JP2005533178A - 窒化タングステンの蒸着 - Google Patents
窒化タングステンの蒸着 Download PDFInfo
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- JP2005533178A JP2005533178A JP2004521556A JP2004521556A JP2005533178A JP 2005533178 A JP2005533178 A JP 2005533178A JP 2004521556 A JP2004521556 A JP 2004521556A JP 2004521556 A JP2004521556 A JP 2004521556A JP 2005533178 A JP2005533178 A JP 2005533178A
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- substrate
- tungsten
- vapor
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- bis
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- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 81
- 239000010937 tungsten Substances 0.000 title claims abstract description 77
- -1 Tungsten nitride Chemical class 0.000 title claims abstract description 41
- 230000008021 deposition Effects 0.000 title description 19
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 54
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 38
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000010949 copper Substances 0.000 claims abstract description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052802 copper Inorganic materials 0.000 claims abstract description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 12
- 230000004888 barrier function Effects 0.000 claims abstract description 11
- 238000009792 diffusion process Methods 0.000 claims abstract description 10
- 239000001257 hydrogen Substances 0.000 claims abstract description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000004377 microelectronic Methods 0.000 claims abstract description 8
- 239000002879 Lewis base Substances 0.000 claims abstract description 7
- 150000007527 lewis bases Chemical class 0.000 claims abstract description 7
- 239000003990 capacitor Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 33
- 238000000151 deposition Methods 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 229910021529 ammonia Inorganic materials 0.000 claims description 14
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 11
- 125000000217 alkyl group Chemical group 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- FZFRVZDLZISPFJ-UHFFFAOYSA-N tungsten(6+) Chemical compound [W+6] FZFRVZDLZISPFJ-UHFFFAOYSA-N 0.000 claims description 6
- 125000004429 atom Chemical group 0.000 claims description 5
- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 125000004946 alkenylalkyl group Chemical group 0.000 claims 3
- 125000005038 alkynylalkyl group Chemical group 0.000 claims 3
- 125000003710 aryl alkyl group Chemical group 0.000 claims 3
- 229940126062 Compound A Drugs 0.000 claims 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 claims 1
- 230000004913 activation Effects 0.000 claims 1
- 238000007796 conventional method Methods 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 abstract description 18
- 239000011248 coating agent Substances 0.000 abstract description 16
- 230000008569 process Effects 0.000 abstract description 14
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 abstract description 3
