TW202428929A - 具有背側泵送的熱處理腔室蓋 - Google Patents

具有背側泵送的熱處理腔室蓋 Download PDF

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TW202428929A
TW202428929A TW113108101A TW113108101A TW202428929A TW 202428929 A TW202428929 A TW 202428929A TW 113108101 A TW113108101 A TW 113108101A TW 113108101 A TW113108101 A TW 113108101A TW 202428929 A TW202428929 A TW 202428929A
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Taiwan
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gas
cover plate
gas distribution
region
distribution plate
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TW113108101A
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English (en)
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崔安青
吳典曄
唐薇
楊逸雄
王博
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美商應用材料股份有限公司
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Publication of TW202428929A publication Critical patent/TW202428929A/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract

本案描述了處理腔室蓋組件和包括此處理腔室蓋組件的處理腔室。蓋組件具有殼體，殼體具有與蓋板流體連通的氣體分散通道。蓋板的具有輪廓的底表面限定與氣體分配板的頂表面的間隙。在氣體分配板的上部外周輪廓與蓋板之間形成有泵送通道。

Description

具有背側泵送的熱處理腔室蓋
本揭示內容的具體實施例涉及電子元件製造領域。特定而言，本揭示內容的具體實施例針對用於在半導體元件製造中輸送反應性氣體的設備。
可靠地生產次微米特徵與更小的特徵，是半導體元件的下一代超大型積體電路（VLSI）和極大型積體電路（ULSI）的一個關鍵技術。然而，隨著電路科技的邊界向前推進，VLSI與ULSI科技中互連結構的縮小尺寸對製程能力產生了額外的要求。位於VLSI和ULSI技術核心的多層互連結構，使用高深寬比特徵的精密處理，例如通孔和其他互連結構。可靠地形成這些互連結構，對於VLSI與ULSI的成功是重要的，且對於提升電路密度以及個別基板的品質的持續努力是重要的。
隨著電路密度提升，互連結構（諸如通孔、溝槽、接點以及其他特徵）以及互連結構之間的介電材料的寬度下降，儘管介電材料層的厚度維持實質固定，而使得特徵的深寬比提升。許多傳統的沉積處理難以填充次微米結構，並且難以為表面特徵提供良好的台階覆蓋率。
原子層沉積（ALD）是一種沉積技術，用於在具有高深寬比的特徵上沉積材料層。ALD處理的一個例子，包括循序引入氣體脈衝。例如，用於循序引入氣體脈衝的一個循環，可以包含第一反應氣體的脈衝，隨後是淨化氣體和/或泵抽空的脈衝，之後是第二反應氣體的脈衝，隨後是淨化氣體和/或泵抽空的脈衝。本文所用的術語「氣體」經定義為包括單一氣體或複數種氣體。循序引入第一反應物和第二反應物的個別脈衝，可導致反應物的單層交替自限吸附在基板表面上，因此在每個循環中形成材料的單層。可以重複循環，以形成具有預定厚度的膜。在第一反應物氣體的脈衝和第二反應物氣體的脈衝之間的淨化氣體和/或泵抽空脈衝，用於減少由於剩餘在腔室中的過量反應物而引起反應物氣相反應的可能性。
