CN108231624B - 基板处理设备 - Google Patents
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Abstract
本发明公开了一种基板处理设备,包括:具有至少一个通孔的分隔件,通过所述通孔布置在所述分隔件中的导管,与所述导管连接的气体供给单元,以及设置在所述通孔的侧壁和所述导管之间的低介电材料。
Description
相关申请的交叉引用
本申请要求在2016年12月14日在韩国知识产权局提交的韩国专利申请第10-2016-0170410号申请的优先权,其公开内容通过引用整体并入本文。
技术领域
一个或多个实施方式涉及基板处理设备,并且更具体地,涉及能够防止寄生等离子体生成的基板沉积设备。
背景技术
在制造半导体器件的过程中,随着电线宽度的减小,要求更精确的工艺控制。在作为重要的半导体工艺之一的薄膜沉积工艺中,已经为实现高的薄膜均匀性的做出了许多努力。
均匀膜沉积的主要因素之一是气体供给单元。普通气体供给装置采用喷头方法。喷头方法具有以同轴形式将气体均匀地供给到基板上的优点。
等离子体被用于确保相对较快的响应速度。需要在反应空间中均匀地生成等离子体。当在不需要的空间中产生等离子体时,可能会在设备中出现缺陷。而且,当等离子体不均匀地分布在基板上时,膜的质量可能下降。
发明内容
一个或多个实施方式包括可防止寄生等离子体生成的基板沉积设备。
一个或多个实施方式包括可防止等离子体功率泄漏的基板处理设备。
其他的方面将在下述内容中被部分地阐述,并且将部分地从描述中变得显而易见,或者可以通过实践本申请实施方式而被了解。
根据一个或多个实施方式,一种基板处理设备包括:分隔件,其包括至少一个通孔;通过通孔布置在分隔件中的导管;连接到导管的气体供给单元;以及在通孔的侧壁和导管之间的低介电材料。
低介电材料可以包括空气。
可以在基板处理设备中形成至少一个用于连接空气和外部的路径。
可以在分隔件和导管之间形成路径。
可以在分隔件中形成路径。
分隔件可以包括朝向气体供给单元突出的突起,并且低介电材料可以接触突起的一个侧表面。
分隔件可以包括位于形成通孔的区域中的台阶部,导管可以包括凸缘,并且导管可以通过凸缘和台阶部之间的联接而连接到分隔件。
可以在台阶部和凸缘之间形成与外部空气连通的路径。
基板处理设备还可以包括布置在分隔件和气体供给单元之间的绝缘板。
基板处理设备还可以包括射频(RF)杆,所述射频杆通过贯穿分隔件的至少一部分和绝缘板而连接到气体供给单元。
通孔可以在第一区域中具有第一直径,并且在第一区域的下部中具有比第一直径大的第二直径。
通孔的至少一部分的直径可朝向气体供给单元连续地增加。
通孔的至少一部分的侧截面轮廓可以具有钟形的形状。
根据一个或多个实施例,一种基板处理设备包括:分隔件,其包括至少一个通孔;绝缘导管,其通过通孔布置在分隔件中;气体供给单元,其连接到绝缘导管;布置在分隔件和气体供给单元之间的绝缘板;以及通过贯穿绝缘板而连接到气体供给单元的射频(RF)杆,其中,分隔件包括与绝缘板接触的至少一个第一突起部分,和与绝缘板接触并布置在第一突起部分和绝缘导管之间的至少一个第二突起部分,RF杆布置在第一突起部分和第二突起部分之间,并且空气填充的空间形成于分隔件与绝缘板之间、通孔的侧壁和绝缘导管之间、以及第一突起部分和第二突起部分之间。
第二突起部分可以连续地形成在绝缘导管周围。第二突起部分可以进一步包括路径。路径可以形成为连接第一分隔件与第二分隔件之间的空间和第二分隔件与绝缘导管之间的空间。或者,第二突起部分可以不连续地形成在绝缘导管周围。
根据一个或多个实施方式,一种基板处理设备包括:提供气体供给通道的分隔件,连接到气体供给通道的气体供给单元,以及分隔件和气体供给单元之间的空气,其中,分隔件包括在至少一个朝向气体供给单元突出的第一突起部分,并且空气接触第一突起部分的一个侧表面。
第一突起部分可以布置在与气体供给单元重叠的区域中。
第一突起部分的至少一部分可以布置在不与气体供给单元重叠的区域中。
分隔件还可以包括朝向气体供给单元突出并布置在第一突起部分和气体供给通道之间的至少一个第二突起部分,并且可以在第一突起部分和第二突起部分之间、以及在气体供给通道和第二突起部分之间设置空气。
基板处理设备还可以包括射频(RF)杆,其连接到气体供给单元并且布置在第一突起部分和第二突起部分之间。
基板处理设备可以进一步包括被布置成接触空气的吸湿件。
第二突起部分可以连续地形成在气体供给通道周围。例如,第二突起部分还可以包括路径。路径可以形成为连接第一分隔件和第二分隔件之间的空间与第二分隔件和气体供给通道之间的空间。或者,第二突起部分可以不连续地形成在气体供给通道周围。
附图说明
结合附图,从下文对实施方式的描述中,这些和/或其它方面将变得清楚并且更容易理解,在附图中:
图1和图2是根据实施方式的基板处理设备的示意性截面图;
图3和图4是根据其他实施方式的基板处理设备的示意性截面图;
图5和图6是根据其他实施方式的基板处理设备的示意性截面图;
图7是根据本公开的实施方式的基板处理设备的示意性截面图;
图8和图9是根据图7的实施方式的修改示例的示意性截面图;
图10是根据本公开的实施方式的基板处理设备的示意性截面图;
图11是根据本公开的实施方式的基板处理设备的示意性截面图;
图12和图13是根据其他实施方式的基板处理设备的示意性截面图;
图14是基板处理设备的排放部分的放大截面图;
图15至17是根据其他实施方式的反应器和包括反应器的基板处理设备的示意性透视图;
图18和图19示意性地示出了根据其他实施方式的反应器的结构;
图20和图21示意性地示出了根据其他实施方式的背板的结构;
图22至24分别是根据本公开的实施方式的包括在气体供给单元中的气体通道的透视图、俯视图、和仰视图;
