TWI685913B - 半導體反應室之噴淋頭 - Google Patents

半導體反應室之噴淋頭 Download PDF

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TWI685913B
TWI685913B TW102136496A TW102136496A TWI685913B TW I685913 B TWI685913 B TW I685913B TW 102136496 A TW102136496 A TW 102136496A TW 102136496 A TW102136496 A TW 102136496A TW I685913 B TWI685913 B TW I685913B
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gas
slots
shower head
slot
cavity
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TW201423902A (zh
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卡爾 懷特
泰德 杜恩
艾瑞克 席羅
凱勒 方杜魯利亞
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荷蘭商Ａｓｍ智慧財產控股公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

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  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本發明提供一種噴淋頭，其包括：一主體，其具有一開口；一第一板，其定位於該開口內且具有複數個狹槽；一第二板，其定位於該開口內且具有複數個狹槽；且其中該第一板之複數個狹槽中每一者與該第二板之複數個狹槽同心地對準。

Description

半導體反應室之噴淋頭
本揭露內容一般而言係關於半導體處理，且更特定而言係關於一種用於將處理氣體提供至反應室中之基板或晶圓之設備及方法。
半導體製造製程通常係於受控條件下利用支撐於腔室內之基板來進行。為達許多目的，半導體基板(例如，晶圓)係於製程室內部加熱。例如，基板可藉由與內熱式晶圓固持體或「吸盤」之直接實體接觸來加熱。「承載台」為用於系統中之晶圓支撐體，在該等系統中晶圓及承載台吸收熱量。
用於處理之重要受控條件中的一些條件包括但不限於：腔室之壓力、流入腔室中之流體流率、反應室之溫度、流入反應室中之流體的溫度以及晶圓載入期間承載台上之晶圓位置。
反應室內之加熱可以許多方式發生，其包括定位於基板表面上以便直接加熱承載台之燈觸排(lamp bank)或陣列(lamp array)，或定位於承載台下方的承載台加熱器/台座加熱器。傳統地，台座式加熱器延伸至入反應室中穿過底壁而承載台係安裝於加熱器之頂面上。加熱器可包括封閉於加熱器內之電阻加熱元件來提供傳導熱且增加承載台溫度。
一致的處理及一致的結果一般需要對系統中之處理氣體的 謹慎控制及計量。用於控制處理氣體之最後場所之一係處於噴淋頭處，其中處理氣體隨即接觸反應室中之晶圓。另外，獲得最佳流率及均勻性有時可為困難的，其係歸因於噴淋頭孔遭堵塞或寄生性前驅物反應發生於噴淋頭內。
本文揭露各種觀點及實行方案，該等觀點及實行方案係關於將一處理氣體提供至一晶圓之反應室噴淋頭設計及方法。在一觀點中，一種噴淋頭，其包括：一主體，其具有一開口；一第一板，其定位於該開口內且具有複數個狹槽；一第二板，其定位於該開口內且具有複數個狹槽；且其中該第一板之複數個狹槽中每一者與該第二板之複數個狹槽同心地對準。
在一實行方案中，該第一板之狹槽可朝向該第二板之狹槽延伸。該第一板之狹槽可延伸至該第二板之狹槽的一底面。該第一板之狹槽及該第二板之狹槽可定向成複數個環，其中相鄰環相對於彼此偏移。該第一板之複數個狹槽及該第二板之複數個狹槽可定向成複數個環，其中環每隔一個而對準。一間隙可形成於該複數個第一狹槽中每一者與該複數個第二狹槽中每一者之間，且其中該間隙於0.575mm與0.800mm之間變化。一間隙可形成於該複數個第一狹槽中每一者內，且其中該間隙於0.636mm與1.100mm之間變化。
