TWI655312B - 基板處理設備 - Google Patents
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Abstract
本發明揭露一種基板處理設備,包括:具有至少一個通孔的分隔件;通過所述通孔布置在所述分隔件中的導管;與所述導管連接的氣體供給單元;以及設置在所述通孔的側壁和所述導管之間的低介電材料。
Description
本申請主張在2016年12月14日在韓國知識產權局提交的韓國專利申請第10-2016-0170410號申請的優先權,其公開內容經由引用整體併入本文。
一個或多個實施方式關於一種基板處理設備,並且更具體地,關於能夠防止寄生電漿生成的基板沉積設備。
在製造半導體器件的過程中,隨著電線寬度的減小,要求更精確的製程控制。在作為重要的半導體製程之一的薄膜沉積製程中,已經為實現高的薄膜均勻性的做出了許多努力。
均勻膜沉積的主要因素之一是氣體供給單元。普通氣體供給裝置採用噴頭方法。噴頭方法具有以同軸形式將氣體均勻地供給到基板上的優點。
電漿被用於確保相對較快的反應速度。需要在反應空間中均勻地生成電漿。當在不需要的空間中產生電漿時,可能會在設備中出現缺陷。而且,當電漿不均勻地分布在基板上時,膜的質量可能下降。
一個或多個實施方式包括可防止寄生電漿生成的基板沉積設備。
一個或多個實施方式包括可防止電漿功率洩漏的基板處理設備。
其他的方面將在下述內容中被部分地闡述,並且將部分地從描述中變得顯而易見,或者可以通過實踐本申請實施方式而被瞭解。
根據一個或多個實施方式,一種基板處理設備包括:分隔件,其包括至少一個通孔;通過通孔布置在分隔件中的導管;連接到導管的氣體供給單元;以及在通孔的側壁和導管之間的低介電材料。
低介電材料可以包括空氣。
可以在基板處理設備中形成至少一個用於連接空氣和外部的路徑。
可以在分隔件和導管之間形成路徑。
可以在分隔件中形成路徑。
分隔件可以包括朝向氣體供給單元突出的突起,並且低介電材料可以接觸突起的一個側表面。
分隔件可以包括位於形成通孔的區域中的臺階部,導管可以包括凸緣,並且導管可以通過凸緣和臺階部之間的聯接而連接到分隔件。
可以在臺階部和凸緣之間形成與外部空氣連通的路徑。
基板處理設備還可以包括布置在分隔件和氣體供給單 元之間的絕緣板。
基板處理設備還可以包括射頻(RF)桿,所述射頻桿通過貫穿分隔件的至少一部分和絕緣板而連接到氣體供給單元。
通孔可以在第一區域中具有第一直徑,並且在第一區域的下部中具有比第一直徑大的第二直徑。
通孔的至少一部分的直徑可朝向氣體供給單元連續地增加。
通孔的至少一部分的側截面輪廓可以具有鐘形的形狀。
根據一個或多個實施例,一種基板處理設備包括:分隔件,其包括至少一個通孔;絕緣導管,其通過通孔布置在分隔件中;氣體供給單元,其連接到絕緣導管;布置在分隔件和氣體供給單元之間的絕緣板;以及通過貫穿絕緣板而連接到氣體供給單元的射頻(RF)桿,其中,分隔件包括與絕緣板接觸的至少一個第一突起部分,和與絕緣板接觸並布置在第一突起部分和絕緣導管之間的至少一個第二突起部分,RF桿布置在第一突起部分和第二突起部分之間,並且空氣填充的空間形成於分隔件與絕緣板之間、通孔的側壁和絕緣導管之間、以及第一突起部分和第二突起部分之間。
第二突起部分可以連續地形成在絕緣導管周圍。第二突起部分可以進一步包括路徑。路徑可以形成為連接第一分隔件與第二分隔件之間的空間和第二分隔件與絕緣導管 之間的空間。或者,第二突起部分可以不連續地形成在絕緣導管周圍。
根據一個或多個實施方式,一種基板處理設備包括:提供氣體供給通道的分隔件,連接到氣體供給通道的氣體供給單元,以及分隔件和氣體供給單元之間的空氣,其中,分隔件包括在至少一個朝向氣體供給單元突出的第一突起部分,並且空氣接觸第一突起部分的一個側表面。
第一突起部分可以布置在與氣體供給單元重疊的區域中。
第一突起部分的至少一部分可以布置在不與氣體供給單元重疊的區域中。
分隔件還可以包括朝向氣體供給單元突出並布置在第一突起部分和氣體供給通道之間的至少一個第二突起部分,並且可以在第一突起部分和第二突起部分之間、以及在氣體供給通道和第二突起部分之間設置空氣。
基板處理設備還可以包括射頻(RF)桿,其連接到氣體供給單元並且布置在第一突起部分和第二突起部分之間。
基板處理設備可以進一步包括被布置成接觸空氣的吸濕件。
第二突起部分可以連續地形成在氣體供給通道周圍。例如,第二突起部分還可以包括路徑。路徑可以形成為連接第一分隔件和第二分隔件之間的空間與第二分隔件和氣體供給通道之間的空間。或者,第二突起部分可以不連續地形成在氣體供給通道周圍。
1‧‧‧反應器
2‧‧‧反應器壁
3‧‧‧第一區域
4‧‧‧第二區域
5‧‧‧第一分隔件
6‧‧‧第二分隔件
7‧‧‧第三分隔件
8‧‧‧第三區域
9‧‧‧第一通孔
10‧‧‧第二通孔
11‧‧‧第四通孔
12‧‧‧第五通孔
13‧‧‧第四區域
14‧‧‧第五區域
15‧‧‧第一臺階
16‧‧‧第二臺階
17‧‧‧第六區域
18‧‧‧反應空間
19‧‧‧第四分隔件
20‧‧‧背板
21‧‧‧氣體通道
22‧‧‧氣體供給板
23‧‧‧第三通孔
24‧‧‧氣流通道
25‧‧‧基座
26‧‧‧第一氣體入口
27‧‧‧凸緣
28‧‧‧第一氣體供給通道
29‧‧‧第一氣體供給路徑
30‧‧‧第二氣體供給路徑
31‧‧‧第二氣體入口
32‧‧‧第一排放部
33‧‧‧第一排放孔
34‧‧‧第一排放通道
35‧‧‧氣體出口
36‧‧‧排放路徑蓋
37‧‧‧上蓋
38‧‧‧緩衝空間
39‧‧‧RF分配板
40、42‧‧‧聯接構件
41‧‧‧支撐構件
43‧‧‧第六通孔
44‧‧‧第二排放部
45‧‧‧第二排放孔
46‧‧‧第二排放通道
48‧‧‧排放間隙
50‧‧‧保護蓋
52‧‧‧RF輸送板
54‧‧‧RF桿
56‧‧‧螺紋孔
58‧‧‧RF桿孔
110‧‧‧分隔件
115‧‧‧氣體供給通道
120‧‧‧導管
130‧‧‧氣體供給單元
140‧‧‧射頻(RF)桿
145‧‧‧支撐構件