图25和图26示出贯穿背板和气体通道的第四通孔和第五通孔的各种实施方式;和
图27和图28是示出根据本公开的实施方式的在反应器中通过等离子体增强原子层沉积(PEALD)方法沉积在基板上的SiO2膜的厚度的图。
具体实施方式
现在将详细参考实施方式,其示例在附图中示出,其中相同的附图标记始终表示相同的元件。就这一点而言,本公开的实施方式可以具有不同的形式,而不应该被解释为限制于本文的描述。因此,下面仅通过参考附图来描述实施方式,以解释本说明书的各个方面。如本文所使用的,术语“和/或”包括关于一个或多个相关所列项目的任何和所有组合。诸如“至少一个”这样的表达当其在元素列表之前时,修饰整个元素列表并且不修改列表的单个元素。
提供实施方式以向本领域的普通技术人员进一步完整地解释本发明构思。然而,本发明构思不限于此,并且可以理解的是,在不脱离所附权利要求的精神和范围的情况下,可以在形式和细节上进行各种改变。也就是说,可以为了解释本发明构思的实施方式而仅对特定结构或功能进行描述。
本说明书中使用的术语用于解释具体实施方式,而不是用于限制本发明构思。因此,除非在上下文中另外明确指定,否则本说明书中的单数的表达包括复数的表示。而且,诸如“包含”和/或“包括”的术语可以被解释为表示某个特征、数量、步骤、操作、组成元素、或其组合,但是不能被解释为排除一个或多个其他特征、数字、步骤、操作、组成元素、或其组合的存在或可能性。如在本说明书中所使用的,术语“和/或”包括所列项目的任意一个或至少一种项目组合的全部。
在本说明书中,诸如“第一”和“第二”的术语在本文中仅用于描述各种构件、部件、区域、层和/或部分,但是组成元件不受这些术语限制。显而易见的是,构件、部件、区域、层和/或部分不受术语限制。这些术语仅用于区分一个构成要素和另一个构成要素的目的。因此,在不偏离本发明构思的正确范围的情况下,第一构件、部件、区域、层、或部分可以指代第二构件、部件、区域、层、或部分。
在下文中,参考附图详细描述本发明构思的实施方式。在附图中,所示形状可以根据例如制造技术和/或公差来修改。因此,本发明构思的实施方式不能被解释为限于本说明书中描述的部分的特定形状,并且可以包括例如在制造期间产生的形状的变化。
图1和图2是根据本公开实施方式的基板处理设备的示意性截面图。
如图1和图2所示,每个基板处理设备可以包括分隔件110、导管120、气体供给单元130、射频(RF)杆140、和基板支撑单元150。尽管在本说明书所描述的基板处理设备的示例可以包括用于半导体或显示基板的沉积设备,但是本公开不限于此。基板处理设备可以是进行用于膜形成的材料沉积所需的任何设备,或者可以指用于均匀地供给用于材料的蚀刻或抛光的源材料的设备。在以下的描述中,为了便于解释,我们假设基板处理设备是半导体薄膜沉积设备。
分隔件110可以是反应器的构成元件。换句话说,用于处理例如基板的沉积、蚀刻、或抛光的反应空间160可以通过分隔件的结构形成。例如,分隔件110可以包括至少一个通孔TH1。气体供给通道可以通过分隔件110的通孔TH1设置。
导管120可以通过通孔TH1布置在分隔件110中。导管120可以是基板处理设备的气体供给通道。当沉积设备是原子层沉积设备时,可以通过导管120供给源气体、净化气体和/或反应气体。导管120可以包括绝缘材料。在一些实施方式中,导管120可以是由绝缘材料形成的绝缘导管。
气体供给单元130可以连接到作为气体供给通道的导管120。气体供给单元130可以被固定到反应器。例如,气体供给单元130可以通过固定构件(未示出)固定到分隔件110。气体供给单元130可以被配置为在反应空间160中朝向目标对象S供给气体。例如,气体供给单元130可以是被配置为均匀地供给气体的喷头组件。
RF杆140可以通过贯穿分隔件110的至少一部分而连接到气体供给单元130。RF杆140可以连接到外部等离子体供给单元(未示出)。虽然图2示出了两个RF杆140,但是本公开不限于此,并且可以安装多于两个的RF杆以改善供给到反应空间160的等离子体功率的均匀性。此外,尽管在附图中未示出,为了切断RF杆140和分隔件110之间的电连接,可以在RF杆140和分隔件110之间设置绝缘体。
气体供给单元130可以是导电体并且可以用作产生等离子体的电极。换句话说,当气体供给单元130连接到RF杆140时,气体供给单元130可以用作产生等离子体的电极。采用上述使用气体供给单元130作为电极的方法的气体供给单元130在下面的描述中可以被称为气体供给电极。
基板支撑单元150可以被配置为提供其中容纳诸如半导体或显示基板的目标对象S的区域。此外,基板支撑单元150可以被构造成接触分隔件110的下表面。例如,基板支撑单元150可以由能够执行垂直和旋转运动的支撑部分(未示出)支撑。当基板支撑单元150通过支撑部分的运动与分隔件110分离或与分隔件110接触时,反应空间160可被打开或关闭。此外,基板支撑单元150可以是导电体,并且可以用作产生等离子体的电极,即,气体供给电极的对电极。
可以在导管120和分隔件110的通孔TH1的侧壁之间形成空的空间170。空的空间170可以由低介电材料填充。在一个示例中,低介电材料可以包括空气。此外,除了空气之外,低介电材料可以包括选自以下中的任意一者及其组合:氢倍半硅氧烷(HSQ)、甲基倍半硅氧烷(MSQ)、无定形氟碳(aC:F)、氟氧化硅(SiOF),碳氧化硅(SiOC)和多孔二氧化硅(SiO2)。
空的空间170或低介电材料(例如空气)可防止产生寄生等离子体。例如,当对气体供给电极130施加电压以产生等离子体时,可以在气体供给电极130与基座电极150之间的空间以外的空间中产生寄生等离子体。寄生等离子体可以在例如分隔件110和气体供给电极130之间的空间中产生,或在分隔件110和导管120之间的空间中产生。空的空间170或以低介电材料(例如空气)填充的空间170可防止产生寄生等离子体。