- 239000012528 membrane Substances 0.000 abstract description 3
- 239000004020 conductor Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 45
- 239000002243 precursor Substances 0.000 description 33
- 238000006243 chemical reaction Methods 0.000 description 18
- 239000000376 reactant Substances 0.000 description 18
- 239000012159 carrier gas Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 10
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000007787 solid Substances 0.000 description 9
- 239000000725 suspension Substances 0.000 description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 238000005481 NMR spectroscopy Methods 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000006557 surface reaction Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000004009 13C{1H}-NMR spectroscopy Methods 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 description 2
- 230000001464 adherent effect Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 229910021360 copper silicide Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- YDGSUPBDGKOGQT-UHFFFAOYSA-N lithium;dimethylazanide Chemical compound [Li+].C[N-]C YDGSUPBDGKOGQT-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 239000012691 Cu precursor Substances 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 238000003877 atomic layer epitaxy Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 150000001923 cyclic compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 125000005462 imide group Chemical group 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- WJBNXEUDLVCWBD-UHFFFAOYSA-N n-trimethylsilylbutan-1-amine Chemical compound CCCCN[Si](C)(C)C WJBNXEUDLVCWBD-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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- 239000000843 powder Substances 0.000 description 1
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- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
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- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010414 supernatant solution Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000005891 transamination reaction Methods 0.000 description 1
- 150000003658 tungsten compounds Chemical class 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
- C07F11/005—Compounds containing elements of Groups 6 or 16 of the Periodic Table compounds without a metal-carbon linkage
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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Abstract
Description
(a)該薄膜の少なくとも2つの元素を含有する第1材料の蒸気に該基材をさらして、該第1材料の蒸気の少なくとも一部を自己制限的な方法によって該基材表面に吸着させ;
(b)該基材の周辺から該第1材料の非吸着蒸気を除去し;
(c)該基材表面を活性化させる第2材料の蒸気に該基材をさらして、該表面が該第1材料の追加量と反応できるようにし;
(d)該基材の周辺から該第2材料の残留蒸気を除去すること;
を含む方法である。
本発明は、タングステンと窒素を含む材料を調製するための方法を提供し、該材料は、たとえ炭素、酸素又は水素などのより少量の他の元素を含有するとしても「窒化タングステン」と称される。通常の化学気相成長(CVD)法においては、タングステン前駆体の蒸気が、ルイス塩基、例えば、アンモニアと基材表面で反応する。窒化タングステンは、加熱基材上に膜として形成することができる。交互層堆積(ALD)プロセスにおいては、基材は、タングステン前駆体の蒸気、次いでアンモニア又はピリジンなどの別のルイス塩基に交互にさらされる。プラズマアシストALDプロセスにおいては、基材は、タングステン前駆体の蒸気、次いで水素含有プラズマに交互にさらされる。以下により詳細に説明されるように、ALD法は非常にコンフォーマルな膜を与え、広範囲な反応条件及び反応体の反応性において使用するのに好適である。
