽(Si)原子層。
此第1排氣製程中之程序條件之一例係將壓力控制在266Pa,氮氣體(N2)供給900sccm,氨氣體(NH3)供給400sccm,氬氣體(Ar)供給900sccm。
3.電漿處理製程
其次,於電漿處理製程,對孔之表面供給氮氣體(N2)以及氨氣體(NH3)連同氬氣體(Ar)作為反應性氣體,並將微波供給於處理容器內。藉此,利用微波進行電漿處理,而於孔之表面形成矽氮化膜(SiN)。矽氮化膜(SiN)係用以修復圖3(c)之孔形狀的修復膜29之一例。
此電漿處理製程中程序條件之一例,係將壓力控制在667Pa,氮氣體(N2)供給900sccm,氨氣體(NH3)供給400sccm,氬氣體(Ar)供給900sccm。氮氣體(N2)、氨氣體(NH3)為氮化性氣體之一例。此時,例如供給頻率為2.45GHz、電力為4kW之微波。
4.第2排氣製程
電漿處理後,於第2排氣製程係去除未反應之電漿處理氣體。具體而言,於第2排氣製程係和第1排氣製程同樣地,一邊供給氬氣體(Ar)一邊使用排氣裝置來進行處理容器內之排氣。藉此,未反應之電漿處理氣體受到排氣。
此第2排氣製程中之程序條件之一例,係和第1排氣製程同樣地將壓力控制在266Pa,氮氣體(N2)、氨氣體(NH3)以及氬氣體(Ar)係供給和第1排氣製程相同流量。
依據以上說明之變形例,成膜裝置係對孔之表面供給氮氣體(N2)或是氨氣體(NH3)等反應性氣體連同電漿,使得孔之表面氮化。
藉此,矽氮化膜(SiN)形成於孔之壁面。
據此,藉由於孔之表面沉積緻密的保形矽氮化膜,可修復孔徑與孔之形狀。此外,可調整沉積於孔之矽氮化膜的厚度。
再者,亦可取代使用ALD法之成膜處理,改為利用採MLD(Molecular Layer Deposition)法之成膜處理。據此,亦可於孔之表面沉積矽氧化膜或是矽氮化膜,可修復孔徑與孔之形狀。
作為前驅體氣體之其他例可舉出八甲基環四矽氧烷(OMCTS)。此外,除了OMCTS,亦可使用具有通式Rx-Si-(OR')y(式中,各R為H、CH3、CH2CH3或是其他烷基,各R'為CH3、CH2CH3或是其他烷基,x為0~4,y為0~4,x+y=4)之二甲基二甲氧基矽烷(CH3)2-Si-(O-CH3)2等前驅體氣體,藉由適切的程序窗來沉積薄的保形層。可使用之其他前驅體氣體包含具有構造(Rx-Si-O-Si-Ry)z之1,3-二甲基二矽氧烷(CH3-SiH2-O-SiH2-CH3)、1,1,3,3-四甲基二矽氧烷((CH3)2-SiH-O-SiH-(CH3)2)、六甲基二矽氧烷((CH3)3-Si-O-Si-(CH3)3)等有機二矽氧烷。可使用之其他前驅體氣體包含有環狀有機矽氧烷(Rx-Si-O)y(式中,y大於2,x為1~2,Rx為CH3、CH2CH3或是其他烷基)。可使用之環狀有機矽化合物可包含有帶3個以上矽原子之環式構造,環式構造可進一步含有1個或是複數個氧原子。市售之環狀有機矽化合物具有交互的矽原子以及氧原子,包含1個或是2個烷基鍵結於矽原子之環。
例如,環狀有機矽化合物可含有下述化合物之1個或是複數個:六甲基環三矽氧烷(-Si(CH3)2-O-)3-環狀、1,3,5,7-四甲基環四矽氧烷(TMCTS)(-SiH(CH3)-O-)4-環狀、八甲基環四矽氧烷(OMCTS)(-Si(CH3)2-O-)4-環狀、以及1,3,5,7,9-五甲基環五矽氧烷(-SiH(CH3)-O-)5環狀。
以上前驅體氣體為含矽化合物之成膜氣體之一例。