在另一實行方案中，一第一氣流空腔可形成於該主體與該第一板之間且一第二氣流空腔可形成於該第一板與該第二板之間。該第一氣流空腔可輸送一第一氣體且其中該第二氣流空腔可輸送一第二氣體。該第 一氣體空腔可進一步包括與一第一氣流入口分開的一沖洗通道。該沖洗通道可定位於該第一空腔之一周邊處。該沖洗通道可於一沖洗操作期間提供額外沖洗氣流。該沖洗通道可操作地連接至一排氣裝置。該沖洗通道可於一沖洗操作期間移除該第一氣體。該第二氣體空腔可進一步包括與該第二氣流入口分開的一沖洗通道，且其中該沖洗通道可提供一氣流或一真空。
在又一實行方案中，複數個孔洞可自該第一板之一頂面延伸至一底面且與該第一板之複數個狹槽分開。該複數個孔洞可與一氣體通道流體連通，該氣體通道與一第二氣體通道分開，該第二氣體通道與該複數個第一板狹槽流體連通。該複數個狹槽可大體成弧形形狀。該複數個狹槽可延伸小於該噴淋頭主體之一圓形距離的百分之50。該第一板之狹槽中的一氣體可不接觸該第二板之狹槽中的一氣體，直至兩種氣體已完全行進穿過該等狹槽。
在另一觀點中，一種半導體工具，其包括：一反應室，其界定一處理區域；一工件支撐體，其處於該反應室內；一噴淋頭，其用於使至少一種處理氣體分佈於該處理區域內；以及一處理閥門歧管，其與該噴淋頭流體連通來控制該至少一種處理氣體流入該噴淋頭中；其中該噴淋頭進一步包括一第一複數個弧形狹槽及一第二複數個弧形狹槽，該複數個弧形狹槽中每一者具有處於一工件支撐體上方的一共同退出平面，且該第一複數個弧形狹槽與該第二複數個弧形狹槽同心地對準。
在一實行方案中，該至少一種處理氣體在離開該第一複數個弧形狹槽及該第二複數個弧形狹槽之後徑向地向外流動。該複數個第一弧形狹槽及複數個第二弧形狹槽中每一環可交替地與第一弧形狹槽及第二弧 形狹槽中相鄰環偏移。該半導體工具可包括與該第一複數個弧形狹槽流體連通的一真空埠及與該第二複數個弧形狹槽流體連通的另一真空埠。該半導體工具可進一步包括與該第一複數個弧形狹槽流體連通的一沖洗埠及與該第二複數個弧形狹槽流體連通的另一沖洗埠。該等沖洗埠可朝該複數個第一弧形狹槽及複數個第二弧形狹槽之外徑向定位。
此發明內容係提供來以簡化形式介紹概念之選擇，以下實施方式中進一步描述該等概念。此發明內容並不意欲認定所主張主題之關鍵特徵或基本特徵，亦不意欲用來限制所主張主題之範疇。此外，所主張主題並不受限於解決本揭露內容任何部分中述及之任何缺點或所有缺點的實行方案。
G‧‧‧間隙
S‧‧‧間隙
20‧‧‧反應室
22‧‧‧上腔室
24‧‧‧下腔室
26‧‧‧噴淋頭
28‧‧‧承載台總成
30‧‧‧箭頭
32‧‧‧上部板/噴淋頭上部板
34‧‧‧中間板
36‧‧‧底板
38‧‧‧冷卻翼片
40‧‧‧凸起中央部分
42‧‧‧第二氣孔
44‧‧‧第一氣孔
46‧‧‧第一氣體空腔
48‧‧‧導管
50‧‧‧通道
52‧‧‧第二氣體空腔
54‧‧‧氣體控制閥總成
56‧‧‧內O型環
58‧‧‧外O型環
60‧‧‧第一氣孔
62‧‧‧第二氣孔
64‧‧‧O型環
66‧‧‧O型環
68‧‧‧O型環
72‧‧‧排氣通道
74‧‧‧處理區域
76‧‧‧排氣間隙
78‧‧‧頂側
80‧‧‧底側
82‧‧‧開口
84‧‧‧密封表面
86‧‧‧狹槽
88‧‧‧狹槽
90‧‧‧狹槽
92‧‧‧側壁
94‧‧‧排氣埠
96‧‧‧安裝孔
98‧‧‧頂側
100‧‧‧底側
102‧‧‧狹槽
104‧‧‧突出物
106‧‧‧密封表面
107‧‧‧O型環腔
108‧‧‧底面
110‧‧‧凹入O型環表面
112‧‧‧外表面
113‧‧‧頂側
114‧‧‧底側
116‧‧‧底側
118‧‧‧O型環腔
120‧‧‧O型環腔
122‧‧‧氣體空腔表面
124‧‧‧密封表面
126‧‧‧O型環腔
128‧‧‧箭頭
130‧‧‧箭頭
132‧‧‧肩部
134‧‧‧斜向側壁
136‧‧‧箭頭
138‧‧‧終止區域
140‧‧‧噴淋頭
142‧‧‧第二氣體管線
144‧‧‧充氣部
146‧‧‧內O型環
147‧‧‧外O型環
148‧‧‧蓋帽
149‧‧‧孔
150‧‧‧閥門
151‧‧‧內O型環
152‧‧‧閥門氣體管線
153‧‧‧外O型環
154‧‧‧第二氣體管線
155‧‧‧孔
156‧‧‧充氣部
158‧‧‧噴淋頭
160‧‧‧內O型環