因此,根据本发明构思的实施方式,可解决由寄生等离子体产生的污染颗粒、腔室内部的污染、以及根据污染颗粒的处理结果质量的恶化。
分隔件110可以包括朝向气体供给单元130突出的突起180。突起180的至少一部分可以布置在与气体供给单元130重叠的区域或不与气体供给单元重叠的区域130。在一些实施方式中,突起180的至少一部分可以布置在不与其中容纳有目标对象S的基板支撑单元150的区域C重叠的区域中。在一些实施方式中,突起180可以不完全重叠其中容纳有目标对象S的基板支撑单元150的区域C。
突起180的一个侧表面可以接触低介电材料。更详细地,突起180可以接触气体供给单元130(或绝缘板)。在垂直于接触表面的侧壁中,面对气体供给通道(例如导管120)的侧壁可以接触低介电材料,例如空气。
为了实现突起180的侧壁,分隔件110的通孔TH1可以在第一区域中具有第一直径,并且在第一区域下方的第二区域中可以具有比第一直径大的第二直径。换句话说,布置在第一区域中的通孔TH1的第一部分可以具有提供气体供给通道或容纳导管120的第一直径,而布置在第二区域中的通孔TH1的第二部分可具有大于第一直径的第二直径以提供突起180。
当低介电材料是空气时,可以在基板处理设备中形成至少一个连接空气和外部的路径。路径可以是在分隔件110和导管120之间形成的路径P1。此外,路径可以是在RF杆140和分隔件110之间形成的路径P2,或者形成在分隔件110中的路径(未示出)。
图3和图4是根据其他实施方式的基板处理设备的示意性截面图。根据本公开的实施方式的基板处理设备可以是根据上述实施方式的基板处理设备的修改示例。在下面的描述中省略了实施方式之间的冗余描述。
参照图3和图4,根据本实施方式的基板处理设备可以包括分隔件110、气体供给单元130、RF杆14和基板支撑单元150。在本公开的实施方式中,基板处理设备的分隔件110可构造成提供气体供给通道115。在一些实施方式中,可在气体供给通道115中设置导管。
除了上述的突起180之外,基板处理设备的分隔件110还可以包括突起185。像突起180一样,突起185可以朝向气体供给单元130突出。此外,可以填充空的空间的低介电材料可以接触突起180的一个侧表面和突起185的一个侧表面。
在下面的描述中,为了区分突起180和突起185,突起180可被称为第一突起,突起185可被称为第二突起。然而,上述指示仅仅是为了便于解释,并且权利要求书中限定的第一突起可以指突起180或突起185。
与第一突起180相反,第二突起185整个布置在与气体供给单元130重叠的区域中。此外,第二突起185整个布置在与容纳有目标对象S的基板支撑单元150的区域C重叠的区域中。在一些实施方式中,突起180可以接触气体供给单元130(或绝缘板),并且在垂直于接触表面的侧壁中,与气体供给通道115(例如导管120)相反的方向上的侧壁可以接触低介电材料,例如空气。
如图4所示,基板处理设备的分隔件110的至少一部分还可以包括通孔TH2以容纳RF杆140。RF杆140可以经由通孔TH2连接到气体供给单元130,支撑构件145可以布置在分隔件110和RF杆140之间。例如,支撑构件145可以包括绝缘体。在一些实施方式中,支撑构件145可以以凸缘的形式实施。支撑构件145可防止由RF杆140供给的等离子体功率通过分隔件110泄漏。
在图4的实施方式中,支撑构件145的一个侧表面可暴露于空的空间170。在一些实施方式中,支撑构件145的一个侧表面可接触低介电材料。
在一些实施方式中,可以移除支撑构件145暴露的侧表面的至少一部分。因此,RF杆140的一个侧表面可以暴露于空的空间170。换句话说,支撑构件145可以仅布置在分隔件110和RF杆140之间,并且可以不形成在RF杆的下部。因此,类似于图2所示的实施方式,低介电材料可以接触RF杆140的一个侧表面。低介电材料的介电常数可以低于支撑构件145的介电常数,并且因此可以通过以上结构额外提高寄生等离子体的阻挡效应。
在一些实施方式中,如上所述,作为填充空的空间170的低介电材料的空气可以通过路径P2与外部大气连通,并且代替路径P2或者除了路径P2之外,在支撑构件145和分隔件110之间形成的路径P2'可以与外部大气连通。
图5和图6是根据其他实施方式的基板处理设备的示意性截面图。根据本公开的实施方式的基板处理设备可以是根据上述实施方式的基板处理设备的修改示例。在下面的描述中省略了实施方式之间的冗余描述。
如图5所示,根据本公开的实施方式的基板处理设备还可以包括绝缘板190。绝缘板190可以布置在分隔件110和气体供给单元130之间。RF杆140可以通过贯穿基板处理设备的分隔件110的至少一部分和绝缘板190而连接到气体供给单元130。虽然图中未示出,但也可以在RF杆140与分隔件110之间布置支撑构件。
如图6所示,绝缘板190的上表面和一个侧表面可以接触低介电材料。换句话说,绝缘板190的通孔可以被构造成直径大于RF杆140的直径或大于RF杆140与支撑构件的直径的总和。因此,填充基板处理设备的空的空间170的空气(即,低介电材料)不仅可以接触绝缘板190的上表面,还可以接触其侧表面。此外,低介电材料可以接触气体供给电极130的上表面。
图7是根据本公开的实施方式的基板处理设备的示意性横截面图。根据本公开的实施方式的基板处理设备可以是根据上述实施方式的基板处理设备的修改示例。在下面的描述中省略了实施方式之间的冗余描述。