150‧‧‧基板支撐單元
160‧‧‧反應空間
170‧‧‧空間
180、185、187‧‧‧突起
190‧‧‧絕緣板
210‧‧‧臺階部
220‧‧‧吸濕件
A、B、C‧‧‧區域
d‧‧‧第一直徑
d’‧‧‧第二直徑
F‧‧‧凸緣
G‧‧‧間隙
R1‧‧‧第一區域
R2‧‧‧第二區域
R3‧‧‧第三區域
P1、P2、P2’、P3、P4‧‧‧路徑
TH1、TH2‧‧‧通孔
S‧‧‧目標對象
結合圖式,從下文對實施方式的描述中,這些及/或其它方面將變得清楚並且更容易理解。
圖1和圖2是根據實施方式的基板處理設備的示意性截面圖。
圖3和圖4是根據其他實施方式的基板處理設備的示意性截面圖。
圖5和圖6是根據其他實施方式的基板處理設備的示意性截面圖。
圖7是根據本公開的實施方式的基板處理設備的示意性截面圖。
圖8和圖9是根據圖7的實施方式的修改示例的示意性截面圖。
圖10是根據本公開的實施方式的基板處理設備的示意性截面圖。
圖11是根據本公開的實施方式的基板處理設備的示意性截面圖。
圖12和圖13是根據其他實施方式的基板處理設備的示意性截面圖。
圖14是基板處理設備的排放部分的放大截面圖。
圖15至圖17是根據其他實施方式的反應器和包括反應器的基板處理設備的示意性透視圖。
圖18和圖19示意性地示出了根據其他實施方式的反應器的結構。
圖20和圖21示意性地示出了根據其他實施方式的背板的結構。
圖22至圖24分別是根據本公開的實施方式的包括在氣體供給單元中的氣體通道的透視圖、俯視圖、和仰視圖。
圖25和圖26示出貫穿背板和氣體通道的第四通孔和第五通孔的各種實施方式。
圖27和圖28是示出根據本揭露的實施方式的在反應器中通過電漿增強原子層沉積(PEALD)方法沉積在基板上的SiO2膜的厚度的圖。
現在將詳細參考實施方式,其示例在圖式中示出,其中相同的元件符號始終表示相同的元件。就這一點而言,本揭露的實施方式可以具有不同的形式,而不應該被解釋為限制於本文的描述。因此,下面僅通過參考圖式來描述實施方式,以解釋本說明書的各個方面。如本文所使用的,術語“及/或”包括關於一個或多個相關所列項目的任何和所有組合。諸如“至少一個”這樣的表達當其在元素列表之前時,修飾整個元素列表並且不修改列表的單個元素。
提供實施方式以向本領域的普通技術人員進一步完整地解釋本發明構思。然而,本發明構思不限於此,並且可以理解的是,在不脫離所附權利要求的精神和範圍的情況下,可以在形式和細節上進行各種改變。也就是說,可以為了解釋本發明構思的實施方式而僅對特定結構或功能進行描述。
本說明書中使用的術語用於解釋具體實施方式,而不是用於限制本發明構思。因此,除非在上下文中另外明確指定,否則本說明書中的單數的表達包括複數的表示。而且,諸如“包含”及/或“包括”的術語可以被解釋為表示某個特徵、數量、步驟、操作、組成元素、或其組合,但是不能被解釋為排除一個或多個其他特徵、數字、步驟、操作、組成元素、或其組合的存在或可能性。如在本說明書中所使用的,術語“及/或”包括所列項目的任意一個或至少一種項目組合的全部。
在本說明書中,諸如“第一”和“第二”的術語在本文中僅用於描述各種構件、部件、區域、層及/或部分,但是組成元件不受這些術語限制。顯而易見的是,構件、部件、區域、層及/或部分不受術語限制。這些術語僅用於區分一個構成要素和另一個構成要素的目的。因此,在不偏離本發明構思的正確範圍的情況下,第一構件、部件、區域、層、或部分可以指代第二構件、部件、區域、層、或部分。
在下文中,參考圖式詳細描述本發明構思的實施方式。在圖式中,所示形狀可以根據例如製造技術及/或公差來修改。因此,本發明構思的實施方式不能被解釋為限於本說明書中描述的部分的特定形狀,並且可以包括例如在製造期間產生的形狀的變化。
圖1和圖2是根據本公開實施方式的基板處理設備的示意性截面圖。
如圖1和圖2所示,每個基板處理設備可以包括分隔件110、導管120、氣體供給單元130、射頻(RF)桿140、和基板支撐單元150。儘管在本說明書所描述的基板處理設備的示例可以包括用於半導體或顯示基板的沉積設備,但是本揭露不限於此。基板處理設備可以是進行用於膜形成的材料沉積所需的任何設備,或者可以指用於均勻地供給用於材料的蝕刻或拋光的源材料的設備。在以下的描述中,為了便於解釋,我們假設基板處理設備是半導體薄膜沉積設備。
分隔件110可以是反應器的構成元件。換句話說,用於處理例如基板的沉積、蝕刻、或拋光的反應空間160可以通過分隔件的結構形成。例如,分隔件110可以包括至少一個通孔TH1。氣體供給通道可以通過分隔件110的通孔TH1設置。
導管120可以通過通孔TH1布置在分隔件110中。導管120可以是基板處理設備的氣體供給通道。當沉積設備是原子層沉積設備時,可以通過導管120供給源氣體、淨化氣體及/或反應氣體。導管120可以包括絕緣材料。在一些實施方式中,導管120可以是由絕緣材料形成的絕緣導管。
氣體供給單元130可以連接到作為氣體供給通道的導管120。氣體供給單元130可以被固定到反應器。例如,氣體供給單元130可以通過固定構件(未圖示)固定到分隔件110。氣體供給單元130可以被配置為在反應空間160 中朝向目標對象S供給氣體。例如,氣體供給單元130可以是被配置為均勻地供給氣體的噴頭組件。
RF桿140可以通過貫穿分隔件110的至少一部分而連接到氣體供給單元130。RF桿140可以連接到外部電漿供給單元(未圖示)。雖然圖2示出了兩個RF桿140,但是本揭露不限於此,並且可以安裝多於兩個的RF桿以改善供給到反應空間160的電漿功率的均勻性。此外,儘管在圖式中未示出,為了切斷RF桿140和分隔件110之間的電連接,可以在RF桿140和分隔件110之間設置絕緣體。
氣體供給單元130可以是導電體並且可以用作產生電漿的電極。換句話說,當氣體供給單元130連接到RF桿140時,氣體供給單元130可以用作產生電漿的電極。採用上述使用氣體供給單元130作為電極的方法的氣體供給單元130在下面的描述中可以被稱為氣體供給電極。
