CN118380305A - 化学物分配设备和用于向反应腔室分配化学物的方法 - Google Patents

化学物分配设备和用于向反应腔室分配化学物的方法 Download PDF

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CN118380305A
CN118380305A CN202410381773.2A CN202410381773A CN118380305A CN 118380305 A CN118380305 A CN 118380305A CN 202410381773 A CN202410381773 A CN 202410381773A CN 118380305 A CN118380305 A CN 118380305A
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V·沙尔马
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Abstract

公开了一种向反应腔室提供氯气气相的化学物分配设备和用于向反应腔室分配化学物的方法。所述化学物分配设备包括：配置成用于储存含氯化学物种的化学物储存容器；与所述化学物储存容器流体连通的储集容器，所述储集容器配置成用于将所述含氯化学物种转化成所述氯气气相；和与所述储集容器流体连通的反应腔室。所述方法包括：提供化学物储存容器，所述化学物储存容器含有含氯化学物种；使所述含氯化学物种从所述化学物储存容器流到储集容器；在所述储集容器内将所述含氯化学物种转化成氯气气相；以可控方式使所述氯气气相流入所述反应腔室中。

Description

化学物分配设备和用于向反应腔室分配化学物的方法
本申请是2018年9月21日申请的中国发明专利申请第201811107444.X号(申请人：ASM IP控股有限公司，发明名称：化学物分配设备和用于向反应腔室分配化学物的方法)的分案申请。
技术领域
本公开大体上涉及一种化学物分配设备和用于向反应腔室分配化学物的方法。本公开尤其涉及含氯物种的储存和含氯物种向供用于反应腔室中的氯气气相的转化。
背景技术
用于半导体装置结构的制造中的一些半导体制造工艺可利用高腐蚀性和高毒性化学物种。此类有害化学物种可能需要与用于安全储存、处理和弃置的合适程序相关的复杂安全方案。
通常用于半导体制造工艺中的毒性化学物种的非限制性实例为氯气(Cl2)气相。举例来说，氯气气相可用于清洗工艺、蚀刻工艺和沉积工艺，其中每个半导体工艺需要对氯气气相和任何氯类反应副产物进行专业化储存、处理和弃置。众所周知，氯气气相极具腐蚀性，并且因此，储存，并且具体来说，长期稳定的储存可能需要抗腐蚀的专用储存容器和纯度监测程序。另外，氯气气相为攻击呼吸系统以及眼睛和皮肤的高毒性气体。因此，在半导体装置结构的制造中可利用替代氯气气相的化学物种的设备和方法为合乎需要的。
发明内容
提供本[发明内容]从而以简化形式引入一系列概念。这些概念会在以下本公开的实例实施例的详细描述中加以进一步详述。本[发明内容]并不意图指出所要求的主题的关键特征或基本特征，也并不意图用于限制所要求的主题的范围。
在一些实施例中，提供一种化学物分配设备，其用于向反应腔室提供氯气气相。所述设备可包括：配置成用于储存含氯化学物种的化学物储存容器；与化学物储存容器流体连通的储集容器，所述储集容器配置成用于将含氯化学物种转化成氯气气相；和与储集容器流体连通的反应腔室。
本公开的实施例还可提供用于将氯气气相供应到反应腔室的方法。所述方法可包含：提供化学物储存容器，所述化学物储存容器含有含氯化学物种；使含氯化学物种从化学物储存容器流到储集容器；在储集容器内将含氯化学物种转化成氯气气相；且使氯气气相流入反应腔室中。
