CN113549896A - 用于沉积包括钒、氮和其他元素的层的方法和系统 - Google Patents
用于沉积包括钒、氮和其他元素的层的方法和系统 Download PDFInfo
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- CN113549896A CN113549896A CN202110422433.6A CN202110422433A CN113549896A CN 113549896 A CN113549896 A CN 113549896A CN 202110422433 A CN202110422433 A CN 202110422433A CN 113549896 A CN113549896 A CN 113549896A
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- vanadium
- tantalum
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 148
- 238000000034 method Methods 0.000 title claims abstract description 113
- 229910052720 vanadium Inorganic materials 0.000 title claims abstract description 107
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 73
- 238000000151 deposition Methods 0.000 title abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 74
- 239000010955 niobium Substances 0.000 claims abstract description 74
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 72
- 239000011733 molybdenum Substances 0.000 claims abstract description 72
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 68
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 68
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 63
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 63
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 63
- 239000010703 silicon Substances 0.000 claims abstract description 63
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 62
- 238000005137 deposition process Methods 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 230000005669 field effect Effects 0.000 claims abstract description 7
- 239000002243 precursor Substances 0.000 claims description 270
- 239000000376 reactant Substances 0.000 claims description 104
- 238000006243 chemical reaction Methods 0.000 claims description 70
- 239000007789 gas Substances 0.000 claims description 62
- -1 vanadium halide Chemical class 0.000 claims description 53
- 229910052735 hafnium Inorganic materials 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 13
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 12
- 229910021552 Vanadium(IV) chloride Inorganic materials 0.000 claims description 10
- 150000004820 halides Chemical class 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- JTJFQBNJBPPZRI-UHFFFAOYSA-J vanadium tetrachloride Chemical compound Cl[V](Cl)(Cl)Cl JTJFQBNJBPPZRI-UHFFFAOYSA-J 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 239000005046 Chlorosilane Substances 0.000 claims description 5
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 150000003482 tantalum compounds Chemical class 0.000 claims description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 250
- 238000010926 purge Methods 0.000 description 52
- 239000000463 material Substances 0.000 description 36
- 230000008021 deposition Effects 0.000 description 34
- 230000008569 process Effects 0.000 description 34
- 238000000231 atomic layer deposition Methods 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 17
- 239000003989 dielectric material Substances 0.000 description 16
- 239000000203 mixture Substances 0.000 description 15
- 229910052799 carbon Inorganic materials 0.000 description 13
- 125000004122 cyclic group Chemical group 0.000 description 11
- 239000011810 insulating material Substances 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 8
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 229910003074 TiCl4 Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- IDIOJRGTRFRIJL-UHFFFAOYSA-N iodosilane Chemical compound I[SiH3] IDIOJRGTRFRIJL-UHFFFAOYSA-N 0.000 description 5
- 239000012686 silicon precursor Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910004129 HfSiO Inorganic materials 0.000 description 4
- 229910015221 MoCl5 Inorganic materials 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 150000002363 hafnium compounds Chemical class 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical group Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 3
- 229910052756 noble gas Inorganic materials 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 229910015686 MoOCl4 Inorganic materials 0.000 description 2
- 229910007245 Si2Cl6 Inorganic materials 0.000 description 2
- 229910007264 Si2H6 Inorganic materials 0.000 description 2
- 229910005096 Si3H8 Inorganic materials 0.000 description 2
- 229910003910 SiCl4 Inorganic materials 0.000 description 2
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 2
- 229910004537 TaCl5 Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- MBJAOHZZTCXJSK-UHFFFAOYSA-N [V].BrOBr Chemical compound [V].BrOBr MBJAOHZZTCXJSK-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000003877 atomic layer epitaxy Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 150000001805 chlorine compounds Chemical group 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- QXYJCZRRLLQGCR-UHFFFAOYSA-N molybdenum(IV) oxide Inorganic materials O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 description 2