基板支撐單元150可以被配置為提供其中容納諸如半導體或顯示基板的目標對象S的區域。此外,基板支撐單元150可以被構造成接觸分隔件110的下表面。例如,基板支撐單元150可以由能夠執行垂直和旋轉運動的支撐部分(未圖示)支撐。當基板支撐單元150通過支撐部分的運動與分隔件110分離或與分隔件110接觸時,反應空間160可被打開或關閉。此外,基板支撐單元150可以是導電體,並且可以用作產生電漿的電極,亦即,氣體供給電極的對電極。
可以在導管120和分隔件110的通孔TH1的側壁之間 形成空的空間170。空的空間170可以由低介電材料填充。在一個示例中,低介電材料可以包括空氣。此外,除了空氣之外,低介電材料可以包括選自以下中的任意一者及其組合:氫倍半矽氧烷(HSQ)、甲基倍半矽氧烷(MSQ)、無定形氟碳(aC:F)、氟氧化矽(SiOF),碳氧化矽(SiOC)和多孔二氧化矽(SiO2)。
空的空間170或低介電材料(例如空氣)可防止產生寄生電漿。例如,當對氣體供給電極(氣體供給單元130)施加電壓以產生電漿時,可以在氣體供給電極(氣體供給單元130)與基座電極(基板支撐單元150)之間的空間以外的空間中產生寄生電漿。寄生電漿可以在例如分隔件110和氣體供給電極(氣體供給單元130)之間的空間中產生,或在分隔件110和導管120之間的空間中產生。空的空間170或以低介電材料(例如空氣)填充的空間170可防止產生寄生電漿。
因此,根據本發明構思的實施方式,可解決由寄生電漿產生的污染顆粒、腔室內部的污染、以及根據污染顆粒的處理結果質量的惡化。
分隔件110可以包括朝向氣體供給單元130突出的突起180。突起180的至少一部分可以布置在與氣體供給單元130重疊的區域或不與氣體供給單元130重疊的區域。在一些實施方式中,突起180的至少一部分可以布置在不與其中容納有目標對象S的基板支撐單元150的區域C重疊的區域中。在一些實施方式中,突起180可以不完全重 疊其中容納有目標對象S的基板支撐單元150的區域C。
突起180的一個側表面可以接觸低介電材料。更詳細地,突起180可以接觸氣體供給單元130(或絕緣板)。在垂直於接觸表面的側壁中,面對氣體供給通道(例如導管120)的側壁可以接觸低介電材料,例如空氣。
為了實現突起180的側壁,分隔件110的通孔TH1可以在第一區域中具有第一直徑,並且在第一區域下方的第二區域中可以具有比第一直徑大的第二直徑。換句話說,布置在第一區域中的通孔TH1的第一部分可以具有提供氣體供給通道或容納導管120的第一直徑,而布置在第二區域中的通孔TH1的第二部分可具有大於第一直徑的第二直徑以提供突起180。
當低介電材料是空氣時,可以在基板處理設備中形成至少一個連接空氣和外部的路徑。路徑可以是在分隔件110和導管120之間形成的路徑P1。此外,路徑可以是在RF桿140和分隔件110之間形成的路徑P2,或者形成在分隔件110中的路徑(未圖示)。
圖3和圖4是根據其他實施方式的基板處理設備的示意性截面圖。根據本揭露的實施方式的基板處理設備可以是根據上述實施方式的基板處理設備的修改示例。在下面的描述中省略了實施方式之間的冗餘描述。
參照圖3和圖4,根據本實施方式的基板處理設備可以包括分隔件110、氣體供給單元130、RF桿140和基板支撐單元150。在本揭露的實施方式中,基板處理設備的 分隔件110可構造成提供氣體供給通道115。在一些實施方式中,可在氣體供給通道115中設置導管。
除了上述的突起180之外,基板處理設備的分隔件110還可以包括突起185。像突起180一樣,突起185可以朝向氣體供給單元130突出。此外,可以填充空的空間的低介電材料可以接觸突起180的一個側表面和突起185的一個側表面。
在下面的描述中,為了區分突起180和突起185,突起180可被稱為第一突起,突起185可被稱為第二突起。然而,上述指示僅僅是為了便於解釋,並且申請專利範圍中限定的第一突起可以指突起180或突起185。
與第一突起180相反,第二突起185整個布置在與氣體供給單元130重疊的區域中。此外,第二突起185整個布置在與容納有目標對象S的基板支撐單元150的區域C重疊的區域中。在一些實施方式中,突起180可以接觸氣體供給單元130(或絕緣板),並且在垂直於接觸表面的側壁中,與氣體供給通道115(例如導管120)相反的方向上的側壁可以接觸低介電材料,例如空氣。
如圖4所示,基板處理設備的分隔件110的至少一部分還可以包括通孔TH2以容納RF桿140。RF桿140可以經由通孔TH2連接到氣體供給單元130,支撐構件145可以布置在分隔件110和RF桿140之間。例如,支撐構件145可以包括絕緣體。在一些實施方式中,支撐構件145可以以凸緣的形式實施。支撐構件145可防止由RF桿140 供給的電漿功率通過分隔件110洩漏。
在圖4的實施方式中,支撐構件145的一個側表面可暴露於空的空間170。在一些實施方式中,支撐構件145的一個側表面可接觸低介電材料。
在一些實施方式中,可以移除支撐構件145暴露的側表面的至少一部分。因此,RF桿140的一個側表面可以暴露於空的空間170。換句話說,支撐構件145可以僅布置在分隔件110和RF桿140之間,並且可以不形成在RF桿的下部。因此,類似於圖2所示的實施方式,低介電材料可以接觸RF桿140的一個側表面。低介電材料的介電常數可以低於支撐構件145的介電常數,並且因此可以通過以上結構額外提高寄生電漿的阻擋效應。
在一些實施方式中,如上所述,作為填充空的空間170的低介電材料的空氣可以通過路徑P2與外部大氣連通,並且代替路徑P2或者除了路徑P2之外,在支撐構件145和分隔件110之間形成的路徑P2'可以與外部大氣連通。
圖5和圖6是根據其他實施方式的基板處理設備的示意性截面圖。根據本揭露的實施方式的基板處理設備可以是根據上述實施方式的基板處理設備的修改示例。在下面的描述中省略了實施方式之間的冗餘描述。
