CN110453196A - 薄膜形成方法及衬底处理装置 - Google Patents

薄膜形成方法及衬底处理装置 Download PDF

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CN110453196A
CN110453196A CN201910378791.4A CN201910378791A CN110453196A CN 110453196 A CN110453196 A CN 110453196A CN 201910378791 A CN201910378791 A CN 201910378791A CN 110453196 A CN110453196 A CN 110453196A
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金永宰
金永勋
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Abstract

本文公开了一种薄膜形成方法以及衬底处理装置。所述薄膜形成方法包括：第一操作，将源气体以第一流速供应到反应器中；第二操作，将所述反应器中的所述源气体吹洗到排气单元；第三操作，将反应气体以第二流速供应到所述反应器中；第四操作，将等离子体供应到所述反应器中；以及第五操作，将所述反应器中的所述反应气体吹洗到所述排气单元，其中，在所述第二操作到所述第五操作期间，所述源气体旁通到所述排气单元，且旁通到所述排气单元的所述源气体的流速小于所述第一流速。根据所述薄膜形成方法，源气体及反应气体的消耗可降低，且在排气单元中反应副产物的产生可最小化。

Description

薄膜形成方法及衬底处理装置
[相关申请的交叉参考]
本申请主张2018年5月8日在美国专利及商标局中提出申请的美国临时申请第62/668,685号的权利，所述美国临时申请的公开内容全文并入本文供参考。
技术领域
一个或多个实施例涉及一种薄膜形成方法及一种衬底处理装置，且具体来说，涉及一种能够降低在薄膜形成工艺期间所使用的源气体及反应气体的消耗的薄膜形成方法及衬底处理装置。更具体来说，一个或多个实施例涉及一种降低在使用二氯硅烷(DCS；SiH2Cl2)源的SiN薄膜沉积工艺中DCS源的消耗的方法。
一个或多个实施例还涉及一种能够防止产生反应副产物的薄膜形成方法及衬底处理装置。
背景技术
随着半导体技术的发展，半导体衬底处理工艺(例如沉积工艺或蚀刻工艺)已变得更为复杂，且因此越来越多地使用各种类型的化学品来作为原材料。因此，已开发出具有各种用于处理这些原材料的结构的沉底处理设备。
当使用具有高反应性的异源化学品时，设备操作可能因反应副产物而中断。举例来说，反应副产物可作为固体而余留在排气管线中，且这些残留固体可能降低排气效率且使例如阀门、压力表等内部组件发生故障。另外，固体余留在洗涤器或排气泵(洗涤器或排气泵在有害化学品被排出到空气之前收集所述有害化学品)中，且因此，当衬底处理装置的总体操作停止时，其可能在装置操作及生产率提高方面造成大问题。
另外，为在衬底处理工艺期间将反应器中的压力脉动(pressure fluctuation)最小化，将气体供应管线中的气体压力保持为恒定。为此，在除对反应器进行的源气体供应操作以外的操作中，经由旁通管线而以与在源气体供应操作中供应的一定量的源气体相同的速率排出源气体。然而，当使用此方法时，可能耗费比反应中所需的量大得多的源气体，且可能在排气管线中产生量大得多的反应副产物，因此对排气管线、排气泵及洗涤器的性能造成负面影响。
发明内容
一个或多个实施例包括一种能够通过减少被旁通的源气体及反应气体的量来解决前述问题的薄膜形成方法及衬底处理装置。
其他方面将在以下说明中被部分地阐述，且这些方面将通过所述说明而部分地变得显而易见，或者可通过实践所呈现的实施例而得知。
根据一个或多个实施例，一种薄膜形成方法包括：第一操作，经由第一质量流控制器(mass flow controller，MFC)而将源气体以第一流速供应到反应器中；第二操作，将所述反应器中的所述源气体吹洗到排气单元；第三操作，经由第二质量流控制器而将反应气体以第二流速供应到所述反应器中；第四操作，将等离子体供应到所述反应器中；以及第五操作，将所述反应器中的所述反应气体吹洗到所述排气单元，其中，在所述第二操作到所述第五操作期间，所述源气体可经由所述第一质量流控制器而旁通到所述排气单元，且旁通到所述排气单元的所述源气体的流速可小于所述第一流速。
根据一个实施例，被旁通的所述源气体的排放路径可与经吹洗的所述源气体或所述反应气体从所述反应器排放的路径相同。
根据一个实施例，可将所述第一流速、第三流速及所述第一操作到所述第五操作的相应处理时间周期输入到所述第一质量流控制器，所述第三流速小于所述第一流速，且可将所述第一质量流控制器编程为基于所输入的所述第一流速、所输入的所述第三流速及所输入的所述第一操作到所述第五操作的所述相应处理时间周期来调节所述源气体的量。
根据一个实施例，可将所述第一质量流控制器编程为：在所述第一操作期间以所述第一流速供应所述源气体；以及在所述第二操作到所述第五操作期间以所述第三流速供应所述源气体。在所述第二操作期间旁通到所述排气单元的所述源气体的流速可从所述第一流速逐渐减小到所述第三流速，且在所述第五操作期间旁通到所述排气单元的所述源气体的所述流速可从所述第三流速逐渐增大到所述第一流速。
根据一个实施例，所述第三流速可大于0且小于所述第一流速。所述第三流速可为所述第一流速的约1/8到约1/10。
根据其他实施例，可将所述第一质量流控制器编程为：在所述第一操作期间以所述第一流速供应所述源气体；在所述第一操作之后以所述第三流速供应所述源气体；以及在所述第一操作之前在第一预定周期期间以所述第一流速供应所述源气体。
根据一个实施例，所述第一预定周期可短于所述第五操作的所述处理时间。
根据其他实施例，所述第二操作到所述第五操作的总处理时间可为1.5秒，且所述第一预定周期可为1.3秒或小于1.3秒。
根据一个实施例，所述第一预定周期的长度可不影响沉积在所述反应器中的薄膜。所述第一预定周期的所述长度可不影响沉积在所述反应器中的所述薄膜的厚度及均匀度。
根据一个实施例，所述第一质量流控制器可在所述第一操作到所述第五操作期间持续地输送所述源气体。
根据一个实施例，可在所述第一操作、所述第二操作及所述第五操作期间经由所述第二质量流控制器而将所述反应气体旁通到所述排气单元，可将所述第二流速、第四流速及所述第一操作到所述第五操作的相应处理时间周期输入到所述第二质量流控制器，所述第四流速小于所述第二流速，且可将所述第二质量流控制器编程为基于所输入的所述第二流速、所输入的所述第四流速及所输入的所述第一操作到所述第五操作的所述相应处理时间周期而：在所述第三操作及所述第四操作期间以所述第二流速供应所述反应气体；以及在所述第一操作、所述第二操作及所述第五操作期间以所述第四流速供应所述反应气体。
