TW202143304A - 用於在基板上形成層之方法、環繞式閘極p型金氧半導體場效電晶體、金屬-絕緣體-金屬金屬電極、vnand接點、及沉積系統 - Google Patents
用於在基板上形成層之方法、環繞式閘極p型金氧半導體場效電晶體、金屬-絕緣體-金屬金屬電極、vnand接點、及沉積系統 Download PDFInfo
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- TW202143304A TW202143304A TW110113900A TW110113900A TW202143304A TW 202143304 A TW202143304 A TW 202143304A TW 110113900 A TW110113900 A TW 110113900A TW 110113900 A TW110113900 A TW 110113900A TW 202143304 A TW202143304 A TW 202143304A
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- vanadium
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- tantalum
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- 238000000034 method Methods 0.000 title claims abstract description 116
- 239000000758 substrate Substances 0.000 title claims abstract description 77
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 33
- 239000002184 metal Substances 0.000 title claims abstract description 33
- 230000005669 field effect Effects 0.000 title claims abstract description 14
- 230000008021 deposition Effects 0.000 title description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 144
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- 229910052758 niobium Inorganic materials 0.000 claims abstract description 74
- 239000010955 niobium Substances 0.000 claims abstract description 74
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- 239000011733 molybdenum Substances 0.000 claims abstract description 72
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 71
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- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 69
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 67
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 63
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 62
- 239000010703 silicon Substances 0.000 claims abstract description 62
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 62
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 238000005137 deposition process Methods 0.000 claims abstract description 55
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- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 12
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- 239000005046 Chlorosilane Substances 0.000 claims description 5
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- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
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- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
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- 229910001928 zirconium oxide Inorganic materials 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
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- 241000894007 species Species 0.000 description 3
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- 239000011593 sulfur Substances 0.000 description 3
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
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- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
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- 150000004678 hydrides Chemical class 0.000 description 2
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- 101001053395 Arabidopsis thaliana Acid beta-fructofuranosidase 4, vacuolar Proteins 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
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- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
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- NBTOZLQBSIZIKS-UHFFFAOYSA-N methoxide Chemical compound [O-]C NBTOZLQBSIZIKS-UHFFFAOYSA-N 0.000 description 1
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- 229910052754 neon Inorganic materials 0.000 description 1
- LZRGWUCHXWALGY-UHFFFAOYSA-N niobium(5+);propan-2-olate Chemical group [Nb+5].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] LZRGWUCHXWALGY-UHFFFAOYSA-N 0.000 description 1
- ZTILUDNICMILKJ-UHFFFAOYSA-N niobium(v) ethoxide Chemical group CCO[Nb](OCC)(OCC)(OCC)OCC ZTILUDNICMILKJ-UHFFFAOYSA-N 0.000 description 1
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- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- 230000003071 parasitic effect Effects 0.000 description 1
- RPESBQCJGHJMTK-UHFFFAOYSA-I pentachlorovanadium Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[V+5] RPESBQCJGHJMTK-UHFFFAOYSA-I 0.000 description 1
- NFVUDQKTAWONMJ-UHFFFAOYSA-I pentafluorovanadium Chemical compound [F-].[F-].[F-].[F-].[F-].[V+5] NFVUDQKTAWONMJ-UHFFFAOYSA-I 0.000 description 1
- XQAGYOLLDSHDDY-UHFFFAOYSA-N pentane-2,4-dione;vanadium Chemical compound [V].CC(=O)CC(C)=O.CC(=O)CC(C)=O.CC(=O)CC(C)=O XQAGYOLLDSHDDY-UHFFFAOYSA-N 0.000 description 1
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- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- LFXVBWRMVZPLFK-UHFFFAOYSA-N trioctylalumane Chemical compound CCCCCCCC[Al](CCCCCCCC)CCCCCCCC LFXVBWRMVZPLFK-UHFFFAOYSA-N 0.000 description 1
- JQPMDTQDAXRDGS-UHFFFAOYSA-N triphenylalumane Chemical compound C1=CC=CC=C1[Al](C=1C=CC=CC=1)C1=CC=CC=C1 JQPMDTQDAXRDGS-UHFFFAOYSA-N 0.000 description 1