如圖5所示,根據本揭露的實施方式的基板處理設備還可以包括絕緣板190。絕緣板190可以布置在分隔件110和氣體供給單元130之間。RF桿140可以通過貫穿基板處理設備的分隔件110的至少一部分和絕緣板190而連接到 氣體供給單元130。雖然圖中未示出,但也可以在RF桿140與分隔件110之間布置支撐構件。
如圖6所示,絕緣板190的上表面和一個側表面可以接觸低介電材料。換句話說,絕緣板190的通孔可以被構造成直徑大於RF桿140的直徑或大於RF桿140與支撐構件的直徑的總和。因此,填充基板處理設備的空的空間170的空氣(亦即,低介電材料)不僅可以接觸絕緣板190的上表面,還可以接觸其側表面。此外,低介電材料可以接觸氣體供給單元130的上表面。
圖7是根據本揭露的實施方式的基板處理設備的示意性橫截面圖。根據本揭露的實施方式的基板處理設備可以是根據上述實施方式的基板處理設備的修改示例。在下面的描述中省略了實施方式之間的冗餘描述。
如圖7所示,分隔件110的通孔TH1可以在第一區域R1和第二區域R2之間的第三區域R3中具有介於第一直徑和第二直徑之間的第三直徑。低介電材料可以布置在具有第二直徑的通孔TH1的側壁與導管120之間並且在具有第三直徑的通孔TH1的側壁與導管120之間。通過以低介電材料例如外部大氣(空氣)填充導管120與具有第二直徑和第三直徑通孔TH1之間的空間,可以防止在空的空間170中產生寄生電漿。
圖8是圖7的實施方式的修改示例的示意性截面圖,其中,通孔TH1的至少一部分的直徑,例如第三區域R3的第三直徑,朝向氣體供給單元130連續地增加。該形狀 用於確保形成在基板處理設備中的空氣絕緣層的體積盡可能大。因此,如果保證機械穩定性,則第三直徑增大的傾斜度可被設計得較大。
圖9是圖8的實施方式的修改示例的示意性橫截面圖,其中,基板處理設備的導管120包括凸緣F,並且分隔件110包括臺階部210。臺階部210可以位於形成有通孔TH1的區域中,並且可以從分隔件110突出延伸。臺階部210可以在水平方向或傾斜方向上延伸以支撐導管120的凸緣F。
導管120可以通過凸緣F和臺階部210之間的機械聯接而連接到分隔件110。諸如O形環的單獨的密封構件可以不插在導管120的凸緣F和臺階部210之間,並因此與外部大氣連通的路徑P3可以形成在臺階部210和凸緣F之間。空的空間170的空氣絕緣層與外部大氣之間的空氣循環可以通過路徑P3實施。因此,儘管根據製程過程而發生溫度變化,但是可以適當地保持空氣填充的空間中的壓力。
圖10是根據本揭露的實施方式的基板處理設備的示意性橫截面圖。根據本揭露的實施方式的基板處理設備可以是根據上述實施方式的基板處理設備的修改示例。在下面的描述中省略了實施方式之間的冗餘描述。
如圖10所示,分隔件110的通孔TH1的至少一部分的側截面輪廓可以具有鐘形形狀。鐘形形狀的輪廓可能是有益的,其益處在於分隔件110的重量可以均勻分佈,可 以確保基板處理設備的機械穩定性,並且形成在基板處理設備中的空氣絕緣層的體積可以確保盡可能大。
間隙G可以形成在臺階部210和導管120的凸緣F之間。間隙G被設置用於增加空氣絕緣層的體積,亦即,使得凸緣F和作為金屬材料的分隔件110之間的接觸面積最小化。為了形成間隙G,臺階部210的寬度可以是將導管120的凸緣F放置在臺階部210上而不滑動的尺寸,亦即,足夠大的尺寸以提供從導管120的凸緣和分隔件110之間的機械聯結。例如,從導管120延伸並突出的凸緣F的長度可以大於從分隔件110延伸並突出的臺階部210的長度。
除了第一突起180之外,分隔件110可以進一步包括第三突起187。第三突起187可以布置在第一突起180和氣體供給通道例如導管120之間。第三突起187可以連續地形成在導管120周圍或者多個第三突起187可以以一定的間隔不連續地形成。類似於第一突起180,第三突起187可以朝向氣體供給單元130突出。此外,低介電材料可以接觸第三突起187的至少一個側表面。例如,當低介電材料是空氣時,空氣可布置在第一突起180部分與第三突起187之間以及導管120與第三突起187之間。
在一些實施方式中,第三突起187可以連續形成,並且路徑P4可以形成為使得第一突起180和第三突起187之間的空氣以及導管120和第三突起187之間的空氣可以互相連通。儘管在圖式中路徑P4形成在第三突起187中,但是路徑P4可以通過在第三突起187的與絕緣板190接 觸的表面中形成路徑而形成,而不形成單獨的通孔。
例如,第三突起187可以不連續地形成。由於不連續地形成的第三突起187的結構,可以在第三突起187之間形成凹槽,並且第一突起180和第三突起187之間的空間以及第三突起187和導管120之間的空間可以通過凹槽連接。此外,第三突起187的一部分例如上部連續地形成,並且第三突起187的另一部分,例如下部可以不連續地形成。
在一些實施方式中,通過不在第三突起187和絕緣板190之間布置諸如O形環的單獨構件,路徑P4可以形成在第三突起187和絕緣板190之間。換句話說,路徑P4可以是第三突起187和絕緣板190之間的表面接觸中的空間。
通過在氣體供給通道115和第一突起180之間布置第三突起187,可以增強具有空的空間170的分隔件110的機械穩定性。在一些實施方式中,RF桿140可以布置在第一突起180和第三突起187之間,並且機械穩定性可以通過上述布置被額外地增強。換句話說,分隔件110的上部的重量可以由第一突起180、RF桿140和第三突起187機械地分佈。
如圖10所示,基板處理設備可以包括以下元件:-包括至少一個通孔TH1的分隔件110;-通過通孔TH1布置在分隔件110中的(絕緣)導管120;-連接到(絕緣)導管120的氣體供給單元130; -布置在分隔件110與氣體供給單元130之間的絕緣板190;和-通過貫穿絕緣板190連接到氣體供給單元130的RF桿140。
基板處理設備的分隔件110可以包括以下元件:-與絕緣板190接觸的至少一個第一突起180;和-與絕緣板190接觸並且布置在第一突起180和(絕緣)導管120之間的至少一個第三突起187。