根据一个实施例，被旁通的所述源气体或所述反应气体的排放路径可与经吹洗的所述源气体或所述反应气体从所述反应器排放的路径相同，且随着所述第四流速减小，在所述第二操作期间在所述排放路径中反应的所述源气体及所述反应气体的量可减少，且随着所述第三流速减小，在所述第五操作期间在所述排放路径中反应的所述源气体及所述反应气体的所述量可减少。
根据一个实施例，可在所述第一操作、所述第二操作及所述第五操作期间经由所述第二质量流控制器而将所述反应气体旁通到所述排气单元，可将所述第二质量流控制器编程为：在所述第三操作及所述第四操作期间以第二流速供应所述反应气体；在所述第四操作之后以第四流速供应所述反应气体，所述第四流速小于所述第二流速；以及在所述第三操作之前在第二预定周期期间以所述第二流速供应所述反应气体，且所述第二预定周期可在于所述第二操作期间旁通到所述排气单元的所述源气体的所述流速减小到所述第三流速之后开始。
根据一个或多个实施例，一种执行薄膜形成工艺的衬底处理装置包括：气体供应单元；反应器；排气单元，包括单一排气管线且经由所述单一排气管线而连接到所述反应器；以及排气泵单元，经由所述单一排气管线而连接到所述排气单元，其中所述气体供应单元包括：第一气体供应管道，源气体经由所述第一气体供应管道而被从所述气体供应单元供应到所述反应器；第二气体供应管道，反应气体经由所述第二气体供应管道而被从所述气体供应单元供应到所述反应器；第一旁通管道，从所述第一气体供应管道分支出来且连接到所述排气单元；以及第二旁通管道，从所述第二气体供应管道分支出来且连接到所述排气单元，其中，当所述源气体及所述反应气体中的一者经由所述第一气体供应管道或所述第二气体供应管道而供应到所述反应器时，所述气体供应单元可被配置成使所述源气体及所述反应气体中的另一气体经由所述第一旁通管道或所述第二旁通管道而旁通到所述排气单元，且当所述源气体及所述反应气体中的一者被从所述反应器吹洗到所述排气单元时，所述气体供应单元可被配置成使所述源气体及所述反应气体分别经由所述第一旁通管道及所述第二旁通管道而旁通。
根据一个实施例，所述气体供应单元可进一步包括至少一个质量流控制器，且可将所述至少一个质量流控制器编程为当所述源气体或所述反应气体旁通到所述排气单元时减小对应气体的流速。
根据一个或多个实施例，提供一种执行薄膜形成工艺的衬底处理装置，其中所述薄膜形成工艺包括：第一操作，供应源气体；第二操作，吹洗所述源气体；第三操作，供应反应气体；第四操作，施加等离子体；以及第五操作，吹洗所述反应气体，且所述衬底处理装置包括：气体供应单元；反应器；排气单元，包括单一排气管线且经由所述单一排气管线而连接到所述反应器；以及排气泵单元，经由所述单一排气管线而连接到所述排气单元，其中所述气体供应单元包括：第一气体供应管道，源气体经由所述第一气体供应管道而被从所述气体供应单元供应到所述反应器；第二气体供应管道，反应气体经由所述第二气体供应管道而被从所述气体供应单元供应到所述反应器；第一旁通管道，从所述第一气体供应管道分支出来且连接到所述排气单元；以及第二旁通管道，从所述第二气体供应管道分支出来且连接到所述排气单元，且所述气体供应单元被配置成：在所述第一操作期间经由所述第一气体供应管道而将所述源气体供应到所述反应器；在所述第二操作到所述第五操作期间经由所述第一旁通管道而将所述源气体供应到所述排气单元；在所述第三操作及所述第四操作期间经由所述第二气体供应管道而将所述反应气体供应到所述反应器；以及在所述第一操作、所述第二操作及所述第五操作期间经由所述第二旁通管道而将所述反应气体供应到所述排气单元。
根据一个实施例，所述气体供应单元可进一步包括第一质量流控制器及第二质量流控制器。所述第一质量流控制器可被配置成控制所述第一气体供应管道及所述第一旁通管道中的气体的流速，从而使得所述第一旁通管道中的所述流速小于所述第一气体供应管道中的所述流速，且所述第二质量流控制器可被配置成控制所述第二气体供应管道及所述第二旁通管道中的气体的流速，从而使得所述第二旁通管道中的所述流速小于所述第二气体供应管道中的所述流速。
附图说明
结合附图阅读以下对实施例的说明，这些方面和/或其他方面将变得显而易见并更易于理解，在附图中：
图1是说明根据本发明实施例的衬底处理装置的示意图。
图2是说明根据本发明实施例的薄膜形成方法的示意图。
图3A到图3D是说明图1所示衬底处理装置执行图2所示薄膜形成方法的示意图。
图4是说明根据本发明其他实施例的薄膜形成方法的示意图。
图5是说明根据本发明其他实施例的薄膜形成方法的示意图。
图6是说明根据本发明其他实施例的薄膜形成方法的示意图。
图7A到图7D是说明图1所示衬底处理装置执行图4所示薄膜形成方法的示意图。
图8说明当使用图4所示薄膜形成方法时经由旁通管所使用的DCS源的消耗随DCS预流时间(DCS-pre-flow time)而变化的关系。
图9说明当使用图4所示薄膜形成方法时SiN薄膜的均匀度随DCS预流时间而变化的关系。
[符号的说明]
1：源气体供应管道
2：源气体旁通管道
3：反应气体供应管道
4：反应气体旁通管道
5：吹洗气体供应管道
7：第一质量流控制器(MFC)
8：第三MFC
9：第二MFC
10：反应器
11：排气管线/单一排气管线
12：射频(RF)等离子体产生器
13：气体注射构件
14：粗抽阀
15：排气泵单元
16：源气体供应单元
17：吹洗气体供应单元
18：反应气体供应单元
100：衬底处理装置
201、202、203、204、205、402、403、404、406、407：操作
401：操作/第一操作
405：操作/第五操作
R1：第一流速
R2：第二流速
R3：第三流速
R4：第四流速
t、ti、tj、tx、ty：时间
t1、t3、t4、t5：处理时间周期
t2：处理时间/处理时间周期
trpf：第二预定周期
tspf：第一预定周期
v1：阀门/源气体供应阀
v2：阀门/源气体旁通阀
v3：阀门/反应气体供应阀
v4：阀门/反应气体旁通阀
v5、v6、v7：阀门/吹洗气体供应阀
具体实施方式
现将详细参照实施例，所述实施例的实例被说明于附图中，其中相同的参考编号自始至终指代相同的元件。就这一点来说，本发明各实施例可具有不同的形式且不应被视为仅限于本文中所述说明。因此，以下通过参照各附图来阐述实施例仅是为了解释本说明的各个方面。
在下文中，将参照附图详细阐述本发明的实施例。
提供本发明的实施例是为了向所属领域中的普通技术人员更充分地解释本发明，且本文中所述实施例可改变为许多不同的形式且不旨在限制本发明的范围。确切来说，提供这些实施例是为了使本公开内容将透彻及完整，并将向所属领域中的普通技术人员充分传达本发明的范围。