- CNWZYDSEVLFSMS-UHFFFAOYSA-N tripropylalumane Chemical compound CCC[Al](CCC)CCC CNWZYDSEVLFSMS-UHFFFAOYSA-N 0.000 description 1
- JBIQAPKSNFTACH-UHFFFAOYSA-K vanadium oxytrichloride Chemical compound Cl[V](Cl)(Cl)=O JBIQAPKSNFTACH-UHFFFAOYSA-K 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
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- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
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- C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/34—Nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/45525—Atomic layer deposition [ALD]
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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Abstract
所揭示者係一種用於沉積包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表之元素的層之方法及系統。此等層係沉積至一基板表面上。沉積製程可以是一循環沉積製程。可在其中併入此等層之例示性結構包括場效電晶體、VNAND單元、金屬-絕緣體-金屬結構、及動態隨機存取記憶體電容。
Description
本揭露大致上係關於半導體處理方法及系統之領域,且係在積體電路製造的領域中。具體地,揭示適於沉積包含釩、氮、及另一元素的層之方法及系統。
半導體裝置(諸如,例如互補式金氧半導體(complementary metal-oxide-semiconductor,CMOS)裝置)之縮放已導致積體電路之速度及密度的顯著改善。然而,習知的裝置縮放技術對未來技術節點(technology nodes)而言面對重大的挑戰。
例如,一個挑戰在於找出適於用作強勢縮放(aggressively scaled)的互補式金氧半導體裝置中之閘極電極的導電材料。可使用各種閘極材料(諸如,例如金屬,諸如氮化鈦層)。然而,在想要的功函數值(work function values)高於以氮化鈦層取得的值之一些情況下(例如在互補式金氧半導體裝置的P型金氧半場效電晶體(PMOS)區域中),所想要的係用於閘極電極之改善材料。具體地,此類材料可包括p型偶極移位層(p-dipole shifting layers),並可例如用於臨限電壓調諧(threshold voltage tuning)。
此外,在其他半導體裝置(諸如金屬-絕緣體-金屬(metal-insulator-metal,MIM)結構、動態隨機存取記憶體(DRAM)電容、及VNAND單元(VNAND cells))中仍存在對新式材料的需求。
本節提出之任何討論(包括問題及解決方案的討論)僅為了提供本揭露背景脈絡之目的而包括在本揭露中。此類討論不應視為承認資訊之任何或全部內容在完成本揭露時已知或以其他方式構成先前技術。
本揭露內容可以簡化形式介紹可在下文進一步詳述之一系列概念。本揭露內容並非意欲必然地鑑別所主張之標的之關鍵特徵或基本特徵,亦非意欲用以限制所主張之標的之範疇。
本揭露之各種實施例係關於沉積包含釩、氮、及另一元素的層之方法,關於使用此類方法所形成之結構及裝置,且關於用於執行此等方法、及/或用於形成此等結構及/或裝置之設備。此等層可用在各種應用中,包括功函數調整層及臨限電壓臨限調整層。例如,其等可用作p通道(p-channel metal)金氧半導體場效電晶體(metal oxide semiconductor field effect transistors,MOSFETS)中的偶極移位層。
因此,提供一種用於在一反應器室中於一基板上形成一層之方法。此方法包含應用沉積製程。此沉積製程包含提供一第一前驅物至此反應器室,此第一前驅物包含釩。此外,此沉積製程包含提供一第二前驅物至此反應器室,此第二前驅物包含選自由鉬、鉭、鈮、鋁、及矽組成之列表的一元素。此外,此沉積製程包含提供一反應物至此反應器室,此反應物包含氮。因此,在此基板上形成一層。此層包含釩。此外,此層包含選自由鉬、鉭、鈮、鋁、及矽組成之列表的此元素。同樣地,此層包含氮。
在一些實施例中,此第一前驅物、此第二前驅物、及此反應物係同時提供至此反應器室。
在一些實施例中,此第一前驅物、此第二前驅物、及此反應物係連續地提供至此反應器室。
在一些實施例中,此反應物包含氨及/或肼(hydrazine)。
在一些實施例中,此第一前驅物包含鹵化釩(vanadium halide)、氧鹵化釩(vanadium oxyhalide)、及釩有機金屬化合物(vanadium organometallic compound)中之一或多者。
在一些實施例中,此第一前驅物包含鹵化釩。
在一些實施例中,此第一前驅物包含VCl4
。
在一些實施例中,此第一前驅物包含β-二酮基釩(vanadium beta-diketonate)。
在一些實施例中,此第二前驅物包含鹵化物。
在一些實施例中,此第二前驅物包含氯化物。
在一些實施例中,此第二前驅物包含金屬有機化合物及/或氫化物。
在一些實施例中,此第二前驅物包含烷基鋁(aluminum alkyl),且此層包含鋁。
在一些實施例中,此第二前驅物包含三甲基鋁(trimethyl aluminum)。
在一些實施例中,此第二前驅物包含鹵化鋁(aluminum halide),且此層包含鋁。
在一些實施例中,此第二前驅物包含三氯化鋁(aluminum trichloride)。
在一些實施例中,此第二前驅物包含一鹵化鈮(niobium halide),且此層包含鈮。
在一些實施例中,此鹵化鈮係選自氯化鈮(niobium chloride)及溴化鈮(niobium bromide)。
在一些實施例中,此第二前驅物包含鹵化鉿(hafnium halide)或金屬有機鉿化合物(metalorganic hafnium compound),且此層包含鉿。
在一些實施例中,此第二前驅物包含氯化鉿(hafnium chloride)。
在一些實施例中,此第二前驅物係選自由4[(C2
H5
)(CH3
)N]Hf、[(CH2
CH3
)2
N]4
Hf、及[(CH3
)2
N]4
Hf組成的列表。
在一些實施例中,此第二前驅物包含鹵化鉬(molybdenum halide)及/或氧鹵化鉬(molybdenum oxyhalide),且此層包含鉬。
在一些實施例中,此第二前驅物係選自MoCl5
、MoO2
Cl2
、及MoOCl4
。
在一些實施例中,此第二前驅物包含矽烷(silane)及/或氯矽烷(chlorosilane),且此層包含矽。
在一些實施例中,第二前驅物係選自由SiCl4
、SiH2
Cl2
、Si2
Cl6
、Si3
H2
Cl6
、Si3
Cl8
、SiH4
、Si2
H6
、Si3
H8
、及SiH2
I2
組成的列表。
在一些實施例中,此第二前驅物包含鹵化鉭(tantalum halide)及/或金屬有機鉭化合物(metalorganic tantalum compound),且此層包含鉭。
在一些實施例中,此第二前驅物係選自由TaCl5
、TaBr5
、及Ta(N(CH3
)2
)5
組成的列表。
在一些實施例中,此第二前驅物係鹵化鈦(tantalum halide),且此層包含鈦。
在一些實施例中,此第二前驅物係TiCl4
。
在一些實施例中,此沉積製程包含一化學氣相沉積製程。
在一些實施例中,此沉積製程包含一循環化學氣相沉積製程。
在一些實施例中,此第一前驅物及此第二前驅物係以前驅物脈衝同時提供至此反應器室,且此反應物係以反應物脈衝提供至此反應器室。
在一些實施例中,此等前驅物脈衝及此等反應物脈衝係藉由吹掃步驟來分開。
在一些實施例中,此第一前驅物及此第二前驅物係持續地提供至此反應器室,且此反應物係以反應物脈衝提供至此反應器室。
在一些實施例中,此等反應物脈衝係藉由吹掃步驟來分開。
在一些實施例中,此反應物係持續地提供至此反應器室。
在一些實施例中,此第一前驅物係以第一前驅物脈衝提供至此反應器室,且此第二前驅物係以第二前驅物脈衝提供至此反應器室。
在一些實施例中,此等第一前驅物脈衝及此等第二前驅物脈衝係藉由吹掃步驟來分開。
在一些實施例中,此第一前驅物及此反應物係持續地提供至此反應器室,且此第二前驅物係以第二前驅物脈衝提供至此反應器室。
在一些實施例中,此等第二前驅物脈衝係藉由吹掃步驟來分開。
在一些實施例中,此第二前驅物及此反應物係持續地提供至此反應器室,且此第一前驅物係以第一前驅物脈衝提供至此反應器室。
在一些實施例中,此等第一前驅物脈衝係藉由吹掃步驟來分開。
在一些實施例中,此提供此第一前驅物至此反應器室之步驟、及此提供此第二前驅物至此反應器室之步驟係藉由一吹掃步驟來分開。
在一些實施例中,此提供此第二前驅物至此反應器室之步驟、及此提供此反應物至此反應器室之步驟係藉由一吹掃步驟來分開。
在一些實施例中,此提供此反應物至此反應器室之步驟、及此提供此第一前驅物至此反應器室之步驟係藉由一吹掃步驟來分開。
在一些實施例中,此沉積製程包含一熱製程。
在一些實施例中,此層具有從至少0.2奈米(nm)到至多5奈米的一厚度。
在一些實施例中,此基板係一單晶矽晶圓(monocrystalline silicon wafer)。
在一些實施例中,提供第一前驅物至反應器室之步驟及提供第二前驅物至反應器室之步驟係藉由吹掃步驟來分開。
在一些實施例中,此提供此第二前驅物至此反應器室之步驟、及此提供此反應物至此反應器室之步驟係藉由一吹掃步驟來分開。
在一些實施例中,此提供此反應物至此反應器室之步驟、及此提供此第一前驅物至此反應器室之步驟係藉由一吹掃步驟來分開。
本文進一步描述一種環繞式閘極P型金氧半導體(pmos)場效電晶體,其包含一臨限電壓調諧層。此臨限電壓調諧層係根據如本文所述之用於在一反應器室中於一基板上形成一層之方法形成。
在一些實施例中,此臨限電壓調諧層係定位在一氧化矽層與一高介電值介電層之間。
在一些實施例中,一高介電值介電層(high-k dielectric layer)係定位在一氧化矽層與此臨限電壓調諧層之間。
本文進一步描述一種金屬-絕緣體-金屬電極,其包含經由如本文所述之用於在一反應器室中於一基板上形成一層之方法沉積的一層。
本文進一步描述一種VNAND(垂直NAND快閃記憶體)接點(contact),其包含經由如本文所述之用於在一反應器室中於一基板上形成一層之方法沉積的一層。
進一步描述一種包含一或多個反應室之系統。此系統進一步包含一第一前驅物氣體源,其包含一第一前驅物。此第一前驅物包含釩。此第二前驅物氣體源包含一第二前驅物。此第二前驅物包含選自由鉬、鉭、鈮、鋁、及矽組成之列表的一元素。此系統進一步包含一反應物氣體源,其包含一反應物。此反應物含有氮。此系統進一步包含一控制器。此控制器係配置以控制進入此一或多個反應室中之至少一者的氣體流,以經由如本文所述之用於在一反應器室中於一基板上形成一層之方法形成上覆於一基板表面的一層。如此形成之此層包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的此元素。