- DSYRJFDOOSKABR-UHFFFAOYSA-I niobium(v) bromide Chemical compound [Br-].[Br-].[Br-].[Br-].[Br-].[Nb+5] DSYRJFDOOSKABR-UHFFFAOYSA-I 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical group Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical group Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical group Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical group Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 2
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 2
- 150000003682 vanadium compounds Chemical class 0.000 description 2
- JBIQAPKSNFTACH-UHFFFAOYSA-K vanadium oxytrichloride Chemical compound Cl[V](Cl)(Cl)=O JBIQAPKSNFTACH-UHFFFAOYSA-K 0.000 description 2
- MFWFDRBPQDXFRC-LNTINUHCSA-N (z)-4-hydroxypent-3-en-2-one;vanadium Chemical compound [V].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O MFWFDRBPQDXFRC-LNTINUHCSA-N 0.000 description 1
- CHGABJRZTFUHDT-UHFFFAOYSA-N 1-(1-benzofuran-3-yl)ethanone Chemical group C1=CC=C2C(C(=O)C)=COC2=C1 CHGABJRZTFUHDT-UHFFFAOYSA-N 0.000 description 1
- HWXACSZCMYOELG-UHFFFAOYSA-N 2-methylpropan-1-ol niobium Chemical group [Nb].C(C(C)C)O HWXACSZCMYOELG-UHFFFAOYSA-N 0.000 description 1
- DGARWIKXFHSCAC-UHFFFAOYSA-N 2-methylpropan-2-olate;vanadium(4+) Chemical compound [V+4].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] DGARWIKXFHSCAC-UHFFFAOYSA-N 0.000 description 1
- GVHUQXQVSWGYSH-UHFFFAOYSA-N 4-(3-bromophenyl)-2-methyl-1,3-thiazole Chemical compound S1C(C)=NC(C=2C=C(Br)C=CC=2)=C1 GVHUQXQVSWGYSH-UHFFFAOYSA-N 0.000 description 1
- MFWFDRBPQDXFRC-UHFFFAOYSA-N 4-hydroxypent-3-en-2-one;vanadium Chemical compound [V].CC(O)=CC(C)=O.CC(O)=CC(C)=O.CC(O)=CC(C)=O MFWFDRBPQDXFRC-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- KFOJVCNNWVZIOP-UHFFFAOYSA-N C(C)(C)(C)O[V] Chemical compound C(C)(C)(C)O[V] KFOJVCNNWVZIOP-UHFFFAOYSA-N 0.000 description 1
- YNRRZINZEMMGJB-UHFFFAOYSA-N C1(C=CC=C1)[V] Chemical compound C1(C=CC=C1)[V] YNRRZINZEMMGJB-UHFFFAOYSA-N 0.000 description 1
- KWWGSUMPCYNJTG-UHFFFAOYSA-N CC(C)O[V+3] Chemical compound CC(C)O[V+3] KWWGSUMPCYNJTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- LYDXIDCDSVRIBX-UHFFFAOYSA-N O(I)I.[V] Chemical compound O(I)I.[V] LYDXIDCDSVRIBX-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004480 SiI4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910021550 Vanadium Chloride Inorganic materials 0.000 description 1
- DSZNTAUFXUQMMA-UHFFFAOYSA-N [H]C([H])C([H])([H])O[V] Chemical compound [H]C([H])C([H])([H])O[V] DSZNTAUFXUQMMA-UHFFFAOYSA-N 0.000 description 1
- NWQYGOJSNOWMLU-UHFFFAOYSA-N [H]CO[V] Chemical compound [H]CO[V] NWQYGOJSNOWMLU-UHFFFAOYSA-N 0.000 description 1
- ZUAZDLUFCIWOKB-UHFFFAOYSA-N [V+5].CC[O-].CC[O-].CC[O-] Chemical compound [V+5].CC[O-].CC[O-].CC[O-] ZUAZDLUFCIWOKB-UHFFFAOYSA-N 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 150000001723 carbon free-radicals Chemical class 0.000 description 1
- 238000004871 chemical beam epitaxy Methods 0.000 description 1
- ZHXZNKNQUHUIGN-UHFFFAOYSA-N chloro hypochlorite;vanadium Chemical compound [V].ClOCl ZHXZNKNQUHUIGN-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- MDWJZZZKWHLMQP-UHFFFAOYSA-L cyclopentane;dichlorovanadium Chemical compound Cl[V]Cl.[CH]1[CH][CH][CH][CH]1.[CH]1[CH][CH][CH][CH]1 MDWJZZZKWHLMQP-UHFFFAOYSA-L 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- TYAFTSSBHXMDSM-UHFFFAOYSA-N diethylazanide;vanadium(4+) Chemical compound [V+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC TYAFTSSBHXMDSM-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- RNRZLEZABHZRSX-UHFFFAOYSA-N diiodosilicon Chemical group I[Si]I RNRZLEZABHZRSX-UHFFFAOYSA-N 0.000 description 1
- PALZAXLZULBBHA-UHFFFAOYSA-N dimethylazanide;vanadium(4+) Chemical compound [V+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C PALZAXLZULBBHA-UHFFFAOYSA-N 0.000 description 1
- ASLHVQCNFUOEEN-UHFFFAOYSA-N dioxomolybdenum;dihydrochloride Chemical group Cl.Cl.O=[Mo]=O ASLHVQCNFUOEEN-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- ZFCJLQRNVAABBF-UHFFFAOYSA-N ethanolate vanadium(4+) Chemical compound [V+4].CC[O-].CC[O-].CC[O-].CC[O-] ZFCJLQRNVAABBF-UHFFFAOYSA-N 0.000 description 1
- DIPHIZQUERBDLB-UHFFFAOYSA-N ethyl(methyl)azanide;vanadium(4+) Chemical compound [V+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C DIPHIZQUERBDLB-UHFFFAOYSA-N 0.000 description 1
- CRFFKOZWRYKDEG-UHFFFAOYSA-N fluoro hypofluorite vanadium Chemical compound [V].FOF CRFFKOZWRYKDEG-UHFFFAOYSA-N 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- FEEFWFYISQGDKK-UHFFFAOYSA-J hafnium(4+);tetrabromide Chemical compound Br[Hf](Br)(Br)Br FEEFWFYISQGDKK-UHFFFAOYSA-J 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- SYZHAGPAUUOSEZ-UHFFFAOYSA-N iodosilicon Chemical group I[Si] SYZHAGPAUUOSEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- ALTWGIIQPLQAAM-UHFFFAOYSA-N metavanadate Chemical compound [O-][V](=O)=O ALTWGIIQPLQAAM-UHFFFAOYSA-N 0.000 description 1