本说明书中所使用的用语仅用于阐述示例性实施例且不旨在限制本发明。除非上下文中清楚地另外指示，否则单数形式的表达也囊括复数形式的表达。另外，例如“包括(comprise和/或comprising)”等用语旨在指示所陈述形状、数目、步骤、操作、构件、元件和/或其组合的存在，而非旨在排除一个或多个其他形状、数目、操作、构件、元件和/或其组合的可能性。本文中所使用的用语“和/或”包括相关列出项其中的一个或多个项的任意及所有组合。
在本说明书中将显而易见，尽管本文中使用用语“第一”、“第二”等来阐述各种构件、区和/或部分，然而这些构件、组件、区、层和/或部分不应受限于这些用语。这些用语不指示特定次序、位置关系或等级且仅用于区分各个构件、区或部分。因此，在不背离本发明的教示内容的条件下，以下将阐述的第一构件、区或部分也可被称为第二构件、区或部分。
在下文中，将参照示意性地说明本发明的示例性实施例的附图来阐述本发明的实施例。在各附图中，预期会例如因制造技术和/或容差而造成相对于所说明形状的变化。因此，本发明的实施例不应被视为仅限于本文中所说明的区的特定形状，而是包括例如因制造而造成的形状变化。
本文中所述衬底处理装置可为例如半导体或显示衬底的沉积装置，但本发明并非仅限于此。衬底处理装置可为任何执行沉积用于形成薄膜的材料所需的装置且可指代其中均匀地供应用于对材料进行蚀刻或抛光的原材料的装置。在下文中，为解释方便起见，将主要阐述半导体沉积装置来作为所述衬底处理装置。
图1是说明根据本发明实施例的衬底处理装置100的示意图。
举例来说，图1所示衬底处理装置100可为用于形成氮化硅(SiN)的原子层沉积(atomic layer deposition)装置。在本实施例中，使用二氯硅烷(DCS；SiH2Cl2)作为源气体，使用氨(NH3)作为反应气体，且使用Ar作为吹洗气体，但本发明并非仅限于此。在本实施例中，衬底处理装置100交替地供应DCS源及氨(NH3)并利用等离子体增强型原子层沉积(plasma-enhanced atomic layer deposition，PEALD)方法以等离子体来激活氨(NH3)，从而形成SiN膜。
DCS源是气态源。与通过鼓泡方法(bubbling method)从源容储器供应到反应器的通用液体源不同，DCS源是从安装在衬底处理装置100外部的DCS容器(例如，以下将阐述的源气体供应单元16)直接供应到反应器。
参照图1，衬底处理装置100可包括气体供应单元、反应器10、排气单元及排气泵单元15。衬底处理装置100可以使得气体利用气体注射构件而垂直地供应到衬底的方式来实现。
气体供应单元可包括第一气体供应管道、第二气体供应管道、第一旁通管道及第二旁通管道，所述第一气体供应管道被配置成将源气体从气体供应单元供应到反应器，所述第二气体供应管道被配置成将反应气体从气体供应单元供应到反应器，所述第一旁通管道从第一气体供应管道分支出来且连接到排气单元，所述第二旁通管道从第二气体供应管道分支出来且连接到排气单元。
具体来说，气体供应单元可包括源气体供应单元16、吹洗气体供应单元17及反应气体供应单元18。气体供应单元可包括源气体供应管道1及源气体旁通管道2，源气体供应管道1被配置成将源气体从源气体供应单元16供应到反应器10，源气体旁通管道2从源气体供应管道1分支出来且连接到排气管线11。气体供应单元可包括反应气体供应管道3及反应气体旁通管道4，反应气体供应管道3被配置成将反应气体从反应气体供应单元18供应到反应器10，反应气体旁通管道4从反应气体供应管道3分支出来且连接到排气管线11。气体供应单元可包括吹洗气体供应管道5，吹洗气体供应管道5被配置成将吹洗气体从吹洗气体供应单元17供应到反应器10，且吹洗气体供应管道5可被分支成分别连接到源气体供应管道1及反应气体供应管道3。
气体供应单元可进一步包括至少一个质量流控制器(MFC)，所述MFC被配置成控制源气体和/或反应气体和/或吹洗气体的流速。MFC可为数控MFC。
参照图1，气体供应单元可包括第一MFC7、第二MFC9及第三MFC8。
第一MFC7可连接到源气体供应单元16及源气体供应管道1且可控制供应到反应器10和/或源气体旁通管道2的源气体的流速。第二MFC9可连接到反应气体供应单元18及反应气体供应管道3且可控制供应到反应器10和/或反应气体旁通管道4的反应气体的流速。第三MFC8可连接到吹洗气体供应单元17及吹洗气体供应管道5且可控制供应到反应器10的吹洗气体的流速。
另外，气体供应单元可进一步包括阀门v1到v7，阀门v1到v7被配置成控制各管道中的气体流动。将参照图3A到图3D阐述在薄膜形成工艺期间的每一操作中阀门v1到v7的操作。
第一MFC7、第三MFC8及第二MFC9以及阀门v1到v7可被控制成选择供应到反应器10的源气体及反应气体的类型及量。
反应器10可为用于在衬底上形成薄膜的空间，例如封闭空间。为此，反应器10的空间可利用例如O形环(O-ring)等密封构件而与反应器10的外部分隔开且可大致维持大气压或低于大气压。反应器10中可放置有上面装设有衬底的衬底支撑构件或承受器(图中未示出)，且在反应器10的侧表面处可设置有容许衬底进入及退出的闸阀(图中未示出)。在此种情形中，闸阀可仅当装载及卸载衬底时开启且在工艺期间保持关闭。
反应器10可包括气体注射构件13。气体注射构件13可被配置成将分别经由源气体供应管道1及反应气体供应管道3而供应的源气体及反应气体以及经由吹洗气体供应管道5而供应的吹洗气体均匀地供应到衬底上。举例来说，气体注射构件13可为喷淋头。在另一实施例中，气体注射构件13可连接到射频(radio frequency，RF)等离子体产生器12，且因此，可执行PEALD工艺。在另一实施例中，气体注射构件13可充当等离子体电极。
排气单元可包括单一排气管线11。反应器10通过单一排气管线11连接到排气单元，且排气单元通过单一排气管线11连接到排气泵单元15。因此，已经过反应器10的源气体和/或反应气体可经由排气管线11及排气泵单元15被排放。
反应器10、源气体旁通管道2及反应气体旁通管道4连接到单一排气管线11。因此，被旁通的源气体或反应气体的排放路径也为排气管线11，其可与被从反应器10吹洗的源气体或反应气体的排放路径相同。
另外，排气单元可包括粗抽阀(roughing valve)14，粗抽阀14被配置成控制反应器10中的压力。
如上所述，图1所示衬底处理装置100可为通过PEALD来沉积SiN膜的原子层沉积(atomic layer deposition，ALD)装置。也就是说，衬底处理装置100可重复进行源气体供应操作、源气体吹洗操作、反应气体供应操作、等离子体供应操作及反应气体吹洗操作。在此种情形中，DCS与NH3被交替地供应到反应器10以执行ALD工艺，且当DCS被供应到反应器10时，NH3可经由反应气体旁通管道4而排放到排气泵单元15，且当NH3被供应到反应器10时，DCS可经由源气体旁通管道2而排放到排气泵单元15。也就是说，源气体/反应气体可被以开关方式交替地供应到反应器10及对应旁通管道，从而维持持续流动状态，且因此，气体供应管道及反应器10中的压力脉动可减小，从而使得维持处理稳定性。为将薄膜形成工艺期间的压力脉动最小化，气体供应管线中的气体压力被保持为恒定。为此，举例来说，量与在源气体供应操作期间经由源气体供应管道1而供应到反应器10的源气体的量相同的源气体可在除源气体供应操作以外的操作期间经由源气体旁通管道2而供应到排气单元。