如图7所示,分隔件110的通孔TH1可以在第一区域R1和第二区域R2之间的第三区域R3中具有介于第一直径和第二直径之间的第三直径。低介电材料可以布置在具有第二直径的通孔TH1的侧壁与导管120之间并且在具有第三直径的通孔TH1的侧壁与导管120之间。通过以低介电材料例如外部大气(空气)填充导管120与具有第二直径和第三直径通孔TH1之间的空间,可以防止在空的空间170中产生寄生等离子体。
图8是图7的实施方式的修改示例的示意性截面图,其中,通孔TH1的至少一部分的直径,例如第三区域R3的第三直径,朝向气体供给单元130连续地增加。该形状用于确保形成在基板处理设备中的空气绝缘层的体积尽可能大。因此,如果保证机械稳定性,则第三直径增大的倾斜度可被设计得较大。
图9是图8的实施方式的修改示例的示意性横截面图,其中,基板处理设备的导管120包括凸缘F,并且分隔件110包括台阶部210。台阶部210可以位于形成有通孔TH1的区域中,并且可以从分隔件110突出延伸。台阶部210可以在水平方向或倾斜方向上延伸以支撑导管120的凸缘F。
导管120可以通过凸缘F和台阶部210之间的机械联接而连接到分隔件110。诸如O形环的单独的密封构件可以不插在导管120的凸缘F和台阶部210之间,并因此与外部大气连通的路径P3可以形成在台阶部210和凸缘F之间。空的空间170的空气绝缘层与外部大气之间的空气循环可以通过路径P3实施。因此,尽管根据工艺过程而发生温度变化,但是可以适当地保持空气填充的空间中的压力。
图10是根据本公开的实施方式的基板处理设备的示意性横截面图。根据本公开的实施方式的基板处理设备可以是根据上述实施方式的基板处理设备的修改示例。在下面的描述中省略了实施方式之间的冗余描述。
如图10所示,分隔件110的通孔TH1的至少一部分的侧截面轮廓可以具有钟形形状。钟形形状的轮廓可能是有益的,其益处在于分隔件110的重量可以均匀分布,可以确保基板处理设备的机械稳定性,并且形成在基板处理设备中的空气绝缘层的体积可以确保尽可能大。
间隙G可以形成在台阶部210和导管120的凸缘F之间。间隙G被设置用于增加空气绝缘层的体积,即,使得凸缘F和作为金属材料的分隔件110之间的接触面积最小化。为了形成间隙G,台阶部210的宽度可以是将导管120的凸缘F放置在台阶部210上而不滑动的尺寸,即,足够大的尺寸以提供从导管120的凸缘和分隔件110之间的机械联结。例如,从导管120延伸并突出的凸缘F的长度可以大于从分隔件110延伸并突出的台阶部210的长度。
除了第一突起180之外,分隔件110可以进一步包括第三突起187。第三突起187可以布置在第一突起180和气体供给通道例如导管120之间。第三突起187可以连续地形成在导管120周围或者多个第三突起187可以以一定的间隔不连续地形成。类似于第一突起180,第三突起187可以朝向气体供给单元130突出。此外,低介电材料可以接触第三突起187的至少一个侧表面。例如,当低介电材料是空气时,空气可布置在第一突起部分180与第三突起187之间以及导管120与第三突起187之间。
在一些实施方式中,第三突起187可以连续形成,并且路径P4可以形成为使得第一突起180和第三突起187之间的空气以及导管120和第三突起187之间的空气可以互相连通。尽管在附图中路径P4形成在第三突起187中,但是路径P4可以通过在第三突起187的与绝缘板190接触的表面中形成路径而形成,而不形成单独的通孔。
例如,第三突起187可以不连续地形成。由于不连续地形成的第三突起187的结构,可以在第三突起187之间形成凹槽,并且第一突起180和第三突起187之间的空间以及第三突起187和导管120之间的空间可以通过凹槽连接。此外,第三突起187的一部分例如上部连续地形成,并且第三突起187的另一部分,例如下部可以不连续地形成。
在一些实施方式中,通过不在第三突起187和绝缘板190之间布置诸如O形环的单独构件,路径P4可以形成在第三突起187和绝缘板190之间。换句话说,路径P4可以是第三突起187和绝缘板190之间的表面接触中的空间。
通过在气体供给通道115和第一突起180之间布置第三突起187,可以增强具有空的空间170的分隔件110的机械稳定性。在一些实施方式中,RF杆140可以布置在第一突起180和第三突起187之间,并且机械稳定性可以通过上述布置被额外地增强。换句话说,分隔件110的上部的重量可以由第一突起180、RF杆140和第三突起187机械地分布。
如图10所示,基板处理设备可以包括以下元件:
-包括至少一个通孔TH1的分隔件110;
-通过通孔TH1布置在分隔件110中的(绝缘)导管120;
-连接到(绝缘)导管120的气体供给单元130;
-布置在分隔件110与气体供给单元130之间的绝缘板190;和
-通过贯穿绝缘板190连接到气体供给单元130的RF杆140。
基板处理设备的分隔件110可以包括以下元件:
-与绝缘板190接触的至少一个第一突起180;和
-与绝缘板190接触并且布置在第一突起180和(绝缘)导管120之间的至少一个第三突起187。
此外,RF杆140可以布置在第一突起180和第三突起187之间。此外,空气填充的空间可以形成在分隔件110和绝缘板190之间、在通孔TH1的侧壁和绝缘导管120之间、以及在第一突起180和第三突起187之间。
图11是根据本公开的实施方式的基板处理设备的示意性横截面图。根据本公开的实施方式的基板处理设备可以是根据上述实施方式的基板处理设备的修改示例。在下面的描述中省略了实施方式之间的冗余描述。
如图11所示,根据本公开的实施方式的基板处理设备可以包括布置成接触空气的吸湿件220。随着在处理期间基板处理设备中温度的变化,有可能产生空气中的蒸气成分的凝结现象。接触空气的吸湿件220可以去除蒸汽成分和湿气。因此,空气填充的空间的介电常数可以保持在低的状态。