<第2實施形態>
其次,針對第2實施形態之圖案形成方法,參見圖8來說明。圖8係顯示第2實施形態之圖案形成處理的流程圖。於第2實施形態之圖案形成處理中,除了圖4所示第1實施形態之圖案形成處理的步驟S10、S12、S14,係實行步驟S30、S32之ALD處理之反覆次數的計算處理。
亦即,第2實施形態之圖案形成處理中,係於步驟S10之蝕刻處理實行中或是實行後,於步驟S30監測蝕刻過之孔之形狀。於步驟S32,係基於監測結果來計算蝕刻後孔之直徑,因應於計算出之孔之直徑來計算孔之表面應沉積之膜厚,而計算出相對於被計算出之膜厚,ALD處理之反覆次數n為何。
然後,對於在步驟S14所呼叫出之圖5之步驟S20、S22、S24、S26之1循環,反覆進行對應於步驟S32所計算出之反覆次數n的循環。亦即,基於反覆次數n來決定步驟S28之次數。
依據本實施形態,監測蝕刻後孔之形狀,基於監測結果,因應於蝕刻處理狀況來可變式控制ALD之成膜處理的反覆次數。藉此,可因應於蝕刻時實際的孔形狀之差異來調整膜厚。亦即,可使得因應於孔之實際形狀的膜厚之含矽層沉積於孔之表面。藉此,可更高精度地修復孔徑與孔之形狀。
以上,針對第1以及第2實施形態之圖案形成方法來詳細說明。依據第1以及第2實施形態之圖案形成方法,可藉由蝕刻後所實行之成膜處理來修復孔徑與孔之形狀。
於第1以及第2實施形態所形成之包含修復膜29之深孔圖案乃成為形成電極、電晶體之際的模具。依據第1以及第2實施形態之圖案形成方法,於形成電極、電晶體之際,修復膜29由於藉由ALD法來緻密地被形成,故不會從被蝕刻對象之含矽膜30(矽氧化膜26、矽氮化膜27)剝落。從而,於電極、電晶體之形成後,可和包含修復膜29之含矽膜30(矽氧化膜26、矽氮化膜27)同時地被迅速去除。
〔基板處理系統〕
其次,針對用以實施第1以及第2實施形態之圖案形成方法的基板處理系統之一例,參見圖9來說明。圖9係第1以及第2實施形態之基板處理系統之構成例。基板處理系統200可於圖3(a)顯示初期狀態之形成有積層膜的基板上實行圖4以及圖8之步驟S10、S12、S14,並可實行圖8之S30、S32之處理。
基板處理系統200具有用以進行蝕刻處理(步驟S10)以及罩體去除處理(步驟S12)之蝕刻裝置1、以及罩體去除處理後用以進行利用ALD之成膜處理(步驟S14)之成膜裝置2。處理裝置3、4亦可同樣地成為進行蝕刻處理、
成膜處理之裝置。
蝕刻裝置1、成膜裝置2、處理裝置3,4分別對應於形成六角形之搬送室5的4個邊而設置。此外,於搬送室5之另外2個邊分別設有加載互鎖室6,7。此等加載互鎖室6,7和搬送室5成為相反側設有搬出入室8。搬出入室8和加載互鎖室6,7成為相反側設有埠9、10、11(安裝可收容晶圓W之3個晶圓搬運盒(Foup)F)。
蝕刻裝置1、成膜裝置2、處理裝置3,4以及加載互鎖室6,7係經由閘閥G而連接於搬送室5之六角形各邊。各室係藉由開放各閘閥G而和搬送室5連通,藉由關閉各閘閥G來相對於搬送室5被遮斷。此外,加載互鎖室6,7連接於搬出入室8之部分也設有閘閥G。加載互鎖室6,7係藉由開放閘閥G而和搬出入室8連通,藉由關閉而相對於搬出入室8被遮斷。
於搬送室5內,相對於蝕刻裝置1、成膜裝置2、處理裝置3,4以及加載互鎖室6,7設有進行晶圓W搬出入之搬送裝置12。搬送裝置12係配置於搬送室5之大致中央,於可進行旋轉以及伸縮之旋轉-伸縮部13的前端具有保持晶圓W之2個板體14a,14b。板體14a,14b係相互朝相反方向被裝設於旋轉-伸縮部13。再者,此搬送室5內係被保持在既定真空度。