本文進一步描述一種用於蝕刻一可蝕刻層之方法,此可蝕刻層上覆於包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的一元素之一層。此方法包含使此可蝕刻層暴露至一蝕刻劑之一步驟,為此,與包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的一元素之此層相比,此可蝕刻層具有一較高蝕刻率。
在一些實施例中,已經由如本文所述之用於在一反應器室中於一基板上形成一層之方法沉積包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的一元素之此層。
所屬技術領域中具有通常知識者將從已參照隨附圖式之某些實施例的下列詳細描述輕易明白這些及其他實施例。本揭露並未受限於任何所揭示具體實施例。
下文所提供之方法、結構、裝置、及系統之例示性實施例的描述僅係例示性,且僅係意欲用於說明之目的;下列描述並非意欲限制本揭露或申請專利範圍之範疇。此外,列舉具有所陳述特徵之多個實施例不意欲排除具有額外特徵之其他實施例、或納入所陳述特徵之不同組合的其他實施例。例如,各種實施例係提出作為例示性實施例,並可列舉於附屬項中。除非另有註明,例示性實施例或其等之組件可組合或可彼此分開應用。
如下文更詳細描述,本揭露之各種實施例提供用於形成結構(諸如閘極電極結構)之方法。例如,例示性方法可用以形成互補式金氧半導體裝置或此類裝置的部分。儘管如此,且除非另有註明,本揭露不必然受限於此類實例。
在本揭露中,「氣體(gas)」可包括在常溫及常壓(normal temperature and pressure,NTP)下為氣體之材料、汽化固體、及/或汽化液體,並可取決於上下文由單一氣體或氣體混合物構成。除了製程氣體以外的氣體(亦即,未藉由氣體分配總成、其他氣體分配裝置或類似者而引入的氣體)可用於例如密封反應空間,且可包括諸如稀有氣體的密封氣體。在一些情況下,用語「前驅物(precursor)」可指參與生成另一化合物的化學反應之化合物,且具體係指構成膜基質(film matrix)或膜的主要骨架之化合物;用語「反應物(reactant)」可與用語前驅物互換地使用。用語「惰性氣體(inert gas)」可指不參與化學反應及/或不會在可察覺的程度上變為膜基質之一部分的氣體。例示性的惰性氣體包括氦、氬、及其等之任何組合。在一些情況下,惰性氣體可包括氮及/或氫。
如本文所使用,用語「基板(substrate)」可指可用以形成或在其上可形成裝置、電路、或膜之任何下伏材料。基板可包括塊材(bulk material)(諸如矽(例如單晶矽))、其他第四族(Group IV)材料(諸如鍺)、或其他半導體材料(諸如第二族到第六族(Group II-VI)或第三族到第五族(Group III-V)半導體材料),並可包括上覆(overlying)或下伏(underlying)於塊材的一或多層。進一步地,基板可包括各種特徵,諸如形成在基板之一層的至少一部分之內或之上的凹部、突起部、及類似者。舉實例而言,基板可包括塊材半導體材料及上覆於塊材半導體材料之至少一部分的絕緣或介電材料層。
如本文中所使用,用語「膜 (film)」及/或「層 (layer)」可指任何連續或不連續的結構及材料(諸如,藉由本文所揭示之方法沉積之材料)。例如,膜及/或層可包括二維材料、三維材料、奈米粒子(nanoparticles)、部分或完整分子層、或部分或完整原子層、或原子及/或分子團簇(clusters)。膜或層可部分或完整地由基板表面上的複數個分散原子組成及/或埋置在基板中及/或埋置在製造於此基板上的裝置中。膜或層可包含具有針孔(pinholes)及/或隔絕的島狀物(isolated islands)之材料或層。膜或層可以是至少部分連續的。
如本文中所使用,「結構(structure)」可以是或可包括如本文所述之基板。結構可包括上覆於基板之一或多個層(諸如,根據本文所述之方法形成的一或多個層)。裝置部分可以是或包括結構。
如本文中所使用,用語「沉積製程(deposition process)」可指將前驅物(及/或反應物)引入反應室中,以在基板上方沉積層。「循環沉積製程(Cyclical deposition process)」係「沉積製程」的實例。
用語「循環沉積製程(cyclic deposition process/cyclical deposition process)」可指將前驅物(及/或反應物)循序引入反應室中,以在基板上方沉積層,並包括處理技術(諸如原子層沉積(atomic layer deposition,ALD)、循環化學氣相沉積(cyclical chemical vapor deposition,cyclical CVD)、及包括原子層沉積成分及循環化學氣相沉積成分之混合式循環沉積製程)。
用語「原子層沉積(atomic layer deposition)」可指氣相沉積製程,其中沉積循環(一般係複數個接續的沉積循環)係在製程室中實施。當使用前驅物/反應性氣體及吹掃(例如惰性載體)氣體的交替脈衝執行時,如本文中所使用之用語原子層沉積亦意指包括由相關用語指定的製程,諸如化學氣相原子層沉積(chemical vapor atomic layer deposition)、原子層磊晶(atomic layer epitaxy,ALE)、分子束磊晶(molecular beam epitaxy,MBE)、氣體源分子束磊晶(gas source MBE)、或有機金屬分子束磊晶(organometallic MBE)、及化學束磊晶(chemical beam epitaxy)。
通常,對原子層沉積製程而言,在各循環期間,前驅物係引入反應室且經化學吸附至沉積表面(例如,可包括來自先前原子層沉積循環之先前經沉積材料或其他材料的基板表面),並形成不易與額外前驅物起反應(亦即,自限式反應(self-limiting reaction))的材料單層或次單層。其後,可隨後將反應物(例如,另一前驅物或反應氣體)引入至製程室中,以用於在沉積表面上將經化學吸附之前驅物轉化為想要的材料。反應物能夠進一步與前驅物起反應。可在一或多個循環期間(例如在各循環之各步驟期間)利用吹掃步驟來從製程室移除任何過量前驅物、及/或從反應室移除任何過量反應物、及/或反應副產物。
如本文中所使用,用語「吹掃(purge)」可指在與彼此起反應的兩個氣體脈衝之間提供惰性或實質上惰性的氣體至反應器室的程序。例如,可在前驅物脈衝與反應物脈衝之間提供吹掃(例如使用氮氣),從而避免或至少最小化前驅物與反應物之間的氣相交互作用。應瞭解,吹掃可在時間上或在空間上之任一者或兩者來實行。例如,在時間吹掃的情況下,可例如在時間序列中使用一吹掃步驟,此時間序列係提供一第一前驅物至一反應器室、提供一吹掃氣體至此反應器室、及提供一第二前驅物至此反應器室,其中在其上沉積一層之此基板並未移動。例如,在空間吹掃的情況下,一吹掃步驟可採取下列形式:從持續供應此第一前驅物之一第一位置移動一基板、藉由一吹掃氣體幕(gas curtain)、至持續供應一第二前驅物之一第二位置。
如本文中所使用,「前驅物(precursor)」包括氣體或材料,其可變為氣態且其可由包括可在如本文所述之沉積製程期間併入之元素的化學式表示。
用語「反應物(reactant)」可指氣體或材料,其可變為氣態且其可由包括氮的化學式表示。在一些情況下,化學式包括氮及氫。在一些情況下,氮反應物不包括雙原子氮。
進一步地,在本揭示中,變數之任兩個數字可構成變數之可工作範圍,且所指示之任何範圍可包括或排除端點。額外地,所指示的變數之任何數值(不管此等數值是否以「約」來指示)可指精確值或近似值並包括等效值,且可指平均值、中間值、代表值、多數值或類似者。進一步地,在本揭露中,於一些實施例中,用語「包括(including)」、「由……構成(constituted by)」、及「具有(having)」係獨立地指「一般或廣泛地包含(typically or broadly comprising)」、「包含(comprising)」、「基本上由……組成(consisting essentially of)」、或「由……組成(consisting of)」。
在本揭露中,於一些實施例中,任何已定義之意義不必然排除尋常及慣例意義。
本文提供一種用於在一反應器室中於一基板上形成一層之方法。此方法包含應用沉積製程。在一些實施例中,沉積製程包含化學氣相沉積製程。在一些實施例中,沉積製程包含循環沉積製程。在一些實施例中,製程包含循環化學氣相沉積製程。額外或替代地,循環沉積製程可包括原子層沉積製程。在一些實施例中,循環沉積製程具有化學氣相沉積及原子層製程兩者的特性,亦即,循環沉積製程可以是混合式循環製程。在一些實施例中,沉積製程包含熱製程(thermal process),亦即,不使用電漿活化物種的製程。
沉積製程包含提供第一前驅物至反應器室、提供第二前驅物至反應器室、及提供反應物至反應器室。第一前驅物包含釩:第二前驅物包含選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素;且反應物包含氮。因此,在基板上形成層。如此形成的層包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素。同樣地,此層包含氮。例如,針對功函數調諧、應力管理、及電阻率調諧的目的,根據本方法形成的層係高度有利的。
在一些實施例中,此第一前驅物、此第二前驅物、及此反應物係同時提供至此反應器室。具體地,第一前驅物、第二前驅物、及反應物可連續地提供至反應器室。替代地,第一前驅物、第二前驅物、及反應物可不連續地提供至反應器室。
本文描述循環沉積製程的各種變體。因此,在一些實施例中,第一前驅物及第二前驅物係以前驅物脈衝同時提供至反應器室,且反應物係以反應物脈衝提供至反應器室。可選地,前驅物脈衝及反應物脈衝係藉由吹掃步驟來分開。在一些實施例中,此第一前驅物及此第二前驅物係持續地提供至此反應器室,且此反應物係以反應物脈衝提供至此反應器室。可選地,反應物脈衝係藉由吹掃步驟來分開。在一些實施例中,此反應物係持續地提供至此反應器室。在一些實施例中,此第一前驅物係以第一前驅物脈衝提供至此反應器室,且此第二前驅物係以第二前驅物脈衝提供至此反應器室。可選地,第一前驅物脈衝及第二前驅物脈衝係藉由吹掃步驟來分開。在一些實施例中,第一前驅物及反應物係持續地提供至反應器室。可選地,第二前驅物係以第二前驅物脈衝提供至反應器室。可選地,第二前驅物脈衝係藉由吹掃步驟來分開。在一些實施例中,此第二前驅物及此反應物係持續地提供至此反應器室,且此第一前驅物係以第一前驅物脈衝提供至此反應器室。可選地,第一前驅物脈衝係藉由吹掃步驟來分開。在一些實施例中,提供第一前驅物至反應器室之步驟、及提供第二前驅物至反應器室之步驟係藉由吹掃步驟來分開。在一些實施例中,此提供此第二前驅物至此反應器室之步驟、及此提供此反應物至此反應器室之步驟係藉由一吹掃步驟來分開。在一些實施例中,此提供此反應物至此反應器室之步驟、及此提供此第一前驅物至此反應器室之步驟係藉由一吹掃步驟來分開。