例示的なタングステン前駆体、ビス(tert−ブチルイミド)ビス(ジメチルアミド)タングステン(VI)、(t−BuN)2(Me2N)2Wは、以下の反応順序に従って合成することができる。
WCl6 + 4HN(t-Bu)SiMe3 → (t-BuN)2WCl2NH2(t-Bu) + 3Me3SiCl + (t-Bu)(Me3Si)NH2Cl
(1)
(t-BuN)2WCl2NH2(t-Bu) + 2pyr → (t-BuN)2WCl2(pyr)2 + (t-Bu)NH2
(2)
(t-BuN)2WCl2(pyr)2 + 2LiNMe2 → (t-BuN)2(Me2N)2W + 2LiCl + 2pyr
(3)
これらの式において、「t−Bu」とは第三ブチルを表し、「pyr」とはピリジンを表す。
本発明の1つ又は複数の実施態様による方法は、原子層堆積(ALD)装置を用いて実施することができる。第1及び第2反応体蒸気が堆積チャンバーに交互に投与され、制御された組成及び厚さの層が基材上に形成される。この装置によって、第1反応体蒸気の測定量がその中にコーティングされるべき基材を有する堆積チャンバーに導入される。第1反応体の薄層が基材上に堆積される。所定の時間後、次いで、第2反応体蒸気の測定量を堆積チャンバーに導入し、第1反応体によって既に堆積された層と相互に作用させる。この時間は数秒程度でよく、導入されたばかりの成分が基材上で反応するのに十分でかつ基材上のヘッドスペースから余分な蒸気をすべて除去するのに十分な時間を与えるよう選択される。表面の反応は自己制限的であるので、予測可能な組成の再現可能な層が堆積することが測定された。当業者であれば理解できるように、3つ以上の反応体成分を利用した堆積方法も本発明の範囲内である。
n=(Peq/Ptot)(Ptot−Pdep)(V/RT1)
式中、Vはチャンバー10における蒸気スペース30の体積である。バルブ70を開けている間、体積30にチューブ95から幾らかのキャリヤーガスを入れる場合には、これよりも幾分多い投与量を送ることができる。体積Vを十分大きくすることによって、表面反応を完了(「飽和」とも呼ばれる)させるほど前駆体の投与量を十分大きくすることができる。蒸気圧Peqが非常に低いため、必要とされる体積Vが実行不可能に大きくなる場合には、他の反応体の投与を供給する前に、体積Vから追加の投与量を供給することができる。
[ビス(tert−ブチルイミド)ビス(ジメチルアミド)タングステン(VI)、(t−BuN)2(Me2N)2Wの合成]
1)トルエン(300mL)中、WCl6(30.0g、75.6mmol)の紫色懸濁液に、トルエン(65mL)中、HN(t−Bu)SiMe3(50g、344mmol)の溶液を2時間かけて滴下した。この懸濁液を合計24時間撹拌した。濃緑色の懸濁液をセライトに通して濾過し、固体の(t−Bu)(Me3Si)NH2Clと全ての未反応WCl6を除去した。暗褐色の濾液を温水浴において真空下で乾燥した。幾つかの不純物を溶解させるため、得られた暗褐色の固体にヘキサン50mLを添加して撹拌した。褐色の懸濁液を一晩フリーザーで冷却し、次いで、不純物を含有する暗褐色の上澄み溶液を別の容器に移した。[(t−BuN)2WCl2NH2(t−Bu)]2に関するNMR、1H NMR(CDCl3):δ4.3(br,4,H2NMe3),1.45(s,18,μ−NCMe3),1.40(s,18,NCMe3),1.33(s,18,H2NCMe3)(この第1反応に関する参考文献:A.J.Nielson,Polyhedron,第6巻,1657頁,1987)。
[ビス(tert−ブチルイミド)ビス(エチルメチルアミド)タングステン(VI)の合成]
ビス(tert−ブチルイミド)ビス(エチルメチルアミド)タングステン(VI)、(t−BuN)2(EtMeN)2Wを合成するために、LiNMe2をLiNEtMeに置き換えた。生成物は淡黄色の液体である(17.1g、収率50%)(沸点が20mTorrで79〜81℃)。1H NMR(C6D6):δ3.70(q,4,3J=7.0Hz,N(CH2CH3)Me),3.50(s,12,NEtMe),1.40(s,18,NCMe3),1.18(t,6,3J=7.0Hz,N(CH2CH3)Me)。13C{1H}NMR(C6D6):66.2(2,NCMe3),59.7(2,N(CH2CH3)Me),50.1(2,NEtMe),34.0(6,NCMe3),16.3(2,N(CH2CH3)Me)。認められた(計算された)C14H34N4Wに関する元素組成は、37.74(38.01)%C、7.90(7.75)%H、12.51(12.67)%N、(41.57)%Wであった。
[窒化タングステンのALD]
窒化タングステンコーティングを堆積するのに図1の装置を使用した。ビス(tert−ブチルイミド)ビス(ジメチルアミド)タングステン(VI)を0.6リットルの蒸気体積を有するステンレス鋼容器10に入れ、30℃に加熱した。その温度で、タングステン前駆体は、約6mTorrの蒸気圧を有する。アンモニアを20℃で圧縮ガスボンベに保持し、圧力調整器に通してその圧力が2.4気圧まで下がるようにした。シリコン基材130は、それを希釈フッ化水素酸溶液中に数秒間入れて、その自然酸化物を溶解させることにより調製した。次に、この基材をその表面が親水性になるまで空気中で紫外線(例えば、UV水銀ランプ)により照射した(約3分)。次いで、直径2.4cmを有するチャンバー110中の半円筒形基材ホルダー25cm長さの上に基材130を置き、長さ30cmにわたって300℃の温度に加熱した。細いホール(幅0.1μm×0.2μm、深さ7.3μm)を有する別のシリコン基材を同様に洗浄して、チャンバー110に置いた。
UV−オゾン処理によって生成される酸化物の中間層なしで窒化タングステン膜をシリコン上に直接堆積したこと以外は、例3を繰り返した。WNxを1000℃の温度にアニーリングすることによりケイ化タングステンのコーティングを生成した。
タングステン前駆体蒸気への暴露時間を10秒〜60秒に増やしたこと以外は、例3を繰り返した。同一の結果が得られ、このことはタングステン前駆体の化学反応が10秒以内に完了することを示している。
タングステンの投与を2倍にしたこと以外は、例3を繰り返した。膜厚及びその特性は、例3のものと変わらなかった。これらの結果はタングステン前駆体の表面反応が自己制限的であることを示している。
アンモニアの投与を2倍にしたこと以外は、例3を繰り返した。膜厚及びその特性は、例3のものと変わらなかった。これらの結果はアンモニアの表面反応が自己制限的であることを示している。
基材温度を250℃〜350℃の範囲で変化させたこと以外は、例3を繰り返した。膜厚が図3に示すように基材温度により変化したこと以外は、同様の窒化タングステン膜が得られた。250℃未満の温度では膜は形成しなかった。膜は350℃よりも高い温度で形成したが、この膜は、タングステンと窒素に加えて炭素を含有しており、その段差被覆性は、250℃〜350℃で作られた膜ほど良くはなかった。