再者,於搬出入室8之天花板部設有HEPA過濾器(未圖示)。通過HEPA過濾器而去除了有機物、粒子等之清淨空氣係於降流狀態供給於搬出入室8內。是以,於大氣壓之清淨空氣雰圍進行晶圓W之搬出入。於搬出入室8之晶圓搬運盒F安裝用的3個埠9、10、11分別設有擋門(未圖示)。於此等埠9、10、11直接安裝收容著晶圓W或是空的晶圓搬運盒,安裝之際卸下擋門而一邊防止外界氣體之侵入一邊和搬出入室8相連通。此外,於搬出入室8之側面設有對準室15,用以進行晶圓W之對準。
於搬出入室8內設有搬送裝置16,以進行晶圓W對晶圓搬運盒F之搬出入以及晶圓W對加載互鎖室6,7之搬出入。搬送裝置16具有2個多關節臂,可沿著晶圓搬運盒F之配置排列方向而行走於軌道18上。晶圓W之搬送係將晶圓W載放於前端之手部17上來實施。再者,圖9中顯示了其中一手部17存在於搬出入室8,而另一手部插入於晶圓搬運盒F內之狀態。
基板處理系統200之構成部(例如蝕刻裝置1、成膜裝置2、處理裝置3,4、搬送裝置12,16)係連接於電腦所構成之控制部20處而受到控制。此外,
控制部20連接著由操作者為了管理系統而進行指令輸入操作等之鍵盤、將系統之運轉狀況加以視覺化顯示之顯示器等所構成之使用者介面21。
於控制部20進而連接著記憶部22,此記憶部22係儲存有由系統所實行之用以藉由控制部20之控制所實現之圖4、圖5、圖8所示各種處理的控制程式、用以因應於處理條件而於各構成部實行處理之程式(亦即處理配方)。處理配方係記憶於記憶部22中之記憶媒體。記憶媒體可為硬碟,亦可為CDROM、DVD、快閃記憶體等可攜式物。此外,亦可為從其他裝置例如經由專用配線來適宜地傳送配方之構成。
於基板處理系統200之處理係例如以來自使用者介面21之指示等而從記憶部22呼叫出任意處理配方並於控制部20來實行而實施。再者,控制部20可直接控制各構成部,亦可於各構成部設置個別控制器,經由此等進行控制。
於本發明之實施形態之基板處理系統200,首先,加載上收容有經過前處理之晶圓W的晶圓搬運盒F。其次,藉由被保持在大氣壓之清淨空氣雰圍下的搬出入室8內之搬送裝置16,從晶圓搬運盒F取出一片晶圓W而搬入對準室15,進行晶圓W之對位。接著,將晶圓W搬入加載互鎖室6、7之其中一者,對加載互鎖內進行抽真空。藉由搬送室5內之搬送裝置12來取出加載互鎖室內之晶圓W,將晶圓W裝入蝕刻裝置1,進行步驟S10之蝕刻處理,之後,當罩體為阻劑之情況,乃進行步驟12之罩體去除處理。之後,將晶圓W以搬送裝置12來取出,搬入成膜裝置2中,利用ALD法進行電漿處理,來形成修復膜29。之後,利用搬送裝置12取出晶圓W,將晶圓W以搬送裝置12搬入加載互鎖室6、7之其中一者,使得當中回到大氣壓。利用搬出入室8內之搬送裝置16取出加載互鎖室內之晶圓W,收容在晶圓搬運盒F之其中一者。以上動作對於1批晶圓W來進行,結束1組處理。
〔蝕刻裝置之構成例〕
其次,基於圖10說明基板處理系統200之蝕刻裝置1的內部構成一例。圖10乃以第1以及第2實施形態來進行圖4以及圖8之步驟S10之蝕刻處理的蝕刻裝置1之構成例。
蝕刻裝置1具有內部被保持氣密而電性接地的腔室C。蝕刻裝置1係連接於氣體供給源120。氣體供給源120係供給包含氟化碳(CF)系氣體之蝕刻氣體作為蝕刻氣體。氟化碳系氣體亦可含有六氟1,3丁二烯C4F6氣體。