出于概述本发明和优于现有技术而实现的优势的目的，上文中已描述本发明的某些目标和优势。当然，应理解，未必所有此类目标或优势都可根据本发明的任一特定实施例实现。因此，举例来说，所属领域的技术人员将认识到，本发明可以按实现或优化如本文中所教示或建议的一种优势或一组优势，但不一定实现如本文中可能教示或建议的其它目标或优势的方式来实施或进行。
所有这些实施例意图在本文中所公开的本发明的范围内。对于所属领域的技术人员来说，这些和其它实施例将从参考附图的某些实施例的以下详细描述变得显而易见，本发明不受限于所公开的任何特定实施例。
附图说明
虽然本说明书以具体地指出并明确地要求保护被视为本发明实施例的内容的权利要求书结束，但在结合附图阅读时，可从本公开的实施例的某些实例的描述中更容易地确定本公开的实施例的优点，在附图中：
图1为根据本公开的实施例的用于向反应腔室提供氯气气相的化学物递送设备的示意图；
图2为根据本公开的实施例的用于向反应腔室分配化学物的示范性方法的过程流程图。
具体实施方式
尽管下文公开某些实施例和实例，但所属领域的技术人员将理解，本发明延伸超出了所具体公开的实施例和/或本发明的用途和显而易见的修改以及其等效物。因此，希望本发明所公开的范围不应受下文所述的特定公开实施例的限制。
本文中呈现的图示并不意图是任何特定材料、结构或装置的实际视图，而仅仅是用以描述本公开的实施例的理想化图示。
如本文所用，术语“衬底”可以指可以使用的，或其上可以形成装置、电路或膜的任何底层材料。
如本文所用，术语“含氯化学物种”可指包含氯(Cl)组分的任何化学物种，不包含氯气气相本身。
本公开的实施例可包含用于向半导体加工设备的反应腔室分配氯气气相的设备和方法。本公开的实施例用腐蚀性可比纯氯气气相要低并且毒性可比其要低的一种或多种含氯化学物种取代纯氯气气相。因此，本公开的实施例的化学物分配设备和方法并未要求呈严格的腐蚀和安全方案形式，其增加半导体装置制造效率和安全性即可。
本公开的实施例可参照图1较详细理解，所述图1展示包括针对反应腔室的化学物分配设备的半导体设备。在本公开的一些实施例中，设备100包括：化学物储存容器102，其可配置成用于储存含氯化学物种103；与化学物储存容器102流体连通的储集容器104，所述储集容器104配置成用于将含氯化学物种转化成氯气气相；和与储集容器104流体连通的反应腔室106。
应注意，如图1所示的化学物分配设备100为本公开的化学物分配设备的简化示意图形式，并且不含可用于本公开的化学物分配设备的制造中的每一个元件，即如每一个阀门、颗粒过滤器、密封件和气体管线。如图1所示的化学物分配设备100提供化学物分配设备的关键特征，所述化学物分配设备向所属领域的技术人员提供足够的公开内容以了解本公开的实施例。
较详细地说，设备100可包括化学物储存容器102，其可配置成用于储存含氯化学物种103。在本公开的一些实施例中，储存在化学物储存容器102中的含氯化学物种103可呈固体、液体或气体形式。在一些实施例中，储存在化学物容器102中的含氯化学物种103可比纯氯气气相的危险性要小、比其毒性要小和/或比其腐蚀性要低。然而，可能仍需要对含氯化学物种103进行谨慎处理和储存，即使化学物种的危险性比纯氯气气相要小。
在本公开的一些实施例中，化学物储存容器102可包括石英材料，即化学物储存容器可大体上由石英材料制成，其对储存在化学物储存容器102中的含氯化学物种103大体上为化学惰性的。在本公开的替代实施例中，化学物储存容器102可由抗腐蚀金属或金属合金，例如哈斯特合金(Hastelloy)、蒙乃尔合金(Monel)或其组合制成。