- QXZJAAMIKRZMQK-UHFFFAOYSA-N methanolate vanadium(4+) Chemical compound [V+4].[O-]C.[O-]C.[O-]C.[O-]C QXZJAAMIKRZMQK-UHFFFAOYSA-N 0.000 description 1
- NBTOZLQBSIZIKS-UHFFFAOYSA-N methoxide Chemical compound [O-]C NBTOZLQBSIZIKS-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- LZRGWUCHXWALGY-UHFFFAOYSA-N niobium(5+);propan-2-olate Chemical group [Nb+5].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] LZRGWUCHXWALGY-UHFFFAOYSA-N 0.000 description 1
- ZTILUDNICMILKJ-UHFFFAOYSA-N niobium(v) ethoxide Chemical group CCO[Nb](OCC)(OCC)(OCC)OCC ZTILUDNICMILKJ-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SFPKXFFNQYDGAH-UHFFFAOYSA-N oxomolybdenum;tetrahydrochloride Chemical compound Cl.Cl.Cl.Cl.[Mo]=O SFPKXFFNQYDGAH-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- RPESBQCJGHJMTK-UHFFFAOYSA-I pentachlorovanadium Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[V+5] RPESBQCJGHJMTK-UHFFFAOYSA-I 0.000 description 1
- NFVUDQKTAWONMJ-UHFFFAOYSA-I pentafluorovanadium Chemical compound [F-].[F-].[F-].[F-].[F-].[V+5] NFVUDQKTAWONMJ-UHFFFAOYSA-I 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- GJBPFDUTFNEFGS-UHFFFAOYSA-N propan-2-olate;vanadium(4+) Chemical compound [V+4].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] GJBPFDUTFNEFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- GCPVYIPZZUPXPB-UHFFFAOYSA-I tantalum(v) bromide Chemical compound Br[Ta](Br)(Br)(Br)Br GCPVYIPZZUPXPB-UHFFFAOYSA-I 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- BIEFSHWAGDHEIT-UHFFFAOYSA-J tetrabromovanadium Chemical compound [V+4].[Br-].[Br-].[Br-].[Br-] BIEFSHWAGDHEIT-UHFFFAOYSA-J 0.000 description 1
- JYHZWKLCYKMFOD-UHFFFAOYSA-J tetraiodovanadium Chemical compound [V+4].[I-].[I-].[I-].[I-] JYHZWKLCYKMFOD-UHFFFAOYSA-J 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- LFXVBWRMVZPLFK-UHFFFAOYSA-N trioctylalumane Chemical compound CCCCCCCC[Al](CCCCCCCC)CCCCCCCC LFXVBWRMVZPLFK-UHFFFAOYSA-N 0.000 description 1
- JQPMDTQDAXRDGS-UHFFFAOYSA-N triphenylalumane Chemical compound C1=CC=CC=C1[Al](C=1C=CC=CC=1)C1=CC=CC=C1 JQPMDTQDAXRDGS-UHFFFAOYSA-N 0.000 description 1
- CNWZYDSEVLFSMS-UHFFFAOYSA-N tripropylalumane Chemical compound CCC[Al](CCC)CCC CNWZYDSEVLFSMS-UHFFFAOYSA-N 0.000 description 1
- ZOYIPGHJSALYPY-UHFFFAOYSA-K vanadium(iii) bromide Chemical compound [V+3].[Br-].[Br-].[Br-] ZOYIPGHJSALYPY-UHFFFAOYSA-K 0.000 description 1
- 125000005287 vanadyl group Chemical group 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Images
Classifications
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising transition metals
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- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- H01L21/02104—Forming layers
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/32051—Deposition of metallic or metal-silicide layers
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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Abstract
公开了用于沉积包括钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层的方法和系统。这些层被沉积到基板的表面上。沉积过程可以是循环沉积过程。可以结合这些层的示例性结构包括场效应晶体管、VNAND单元、金属‑绝缘体‑金属(MIM)结构和DRAM电容器。
Description
技术领域
本公开总体上涉及半导体处理方法和系统领域以及集成电路制造领域。特别地,公开了适用于沉积包括钒、氮和其他元素的层的方法和系统。
背景技术
半导体器件比如互补金属氧化物半导体(CMOS)器件的微缩已经导致集成电路的速度和密度的显著改善。然而,常规的器件微缩技术对于未来的技术节点面临着巨大的挑战。
例如,一个挑战是找到合适的导电材料用作激进微缩的CMOS器件中的栅电极。可以使用各种栅极材料,例如金属,比如氮化钛层。然而,在某些情况下,其中期望比氮化钛层获得更高的功函数值(例如在CMOS器件的PMOS区域中),需要用于栅电极的改进材料。特别地,这样的材料可以包括p-偶极子移位层,并且可以例如用于阈值电压调谐。
另外,仍然需要其他半导体器件中的新材料,例如MIM(金属-绝缘体-金属)结构、DRAM电容器和VNAND单元。
本节中阐述的任何讨论(包括对问题和解决方案的讨论)仅出于提供本公开的上下文的目的而已包括在本公开中。这样的讨论不应被视为承认在进行本发明时已知任何或所有信息,或以其他方式构成现有技术。
发明内容
本发明内容可以以简化的形式介绍概念的选择,这可以在下面进一步详细描述。本发明内容并非旨在必然地标识所要求保护的主题的关键特征或必要特征,也不旨在用于限制所要求保护的主题的范围。
本公开的各个实施例涉及沉积包括钒、氮和另一元素的层的方法,涉及使用这种方法形成的结构和器件,并且涉及用于执行该方法和/或形成该结构和/或器件的设备。这些层可以用于各种应用,包括功函数调节层和阈值电压阈值调节层。例如,它们可以用作p沟道金属氧化物半导体场效应晶体管(MOSFET)中的偶极移位层。
因此,提供了一种用于在反应室中的基板上形成层的方法。该方法包括施加沉积过程。沉积过程包括向反应器室提供第一前体,该第一前体包括钒。另外,沉积过程包括向反应器室提供第二前体,该第二前体包括选自由钼、钽、铌、铝和硅构成的列表的元素。另外,沉积过程包括向反应器室提供反应物,该反应物包括氮。因此,在基板上形成层。该层包括钒。另外,该层包括选自由钼、钽、铌、铝和硅构成的列表的元素。而且,该层包括氮。
在一些实施例中,将第一前体、第二前体和反应物同时提供至反应器室。
在一些实施例中,将第一前体、第二前体和反应物连续地提供至反应器室。
在一些实施例中,反应物包括氨和/或肼。
在一些实施例中,第一前体包括卤化钒、卤氧化钒和钒有机金属化合物中的一个或多个。
在一些实施例中,第一前体包括卤化钒。
在一些实施例中,第一前体包括VCl4。
在一些实施例中,第一前体包括β-二酮酸钒。
在一些实施例中,第二前体包括卤化物。
在一些实施例中,第二前体包括氯化物。
在一些实施例中,第二前体包括金属有机化合物和/或氢化物。
在一些实施例中,第二前体包括烷基铝,并且该层包括铝。
在一些实施例中,第二前体包括三甲基铝。
在一些实施例中,第二前体包括卤化铝,并且该层包括铝。
在一些实施例中,第二前体包括三氯化铝。
在一些实施例中,第二前体包括卤化铌,并且该层包括铌。
在一些实施例中,卤化铌选自氯化铌和溴化铌。
在一些实施例中,第二前体包括卤化铪或金属有机铪化合物,并且该层包括铪。
在一些实施例中,第二前体包括氯化铪。
在一些实施例中,第二前体选自由4[(C2H5)(CH3)N]Hf,[(CH2CH3)2N]4Hf和[(CH3)2N]4Hf构成的列表。
在一些实施例中,第二前体包括卤化钼和/或卤氧化钼,并且该层包括钼。
在一些实施例中,第二前体选自MoCl5,MoO2Cl2和MoOCl4。
在一些实施例中,第二前体包括硅烷和/或氯硅烷,并且该层包括硅。
在一些实施例中,第二前体选自由SiCl4,SiH2Cl2,Si2Cl6,Si3H2Cl6,Si3Cl8,SiH4,Si2H6,Si3H8和SiH2I2构成的列表。
在一些实施例中,第二前体包括卤化钽和/或金属有机钽化合物,并且该层包括钽。
在一些实施例中,第二前体选自由TaCl5,TaBr5和Ta(N(CH3)2)5构成的列表。
在一些实施例中,第二前体是卤化钛,并且该层包括钛。
在一些实施例中,第二前体是TiCl4。
在一些实施例中,沉积过程包括化学气相沉积过程。