图2是说明根据本发明实施例的薄膜形成方法的示意图。
参照图2，薄膜形成方法可包括将源气体供应到反应器中的第一操作(操作201)、吹洗反应器中的源气体的第二操作(操作202)、将反应气体供应到反应器中的第三操作(操作203)、供应等离子体的第四操作(操作204)以及吹洗反应器中的反应气体的第五操作(操作205)。可依序地执行源气体供应、反应气体供应及等离子体供应。另外，可将第一操作(操作201)到第五操作(操作205)的循环重复若干次，直到形成具有所期望厚度的薄膜为止。
在第一操作到第五操作(操作201到205)期间，可将吹洗气体持续地供应到反应空间。吹洗气体使反应空间中的压力平均，且可在第二操作及第五操作(操作202及205)中从反应器吹洗源气体及反应气体。在第二操作(操作202)期间，可经由排气单元的排气管线而排放反应器中的源气体及吹洗气体。另外，在第五操作(操作205)期间，可经由排气单元的排气管线而排放反应器中的反应气体及吹洗气体。
同时，当经由源气体供应管道或反应气体供应管道而将源气体及反应气体中的一者供应到反应器时，可经由源气体旁通管道或反应气体旁通管道而将另一气体旁通到排气单元。另外，当将源气体及反应气体中的一者从反应器吹洗到排气单元时，可分别经由源气体旁通管道及反应气体旁通管道而将源气体及反应气体旁通到排气单元。
具体来说，在第一操作(操作201)中，在将源气体供应到反应器的同时，可经由反应气体旁通管道而将反应气体旁通到排气单元。在第二操作(操作202)中，在将源气体从反应器吹洗到排气单元的同时，可分别经由源气体旁通管道及反应气体旁通管道而将源气体及反应气体旁通到排气单元。在第三操作及第四操作(操作203及204)中，在将反应气体供应到反应器的同时，可经由源气体旁通管道而将源气体旁通到排气单元。在第五操作(操作205)中，在将反应气体从反应器吹洗到排气单元的同时，可分别经由源气体旁通管道及反应气体旁通管道而将源气体及反应气体旁通到排气单元。气体通过这些旁通管道排放是旨在维持气体的持续流动状态，且因此，气体供应管道及反应器中的压力可被保持为恒定。
如上所述，为通过将气体压力保持为恒定来使压力脉动最小化，可在除源气体供应操作以外的操作期间将量与在源气体供应操作期间供应的源气体的量相同的源气体供应到排气单元。相似地，可在除反应气体供应操作以外的操作期间将量与在反应气体供应操作期间供应的反应气体的量相同的反应气体供应到排气单元。
也就是说，如图2中所说明，在相同量的源气体在第一操作(操作201)期间经由源气体供应管道而供应到反应器且在第二操作到第五操作(操作202到205)期间经由源气体旁通管道而供应到排气单元的同时，相同量的反应气体在第三操作及第四操作(操作203及204)期间经由反应气体供应管道而供应到反应器且在第一操作、第二操作及第五操作(操作201、202及205)期间经由反应气体旁通管道而供应到排气单元。正因为这样，源气体及反应气体的供应流速在薄膜形成工艺期间保持恒定，且仅源气体及反应气体的供应方向可有所变化。也就是说，气体供应单元(特别是MFC)可持续地供应相同量的源气体和/或反应气体。因此，可能耗费比反应中所需的量大得多的源气体及反应气体。
如上所述，被旁通的气体的排放路径与从反应器排放的气体的排放路径相同。举例来说，在第二操作(操作202)中，源气体可从反应器排放，且反应气体可经由反应气体旁通管道而旁通。就这点来说，源气体从反应器排放的路径与被旁通的反应气体的排放路径可为相同的，即排气管线11(参见图1)。在此情形中，被引入到排气管线11中的源气体及反应气体可彼此反应以从而产生副产物。这些副产物可能对排气管线、排气泵及洗涤器的性能造成负面影响。将参照图3A到图3D对此予以更详细阐述。
图3A到图3D是说明图1所示衬底处理装置100执行图2所示薄膜形成方法的示意图。
参照图2及图3A，执行将源气体供应到反应器10的第一操作(操作201)。在第一操作(操作201)期间，经由源气体供应单元16、第一MFC7及源气体供应管道1而将源气体供应到反应器10，且经由反应气体供应单元18、第二MFC9及反应气体旁通管道4而将反应气体旁通到排气单元。为此，源气体供应阀v1及反应气体旁通阀v4可开启，且源气体旁通阀v2及反应气体供应阀v3可关闭。在此操作期间，吹洗气体供应阀v5、v6及v7可开启，且吹洗气体可被持续地供应到反应空间中，从而使得反应空间中的压力为恒定。
参照图2及图3B，执行将反应器10中的源气体经由排气管线11吹洗到排气单元的第二操作(操作202)。在第二操作(操作202)期间，经由源气体供应单元16、第一MFC7及源气体旁通管道2而将源气体旁通到排气单元，且经由反应气体供应单元18、第二MFC9及反应气体旁通管道4而将反应气体旁通到排气单元。为此，源气体供应阀v1及反应气体供应阀v3可关闭，且源气体旁通阀v2及反应气体旁通阀v4可开启。在此操作期间，吹洗气体供应阀v5、v6及v7保持开启且吹洗气体被持续地供应到反应空间中，从而吹洗反应器10中的源气体。
在此操作(操作202)期间，可将从反应器10吹洗的源气体、经由源气体旁通管道2而旁通的源气体及经由反应气体旁通管道4而旁通的反应气体引入到排气管线11中。如上所述，在源气体供应操作期间供应的源气体的流速与在源气体吹洗操作期间供应的源气体的流速相同。也就是说，源气体在源气体吹洗操作中经由源气体旁通管道2而以与被供应到反应器10的源气体的流速相同的流速旁通到排气单元。举例来说，2,000标准毫升/分钟(sccm)的DSC被供应到反应器10与排气单元二者。此外，被供应到反应器10的反应气体的流速与旁通到排放单元的反应气体的流速相同。正因为这样，当大量源气体与大量反应气体被同时引入到排气管线11中时，源气体与反应气体可在排气管线11中彼此反应从而产生反应副产物，且这些反应副产物可能作为固体余留在排气管线11中。这些残留固体使设备性能劣化且使设备的预防性维修(preventive maintenance，PM)循环减小，因此使实际操作时间减少。
参照图2及图3C，执行将反应气体供应至反应器10中的第三操作(操作203)及供应等离子体的第四操作(操作204)。在第三操作及第四操作(操作203及204)期间，经由反应气体供应单元18、第二MFC9及反应气体供应管道3而将反应气体供应到反应器10，且经由源气体供应单元16、第一MFC7及源气体旁通管道2而将源气体旁通到排气单元。为此，反应气体供应阀v3及源气体旁通阀v2可开启，且反应气体旁通阀v4及源气体供应阀v1可关闭。在此操作期间，吹洗气体供应阀v5、v6及v7可开启，且吹洗气体可被持续地供应到反应空间中，从而使得反应空间中的压力为恒定。