アンモニアの代わりに水素プラズマを用いて例3を繰り返した。250ワットのRF電力(13.56MHz)を容量結合して水素プラズマを形成した。堆積されたままの膜の抵抗率がはるかにより低く、約4×10−4Ω・cmであり、炭素含有量がより高かったこと以外は、例3と同様の結果が得られた。
溶融シリカ、石英、ソーダライムガラス、ガラス状炭素、ステンレス鋼、アルミニウム、銅及び金の基材を用いて例3を繰り返した。同一の結果が得られた。
アンモニアは使用せず、タングステン前駆体のみを用いて例1を繰り返した。膜は形成しなかった。
ALD窒化タングステン膜は、以下の試験により銅の拡散に対する優れたバリヤーであることが示された。厚さが1nm、2nm、5nm、10nm、20nm、50nm及び100nmの膜を含めて、シリコン基材上1nm〜100nm厚さの様々な窒化タングステン膜の上部に100nmの銅をスパッタした。これらSi/WN/Cu構造の試料をフォーミングガス中において様々な温度で30分間アニーリングした。表面上の銅を硝酸溶液中に溶解し、次いで、窒化タングステンをアンモニア/過酸化水素溶液中に溶解した。SEMによるシリコンの検査では、450、500又は550℃でアニーリングした試料において変化は見られなかった。600℃でアニーリングした試料は、窒化タングステンバリヤーの孤立した崩壊により、ケイ化銅の光沢のある結晶が幾つか見られた。650℃でアニーリングした試料は、バリヤーの完全な崩壊によりケイ化銅の結晶が多数見られた。これらの結果は、窒化タングステンが550℃まで安定で、わずか約1nm又は2nm厚さの膜の場合でさえ、銅の拡散に対して優れたバリヤーであることを意味すると通常解される。
酸化銅は、チャンバー10の銅前駆体とチューブ180を通るオゾン発生器からのオゾン/酸素混合ガスとを用い、図1で説明した装置により、基材温度200℃で銅(II)ビス(sec−ブチルアセトアセテート)の蒸気とオゾン/酸素の混合ガスに交互にさらしてそれを100サイクル行うALDによって窒化タングステン膜上に堆積させた。酸化銅、CuOを約0.05nm/サイクルの速度で堆積させた。水素雰囲気中で1時間、試料を500℃に加熱することにより酸化銅を銅金属に還元した。得られた光沢のある銅層は窒化タングステンに強く付着しており、粘着テープでは取り除くことができなった。
例12で生成した薄いALDの銅層を「シード」層として使用して、Chemistry of Materials,第12巻,2076頁,2000においてE.S.Hwang及びJ.Leeにより説明されている方法を用いた銅のCVDを開始することができる。
例12で生成した薄いALDの銅層を「シード」層として使用して、周知の方法で銅の電気化学メッキを開始することができる。
本発明のALDプロセスを使用して、WNx/HfO2/WNxの構造を有するキャパシタを作製することができ、式中、WNx層は導電性電極であり、HfO2は絶縁性誘電層である。HfO2は、国際公開WO02/27063号パンフレットの例12に記載されているテトラキス(ジメチルアミド)ハフニウムと水蒸気のALD反応により作製することができる。
本発明のALDプロセスを使用して、WNx/Ta2O5/WNxの構造を有するキャパシタを作製することができ、式中、WNx層は導電性電極であり、Ta2O5は絶縁性誘電層である。Ta2O5は、国際公開WO02/27063号パンフレットの例15に記載されているエチルイミドトリス(ジエチルアミド)タンタルと水蒸気のALD反応により作製することができる。
標準的な14NH3の代わりに同位元素的に標識化された15NH3を用いて例3を繰り返した。窒化タングステン膜をラザフォード後方散乱により分析して、膜中の窒素が標準的な窒素14Nであり、15Nではないことが示された。したがって、膜中の窒素は、アンモニアではなくタングステン前駆体中の窒素に起因している。
アンモニアの代わりにピリジン蒸気を用いて例13を繰り返した。同様の結果が得られた。窒化タングステン膜の生成におけるピリジンの効果は、ALDプロセスの第2成分が堆積プロセスを活性化するよう作用するが、それ自体堆積膜には組み込まれないという主張と一致する。ピリジンがアミノ基転移を受けることはないが、それにもかかわらず、ピリジンは窒化タングステン膜を堆積させる。このことは、ALDプロセスの第2成分がこの反応において塩基触媒として作用することを示唆している。
Claims (23)
- 1つ又は複数のサイクルを含む逐次的な方法によって基材表面に薄膜を堆積させる方法であって、少なくとも1つのサイクルが、
該薄膜の少なくとも2つの元素を含有する第1材料の蒸気に該基材をさらして、該第1材料の蒸気の少なくとも一部を自己制限的な方法によって該基材表面に吸着させ;
該基材の周辺から該第1材料の非吸着蒸気を除去し;
該基材表面を活性化させる第2材料の蒸気に該基材をさらして、該表面が該第1材料の追加量と反応できるようにし、この活性化が該第2材料の元素を該薄膜中に取り込まないことを特徴とし;
該基材の周辺から該第2材料の残留蒸気を除去すること;
を含む方法。 - タングステンと窒素を含む薄膜を形成するための、請求項1に記載の方法。
- 1つ又は複数のサイクルを含む逐次的な方法によって基材表面に薄膜を堆積させる方法であって、少なくとも1つのサイクルが、
タングステンとモリブデンから成る群より選択された元素を含みかつ該薄膜の少なくとも2つの元素を含有する第1材料の蒸気に該基材をさらして、該第1材料の蒸気の少なくとも一部を自己制限的な方法によって該基材表面に吸着させ;
該基材の周辺から該第1材料の非吸着蒸気を除去し;
該基材表面を活性化させる第2材料の蒸気に該基材をさらして、該表面が該第1材料の追加量と反応できるようにし;
該基材の周辺から該第2材料の残留蒸気を除去すること;
を含む方法。 - 前記第1材料が、タングステン−窒素結合を含む1つ又は複数の化合物を含む、請求項3に記載の方法。
- 前記第1材料が、モリブデン−窒素結合を含む1つ又は複数の化合物を含む、請求項3に記載の方法。
- 前記第2材料がルイス塩基である、請求項3に記載の方法。
- 前記ルイス塩基がアンモニアである、請求項10に記載の方法。
- 前記ルイス塩基がピリジンである、請求項10に記載の方法。
- 前記第2材料が水素プラズマを含む、請求項3に記載の方法。
- 前記第2材料が水素原子を含む、請求項3に記載の方法。
- 前記基材が約200℃〜約400℃の温度で維持される、請求項3に記載の方法。
- 請求項1又は6に記載の方法によって形成された、1つ又は複数の導電性電極を含む電気キャパシタ。
- 請求項1又は6に記載の方法によって形成された、超小型電子デバイスの金属拡散に対するバリヤー。
- 1〜100nmの厚さを有する、請求項17に記載の拡散バリヤー。
- MeがWである、請求項19又は20に記載の組成物。