在本公开的一些实施例中，化学物储存容器102可包括与含氯化学物种103接触的内表面105。由于化学物储存容器102的内表面105与含氯化学物种103之间的直接接触，容器的内表面105可包括为化学物储存容器提供抗腐蚀表面的抗腐蚀涂层，即在化学物储存容器102的内表面上提供抗腐蚀涂层，以使得含氯化学物种与抗腐蚀涂层直接接触，并且不与化学物储存容器的石英/金属表面直接接触。
在本公开的一些实施例中，内表面105上的抗腐蚀涂层可包括氟类抗腐蚀涂层。举例来说，氟类抗腐蚀涂层可包括以下中的一种多种：聚四氟乙烯(PTFE)、氟化乙烯丙烯共聚物(FEP)、全氟烷氧基(PFA)、聚对苯二甲酸乙二酯共聚物(PETG)或聚酰胺类共聚物。
除了涂布有抗腐蚀涂层的化学物储存容器的内表面之外，在本公开的一些实施例中，设备100的各个组件之间的所有气相通道，即气体管线可配置成使得其对储存在化学物储存容器102中的含氯化学物种抗腐蚀，并且对在含氯化学物种转化成氯气气相期间可能产生的任何反应副产物抗腐蚀。举例来说，气相通道、阀门、连接件、密封件、质量流量单元和可能与一种或多种腐蚀性物种接触的设备100的特定所有区域可均由包含以下的抗腐蚀材料制成：哈斯特合金、蒙乃尔合金、镍基合金、钽、钽基合金、碳化硅、氮化硼、碳化硼、氮化铝、熔融硅石、键合非晶硅和其它已知的抗氯性材料。另外，可被含氯化学物种或反应副产物润湿的化学物分配设备100的部分可涂布有氟类抗腐蚀衬里，其包含(但不限于)聚四氟乙烯(PTFE)、氟化乙烯丙烯共聚物(FEP)或全氟烷氧基(PFA)。
在本公开的一些实施例中，化学物储存容器102可进一步包括一个或多个加热单元112，其配置成用于加热储存在化学物储存容器102中的含氯化学物种103。在本公开的一些实施例中，一个或多个加热单元112可用于将含氯化学物种103加热到约大于0℃、或约大于20℃、或约大于100℃、或约大于150℃、或约大于200℃、或约大于200℃、或约大于300℃、或甚至约大于400℃的温度。
在一些实施例中，与化学物储存容器102结合的一个或多个加热单元112配置成用于将含氯化学物种从固体转变成液体或气体。在一些实施例中，与化学物储存容器102结合的一个或多个加热单元112可用于控制储存在化学物储存容器102中的含氯化学物种的粘度。
较详细地说，气相通道108可与化学物储存容器102连接，以使得一种或多种运载气体可经由气相通道108从运载气体储存容器(未图示)输送到化学物储存容器102中。质量流量控制器107可放置在气相通道108上并布置成接近于化学物储存容器102。举例来说，质量流量控制器107可经校准而控制进入化学物储存容器102的运载气体的质量通量，由此允许对含氯化学物种103的后续流动进行更好地控制。
运载气体(例如氢气、氮气、氦气、氩气和其混合物)可流过含氯化学物种103的暴露表面，由此获得(pick up)含氯化学物种103的一部分并将含氯化学物种，连同运载气体一起，输送到设备100中的期望位置。在本公开的替代实施例中，运载气体可例如通过任选的气相通道108`“鼓泡”通过含氯化学物种103，由此搅拌并获得含氯化学物种的一部分，并将含氯化学物种，连同运载气体一起，输送到设备100中的期望位置。举例来说，在一些实施例中，含氯化学物种103可能包括高粘性流体，其不适用于通过使运载气体鼓泡通过含氯化学物种进行气相输送。因此，在本公开的一些实施例中，利用与化学物储存容器102结合的一个或多个加热单元112来降低含氯化学物种103的粘度，使得其更适用于使运载气体鼓泡通过含氯化学物种103来将物种输送到设备100的其它部分。