参照图2及图3D，执行将反应器10中的反应气体经由排气管线11吹洗到排气单元的第五操作(操作205)。在第五操作(操作205)期间，经由源气体供应单元16、第一MFC7及源气体旁通管道2而将源气体旁通到排气单元，且经由反应气体供应单元18、第二MFC9及反应气体旁通管道4而将反应气体旁通到排气单元。为此，源气体供应阀v1及反应气体供应阀v3可关闭，且源气体旁通阀v2及反应气体旁通阀v4可开启。在此操作期间，吹洗气体供应阀v5、v6及v7保持开启且吹洗气体被持续地供应到反应空间中，从而吹洗反应器10中的反应气体。
在此操作(操作205)期间，可将从反应器10吹洗的反应气体、经由源气体旁通管道2而旁通的源气体及经由反应气体旁通管道4而旁通的反应气体引入到排气管线11中。如上所述，在反应气体供应操作期间供应的反应气体的流速与在反应气体吹洗操作期间供应的反应气体的流速相同。也就是说，反应气体在反应气体吹洗操作中经由反应气体旁通管道4而以与被供应到反应器10的反应气体的流速相同的流速旁通到排气单元。此外，被供应到反应器10的源气体的流速与旁通到排放单元的源气体的流速相同。当大量源气体与大量反应气体被同时引入到排气管线11中时，源气体与反应气体可在排气管线11中彼此反应从而产生反应副产物，且这些反应副产物可作为固体余留在排气管线11中。这些残留固体使设备性能劣化且使设备的预防性维修(PM)循环减小，因此使实际操作时间减少。
图4是说明根据本发明其他实施例的薄膜形成方法的示意图。图4所示薄膜形成方法是一种解决因所产生的反应副产物使排气管线、排气泵及洗涤器的性能劣化且使预防性维修(PM)循环减小以及因大量源气体及反应气体被耗费掉而造成的前述问题的方法。在下文中，将不再对与前面各实施例中的元件相同的元件予以详细说明。
参照图4，薄膜形成方法可包括将源气体供应到反应器中的第一操作(操作401)、吹洗反应器中的源气体的第二操作(操作402)、将反应气体供应到反应器中的第三操作(操作403)、供应等离子体的第四操作(操作404)以及吹洗反应器中的反应气体的第五操作(操作405)。可依序地执行源气体供应、反应气体供应及等离子体供应。在源气体供应、反应气体供应及等离子体供应期间，也可将吹洗气体持续地供应到反应空间中。另外，可将第一操作(401)到第五操作(405)的循环重复若干次，直到形成具有所期望厚度的薄膜为止。
与图2中不同，根据图4所示薄膜形成方法，气体供应单元在供应源气体的第一操作(操作401)中将源气体供应到反应器，且在其他操作(操作402到405)中，气体供应单元可停止供应源气体且因此不将源气体供应到源气体旁通管道或者显著地降低被供应到源气体旁通管道的源气体的流速。相似地，气体供应单元在供应反应气体的第三操作(操作403)及第四操作(操作404)中将反应气体供应到反应器，且在其他操作(操作401、402及405)中，气体供应单元可停止供应反应气体且因此不将反应气体供应到反应气体旁通管道或者显著地降低被供应到反应气体旁通管道的反应气体的流速。然而，为完全停止供应源气体和/或反应气体，即为将源气体和/或反应气体的供应量调节为0，必须关闭一阀门(特别是放置在MFC内部的阀门)，而这是不便的，且当所述阀门在完全关闭之后重新开启时，气体管道内部的压力可能因流速变化而发生变化。因此，被旁通的源气体及反应气体的流速可能降低而不是被调节为0。因此，当气体流速变化时，压力所可能发生的巨大变化可最小化。具体来说，气体供应单元(特别是MFC)可在第一操作到第五操作期间持续地供应源气体及反应气体，但源气体及反应气体的流速可得到控制。举例来说，气体供应单元在第一操作(操作401)期间以第一流速R1供应源气体，同时在第二操作到第五操作(操作402到405)期间以比第一流速R1小的第三流速R3供应源气体。举例来说，第三流速R3可大于0且小于第一流速R1。举例来说，第三流速R3可介于第一流速R1的约1/8到约1/10范围内。相似地，气体供应单元在第三操作及第四操作(操作403及404)期间以第二流速R2供应反应气体，同时在第二操作及第五操作(操作402及405)期间以比第二流速R2小的第四流速R4供应反应气体。举例来说，第四流速R4可大于0且小于第二流速R2。第四流速R4可介于第二流速R2的约1/8到约1/10范围内。
在又一实施例中，薄膜形成方法可进一步包括在第一操作之前在第一预定周期tspf期间以第一流速R1供应源气体的源气体预流操作(操作406)。通过刚好在源气体被以第一流速R1供应到反应器之前以相同的流速(即源气体的第一流速R1)流动到旁通管线，源气体供应管道中的气体压力变化可最小化，从而使得薄膜形成工艺维持稳定。源气体预流操作(操作406)可根据第一预定周期tspf而在第二操作到第五操作(操作402到405)中的任一者期间开始。举例来说，源气体预流操作(操作406)可如图4中所说明在第五操作(操作405)期间开始，或者可如图5中所说明在第四操作(操作404)期间开始。举例来说，第二操作到第五操作(操作402到405)的总处理时间(t2+t3+t4+t5)可为1.5秒，且第一预定周期tspf可为1.3秒或小于1.3秒。
然而，如图5中所说明，当源气体预流操作(操作406)在操作404期间开始时，或者当源气体预流操作(操作406)在第二操作到第五操作(操作402到405)中的任一者期间开始时，来自反应器的大量反应气体与来自源气体旁通管道的大量(在此情形中，第一流速R1)源气体可在第五操作(操作405)期间被同时引入到排气管线11，从而产生大量反应副产物。另外，源气体可能在源气体预流操作(操作406)期间被耗费掉。因此，源气体预流操作(操作406)可在第五操作(操作405)期间开始。也就是说，第一预定周期tspf可小于第五操作的处理时间t5。
重新参照图4，与源气体预流操作(操作406)相似，薄膜形成方法可进一步包括在第三操作之前在第二预定周期trpf期间以第二流速R2供应反应气体的反应气体预流操作(操作407)。第二预定周期trpf可小于第二操作的处理时间t2。
在图4所示第二操作(操作402)期间，旁通到排气单元的源气体的流速可从第一流速R1逐渐减小到第三流速R3。在图4所示第五操作(操作405)期间，旁通到排气单元的源气体的流速可从第三流速R3逐渐增大到第一流速R1。在第二操作(操作402)及第五操作(操作405)中在旁通管道中流动的源气体的流速逐渐减小或逐渐增大是因为以下事实：旁通管道中的源气体的量由于所述旁通管道的物理长度而缓慢增大或缓慢减小。相似地，在第二操作(操作402)期间，旁通到排气单元的反应气体的流速可从第四流速R4逐渐增大到第二流速R2，且在第五操作(操作405)期间，旁通到排气单元的反应气体的流速可从第二流速R2逐渐减小到第四流速R4。