在一些实施例中,沉积过程包括循环化学气相沉积过程。
在一些实施例中,第一前体和第二前体以前体脉冲同时提供至反应器室,并且反应物以反应物脉冲提供至反应器室。
在一些实施例中,前体脉冲和反应物脉冲通过吹扫步骤分开。
在一些实施例中,将第一前体和第二前体连续地提供至反应器室,并且以反应物脉冲将反应物提供至反应器室。
在一些实施例中,反应物脉冲通过吹扫步骤分开。
在一些实施例中,将反应物连续地提供至反应器室。
在一些实施例中,第一前体以第一前体脉冲提供至反应器室,并且第二前体以第二前体脉冲提供至反应器室。
在一些实施例中,第一前体脉冲和第二前体脉冲通过吹扫步骤分开。
在一些实施例中,将第一前体和反应物连续地提供至反应器室,并且以第二前体脉冲将第二前体提供至反应器室。
在一些实施例中,第二前体脉冲通过吹扫步骤分开。
在一些实施例中,将第二前体和反应物连续地提供至反应器室,并且以第一前体脉冲将第一前体提供至反应器室。
在一些实施例中,第一前体脉冲通过吹扫步骤分开。
在一些实施例中,将第一前体提供至反应器室的步骤和将第二前体提供至反应器室的步骤通过吹扫步骤分开。
在一些实施例中,将第二前体提供至反应器室的步骤和将反应物提供至反应器室的步骤通过吹扫步骤分开。
在一些实施例中,将反应物提供至反应器室的步骤和将第一前体提供至反应器室的步骤通过吹扫步骤分开。
在一些实施例中,沉积过程包括热处理。
在一些实施例中,该层具有从至少0.2nm到至多5nm的厚度。
在一些实施例中,基板是单晶硅晶片。
在一些实施例中,将第一前体提供至反应器室的步骤和将第二前体提供至反应器室的步骤通过吹扫步骤分开。
在一些实施例中,将第二前体提供至反应器室的步骤和将反应物提供至反应器室的步骤通过吹扫步骤分开。
在一些实施例中,将反应物提供至反应器室的步骤和将第一前体提供至反应器室的步骤通过吹扫步骤分开。
本文进一步描述了包括阈值电压调谐层的环绕栅pmos场效应晶体管。根据如本文所述的用于在反应器室中的基板上形成层的方法来形成阈值电压调谐层。
在一些实施例中,阈值电压调谐层位于氧化硅层和高k介电层之间。
在一些实施例中,高k介电层位于氧化硅层和阈值电压调谐层之间。
本文进一步描述了一种MIM(金属-绝缘体-金属)电极,其包括通过如本文所述的用于在反应器室中的基板上形成层的方法沉积的层。
本文进一步描述了一种VNAND(垂直NAND闪存)接触,其包括通过如本文所述的用于在反应器室中的基板上形成层的方法沉积的层。
进一步描述了一种包括一个或多个反应室的系统。该系统还包括第一前体气体源,其包括第一前体。第一前体包括钒。第二前体气体源包括第二前体。第二前体包括选自由钼、钽、铌、铝和硅构成的列表的元素。该系统还包括反应物气体源,其包括反应物。反应物包括氮。该系统还包括控制器。控制器配置为通过如本文所述的用于在反应器室中的基板上形成层的方法来控制进入一个或多个反应室中的至少一个的气体流,以形成覆盖基板的表面的层,如此形成的层包括钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素。
本文进一步描述了一种用于蚀刻覆盖包括钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层的可蚀刻层的方法。该方法包括以下步骤:将可蚀刻层暴露于与包括钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层相比可蚀刻层具有更高蚀刻速率的蚀刻剂。
在一些实施例中,已经通过如本文所述的用于在反应室中的基板上形成层的方法沉积包括钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层。
通过以下参考附图对某些实施例的详细描述,这些及其他实施例对于本领域技术人员将变得显而易见。本发明不限于所公开的任何特定实施例。
附图说明
当结合以下说明性附图考虑时,可以通过参考详细描述和权利要求来获得对本公开的实施例的更完整的理解。
图1示出了根据本公开示例性实施例的方法。
图2-4示出了根据本公开实施例的示例性结构。
图5示出了根据本公开的另外示例性实施例的反应器系统。
图6示出了示例性DRAM电容器(600)。
图7示出了VNAND单元的一部分,即接触和电荷捕获组件(700)。
在所有附图中,遵循以下编号:100-方法;102-在反应室内提供基板的步骤;104-沉积过程;200-器件、结构;202-基板;205-介电或绝缘材料;208-根据本文所述的方法形成的层;210-附加导电层;212-附加导电层;300-结构;302-基板;304-介电或绝缘材料;306-包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层;312-附加导电层;314-源区域;316-漏极区;318-沟道区;400-结构;402-半导体材料;404-介电材料;406-包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层;408-导电层;500-系统;502-一个或多个反应室;504-第一前体气体源;505-第二前体气体源;506-反应物气体源;508-吹扫气体源;510-排气;512-控制器;514-第一前体气体管线;515-第二前体气体管线;516-反应物气体管线;518-吹扫气体管线;600-DRAM电容器;610-顶部电极;620-介电层;630-介电层;640-底部电极;650-介电层;660-介电层;670-顶部电极;680-间隙填充电介质;700-VNAND结构中的接触和电荷捕获组件;710-金属层;720-衬里;730-电介质;740-电荷捕获层;750-电介质。
将理解的是,附图中的元件是为了简单和清楚而示出的,并且不一定按比例绘制。例如,图中的一些元件的尺寸可能相对于其他元件被放大,以帮助改善对本公开的所示实施例的理解。
具体实施方式
以下提供的方法、结构、器件和系统的示例性实施例的描述仅是示例性的,并且仅用于说明目的;以下描述并非旨在限制本公开或权利要求的范围。此外,对具有所述特征的多个实施例的列举并不旨在排除具有附加特征的其他实施例或结合所述特征的不同组合的其他实施例。例如,各个实施例被阐述为示例性实施例,并且可以在从属权利要求中叙述。除非另有说明,否则示例性实施例或其构成可以组合或可以彼此分开地应用。
如以下更详细地阐述,本公开的各个实施例提供了用于形成结构比如栅电极结构的方法。示例性方法可以用于例如形成CMOS器件或这种器件的一部分。尽管如此,并且除非另外指出,否则本发明不必限于这些示例。
在本公开中,“气体”可以包括在常温常压(NTP)下为气体、气化的固体和/或气化的液体的材料,并且可以根据情况而由单一气体或气体混合物构成。除了处理气体以外的气体即不经过气体分配组件、其他气体分配装置等而导入的气体可以用于例如密封反应空间,并且可以包括密封气体,比如稀有气体。在某些情况下,术语“前体”可以指参与产生另一种化合物的化学反应的化合物,尤其是指构成膜基质或膜主要骨架的化合物;术语“反应物”可以与术语前体互换使用。术语“惰性气体”可以指不参与化学反应和/或在相当大的程度上不成为膜基质的一部分的气体。示例性惰性气体包括氦气、氩气及其任何组合。在某些情况下,惰性气体可以包括氮气和/或氢气。
如本文所用,术语“基板”可以指的是可以用于形成或可以在其上形成器件、电路或膜的任何一个或多个基础材料。基板可以包括块状材料比如硅(例如单晶硅)、其他IV族材料比如锗或其他半导体材料比如II-VI族或III-V族半导体材料,并且可以包括在块状材料之上或之下的一层或多层。此外,基板可包括形成在基板的层的至少一部分之内或之上的各种特征,比如凹陷、突起等。举例来说,基板可以包括块状半导体材料和覆盖在块状半导体材料的至少一部分上的绝缘或介电材料层。
如本文所用,术语“膜”和/或“层”可以指任何连续或不连续的结构和材料,比如通过本文公开的方法沉积的材料。例如,膜和/或层可包括二维材料、三维材料、纳米颗粒、部分或全部分子层或者部分或全部原子层或者原子和/或分子簇。膜或层可以部分或全部由在基板表面上和/或嵌入在基板中和/或嵌入在该基板上制造的器件中的多个分散原子构成。膜或层可以包括具有针孔和/或隔离的岛的材料或层。膜或层可以是至少部分连续的。
如本文所用,“结构”可以是或包括如本文所述的基板。结构可以包括覆盖基板的一层或多层,比如根据本文所述的方法形成的一层或多层。器件部分可以是或包括结构。
如本文所用,术语“沉积过程”可以指将前体(和/或反应物)引入反应室中以在基板上沉积层。“循环沉积过程”是“沉积过程”的示例。
术语“循环沉积过程”或“循环的沉积过程”可以指将前体(和/或反应物)顺序引入反应室中以在基板上沉积层,并且包括处理技术,比如原子层沉积(ALD)、循环化学气相沉积(循环CVD)和包括ALD成分和循环CVD成分的混合循环沉积过程。
术语“原子层沉积”可以指气相沉积过程,其中在处理室中进行沉积循环,通常是多个连续的沉积循环。如本文所用,术语原子层沉积还意指包括当用前体/反应气体和/或吹扫(例如惰性载气)气体的交替脉冲进行时由相关术语比如化学气相原子层沉积、原子层外延(ALE)、分子束外延(MBE)、气体源MBE、有机金属MBE和化学束外延指定的过程。
通常,对于ALD过程,在每个循环期间,将前体引入反应室并化学吸附至沉积表面(例如可以包括来自先前ALD循环的先前沉积材料或其他材料的基板表面),形成不易与其他前体反应(即自限反应)的约单层或亚单层材料。此后,可随后将反应物(例如另一前体或反应气体)引入处理室中,以用于将化学吸附的前体转化为沉积表面上的所需材料。反应物能够与前体进一步反应。可以在一个或多个循环中例如在每个循环的每个步骤中使用吹扫步骤,以从处理室中去除任何过量的前体和/或从反应室中去除任何过量的反应物和/或反应副产物。
如本文所用,术语“吹扫”可以指这样的过程,其中在彼此反应的两个气体脉冲之间向反应器室提供惰性或基本惰性的气体。例如,吹扫例如使用氮气可被提供在前体脉冲和反应物脉冲之间,从而避免或至少最小化前体和反应物之间的气相相互作用。应该理解的是,吹扫既可以在时间上或在空间上进行,也可以在两者上进行。例如,在临时吹扫的情况下,可以使用吹扫步骤,例如在向反应器室提供第一前体、向反应器室提供吹扫气体以及向反应器室提供第二前体的时间顺序中,其中沉积有层的基板不移动。例如,在空间吹扫的情况下,吹扫步骤可以采取以下形式:通过吹扫气幕将基板从连续供应第一前体的第一位置移动到连续供应第二前体的第二位置。
如本文所用,“前体”包括气体或可以变成气态并且可以由化学式表示的材料,该化学式包括可以在本文所述的沉积过程中结合的元素。
术语“反应物”可以指气体或可以变成气态并且可以由包括氮的化学式表示的材料。在某些情况下,化学式包括氮和氢。在某些情况下,氮反应物不包括双原子氮。
此外,在本公开中,变量的任何两个数字可以构成该变量的可行范围,并且所指示的任何范围可以包括或排除端点。另外,所指示的变量的任何值(无论它们是否用“约”指示)都可以指精确值或近似值,并且包括等同物,并且可以指平均值、中间值、代表性值、多数值等。此外,在本公开中,在一些实施例中,术语“包括”、“由...构成”和“具有”独立地指“通常或广泛地包括”、“包括”、“基本上由…构成”或“由…构成”。
在本公开中,在一些实施例中,任何定义的含义不一定排除普通和惯用的含义。