此外,RF桿140可以布置在第一突起180和第三突起187之間。此外,空氣填充的空間可以形成在分隔件110和絕緣板190之間、在通孔TH1的側壁和絕緣導管120之間、以及在第一突起180和第三突起187之間。
圖11是根據本揭露的實施方式的基板處理設備的示意性橫截面圖。根據本揭露的實施方式的基板處理設備可以是根據上述實施方式的基板處理設備的修改示例。在下面的描述中省略了實施方式之間的冗餘描述。
如圖11所示,根據本揭露的實施方式的基板處理設備可以包括布置成接觸空氣的吸濕件220。隨著在處理期間基板處理設備中溫度的變化,有可能產生空氣中的蒸氣成分的凝結現象。接觸空氣的吸濕件220可以去除蒸汽成分和濕氣。因此,空氣填充的空間的介電常數可以保持在低的狀態。
如圖11所示,吸濕件220可以布置在分隔件110上或者可以嵌入分隔件110中。此外,吸濕件220可以布置成 接觸絕緣板190上或絕緣板190中的空氣。
在一些實施方式中,絕緣板190的一個側表面可以接觸低介電材料,並且可以在絕緣板190和導管120之間形成間隙。換句話說,絕緣板190的通孔可以被構造成直徑比導管120的直徑大。因此,填充基板處理設備的空的空間170的空氣不僅可以接觸絕緣板190的上表面,還可以接觸其側表面。此外,低介電材料可以接觸氣體供給單元130的上表面。
圖12和圖13是根據其他實施方式的基板處理設備的示意性橫截面圖。根據本揭露實施方式的基板處理設備可以是根據上述實施方式的基板處理設備的修改示例。在下面的描述中省略了實施方式之間的冗餘描述。
如圖12所示,在反應器1中,反應空間18形成為使得反應器壁2與基座25彼此面接觸且面密封。基板安裝在基座25上,基座25的下部連接到能夠上升/下降以裝載/卸載基板的裝置(未圖示)。
反應器壁2的內部空間可以被第一分隔件5分成第一區域3和第二區域4。第一區域3和第二區域4分別對應於反應器1的上部區域和下部區域。第一區域3可以被第二分隔件6分成第三區域8和第四區域13。
此外,第一區域3可以被第三分隔件7分隔成第四區域13和第五區域14。換句話說,由於第三分隔件7布置在反應器壁2和第二分隔件6之間,因此可以形成第四區域13和第五區域14。
第一通孔9可以形成在第三區域8中。第一通孔9貫穿第一分隔件5並且連接作為反應器1的上部空間的第三區域8和作為反應器1的下部空間的第二區域4。在第一通孔9和第三區域8之間形成第一臺階15。
在第二區域4與第一分隔件5之間形成有第六區域17。貫穿第三區域8的第一通孔9的寬度朝向第六區域17逐漸增大。朝向第六區域17的增加的第一通孔9的空間為可以由外部空氣填充。外部空氣在電漿處理期間用作絕緣體,並因此可以防止在空間中產生寄生電漿。此外,第六區域17還可以包括第四分隔件19,並且第四分隔件19可以支撐背板20。
氣體入口部插入第一通孔9中。氣體入口部可以包括第一氣體入口26和凸緣27,並且還可以包括貫穿氣體入口部內部的第一氣體供給通道28。第一氣體供給通道28貫穿第一氣體入口26和凸緣27並延伸到第二區域4。諸如O形環的密封構件可以插入到第一氣體入口26和凸緣27之間的聯接表面,從而第一氣體供給通道28可以與外部空氣隔離。第一氣體供給路徑29和第二氣體供給路徑30連接到第一氣體入口26以供給用於處理基板的氣體。例如,用於原子層沉積製程的源氣體、反應氣體、和淨化氣體經由第一氣體供給路徑29、第二氣體供給路徑30和第一氣體供給通道28被供給到反應空間18。凸緣27可以由絕緣體形成並且可以防止在電漿處理期間電漿功率的洩漏。
反應器1還可以包括貫穿第三分隔件7的一個表面的第二通孔10。第二通孔10通過依次貫穿第三分隔件7和第一分隔件5而連接到第二區域4。第二通孔10的上部與第二氣體入口31連接。諸如O型環等密封構件插入到第二通孔10與第二氣體入口31之間的連接面,這樣可以防止外部空氣的侵入。可以通過第二氣體入口31和第二通孔10供給源氣體、反應氣體、或淨化氣體。如上所述,可以設置多個第二通孔10。
背板20、氣體通道21和氣體供給板22可以順序地布置在第一分隔件5和反應空間18之間。氣體供給板22和氣體通道21可以通過使用聯接構件而聯接。氣體通道21和第一分隔件5可以通過使用另一個聯接構件而聯接。
例如,氣體通道21和第一分隔件5可以通過背板20聯接。作為結果,背板20、氣體通道21、和氣體供給板22可以順序地堆疊在從第一分隔件5突出的第四分隔件19上。氣體供給板22可以包括用於向反應空間18中的基板(未圖示)供給氣體的多個孔。例如,包括氣體通道21和氣體供給板22的氣體供給單元可以是噴頭,並且在另一個示例中,氣體供給單元可以是用於均勻地供給用於蝕刻或拋光物體的材料的裝置。
在氣體通道21和氣體供給板22之間形成氣流通道24。通過第一氣體供給通道28供給的氣體可均勻地供給到氣體供給板22。氣流通道24的寬度可以從中心部分向其周邊部分逐漸減小。
第三通孔23可以形成在背板20和氣體通道21的一個表面中。第二臺階16可以形成在背板20、氣體通道21、和第三通孔23之間。根據本發明構思,第三通孔23可以貫穿背板20和氣體通道21的中心部分,並且氣體入口部的凸緣27可以在第一臺階15中插入,並且到達第二臺階16。
諸如O形環的密封構件可以插入凸緣27與第二臺階16之間、第一分隔件5與背板20之間、及/或背板20與氣體通道21之間。因此,可以獲得與外部空氣的隔離。
反應器1還可以包括貫穿背板20的一個表面的第四通孔11以及貫穿氣體通道21的一個表面的第五通孔12。第四通孔11和第五通孔12可以連接到第二通孔10。因此,通過第二通孔10供給的氣體被供給到氣流通道24。
第五通孔12可以在垂直方向上貫穿氣體供給板22,或者可以沿傾斜方向貫穿氣體通道21,如圖12所示。而且,貫穿方向也可以朝向氣流通道24的內部或其外部。此外,第五通孔12可以布置在氣流通道24的中心和邊緣之間,或者布置成與邊緣間隔開。或者,第五通孔12的位置可以被確定為對應於具有待處理基板的大比表面積的圖案結構的位置。