在一些實施例中,沉積製程係循環沉積製程,且循環沉積製程包含在其中將第一前驅物提供至反應室之第一前驅物步驟,循環沉積製程包含在其中將第二前驅物提供至反應室之第二前驅物步驟,且循環沉積製程包含在其中將反應物提供至沉積室之反應物步驟。應瞭解,前述步驟的整體包含一個循環。換言之,可將提供第一前驅物至反應器室、提供第二前驅物至反應器室、提供反應物至反應器室、及可選地在一或多個吹掃步驟期間提供一或多個吹掃氣體至反應器室的序列視為構成單一循環。如本文所述之方法中所包含的循環總數尤其取決於所想要的總層厚度。在一些實施例中,此方法包含從至少1個循環到至多100個循環、或從至少2個循環到至多80個循環、或從至少3個循環到至多70個循環、或從至少4個循環到至多60個循環、或從至少5個循環到至多50個循環、或從至少10個循環到至多40個循環、或從至少20個循環到至多30個循環。在一些實施例中,此方法包含至多100個循環、或至多90個循環、或至多80個循環、或至多70個循環、或至多60個循環、或至多50個循環、或至多40個循環、或至多30個循環、或至多20個循環、或至多10個循環、或至多5個循環、或至多4個循環、或至多3個循環、或至多2個循環、或單循環。
在一些實施例中,如此形成的層具有從至少0.2奈米到至多5奈米、或從至少0.3奈米到至多4奈米、或從至少0.4奈米到至多3奈米、或從至少0.5奈米到至多2奈米、或從至少0.7奈米到至多1.5奈米、或至少0.9奈米到至多1.0奈米的厚度。
在一些實施例中,如此形成的層具有至多5.0奈米的厚度、或至多4.0奈米的厚度、或至多3.0奈米的厚度、或至多2.0奈米的厚度、或至多1.5奈米的厚度、或至多1.0奈米的厚度、或至多0.8奈米的厚度、或至多0.6奈米的厚度、或至多0.5奈米的厚度、或至多0.4奈米的厚度、或至多0.3奈米的厚度、或至多0.2奈米的厚度、或至多0.1奈米的厚度。
在一些實施例中,在小於800°C、或至少20°C到至多800°C、或至少100°C到至多400°C、或至少20°C到至多300°C、或至少20°C到至多200°C的基板溫度下沉積層。在一些實施例中,在至少100°C到至多500°C、或至少150°C到至多450°C、或至少200°C到至多400°C、或至少250°C到至多350°C、或至少275°C到至多325°C、或至少250°C到至多450°C、或至少400°C到至多450°C、或至少300°C到至多400°C的基板溫度下沉積層。
在一些實施例中,在小於760托耳(Torr)、或至少0.2托耳到至多760托耳、或至少1托耳到至多100托耳、或至少1托耳到至多10托耳的壓力下沉積層。在一些實施例中,在至多10.0托耳的壓力下、或在至多5.0托耳的壓力下、或在至多3.0托耳的壓力下、或在至多2.0托耳的壓力下、或在至多1.0托耳的壓力下、或在至多0.1托耳的壓力下、或在至多10-2托耳的壓力下、或在至多10-3托耳的壓力下、或在至多10-4托耳的壓力下、或在至多10-5托耳的壓力下沉積層。
單晶矽晶圓可以是合適的基板。其他基板亦可以是合適的(例如,單晶鍺晶圓、砷化鎵晶圓、石英、藍寶石、玻璃、鋼、鋁、絕緣體上覆矽(silicon-on-insulator)基板、塑膠等)。
本方法的一個優點在於允許形成具有高度可調諧性質之包含釩及氮化物的層。可調諧之例示性性質包括電子功函數(electron work function)、應力、及電阻率。例如,本揭露的層可用作P型金氧半場效電晶體(PMOSFET)中的閘極堆疊功函數調諧金屬(gate stack work function tuning metals)。額外或替代地,其等可用在金屬-絕緣體-金屬金屬電極及/或VNAND接點中。
在一些實施例中,層的釩含量係從至少1.0原子百分比(atomic percent)到至多99.0原子百分比、或從至少3.0原子百分比到至多97.0原子百分比、或從至少5.0原子百分比到至多95.0原子百分比、或從至少10.0原子百分比到至多90.0原子百分比、或從至少20.0原子百分比到至多80.0原子百分比、或從至少30.0原子百分比到至多70.0原子百分比、或從至少40.0原子百分比到至多60.0原子百分比。
在一些實施例中,層的氮含量係從至少1.0原子百分比到至多99.0原子百分比、或從至少3.0原子百分比到至多97.0原子百分比、或從至少5.0原子百分比到至多95.0原子百分比、或從至少10.0原子百分比到至多90.0原子百分比、或從至少20.0原子百分比到至多80.0原子百分比、或從至少30.0原子百分比到至多70.0原子百分比、或從至少40.0原子百分比到至多60.0原子百分比。
在一些實施例中,層的鉬含量係從至少1.0原子百分比到至多99.0原子百分比、或從至少3.0原子百分比到至多97.0原子百分比、或從至少5.0原子百分比到至多95.0原子百分比、或從至少10.0原子百分比到至多90.0原子百分比、或從至少20.0原子百分比到至多80.0原子百分比、或從至少30.0原子百分比到至多70.0原子百分比、或從至少40.0原子百分比到至多60.0原子百分比。
在一些實施例中,層的鉭含量係從至少1.0原子百分比到至多99.0原子百分比、或從至少3.0原子百分比到至多97.0原子百分比、或從至少5.0原子百分比到至多95.0原子百分比、或從至少10.0原子百分比到至多90.0原子百分比、或從至少20.0原子百分比到至多80.0原子百分比、或從至少30.0原子百分比到至多70.0原子百分比、或從至少40.0原子百分比到至多60.0原子百分比。
在一些實施例中,層的鈮含量係從至少1.0原子百分比到至多99.0原子百分比、或從至少3.0原子百分比到至多97.0原子百分比、或從至少5.0原子百分比到至多95.0原子百分比、或從至少10.0原子百分比到至多90.0原子百分比、或從至少20.0原子百分比到至多80.0原子百分比、或從至少30.0原子百分比到至多70.0原子百分比、或從至少40.0原子百分比到至多60.0原子百分比。
在一些實施例中,層的鋁含量係從至少1.0原子百分比到至多99.0原子百分比、或從至少3.0原子百分比到至多97.0原子百分比、或從至少5.0原子百分比到至多95.0原子百分比、或從至少10.0原子百分比到至多90.0原子百分比、或從至少20.0原子百分比到至多80.0原子百分比、或從至少30.0原子百分比到至多70.0原子百分比、或從至少40.0原子百分比到至多60.0原子百分比。
在一些實施例中,層的矽含量係從至少1.0原子百分比到至多99.0原子百分比、或從至少3.0原子百分比到至多97.0原子百分比、或從至少5.0原子百分比到至多95.0原子百分比、或從至少10.0原子百分比到至多90.0原子百分比、或從至少20.0原子百分比到至多80.0原子百分比、或從至少30.0原子百分比到至多70.0原子百分比、或從至少40.0原子百分比到至多60.0原子百分比。
在一些實施例中,層包含釩、及氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的二或更多個元素。例如,層可以前述濃度的任一組合包含這些成分。
在一些實施例中,層包含釩、及氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的三或更多個元素。例如,層可以前述濃度的任一組合包含這些成分。
在一些實施例中,層包含釩、及氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的四或更多個元素。例如,層可以前述濃度的任一組合包含這些成分。
在一些實施例中,層包含釩、及氮、鉬、鉭、鈮、鋁、及矽。例如,層可以前述濃度的任一組合包含這些成分。
在一些實施例中,本循環方法之步驟中的一或多者係藉由吹掃步驟來分開。因此,在一些實施例中,提供第一前驅物至反應器室之步驟、及提供第二前驅物至反應器室之步驟係藉由吹掃步驟來分開。額外或獨立地,提供第二前驅物至反應器室之步驟、及提供反應物至反應器室之步驟可藉由吹掃步驟來分開。額外或獨立地,提供反應物至反應器室之步驟、及提供第一前驅物至反應器室之步驟可藉由吹掃步驟來分開。在一些實施例中,提供第一前驅物至反應器室的步驟、及提供第二前驅物至反應器室的步驟係藉由吹掃步驟來分開,提供第二前驅物至反應器室的步驟、及提供反應物至反應器室的步驟係藉由吹掃步驟來分開,且提供反應物至反應器室的步驟、及提供第一前驅物至反應器室的步驟係藉由吹掃步驟來分開。在不同脈衝之間提供吹掃步驟允許最小化前驅物、及/或反應物之間的寄生反應(parasitic reactions)。
在下列段落中,針對1公升之反應器室體積及針對300毫米(mm)晶圓給定程序條件。所屬技術領域中具有通常知識者瞭解這些值可輕易地擴展至其他反應器室體積及晶圓大小。
在一些實施例中,前驅物及/或反應物係由載體氣體所挾帶。在一些實施例中,載體氣體係以至少0.2到至多2.0每分鐘標準公升數(slpm)、或至少0.3到至多1.5每分鐘標準公升數、或至少0.4到至多1.0每分鐘標準公升數、或至少0.5到至多0.7每分鐘標準公升數之流量率提供。在一些實施例中,N2
係用作載體氣體。在一些實施例中,稀有氣體係用作載體氣體。合適的稀有氣體包括He、Ne、Ar、及Xe。
在一些實施例中,吹掃步驟的持續時間係從至少0.025秒到至多2.0秒、或從至少0.05秒到至多0.8秒、或從至少0.1秒到至多0.4秒、或從至少0.2秒到至多0.3秒。
供應第一前驅物至反應器室的週期期間可稱為第一前驅物脈衝。供應第二前驅物至反應器室的週期期間可稱為第二前驅物脈衝。供應反應物至反應器室的週期期間可稱為反應物脈衝。
在一些實施例中,第一前驅物脈衝、第二前驅物脈衝、及/或反應物脈衝的持續時間係從至少0.25秒到至多4.0秒、或從至少0.5秒到至多2.0秒、或從至少1.0秒到至多1.5秒。
在一些實施例中,本方法包含從至少10個到至多50個沉積循環、或從至少2個到至多40個沉積循環、或從至少3個到至多30個沉積循環、或從至少4個到至多20個沉積循環、或從至少5個到至多15個沉積循環、或從至少7個到至多13個沉積循環、或從至少9個到至多11個沉積循環。在一些實施例中,本方法包含至多50個沉積循環、或至多40個沉積循環、或至多30個沉積循環、或至多20個沉積循環、或至多15個沉積循環、或至多13個沉積循環、或至多11個沉積循環、或至多9個沉積循環、或至多7個沉積循環、或至多5個沉積循環、或至多4個沉積循環、或至多3個沉積循環、或至多2個沉積循環、或1個沉積循環。沉積循環的數目越多,沉積層的厚度越厚,其他全部相等。
例示性反應物可選自氨(NH3
)、肼(N2
H4
)、其他含氮及氫之氣體(例如氮氣及氫氣之混合物)、及類似者中之一或多者。反應物可包括氮及氫或由氮及氫組成。在一些情況下,反應物不包括雙原子氮。在一些實施例中,此反應物包含氨及/或肼。在一些實施例中,反應物包含氨。在一些實施例中,反應物包含肼。在一些實施例中,反應物包含氨及肼。
在一些實施例中,此第一前驅物包含鹵化釩、氧鹵化釩、及釩有機金屬化合物中之一或多者 因此,在一些實施例中,第一前驅物包含鹵化釩。在一些實施例中,第一前驅物包含氧鹵化釩。在一些實施例中,第一前驅物包含氧氯化釩。在一些實施例中,第一前驅物包含釩醇鹽(vanadium alkoxide)。在一些實施例中,第一前驅物包含氧化三乙氧基釩(V)(Vanadium(V) oxytriethoxide)。在一些實施例中,第一前驅物包含氧化三丙氧基釩(V)(Vanadium(V) oxytripropoxide)。在一些實施例中,第一前驅物包含釩有機金屬化合物。在一些實施例中,此第一前驅物包含VCl4
。在一些實施例中,此第一前驅物包含β-二酮基釩(vanadium beta-diketonate)。在一些實施例中,第一前驅物包含乙醯丙酮釩(III)(Vanadium(III) acetylacetonate)。
在一些實施例中,第一前驅物可包括鹵化釩、氧鹵化釩、β-二酮基釩化合物、環戊二烯基釩(vanadium cyclopentadienyl compound)化合物、釩醇鹽化合物、二烷基醯胺基釩化合物、或類似者。