本文提供了一种用于在反应器室中的基板上形成层的方法。该方法包括施加沉积过程。在一些实施例中,沉积过程包括化学气相沉积过程。在一些实施例中,沉积过程包括循环沉积过程。在一些实施例中,该过程包括循环化学气相沉积过程。另外或可替代地,循环沉积过程可以包括原子层沉积过程。在一些实施例中,循环沉积过程具有化学气相沉积和原子层过程的特征,即循环沉积过程可以是混合循环过程。在一些实施例中,沉积过程包括热处理,即不使用等离子体活化物质的过程。
沉积过程包括向反应器室提供第一前体,向反应器室提供第二前体以及向反应器室提供反应物。第一前体包括钒;第二前体包括选自由钼、钽、铌、铝和硅构成的列表的元素;反应物包括氮。因此,在基板上形成层。这样形成的层包括钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素。而且,该层包括氮。根据本方法形成的层是高度有利的,例如用于功函数调谐、应力管理和电阻率调谐的目的。
在一些实施例中,将第一前体、第二前体和反应物同时提供至反应器室。特别地,可以将第一前体、第二前体和反应物连续地提供至反应器室。可替代地,可以将第一前体、第二前体和反应物不连续地提供至反应器室。
本文描述了循环沉积过程的各种变化。因此,在一些实施例中,第一前体和第二前体以前体脉冲同时提供至反应器室,并且反应物以反应物脉冲提供至反应器室。可选地,通过吹扫步骤将前体脉冲和反应物脉冲分开。在一些实施例中,将第一前体和第二前体连续地提供至反应器室,并且以反应物脉冲将反应物提供至反应器室。可选地,通过吹扫步骤将反应物脉冲分开。在一些实施例中,将反应物连续地提供至反应器室。在一些实施例中,第一前体以第一前体脉冲提供至反应器室,第二前体以第二前体脉冲提供至反应器室。可选地,第一前体脉冲和第二前体脉冲通过吹扫步骤分开。在一些实施例中,将第一前体和反应物连续地提供至反应器室。可选地,第二前体以第二前体脉冲提供至反应器室。可选地,第二前体脉冲通过吹扫步骤分开。在一些实施例中,第二前体和反应物连续地提供至反应器室,并且第一前体以第一前体脉冲提供至反应器室。可选地,第一前体脉冲通过吹扫步骤分开。在一些实施例中,将第一前体提供至反应器室的步骤和将第二前体提供至反应器室的步骤通过吹扫步骤分开。在一些实施例中,将第二前体提供至反应器室的步骤和将反应物提供至反应器室的步骤通过吹扫步骤分开。在一些实施例中,将反应物提供至反应器室的步骤和将第一前体提供至反应器室的步骤通过吹扫步骤分开。
在一些实施例中,沉积过程是循环沉积过程,循环沉积过程包括第一前体步骤,其中将第一前体提供至反应室,循环沉积过程包括第二前体步骤,其中将第二前体提供至反应室,并且循环沉积过程包括反应物步骤,其中将反应物提供给沉积室。应当理解,上述步骤的总和包括一个循环。换句话说,将第一前体提供至反应器室、将第二前体提供至反应器室、将反应物提供至反应器室以及可选地在一个或多个吹扫步骤期间向反应器室提供一个或多个吹扫气体的顺序可被认为构成单个循环。本文所述的方法中包括的循环总数尤其取决于所需的总层厚度。在一些实施例中,该方法包括至少1个循环到至多100个循环,或至少2个循环到至多80个循环,或至少3个循环到至多70个循环,或至少4个循环到至多60个循环,或至少5个循环到至多50个循环,或至少10个循环到至多40个循环,或至少20个循环到至多30个循环。在一些实施例中,该方法包括至多100个循环,或至多90个循环,或至多80个循环,或至多70个循环,或至多60个循环,或至多50个循环,或至多40个循环,或至多30个循环,或至多20个循环,或至多10个循环,或至多5个循环,或至多4个循环,或至多3个循环,或至多2个循环,或单个循环。
在一些实施例中,由此形成的层的厚度为至少0.2nm到至多5nm,或至少0.3nm到至多4nm,或至少0.4nm到至多3nm,或至少0.5nm到至多2nm,或至少0.7nm到至多1.5nm或至少0.9nm到至多1.0nm。
在一些实施例中,由此形成的层具有至多5.0nm的厚度,或至多4.0nm的厚度,或至多3.0nm的厚度,或至多2.0nm的厚度,或至多1.5nm的厚度,或至多1.0nm的厚度,或至多0.8nm的厚度,或至多0.6nm的厚度,或至多0.5nm的厚度,或至多0.4nm的厚度,或至多0.3nm的厚度,或至多0.2nm的厚度,或至多0.1nm的厚度。
在一些实施例中,层在以下的基板温度下沉积:小于800℃,或至少20℃到至多800℃,或至少100℃到至多400℃,或至少20℃到至多300℃,或至少20℃到至多200℃。在一些实施例中,层在以下的基板温度下沉积:至少100℃到至多500℃,或至少150℃到至多450℃,或至少200℃到至多400℃,或至少250℃到至多350℃,或至少275℃到至多325℃,或至少250℃到至多450℃,或至少400℃到至多450℃,或至少300℃到至多400℃。
在一些实施例中,层在以下的压力下沉积:小于760托,或至少0.2托到至多760托,或至少1托到至多100托,或至少1托到至多10托。在一些实施例中,层这样沉积:以至多10.0托的压力,或以至多5.0托的压力,或以至多3.0托的压力,或以至多2.0托的压力,或以至多1.0托的压力,或以至多0.1托的压力,或以至多10-2托的压力,或以至多10-3托的压力,或以至多10-4托的压力,或以至多10-5托的压力。
单晶硅晶片可以是合适的基板。其他基板也可能是合适的,例如单晶锗晶片、砷化镓晶片、石英、蓝宝石、玻璃、钢、铝、绝缘体上硅基板、塑料等。
本方法的一个优点是它们允许形成具有高度可调谐特性的包括钒和氮化物的层。可以调谐的示例性特性包括电子功函数、应力和电阻率。例如,当前层可用作PMOSFET中的栅极堆叠功函数调谐金属。另外或可替代地,它们可以用于MIM金属电极和/或VNAND接触。
在一些实施例中,层的钒含量为至少1.0原子百分比到至多99.0原子百分比,或至少3.0原子百分比到至多97.0原子百分比,或至少5.0原子百分比到至多95.0原子百分比,或至少10.0原子百分比到至多90.0原子百分比,或至少20.0原子百分比到至多80.0原子百分比,或至少30.0原子百分比到至多70.0原子百分比,或至少40.0原子百分比到至多60.0原子百分比。
在一些实施例中,层的氮含量为至少1.0原子百分比到至多99.0原子百分比,或至少3.0原子百分比到至多97.0原子百分比,或至少5.0原子百分比到至多95.0原子百分比,或至少10.0原子百分比到至多90.0原子百分比,或至少20.0原子百分比到至多80.0原子百分比,或至少30.0原子百分比到至多70.0原子百分比,或至少40.0原子百分比到至多60.0原子百分比。
在一些实施例中,层的钼含量为至少1.0原子百分比到至多99.0原子百分比,或至少3.0原子百分比到至多97.0原子百分比,或至少5.0原子百分比到至多95.0原子百分比,或至少10.0原子百分比到至多90.0原子百分比,或至少20.0原子百分比到至多80.0原子百分比,或至少30.0原子百分比到至多70.0原子百分比,或至少40.0原子百分比到至多60.0原子百分比。
在一些实施例中,层的钽含量为至少1.0原子百分比到至多99.0原子百分比,或至少3.0原子百分比到至多97.0原子百分比,或至少5.0原子百分比到至多95.0原子百分比,或至少10.0原子百分比到至多90.0原子百分比,或至少20.0原子百分比到至多80.0原子百分比,或至少30.0原子百分比到至多70.0原子百分比,或至少40.0原子百分比到至多60.0原子百分比。
在一些实施例中,层的铌含量为至少1.0原子百分比到至多99.0原子百分比,或至少3.0原子百分比到至多97.0原子百分比,或至少5.0原子百分比到至多95.0原子百分比,或至少10.0原子百分比到至多90.0原子百分比,或至少20.0原子百分比到至多80.0原子百分比,或至少30.0原子百分比到至多70.0原子百分比,或至少40.0原子百分比到至多60.0原子百分比。
在一些实施例中,层的铝含量为至少1.0原子百分比到至多99.0原子百分比,或至少3.0原子百分比到至多97.0原子百分比,或至少5.0原子百分比到至多95.0原子百分比,或至少10.0原子百分比到至多90.0原子百分比,或至少20.0原子百分比到至多80.0原子百分比,或至少30.0原子百分比到至多70.0原子百分比,或至少40.0原子百分比到至多60.0原子百分比。
在一些实施例中,层的硅含量为至少1.0原子百分比到至多99.0原子百分比,或至少3.0原子百分比到至多97.0原子百分比,或至少5.0原子百分比到至多95.0原子百分比,或至少10.0原子百分比到至多90.0原子百分比,或至少20.0原子百分比到至多80.0原子百分比,或至少30.0原子百分比到至多70.0原子百分比,或至少40.0原子百分比到至多60.0原子百分比。
在一些实施例中,层包括钒和氮以及选自由钼、钽、铌、铝和硅构成的列表的两个或更多个元素。例如,层可以包括上述浓度的任何组合的这些组分。
在一些实施例中,层包括钒和氮以及选自由钼、钽、铌、铝和硅构成的列表的三个或更多个元素。例如,层可以包括上述浓度的任何组合的这些组分。
在一些实施例中,层包括钒和氮以及选自由钼、钽、铌、铝和硅构成的列表的四个或更多个元素。例如,层可以包括上述浓度的任何组合的这些组分。
在一些实施例中,层包括钒和氮、钼、钽、铌、铝和硅。例如,层可以包括上述浓度的任何组合的这些组分。
在一些实施例中,本循环方法中的一个或多个步骤通过吹扫步骤分开。因此,在一些实施例中,将第一前体提供至反应器室的步骤和将第二前体提供至反应器室的步骤通过吹扫步骤分开。另外或独立地,将第二前体提供至反应器室的步骤和将反应物提供至反应器室的步骤可以通过吹扫步骤分开。另外或独立地,将反应物提供至反应器室的步骤和将第一前体提供至反应器室的步骤可以通过吹扫步骤分开。在一些实施例中,将第一前体提供至反应器室的步骤和将第二前体提供至反应器室的步骤通过吹扫步骤分开,将第二前体提供至反应器室的步骤和将反应物提供至反应器室的步骤通过吹扫步骤分开,将反应物提供至反应器室的步骤和将第一前体提供至反应器室的步骤通过吹扫步骤分开。在不同脉冲之间提供吹扫步骤可以使前体和/或反应物之间的寄生反应最小化。
在以下各段中,给出了1升反应器室体积和300mm晶片的处理条件。技术人员理解,这些值可以容易地扩展到其他反应器室体积和晶片尺寸。
在一些实施例中,前体和/或反应物被载气夹带。在一些实施例中,以以下流速提供载气:至少0.2到至多2.0slpm,或至少0.3到至多1.5slpm,或至少0.4到至多1.0slpm,或至少0.5到至多0.7slpm。在一些实施例中,N2用作载气。在一些实施例中,稀有气体用作载气。合适的稀有气体包括He、Ne、Ar和Xe。
在一些实施例中,吹扫步骤的持续时间为至少0.025s到至多2.0s,或至少0.05s到至多0.8s,或至少0.1s到至多0.4s,或至少0.2s到至多0.3s。
第一前体被供应到反应器室的时间段可被称为第一前体脉冲。第二前体被供应到反应器室的时间段可被称为第二前体脉冲。反应物被供应到反应器室的时间段可被称为反应物脉冲。
在一些实施例中,第一前体脉冲、第二前体脉冲和/或反应物脉冲的持续时间为至少0.25s到至多4.0s,或至少0.5s到至多2.0s,或至少1.0s到至多1.5s。