第四通孔11及/或第五通孔12可以與背板20和氣體通道21的中心部分隔開一定距離,並且可以在水平方向上形成多個通孔。或者,第四通孔11及/或第五通孔12可以在豎直方向上形成多個通孔,並同時保持朝向背板20和氣 體通道21的中心部分一定距離。在第四通孔11及/或第五通孔12中,通孔之間的間隔可根據所需的製程進行調整。
緩衝空間38可以進一步形成在第二通孔10和第四通孔11之間。緩衝空間38可以保持通過第二通孔10供給的氣體,從而被均勻地供給到第四通孔11。在一些實施方式中,緩衝空間38可以形成在第四通孔11與第五通孔12之間。
第一排放部32形成在反應器1的反應器壁2中。第一排放部32可以包括第一排放孔33和第一排放通道34。第一排放部32經由貫穿第一分隔件5的第一排放孔33連接到第五區域14。
第五區域14的上部可聯接到排出路徑蓋36,形成排放路徑。諸如O型環等密封構件插入到第五區域14與排出路徑蓋36之間的聯接面,從而將排放路徑與外部空氣隔離。此外,排放路徑蓋36的一個表面可以包括氣體出口35。氣體出口35可以連接到排放泵(未圖示)以排放氣體。
為了安全起見,反應器1的第四區域13的上部可連接到上蓋37。上蓋37可以保護RF分配板39不與外部接觸。
圖13是沿不同方向觀察的反應器1的橫截面圖。如圖13所示,除了圖12的第一氣體供給通道28之外,可以在反應器1的第一分隔件5中形成通過貫穿第一分隔件5的另一個表面而連接到第二區域4的至少一個第六通孔43。第六通孔43可以布置在第二分隔件6和第三分隔件7之間。
聯接構件40可以插入到第六通孔43中,並且因此氣體通道21和第一分隔件5可以通過聯接構件40彼此機械聯接。背板20可以包括在其一個表面中的孔,聯接構件40貫穿該孔。具有氣體通道21的背板20可以機械聯接到第一分隔件5。聯接構件40可以是導電體並且可以是螺絲釘。
支撐構件41被插入在聯接構件40周圍,並且支撐構件41由絕緣體形成。因此,聯接構件40和第一分隔件5可以通過支撐構件41彼此電絕緣,並且因此可以防止在電漿處理期間電漿功率的洩漏。
氣體通道21和氣體供給板22可以由導體形成。因此,氣體通道21和氣體供給板22可以用作在電漿處理中傳輸電漿功率的電極。
凸緣27、背板20、和支撐構件41可以由絕緣體形成。因此,可以防止電漿功率經由第一分隔件5通過反應器壁2洩漏。此外,通過用外部空氣填充在凸緣27周圍的第一通孔9和第六區域17,可防止在空間中產生寄生電漿。
布置在下部區域(第二區域4)中的氣體通道21和氣體供給板22可以通過單獨的聯接構件42彼此聯接。聯接構件42可以由導體形成並且可以是螺絲釘。在一些實施例中,包括在氣體供給單元中的氣體通道21和氣體供給板22可以一體地形成。
圖14是基板處理設備的排放部的放大截面圖。如圖14所示,排放部分可以包括第一排放部32和第二排放部 44。第一排放部32可以包括第一排放孔33和第一排放通道34。第二排放部44可以包括第二排放孔45以及第二排放通道46。第一排放孔33和第二排放孔45可以貫穿第一分隔件5。此外,第一排放孔33和第二排放孔45可以連接排放路徑,亦即第五區域14、第一排放通道34和第二排放通道46。
在反應空間18中,在與基板發生化學反應之後留下的殘留氣體通過第一排放部32和第二排放部44排放。大部分殘留氣體可以經由排放間隙48流到區域“A”。然後,區域“A”中的殘留氣體可以通過第一排放部32並且可以排放到作為排放路徑的第五區域14。
限定在氣體通道和氣體供給板旁邊的作為盲點的區域“B”的氣體可以通過第二排放部44排放到作為排放路徑的第五區域14中。第一排放孔33和第二排放孔45的直徑可以分別與第一排放通道34和第二排放通道46的直徑相同或不同。通過適當地調節第一排放孔33、第二排放孔45、第一排放通道34及/或第二排放通道46的直徑比率,可以控制基板邊緣部分周圍的排放效率,並且可以相應地調整膜的均勻性。而且,通過調節排放間隙48的尺寸,可以控制排放效率和膜的均勻性。
圖15至圖17是根據其它實施方式的反應器和包括反應器的基板處理設備的示意性透視圖。根據本揭露的實施方式的基板處理設備可以是根據上述實施方式的基板處理設備的修改示例。在下面的描述中省略了實施方式之間的 冗餘描述。
如圖15所示,根據本揭露的實施方式的反應器,除了包括第一氣體入口26、氣體出口35、和排放路徑蓋36之外,還可以包括保護蓋50。保護蓋50是用於保護RF輸送板52的保護蓋。
圖16和圖17示出移除了保護蓋50。如圖16和圖17所示,RF輸送板52連接到RF分配板39。RF分配板39電連接到多個RF桿54。在本揭露的實施方式中,為了均勻供給RF功率,RF桿54可以相對於氣體通道21的中心例如第一氣體入口26的中心對稱地布置。
RF輸送板52的上部可以連接到RF發生器(未圖示)。RF輸送板52的下部可以連接到RF分配板39。RF分配板39可以連接到RF桿54。
因此,由RF發生器產生的RF功率經由RF輸送板52、RF分配板39、和RF桿54輸送到氣體通道21。氣體通道21機械連接到氣體供給板22,並且氣體通道21和氣體供給板22可以一起用作RF電極。
至少一個RF桿54可以安裝在反應器中。RF桿54可以布置成貫穿圖12的第一分隔件5的一部分,其中第一分隔件5布置在圖12的第二分隔件6與圖12的第三分隔件7之間。在另一個實施方式中,如圖17所示,可以布置至少兩個RF桿54中,並且RF桿54可以相對於反應器的中心對稱地布置。對稱布置可以使RF功率被均勻地供給到作為RF電極的氣體通道21和氣體供應板22。
在一些實施方式中,筒式加熱器(未圖示)可以安裝在反應器壁2上方以加熱反應器壁。多個筒式加熱器可以對稱地布置,而因此可以實現反應器壁2均勻的溫度梯度。
圖18和圖19示意性地示出了根據其他實施方式的反應器的結構。根據本揭露的實施方式的反應器可以是根據上述實施例方式背板20的透視圖(圖18)和仰視圖(圖19)。
如圖18和圖19所示,第二分隔件6可以布置成與反應器壁2的上部空間的中心隔開一定距離。第三分隔件7可以布置在反應器壁2的側壁和第二分隔件6之間。圖12的從上部空間延伸到下部空間的氣體供給通道可以通過第二分隔件6的結構來設置。