在本公开的一些实施例中，含氯化学物种103可包括固体、液体或气体。在一些实施例中，含氯化学物种103可包括固体。在一些实施例中，含氯化学物种103可包括液体。在一些实施例中，储存在化学物储存容器102中的含氯化学物种103可包括非金属或半金属氯化物，如以下中的至少一种：S2Cl2、Se2Cl2、SCl2、SCl、PCl5、SeCl4、SeCl2、SiCl4、SbCl3、SbCl5、BCl3、SOCl2、SeO2Cl2、SO2Cl2或SeOCl2。在一些实施例中，含氯化学物种可包括碳和氯原子，例如CCl4或C2Cl6。在一些实施例中，含氯化学物种可包括经取代或未经取代的烷基以及芳基聚酰卤，例如丁二酰氯、丙二酰氯、富马酰氯、亚甲基丁二酰氯(methylenesiccinic acidchloride)、戊二酰氯或乙二酰氯。在一些实施例中，含氯化学物种可包括金属卤氧化物，例如TiOCl2、NbOCl3、MoOCl4、WOCl4或ReO2Cl3。在一些实施例中，含氯化学物种可包括具有通式XaYb的卤间化合物，例如，ClF、BrCl、ClF3、ClF5、ICl3或ICl。在一些实施例中，含氯化学物种可包括具有通式ObXa和ObXaYc的卤氧化物，例如FClO2、FClO3或过氯酸盐(例如Cl2O)。在一些实施例中，含氯化学物种可包括富马酰氯(C2H2C2O2Cl2)。在一些实施例中，含氯化学物种可包括硝酸氯。在一些实施例中，含氯化学物种不包括金属。在一些实施例中，含氯化学物种不包括半金属。在一些实施例中，储存在化学物储存容器102中的含氯化学物种103可包括经取代或未经取代的烷基亚磺酰氯(alkyl Sulfenyl chloride)，其包含(但不限于)三氯甲亚磺酰氯或氯甲酰基亚磺酰基(chlorocarbonylsulfenyl)。在一些实施例中，储存在化学物储存容器102中的含氯化学物种103可包括经取代或未经取代的烷基磺酰氯，诸如(但不限于)三氯甲磺酰氯。
在本公开的一些实施例中，含氯化学物种的至少一部分经由气相通道110从化学物储存容器102直接输送到反应腔室106。在此类实施例中，含氯化学物种绕过储集容器104并经由气相通道110直接输送到反应腔室106。在此类实施例中，气相通道110上的阀门109A可至少部分打开以允许含氯化学物种直接流到反应腔室106。
在其中含氯化学物种从化学物储存容器102直接分配到反应腔室106的实施例中，含氯化学物种可呈气态形式或可通过利用与化学物储存容器102结合的一个或多个加热单元112转变成气态形式。在一些实施例中，在进入反应腔室106之前，气相通道110可包含沿气相通道110布置的质量流量控制器114。在一些实施例中，可针对化学物储存容器102中所存在的特定含氯化学物种校准质量流量控制器114，以使得质量流量控制器114可控制进入反应腔室106中的含氯化学物种的质量通量。
在本公开的一些实施例中，经由气相通道114将含氯化学物种的至少一部分，连同任何运载气体一起，输送到储集容器104。举例来说，阀门109B可至少部分打开以允许气相从化学物储存容器102流到储集容器104。在此类实施例中，含氯化学物种可在储集容器104中经历转化过程，其中所述转化过程将含氯化学物种转化成氯气(Cl2)气相。
在本公开的一些实施例中，储集容器104可包括石英材料，即储集容器104可大体上由石英材料制成。在替代实施例中，储集容器104可由抗腐蚀金属或金属合金，例如哈斯特合金、蒙乃尔合金或其组合制成。
在本公开的一些实施例中，含氯化学物种可在储集容器104中经历分解过程。在本公开的其它实施例中，含氯化学物种可在储集容器104中与合适化学试剂经历一定化学反应。在一些实施例中，含氯化学物种与合适化学试剂之间的反应可通过辐射和/或电力构件活化。