腔室C為圓筒狀,由例如表面經過陽極氧化處理之鋁等所構成,內部設有支撐晶圓W之載置台102。載置台102係發揮下部電極之機能。載置台102被導體之支撐台104所支撐,可經由絕緣板103而被升降機構107所升降。升降機構107係配置於腔室C,被不鏽鋼所構成之波紋管108所被覆。於波紋管108之外側設有波紋管蓋109。於載置台102上方外周設有以例如單晶矽所形成之聚焦環105。再者,以包圍載置台102以及支撐台104周圍的方式設有例如石英等所構成之圓筒狀內壁構件103a。
載置台102係經由第1匹配器111a連接著第1高頻電源110a,從第1高頻電源110a供給既定頻率(例如60MHz)之電漿生成用高頻電力。此外,載置台102經由第2匹配器111b連接著第2高頻電源110b,從第2高頻電源110b供給既定頻率(例如400KHz)之偏壓用高頻電力。另一方面,於載置台102上方係以和載置台102平行對向的方式設置發揮上部電極機能的淋灑頭116,淋灑頭116與載置台102發揮一對電極的機能。
載置台102上面設有用以靜電吸附晶圓W之靜電夾106。靜電夾106係在絕緣體106b之間介設著電極106a。電極106a係連接著直流電壓源112,從直流電壓源112對電極106a施加直流電壓,藉此,晶圓W因庫倫力而被吸附。
於支撐體104之內部形成有冷媒流路104a。冷媒流路104a連接著冷媒入口配管104b、冷媒出口配管104c。於冷媒流路104a中使得適宜冷媒之例如冷卻水等進行循環,以將晶圓W控制在既定溫度。於晶圓W之內面側設有用以供給氦氣體(He)等冷熱傳遞用氣體(背側氣體)之配管130。
淋灑頭116係設置於腔室C之天花板部分。淋灑頭116具有本體部116a與成為電極板之上部頂板116b。淋灑頭116係經由絕緣性構件145而被支撐於腔室C上部。本體部116a係由導電性材料、例如表面經過陽極氧化處理之鋁所構成,將上部頂板116b以可裝卸的方式支撐於其下部。
於本體部116a內部設有氣體之擴散室126a,並以位於擴散室126a下部的方式在本體部116a底部形成有多數之氣體通流孔116d。於上部頂板
116b處,氣體導入孔116e係以在厚度方向上貫通上部頂板116b而和氣體通流孔116d連通的方式來設置。藉由如此之構成,供給於擴散室126a之氣體係經由氣體通流孔116d以及氣體導入孔116e而以淋灑狀被導入腔室C內之電漿處理空間。再者,於本體部116a等設有使得冷媒循環之未圖示之配管,將淋灑頭116加以冷卻而調整成為所希望之溫度。
本體部116a形成有用以對擴散室126a導入氣體之氣體導入口116g。氣體導入口116g處連接著氣體供給源120。
淋灑頭116係經由低通過濾器(LPF)151而電性連接著可變直流電壓源152。可變直流電壓源152藉由開啟-關閉開關153而可進行供電之開啟-關閉。從第1高頻電源110a以及第2高頻電源110b將高頻施加於載置台102而於電漿處理空間產生電漿之際,係視需要對開啟-關閉開關153進行開啟控制。藉此,淋灑頭116被施加既定直流電壓。
以從腔室C側壁朝比淋灑頭116之高度位置更上方延伸的方式設有圓筒狀之接地導體101a。此圓筒狀之接地導體101a於上部具有頂板。於腔室C底部形成有排氣口171。於排氣口171連接著排氣裝置173。排氣裝置173具有真空泵,藉由使得真空泵運轉來將腔室C內減壓至既定真空度。另一方面,於腔室C之側壁設有利用開閉來從搬出入口174搬入或是搬出晶圓W的閘閥175。