161‧‧‧外O型環
162‧‧‧充氣管線
163‧‧‧排氣進給管線
圖1例示反應室之橫截面圖，其中承載台處於晶圓載入位置。
圖2例示噴淋頭之基底構件的頂部透視圖。
圖3例示噴淋頭之基底構件的底部透視圖。
圖4例示噴淋頭之中間板構件的頂部透視圖。
圖5例示噴淋頭之中間板構件的底部透視圖。
圖6例示噴淋頭之上部板構件的頂部透視圖。
圖7例示噴淋頭之上部板構件的底部透視圖。
圖8例示圖1中所見之橫截面圖的放大圖。
圖9例示圖8中所見且標記為圖9之橫截面圖的進一步放大視圖。
圖10例示圖9中標記為圖10之截面的放大圖。
圖11例示噴淋頭總成之部分底視圖。
圖12例示圖11中標記為圖12之截面的放大圖。
圖13例示噴淋頭之橫截面圖的放大圖，該噴淋頭具有定位於噴淋頭周邊附近的複數個埠。
圖14例示噴淋頭之橫截面圖的放大圖，該噴淋頭具有定位於噴淋頭周邊附近的複數個埠及介於該複數個埠與真空排氣管線之間的連接件。
可就功能塊組件及各種處理步驟而言來描述本發明之觀點及實行方案。此等功能塊可藉由任何數目之硬體或軟體組件來實現，該等組件係配置來執行指定功能且達成各種結果。例如，本發明之觀點可使用各種感測器、偵測器、流量控制裝置、加熱器及其類似物，從而可執行各種功能。另外，可結合任何數目之處理方法來實踐本發明之觀點及實行方案，且所述設備及系統可使用任何數目之處理方法，且所述設備及系統僅僅為本發明應用之實例。
圖1例示具有上腔室22及下腔室24之反應室20。上腔室22包括噴淋頭26，而下腔室24大體包括可為此項技術中公知之承載台總成28，該承載台總成可在與箭頭30相關之方向上移動，以便接收用於載入、卸載以及處理之晶圓(未圖示)。雖然本揭露內容例示且描述處於具有上區段及下區段之分離式腔室中的噴淋頭26，但是將噴淋頭26納入非分離式腔室反應器中是在本揭露內容之精神及範疇內。
噴淋頭26包括上部板32、中間板34以及底板36。上部板32包括自上部板垂直延伸之複數個冷卻翼片38，及具有複數個第二氣孔42之凸起中央部分40，該等氣孔可以一定角度定向。在一實行方案中，複數個第二氣孔42可為至少三個氣孔，而在另一實行方案中，可存在六個或六個以上的氣孔，但是可納入任何適合數目之氣孔。此外，第一氣孔44可垂直延伸穿過凸起中央部分40且延伸至第一氣體空腔46中，該第一氣體空腔係藉由上部板32與中間板34界定且定位於其之間。類似地，第二氣孔42延伸穿過上部板32中之導管48，且具體而言延伸穿過導管48中之通道50以到達第二氣體空腔52，該第二氣體空腔係藉由中間板34與底板36界定且定位於其之間。通道50亦可延伸穿過中間板34在，之後進入第二氣體空腔52。
氣體控制閥總成54可定位於噴淋頭26上，且特定而言定位於帶有內O型環56及外O型環58之凸起中央部分40上，該等O型環防止氣體於遞送期間之共混(comingling)且亦防止氣體於氣體控制閥總成54與凸起中央部分40之間的相交處洩漏。氣體控制閥總成54亦包括第一氣孔60及複數個第二氣孔62。如圖1中可見，可利用任何適合數目之第二氣孔62，然而，可需要類似數目之通道50來傳送氣體越過第一氣體空腔46且進入第二氣體空腔52。類似地，O型環64係用來分開且密封介於上部板32與中間板34之間的區域，而O型環66係用來分開且密封介於中間板34與底板36之間的區域。以又一類似之方式，O型環68為各O型環之示範例，其位於導管48與噴淋頭中間板34之頂面的相遇處，以便防止第二氣體洩漏至第一空腔中且防止第一氣體進入通道50。最終，如以下將更詳細地論述，排 氣通道72係形成於底板36中且可由底板36完全封閉或由底板36部分形成。排氣通道72經由排氣間隙76來與處理區域74流體連通。雖然本揭露內容及圖式例示自噴淋頭上部板32延伸之導管48，但是在本揭露內容之精神及範疇內，可重新佈置導管之方位，以便導管自中間板34垂直向上延伸且接觸上部板32之底面，諸如O型環之適當密封機構可位於該底面處。
圖2及圖3分別例示底板36之頂部透視圖及底部透視圖。底板36包括頂側78及底側80，其中頂側78具有將上部板32及中間板34收納於其中的開口82。密封表面84朝狹槽86之外徑向定位，該密封表面與該狹槽兩者係定位於開口82內。如在圖2及圖3中可見，狹槽86可大體成弧形形狀且隨著狹槽86徑向向內移動，徑向尺寸逐步變小。在另一實行方案中，狹槽86彼此偏移，以使得最外環上之狹槽88與第二最外環上之相鄰狹槽90偏移。此趨勢或定向可繼續徑向向內以使得狹槽86之相鄰環彼此偏移，但是狹槽90之環每隔一個彼此平行且由於底板36中各向內狹槽之半徑減小而具有稍微更小的徑向尺寸。例如，最向內狹槽90之形狀可更類似圓形而不是狹槽，或在其他實行方案中，最向內狹槽90可不延伸至底板36之完整的中心。