第四分隔件19可以接觸圖12的背板20的上表面以支撐背板20。
聯接構件40和支撐構件41可以插入到螺紋孔56中。因此,圖12的氣體通道21和圖12的背板20可以機械地連接到圖12的第一分隔件5。
RF桿54插入到多個RF桿孔58中並電連接到氣體通道21。
在第五區域14中形成排放路徑,並且第一排放孔33和第二排放孔45可以分別連接到圖14的第一排放通道34和圖14的第二排放通道46,形成排放部。
第一通孔9的寬度可朝向圖12的第六區域17逐漸增大。第六區域17的空間可以被外部空氣填充並且可以在電漿處理期間用作絕緣體。因此,可以防止在由第一通孔9 形成的空間中產生寄生電漿。
圖20和圖21示意性地示出了根據其他實施方式的背板20的結構。根據本揭露的實施方式的背板可以是根據上述實施方式的背板20的透視圖(圖20)和仰視圖(圖21)。
背板20位於圖12的第一分隔件5和圖12的氣體通道21之間。此外,由絕緣體形成的背板20可以用作絕緣體以將圖12的第一分隔件5與在電漿處理期間作為RF電極的氣體通道21和氣體供給板22隔離開。
第四通孔11可以在背板20的上/下表面中與背板20的中心隔開一定距離地形成多個。第四通孔11可以從圖12的第二通孔10接收氣體,並將氣體供給到圖12的第五通孔12,其中第五通孔12貫穿圖12的氣體通道21。第三通孔23位於背板20的中心部分,並且圖12的凸緣27插入第三通孔23中。
圖22至圖24分別是根據本揭露的實施方式的包括在氣體供給單元中的氣體通道21的透視圖、俯視圖、和仰視圖。
氣體通道21可以包括多個第五通孔12,其中第五通孔12與氣體通道21的中心部分間隔一定距離布置。
如圖23所示,氣體通道21的上表面中的第五通孔12的位置可以對應於圖20和圖21中所示的背板20的第四通孔11的位置。
形成在氣體通道21中的第五通孔12可以沿垂直方向或傾斜方向貫穿氣體通道21。
例如,如圖23所示,第五通孔12可以沿氣體通道21的第一表面上的具有第一直徑d的第一圓周布置或形成。進一步的,如圖24所示,第五通孔12可沿氣體通道21的第二表面上具有第二直徑d'的第二圓周布置或形成。在一個示例中,第一直徑d可大於第二直徑d'。然而,本發明構思不限於此,並且可以是d=d'或d≠d'。
圖25示出貫穿背板20和氣體通道21的第四通孔11和第五通孔12的各種實施方式。
如圖25所示,貫穿氣體通道21的第五通孔12可沿垂直方向或傾斜方向貫穿氣體供給板22。當第五通孔12沿傾斜方向貫穿氣體供給板22時,第五通孔12可以通向氣流通道24的內部或其外部。雖然沒有示出,但是第四通孔11不限於垂直延伸的形狀。
圖26示出了根據另一個實施方式的第二通孔10、第四通孔11、和第五通孔12,第二通孔10、第四通孔11、和第五通孔12貫穿第三分隔件7、第一分隔件5、背板20、和氣體通道21。
如圖26所示,第二氣體入口31、第二通孔10、緩衝空間38、第四通孔11、和第五通孔12中的每一個都被設置為多個並且多種氣體經由第二氣體入口31被供給到氣流通道24。例如,可以通過相應的入口供給源氣體、反應氣體、和淨化氣體。
經由第二通孔10、第四通孔11、和第五通孔12供給到氣流通道24的氣體可以經由氣體供給板22下的邊緣部 分供給到反應空間18的邊緣區域,或者供給到反應空間18的中央部分與邊緣部分之間的區域。作為結果,可以選擇性地控制形成在待處理的基板的邊緣區域(邊緣部分)中或形成在基板的中央部分和邊緣區域之間的特定周邊部分中的膜的均勻性或特性。
例如,可以根據通過第二通孔10、第四通孔11和第五通孔12供給的氣體的流率以及貫穿氣體通道21的第五通孔12的傾斜度而被選擇性地控制沉積在基板的邊緣區域中或在基板的中心部分和邊緣部分之間的區域中的膜的均勻性。此外,由於這些因素,可以減小或控制與在基板中心部分沉積的膜的均勻性偏差。
例如,可以沉積在基板的中心部分與邊緣部分之間具有最小均勻性偏差的膜。在另一個示例中,可以沉積凹形形狀的膜,其中基板的邊緣部分比其中心部分厚,或者可以沉積具有凸形形狀的膜,其中基板的中心部分比其邊緣部分厚。通過第二通孔10、第四通孔11、和第五通孔12供給的氣體可以是惰性氣體。在一些實施方式中,氣體可以是參與形成膜的反應氣體及/或源氣體。
圖27和圖28是示出根據本揭露的實施方式的在反應器中通過電漿增強原子層沉積(PEALD)方法沉積在基板上的SiO2膜的厚度的圖。曲線圖顯示了通過第二通孔10、第四通孔11、和第五通孔12供給的氣體對膜的均勻性的影響,特別對沉積在基板的邊緣部分的膜的均勻性的影響。
曲線的橫軸表示當基板的直徑為300mm時距離晶片 的中心左右150mm的距離。曲線的縱軸表示膜的厚度。在本實施方式中,通過將貫穿氣體通道21的第五通孔12的角度設定為30°並改變氣體流量來評估影響。
如表1所示,通過作為氣體供給通道的第一通孔(主孔),供給1000標準毫升/分鐘(sccm)的Ar作為源載體,並供給3500sccm的Ar作為淨化氣體,並且200sccm的O2可作為反應氣體連續供給整個處理期間(相應地,總流量為4,700sccm)。供給400瓦的電漿,在此過程中在反應空間保持2托(torr)的壓強。
僅當電漿被供給並與基板上的源分子反應時才活化氧。因此,當不供給電漿時,氧氣充當淨化氣體。因此,氧氣可以在本過程中用作反應性淨化氣體。
通過第二通孔供給的氣體可以是Ar或O2。氣體可以在整個過程中連續供給。可以根據期望的基板周圍的膜均勻性適當地控制氣體的流量。
根據上述實施方式的發明構思可總結如下。
-通過第一通孔連續供給源氣體、淨化氣體和反應性 淨化氣體的第一操作
-通過第二通孔連續供給淨化氣體和反應性淨化氣體中的至少一者的第二操作
-施加電漿的第三操作
-可以同時執行第一操作和第二操作,而可以在執行第一操作和第二操作的同時臨時執行第三操作。
第一通孔對應於圖12的第一氣體供給通道28,並且第二通孔對應於圖12中貫穿至少一部分氣體供給單元的第二通孔10、第四通孔11和第五通孔12。