在一些实施例中,本方法包括至少10到至多50个沉积循环,或至少2到至多40个沉积循环,或至少3到至多30个沉积循环,或至少4到至多20个沉积循环,或至少5到至多15个沉积循环,或至少7到至多13个沉积循环,或至少9到至多11个沉积循环。在一些实施例中,本方法包括至多50个沉积循环,或至多40个沉积循环,或至多30个沉积循环,或至多20个沉积循环,或至多15个沉积循环,或至多13个沉积循环,或至多11个沉积循环,或至多9个沉积循环,或至多7个沉积循环,或至多5个沉积循环,或至多4个沉积循环,或至多3个沉积循环,或至多2个沉积循环,或1个沉积循环。在所有其他条件相同的情况下,沉积循环的数量越多,沉积的层的厚度就越高。
示例性反应物可以选自氨(NH3)、肼(N2H4)、其他含氮和氢的气体(例如氮气和氢气的混合物)等中的一个或多个。反应物可以包括氮和氢或由之构成。在某些情况下,反应物不包括双原子氮。在一些实施例中,反应物包括氨和/或肼。在一些实施例中,反应物包括氨。在一些实施例中,反应物包括肼。在一些实施例中,反应物包括氨和肼。
在一些实施例中,第一前体包括卤化钒、卤氧化钒和钒有机金属化合物中的一个或多个。因此,在一些实施例中,第一前体包括卤化钒。在一些实施例中,第一前体包括卤氧化钒。在一些实施例中,第一前体包括三氯氧化钒。在一些实施例中,第一前体包括钒醇盐。在一些实施例中,第一前体包括三乙氧基钒(V)。在一些实施例中,第一前体包括三氧化钒(V)。在一些实施例中,第一前体包括钒有机金属化合物。在一些实施例中,第一前体包括VCl4。在一些实施例中,第一前体包括β-二酮酸钒。在一些实施例中,第一前体包括乙酰丙酮钒(III)。
在一些实施例中,第一前体可包括卤化钒、卤氧化钒、β-二酮酸钒化合物、环戊二烯基钒化合物、烷氧基钒化合物、二烷基酰胺基钒化合物等中的一个或多个。
通过特定示例,卤化钒可以选自氟化钒、氯化钒、溴化钒和碘化钒中的一个或多个。卤化钒可仅包括钒和一个或多个卤素,例如四氯化钒等。卤氧化钒可以选自卤氧化钒中的一个或多个,例如氟氧化钒、氯氧化钒、溴氧化钒和碘氧化钒中的一个或多个。卤氧化钒可仅包括钒、氧和一个或多个卤化物。举例来说,卤化和卤氧化钒可以选自由以下中的一个或多个构成的组:VCl4,VBr4,VI4,VOCl4,VOBr3,VOI3(分别称为四氯化钒、四溴化钒、四碘化钒、三氯氧化钒、三溴氧化钒以及三碘氧化钒)。例如,第一前体可包括VCl4。
示例性的β-二酮酸钒化合物包括VO(acac)2,VO(thd)2,V(acac)3,V(thd)3(分别命名为氧代双(2,4-戊二酮基)钒(IV),氧代双(2,2,6,6-四甲基-3,5-庚二酮)钒(IV),三(2,4-戊二酮基)钒(IV)和三(2,2,6,6-四甲基-3,5-庚二酮)钒(IV))等。
示例性钒环戊二烯基化合物包括VCp2Cl2,VCp2,VCp2(CO)4(分别称为双氯双(环戊二烯基)钒(IV),双(环戊二烯基)钒(II)和环戊二烯基钒四羰基)。另外的示例性钒环戊二烯基化合物包括这些化合物的变体,其中Cp是未取代的或带有一个或多个烷基,例如MeCp,EtCp,iPrCp等。
示例性钒醇盐化合物包括V(OMe)4,V(OEt)4,V(OiPr)4,V(OtBu)4,VO(OMe)3,VO(OEt)3,VO(OiPr)3和VO(OtBu)3(分别命名为四(甲氧基)钒(IV),四(乙氧基)钒(IV),四(异丙氧基)钒(IV),四(叔丁氧基)钒(IV),氧杂环丁烷(甲氧基)钒(IV),氧杂(乙氧基)钒(IV),氧杂(异丙氧基)钒(IV)和氧杂(叔丁氧基)钒(IV))。其他的烷氧基钒化合物包括这些化合物的变体,其中使用了其他烷氧基配体。
示例性钒二烷基酰胺基化合物包括V(NMe2)4,V(NEt2)4和V(NEtMe)4(分别称为四(二甲基氨基)钒(IV),四(二乙基氨基)钒(IV)和四(乙基甲基氨基)钒(IV))。
相对于使用其他前体例如钒金属有机前体的方法,使用卤化钒前体可能是有利的,因为卤化钒前体可以相对便宜,可以导致具有较低杂质例如碳浓度的钒层,和/或与使用金属有机或其他钒前体的过程相比,使用此类前体的过程更可控。此外,可以在没有等离子体辅助的情况下使用这样的反应物来形成激发物质。另外,与使用有机金属钒前体的方法相比,使用卤化钒的过程可能更易于按比例扩大。在一些实施例中,使用无卤化物的前体可以是有利的,例如当需要最小化或避免蚀刻暴露的介电层时,例如高k介电层。
在一些实施例中,第二前体包括卤化物。在一些实施例中,第一前体包括卤化物,第二前体包括卤化物。在一些实施例中,第一前体是卤化物,而第二前体是卤化物。在一些实施例中,第二前体包括氯化物。在一些实施例中,第二前体是氯化物。在一些实施例中,第一前体和第二前体包括卤化物。在一些实施例中,第一前体和第二前体包括氯化物。
在一些实施例中,第二前体包括金属有机化合物。在一些实施例中,第二前体包括氢化物。在一些实施例中,第二前体包括醇盐。在一些实施例中,第二前体包括甲醇盐。
在一些实施例中,第二前体包括卤化铝,并且该层包括铝。在一些实施例中,第二前体包括三氯化铝。
在一些实施例中,第二前体包括烷基铝,并且沉积的层包括铝。在一些实施例中,第二前体包括三甲基铝。在一些实施例中,第二前体包括三乙基铝。在一些实施例中,第二前体包括三丙基铝。在一些实施例中,第二前体包括三异丁基铝。在一些实施例中,第二前体包括三辛基铝。在一些实施例中,第二前体包括三苯基铝。
在一些实施例中,第二前体包括铌前体,并且该层包括铌。在一些实施例中,铌前体包括卤化铌。在一些实施例中,卤化铌选自氯化铌和溴化铌。
在一些实施例中,第二前体包括铌有机金属化合物,并且该层包括铌。在一些实施例中,铌有机金属化合物是铌醇盐。在一些实施例中,铌醇盐是乙醇铌(V)。在一些实施例中,铌醇盐是异丙氧基铌。在一些实施例中,铌醇盐是异丁醇铌。
在一些实施例中,第二前体包括铪前体。在一些实施例中,铪前体包括卤化铪或金属有机铪化合物,并且该层包括铪。在一些实施例中,第二前体包括卤化铪。在一些实施例中,卤化铪包括四氯化铪。在一些实施例中,铪前体包括四溴化铪。在一些实施例中,铪前体包括金属有机铪化合物。在一些实施例中,金属有机铪化合物是铪烷基酰胺。在一些实施例中,铪化合物选自由[(C2H5)(CH3)N]4Hf,[(CH2CH3)2N]4Hf和[(CH3)2N]4Hf构成的列表。在一些实施例中,铪化合物是[(C2H5)(CH3)N]4Hf。在一些实施例中,铪化合物是[(CH2CH3)2N]4Hf。在一些实施例中,铪化合物是[(CH3)2N]4Hf。优选地,铪前体与NH3一起用作反应物。
在一些实施例中,第二前体包括钼前体,并且该层包括钼。在一些实施例中,钼前体包括卤化钼和/或卤氧化钼。在一些实施例中,钼前体选自由MoCl5,MoO2Cl2和MoOCl4构成的列表。在一些实施例中,钼前体是MoCl5。在一些实施例中,钼前体是MoO2Cl2。在一些实施例中,钼前体是MoCl5。
在一些实施例中,第二前体包括硅前体,并且该层包括硅。在一些实施例中,硅前体包括硅烷和/或氯硅烷。
在一些实施例中,硅前体包括硅烷。在一些实施例中,硅烷选自由SiH4,Si2H6,Si3H8构成的列表。
在一些实施例中,硅前体包括氯硅烷。在一些实施例中,氯硅烷选自由SiCl4,SiH2Cl2,Si2Cl6,Si3H2Cl6和Si3Cl8构成的列表。
在一些实施例中,硅前体包括碘硅烷。在一些实施例中,碘硅烷是SiH3I。在一些实施例中,碘硅烷是SiH2I2。在一些实施例中,碘硅烷是SiHI3。在一些实施例中,碘硅烷是SiI4。
在一些实施例中,第二前体是钽前体,并且该层包括钽。在一些实施例中,钽前体包括卤化钽和/或金属有机钽化合物。
在一些实施例中,第二前体包括卤化钽。在一些实施例中,卤化钽包括TaCl5。在一些实施例中,卤化钽包括TaBr5。
在一些实施例中,第二前体包括金属有机钽化合物。在一些实施例中,金属有机钽化合物包括Ta(N(CH3)2)5。
在一些实施例中,第二前体包括钛前体,并且该层包括钛。在一些实施例中,钛前体包括卤化钛。在一些实施例中,卤化钛是TiCl4。在一些实施例中,第一前体包括VCl4,第二前体包括TiCl4,并且该层包括钛、钒和氮。在一些实施例中,第一前体是VCl4,第二前体是TiCl4,共反应物是NH3,并且该层由VTiN构成。前体的这种组合可能是有利的。例如,VCl4,TiCl4和NH3是易挥发的并且与批次兼容。
根据本公开的又一实施例,可使用本文所述的方法和/或结构来形成器件或其一部分。该器件可包括基板、绝缘层或介电层、包含钒、氮和选自由覆盖在绝缘或介电层上的钼、钽、铌、铝和硅构成的列表的元素的层以及可选地覆盖包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层的附加金属层。该器件可以是例如MOSFET或形成其一部分,例如pMOSFET。
在一些实施例中,pMOSFET器件可以是环绕栅pmos场效应晶体管。因此,进一步提供了包括阈值电压调谐层的环绕栅pmos场效应晶体管。阈值电压调谐层包括钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素。有利地,根据本文所述的用于在反应室中的基板上形成层的方法形成阈值电压调谐层。
在一些实施例中,阈值调谐层位于氧化硅层和高k介电层之间。
在一些实施例中,高k介电层位于氧化硅层和阈值电压调谐层之间。
本文还提供了金属-绝缘体-金属(MIM)金属电极,其包括的层包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素。有利地,根据本文所述的用于在反应室中的基板上形成层的方法来形成该层。
本文还提供了垂直NAND(VNAND)接触,其包括的层包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素。有利地,根据本文所述的用于在反应室中的基板上形成层的方法来形成该层。
本文还提供了动态随机存取存储器(DRAM)单元电极,其包括的层包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素。有利地,根据本文所述的用于在反应室中的基板上形成层的方法来形成该层。
本文还提供用于蚀刻覆盖包括钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层的可蚀刻层的方法。该方法包括以下步骤:将可蚀刻层暴露于与包括钒、氮和由钼、钽、铌、铝和硅构成的列表的元素的层相比对可蚀刻层具有更高蚀刻速率的蚀刻剂。因此,包括钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层用作蚀刻停止层。有利地,根据本文所述的用于在反应室中的基板上形成层的方法来形成该层。
因此,本文还提供了使用包括钒、氮以及选自由钼、钽、铌、铝和硅构成的列表的元素的层作为蚀刻停止层。
本文还提供了部分或全部衬有包括钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层的导线。在一些实施例中,导线包括铜。在一些实施例中,导线包括钨。在一些实施例中,导线包括由铜和/或钨构成或基本构成的芯。有利地,根据本文所述的用于在反应室中的基板上形成层的方法来形成该层。应当理解,术语“导线”可以指代互连或多个互连,如在集成电路中通常遇到的。
本文还提供了包括一个或多个反应室的系统。该系统还包括第一前体气体源,其包括第一前体。第一前体包括钒。该系统还包括第二前体气体源。第二气体源包括第二前体。第二前体包括选自由钼、钽、铌、铝和硅构成的列表的元素。该系统还包括反应物气体源。反应物气体源包括反应物。反应物包括氮。该系统还包括控制器。控制器配置成控制进入一个或多个反应室中的至少一个的气体流,以形成覆盖基板的表面的层。该层包括钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素。在一些实施例中,该层借助于本文所述的方法沉积。