在本公开的一些实施例中，含氯化学物种可在储集容器104中分解，由此形成氯气(Cl2)气相和一种或多种分解副产物。在一些实施例中，一个或多个加热单元116可与储集容器104结合。在一些实施例中，一个或多个能量单元，例如电源或辐射源可与储集容器104结合。举例来说，与储集容器104结合的一个或多个加热单元116可布置在储集容器104的外部(如图1中所展示)，或在替代实施例中，一个或多个加热单元可布置在储集容器104中(未图示)。与储集容器104结合的一个或多个加热单元116(或替代能量单元，例如辐射或电力单元)可用于将含氯化学物种分解成氯气气相和一种或多种分解副产物。举例来说，在本公开的一些实施例中，与储集容器104结合的一个或多个加热单元116可用于加热储集容器104中的含氯化学物种。在本公开的一些实施例中，与储集容器104结合的一个或多个加热单元116可配置成用于将含氯化学物种加热到大于约0℃、或大于约20℃、或大于约100℃、或大于约150℃、或大于约200℃、或大于约300℃、或甚至大于约400℃的温度。在一些实施例中，与储集容器104结合的一个或多个加热单元116可将含氯化学物种加热到以下温度：超过所述温度，含氯化学物种热分解成氯气(Cl2)气相和一种或多种分解副产物。
在本公开的一些实施例中，含氯化学物种的分解可能会引起形成氯气(Cl2)气相和一种或多种分解副产物。在本公开的一些实施例中，储集容器104可包含用于分离氯气(Cl2)气相与一种或多种分解产物的构件，以使得仅氯气气相输送到反应腔室106。举例来说，在一些实施例中，含氯化学物种可包括SO2Cl2，并且在利用一个或多个加热单元116加热到大于80℃的温度后，含氯化学物种可分解形成氯气气相和包括SO2的分解产物。在本公开的一些实施例中，利用镍(Ni)粉末或其它以催化方式活化的表面，分解副产物可与氯气气相选择性地分离，以使得仅氯气气相分配到反应腔室106。
如先前所述，在本公开的一些实施例中，氯化学物种的分解可引起形成氯气气相和一种或多种分解副产物。在一些实施例中，分解副产物可用于反应腔室106中，即可通过反应腔室106中运作的工艺利用一种或多种分解副产物。因此，在本公开的一些实施例中，将含氯化学物种的分解期间产生的一种或多种分解副产物输送到反应腔室106。
在本公开的一些实施例中，储集容器104可包含用于容纳化学试剂120的容器118。在一些实施例中，储集容器104可经由另外的气相通道(未图示)被流体连接以允许其它化学试剂，例如含氧试剂(例如O2、O3或H2O)进入储集容器104以与含氯化学物种反应。在本公开的一些实施例中，化学试剂120可经选择而与含氯化学物种反应以产生氯气(Cl2)气相和一种或多种反应副产物。举例来说，含氯化学物种可经由气相通道114从化学物储存容器102流入储集容器104中，之后，含氯化学物种可与容纳在容器118中的化学试剂120反应。含氯化学物种与化学试剂120之间的反应可引起形成可输送到反应腔室106的氯气(Cl2)气相，以及一种或多种反应副产物。在本公开的一些实施例中，一种或多种反应副产物仍然保持处于容器118中，而在其它实施例中，一种或多种反应副产物可转移到反应腔室106以用于半导体制造工艺。
在本公开的一些实施例中，储集容器104可包含用于分离由含氯化学物种与化学试剂120之间的反应产生的氯气气相与一种或多种反应产物的构件。作为非限制性实例实施例，化学试剂120可包括氧化锰(MnO2)，并且含氯化学物种可包括盐酸(HCl)。当HCl经过MnO2时，氯气气相可连同包括非挥发性MnCl2水合物粉末的反应副产物一起产生，所述反应副产物可保留在容器118中。在本公开的一些实施例中，化学试剂120可包括固体或气相，并且可包含以下中的至少一种：含氧试剂(例如O2、H2O或O3)、过渡金属(例如镍(Ni)或锰(Mn)、锂(Li)、铝(Al))或金属氧化物(例如Al2O3或MnO2)。