如图11所示,吸湿件220可以布置在分隔件110上或者可以嵌入分隔件110中。此外,吸湿件220可以布置成接触绝缘板190上或绝缘板190中的空气。
在一些实施方式中,绝缘板190的一个侧表面可以接触低介电材料,并且可以在绝缘板190和导管120之间形成间隙。换句话说,绝缘板190的通孔可以被构造成直径比导管120的直径大。因此,填充基板处理设备的空的空间170的空气不仅可以接触绝缘板190的上表面,还可以接触其侧表面。此外,低介电材料可以接触气体供给电极130的上表面。
图12和图13是根据其他实施方式的基板处理设备的示意性横截面图。根据本公开实施方式的基板处理设备可以是根据上述实施方式的基板处理设备的修改示例。在下面的描述中省略了实施方式之间的冗余描述。
如图12所示,在反应器1中,反应空间18形成为使得反应器壁2与基座25彼此面接触且面密封。基板安装在基座25上,基座25的下部连接到能够上升/下降以装载/卸载基板的装置(未示出)。
反应器壁2的内部空间可以被第一分隔件5分成第一区域3和第二区域4。第一区域3和第二区域4分别对应于反应器1的上部区域和下部区域。第一区域3可以被第二分隔件6分成第三区域8和第四区域13。
此外,第一区域3可以被第三分隔件7分隔成第四区域13和第五区域14。换句话说,由于第三分隔件7布置在反应器壁2和第二分隔件6之间,因此可以形成第四区域13和第五区域14。
第一通孔9可以形成在第三区域8中。第一通孔9贯穿第一分隔件5并且连接作为反应器1的上部空间的第三区域8和作为反应器1的下部空间的第二区域4。在第一通孔9和第三区域8之间形成第一台阶15。
在第二区域4与第一分隔件5之间形成有第六区域17。贯穿第三区域8的第一通孔9的宽度朝向第六区域17逐渐增大。朝向第六区域17的增加的第一通孔9的空间为可以由外部空气填充。外部空气在等离子体处理期间用作绝缘体,并因此可以防止在空间中产生寄生等离子体。此外,第六区域17还可以包括第四分分隔件19,并且第四分分隔件19可以支撑背板20。
气体入口部插入第一通孔9中。气体入口部可以包括第一气体入口6和凸缘27,并且还可以包括贯穿气体入口部内部的第一气体供给通道28。第一气体供给通道28贯穿第一气体入口6和凸缘27并延伸到第二区域4。诸如O形环的密封构件可以插入到第一气体入口6和凸缘27之间的联接表面,从而第一气体供给通道28可以与外部空气隔离。第一气体供给路径29和第二气体供给路径30连接到第一气体入口26以供给用于处理基板的气体。例如,用于原子层沉积工艺的源气体、反应气体、和净化气体经由第一气体供给路径29、第二气体供给路径30和第一气体供给通道28被供给到反应空间18。凸缘27可以由绝缘体形成并且可以防止在等离子体处理期间等离子体功率的泄漏。
反应器1还可以包括贯穿第三分分隔件7的一个表面的第二通孔10。第二通孔10通过依次贯穿第三分隔件7和第一分隔件5而连接到第二区域4。第二通孔10的上部与第二气体入口31连接。诸如O型环等密封构件插入到第二通孔10与第二气体入口31之间的连接面,这样可以防止外部空气的侵入。可以通过第二气体入口31和第二通孔10供给源气体、反应气体、或净化气体。如上所述,可以设置多个第二通孔10。
背板20、气体通道21和气体供给板22可以顺序地布置在第一分隔件5和反应空间18之间。气体供给板22和气体通道21可以通过使用联接构件而联接。气体通道21和第一分隔件5可以通过使用另一个联接构件而联接。
例如,气体通道21和第一分隔件5可以通过背板20联接。作为结果,背板20、气体通道21、和气体供给板22可以顺序地堆叠在从第一分隔件5突出的第四分隔件19上。气体供给板22可以包括用于向反应空间18中的基板(未示出)供给气体的多个孔。例如,包括气体通道21和气体供给板20的气体供给单元可以是喷头,并且在另一个示例中,气体供给单元可以是用于均匀地供给用于蚀刻或抛光物体的材料的装置。
在气体通道21和气体供给板22之间形成气流通道24。通过第一气体供给通道28供给的气体可均匀地供给到气体供给板22。气流通道24的宽度可以从中心部分向其周边部分逐渐减小。
第三通孔23可以形成在背板20和气体通道21的一个表面中。第二台阶16可以形成在背板20、气体通道21、和第三通孔23之间。根据本发明构思,第三通孔23可以贯穿背板20和气体通道21的中心部分,并且气体入口部的凸缘27可以在第一台阶15中插入,并且到达第二台阶16。
诸如O形环的密封构件可以插入凸缘27与第二台阶16之间、第一分隔件5与背板20之间、和/或背板20与气体通道21之间。因此,可以获得与外部空气的隔离。
反应器1还可以包括贯穿背板20的一个表面的第四通孔11以及贯穿气体通道21的一个表面的第五通孔12。第四通孔11和第五通孔12可以连接到第二通孔10。因此,通过第二通孔10供给的气体被供给到气流通道24。
第五通孔12可以在垂直方向上贯穿气体供给板22,或者可以沿倾斜方向贯穿气体通道21,如图12所示。而且,贯穿方向也可以朝向气流通道24的内部或其外部。此外,第五通孔12可以布置在气流通道24的中心和边缘之间,或者布置成与边缘间隔开。或者,第五通孔12的位置可以被确定为对应于具有待处理基板的大比表面积的图案结构的位置。
第四通孔11和/或第五通孔12可以与背板20和气体通道21的中心部分隔开一定距离,并且可以在水平方向上形成多个通孔。或者,第四通孔11和/或第五通孔12可以在竖直方向上形成多个通孔,并同时保持朝向背板20和气体通道21的中心部分一定距离。在第四通孔11和/或第五通孔12中,通孔之间的间隔可根据所需的工艺进行调整。
缓冲空间38可以进一步形成在第二通孔10和第四通孔11之间。缓冲空间38可以保持通过第二通孔10供给的气体,从而被均匀地供给到第四通孔11。在一些实施方式中,缓冲空间38可以形成在第四通孔11与第五通孔12之间。