載置台102之處理時和上下方向位置對應的腔室C周圍處配置有以環狀或是同心圓狀延伸之雙極環磁石124。
依據相關構成,於載置台102與淋灑頭116之間的空間處係藉由第1高頻電源110a形成鉛直方向之RF電場,並藉由雙極環磁石124形成水平磁場。藉由使用此等正交電磁場之磁控放電,可於載置台102之表面附近生成高密度之電漿。
於腔室C內部設有散射測量儀190作為CD測量器之一例。散射測量儀190係藉由光波散射測量來測量蝕刻中孔之CD。CD測量器之其他例可使用橢圓偏光儀或CD-SEM。
控制部201係控制氣體供給源120中之氣體流量、腔室C內之壓力等蝕刻裝置1全體。此外,控制部201係輸入由散射測量儀190所測量之蝕刻中之孔之CD值,基於所輸入之CD值,以成膜製程(圖5之S20、S22、
S24、S26)為1循環,計算出循環之反覆次數或是反覆時間。據此,可因應於所測量之CD值來可變控制循環之反覆次數或是反覆時間。亦即,監測蝕刻中之實際孔之形狀,基於監測結果來可變控制上述成膜製程之反覆次數。藉此,可使得因應於藉由蝕刻所形成之孔之實際形狀的膜厚之含矽層沉積於孔之表面。藉此,可更高精度修復孔徑與孔之形狀。
〔成膜裝置〕
其次,針對基板處理系統所含成膜裝置1之一例,參見圖11來說明。圖11係第1以及第2實施形態中進行圖4以及圖8之步驟S14的ALD成膜處理之成膜裝置10A之構成例。更具體而言,係實行圖5之流程圖之各製程的成膜裝置。
圖11所示成膜裝置10A為單片式成膜裝置,具有用以供給前驅體氣體之處理頭。具體而言,成膜裝置10A係具有處理容器12A、於處理容器12A內保持晶圓W之載置台14A、以及於處理容器12A內產生反應性氣體電漿之電漿生成部22A。
電漿生成部22A具有:產生電漿激發用微波之微波產生器202、以及用以將微波導入處理容器12A內之輻線狹縫天線204。微波產生器202係經由導波管206而連接於轉換微波模式之模式變換器208。模式變換器208係經由具有內側導波管210a以及外側導波管210b之同軸導波管210來連接於輻線狹縫天線204。由微波產生器202所產生之微波係於模式變換器208進行模式變換而到達輻線狹縫天線204。微波產生器202所產生微波之頻率為例如2.45GHz。
輻線狹縫天線204包含有:介電質窗212,係將處理容器12A所形成之開口120a加以填塞者;狹縫板214,係設置於介電質窗212之正上方;冷卻夾套216,係設置於狹縫板214上方;以及,介電質板218,係配置於狹縫板214與冷卻夾套216之間。狹縫板214具有大致圓板形狀。於狹縫板214處,包含有在相互正交或是交叉方向上延伸之二個狹縫孔的複數狹縫對係以配置於該狹縫板214之徑向以及圓周方向的方式來設置。
介電質窗212係以面對晶圓W的方式來設置。於狹縫板214中央連接著內側導波管210a,於冷卻夾套216連接著外側導波管210b。冷卻夾套216也發揮導波管之機能。藉此,於內側導波管210a與外側導波管210b之間
進行傳遞之微波係穿透介電質板218而通過狹縫板214之狹縫孔傳遞於介電質窗212,穿透介電質窗212而傳遞於處理容器12A內。
於處理容器12A之側壁形成有反應性氣體之供給口120b。於供給口120b連接著反應性氣體之供給源220。在反應性氣體方面,於上述圖5之電漿處理製程中形成矽氧化膜之情況下,係使得氧化性氣體例如氧(O2)氣體連同氬(Ar)氣體等來被供給。此外,形成矽氮化膜之情況,氮化性氣體之氮(N2)氣體或氨(NH3)氣體係連同氬(Ar)氣體等來被供給。於成膜裝置10A中,此反應性氣體係藉由在介電質窗212下面以表面波形式傳遞之微波的電場能量而被電離以及解離,從而生成反應性氣體電漿。藉此,圖5之電漿處理製程(步驟S24)於晶圓W受到實行。