- 請求項19又は20に記載の化合物を表面に接触させることを含む、蒸気相から材料を堆積させる方法。
- 銅の特徴を含む超小型電子デバイスであって、請求項3又は6に記載の方法に従って堆積された窒化タングステン層が該デバイスの基材と該銅の特徴との間に挿入された、超小型電子デバイス。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008120788A (ja) * | 2006-07-31 | 2008-05-29 | Rohm & Haas Electronic Materials Llc | 有機金属化合物 |
WO2012165124A1 (ja) * | 2011-05-27 | 2012-12-06 | 株式会社Adeka | 酸化モリブデンを含有する薄膜の製造方法、酸化モリブデンを含有する薄膜の形成用原料及びモリブデンアミド化合物 |
US8755679B2 (en) | 2006-04-05 | 2014-06-17 | Horiba Stec, Co., Ltd. | Liquid material vaporizer |
JP2014534952A (ja) * | 2011-09-27 | 2014-12-25 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | タングステンジアザブタジエン分子、その合成及びタングステン含有膜の堆積へのその使用 |
JP2016181687A (ja) * | 2015-03-24 | 2016-10-13 | ラム リサーチ コーポレーションLam Research Corporation | ハードマスクのための金属誘電体膜の蒸着 |
Families Citing this family (280)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7685341B2 (en) * | 2005-05-06 | 2010-03-23 | Fotonation Vision Limited | Remote control apparatus for consumer electronic appliances |
KR20050091488A (ko) * | 2004-03-12 | 2005-09-15 | 주식회사 유피케미칼 | 세라믹 또는 금속박막 증착용 전구체 화합물 및 그제조방법 |
JP2006097099A (ja) * | 2004-09-30 | 2006-04-13 | Tri Chemical Laboratory Inc | 膜形成材料、膜形成方法、及び素子 |
FR2880037B1 (fr) * | 2004-12-23 | 2007-03-30 | Air Liquide | Procede de depot d'une couche de carbonitrure metallique pour la fabrication d'electrodes ou de couches barrieres |
US7272436B2 (en) | 2005-01-25 | 2007-09-18 | Pacesetter, Inc. | System and method for distinguishing among cardiac ischemia, hypoglycemia and hyperglycemia using an implantable medical device |
FR2883287A1 (fr) * | 2005-03-16 | 2006-09-22 | Air Liquide | Precurseurs organo-metalliques et leur procede de fabrication |
DE102006000823A1 (de) | 2006-01-05 | 2007-07-12 | H. C. Starck Gmbh & Co. Kg | Wolfram- und Molybdän-Verbindungen und ihre Verwendung für die Chemical Vapour Deposition (CVD) |
DE102006006283B4 (de) * | 2006-02-10 | 2015-05-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Thermisch stabiler Multilayer-Spiegel für den EUV-Spektralbereich |
JP5555872B2 (ja) * | 2006-06-28 | 2014-07-23 | プレジデント アンド フェローズ オブ ハーバード カレッジ | 金属(iv)テトラ−アミジネート化合物ならびに蒸着においての使用 |
JP5571547B2 (ja) | 2007-04-09 | 2014-08-13 | プレジデント アンド フェローズ オブ ハーバード カレッジ | 銅の相互接続体のための窒化コバルト層及びそれらを形成する方法 |
US8636845B2 (en) | 2008-06-25 | 2014-01-28 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Metal heterocyclic compounds for deposition of thin films |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
KR20120090996A (ko) * | 2009-08-27 | 2012-08-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 인-시튜 챔버 세정 후 프로세스 챔버의 제염 방법 |
US8592606B2 (en) | 2009-12-07 | 2013-11-26 | Air Products And Chemicals, Inc. | Liquid precursor for depositing group 4 metal containing films |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
KR20140085461A (ko) | 2011-09-27 | 2014-07-07 | 레르 리키드 쏘시에떼 아노님 뿌르 레?드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 니켈 비스 디아자부타디엔 전구체, 그들의 합성, 및 니켈 함유 필름 침착을 위한 그들의 용도 |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