因此，为将在排气管线中产生的反应副产物最小化，如图6中所说明，可在于第五操作(操作405)期间旁通到排气单元的反应气体的流速从第二流速R2减小到第四流速R4之后开始源气体预流操作(操作406)。也就是说，在旁通到排气单元的反应气体的流速从第二流速R2减小到第四流速R4的时间ti之后，可在时间tj处开始源气体预流操作(操作406)。
相似地，为将在排气管线中产生的反应副产物最小化，如图6中所说明，可在于第二操作期间旁通到排气单元的源气体的流速从第一流速R1减小到第三流速R3(操作402)之后开始反应气体预流操作(操作407)。也就是说，在旁通到排气单元的源气体的流速从第一流速R1减小到第三流速R3的时间tx之后，可在时间ty处开始反应气体气预流操作(操作407)。
图7A到图7D是说明图1所示衬底处理装置100执行图4所示薄膜形成方法的示意图。在下文中，将不再对与前面各实施例中的元件相同的元件予以详细说明。
参照图4及图7A，执行将源气体供应到反应器10中的第一操作(操作401)。在第一操作(操作401)期间，可经由源气体供应单元16、第一MFC7及源气体供应管道1而将源气体以第一速率R1供应到反应器10中。为以第一流速R1供应源气体，可将第一MFC7编程为在第一操作(操作401)期间以第一流速R1供应源气体。在第一操作(操作401)期间，可经由反应气体供应单元18、第二MFC9及反应气体旁通管道4而将反应气体以第四速率R4旁通到排气管线11。为以第四流速R4供应反应气体，可将第二MFC9编程为在第一操作(操作401)期间以第四流速R4供应反应气体。
参照图4及图7B，执行吹洗反应器10中的源气体的第二操作(操作402)。在第二操作(操作402)期间，可经由源气体供应单元16、第一MFC7及源气体旁通管道2而将源气体以比第一流速R1小的第三流速R3旁通到排气单元。为以第三流速R3供应源气体，可将第一MFC7编程为在第二操作(操作402)期间以第三流速R3供应源气体。另外，在第二操作(操作402)期间，可经由反应气体供应单元18、第二MFC9及反应气体旁通管道4而将反应气体以比第二流速R2小的第四流速R4旁通到排气单元。为以第四流速R4供应反应气体，可将第二MFC9编程为在第二操作(操作402)期间以第四流速R4供应反应气体。在又一实施例中，如上所述，可执行反应气体预流操作(操作407)。为执行反应气体预流操作(操作407)，可将第二MFC9编程为在第三操作(操作403)之前在第二预定周期trpf期间以第二流速R2供应反应气体。
在第二操作(操作402)期间，可将从反应器10吹洗的源气体、经由源气体旁通管道2而以第三流速R3旁通的源气体及经由反应气体旁通管道4而以第四流速R4旁通的反应气体引入到排气管线11中。因此，随着被旁通的反应气体的流速减小，即随着第四流速R4减小，在第二操作(操作402)期间在排气管线11中反应的源气体及反应气体的量可减少。
参照图4及图7C，执行将反应气体供应至反应器10中的第三操作(操作403)及施加等离子体的第四操作(操作404)。在第三操作及第四操作(操作403及404)期间，可经由反应气体供应单元18、第二MFC9及反应气体供应管道3而将第二流速R2的反应气体供应到反应器10。为供应第二流速R2的反应气体，可将第二MFC9编程为在第三操作及第四操作(操作403及404)期间以第二流速R2供应反应气体。另外，在第三操作及第四操作(操作403及404)期间，可经由源气体供应单元16、第一MFC7及源气体旁通管道2而将第三流速R3的源气体旁通到排气单元。为供应第三流速R3的源气体，可将第一MFC7编程为在第三操作及第四操作(操作403及404)期间以第三流速R3供应源气体。
参照图4及图7D，执行吹洗反应器10中的反应气体的第五操作(操作405)。在第五操作(操作405)期间，可经由反应气体供应单元18、第二MFC9及反应气体旁通管道4而将第四流速R4的反应气体旁通到排气单元。为供应第四流速R4的反应气体，可将第二MFC9编程为在第五操作(操作405)期间以第四流速R4供应反应气体。另外，在第五操作(操作405)期间，可经由源气体供应单元16、第一MFC7及源气体旁通管道2而将第三流速R3的源气体旁通到排气单元。为供应第三流速R3的源气体，可将第一MFC7编程为在第五操作(操作405)期间以第三流速R3供应源气体。在又一实施例中，如上所述，可执行源气体预流操作(操作406)。为执行源气体预流操作(操作406)，可将第一MFC7编程为在第一操作(操作401)之前在第一预定周期tspf期间以第一流速R1供应反应气体。
在第五操作(操作405)期间，可将从反应器10吹洗的反应气体、经由源气体旁通管道2而旁通的第三流速R3的源气体及经由反应气体旁通管道4而旁通的第四流速R4的反应气体引入到排气管线11中。因此，随着被旁通的源气体的流速减小，即随着第三流速R3减小，在第五操作(操作405)期间在排气管线11中反应的源气体及反应气体的量可减少。
如上所述，第一MFC7、第三MFC8及第二MFC9可为数控MFC。因此，根据本发明的衬底处理装置可在不控制阀门的条件下通过对MFC适宜地编程来调节源气体及反应气体在薄膜形成工艺的每一操作中的流速。
一种使用图7A-图7D所示衬底处理装置100的MFC来控制气体的流速以执行图4所示薄膜形成工艺的方法将被详细阐述如下：
1)可将第一流速R1、比第一流速R1小的第三流速R3及第一操作到第五操作的相应处理时间周期t1到t5输入到第一MFC7。可将第一MFC7编程为基于所输入的第一流速R1、所输入的第三流速R3及所输入的第一操作到第五操作的相应处理时间周期t1到t5而将源气体的量调节成对应于每一时间周期。
具体来说，可将第一MFC7编程为在第一操作(操作401)期间以第一流速R1供应源气体以及在第二操作到第五操作(操作402到405)期间以第三流速R3供应源气体。
2)在又一实施例中，为将源气体供应管道中的气体压力脉动最小化，第一MFC7可使相同流速(即第一流速R1)的源气体刚好在以第一流速R1将源气体供应到反应器之前流动到旁通管线。为此，可将第一MFC7编程为在第一操作(操作401)期间以第一流速R1供应源气体、在第一操作(操作401)之后以第三流速R3供应源气体以及在第一操作(操作401)之前在第一预定周期tspf期间以第一流速R1供应源气体。
3)如上所述，第三流速R3可为0或高于0。因此，第一MFC7可在第一操作到第五操作(操作401到405)期间持续地供应源气体，且因此，第一MFC7中的阀门不需要重复地开启及关闭。
4)可将第二流速R2、比第二流速R2小的第四流速R4及第一操作到第五操作的相应处理时间周期t1到t5输入到第二MFC9。可将第二MFC9编程为基于所输入的第二流速R2、所输入的第四流速R4及所输入的第一操作到第五操作的相应处理时间周期t1到t5而将反应气体的量调节成对应于每一时间周期。