如以上所論述，底板36亦包括排氣通道72之至少一部分，且排氣間隙76之一部分係由通道72邊緣形成。側壁92包括具有安裝孔96之排氣埠94，該等安裝孔用於使真空或排氣設備固定以自腔室及排氣通道移除未使用之前驅物及載體氣體。
現在參閱圖4及圖5，其中更詳細地展示中間板34。中間板34亦包括頂側98及底側100。複數個狹槽102與底板36中之狹槽86類似， 因為狹槽102大體成弧形形狀，其中徑向尺寸隨著各列狹槽自徑向外側變化至徑向內側而減小。另外，狹槽102亦類似於狹槽86而定位，因為各相鄰狹槽列彼此偏移，而狹槽列每隔一個可彼此平行或彼此對準，其由於板自外側至內側之更小半徑而僅具有稍微更小之徑向尺寸。另外，狹槽102亦可包括愈來愈小之狹槽以達到最內狹槽102可大體成圓形形狀之程度。不管位置，狹槽102及86並不圍繞噴淋頭延伸超過百分之50或180度，且在額外實施例中可僅延伸90度或90度以下。
圖4亦例示通道50，其自頂側98延伸穿過底側100且進入形成於底側100上之複數個突出物104之間的第二氣體空腔52中。例如，通道50可藉由經佈置以收納O型環68之凹入O型環表面110環繞。在一實行方案中，各相應通道50及導管48包括其自身各別O型環以確保第一氣體及第二氣體在需要之前不彼此相遇或互相作用。
圖5更清晰地例示突出物104，其自中間板34之底側100延伸足夠長來裝配於底板36之狹槽86內。具體而言，當密封表面106包括O型環空腔107且該表面接觸底板36之密封表面84時，突出物104經尺寸設定以延伸穿過底板36之狹槽86。更進一步地，突出物104較佳地延伸穿過狹槽86，以使得突出物104之底面108平齊或甚至與延伸穿過底板36之狹槽86的底面平齊。因此，突出物104及其中之狹槽102與底板36之狹槽86共面地終止，以使得自狹槽102及86流動之氣體不可能共混，直至該等氣體在離晶圓或工件(未圖示)之相同距離處離開噴淋頭總成。
一旦組裝，環繞突出物104中每一者且由下部板36之頂面界定的區域輔助界定第二氣體空腔52。具體而言，第二氣體可在到達第二 氣體空腔52之前流動穿過上部板中之氣孔42且進入通道50。第二氣體空腔52隨後容許第二氣體介於由突出物104之外表面112界定之區域與狹槽86之內表面之間流動，此歸因於狹槽86及突出物104之互補形狀、設計以及方位。另外，第一氣體流動穿過狹槽102，且因此穿過突出物104直至到達突出物104之底面108。因此，第一氣體及第二氣體可剛好在噴淋頭底板36之底側80的下方相遇。
現在參閱圖6及圖7，分別以頂部透視圖及底部透視圖來展示上部板32。上部板32包括頂側113及底側114。如先前所提及，可將複數個冷卻翼片38遍及頂側113加以安置，從而更好地控制加熱及氣體流率，以防止氣體於噴淋頭內分解。凸起中央部分40亦包括用於收納O型環58之O型環腔118，而O型環空腔120係用來在將氣體控制閥54定位於凸起中央部分40上時固定O型環56。
如以上所論述，上部板32之底側114包括具有通道50之導管48。導管48自氣體空腔表面122延伸，該氣體空腔表面有助於提供氣體空腔46之部分障壁。具體而言，氣體空腔表面122形成用於氣體空腔46之頂壁及側壁且接收來自第一氣孔44之第一氣流。另外，導管48亦充當氣體空腔46之邊界，因為該等導管與空腔封閉隔開且將第二氣體輸送穿過通道50。底側114亦包括密封表面124，其具有形成於表面中之O型環腔126。當組裝時，密封表面124接觸中間板34之頂側98且O型環64係定位於O型環腔126內，從而將氣體空腔46與第二氣體空腔52密封隔開。雖然本揭露內容及例示說明提供噴淋頭26之一實例，但是一般技藝人士將立即認識到的是，在不脫離本揭露內容之精神及範疇的情況下可作出許多修改。例 如且不限制而言，噴淋頭形狀可不同於圓形，可包括直孔42而非斜向孔且可修改各種孔、通道以及翼片之大小來配合反應器應用。處理氣體可如所示進入容積中，或甚至如以下將更詳細地論述，自外周邊進給管及/或沖洗通道進入。