舉具體實例而言,鹵化釩可選自氟化釩、氯化釩、溴化釩、及碘化釩中之一或多者。鹵化釩可僅包括釩及一或多個鹵素(例如四氯化釩或類似者)。氧鹵化釩可選自氧鹵化釩之一或多者,諸如氧氟化釩、氧氯化釩、氧溴化釩及氧碘化釩之一或多者。氧鹵化釩可僅包括釩、氧、及一或多個鹵化物。舉實例而言,鹵化釩及氧鹵化釩可選自包括VCl4
、VBr4
、VI4
、VOCl4
、VOBr3
、VOI3
(分別名為四氯化釩、四溴化釩、四碘化釩、氧三氯化釩、氧三溴化釩、及氧三碘化釩)中之一或多者組成的群組。例如,第一前驅物可包含VCl4
。
例示性β-二酮基釩化合物包括VO(acac)2
、VO(thd)2
、V(acac)3
、V(thd)3
(分別名為氧代雙(2,4-戊二酮基)釩(IV)(oxobis(2,4-pentanedionato)vanadium(IV))、氧代雙(2,2,6,6-四甲基-3,5-庚二酮基)釩(IV)(oxobis(2,2,6,6-tetramethyl-3,5-hepanedionato)vanadium(IV))、三(2,4-戊二酮基)釩(IV)(tris(2,4-pentanedionato)vanadium(IV))、及三(2,2,6,6-四甲基-3,5-庚二酮基)釩(IV)(tris(2,2,6,6-tetramethyl-3,5-hepanedionato)vanadium(IV)))、及類似者。
例示性環戊二烯基釩化合物包括VCp2
Cl2
、VCp2
、VCp2
(CO)4
(分別名為雙氯雙(環戊二烯基)釩(IV)(bischlorobis(cyclopentdienyl)vanadium(IV))、雙(環戊二烯基)釩(II)(bis(cyclopentadienyl)vanadium(II))、及環戊二烯基釩四羰基(cyclopentadienylvanadium tetracarbonyl))。額外的例示性環戊二烯基釩化合物包括這些化合物的變體,其中Cp係未經取代或承載一或多個烷基(例如MeCp、EtCp、iPrCp、及類似者)。
例示性釩醇鹽化合物包括V(OMe)4
、V(OEt)4
、V(OiPr)4
、V(OtBu)4
、VO(OMe)3
、VO(OEt)3
、VO(OiPr)3
、及VO(OtBu)3
(分別名為四(甲氧基)釩(IV)(tetrakis(methoxy)vanadium(IV))、四(乙氧基)釩(IV)(tetrakis(ethoxy)vanadium(IV))、四(異丙氧基)釩(IV)(tetrakis(isopropoxy)vanadium(IV))、四(第三丁氧基)釩(IV)(tetrakis(t-butoxy)vanadium(IV))、氧代三(甲氧基)釩(IV)(oxotris(methoxy)vanadium(IV))、氧代三(乙氧基)釩(IV)(oxotris(ethoxy)vanadium(IV))、氧代三(異丙氧基)釩(IV)(oxotris(isopropoxy)vanadium(IV))、及氧代三(第三丁氧基)釩(IV)(oxotris(t-butoxy)vanadium(IV)))。額外的釩醇鹽化合物包括這些化合物的變體,其中使用其他烷氧基配位基(alkoxy ligands)。
例示性二烷基醯胺基釩化合物包括V(NMe2
)4
、V(NEt2
)4
、及V(NEtMe)4
(分別名為四(二甲醯胺基)釩(IV)(tetrakis(dimethylamido)vanadium(IV))、四(二乙醯胺基)釩(IV)(tetrakis(diethylamido)vanadium(IV))、及四(乙甲醯胺基)釩(IV)(tetrakis(ethylmethylamido)vanadium(IV)))。
相對於使用其他前驅物(諸如釩金屬有機前驅物)之方法,使用鹵化釩前驅物可以是有利的,因為鹵化釩前驅物可相對便宜,可得出具有較低雜質(諸如碳)濃度的釩層;及/或相較於使用金屬有機或其他釩前驅物的製程,使用此類前驅物的製程可更加受控(controllable)。進一步地,可在無電漿輔助以形成激發物種的情況下使用此類反應物。此外,與使用有機金屬釩前驅物的方法相較,使用鹵化釩的製程可更容易放大規模。在一些實施例中,例如,當所想要的是最小化或避免蝕刻經暴露的介電層(例如高介電值介電層)時,使用無鹵化物前驅物可以是有利的。
在一些實施例中,此第二前驅物包含鹵化物。在一些實施例中,第一前驅物包含鹵化物且第二前驅物包含鹵化物。在一些實施例中,第一前驅物係鹵化物且第二前驅物係鹵化物。在一些實施例中,此第二前驅物包含氯化物。在一些實施例中,第二前驅物係氯化物。在一些實施例中,第一前驅物及第二前驅物包含鹵化物。在一些實施例中,第一前驅物及第二前驅物包含氯化物。
在一些實施例中,第二前驅物包含金屬有機化合物。在一些實施例中,第二前驅物包含氫化物。在一些實施例中,第二前驅物包含醇鹽(alkoxide)。在一些實施例中,第二前驅物包含甲醇鹽(methoxide)。
在一些實施例中,此第二前驅物包含鹵化鋁,且此層包含鋁。在一些實施例中,此第二前驅物包含三氯化鋁。
在一些實施例中,第二前驅物包含烷基鋁,且所沉積的層包含鋁。在一些實施例中,此第二前驅物包含三甲基鋁(trimethyl aluminum)。在一些實施例中,第二前驅物包含三乙基鋁(triethyl aluminum)。在一些實施例中,第二前驅物包含三丙基鋁(Tripropylaluminum)。在一些實施例中,第二前驅物包含三異丁基鋁(triisobutylaluminum)。在一些實施例中,第二前驅物包含三辛基鋁(trioctylaluminum)。在一些實施例中,第二前驅物包含三苯基鋁(triphenylaluminum)。
在一些實施例中,第二前驅物包含鈮前驅物,且層包含鈮。在一些實施例中,鈮前驅物包含鹵化鈮。在一些實施例中,此鹵化鈮係選自氯化鈮及溴化鈮。
在一些實施例中,第二前驅物包含鈮有機金屬化合物,且層包含鈮。在一些實施例中,鈮有機金屬化合物係鈮醇鹽。在一些實施例中,鈮醇鹽係乙醇鈮(V)(Niobium(V) ethoxide)。在一些實施例中,鈮醇鹽係異丙醇鈮。在一些實施例中,鈮醇鹽係異丁醇鈮(niobium isobutoxide)。
在一些實施例中,第二前驅物包含鉿前驅物。在一些實施例中,鉿前驅物包含鹵化鉿或金屬有機鉿化合物,且層包含鉿。在一些實施例中,第二前驅物包含鹵化鉿。在一些實施例中,鹵化鉿包含四氯化鉿。在一些實施例中,鉿前驅物包含四溴化鉿。在一些實施例中,鉿前驅物包含金屬有機鉿化合物。在一些實施例中,金屬有機鉿化合物係烷醯胺鉿。在一些實施例中,鉿化合物係選自由[(C2
H5
)(CH3
)N]4
Hf、[(CH2
CH3
)2
N]4
Hf、及[(CH3
)2
N]4
Hf組成的列表。在一些實施例中,鉿化合物係[(C2
H5
)(CH3
)N]4
Hf。在一些實施例中,鉿化合物係[(CH2
CH3
)2
N]4
Hf。在一些實施例中,鉿化合物係 [(CH3
)2
N]4
Hf。較佳地,鉿前驅物係與作為反應物的NH3
一起使用。
在一些實施例中,第二前驅物包含鉬前驅物,且層包含鉬。在一些實施例中,鉬前驅物包含鹵化鉬及/或氧鹵化鉬(molybdenum oxyhalide)。在一些實施例中,鉬前驅物係選自由MoCl5
、MoO2
Cl2
、及MoOCl4
組成的列表。在一些實施例中,鉬前驅物係MoCl5
。在一些實施例中,鉬前驅物係MoO2
Cl2
。在一些實施例中,鉬前驅物係MoCl5
。
在一些實施例中,第二前驅物包含矽前驅物,且層包含矽。在一些實施例中,矽前驅物包含矽烷及/或氯矽烷。
在一些實施例中,矽前驅物包含矽烷。在一些實施例中,矽烷係選自由SiH4
、Si2
H6
、Si3
H8
組成的列表。
在一些實施例中,矽前驅物包含氯矽烷。在一些實施例中,氯矽烷係選自由SiCl4
、SiH2
Cl2
、Si2
Cl6
、Si3
H2
Cl6
、及Si3
Cl8
組成的列表。
在一些實施例中,矽前驅物包含碘矽烷。在一些實施例中,碘矽烷係SiH3
I。在一些實施例中,碘矽烷係SiH2
I2
。在一些實施例中,碘矽烷係SiHI3
。在一些實施例中,碘矽烷係SiI4
。
在一些實施例中,第二前驅物係鉭前驅物,且層包含鉭。在一些實施例中,鉭前驅物包含鹵化鉭及/或金屬有機鉭化合物。
在一些實施例中,第二前驅物包含鹵化鉭。在一些實施例中,鹵化鉭包含TaCl5
。在一些實施例中,鹵化鉭包含TaBr5
。
在一些實施例中,第二前驅物包含金屬有機鉭化合物。在一些實施例中,金屬有機鉭化合物包含Ta(N(CH3
)2
)5
。
在一些實施例中,第二前驅物包含鈦前驅物,且層包含鈦。在一些實施例中,鈦前驅物包含鹵化鈦。在一些實施例中,鹵化鈦係TiCl4
。在一些實施例中,此第一前驅物包含VCl4
,此第二前驅物包含TiCl4
,且層包含鈦、釩、及氮。在一些實施例中,第一前驅物係VCl4
,第二前驅物係TiCl4
,共反應物係NH3
,且層包含VTiN。此前驅物組合可以是有利的。例如,VCl4
、TiCl4
、及NH3
係揮發性及批量可相容的。
根據本揭露之尚有額外的實施例,一種裝置或其部分可使用如本文所述之方法及/或結構形成。此裝置可包括基板、絕緣或介電層、上覆於絕緣或介電層之含有釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成的列表之元素的層、及可選的上覆於含有釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成的列表之元素的層之額外金屬層。此裝置可以是或可形成例如金氧半導體場效電晶體(例如P型金氧半場效電晶體)的部分。
在一些實施例中,P型金氧半場效電晶體裝置可以是環繞式閘極P型金氧半導體(pmos)場效電晶體。因此,進一步提供一種環繞式閘極P型金氧半導體(pmos)場效電晶體,其包含臨限電壓調諧層。臨限電壓調諧層包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素。有利地,臨限電壓調諧層係根據如本文所述之用於在反應器室中於基板上形成層之方法形成。
在一些實施例中,臨限調諧層係定位在氧化矽層與高介電值介電層之間。
在一些實施例中,一高介電值介電層係定位在一氧化矽層與此臨限電壓調諧層之間。
本文進一步提供一種金屬-絕緣體-金屬金屬電極,其包含包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成的列表之元素的層。有利地,此層係根據如本文所述之用於在反應器室中於基板上形成層之方法形成。
本文進一步提供一種垂直NAND (VNAND)接點,其包含了包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成的列表之元素的層。有利地,此層係根據如本文所述之用於在反應器室中於基板上形成層之方法形成。
本文進一步提供一種動態隨機存取記憶體(DRAM)單元電極,其包含包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成的列表之元素的層。有利地,此層係根據如本文所述之用於在反應器室中於基板上形成層之方法形成。
本文進一步提供一種用於蝕刻一可蝕刻層之方法,此可蝕刻層上覆於包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層。此方法包含使可蝕刻層暴露至蝕刻劑的步驟,與包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層相比,此蝕刻劑對此可蝕刻層具有較高蝕刻率。因此,包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層充當蝕刻停止層(etch stop layer)。有利地,此層係根據如本文所述之用於在反應器室中於基板上形成層之方法形成。