具体来说，可将第二MFC9编程为在第三操作及第四操作(操作403及404)期间以第二流速R2供应反应气体以及在第一操作、第二操作及第五操作(操作401、402及405)期间以第四流速R4供应反应气体。
5)在又一实施例中，为在第三操作(操作403)中将反应气体供应管道中的气体压力脉动最小化，第二MFC9可使相同流速(即第二流速R2)的反应气体刚好在以第二流速R2将反应气体供应到反应器之前流动到旁通管线。为此，可将第二MFC9编程为在第三操作及第四操作(操作403及404)期间以第二流速R2供应反应气体、在第四操作(操作404)之后以比第二流速R2小的第四流速R4供应反应气体以及在第三操作(操作403)之前在第二预定周期trpf期间以第二流速R2供应反应气体。
6)如上所述，第四流速R4可为0或高于0。因此，第二MFC9可在第一操作到第五操作(操作401到405)期间持续地供应反应气体，且因此，第二MFC9中的阀门不需要重复地开启及关闭。
7)也就是说，第一MFC7可控制源气体供应管道1及源气体旁通管道2中的气体的流速。具体来说，为解决前述问题，可将第一MFC7配置成使得源气体旁通管道2中的气体的流速小于源气体供应管道1中的气体的流速。
相似地，第二MFC9可控制反应气体供应管道3及反应气体旁通管道4中的气体的流速。具体来说，为解决前述问题，可将第二MFC9配置成使得反应气体旁通管道4中的气体的流速小于反应气体供应管道3中的气体的流速。
8)总之，可将第一MFC7及第二MFC9编程为当源气体及反应气体旁通到排气管线11时分别减小对应气体的流速且当源气体及反应气体被供应到反应器10时分别增大对应气体的流速。
图8说明当使用图4所示薄膜形成方法时在第二操作到第五操作(操作402到405)期间经由源气体旁通管道2所使用的DCS源的消耗随源气体预流操作(操作406)的第一预定周期tspf而变化的关系、以及作为结果而沉积的SiN薄膜的厚度。在一个实施例中，其中不供应源气体的操作(即第二操作到第五操作(操作402到405))可被执行达1.5秒。图2所示薄膜形成方法与其中图4所示源气体预流操作(操作406)的第一预定周期tspf被设定为1.5秒的情形相同。为1.5秒的第一预定周期tspf是作为图8的参考值而设定，其对应于图2所示情形。由于源气体预流操作(操作406)的第一预定周期tspf以0.2秒为间隔从0.7秒增大到1.3秒，因此当第一预定周期tspf为0.7秒时经由源气体旁通管道2而排放的源气体的量与当第一预定周期tspf为1.5秒(即，参考值)时所排放的源气体的量相比减少了约60％。另外，证实了第一预定周期tspf的长度并未影响沉积在反应器10中的SiN薄膜，特别是所述SiN薄膜的厚度。具体来说，显然，即使当第一预定周期tspf为0.7秒时，仍沉积有具有与现有SiN薄膜(即，参考值)相同厚度的SiN薄膜。这是因为在源气体供应操作(操作401)中供应到反应器10的源气体对在反应器10中在衬底上形成SiN薄膜有所贡献，且在其他操作(操作402到405)中旁通的源气体对在反应器10中形成SiN薄膜毫无贡献。
图9说明当使用图4所示薄膜形成方法时SiN薄膜的均匀度随源气体预流操作(操作406)的第一预定周期tspf而变化的关系。
与图8所示实验相似，由于图4所示源气体预流操作(操作406)的第一预定周期tspf以0.2秒为间隔从0.7秒增大到1.3秒，因此证实了无论源气体预流操作(操作406)的第一预定周期tspf的长度如何，SiN薄膜均比较均匀。也就是说，证实了第一预定周期tspf的长度并未影响沉积在反应器10中的SiN薄膜，特别是所述SiN薄膜的均匀度。
还证实了根据图4所示薄膜形成方法而沉积的薄膜的均匀度比根据图2所示薄膜形成方法而沉积的薄膜的均匀度好。这是因为排气管线、排气泵及洗涤器所受的负担及损害通过减少经由旁通管道而排放的源气体的消耗而最小化，且源气体供应管道中的压力脉动通过源气体预流操作(操作406)而最小化。
通过图8及图9所示实验，证实了经由旁通管道而排放的气体并不影响沉积在反应器中的薄膜。还证实了通过使用图4所示薄膜形成工艺，不仅经由旁通管道而排放的气体的消耗可降低，而且排气管线、排气泵及洗涤器所受的负担及损害也可最小化，而不会影响沉积在反应器中的薄膜，因此使设备的预防性维修(PM)循环增大且对提高生产率有所贡献。
尽管以上所述实施例中已主要阐述ALD工艺或PEALD工艺，然而这是仅出于说明性目的而提供。应注意，本发明的技术精神可适用于除PEALD工艺以外的化学气相沉积(chemical vapor deposition，CVD)工艺、清洁工艺(cleaning process)及需要将流体单独排放的任何其他工艺。
如阅读前述说明会显而易见，在衬底处理装置的薄膜形成工艺中，可通过降低对反应无贡献的非必要源气体及反应气体的消耗来节省设备的拥有成本(cost ofownership，CoO)。另外，根据本发明的一个实施例，一种包括单一排气管线的衬底处理装置的薄膜形成工艺通过降低未被供应到反应器而是经由旁通管道而排放的气体的消耗而使得所述装置因排气管道中产生反应副产物而受的负担及损害可最小化、排气管线、排气泵及洗涤器的预防性维修(PM)循环可增大且生产率可提高。
应理解，本文中所述的实施例应被视为仅具有说明性意义，而并非用于限制目的。对每一实施例内的特征或方面的说明通常应被视为可用于其它实施例中的其他相似特征或方面。
尽管已参照各附图阐述了一个或多个实施例，然而所属领域中的普通技术人员应理解，在不背离由以上权利要求所界定的本公开内容的精神及范围的条件下，可在本文中作出各种形式及细节上的变化。

Claims (20)

1.一种薄膜形成方法，其特征在于，包括：
第一操作，经由第一质量流控制器而将源气体以第一流速供应到反应器中；
第二操作，将所述反应器中的所述源气体吹洗到排气单元；
第三操作，经由第二质量流控制器而将反应气体以第二流速供应到所述反应器中；
第四操作，将等离子体供应到所述反应器中；以及
第五操作，将所述反应器中的所述反应气体吹洗到所述排气单元，
其中，在所述第二操作到所述第五操作期间，所述源气体经由所述第一质量流控制器而旁通到所述排气单元，且
旁通到所述排气单元的所述源气体的流速小于所述第一流速。
2.根据权利要求1所述的薄膜形成方法，其特征在于，被旁通的所述源气体的排放路径与经吹洗的所述源气体或所述反应气体从所述反应器排放的路径相同。
3.根据权利要求1所述的薄膜形成方法，其特征在于，将所述第一流速、第三流速及所述第一操作到所述第五操作的相应处理时间周期输入到所述第一质量流控制器，所述第三流速小于所述第一流速，且将所述第一质量流控制器编程为基于所输入的所述第一流速、所输入的所述第三流速及所输入的所述第一操作到所述第五操作的所述相应处理时间周期来调节所述源气体的量。