WO2013192220A1 (en) * | 2012-06-18 | 2013-12-27 | University Of Florida Research Foundation, Inc. | Tungsten nitrido precursors for the cvd of tungsten nitride, carbonitride, and oxide films |
WO2014052642A1 (en) * | 2012-09-28 | 2014-04-03 | Advanced Technology Materials, Inc. | Fluorine free tungsten ald/cvd process |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US9643159B2 (en) | 2012-10-16 | 2017-05-09 | The Regents Of The University Of Colorado, A Body Corporate | Catalyst support structure, catalyst including the structure, reactor including a catalyst, and methods of forming same |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US20160032454A1 (en) * | 2013-03-15 | 2016-02-04 | L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude | Bis(alkylimido)-bis(alkylamido)tungsten molecules for deposition of tungsten-containing films |
WO2015056944A1 (ko) * | 2013-10-14 | 2015-04-23 | 한국화학연구원 | 몰리브데넘 화합물 또는 텅스텐 화합물, 이의 제조 방법 및 이를 이용하여 박막을 형성하는 방법 |
KR101505126B1 (ko) * | 2013-10-14 | 2015-03-24 | 한국화학연구원 | 텅스텐 화합물, 이의 제조 방법 및 이를 이용하여 박막을 형성하는 방법 |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
TWI656232B (zh) | 2014-08-14 | 2019-04-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 鉬組成物及其用於形成氧化鉬膜之用途 |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
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US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
KR101581314B1 (ko) | 2015-07-20 | 2015-12-31 | (주)마이크로켐 | 텅스텐 전구체 및 이를 포함하는 텅스텐 함유 필름 증착방법 |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
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US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
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US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
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US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
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US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
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US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
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US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
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US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
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US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
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US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
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US11152569B2 (en) * | 2017-11-30 | 2021-10-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | PCRAM structure with selector device |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
KR102133773B1 (ko) * | 2018-01-29 | 2020-07-15 | 한국생산기술연구원 | 유기금속 전구체를 이용한 윤활부품 박막 제조방법 |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
CN111699278B (zh) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | 通过循环沉积工艺在衬底上沉积含钌膜的方法 |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