現在參閱圖8，其為反應室20內所組裝噴淋頭26之放大圖，氣體空腔46係部分地藉由上部板32之底側116的氣體空腔表面122、導管48以及中間板34之頂側98來形成。氣體空腔表面122係大體展示為自徑向向外位置至徑向向內位置、自向上方向成斜向，而中間板34之頂側98係展示為大體平坦的。在另一實行方案中，氣體空腔表面122可大體為平坦的且頂側98可在任一方向上成斜向，另外，頂面98及氣體空腔表面122可均為平坦的或在相反方向上為錐形，如對於個別應用而言可為適當的情況。
以類似方式，第二氣體空腔52係大體藉由中間板34之底側100、突出物外表面112以及底板36之頂側78來界定。如所示，中間板34之底側100可大體為平坦的，其中頂側78自徑向向外位置至徑向向內位置向下成斜向。在另一實行方案中，頂側78可為平坦的，而底側100可成斜向。在又一實行方案中，在不脫離本揭露內容之精神及範疇的情況下，頂側78及底側100可均為平坦的或以相同或不同方向成斜向。各氣體空腔46及52之形狀、大小以及厚度可經角度設定或尺寸設定，從而提供更好的流動特徵以及有限的囊袋(pocket)形成，該囊袋形成可增加沖洗時間。
第一氣體之氣流可大體於與箭頭128相關聯之方向上行進穿過第一氣孔44，進入氣體空腔46且穿過突出物104中之狹槽102。第二 氣體之氣流可大體於與箭頭130相關聯之方向上行進穿過第二氣孔42，進入通道50，接著進入第二氣體空腔52，之後於突出物外表面112與狹槽86之間退出。
圖9例示噴淋頭26之一部分的放大圖且具體而言展示突出物104，該等突出物中之狹槽102定位於底板36之狹槽86內。雖然噴淋頭之操作及佈置保持相同，但是將理解的是，狹槽102可以第一半徑延伸自頂側98至突出物底面108之距離的大致三分之二，之後在狹槽102內達到第二較小半徑。肩部132可標記自第一半徑至第二半徑之過渡，該過渡在處理操作及沖洗操作期間對氣流特徵而言為有利的。在另一實行方案中，肩部132可如所示為平坦的，或向內斜向以輔助氣體在接觸斜向側壁134之前自128流入各種狹槽102中。
圖10為噴淋頭之更詳細放大圖。具體而言，可更詳細地觀察肩部132以及自肩部以上第一半徑至肩部132以下更小半徑之各種構件。應理解的是，於狹槽102內納入肩部132及變化/不同半徑僅僅為各種構造之實例，該等構造為可利用的且並不意欲以任何方式限制本揭露內容。突出物104可包括斜向側壁134以在氣體退出突出物時提供該氣體自狹槽102之均勻流動。亦可見的是，一間隙係形成於突出物外表面112與狹槽86之間，該間隙係用來將第二氣體輸送至反應室中。在一實行方案中，介於突出物外表面112與狹槽86之間的間隙G介於0.575mm與0.800mm之間，而狹槽102中之間隙S介於0.636mm與1.100mm之間。在另一實行方案中，間隙G可介於0.100mm與2mm之間變化且間隙S可介於0.100mm與2mm之間變化。在又一實行方案中，間隙G及S可因各徑向位置而變化，以使 得間隙G及S自徑向向內位置至徑向向外位置或自徑向向外位置至徑向向內位置增加或減小。
圖11及圖12例示經組裝噴淋頭26之放大底視圖，其展示間隙G及S。另外，箭頭136例示氣流在退出間隙G及S之後的定向移動。具體而言，氣體在經過突出物底面108之後均徑向向外流動。有利地，狹槽86及102之複數個重疊列在大體徑向方向上提供均勻氣體流。重疊性質有助於確保特定狹槽86及102之終止區域138仍然出現來自徑向向內相鄰列之氣體。因此，由於在各終止區域138處存在重疊而達成更均勻氣流。
圖13例示第二觀點的噴淋頭140，其具有與噴淋頭26大體類似的組件。上部板32包括第二氣體管線142，其自氣體空腔表面122延伸穿過頂側114。在一實行方案中，可存在定位於氣體空腔表面122周邊附近的六條或六條以上第二氣體管線142，然而可利用任何數目之第二氣體管線142，其包括但不限於：1、2、3、4、5或6條以上。第二氣體管線142可由各第二氣體管線處之充氣部144或複數個單一充氣部進給，其中內O型環146及外O型環147係用來密封蓋帽148。閥門150係定位於蓋帽148上且可延伸穿過蓋帽148。孔149可位於蓋帽148內，從而允許閥門150與充氣部144連通。閥門氣體管線152亦連接至閥門152且經由閥門150與充氣部144流體連通。雖然僅展示用於充氣部144之單一閥門150，但是可利用任何適合數目之閥門，且在一實行方案中，存在與第二氣體管線142同樣多的閥門。