因此,本文進一步提供包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層作為蝕刻停止層之使用。
本文進一步提供金屬線(wire),其部分或全部地以包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層加襯(lined)。在一些實施例中,金屬線包含銅。在一些實施例中,金屬線包含鎢。在一些實施例中,金屬線包含由銅及/或鎢組成或實質上由銅及/或鎢組成的芯線。有利地,此層係根據如本文所述之用於在反應器室中於基板上形成層之方法形成。應瞭解,用語「金屬線(wire)」可指互連或指複數個互連,如通常在積體電路中遭遇者(encountered)。
本文進一步提供一種包含一或多個反應室之系統。此系統進一步包含一第一前驅物氣體源,其包含一第一前驅物。此第一前驅物包含釩。此系統進一步包含第二前驅物氣體源。第二氣體源包含第二前驅物。此第二前驅物包含選自由鉬、鉭、鈮、鋁、及矽組成之列表的一元素。此系統進一步包含反應物氣體源。反應物氣體源包含反應物。反應物包含氮。此系統進一步包含一控制器。控制器係配置以控制進入一或多個反應室中之至少一者的氣體流,以形成上覆於基板表面的層。層包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素。在一些實施例中,經由如本文所述之方法來沉積層。
現轉向圖式,第1圖繪示根據本揭露之例示性實施例之方法100。例如,方法100可用以形成適於N型金氧半導體(NMOS)、P型金氧半導體(PMOS)、及/或互補式金氧半導體裝置的閘極電極結構(諸如,用於在互補式金氧半導體裝置中用作p型偶極移位器)。然而,除非另有註明,方法不受限於此類應用。
方法100包括下列步驟:在反應器之反應室內提供基板(步驟102)及使用沉積製程將層沉積至基板表面上(步驟104)。有利地,沉積製程包含循環沉積製程。層包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素。
在步驟102期間,於反應室內提供基板。步驟102期間所用的反應室可以是或可包括化學氣相沉積反應器系統的反應室,其配置以執行沉積製程(例如循環沉積製程)。儘管如此,反應器室亦可以是原子層沉積系統的反應器室。反應室可以是獨立反應室或叢集工具的部分。
步驟102可包括在反應室內將基板加熱至所想要的沉積溫度。在本揭露之一些實施例中,步驟102包括將基板加熱至小於800°C的溫度。例如,在本揭露之一些實施例中,將基板加熱至沉積溫度可包含將基板加熱至介於大約20°C與大約800°C、約100°C與約500°C、約150°C與約450°C、或約200°C與約400°C之間的溫度。
除了控制基板溫度以外,亦可調節反應室內的壓力。例如,在本揭露之一些實施例中,步驟102期間之反應室內的壓力可小於760托耳、或介於0.2托耳與760托耳、約1托耳與100托耳、或約1托耳與10托耳之間、或小於3托耳、或小於2托耳、或小於1托耳。
在步驟104期間,使用沉積製程將層沉積至基板表面上。此沉積製程可以是一循環沉積製程。層包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素。如上文所提及,循環沉積製程可包括循環化學氣相沉積、原子層沉積、或混合式循環化學氣相沉積/原子層沉積製程。舉例而言,在一些實施例中,特定原子層沉積製程之生長率(growth rate)與化學氣相沉積製程相較可以是低的。一個增加生長率的方法可在於以高於一般原子層沉積製程中所用的沉積溫度進行操作,產生某一部分的化學氣相沉積製程,但仍利用循序引入反應物。此一製程可稱為循環化學氣相沉積。在一些實施例中,循環化學氣相沉積製程可包含將二或更多個反應物引入反應室中,其中在反應室中之二或多個反應物之間可存在重疊的時間段,生成沉積的原子層沉積成分及沉積的化學氣相沉積成分兩者。此係稱為混合式製程。根據進一步的實例,循環沉積製程可包含一個反應物/前驅物的連續流及第二反應物至反應室中之週期性脈衝。在一些實施例中,沉積製程可以是非循環製程,亦即,前驅物及反應物在其中係連續地提供至反應室的製程。
根據本揭露之一些實例,沉積製程係熱沉積製程。在這些情況下,沉積製程不包括使用電漿以形成活化物種,以用於在沉積製程中使用。例如,沉積製程可不包含氧、氮、硫、或碳電漿之形成或使用、可不包含激發氧、氮、硫、或碳物種之形成或使用、及/或可不包含氧、氮、硫、或碳自由基之形成或使用。
在步驟104期間,使用釩前驅物、含氮共反應物、及用於選自由鉬、鉭、鈮、鋁、及矽組成之列表的至少一元素之前驅物。合適的前驅物係在本文中於別處描述。
在熱循環沉積製程的情況下,提供反應物至反應室之步驟的持續時間可相對長,以允許反應物與前驅物或其衍生物(derivative)起反應。例如,持續時間可大於或等於5秒、或大於或等於10秒、或介於約5與10秒之間。
作為步驟104的部分,反應室可使用真空及/或惰性氣體吹掃,以減輕反應物之間的氣相反應,並致能自飽和的表面反應(例如,在時間隔離原子層沉積 (temporal ALD)的情況下)。額外或替代地,可移動基板以分開地接觸第一氣相反應物及第二氣相反應物(例如,在空間隔離原子層沉積 (spatial ALD)的情況下)。在基板與下一反應性化學品接觸之前,可諸如藉由吹掃反應空間、或藉由移動基板,而從基板表面或反應室移除過剩的化學品及反應副產物(若有的話)。反應室可在提供前驅物至反應室的步驟之後、及/或在提供反應物至反應室的步驟之後吹掃。
在本揭露之一些實施例中,方法100包括重複單位沉積循環,其包括(1)提供第一前驅物至反應室,第一前驅物包含釩;(2)提供第二前驅物至反應室,第二前驅物包含選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素;及(3)提供含氮反應物至反應室,其中在步驟(1)之後、在步驟(2)之後、及/或在步驟(3)之後進行可選的吹掃或移動步驟。例如,沉積循環可基於沉積層的想要的厚度而重複一或多次。例如,若沉積層的厚度小於特定應用想要的者,則提供前驅物至反應室及提供反應物至反應室的步驟可重複一或多次。層一經沉積達想要的厚度,就可使基板遭受額外製程以形成裝置結構及/或裝置。
在一些實施例中,在具有多於約2、多於約5、多於約10、多於約25、多於約50、多於約100、或介於約10與100之間、或約5至約25之深寬比(高度/寬度)的結構之中/之上,如此形成的層之步階覆蓋(step coverage)係等於或大於約50%、或大於約80%、或大於約90%、或約95%、或約98%、或約99%或更大。
第2圖繪示根據本揭露之額外實例之裝置200的結構/一部分。裝置或結構200包括基板202、介電或絕緣材料205、及根據如本文所述之方法形成的層208。在所繪示之實例中,結構200亦包括額外導電層210。
基板202可以是或包括本文所述之基板材料中的任何者。
介電或絕緣材料205可包括一或多個介電或絕緣材料層。舉實例而言,介電或絕緣材料205可包括介面層204及經沉積為上覆於介面層204的高介電值材料206。在一些情況下,介面層204可不存在,或可不以可察覺程度存在。介面層204可包括氧化物(諸如氧化矽),其可使用例如化學氧化製程或氧化物沉積製程而形成於基板202之表面上。高介電值材料206可以是或可包括例如具有大於約7之介電常數的金屬性氧化物。在一些實施例中,高介電值材料具有的介電常數高於氧化矽的介電常數。例示性高介電值材料包括下列中之一或多者:氧化鉿(HfO2
)、氧化鉭(Ta2
O5
)、氧化鋯(ZrO2
)、氧化鈦(TiO2
)、矽酸鉿(HfSiOx
)、氧化鋁(Al2
O3
)、或氧化鑭 (La2
O3
)、或其等之混合物/層合物。
可根據本文所述之方法形成含有釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層208。當使用循環沉積製程形成層208時,層208中的釩及/或其他成分之濃度可例如藉由控制在一或多個沉積循環期間的前驅物及/或反應物的量及/或各別脈衝時間,而從層208之底部到層208之頂部產生變化。在一些情況下,含有釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層208可具有化學計量組成(stoichiometric composition)。此層208的功函數及其他性質可藉由變更釩及/或其他化合物在層208中或在沉積循環中的量來變更。
含有釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層208可包括雜質(諸如鹵化物、氫、或類似者)。在一些實施例中,單獨或組合的雜質含量可小於一原子百分比、小於0.2原子百分比、或小於0.1原子百分比、或小於0.05原子百分比。
含有釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層208的厚度可根據應用而變化。舉實例而言,此層208的厚度可以是小於5奈米、或約0.2奈米至約5奈米、或約0.3奈米至約3奈米、或約0.3奈米至約1奈米。例如,當用於控制P型金氧半場效電晶體中的臨限電壓時,含有釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層208可相對薄,對包括功函數及/或電壓臨限調整層之許多應用而言其可以是所想要的。例示性厚度係從0.1至5.0奈米、0.2至4.0奈米、0.3至3.0奈米、0.4至2.0奈米、0.5至1.5奈米、0.7奈米至1.3奈米、或0.9奈米至1.1奈米。在一些實施例中,層可具有小於0.1奈米的厚度。應瞭解,此類層不一定係連續的,且甚至可由複數個隔絕的原子團簇及/或複數個隔絕的原子組成。
額外或替代地,含有釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層208可(例如使用方法100)以小於< 5奈米、< 4奈米、< 3奈米、< 2奈米、< 1.5奈米、< 1.2奈米、< 1.0奈米、或< 0.9奈米的厚度形成連續膜。含有釩、氮、及另一元素之層208可以是相對平滑的,其具有相對低的晶粒邊界形成。在一些情況下,含有釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層208可以是非晶或可包含非晶區域。額外或替代地,此層208可包含相對低的柱狀晶體結構(與TiN相比)。例示性之含有釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層208的方均根粗糙度(RMS roughness)在小於10奈米的厚度下可以是< 1.0奈米、< 0.7奈米、< 0.5奈米、< 0.4奈米、< 0.35奈米、或< 0.3奈米。
含有釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層208的功函數可以是> 4.6電子伏特(eV)、> 4.7電子伏特、> 4.8電子伏特、> 4.9電子伏特、> 4.95電子伏特、或> 5.0電子伏特。裝置的功函數值可使用此類層來移位約30毫電子伏特(meV)至約400毫電子伏特、或約30毫電子伏特至約200毫電子伏特、或約50毫電子伏特至約100毫電子伏特。
額外的導電層212可包括例如金屬(諸如耐火金屬或類似者)。