第一排放部32形成在反应器1的反应器壁2中。第一排放部32可以包括第一排放孔33和第一排放通道34。第一排放部32经由贯穿第一分隔件5的第一排放孔33连接到第五区域14。
第五区域14的上部可联接到排出路径盖36,形成排放路径。诸如O型环等密封构件插入到第五区域14与排出路径盖36之间的联接面,从而将排放路径与外部空气隔离。此外,排放路径盖36的一个表面可以包括气体出口35。气体出口35可以连接到排放泵(未示出)以排放气体。
为了安全起见,反应器1的第四区域13的上部可连接到上盖37。上盖37可以保护RF分配板39不与外部接触。
图13是沿不同方向观察的反应器1的横截面图。如图13所示,除了图12的气体供给通道28之外,可以在反应器1的第一分隔件5中形成通过贯穿第一分隔件5的另一个表面而连接到第二区域4的至少一个第六通孔43。第六通孔43可以布置在第二分隔件6和第三分隔件7之间。
连接构件40可以插入到第六通孔43中,并且因此气体通道21和第一分隔件5可以通过联接构件40彼此机械联接。背板20可以包括在其一个表面中的孔,联接接构件40贯穿该孔。具有气体通道21的背板20可以机械联接到第一分隔件5。联接构件40可以是导电体并且可以是螺丝钉。
支撑构件41被插入在联接构件40周围,并且支撑构件41由绝缘体形成。因此,联接构件40和第一分隔件5可以通过支撑构件41彼此电绝缘,并且因此可以防止在等离子体处理期间等离子体功率的泄漏。
气体通道21和气体供给板22可以由导体形成。因此,气体通道21和气体供给板22可以用作在等离子体处理中传输等离子体功率的电极。
凸缘27、背板20、和支撑构件41可以由绝缘体形成。因此,可以防止等离子体功率经由第一分隔件5通过反应器壁2泄漏。此外,通过用外部空气填充在凸缘27周围的第一通孔9和第六区域17,可防止在空间中产生寄生等离子体。
布置在下部区域(第二区域4)中的气体通道21和气体供给板22可以通过单独的联接构件42彼此联接。联接构件42可以由导体形成并且可以是螺丝钉。在一些实施例中,包括在气体供给单元中的气体通道21和气体供给板22可以一体地形成。
图14是基板处理设备的排放部的放大截面图。如图14所示,排放部分可以包括第一排放部2和第二排放部44.第一排放部32可以包括第一排放孔33和第一排放通道34。第二排放部44可以包括第二排放孔45以及第二排放通道46。第一排放孔33和第二排放孔45可以贯穿第一分隔件5。此外,第一排放孔33和第二排放孔45可以连接排放路径,即第五区域14、排出通道34和排出通道46。
在反应空间18中,在与基板发生化学反应之后留下的残留气体通过第一排放部32和第二排放部44排放。大部分残留气体可以经由排放间隙48流到区域“A”。然后,区域“A”中的残留气体可以通过第一排放部32并且可以排放到作为排放路径的第五区域14。
限定在气体通道和气体供给板旁边的作为盲点的区域“B”的气体可以通过第二排放部44排放到作为排放路径的第五区域14中。第一排放孔33和第二排放孔45的直径可以分别与第一排放通道34和第二排放通道46的直径相同或不同。通过适当地调节第一排放孔33、第二排放孔45、第一排放通道34和/或第二排放通道46的直径比率,可以控制基板边缘部分周围的排放效率,并且可以相应地调整膜的均匀性。而且,通过调节排放间隙48的尺寸,可以控制排放效率和膜的均匀性。
图15至17是根据其它实施方式的反应器和包括反应器的基板处理设备的示意性透视图。根据本公开的实施方式的基板处理设备可以是根据上述实施方式的基板处理设备的修改示例。在下面的描述中省略了实施方式之间的冗余描述。
如图15所示,根据本公开的实施方式的反应器,除了包括第一气体入口26、气体出口35、和排放路径盖36之外,还可以包括保护盖50。保护盖50是用于保护RF输送板52的保护盖。
图16和图17示出移除了保护盖50。如图16和图17所示,RF输送板52连接到RF分配板39。RF分配板39电连接到多个RF杆54。在本公开的实施方式中,为了均匀供给RF功率,RF杆54可以相对于气体通道21的中心例如第一气体入口26的中心对称地布置。
RF输送板52的上部可以连接到RF发生器(未示出)。RF输送板52的下部可以连接到RF分配板39。RF分配板39可以连接到RF杆54。
因此,由RF发生器产生的RF功率经由RF输送板52、RF分配板39、和RF杆54输送到气体通道21。气体通道21机械连接到气体供给板22,并且气体通道21和气体供给板22可以一起用作RF电极。
至少一个RF杆54可以安装在反应器中。RF杆54可以布置成贯穿图12的第一分隔件5的一部分,其中第一分隔件5布置在图12的第二分隔件6与图12的第三分隔件7之间。在另一个实施方式中,如图17所示,可以布置至少两个RF杆54中,并且RF杆54可以相对于反应器的中心对称地布置。对称布置可以使RF功率被均匀地供给到RF电极21和电极22。
在一些实施方式中,筒式加热器(未示出)可以安装在反应器壁2上方以加热反应器壁。多个筒式加热器可以对称地布置,而因此可以实现反应器壁2均匀的温度梯度。
图18和图19示意性地示出了根据其他实施方式的反应器的结构。根据本公开的实施方式的反应器可以是根据上述实施例方式背板20的透视图(图18)和仰视图(图19)。
如图18和图19所示,第二分隔件6可以布置成与反应器壁2的上部空间的中心隔开一定距离。第三分隔件7可以布置在反应器壁2的侧壁和第二分隔件6之间。图12的从上部空间延伸到下部空间的气体供给通道可以通过第二分隔件6的结构来设置。
第四分隔件19可以接触图12的背板20的上表面以支撑背板20。
联接构件40和支撑构件41可以插入到螺纹孔56中。因此,图12的气体通道21和图12的背板20可以机械地连接到图12的第一分隔件5。