US11549175B2 (en) | 2018-05-03 | 2023-01-10 | Lam Research Corporation | Method of depositing tungsten and other metals in 3D NAND structures |
KR20190128558A (ko) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조 |
TW202349473A (zh) | 2018-05-11 | 2023-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
WO2020002995A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
KR20210027265A (ko) | 2018-06-27 | 2021-03-10 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 막 및 구조체 |
KR20200002519A (ko) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
ES2684851B2 (es) * | 2018-07-27 | 2019-06-19 | Univ Madrid Politecnica | Metodo para obtener puntas sensoras de microscopia de fuerza atomica funcionalizadas mediante silanizacion por vapor activado, y las puntas obtenidas por dicho metodo |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
KR102231296B1 (ko) | 2018-10-11 | 2021-03-23 | 주식회사 메카로 | 유기금속 전구체 화합물 및 이를 이용하여 제조된 박막 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
EP3666783A1 (de) * | 2018-12-12 | 2020-06-17 | Umicore Ag & Co. Kg | Verfahren zur herstellung von bis(tert-butylimido)bis(dialkylamido)wolfram-verbindungen, bis(tert-butylimido)bis(dialkylamido)wolfram-verbindungen, verwendung einer bis(tert-butylimido)bis(dialkylamido)wolfram-verbindung und substrat |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (ja) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
TW202405220A (zh) | 2019-01-17 | 2024-02-01 | 荷蘭商Asm Ip 私人控股有限公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN113366144B (zh) | 2019-01-28 | 2023-07-07 | 朗姆研究公司 | 金属膜的沉积 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
JP2020136677A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
KR102638425B1 (ko) | 2019-02-20 | 2024-02-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 내에 형성된 오목부를 충진하기 위한 방법 및 장치 |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20210127262A (ko) | 2019-03-11 | 2021-10-21 | 램 리써치 코포레이션 | 몰리브덴-함유 막들의 증착을 위한 전구체들 |
JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP2021015791A (ja) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
JP2021019198A (ja) | 2019-07-19 | 2021-02-15 | エーエスエム・アイピー・ホールディング・ベー・フェー | トポロジー制御されたアモルファスカーボンポリマー膜の形成方法 |
TW202113936A (zh) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
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USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
CN115651026B (zh) * | 2022-10-11 | 2024-02-09 | 中山大学 | 一种ald前驱体钨配合物的制备方法 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09509288A (ja) * | 1994-11-30 | 1997-09-16 | マイクロン テクノロジー インコーポレイテッド | シリコン含有ソースガスを用いる窒化タングステン付着方法 |
JP2001081560A (ja) * | 1999-07-08 | 2001-03-27 | Air Prod And Chem Inc | 多元金属又は金属化合物層の成長のための方法及び組成物 |
WO2001099166A1 (en) * | 2000-06-08 | 2001-12-27 | Genitech Inc. | Thin film forming method |
JP2002094030A (ja) * | 2000-09-18 | 2002-03-29 | Tokyo Electron Ltd | 半導体装置およびその製造方法 |
US6539160B2 (en) * | 2000-10-27 | 2003-03-25 | Corning Cable Systems Llc | Optical fiber splicing and connecting assembly with coupler cassette |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI117944B (fi) * | 1999-10-15 | 2007-04-30 | Asm Int | Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi |
US6114242A (en) * | 1997-12-05 | 2000-09-05 | Taiwan Semiconductor Manufacturing Company | MOCVD molybdenum nitride diffusion barrier for Cu metallization |
US6200893B1 (en) | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
DE60125338T2 (de) | 2000-03-07 | 2007-07-05 | Asm International N.V. | Gradierte dünne schichten |
KR100403611B1 (ko) * | 2000-06-07 | 2003-11-01 | 삼성전자주식회사 | 금속-절연체-금속 구조의 커패시터 및 그 제조방법 |
JP3409290B2 (ja) | 2000-09-18 | 2003-05-26 | 株式会社トリケミカル研究所 | ゲート酸化膜形成材料 |
EP1772534A3 (en) | 2000-09-28 | 2007-04-25 | The President and Fellows of Harvard College | Tungsten-containing and hafnium-containing precursors for vapor deposition |
-
2003
- 2003-07-09 EP EP03764377A patent/EP1543177A1/en not_active Withdrawn
- 2003-07-09 AU AU2003248850A patent/AU2003248850A1/en not_active Abandoned
- 2003-07-09 CN CNA038190745A patent/CN1675402A/zh active Pending
- 2003-07-09 KR KR1020057000412A patent/KR20050028015A/ko not_active Application Discontinuation
- 2003-07-09 US US10/520,456 patent/US7560581B2/en active Active
- 2003-07-09 WO PCT/US2003/021281 patent/WO2004007796A1/en active Application Filing
- 2003-07-09 JP JP2004521556A patent/JP2005533178A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09509288A (ja) * | 1994-11-30 | 1997-09-16 | マイクロン テクノロジー インコーポレイテッド | シリコン含有ソースガスを用いる窒化タングステン付着方法 |
JP2001081560A (ja) * | 1999-07-08 | 2001-03-27 | Air Prod And Chem Inc | 多元金属又は金属化合物層の成長のための方法及び組成物 |
WO2001099166A1 (en) * | 2000-06-08 | 2001-12-27 | Genitech Inc. | Thin film forming method |
JP2002094030A (ja) * | 2000-09-18 | 2002-03-29 | Tokyo Electron Ltd | 半導体装置およびその製造方法 |
US6539160B2 (en) * | 2000-10-27 | 2003-03-25 | Corning Cable Systems Llc | Optical fiber splicing and connecting assembly with coupler cassette |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8755679B2 (en) | 2006-04-05 | 2014-06-17 | Horiba Stec, Co., Ltd. | Liquid material vaporizer |
JP2008120788A (ja) * | 2006-07-31 | 2008-05-29 | Rohm & Haas Electronic Materials Llc | 有機金属化合物 |
WO2012165124A1 (ja) * | 2011-05-27 | 2012-12-06 | 株式会社Adeka | 酸化モリブデンを含有する薄膜の製造方法、酸化モリブデンを含有する薄膜の形成用原料及びモリブデンアミド化合物 |
JP2012246531A (ja) * | 2011-05-27 | 2012-12-13 | Adeka Corp | 酸化モリブデンを含有する薄膜の製造方法、酸化モリブデンを含有する薄膜の形成用原料及びモリブデンアミド化合物 |
US9881796B2 (en) | 2011-05-27 | 2018-01-30 | Adeka Corporation | Method for manufacturing molybdenum oxide-containing thin film |
JP2014534952A (ja) * | 2011-09-27 | 2014-12-25 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | タングステンジアザブタジエン分子、その合成及びタングステン含有膜の堆積へのその使用 |
JP2016181687A (ja) * | 2015-03-24 | 2016-10-13 | ラム リサーチ コーポレーションLam Research Corporation | ハードマスクのための金属誘電体膜の蒸着 |
Also Published As
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US20060125099A1 (en) | 2006-06-15 |
US7560581B2 (en) | 2009-07-14 |
CN1675402A (zh) | 2005-09-28 |
AU2003248850A1 (en) | 2004-02-02 |
EP1543177A1 (en) | 2005-06-22 |
KR20050028015A (ko) | 2005-03-21 |
WO2004007796A1 (en) | 2004-01-22 |
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