第3圖繪示根據本揭露之實例之另一例示性結構300。裝置或結構300包括基板302、介電或絕緣材料304、及含有釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層306。在所繪示之實例中,結構300亦包括額外導電層312。基板302、介電或絕緣層304、含有釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層306、及額外導電層312可相同或類似於基板202、介電或絕緣材料205、含有釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層208、及導電層210。
在所繪示之實例中,基板302包括源極區314、汲極區316、及通道區318。雖然繪示為水平結構,根據本揭露之實例的結構及裝置可包括垂直及/或三維結構及裝置(諸如鰭式場效電晶體(FET)裝置及環繞式閘極金氧半場效電晶體(MOSFET))。
第4圖繪示根據本揭露之實例之另一結構400。結構400適於環繞式閘極場效電晶體(gate all around field effect transistors,GAA FET)(亦稱為側向奈米線(lateral nanowire)場效電晶體)裝置及類似者。
在所繪示之實例中,結構400包括半導體材料402、介電材料404、含有釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層406、及導電層408。結構400可形成為上覆於基板,包括本文所述之任何基板材料。
半導體材料402可包括任何合適的半導體材料。例如,半導體材料402可包括第四族(Group IV)、第三族到第五族(Group III-V)、或第二族到第六族(Group II-VI)半導體材料。舉實例而言,半導體材料402包括矽。
介電材料404、含有釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層406、及導電層408可相同或類似於上述之介電或絕緣材料205、含有釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層208、及導電層210。
第5圖繪示根據本揭露之尚有額外的例示性實施例之系統500。系統500可用以執行如本文所述之方法及/或形成如本文所述之結構或裝置部分。
在所繪示之實例中,系統500包括一或多個反應室502、前驅物氣體源504、反應物氣體源506、吹掃氣體源508、排氣510、及控制器512。
反應室502可包括任何合適的反應室(諸如原子層沉積或化學氣相沉積反應室)。
前驅物氣體源504可包括容器及單獨或與一或多個載體(例如惰性)氣體混合之如本文所述之一或多個前驅物。反應物氣體源506可包括容器及單獨或與一或多個載體氣體混合之如本文所述之一或多個反應物。如本文所述,吹掃氣體源508可包括一或多個惰性氣體。雖然經繪示為具有四個氣體源504至508,系統500可包括任何合適數目的氣體源。氣體源504至508可經由管線514至518耦接至反應室502,此此等管線可各自包括流量控制器、閥、加熱器、及類似者。
排氣510可包括一或多個真空泵。
控制器512包括電子電路系統及軟體以選擇性地操作閥、歧管、加熱器、泵、及其他包括在系統500中的組件。此類電路系統及組件操作以從各別的源504至508引入前驅物、反應物、及吹掃氣體。控制器512可控制氣體脈衝序列的時序、基板及/或反應室的溫度、反應室內的壓力、及各種其他操作,以提供系統500的適當操作。控制器512可包括控制軟體以電性或氣動地控制閥,以控制前驅物、反應物、及吹掃氣體進出反應室502的流動。控制器512可包括執行某些任務之模組(諸如軟體或硬體組件,例如現場可程式化邏輯閘陣列(FPGA)或特殊應用積體電路(ASIC))。模組可有利地配置以常駐在控制系統之可定址(addressable)儲存媒體上,並配置以執行一或多個製程。
系統500之其他配置係可行的,包括不同數目及種類的前驅物及反應物源以及吹掃氣體源。進一步地,將理解閥、導管、前驅物源、及吹掃氣體源有許多配置,其等可用以實現將氣體選擇性饋入反應室502的目標。進一步地,作為一系統示意圖示,為了容易繪示已省略許多組件,且此類組件可包括例如各種閥、歧管、純化器(purifiers)、加熱器、容器、通氣孔、及/或旁路。
在反應器系統500之操作期間,基板(諸如半導體晶圓(未繪示))係從例如基板搬運系統傳遞至反應室502。基板一經傳遞至反應室502,就將來自氣體源504至508之一或多個氣體(諸如前驅物、反應物、載體氣體、及/或吹掃氣體)引入反應室502中。
第6圖繪示例示性動態隨機存取記憶體電容(600)。在所示的實施例中,此電容包括頂部電極(610、670),其包含兩部分(亦即,內殼及外殼)。儘管如此,頂部電極可僅包含一部分,或者可包含多於兩部分(例如三或更多個部分)。應瞭解,第6圖之實施例中的頂部電極(610、670)的兩部分係彼此電性連接(連接未圖示),亦即,應瞭解在正規操作期間,其等係保持在相同或大約相同的電位。頂部電極(610、670)包含包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層。較佳地,此層係根據本文所揭示之方法沉積。例如,頂部電極(610、670)可具有至少0.5奈米至5.0奈米、或至少1.0奈米到至多4.0奈米、或至少2.0奈米到至多3.0奈米、或至少0.5奈米到至多2.5奈米、或至少0.6奈米到至多2.0奈米、或至少0.7奈米到至多1.5奈米的厚度。動態隨機存取記憶體電容(600)進一步包含底部電極(640)。底部電極(640)包含包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層。在一些實施例中,底部電極(640)的組成相等於頂部電極(610、670)的組成。替代地,底部電極(640)的組成可不同於頂部電極(610、670)的組成。例如,底部電極(640)可具有至少1.0奈米到至多10.0奈米、或至少3.0奈米到至多7.0奈米、或至少0.5奈米至5.0奈米、或至少1.0奈米到至多4.0奈米、或至少2.0奈米到至多3.0奈米、或至少0.5奈米到至多2.5奈米、或至少0.6奈米到至多2.0奈米、或至少0.7奈米到至多1.5奈米的厚度。底部電極(640)藉由一或多個介電層(620、630)來與頂部電極(610)的外殼分開。所示之實施例配備兩介電層(620、630)。一或多個介電層(620、630)可包含高介電值介電質。例如,高介電值介電質可選自包含氧化鉿(HfO2
)、氧化鉭(Ta2
O5
)、氧化鋯(ZrO2
)、氧化鈦(TiO2
)、矽酸鉿(HfSiOx
)、氧化鋁(Al2
O3
)、或氧化鑭(La2
O3
)、及其等之混合物/層合物的列表。在一些實施例中,介電層(620)具有與介電層(630)相同的組成。在一些實施例中,介電層(620)具有與介電層(630)不同的組成。例如,兩介電層(620、630)的組合厚度可以是從至少0.5奈米到至多10.0奈米、或至少1.0奈米到至多8.0奈米、或至少2.0奈米到至多6.0奈米、或至少3.0奈米到至多4.0奈米。頂部電極(670)的內殼係經由一或多個介電層(650、660)而與底部電極(640)分開。所示之實施例配備兩此類介電層。一或多個介電層(650、660)可包含高介電值介電質。例如,高介電值介電質可選自包含氧化鉿(HfO2
)、氧化鉭(Ta2
O5
)、氧化鋯(ZrO2
)、氧化鈦(TiO2
)、矽酸鉿(HfSiOx
)、氧化鋁(Al2
O3
)、或氧化鑭(La2
O3
)、及其等之混合物/層合物的列表。在一些實施例中,介電層(650)具有與介電層(660)相同的組成。在一些實施例中,介電層(650)具有與介電層(660)不同的組成。例如,介電層(650、660)的組合厚度可以是從至少0.5奈米到至多10.0奈米、或至少1.0奈米到至多8.0奈米、或至少2.0奈米到至多6.0奈米、或至少3.0奈米到至多4.0奈米。在一些實施例中,頂部電極(610)之外殼與底部電極(640)之間的一或多個介電層(620、630)之厚度等於頂部電極(670)之外殼與底部電極(640)之間的一或多個介電層(650、660)之厚度(例如,在小於2.0奈米、或小於1.5奈米、或小於1.0奈米、或小於0.5奈米、或小於0.4奈米、或小於0.3奈米、或小於0.2奈米、或小於0.1奈米的誤差範圍內)。在動態隨機存取記憶體電容(680)中,間隙填充介電質(680)可配置在中心。例示性的間隙填充介電質包括低k介電質(例如SiOC、SiOCN、及類似者)。
第7圖繪示VNAND單元的一部分,即接點及電荷捕捉(charge trapping)總成(700)。接點及電荷捕捉總成(700)包含金屬層(710)。金屬層(710)可由諸如銅、鎢等金屬製成。如第7圖所繪示,金屬層(710)可以襯墊(720)加襯。襯墊可改善黏附及/或可防止或至少最小化金屬(例如銅或鎢)從金屬層(710)向外擴散。有利地,襯墊(720)包含包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層。有利地,此層係經由如本文所述之方法沉積。接點及電荷捕捉總成(700)包含電荷捕捉層(740)。電荷捕捉層(740)係定位在兩介電層(730、750)之間。電荷捕捉層可包含導電層(諸如,例如氮化矽)。額外或替代地,電荷捕捉層可包含包含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層。有利地,此層可經由如本文所述之方法沉積。介電層(730)中的一者係相鄰於襯墊(720)。例如,此介電層(730)可包含高介電值材料。例如,高介電值介電質可選自包含氧化鉿(HfO2
)、氧化鉭(Ta2
O5
)、氧化鋯(ZrO2
)、氧化鈦(TiO2
)、矽酸鉿(HfSiOx
)、氧化鋁(Al2
O3
)、或氧化鑭(La2
O3
)、及其等之混合物/層合物的列表。在VNAND記憶體架構的合適配置中,另一介電層(750)可充當穿隧層(tunnel layer),並可相鄰於例如經摻雜的多晶矽、通道層(未圖示)。
上文所述之本揭露之實例實施例並未限制本揭露的範疇,因為這些實施例僅為本揭露之實施例之實例,本揭露之範疇係由隨附之申請專利範圍及其法定均等物定義。任何等效具體例皆旨在本揭露之範疇內。實際上,除本文中所示及所述者以外,所屬技術領域中具有通常知識者可由本說明書明白本揭露之各種修改(諸如所述元件之替代可用組合)。此類修改及實施例亦意欲落在隨附之申請專利範圍的範疇內。
100:方法
102:步驟
104:步驟
200:裝置,結構
202:基板
204:介面層
205:介電,絕緣材料
206:高介電值材料
208:層
210:導電層
300:裝置,結構
302:基板
304:介電,絕緣材料
306:層
312:導電層
314:源極區
316:汲極區
318:通道區
400:結構
402:半導體材料
404:介電材料
406:層
408:導電層
500:系統
502:反應室
504:前驅物氣體源
505:
506:反應物氣體源
508:吹掃氣體源
510:排氣
512:控制器
514,515,516,518:管線
600:動態隨機存取記憶體電容
610:頂部電極
620:介電層
630:介電層
640:底部電極
650:介電層
660:介電層
670:頂部電極
680:介電質
700:接點,電荷捕捉總成
710:金屬層
720:襯墊
730:介電層
740:電荷捕捉層
750:介電層
當結合下列闡釋性圖式考慮時,可藉由參照實施方式及申請專利範圍而得到對本揭露之實施例的更完整瞭解。