底板36中可包括複數條第二氣體管線154，在適用時，該等管線與充氣部156或複數個充氣部流體連通。內O型環151及外O型環 153可再次共同密封充氣部156及蓋帽148，而一或多個閥門150係定位於蓋帽148上。孔155可定位於蓋帽148中，以便閥門150可與充氣部156連通。另外，在此實行方案中，閥門氣體管線152再次連接至所有閥門150。與用於上部板32之閥門類似，在不脫離本揭露內容之精神及範疇的情況下，底板36中之閥門亦可為任何適合數目，充氣部之數目可變化且第二氣體管線之數目可變化。
在操作中，閥門150操作來分別提供正壓力以使載體氣體於沖洗步驟期間流動，或提供負壓力以自噴淋頭氣體空腔(46及52)抽出氣體。例如，在一實行方案中，上部板32之閥門150可提供載體氣體之沖洗氣流，而底板36之閥門150可提供真空來移除餘留於噴淋頭第二氣體空腔內之未使用前驅物。以相同方式，可使各角色(role)反轉，以便使上部板32之閥門150提供真空，而底板36之閥門150提供沖洗氣體。在又一實行方案中，閥門150均可於上部板32及底板36中提供沖洗氣流，或閥門150均可於上部板32及底板36中提供真空。一般技藝人士將立即理解的是，在不脫離本揭示內容之精神及範疇的情況下，可利用來自相同閥門構型之許多操作。亦可為如下情況：在不同步驟期間脈衝式實施真空或沖洗，例如，ALD製程之情況，其中在沖洗步驟期間打開各閥門來輔助在前驅物脈衝之後自各容積移除前驅物。
圖14例示第三觀點的噴淋頭158，其類似於噴淋頭140，因為如應用可需要的，兩種噴淋頭均利用閥門150來提供沖洗氣體或真空。若干不同特徵包括：內O型環160及外O型環161，其環繞鄰近蓋帽148之排氣進給管線163；及充氣線162，其連接充氣部156與閥門150。具體而 言，排氣進給管線163連接閥門150及第二氣體管線154，以使得對閥門150施加之真空移除第二氣體空腔52中之未使用前驅物且將未使用前驅物直接傾卸於排氣通道72中。可以類似方式操作上部板32中之閥門150以提供真空，該真空可或不可導入排氣通道72或可提供惰性氣體之沖洗氣體來輔助沖洗操作。在不脫離本揭露內容之精神及範疇的情況下，可將以上所論述之用於噴淋頭140之各種佈置、方位、修改以及程序納入噴淋頭158中。因此可見，可作出許多變化來輔助減少共振時間及增加沖洗效率。
可在許多處理應用中利用以上所述之噴淋頭及氣體遞送系統，該等處理應用包括化學氣相沈積(CVD)及原子層沈積(ALD)或其組合。一特別有用之應用為使用過渡金屬鹵化物及金屬有機化合物或矽/硼氫化物來沈積過渡金屬碳化物、硼化物以及矽化物。另外，藉由使用過渡金屬鹵化物與金屬有機化合物及矽或硼氫化物，亦可獲得正面結果。亦可沈積純金屬及金屬氮化物或碳化物之奈米層板(nanolaminates)。適合金屬有機化合物之實例包括但不限於：三甲基鋁(TMA)、三乙基鋁(TEA)、三乙基硼烷(TEB)、二甲基氫化鋁(DMAH)、二甲基乙基胺鋁烷(DMEAA)、胺氧化鋁硼烷(amine aluminaborane)(TMAAB)以及相關化學物質。適合的矽及硼氫化物之實例包括但不限於：矽烯(SiH2)、二矽烷(Si2H6)、三矽烷(Si3H8)、二硼烷(B2H6)以及相關化學物質。
在操作中，金屬有機化合物在存在過渡金屬鹵化物時傾向於更容易分解。因此，有利的是，經由氣體分離式噴淋頭使可包括矽或硼元素之過渡金屬碳化物沈積，以避免噴淋頭中之任何殘餘的氯導致有機化合物在達到晶圓表面之前完全分解。此分解性質可導致粒子形成及增加之堆 積，此可使薄膜脫落且亦於腔室內產生不需要之粒子。
有利地，噴淋頭26可例如包括分開的氣體空腔46及52，其中第一氣體空腔46係處於晶圓或處理區域74之遠端且因此大體比第二氣體空腔52冷，該第二氣體空腔係位於接近或甚至鄰近晶圓處理區域74。另外，第一氣體空腔46可包括冷卻翼片38，該冷卻翼片進一步有助於相對於第二氣體空腔52來控制及/或降低第一氣體空腔46內之溫度。即使第一氣體空腔46係與處理區域74流體連通，但將第一氣體空腔46與處理區域間隔開允許第一氣體空腔內之前驅物於處理期間更為穩定。在此佈置中，有利的是，使金屬有機化學物質位於第一氣體空腔46中且使過渡金屬鹵化物位於第二氣體空腔52中，進而使過渡金屬鹵化物氣體空腔定位於噴淋頭26中之處理區域與金屬有機物源腔之間。因而，當金屬有機物源及過渡金屬鹵化物源均在噴淋頭26內時，金屬有機物源進一步遠離過渡金屬鹵化物源來定位。