在本公开的一些实施例中，含氯化学物种与化学试剂120可在高温下进行。举例来说，与储集容器104结合的一个或多个加热单元116可用于在与含氯化学物种反应之前加热化学试剂120。作为非限制性实例实施例，化学试剂120可在储集容器104中加热到大于约0℃、或大于约20℃、或甚至大于约100℃的温度。在本公开的一些实施例中，替代能量单元可与储集容器104结合，以使得含氯化学物种与化学试剂之间的反应可经由替代能量单元，例如电能单元或辐射能单元来促进。
在本公开的一些实施例中，储集容器104中所产生的氯气气相可直接输送到反应腔室106以用于半导体制造工艺中；换句话说，储集容器104中所产生的氯气气相可即刻用于反应腔室106中。在此类实施例中，氯气气相可流动通过至少部分地打开的阀门124，并且随后在进入反应腔室106之前流动通过所布置的质量流量控制器126。在一些实施例中，针对氯气气相和任选的任何反应副产物校准质量流量控制器126，以使得进入反应腔室的氯气气相的质量通量可得到谨慎地控制。
在本公开的其它实施例中，储集容器中所产生的氯气气相在进入反应腔室中之前，可积聚在气相储存单元中。较详细地说，任选的气相储存单元122可布置于储集容器104与反应腔室106之间，并且此类气相储存单元122可收集和积聚由储集容器104产生的氯气气相。在本公开的一些实施例中，气相储存单元122可与储集容器104形成整体并布置在所述储集容器104中，而在其它实施例中，气相储存单元122可布置在储集容器外部但与储集容器104流体连接(如图1中所展示)。在本公开的一些实施例中，气相储存单元122可积聚足够的氯气气相以供应一个或多个制造工艺的反应腔室。作为非限制性实例实施例，气相储存单元122可配置成用于积聚大于0.01g/cm3、或大于1g/cm3，或甚至大于10g/cm3的氯浓度总量。在本公开的一些实施例中，气相储存单元可配置成用于分配、积聚和/或提取氯气气相，伴随氯气分压大于0.01托、或大于0.10托、或大于1托、或大于10托、或甚至大于50托。在本公开的一些实施例中，气相储存单元122可分配、提取和/或积聚氯气气相，以使得气相储存单元122可提供流速大于0.1sccm、或大于1sccm、或大于10sccm、或大于100sccm、或大于500sccm、或甚至大于1000sccm的氯气流。
在本公开的一些实施例中，将氯气气相和/或含氯化学物种分配到反应腔室106。反应腔室106和相关半导体加工设备(未图示)可采用多种形式，其取决于反应腔室106中所进行的半导体制造工艺。在本公开的一些实施例中，反应腔室可包括以下中的至少一个的反应腔室：原子层蚀刻设备、原子层沉积设备、等离子体蚀刻设备、化学气相沉积设备或预处理设备。在一些实施例中，设备不包括等离子体。
在一些实施例中，反应腔室106可进一步包括衬底支撑件128，在其上可定位至少一个衬底130以供加工。在一些实施例中，从储集容器104分配的氯气气相可进入反应腔室106，并且氯气气相可接触衬底130。
作为非限制性实例实施例，反应腔室106可包括原子层蚀刻设备的反应腔室，并且衬底可与氯气气相接触，以使得衬底130的暴露表面可被氯化，即单个单层氯可存在于衬底130的表面上。氯化衬底130的表面后，后续工艺阶段可包括利用任选的等离子体源132离子轰击氯化表面，举例来说，轰击衬底表面的离子可包括氩离子。氯化衬底表面和随后用氩离子轰击氯化表面的过程可引起原子层蚀刻工艺中的衬底130的一部分被去除。氯化衬底表面和用氩离子轰击氯化表面的过程可重复多次，直到去除所需量的衬底130为止。
本公开的实施例还可包含用于向反应腔室分配氯气气相的方法。本公开的方法可参照图2示出，所述图2展示根据本公开的实施例的示范性方法200过程流程图。