第1圖繪示根據本揭露之例示性實施例之方法。
第2圖至第4圖繪示根據本揭露之實施例之例示性結構。
第5圖繪示根據本揭露之額外的例示性實施例之反應器系統。
第6圖繪示根據本揭露之額外的例示性實施例之例示性動態隨機存取記憶體電容。
第7圖繪示根據本揭露之額外的例示性實施例之VNAND單元的一部分。
在所有圖式之中,均遵循下列的編號方式:100-方法;102-在反應室內提供基板之步驟;104-沉積製程;200-裝置、結構;202-基板;205-介電或絕緣材料;208-根據如本文所述之方法形成的層;210-額外的導電層;212-額外的導電層;300-結構;302-基板;304-介電或絕緣材料;306-含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層;312-額外的導電層;314-源極區;316-汲極區;318-通道區;400-結構;402-半導體材料;404-介電材料;406-含釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的元素之層;408-導電層;500-系統;502-一或多個反應室;504-第一前驅物氣體源;505-第二前驅物氣體源;506-反應物氣體源;508-吹掃氣體源;510-排氣;512-控制器;514-第一前驅物氣體管線;515-第二前驅物氣體管線;516-反應物氣體管線;518-吹掃氣體管線;600-動態隨機存取記憶體電容;610-頂部電極;620-介電層;630-介電層;640-底部電極;650-介電層;660-介電層;670-頂部電極;680-間隙填充介電質;700-VNAND結構中之接點及電荷捕捉總成;710-金屬層;720-襯墊;730-介電質;740-電荷捕捉層;750-介電質。
將理解,圖式中之元件係為了簡明及清楚起見而繪示,且不必然按比例繪製。舉例而言,圖式中之元件中之一些之尺寸可相對於其他元件而言放大,以幫助改善對所繪示本揭露具體例的理解。
200:裝置,結構
202:基板
204:介面層
205:介電,絕緣材料
206:高介電值材料
208:層
210:導電層
Claims (20)
- 一種用於在一反應器室中於一基板上形成一層之方法,包括應用一沉積製程,該沉積製程包括 提供一第一前驅物至該反應器室,該第一前驅物包括釩; 提供一第二前驅物至該反應器室,該第二前驅物包括選自由鉬、鉭、鈮、鋁、及矽組成之列表的一元素;以及 提供一反應物至該反應器室,該反應物包括氮; 因而在該基板上形成一層,該層包括釩;該層包括選自由鉬、鉭、鈮、鋁、及矽組成之列表的該元素;且該層包括氮。
- 如請求項1之方法,其中該反應物包括氨及/或肼。
- 如請求項1或2之方法,其中該第一前驅物包括一鹵化釩、一氧鹵化釩、及一釩有機金屬化合物中之一或多者。
- 如請求項3之方法,其中該第一前驅物包括VCl4 。
- 如請求項1至4項中任一之方法,其中該第二前驅物包括一鹵化物。
- 如請求項1至4項中任一之方法,其中該第二前驅物包括一烷基鋁,且其中該層包括鋁。
- 如請求項6之方法,其中該第二前驅物包括三甲基鋁。
- 如請求項1至4項中任一之方法,其中該第二前驅物包括一鹵化鈮,且其中該層包括鈮。
- 如請求項1至4項中任一之方法,其中該第二前驅物包括一鹵化鉿或一金屬有機鉿化合物,且其中該層包括鉿。
- 如請求項1至4項中任一之方法,其中該第二前驅物包括一鹵化鉬及/或一氧鹵化鉬,且其中該層包括鉬。
- 如請求項1至4項中任一之方法,其中該第二前驅物包括一矽烷及/或一氯矽烷,且其中該層包括矽。
- 如請求項1至4項中任一之方法,其中該第二前驅物包括一鹵化鉭及/或一金屬有機鉭化合物,且其中該層包括鉭。
- 如請求項1至4項中任一之方法,其中該第二前驅物包括一鹵化鈦,且其中該層包括鈦。
- 如請求項1至13項中任一之方法,其中該層之一厚度係從至少0.2奈米到至多5奈米。
- 如請求項1至14項中任一之方法,其中該第一前驅物、該第二前驅物、及該反應物係同時提供至該反應器室。
- 如請求項1至14項中任一之方法,其中該沉積製程係一循環沉積製程。
- 一種環繞式閘極P型金氧半導體場效電晶體,包括一臨限電壓調諧層,該臨限電壓調諧層係如請求項1至16項中任一項之方法所形成。
- 一種金屬-絕緣體-金屬金屬電極,包括經由如請求項1至16項中任一項之方法沉積的一層。
- 一種VNAND接點,包括經由如請求項1至16項中任一項之方法沉積的一層。
- 一種系統,包括: 一或多個反應室; 一第一前驅物氣體源,包括一第一前驅物,該第一前驅物包括釩; 一第二前驅物氣體源,包括一第二前驅物,該第二前驅物包括選自由鉬、鉭、鈮、鋁、及矽組成之列表的一元素; 一反應物氣體源,包括一反應物,該反應物含有氮;以及 一控制器, 其中該控制器係配置以控制進入該一或多個反應室中之至少一者的氣體流,以經由如請求項1至16項中任一項之方法形成上覆於一基板表面的一層,該層包括釩、氮、及選自由鉬、鉭、鈮、鋁、及矽組成之列表的該元素。
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US202063015018P | 2020-04-24 | 2020-04-24 | |
US63/015,018 | 2020-04-24 |
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TW110113900A TW202143304A (zh) | 2020-04-24 | 2021-04-19 | 用於在基板上形成層之方法、環繞式閘極p型金氧半導體場效電晶體、金屬-絕緣體-金屬金屬電極、vnand接點、及沉積系統 |
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US (1) | US11887857B2 (zh) |
KR (1) | KR20210132600A (zh) |
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KR20210103956A (ko) | 2020-02-13 | 2021-08-24 | 에이에스엠 아이피 홀딩 비.브이. | 수광 장치를 포함하는 기판 처리 장치 및 수광 장치의 교정 방법 |
KR20210103953A (ko) | 2020-02-13 | 2021-08-24 | 에이에스엠 아이피 홀딩 비.브이. | 가스 분배 어셈블리 및 이를 사용하는 방법 |
KR20210105289A (ko) | 2020-02-14 | 2021-08-26 | 에이에스엠 아이피 홀딩 비.브이. | 펄스형 플라즈마 전력을 사용하여 유전체 재료 층을 형성하기 위한 방법, 이 층을 포함한 구조물 및 소자, 그리고 이 층을 형성하기 위한 시스템 |
TW202146715A (zh) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於生長磷摻雜矽層之方法及其系統 |
US20210265158A1 (en) | 2020-02-25 | 2021-08-26 | Asm Ip Holding B.V. | Method of forming low-k material layer, structure including the layer, and system for forming same |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210113043A (ko) | 2020-03-04 | 2021-09-15 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 정렬 고정구 |
TW202200822A (zh) | 2020-03-11 | 2022-01-01 | 美商應用材料股份有限公司 | 使用催化沉積的間隙填充方法 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
KR20210116249A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법 |
CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
CN113394067A (zh) | 2020-03-13 | 2021-09-14 | Asm Ip私人控股有限公司 | 基板处理设备 |
US20210292902A1 (en) | 2020-03-17 | 2021-09-23 | Asm Ip Holding B.V. | Method of depositing epitaxial material, structure formed using the method, and system for performing the method |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
KR20210127087A (ko) | 2020-04-10 | 2021-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
KR20210127620A (ko) | 2020-04-13 | 2021-10-22 | 에이에스엠 아이피 홀딩 비.브이. | 질소 함유 탄소 막을 형성하는 방법 및 이를 수행하기 위한 시스템 |
KR20210128343A (ko) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
KR20210129598A (ko) | 2020-04-17 | 2021-10-28 | 에이에스엠 아이피 홀딩 비.브이. | 수직형 퍼니스의 반응기 내에 배열되도록 구성된 인젝터와 수직형 퍼니스 |
KR20210130646A (ko) | 2020-04-21 | 2021-11-01 | 에이에스엠 아이피 홀딩 비.브이. | 기판을 처리하기 위한 방법 |
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2021
- 2021-04-15 KR KR1020210049286A patent/KR20210132600A/ko active Search and Examination
- 2021-04-19 TW TW110113900A patent/TW202143304A/zh unknown
- 2021-04-20 CN CN202110422433.6A patent/CN113549896A/zh active Pending
- 2021-04-21 US US17/235,990 patent/US11887857B2/en active Active
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KR20210132600A (ko) | 2021-11-04 |
CN113549896A (zh) | 2021-10-26 |
US11887857B2 (en) | 2024-01-30 |
US20210335615A1 (en) | 2021-10-28 |
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