或者，矽或硼氫化物可替代第二氣體空腔中之過渡金屬氫化物，且以類似方式操作來充當用於第一氣體空腔中之金屬有機前驅物或來源之絕緣體。因而，有利的是，使次熱穩定前驅物位於處理區域遠端之噴淋頭氣體空腔中，而使較熱穩定前驅物位於接近處理區域之噴淋頭氣體空腔中。雖然在噴淋頭26中已示範描述各種金屬有機物源、過渡金屬鹵化物源以及矽/硼氫化物，但是適合的是：使用任何氣體分離式噴淋頭，只要該等來源不彼此互相作用直至退出噴淋頭之後；且利用噴淋頭中各來源之相對位置。
用於具有噴淋頭之反應室的方法及設備之此等及其他實施 例可納入如關於用於量測上述裝置的設備之實施例所述的諸多概念、實施例以及構造，該噴淋頭具有同心定位之多個氣體出口且該等出口具有弧形形狀。所示及所述之特定實行方案為本發明及其最佳模式之例示，且並不意欲另外以任何方式限制觀點及實行方案之範疇。的確，出於對簡潔性的考慮，可不詳細描述系統之習知製造、連接、製備以及其他功能觀點。此外，各種圖式中所示之任何連接線意欲代表示範性功能關係及/或各種元件之間的實體耦合。實際系統中可存在及/或在一些實施例中可缺少許多替代或額外功能關係或實體連接。另外，可將其他設計之各種觀點及實行方案納入本揭露內容之範疇內。
如本文所使用，術語「包含」或其任何變化意欲提及非排他性之包涵物，以使得包含一系列元件之製程、方法、物品、組成物或設備並不僅包括所列舉之彼等元件，但亦可包括並未明確列出的或此等製程、方法、物品、組成物或設備固有的其他元件。在不脫離本發明之一般原理的情況下，用於實踐本發明之上述結構、佈置、應用、比例、元件、材料或組件(除並未具體列舉之彼等者)之其他組合及/或修改可變化或另外尤其適於特定環境、製造規範、設計參數或其他操作要求。
20‧‧‧反應室
22‧‧‧上腔室
24‧‧‧下腔室
26‧‧‧噴淋頭
28‧‧‧承載台總成
30‧‧‧箭頭
32‧‧‧上部板/噴淋頭上部板
34‧‧‧中間板
36‧‧‧底板
38‧‧‧冷卻翼片
40‧‧‧凸起中央部分
42‧‧‧第二氣孔
44‧‧‧第一氣孔
46‧‧‧第一氣體空腔
48‧‧‧導管
50‧‧‧通道
52‧‧‧第二氣體空腔
54‧‧‧氣體控制閥總成
56‧‧‧內O型環
58‧‧‧外O型環
60‧‧‧第一氣孔
62‧‧‧第二氣孔
64‧‧‧O型環
66‧‧‧O型環
68‧‧‧O型環
72‧‧‧排氣通道
74‧‧‧處理區域
76‧‧‧排氣間隙
78‧‧‧頂側
80‧‧‧底側
82‧‧‧開口
98‧‧‧頂側
100‧‧‧底側
102‧‧‧狹槽
104‧‧‧突出物
113‧‧‧頂側
122‧‧‧氣體空腔表面

Claims (27)

  1. 一種噴淋頭，其包含：一主體，其具有一開口；一底板，其定位於該開口內且具有複數個底板狹槽；一中間板，其定位於該開口內且具有複數個中間板狹槽及複數個突出物，所述複數個突出物各自包含一突出物狹槽；以及一上部板，其包括一第一氣孔及一第二氣孔；其中所述複數個底板狹槽中每一者與所述複數個中間板狹槽同心地對準；其中一第一氣體空腔界定於該上部板與該中間板之間，且一第二氣體空腔界定於該中間板與該底板之間；且其中該第一氣體空腔與該第一氣孔流體連通，且該第二氣體空腔與該第二氣孔流體連通；其中所述複數個突出物中每一者延伸進入所述複數個底板狹槽中每一者；其中一間隙形成於每一突出物與每一底板狹槽之間，且該間隙與該第二氣體空腔流體連通；且其中所述突出物狹槽與該第一氣體空腔流體連通。
  2. 如申請專利範圍第1項之噴淋頭，其中所述複數個中間板狹槽朝向所述複數個底板狹槽延伸。
  3. 如申請專利範圍第2項之噴淋頭，其中所述複數個中間板狹槽延伸至所述複數個底板狹槽的一底面。
  4. 如申請專利範圍第1項之噴淋頭，其中所述複數個底板狹槽與所述複數個中間板狹槽係定向成複數個環，其中相鄰的底板狹槽相對於彼此偏移。
  5. 如申請專利範圍第1項之噴淋頭，其中所述複數個底板狹槽與所述複數個中間板狹槽係定向成複數個環，其中每隔一個環之底板狹槽對準。
  6. 如申請專利範圍第1至5項中任一項之噴淋頭，其中該間隙界定為在所述複數個突出物之封住所述複數個中間板狹槽中每一者之外表面與所述複數個底板狹槽中每一者之間的空間，且其中該間隙介於0.575mm與0.800mm之間。