RF杆54插入到多个RF杆孔58中并电连接到气体通道21。
在第五区域14中形成排放路径,并且第一排放孔33和第二排放孔45可以分别连接到图14的第一排放通道34和图14的第二排放通道46,形成排放部。
第一通孔9的宽度可朝向图12的第六区域17逐渐增大。第六区域17的空间可以被外部空气填充并且可以在等离子体处理期间用作绝缘体。因此,可以防止在由第一通孔9形成的空间中产生寄生等离子体。
图20和图21示意性地示出了根据其他实施方式的背板20的结构。根据本公开的实施方式的背板可以是根据上述实施方式的背板20的透视图(图20)和仰视图(图21)。
背板20位于图12的第一分隔件5和图12的气体通道21之间。此外,由绝缘体形成的背板20可以用作绝缘体以将图12的第一分隔件5与在等离子体处理期间作为RF电极的气体通道21和气体供给板22隔离开。
第四通孔11可以在背板20的上/下表面中与背板20的中心隔开一定距离地形成多个。第四通孔11可以从图12的第二通孔10接收气体,并将气体供给到图12的第五通孔12,其中第五通孔12贯穿图12的气体通道21。第三通孔23位于背板20的中心部分,并且图12的凸缘27插入第三通孔23中。
图22至24分别是根据本公开的实施方式的包括在气体供给单元中的气体通道21的透视图、俯视图、和仰视图。
气体通道21可以包括多个第五通孔12,其中第五通孔12与气体通道21的中心部分间隔一定距离布置。
如图23所示,气体通道21的上表面中的第五通孔12的位置可以对应于图20和图21中所示的背板20的第四通孔11的位置。
形成在气体通道21中的第五通孔12可以沿垂直方向或倾斜方向贯穿气体通道21。
例如,如图23所示,第五通孔12可以沿气体通道21的第一表面上的具有第一直径d的第一圆周布置或形成。进一步的,如图24所示,第五通孔12可沿气体通道21的第二表面上具有第二直径d'的第二圆周布置或形成。在一个示例中,第一直径d可大于第二直径d'。然而,本发明构思不限于此,并且可以是d=d'或d≠d'。
图25示出贯穿背板20和气体通道21的第四通孔11和第五通孔12的各种实施方式。
如图25所示,贯穿气体通道21的第五通孔12可沿垂直方向或倾斜方向贯穿气体供给板22。当第五通孔12沿倾斜方向贯穿气体供给板22时,第五通孔12可以通向气流通道24的内部或其外部。虽然没有示出,但是第四通孔11不限于垂直延伸的形状。
图26示出了根据另一个实施方式的第二通孔10、第四通孔11、和第五通孔12,第二通孔10、第四通孔11、和第五通孔12贯穿第三分隔件7、第一分隔件5、背板20、和气体通道21。
如图26所示,第二气体入口31、第二通孔10、缓冲空间38、第四通孔11、和第五通孔12中的每一个都被设置为多个并且多种气体经由第二气体入口31被供给到气流通道24。例如,可以通过相应的入口供给源气体、反应气体、和净化气体。
经由第二通孔10、第四通孔11、和第五通孔12供给到气流通道24的气体可以经由气体供给板22下的边缘部分供给到反应空间18的边缘区域,或者供给到反应空间18的中央部分与边缘部分之间的区域。作为结果,可以选择性地控制形成在待处理的基板的边缘区域(边缘部分)中或形成在基板的中央部分和边缘区域之间的特定周边部分中的膜的均匀性或特性。
例如,可以根据通过第二、第四和第五通孔10、11和12供给的气体的流率以及贯穿气体通道21的第五通孔12的倾斜度而被选择性地控制沉积在基板的边缘区域中或在基板的中心部分和边缘部分之间的区域中的膜的均匀性。此外,由于这些因素,可以减小或控制与在基板中心部分沉积的膜的均匀性偏差。
例如,可以沉积在基板的中心部分与边缘部分之间具有最小均匀性偏差的膜。在另一个示例中,可以沉积凹形形状的膜,其中基板的边缘部分比其中心部分厚,或者可以沉积具有凸形形状的膜,其中基板的中心部分比其边缘部分厚。通过第二通孔10、第四通孔11、和第五通孔12供给的气体可以是惰性气体。在一些实施方式中,气体可以是参与形成膜的反应气体和/或源气体。
图27和图28是示出根据本公开的实施方式的在反应器中通过等离子体增强原子层沉积(PEALD)方法沉积在基板上的SiO2膜的厚度的图。曲线图显示了通过第二通孔10、第四通孔11、和第五通孔12供给的气体对膜的均匀性的影响,特别对沉积在基板的边缘部分的膜的均匀性的影响。
曲线的横轴表示当基板的直径为300mm时距离晶片的中心左右150mm的距离。曲线的纵轴表示膜的厚度。在本实施方式中,通过将贯穿气体通道21的第五通孔12的角度设定为30°并改变气体流量来评估影响。
[表1]
如表1所示,通过作为气体供给通道的第一通孔(主孔),供给1000标准毫升/分钟(sccm)的Ar作为源载体,并供给3500sccm的Ar作为净化气体,并且200sccm的O2可作为反应气体连续供给整个处理期间(相应地,总流量为4,700sccm)。供给400瓦的等离子体,在此过程中在反应空间保持2托(torr)的压强。
仅当等离子体被供给并与基板上的源分子反应时才激活氧。因此,当不供给等离子体时,氧气充当净化气体。因此,氧气可以在本过程中用作反应性净化气体。
通过第二通孔供给的气体可以是Ar或O2。气体可以在整个过程中连续供给。可以根据期望的基板周围的膜均匀性适当地控制气体的流量。
根据上述实施方式的发明构思可总结如下。
-通过第一通孔连续供给源气体、净化气体和反应性净化气体的第一操作
-通过第二通孔连续供给净化气体和反应性净化气体中的至少一者的第二操作
-施加等离子体的第三操作
-可以同时执行第一操作和第二操作,而可以在执行第一操作和第二操作的同时临时执行第三操作。
第一通孔对应于图12的气体供给通道28,并且第二通孔对应于图12中贯穿至少一部分气体供给单元的通孔10、11和12。