如圖27所示,可以看出,隨著通過第二通孔供給的Ar氣體的流量增加,沉積在基板的邊緣部分處的膜的厚度減小。而且,如圖28所示,可以看出,隨著通過第二通孔供給的氧氣的流量增加,沉積在基板的邊緣部分處的膜的厚度增加。換句話說,通過引起和控制供給到反應空間的周邊部分的源氣體和反應氣體對於基板的周邊部分的阻塞效應,可以控制基板上的膜的均勻性。
本發明構思的實施方式不能被解釋為限於本說明書中描述的部分的特定形式,並且可以包括例如在製造期間產生的形式變化。
應該理解的是,這裡描述的實施方式應該僅僅是描述性的而不是出於限制目的。在每個實施方式中的特徵或方面的描述應通常被認為可用於其他實施方式中的其他類似特徵或方面。
雖然已經參考圖式描述了一個或多個實施方式,但是 本領域普通技術人員將會理解,可以在其中進行形式和細節上的各種改變,而不背離由以下申請專利範圍定義的精神和範圍。
Claims (19)
- 一種基板處理設備,包括:包括至少一個通孔的分隔件;通過前述通孔布置在前述分隔件中的導管;連接到前述導管的氣體供給單元;以及設置在前述通孔的側壁和前述導管之間的低介電材料;其中,前述分隔件包括朝向前述氣體供給單元突出的第一突起;其中,前述低介電材料接觸前述第一突起的一個側表面;其中,前述分隔件的前述第一突起位於前述氣體供給單元上方;其中,前述氣體供給單元用作產生電漿的電極。
- 如請求項1所記載之基板處理設備,其中,前述低介電材料包括空氣。
- 如請求項2所記載之基板處理設備,其中,在前述基板處理設備中形成至少一個用於連通前述空氣和外部的路徑。
- 如請求項3所記載之基板處理設備,其中,在前述分隔件與前述導管之間形成前述路徑。
- 如請求項3所記載之基板處理設備,其中,在前述分隔件中形成前述路徑。
- 如請求項1所記載之基板處理設備,其中,前述分隔 件進一步包括至少一個第二突起,前述第二突起朝向前述氣體供給單元突出並布置在前述第一突起和前述導管之間;其中,前述低介電材料設置在前述第一突起和前述第二突起之間及前述導管和前述第二突起之間。
- 如請求項1所記載之基板處理設備,其中,前述分隔件包括位於形成有前述通孔的區域中的臺階部;前述導管包括凸緣;並且前述導管通過在前述凸緣和前述臺階部之間的聯接而連接到前述分隔件。
- 如請求項7所記載之基板處理設備,其中,在前述臺階部與前述凸緣之間形成有與外部空氣連通的路徑。
- 如請求項1所記載之基板處理設備,其進一步包括布置在前述分隔件和前述氣體供給單元之間的絕緣板。
- 如請求項9所記載之基板處理設備,其進一步包括射頻桿,前述射頻桿通過貫穿前述分隔件的至少一部分和前述絕緣板而連接到前述氣體供給單元。
- 如請求項1所記載之基板處理設備,其中,前述通孔在第一區域中具有第一直徑,並且在前述第一區域的下部中具有比前述第一直徑大的第二直徑。
- 如請求項11所記載之基板處理設備,其中,前述通孔的至少一部分的直徑朝向前述氣體供給單元連續地增加。
- 如請求項12所記載之基板處理設備,其中,前述通孔 的至少一部分的側截面輪廓具有鐘形形狀。
- 一種基板處理設備,包括:包括至少一個通孔的分隔件;通過前述通孔布置在前述分隔件中的絕緣導管;連接到前述絕緣導管的氣體供給單元;布置在前述分隔件和前述氣體供給單元之間的絕緣板;以及通過貫穿前述絕緣板而連接到前述氣體供給單元的射頻桿;其中前述分隔件包括:與前述絕緣板接觸的至少一個第一突起;與前述絕緣板接觸並布置在前述第一突起和前述絕緣導管之間的至少一個第二突起;布置在前述第一突起和前述第二突起之間的前述射頻桿;以及在前述分隔件與前述絕緣板之間、在前述通孔的側壁與前述絕緣導管之間、以及在前述第一突起與前述第二突起之間形成的空氣填充的空間。
- 一種基板處理設備,包括:提供氣體供給通道的分隔件;連接到前述氣體供給通道的氣體供給單元;以及前述分隔件和前述氣體供給單元之間的空氣;其中前述分隔件包括朝向前述氣體供給單元突出的至少一個第一突起;並且 前述空氣接觸前述第一突起的一個側表面;其中,前述分隔件進一步包括至少一個第二突起,前述第二突起朝向前述氣體供給單元突出並布置在前述第一突起和前述氣體供給通道之間;並且在前述第一突起和前述第二突起之間及前述氣體供給通道和前述第二突起之間設置前述空氣。
- 如請求項15所記載之基板處理設備,其中,前述第一突起的至少一部分與前述氣體供給單元重疊。
- 如請求項15所記載之基板處理設備,其中,前述第一突起的至少一部分布置在不與前述氣體供給單元重疊的區域中。
- 如請求項15所記載之基板處理設備,其進一步包括射頻桿,前述射頻桿連接到前述氣體供給單元並且布置在前述第一突起與前述第二突起之間。
- 如請求項17所記載之基板處理設備,其進一步包括布置成接觸前述空氣的吸濕件。
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- 2017-12-06 TW TW106142731A patent/TWI655312B/zh active
- 2017-12-07 US US15/835,328 patent/US11222772B2/en active Active
- 2017-12-13 CN CN201711328250.8A patent/CN108231624B/zh active Active
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TW201833373A (zh) | 2018-09-16 |
US11222772B2 (en) | 2022-01-11 |
KR20180068582A (ko) | 2018-06-22 |
CN108231624B (zh) | 2022-05-03 |
CN108231624A (zh) | 2018-06-29 |
US20180166258A1 (en) | 2018-06-14 |
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