示范性方法200可包含过程框210，其包括提供含有含氯化学物种的化学物储存容器。较详细地说，所述方法可包括由石英材料或抗腐蚀金属或金属合金，例如哈斯特合金或蒙乃尔合金制成化学物储存容器。另外，制造化学物储存容器可包括制造内表面涂布有氟类膜，例如聚四氟乙烯(PTFE)、氟化乙烯丙烯共聚物(FEP)或全氟烷氧基(PFA)的化学物储存容器。提供化学物储存容器的方法还可进一步包括设置一个或多个加热单元，其配置成加热化学物储存容器和其中所储存的含氯化学物种。举例来说，在一些实施例中，本公开的方法可包括将化学物储存容器中的含氯化学物种加热到大于0℃、或大于20℃、或大于100℃、或大于200℃、或大于300℃、或甚至大于400℃的温度。
提供含有含氯化学物种的化学物储存容器的方法可进一步包括选择含氯化学物种以包括在室温和环境压力下呈液体或固体的化学物，例如以下中的至少一种：S2Cl2、Se2Cl2、SCl2、SCl、PCl5、SeCl4、SeCl2、SiCl4、SbCl3、SbCl5、BCl3、SeO2Cl2、SO2Cl2、SeOCl2、SbCl5或SnCl4。或者，含氯化学物种可选自经取代的(或未经取代的)烷基亚磺酰氯或经取代的(或未经取代的)烷基磺酰氯。
方法200可继续进行过程框220，其包括使含氯化学物种流到储集容器。较详细地说，使含氯化学物种流到储集容器可包括将运载气体提供到化学物储存容器中。举例来说，运载气体可包括氢气、氮气、氦气、氩气和其混合物中的至少一种。运载气体可用于将含氯化学物种运送到储集容器。举例来说，在方法的一些实施例中，运载气体可经过含氯化学物种的表面，而在其它实施例中，运载气体可“鼓泡”通过含氯化学物种以有助于获得气相。为了提供对使含氯化学物种流到储集容器的进一步控制，可利用质量流量控制器控制化学物储存容器中的运载气体的质量通量。
方法200可继续进行过程框230，其包括在储集容器中将含氯化学物种转化成氯气气相。较详细地说，本公开的方法可包括通过在储集容器中分解含氯化学物种来将含氯化学物种转化成氯气气相。举例来说，所述方法可包括通过将含氯化学物种加热到大于0℃、或大于20℃、或大于100℃、或大于200℃、或大于300℃、或甚至大于400℃的温度来分解含氯化学物种。分解含氯化学物种以形成氯气气相亦可产生一种或多种分解副产物，其可与氯气气相分离，或替代地，可分配到用于制造工艺中的反应腔室。
本公开的方法还可包括通过使含氯化学物种与布置在储集容器中的化学试剂反应来将含氯化学物种转化成氯气气相。举例来说，用于与含氯化学物种反应的化学试剂可包括以下中的至少一种：含氧试剂(例如O2、H2O或O3)、过渡金属(例如镍(Ni)或锰(Mn)、锂(Li)、铝(Al))或金属氧化物(例如Al2O3或MnO2)。含氯化学物种与化学试剂之间的反应可产生氯气气相和一种或多种反应副产物。在本公开的一些实施例中，方法可包括使一种或多种反应副产物与氯气气相分离，或替代地，一种或多种反应副产物可分配到用于制造工艺中的反应腔室。
方法200可继续进行过程框240，其包括以可控方式使氯气气相流入反应腔室中。较详细地说，可利用质量流量控制器将储集容器中所产生的氯气气相分配到反应腔室以调节进入反应腔室的氯气气相的质量通量。举例来说，质量流量控制器可布置在储集容器与反应腔室之间，以使得氯气气相的质量通量可在进入反应腔室之前得到控制。在本公开的一些实施例中，所述方法可包括在反应腔室中运作工艺之前，将含氯化学物种转化成氯气气相。
在本公开的一些实施例中，以可控方式使氯气气相流入反应腔室中的方法可进一步包括在进入反应腔室之前，将氯气气相积聚和储存于气相储存单元中。举例来说，气相储存单元可布置在储集容器与反应腔室之间，并且可积聚和储存储集容器中所产生的氯气气相。在一些实施例中，本公开的方法可包括将含氯化学物种转化成氯气气相，同时在反应腔室中同步运作工艺。