现在转到附图,图1示出了根据本公开的示例性实施例的方法100。方法100可以用来例如形成适于NMOS、PMOS和/或CMOS器件的栅电极结构,比如用作CMOS器件中的p-偶极移位器。然而,除非另有说明,否则方法不限于此类应用。
方法100包括以下步骤:在反应器的反应室内提供基板(步骤102),并使用沉积过程,在基板的表面上沉积层(步骤104)。有利地,沉积过程包括循环沉积过程。该层包括钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素。
在步骤102期间,在反应室内提供基板。在步骤102期间使用的反应室可以是或包括配置为执行沉积过程例如循环沉积过程的化学气相沉积反应器系统的反应室。尽管如此,反应室也可以是原子层沉积系统的反应室。反应室可以是独立的反应室,也可以是群集工具的一部分。
步骤102可以包括在反应室内将基板加热到期望的沉积温度。在本公开的一些实施例中,步骤102包括将基板加热到小于800℃的温度。例如,在本公开的一些实施例中,将基板加热到沉积温度可以包括将基板加热到约20℃至约800℃,约100℃至约500℃,约150℃至约450℃,或约200℃至约400℃。
除了控制基板的温度以外,还可以调节反应室内的压力。例如,在本公开的一些实施例中,在步骤102期间反应室内的压力可以小于760托或在0.2托和760托之间,约1托和100托之间,或约1托和10托之间,或小于3托,或小于2托,或小于1托。
在步骤104期间,使用沉积过程将层沉积到基板的表面上。沉积过程可以是循环沉积过程。该层包括钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素。如上所述,循环沉积过程可以包括循环CVD、ALD或混合循环CVD/ALD过程。例如,在一些实施例中,与CVD过程相比,特定ALD过程的生长速率可能较低。一种提高生长速率的方法可以是在比ALD过程中通常采用的更高的沉积温度下操作的方法,这导致了化学气相沉积过程的某些部分,但仍利用了顺序引入反应物的优势。这样的过程可被称为循环CVD。在一些实施例中,循环CVD过程可包括将两个或更多个反应物引入反应室,其中在反应室中的两个或更多个反应物之间可能存在重叠的时间段,导致沉积的ALD成分以及沉积的CVD成分。这被称为混合过程。根据另外的示例,循环沉积过程可以包括进入反应室的一种反应物/前体的连续流和第二反应物的循环脉冲。在一些实施例中,沉积过程可以是非循环过程,即其中将前体和反应物连续地提供至反应室的过程。
根据本公开的一些示例,沉积过程是热沉积过程。在这些情况下,沉积过程不包括使用等离子体形成用于沉积过程的活化物质。例如,沉积过程可以不包括氧、氮、硫或碳等离子体的形成或使用,可以不包括激发的氧、氮、硫或碳物质的形成或使用,和/或可以不包括氧、氮、硫或碳自由基的形成或使用。
在步骤104期间,使用钒前体、含氮共反应物和用于选自由钼、钽、铌、铝和硅构成的列表的至少一个元素的前体。合适的前体在本文其他地方描述。
在热循环沉积过程的情况下,向反应室提供反应物的步骤的持续时间可以相对较长,以允许反应物与前体或其衍生物反应。例如,持续时间可以大于或等于5秒或大于或等于10秒或在约5至10秒之间。
作为步骤104的一部分,可以使用真空和/或惰性气体吹扫反应室,以减轻反应物之间的气相反应并实现自饱和表面反应(例如在时间ALD的情况下)。另外或可替代地,可以移动基板以分开接触第一气相反应物和第二气相反应物,例如在空间ALD的情况下。在基板与下一反应性化学品接触之前,可以比如通过吹扫反应空间或移动基板,从基板表面或反应室中除去多余的化学品和反应副产物(如果有的话)。在向反应室提供前体的步骤之后和/或在向反应室提供反应物的步骤之后,可以吹扫反应室。
在本公开的一些实施例中,方法100包括重复单元沉积循环,该循环包括:(1)向反应室提供第一前体,该第一前体包括钒;(2)向反应室提供第二前体,该第二前体包括选自由钼、钽、铌、铝和硅构成的列表的元素;以及(3)在步骤(1)之后,步骤(2)之后和/或步骤(3)之后,通过可选的吹扫或移动步骤,向反应室提供含氮的反应物。基于例如沉积的层的期望厚度,可以将沉积循环重复一次或多次。例如,如果沉积层的厚度小于特定应用所需的厚度,则可以将提供前体至反应室并将反应物提供至反应室的步骤重复一次或多次。一旦已经将层沉积到期望的厚度,就可以对基板进行附加处理以形成器件结构和/或器件。
在一些实施例中,由此形成的层的台阶覆盖率等于或大于在纵横比(高度/宽度)大于约2,大于约5,大于约10,大于约25,大于约50,大于约100或在约10和100之间或约5至约25的结构中/上的约50%,或大于约80%,或大于约90%,或约95%,或约98%,或约99%以上。
图2示出了根据本公开的附加示例的器件200的结构/一部分。器件或结构200包括基板202、介电或绝缘材料205以及根据本文所述的方法形成的层208。在所示的示例中,结构200还包括附加导电层210。
基板202可以是或包括本文所述的任何基板材料。
介电或绝缘材料205可包括一个或多个介电或绝缘材料层。举例来说,介电或绝缘材料205可包括界面层204和沉积在界面层204上的高k材料206。在某些情况下,界面层204可能不存在或可能在相当程度上不存在。界面层204可以包括氧化物,比如氧化硅,其可以使用例如化学氧化过程或氧化物沉积过程形成在基板202的表面上。高k材料206可以是或包括例如介电常数大于约7的金属氧化物。在一些实施例中,高k材料的介电常数高于氧化硅的介电常数。示例性的高k材料包括以下中的一个或多个:氧化铪(HfO2),氧化钽(Ta2O5),氧化锆(ZrO2),氧化钛(TiO2),硅酸铪(HfSiOx),氧化铝(Al2O3)或氧化镧(La2O3)或它们的混合物/层压板。
可以根据本文描述的方法形成包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层208。当使用循环沉积过程形成层208时,通过例如在一个或多个沉积循环中控制前体和/或反应物的量和/或相应的脉冲时间,层208中的钒和/或其他成分的浓度可以从层208的底部到层208的顶部变化。在一些情况下,包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层208可以具有化学计量构成。可以通过改变层208中或沉积循环中钒和/或其他化合物的量来改变该层208的功函数和其他特性。
包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层208可以包括杂质,比如卤化物、氢等。在一些实施例中,单独或组合的杂质含量可以小于一原子百分比,小于0.2原子百分比或小于0.1原子百分比或小于0.05原子百分比。
包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层208的厚度可以根据应用而变化。举例来说,该层208的厚度可以小于5nm或约0.2nm至约5nm,或约0.3nm至约3nm,或约0.3nm至约1nm。当例如用于控制pMOSFETS中的阈值电压时,包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层208可以相对薄,这对于许多应用包括功函数和/或电压阈值调节层是期望的。示例性厚度为0.1至5.0nm,0.2至4.0nm,0.3至3.0nm,0.4至2.0nm,0.5至1.5nm,0.7nm至1.3nm或0.9nm至1.1nm。在一些实施例中,该层可以具有小于0.1nm的厚度。应当理解,这样的层不一定是连续的,甚至可以由多个孤立的原子簇和/或多个孤立的原子构成。
另外或可替代地,包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层208可以例如使用方法100形成如下厚度的连续膜:小于<5nm,<4nm,<3nm,<2nm,<1.5nm,<1.2nm,<1.0nm或<0.9nm。包含钒、氮和另一元素的层208可以是相对光滑的,具有相对低的晶界形成。在一些情况下,包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层208可以是非晶的,或者可以包括非晶区域。另外或可替代地,该层208可以包括相对低的柱状晶体结构(与TiN相比)。包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的示例性层208的RMS粗糙度在厚度<小于10nm时<1.0nm,<0.7nm,<0.5nm,<0.4nm,<0.35nm或<0.3nm。
包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层208的功函数可以是>4.6eV,>4.7eV,>4.8eV,>4.9eV,>4.95eV或>5.0eV。使用这样的层,可以将器件的功函数值偏移约30meV至约400meV,或约30meV至约200meV,或约50meV至约100meV。
附加导电层212可以包括例如金属,比如难熔金属等。
图3示出了根据本公开示例的另一示例性结构300。器件或结构300包括基板302、介电或绝缘材料304以及包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层306。在所示的示例中,结构300还包括附加导电层312。基板302、介电或绝缘材料304、包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层306硅以及附加导电层312可以与基板202、介电或绝缘材料205、包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层208以及导电层210相同或相似。
在示出的示例中,基板302包括源区域314、漏极区316和沟道区318。尽管示出为水平结构,但根据本公开示例的结构和器件可以包括垂直和/或三维结构和器件(比如FinFET器件)和环绕栅MOSFET。
图4示出了根据本公开示例的另一结构400。结构400适用于环绕栅场效应晶体管(GAA FET)(也称为横向纳米线FET)器件等。
在示出的示例中,结构400包括半导体材料402、介电材料404、包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层406以及导电层408。可以在包括本文所述的任何基板材料的基板上形成结构400。
半导体材料402可以包括任何合适的半导体材料。例如,半导体材料402可以包括IV族、III-V族或II-VI族半导体材料。举例来说,半导体材料402包括硅。
介电材料404、包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层406以及导电层408可以与上述的介电或绝缘材料205、包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层208以及导电层210相同或相似。
图5示出了根据本公开的又一示例性实施例的系统500。系统500可用于执行本文所述的方法和/或形成本文所述的结构或器件部分。