  7. 如申請專利範圍第1至5項中任一項之噴淋頭，其中一間隙係形成於所述複數個中間板狹槽中每一者內，且其中該間隙介於0.636mm與1.100mm之間。
  8. 如申請專利範圍第1至5項中任一項之噴淋頭，其中一第一氣體流自形成於該中間板與該上部板之間的該第一氣體空腔，且一第二氣體流自形成於該底板與該中間板之間的該第二氣體空腔。
  9. 如申請專利範圍第1項之噴淋頭，其中該第一氣體空腔輸送一第一氣體，且其中該第二氣體空腔輸送一第二氣體。
  10. 如申請專利範圍第9項之噴淋頭，其中該第一氣體空腔進一步包含與該第一氣孔分開的一第一氣體沖洗通道。
  11. 如申請專利範圍第10項之噴淋頭，其中該第一氣體沖洗通道係定位於該第一空腔之周邊處。
  12. 如申請專利範圍第10項之噴淋頭，其中該第一氣體沖洗通道於一沖洗操作期間提供額外的沖洗氣流。
  13. 如申請專利範圍第10項之噴淋頭，其中該第一氣體沖洗通道操作地連接至一排氣裝置。
  14. 如申請專利範圍第13項之噴淋頭，其中該第一氣體沖洗通道於一沖洗操作期間移除該第一氣體。
  15. 如申請專利範圍第1項之噴淋頭，其中該第二氣體空腔進一步包含與該第二氣孔分開的一第二氣體沖洗通道，且其中該沖洗通道提供一氣流或一真空。
  16. 如申請專利範圍第1項之噴淋頭，其中複數個孔洞自該中間板之一頂面延伸至一底面且與所述複數個中間板狹槽分開。
  17. 如申請專利範圍第1項之噴淋頭，其中所述複數個孔洞與該第二氣體空腔流體連通。
  18. 如申請專利範圍第1至5項中任一項之噴淋頭，其中所述複數個中間板狹槽大體成弧形形狀。
  19. 如申請專利範圍第18項之噴淋頭，其中所述複數個中間板狹槽中每一者延伸小於該噴淋頭之主體之一圓形距離的百分之50。
  20. 如申請專利範圍第1項之噴淋頭，其中所述底板狹槽中之一氣體並不接觸所述中間板狹槽中之一氣體，直至兩種氣體已完全行進穿過所述底板狹槽與所述中間板狹槽。
  21. 如申請專利範圍第1項之噴淋頭，其中所述突出物狹槽包含延伸穿過所述複數個突出物之一部分的一第一半徑以及延伸穿過所述複數個突出物之另一部分之小於該第一半徑的一第二半徑。
  22. 一種半導體工具，其包含： 一反應室，其界定一處理區域；一工件支撐體，其處於該反應室內；一噴淋頭，其用於使至少一種處理氣體分佈於該處理區域內；以及一處理閥門歧管，其與該噴淋頭流體連通來控制所述至少一種處理氣體流入該噴淋頭中；其中該噴淋頭包含：一主體，其包含一開口；一底板，其包含複數個底板狹槽；一中間板，其定位於該開口內且具有複數個中間板狹槽及複數個突出物，所述複數個突出物各自包含一突出物狹槽；以及一上部板，其包括一第一氣孔及一第二氣孔；其中所述複數個底板狹槽中每一者與所述複數個中間板狹槽同心地對準；其中一第一氣體空腔界定於該上部板與該中間板之間，且一第二氣體空腔界定於該中間板與該底板之間；且其中該第一氣體空腔與該第一氣孔流體連通，且該第二氣體空腔與該第二氣孔流體連通；其中所述複數個突出物中每一者延伸進入所述複數個底板狹槽中每一者；其中一間隙形成於每一突出物與每一底板狹槽之間，且該間隙與該第二氣體空腔流體連通；且其中所述突出物狹槽與該第一氣體空腔流體連通。
  23. 如申請專利範圍第22項之半導體工具，其中所述中間板狹槽為弧形的狹槽。
  24. 如申請專利範圍第23項之半導體工具，其中弧形的所述複數個中間板狹槽中每一環交替地與底板狹槽中相鄰環偏移。
  25. 如申請專利範圍第22至24項中任一項之半導體工具，其中該第二氣體空腔進一步包含與該第二氣孔分開的一第二氣體沖洗通道，且其中該沖洗通道提供一氣流或一真空。
  26. 如申請專利範圍第22至24項中任一項之半導體工具，其中該第一氣體空腔進一步包含與該第一氣孔分開的一第一氣體沖洗通道。
  27. 如申請專利範圍第26項之半導體工具，其中該第一氣體沖洗通道係定位於該第一空腔之周邊處。
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US11501956B2 (en) 2022-11-15
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