於處理容器12A之底部形成有用以對處理容器12A內之氣體進行排氣之排氣口120c。於排氣口120c係經由壓力調整器222而連接著真空泵224。此等排氣口120c、壓力調整器222以及真空泵224係設置作為排氣裝置。於載置台14A連接著用以調節該載置台14A溫度之溫度調節器226。
成膜裝置10A係進一步具備形成有用以噴射第1前驅體氣體、第2前驅體氣體、以及沖洗氣體之噴射口240a的頭部240。頭部240係經由支撐部242而連接於驅動裝置244。驅動裝置244係配置於處理容器12A外側。頭部240可藉由驅動裝置244而在面對載置台14A之位置以及處理容器12A內所區劃的退避空間120d之間作移動。再者,頭部240當位於退避空間120d內之時係移動擋門247來隔離退避空間120d。
支撐部242係區劃出用以對噴射口240a供給氣體之氣體供給流路,於該支撐部242之氣體供給流路連接著第1前驅體氣體之供給源246、第2前驅體氣體之供給源248、以及沖洗氣體之供給源250。此等供給源246、248、以及250均為可做流量控制之氣體供給源。從而,可從頭部240將第1前驅體氣體、第2前驅體氣體、以及沖洗氣體選擇性地對晶圓W進行噴射。藉由此頭部240以及上述排氣裝置來實行圖5中利用前驅體氣體之氣體吸附製程(步驟S20)、利用沖洗氣體之第1以及第2排氣製程(步驟S22以及步驟S26)。
此外,成膜裝置10A係具備控制部256。控制部256連接於微波產生器202、真空泵224、溫度調節器226、驅動裝置244、以及氣體供給源220、
246、248、250。藉此,控制部256可個別控制微波輸出、處理容器12A內之壓力、載置台14A之溫度、頭部240之移動、以及反應性氣體、第1前驅體氣體、第2前驅體氣體、沖洗氣體之氣體流量以及供給時機。例如,於進行氣體吸附製程(步驟S20)以及第1排氣製程(步驟S22)之際,使得頭部240移動到晶圓W上,進行個別製程。之後,將頭部240移動到退避空間120d。其次,基於上述反應性氣體進行電漿處理製程(步驟S24),之後,再度使得頭部240移動到晶圓W上來實行第2排氣製程(步驟S26)。此等製程係實行預定之次數以實行ALD處理。
成膜裝置10A之頭部240可在其與載置台14A之間區劃出供給第1前驅體氣體、第2前驅體氣體、以及沖洗氣體之小空間。此外,可於處理容器12A內常時性生成反應性氣體電漿。依據如此之成膜裝置,可縮小供給前驅體氣體之空間,且可常時於處理容器12A內生成電漿,而可實現高生產量。
此外,第1前驅體氣體亦可使用BTBAS(bis-tertiaryl-buthyl-amino-silane)之前驅體氣體。此外,第2前驅體氣體可使用二氯矽烷(DCS:Dichlorosilane)DCS。此外,亦可取代二氯矽烷改用矽烷、二矽烷、甲矽烷、或是PH3氣體。此外,沖洗氣體係使用氬(Ar)氣體或氮(N2)氣體等。
以上,參見所附圖式針對圖案形成方法以及基板處理系統之較佳實施形態做了詳細說明,但圖案形成方法以及基板處理系統之技術範圍不限定於相關例。只要是圖案形成方法以及基板處理系統之技術領域中具有通常知識者,當然可於申請專利範圍所記載之技術思想的範疇內想到各種變更例或是修正例,此等當然也屬於圖案形成方法以及基板處理系統之技術範圍。此外,當上述實施形態以及變形例係複數存在之情況,可在不矛盾之範圍內做組合。