在本公开的一些实施例中，以可控方式使氯气气相流入反应腔室中的方法可进一步包括使反应腔室中的衬底暴露于氯气气相。举例来说，使衬底暴露于氯气气相可包括在反应腔室中进行的半导体制造工艺的一部分，所述半导体制造工艺包括沉积工艺、蚀刻工艺或清洗工艺中的至少一个。作为非限制性实例，使反应腔室中的衬底暴露于氯气气相可包括原子层蚀刻工艺的一部分，其中使衬底暴露于氯气气相引起衬底的暴露表面氯化。可通过用离子，例如氩离子轰击衬底的氯化表面来进行原子层蚀刻工艺。用离子轰击氯化的衬底表面可通过向反应腔室提供等离子体源，例如远程等离子体源或直接等离子体源来实现。使衬底暴露于氯气气相和后续的离子轰击可在原子层蚀刻工艺中引起衬底的一部分被蚀刻。在本公开的一些实施例中，所述方法可包括使衬底重复暴露于氯气气相，并且随后用离子轰击氯化表面以实现衬底的受控原子蚀刻，直到经由蚀刻工艺移除所需量的衬底。在本公开的一些实施例中，设备100可不包括等离子体源。
上文所述的本公开的实例实施例不限制本发明的范围，这是因为这些实施例仅仅是本发明的实施例的实例，本发明由所附权利要求书和其法定等效物界定。任何等效实施例都意图在本发明的范围内。实际上，除本文中所展示和描述的如所述元件的替代适用组合等内容以外，对于所属领域的技术人员来说，本公开的各种修改将从描述变得显而易见。此类修改和实施例也意图属于所附权利要求书的范围内。

Claims (8)

1.一种化学物分配设备，其向反应腔室提供氯气气相，所述化学物分配设备包括：
化学物储存容器，其配置成用于储存含氯化学物种，其中，所述含氯化学物种指包含氯(Cl)组分的任何化学物种，不包含氯气本身，呈固体或液体形式；和
与所述化学物储存容器流体连通的储集容器，所述储集容器配置成用于将所述含氯化学物种转化成所述氯气和分解或反应副产物，
其中，所述化学储存容器与反应腔室流体连通，以将氯气气相引入到所述反应腔室内。
2.根据权利要求1所述的设备，其中所述反应腔室包括原子层蚀刻设备的反应腔室。
3.根据权利要求1所述的设备，其中所述化学物储存容器包括石英材料。
4.根据权利要求1所述的设备，其中所述化学物储存容器包括涂布有氟类膜的内表面，其中所述氟类膜包括以下中的至少一种：聚四氟乙烯(PTFE)、氟化乙烯丙烯共聚物(FEP)、全氟烷氧基(PFA)、聚对苯二甲酸乙二酯共聚物(PETG)或聚酰胺类共聚物。
5.根据权利要求1所述的设备，其中所述储集容器进一步包括一个或多个加热单元，其配置成用于热分解所述含氯化学物种。
6.根据权利要求1所述的设备，其中所述设备进一步包括用于储存所述氯气的气相储存单元，所述气相储存单元布置在所述储集容器与所述反应腔室之间。
7.根据权利要求1所述的设备，其中所述储集容器进一步包括化学试剂，其配置成与所述含氯化学物种反应以产生所述氯气。
8.根据权利要求1所述的设备，其进一步包括一个或多个加热单元，其配置成用于加热储存在所述化学物储存容器中的所述含氯化学物种。
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TW201934796A (zh) 2019-09-01
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TWI779085B (zh) 2022-10-01
TWI814568B (zh) 2023-09-01
US20200279758A1 (en) 2020-09-03
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