4.根据权利要求3所述的薄膜形成方法，其特征在于，将所述第一质量流控制器编程为：
在所述第一操作期间以所述第一流速供应所述源气体；以及
在所述第二操作到所述第五操作期间以所述第三流速供应所述源气体。
5.根据权利要求4所述的薄膜形成方法，其特征在于，在所述第二操作期间旁通到所述排气单元的所述源气体的流速从所述第一流速逐渐减小到所述第三流速，且
在所述第五操作期间旁通到所述排气单元的所述源气体的所述流速从所述第三流速逐渐增大到所述第一流速。
6.根据权利要求3所述的薄膜形成方法，其特征在于，所述第三流速大于0且小于所述第一流速。
7.根据权利要求6所述的薄膜形成方法，其特征在于，所述第三流速为所述第一流速的1/8到1/10。
8.根据权利要求3所述的薄膜形成方法，其特征在于，将所述第一质量流控制器编程为：
在所述第一操作期间以所述第一流速供应所述源气体；
在所述第一操作之后以所述第三流速供应所述源气体；以及
在所述第一操作之前在第一预定周期期间以所述第一流速供应所述源气体。
9.根据权利要求8所述的薄膜形成方法，其特征在于，所述第一预定周期短于所述第五操作的所述处理时间。
10.根据权利要求8所述的薄膜形成方法，其特征在于，所述第二操作到所述第五操作的总处理时间为1.5秒，且
所述第一预定周期为1.3秒或小于1.3秒。
11.根据权利要求8所述的薄膜形成方法，其特征在于，所述第一预定周期的长度不影响沉积在所述反应器中的薄膜的性质。
12.根据权利要求11所述的薄膜形成方法，其特征在于，所述第一预定周期的所述长度不影响沉积在所述反应器中的所述薄膜的厚度及均匀度。
13.根据权利要求1所述的薄膜形成方法，其特征在于，所述第一质量流控制器在所述第一操作到所述第五操作期间持续地输送所述源气体。
14.根据权利要求3所述的薄膜形成方法，其特征在于，在所述第一操作、所述第二操作及所述第五操作期间经由所述第二质量流控制器而将所述反应气体旁通到所述排气单元，
将所述第二流速、第四流速及所述第一操作到所述第五操作的相应处理时间周期输入到所述第二质量流控制器，所述第四流速小于所述第二流速，且
将所述第二质量流控制器编程为基于所输入的所述第二流速、所输入的所述第四流速及所输入的所述第一操作到所述第五操作的所述相应处理时间周期而：
在所述第三操作及所述第四操作期间以所述第二流速供应所述反应气体；以及
在所述第一操作、所述第二操作及所述第五操作期间以所述第四流速供应所述反应气体。
15.根据权利要求14所述的薄膜形成方法，其特征在于，被旁通的所述源气体或所述反应气体的排放路径与经吹洗的所述源气体或所述反应气体从所述反应器排放的路径相同，
随着所述第四流速减小，在所述第二操作期间在所述排放路径中反应的所述源气体及所述反应气体的量减少，且
随着所述第三流速减小，在所述第五操作期间在所述排放路径中反应的所述源气体及所述反应气体的所述量减少。
16.根据权利要求5所述的薄膜形成方法，其特征在于，在所述第一操作、所述第二操作及所述第五操作期间经由所述第二质量流控制器而将所述反应气体旁通到所述排气单元，
将所述第二质量流控制器编程为：
在所述第三操作及所述第四操作期间以第二流速供应所述反应气体；
在所述第四操作之后以第四流速供应所述反应气体，所述第四流速小于所述第二流速；以及
在所述第三操作之前在第二预定周期期间以所述第二流速供应所述反应气体，且
所述第二预定周期是在于所述第二操作期间旁通到所述排气单元的所述源气体的所述流速减小到所述第三流速之后开始。
17.一种执行薄膜形成工艺的衬底处理装置，其特征在于，所述衬底处理装置包括：
气体供应单元；
反应器；
排气单元，包括单一排气管线且经由所述单一排气管线而连接到所述反应器；以及
排气泵单元，经由所述单一排气管线而连接到所述排气单元，
其中所述气体供应单元包括：
第一气体供应管道，源气体经由所述第一气体供应管道而被从所述气体供应单元供应到所述反应器；
第二气体供应管道，反应气体经由所述第二气体供应管道而被从所述气体供应单元供应到所述反应器；
第一旁通管道，从所述第一气体供应管道分支出来且连接到所述排气单元；以及
第二旁通管道，从所述第二气体供应管道分支出来且连接到所述排气单元，
其中，当所述源气体及所述反应气体中的一者经由所述第一气体供应管道或所述第二气体供应管道而供应到所述反应器时，所述气体供应单元被配置成使所述源气体及所述反应气体中的另一气体经由所述第一旁通管道或所述第二旁通管道而旁通到所述排气单元，且
当所述源气体及所述反应气体中的一者被从所述反应器吹洗到所述排气单元时，所述气体供应单元被配置成使所述源气体及所述反应气体分别经由所述第一旁通管道及所述第二旁通管道而旁通。
18.根据权利要求17所述的衬底处理装置，其特征在于，所述气体供应单元进一步包括至少一个质量流控制器，
其中将所述至少一个质量流控制器编程为当所述源气体或所述反应气体旁通到所述排气单元时减小对应气体的流速。
19.一种执行薄膜形成工艺的衬底处理装置，其特征在于，
其中所述薄膜形成工艺包括：
第一操作，供应源气体；
第二操作，吹洗所述源气体；
第三操作，供应反应气体；
第四操作，施加等离子体；以及
第五操作，吹洗所述反应气体，且
所述衬底处理装置包括：
气体供应单元；
反应器；
排气单元，包括单一排气管线且经由所述单一排气管线而连接到所述反应器；以及
排气泵单元，经由所述单一排气管线而连接到所述排气单元，
其中所述气体供应单元包括：
第一气体供应管道，源气体经由所述第一气体供应管道而被从所述气体供应单元供应到所述反应器；
第二气体供应管道，反应气体经由所述第二气体供应管道而被从所述气体供应单元供应到所述反应器；
第一旁通管道，从所述第一气体供应管道分支出来且连接到所述排气单元；以及
第二旁通管道，从所述第二气体供应管道分支出来且连接到所述排气单元，且
所述气体供应单元被配置成：
在所述第一操作期间经由所述第一气体供应管道而将所述源气体供应到所述反应器；
在所述第二操作到所述第五操作期间经由所述第一旁通管道而将所述源气体供应到所述排气单元；
在所述第三操作及所述第四操作期间经由所述第二气体供应管道而将所述反应气体供应到所述反应器；以及
在所述第一操作、所述第二操作及所述第五操作期间经由所述第二旁通管道而将所述反应气体供应到所述排气单元。
20.根据权利要求19所述的衬底处理装置，其特征在于，所述气体供应单元进一步包括第一质量流控制器及第二质量流控制器，
其中所述第一质量流控制器被配置成控制所述第一气体供应管道及所述第一旁通管道中的气体的流速，从而使得所述第一旁通管道中的所述流速小于所述第一气体供应管道中的所述流速，且
所述第二质量流控制器被配置成控制所述第二气体供应管道及所述第二旁通管道中的气体的流速，从而使得所述第二旁通管道中的所述流速小于所述第二气体供应管道中的所述流速。
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