在所示的示例中,系统500包括一个或多个反应室502、前体气体源504、反应物气体源506、吹扫气体源508、排气510和控制器512。
反应室502可包括任何合适的反应室,例如ALD或CVD反应室。
前体气体源504可包括容器和单独或与一个或多个载气(例如惰性)气体混合的本文所述的一个或多个前体。反应物气体源506可包括容器和单独或与一个或多个载气混合的本文所述的一个或多个前体。吹扫气体源508可包括本文所述的一个或多个惰性气体。尽管用四个气体源504-508示出,但系统500可以包括任何合适数量的气体源。气体源504-508可通过管线514-518联接至反应室502,管线可各自包括流量控制器、阀、加热器等。
排气510可包括一个或多个真空泵。
控制器512包括电子电路和软件,以选择性地操作系统500中包括的阀、歧管、加热器、泵和其他部件。这样的电路和部件用于从各个源504-508引入前体、反应物和吹扫气体。控制器512可以控制气体脉冲序列的定时、基板和/或反应室的温度、反应室内的压力以及各种其他操作以提供系统500的适当操作。控制器512可以包括控制软件以电或气动地控制阀来控制进出反应室502的前体、反应物和吹扫气体的流动。控制器512可以包括执行某些任务的模块,比如软件或硬件部件,例如FPGA或ASIC。可以有利地将模块配置为驻留在控制系统的可寻址存储介质上,并配置为执行一个或多个过程。
系统500的其他配置是可能的,包括不同数量和种类的前体和反应物源以及吹扫气体源。此外,将理解的是,具有许多布置的阀、导管、前体源和吹扫气体源,其可用于实现将气体选择性地馈送到反应室502中的目标。此外,作为系统的示意性表示,为了简化图示,已经省略了许多部件,并且这些部件可包括例如各种阀、歧管、吹扫器、加热器、容器、通风口和/或旁路。
在反应器系统500的操作期间,诸如半导体晶片(未示出)的基板从例如基板处理系统转移到反应室502。一旦基板被转移到反应室502,就将来自气体源504-508的一个或多个气体(比如前体、反应物、载气和/或吹扫气体)引入反应室502中。
图6示出了示例性DRAM电容器(600)。在所示的实施例中,它包括顶部电极(610、670),其包括两个部分,即内壳和外壳。尽管如此,顶部电极可仅包括一个,或可包括多于两个部分,例如三个或更多个部分。应当理解,图6的实施例中的顶部电极(610、670)的两个部分彼此电连接(未示出连接),即应当理解,在正常操作期间,它们保持在相同或近似相同的电势。顶部电极(610、670)包括包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层。优选地,根据本文公开的方法沉积该层。顶部电极(610、670)可以例如具有的厚度为至少0.5nm至5.0nm,或至少1.0nm到至多4.0nm,或至少2.0nm到至多3.0nm,或至少0.5nm到至多2.5nm,或至少0.6nm到至多2.0nm,或至少0.7nm到至多1.5nm。DRAM电容器(600)还包括底部电极(640)。底部电极(640)包括包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层。在一些实施例中,底部电极(640)的成分等于顶部电极(610、670)的成分。可替代地,底部电极(640)的成分可以与顶部电极(610、670)的成分不同。底部电极(640)可以例如具有的厚度为至少1.0nm到至多10.0nm,或至少3.0nm到至多7.0nm,或至少0.5nm至5.0nm,或至少1.0nm到至多4.0nm,或至少2.0nm到至多3.0nm,或至少0.5nm到至多2.5nm,或至少0.6nm到至多2.0nm,或至少0.7nm到至多1.5nm。底部电极(640)通过一个或多个介电层(620、630)与顶部电极(610)的外壳分开。所示的实施例具有两个介电层(620、630)。一个或多个介电层(620、630)可以包括高k电介质。例如,高k电介质可以选自包括氧化铪(HfO2),氧化钽(Ta2O5),氧化锆(ZrO2),氧化钛(TiO2),硅酸铪(HfSiOx),氧化铝(Al2O3)或氧化镧(La2O3)或它们的混合物/层压板的列表。在一些实施例中,介电层(620)具有与介电层(630)相同的成分。在一些实施例中,介电层(620)具有与介电层(630)不同的成分。两个介电层(620、630)的组合厚度可以是例如至少0.5nm到至多10.0nm,或至少1.0nm到至多8.0nm,或至少2.0nm到至多6.0nm,或至少3.0nm到至多4.0nm。顶部电极(670)的内壳通过一个或多个介电层(650、660)与底部电极(640)分开。所示的实施例具有两个这样的介电层。一个或多个介电层(650、660)可以包括高k电介质。例如,高k电介质可以选自包括氧化铪(HfO2),氧化钽(Ta2O5),氧化锆(ZrO2),氧化钛(TiO2),硅酸铪(HfSiOx),氧化铝(Al2O3)或氧化镧(La2O3)或它们的混合物/层压板的列表。在一些实施例中,介电层(650)具有与介电层(660)相同的成分。在一些实施例中,介电层(650)具有与介电层(660)不同的成分。介电层(650、660)的组合厚度可以例如是至少0.5nm到至多10.0nm,或至少1.0nm到至多8.0nm,或至少2.0nm到至多6.0nm,或至少3.0nm到至多4.0nm。
在一些实施例中,顶部电极(610)的外壳和底部电极(640)之间的一个或多个介电层(620、630)的厚度等于顶部电极(670)的内壳和底部电极(640)之间的一个或多个介电层(650、660)的厚度,例如在以下误差范围内:小于2.0nm,或小于1.5nm,或小于1.0nm,或小于0.5nm,或小于0.4nm,或小于0.3nm,或小于0.2nm或小于0.1nm。可以将间隙填充电介质(680)居中地设置在DRAM电容器(680)中。示例性间隙填充电介质包括低k电介质,例如SiOC、SiOCN等。
图7示出了VNAND单元的一部分,即接触和电荷捕获组件(700)。接触和电荷捕获组件(700)包括金属层(710)。金属层(710)可以由诸如铜,钨等的金属制成。如图7所示,金属层(710)可以衬有衬里(720)。衬里可改善粘附力和/或可防止或至少最小化金属例如铜或钨从金属层(710)向外扩散。有利地,衬里(720)包括包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层。有利地,该层通过本文所述的方法沉积。接触和电荷俘获组件(700)包括电荷俘获层(740)。电荷俘获层(740)位于两个介电层(730、750)之间。电荷俘获层可包括导电层,例如氮化硅。另外或可替代地,电荷俘获层可以包括包含钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素的层。有利地,该层可以通过本文所述的方法沉积。介电层(730)之一与衬里(720)相邻。该介电层(730)可以例如包括高k材料。例如,高k电介质可以选自包括氧化铪(HfO2),氧化钽(Ta2O5),氧化锆(ZrO2),氧化钛(TiO2),硅酸铪(HfSiOx),氧化铝(Al2O3)或氧化镧(La2O3)或它们的混合物/层压板的列表。在VNAND存储器架构中的合适配置中,另一介电层(750)可以用作隧道层,并且可以与例如掺杂多晶硅沟道层(未示出)相邻。
上面描述的本公开的示例实施例不限制本发明的范围,因为这些实施例仅是本发明的实施例的示例,其由所附权利要求及其合法等同物来限定。任何等同的实施例都意图在本发明的范围内。实际上,除了本文示出和描述的那些之外,根据说明书,本公开的各种修改比如所描述的元件的可替代的有用组合对于本领域技术人员而言可以变得显而易见。这样的修改和实施例也意图落入所附权利要求的范围内。
Claims (20)
1.一种用于在反应器室中的基板上形成层的方法,所述方法包括施加沉积过程,该沉积过程包括:
向反应器室提供第一前体,该第一前体包括钒;
向反应器室提供第二前体,该第二前体包括选自由钼、钽、铌、铝和硅构成的列表的元素;以及
向反应器室提供反应物,该反应物包括氮;
从而在基板上形成层,该层包括钒;该层包括选自由钼、钽、铌、铝和硅构成的列表的元素;并且该层包括氮。
2.根据权利要求1所述的方法,其中,所述反应物包括氨和/或肼。
3.根据权利要求1或2所述的方法,其中,所述第一前体包括卤化钒、卤氧化钒和钒有机金属化合物中的一个或多个。
4.根据权利要求3所述的方法,其中,所述第一前体包括VCl4。
5.根据权利要求1至4中任一项所述的方法,其中,所述第二前体包括卤化物。
6.根据权利要求1至4中任一项所述的方法,其中,所述第二前体包括烷基铝,并且其中,所述层包括铝。
7.根据权利要求6的方法,其中,所述第二前体包括三甲基铝。
8.根据权利要求1至4中任一项所述的方法,其中,所述第二前体包括卤化铌,并且其中,所述层包括铌。
9.根据权利要求1至4中任一项所述的方法,其中,所述第二前体包括卤化铪或金属有机铪化合物,并且其中,所述层包括铪。
10.根据权利要求1至4中任一项所述的方法,其中,所述第二前体包括卤化钼和/或卤氧化钼,并且其中,所述层包括钼。
11.根据权利要求1至4中任一项所述的方法,其中,所述第二前体包括硅烷和/或氯硅烷,并且其中,所述层包括硅。
12.根据权利要求1至4中任一项所述的方法,其中,所述第二前体包括卤化钽和/或金属有机钽化合物,并且其中,所述层包括钽。
13.根据权利要求1至4中任一项所述的方法,其中,所述第二前体包括卤化钛,并且其中,所述层包括钛。
14.根据权利要求1至13中任一项所述的方法,其中,所述层的厚度为至少0.2nm到至多5nm。
15.根据权利要求1至14中任一项所述的方法,其中,将所述第一前体、第二前体和反应物同时提供至所述反应器室。
16.根据权利要求1至14中任一项所述的方法,其中,所述沉积过程是循环沉积过程。
17.一种环绕栅pmos场效应晶体管,包括阈值电压调谐层,该阈值电压调谐层是根据权利要求1至16中任一项所述的方法形成的。
18.一种MIM金属电极,包括通过权利要求1至16中任一项所述的方法沉积的层。
19.一种VNAND接触,包括通过根据权利要求1至16中任一项所述的方法沉积的层。
20.一种系统,包括:
一个或多个反应室;
包括第一前体的第一前体气体源,所述第一前体包括钒;
包括第二前体的第二前体气体源,所述第二前体包括选自由钼、钽、铌、铝和硅构成的列表的元素;
包括反应物的反应物气体源,所述反应物包括氮;
控制器,
其中,所述控制器配置为通过根据权利要求1至16中任一项所述的方法来控制进入所述一个或多个反应室中的至少一个的气体流,以形成覆盖基板的表面的层,所述层包括钒、氮和选自由钼、钽、铌、铝和硅构成的列表的元素。
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- 2021-04-19 TW TW110113900A patent/TW202143304A/zh unknown
- 2021-04-20 CN CN202110422433.6A patent/CN113549896A/zh active Pending
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US20210335615A1 (en) | 2021-10-28 |
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