於本發明之圖案形成方法所利用之成膜處理除了ALD法之成膜處理以外,尚可藉由電漿CVD來實行。
此外,本發明之基板處理系統中,雖蝕刻處理與成膜處理係於個別之處理裝置中來個別實行,但亦可於一個處理裝置來實行蝕刻處理與成膜處理兩者的處理。
此外,本發明之基板處理系統所處理之對象不限定於晶圓,亦可為既定大小之基板。
25‧‧‧基板
26‧‧‧矽氧化膜
27‧‧‧矽氮化膜
28‧‧‧多晶矽罩體
29‧‧‧修復膜
30‧‧‧含矽膜
Claims (9)
- 一種圖案形成方法,係包含有:蝕刻製程,係藉由從含氟化碳(CF)系氣體之蝕刻氣體所生成的電漿而經由罩體對於基板上之含矽膜進行蝕刻,而於該含矽膜形成既定圖案之凹陷;以及成膜製程,係於該蝕刻製程在該含矽膜形成既定圖案之凹陷後,使用矽化合物氣體使得吸附於該既定圖案之凹陷側面之層藉由氧化性氣體或是氮化性氣體所生成之電漿來被氧化或是氮化,而僅於該既定圖案之凹陷側面形成矽氧化膜或是矽氮化膜。
- 如申請專利範圍第1項之圖案形成方法,其中該成膜製程包含有:吸附製程,係供給含矽之前驅體氣體作為該矽化台物氣體,使得該既定圖案之凹陷表面吸附上該前驅體氣體所含之矽(Si);以及電漿處理製程,係供給該反應性氣體,藉由該反應性氣體所生成之電漿來使得該既定圖案之凹陷表面所吸附之層被氧化或是氮化,而形成該矽氧化膜或是該矽氮化膜。
- 如申請專利範圍第2項之圖案形成方法,其中該成膜製程進而包含有:第1排氣製程,係於該吸附製程後、該電漿處理製程前供給沖洗氣體,來沖洗該既定圖案之凹陷表面;以及第2排氣製程,係於該電漿處理製程後供給沖洗氣體,來沖洗該既定圖案之凹陷表面。
- 如申請專利範圍第2或3項之圖案形成方法,其中該成膜製程係將該成膜製程所含各製程各實行一次之情況當作1循環,使得該循環反覆實行預定之反覆次數或是反覆時間。
- 如申請專利範圍第4項之圖案形成方法,其中該蝕刻製程中進而包含有:測量製程,係測量該既定圖案之凹陷形狀;以及控制製程,係基於該測量製程的測量結果來計算出該反覆次數或是該 反覆時間;該成膜製程係使得該循環反覆實行由該控制製程所計算出之該反覆次數或是該反覆時間。
- 如申請專利範圍第1至3項中任一項之圖案形成方法,其中該成膜製程係因應於形成該既定圖案之凹陷的含矽膜種類來供給從該氧化性氣體或是該氮化性氣體其中一者所選擇之反應性氣體。
- 如申請專利範圍第2或3項之圖案形成方法,其中該前驅體氣體係BTBAS(bis-tertiaryl-buthyl-amino-silane;雙四丁基胺基矽烷)或是二氯矽烷(DCS:Dichlorosilane)。
- 如申請專利範圍第1至3項中任一項之圖案形成方法,其中該蝕刻製程係包含形成該既定圖案之凹陷後去除該罩體之製程。
- 一種基板處理系統,具備有:蝕刻裝置,係藉由從含氟化碳(CF)系氣體之蝕刻氣體所生成的電漿而經由罩體對於基板上之含矽膜進行蝕刻,而於該含矽膜形成既定圖案之凹陷者;以及成膜裝置,係於該蝕刻裝置在該含矽膜形成既定圖案之凹陷後,使用矽化合物氣體使得吸附於該既定圖案之凹陷側面之層藉由氧化性氣體或是氮化性氣體所生成之電漿來被氧化或是氮化,而僅於該既定圖案之凹陷側面形成矽氧化膜或是矽氮化膜。
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