如图27所示,可以看出,随着通过第二通孔供给的Ar气体的流量增加,沉积在基板的边缘部分处的膜的厚度减小。而且,如图28所示,可以看出,随着通过第二通孔供给的氧气的流量增加,沉积在基板的边缘部分处的膜的厚度增加。换句话说,通过引起和控制供给到反应空间的周边部分的源气体和反应气体对于基板的周边部分的阻塞效应,可以控制基板上的膜的均匀性。
本发明构思的实施方式不能被解释为限于本说明书中描述的部分的特定形式,并且可以包括例如在制造期间产生的形式变化。
应该理解的是,这里描述的实施方式应该仅仅是描述性的而不是出于限制目的。在每个实施方式中的特征或方面的描述应通常被认为可用于其他实施方式中的其他类似特征或方面。
虽然已经参考附图描述了一个或多个实施方式,但是本领域普通技术人员将会理解,可以在其中进行形式和细节上的各种改变,而不背离由以下权利要求书定义的精神和范围。
Claims (19)
1.一种基板处理设备,包括:
包括至少一个通孔的分隔件;
通过所述通孔布置在所述分隔件中的导管;
连接到所述导管的气体供给单元;和
设置在所述通孔的侧壁和所述导管之间的低介电材料,
其中,所述分隔件包括朝向所述气体供给单元突出的第一突起,
其中,所述低介电材料接触所述第一突起的一个侧表面,
其中,所述分隔件的所述第一突起位于所述气体供给单元上方,
其中,所述气体供给单元用作产生等离子体的电极,
其中,所述分隔件还包括在所述第一突起和所述导管之间的第二突起,
其中,所述第二突起对称地形成在所述导管周围,
其中,提供在所述第一突起和所述第二突起之间的第一低介电材料以及在所述导管和所述第二突起之间的第二低介电材料,并且
其中,在所述分隔件下方的所述气体供给单元由所述分隔件的所述第一突起和所述第二突起机械支撑。
2.如权利要求1所述的基板处理设备,其中所述低介电材料包括空气。
3.根据权利要求2所述的基板处理设备,其中,在所述基板处理设备中形成至少一个用于连通所述空气和外部的路径。
4.如权利要求3所述的基板处理设备,其中,在所述分隔件与所述导管之间形成所述路径。
5.如权利要求3所述的基板处理设备,其中,在所述分隔件中形成所述路径。
6.如权利要求1所述的基板处理设备,其中,所述分隔件包括朝向所述气体供给单元突出的突起,并且
所述低介电材料接触所述突起的一个侧表面。
7.如权利要求1所述的基板处理设备,其中,所述分隔件包括位于形成有所述通孔的区域中的台阶部,
所述导管包括凸缘,并且
所述导管通过在所述凸缘和所述台阶部之间的联接而连接到所述分隔件。
8.如权利要求7所述的基板处理设备,其中,在所述台阶部与所述凸缘之间形成有与外部空气连通的路径。
9.如权利要求1所述的基板处理设备,还包括布置在所述分隔件和所述气体供给单元之间的绝缘板。
10.如权利要求9所述的基板处理设备,还包括射频杆,所述射频杆通过贯穿所述分隔件的至少一部分和所述绝缘板而连接到所述气体供给单元。
11.如权利要求1所述的基板处理设备,其中,所述通孔在第一区域中具有第一直径,并且在所述第一区域的下部中具有比所述第一直径大的第二直径。
12.如权利要求11所述的基板处理设备,其中,所述通孔的至少一部分的直径朝向所述气体供给单元连续地增加。
13.如权利要求12所述的基板处理设备,其中,所述通孔的至少一部分的侧截面轮廓具有钟形形状。
14.一种基板处理设备,包括:
包括至少一个通孔的分隔件;
通过所述通孔布置在所述分隔件中的绝缘导管;
连接到所述绝缘导管的气体供给单元;
布置在所述分隔件和所述气体供给单元之间的绝缘板;和
通过贯穿所述绝缘板而连接到所述气体供给单元的射频杆,
其中所述分隔件包括:
与所述绝缘板接触的至少一个第一突起;和
与所述绝缘板接触并布置在所述第一突起和所述绝缘导管之间的至少一个第二突起,
布置在所述第一突起和所述第二突起之间的所述射频杆,以及
在所述分隔件与所述绝缘板之间、在所述通孔的侧壁与所述绝缘导管之间、以及在所述第一突起与所述第二突起之间形成的空气填充的空间。
15.一种基板处理设备,包括:
提供气体供给通道的分隔件;
连接到所述气体供给通道的气体供给单元;和
所述分隔件和所述气体供给单元之间的空气,
其中所述分隔件包括朝向所述气体供给单元突出的至少一个第一突起,并且
所述空气接触所述第一突起的一个侧表面,
其中,所述分隔件还包括至少一个第二突起,所述第二突起朝向所述气体供给单元突出并且布置在所述第一突起和所述气体供给通道之间,并且
在所述第一突起和所述第二突起之间以及所述气体供给通道和所述第二突起之间设置所述空气,
其中,所述基板处理设备还包括射频杆,所述射频杆连接到所述气体供给单元并且布置在所述第一突起与所述第二突起之间。
16.如权利要求15所述的基板处理设备,其中,在与所述气体供给单元重叠的区域中布置所述第一突起。
17.如权利要求15所述的基板处理设备,其中,所述第一突起的至少一部分布置在不与所述气体供给单元重叠的区域中。
18.如权利要求15所述的基板处理设备,其中,所述空气防止在所述分隔件和所述气体供给单元之间生成寄生等离子体。
19.如权利要求17所述的基板处理设备,还包括布置成接触所述空气的吸湿件。
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US20180166258A1 (en) | 2018-06-14 |
US11222772B2 (en) | 2022-01-11 |
TW201833373A (zh) | 2018-09-16 |
CN108231624A (zh) | 2018-06-29 |
KR20180068582A (ko) | 2018-06-22 |
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