在一些用於ALD處理的腔室設計中，使用漏斗蓋（funnel lid）輸送前驅物和氣體，前驅物通過漏斗形蓋上方的多個注射器分配前驅物。噴射器產生噴射氣體的圓周運動，噴射氣體透過漏斗輪廓分佈在蓋的中心。氣體/ALD前驅物分子的旋轉慣性，將分子從中心分佈到邊緣，從而改善了均勻性沉積。
已經觀察到在處理過程中，反應性氣體被困在蓋板和噴淋頭之間，導致沉積膜的不均勻。因此，在本領域中一直需要改善沉積膜的均勻性的方法和設備。
本揭示內容的一個或多個具體實施例涉及處理腔室蓋組件。殼體包圍沿著殼體的中心軸線延伸的氣體分散通道。氣體分散通道具有上部和下部。蓋板耦合到殼體並具有具有輪廓的底表面，具有輪廓的底表面從耦合到氣體分散通道的下部的中心開口向下和向外延伸到蓋板的外圍部分。氣體分配板設置在蓋板下方並具有上部外周輪廓，上部外周輪廓用以在氣體分配板和蓋板之間形成泵送通道。氣體分配板具有頂表面和底表面，其具有從頂表面到底表面穿過氣體分配板設置的複數個孔。蓋板的具有輪廓的底表面與氣體分配板的頂表面限定出一間隙。
在描述本揭示內容的幾個示例性具體實施例之前，應當理解，本揭示內容不限於在以下說明中闡述的構造或處理步驟的細節。本揭示內容能夠具有其他具體實施例，並且能夠以各種方式被實踐或執行。
本文所述「基板」是指任何基板或在製造過程中在其上執行薄膜處理的基板上形成的材料表面。例如，可以在其上執行處理的基板表面包括諸如矽、氧化矽、應變矽、絕緣體上矽（SOI）、碳摻雜的氧化矽、非晶矽、經摻雜的矽、鍺、砷化鎵、玻璃、藍寶石的材料、以及其他任何材料，諸如金屬、金屬氮化物、金屬合金和其他導電材料，視應用而定。基板包括但不限於半導體晶圓。可以將基板暴露於預處理處理以拋光、蝕刻、還原、氧化、羥基化、退火和/或烘烤基板表面。除了直接在基板本身的表面上進行薄膜處理外，在本揭示內容中，所揭示的任何薄膜處理步驟還可以在形成於基板上的底層上進行，如下面更詳細地說明，且術語「基板表面」意圖包括背景內容所指示的底層。因此，例如，在膜/層或部分膜/層已經沉積在基板表面上的情況下，新沉積的膜/層的暴露表面成為基板表面。
如本說明書和所附申請專利範圍中所使用的，術語「前驅物」、「反應物」、「反應氣體」等可互換使用，是指可以與基板表面反應的任何氣態物質。
本揭示內容的具體實施例提供了可用於清潔諸如原子層沉積（ALD）腔室之類的基板處理腔室，並在例如ALD處理期間沉積材料的設備和方法。具體實施例包括基板處理腔室和氣體輸送系統，其可包括遠端電漿源和氣體分配板。提供以下處理腔室描述是為了提供背景內容和示例性目的，並且不應被解釋或解釋為限制本揭示內容的範圍。
圖1根據本揭示內容的一些具體實施例是基板處理腔室（處理腔室100）的示意圖，基板處理腔室包括適於ALD處理的氣體輸送系統130。圖2是處理腔室100的截面圖。處理腔室100包括腔室主體102，腔室主體102具有在腔室主體102內並且在腔室蓋組件132下方的處理空間。處理腔室100中的狹縫閥108為機器人（未示出）提供通路，以將基板110（例如200 mm或300 mm的半導體晶圓或玻璃基板）傳送到處理腔室100或從處理腔室100中取出基板110。沿著處理腔室100的壁設置腔室襯墊177，以保護腔室免受在處理/清潔期間使用的腐蝕性氣體的影響。
基板支座112將基板110支撐在處理腔室100中的基板接收表面111上。基板支座112安裝到升降馬達114，以升降基板支座112和設置在基板支座上的基板110。連接至升降馬達118的升降板116（圖2所示）安裝在處理腔室100中，以使升降銷120可升降地移動並穿過基板支座112。升降銷120在基板支座112的表面上方升高和降低基板110。基板支座112可包括用於在沉積處理期間將基板110固定至基板支座112的真空吸盤（未示出）、靜電吸盤（未示出）或夾環（未示出）。
可以調節基板支座112的溫度以控制基板110的溫度。例如，可以使用諸如電阻加熱器（未示出）之類的嵌入式加熱元件來加熱基板支座112，或者可以使用諸如設置在基板支座112上方的加熱燈（未示出）之類的輻射熱來加熱基板支座112。淨化環122可以設置在基板支座112上以限定淨化通道124，淨化通道向基板110的外圍部分提供淨化氣體，以防止沉積在基板110的外圍部分上。
氣體輸送系統130設置在腔室主體102的上部，以向處理腔室100提供諸如處理氣體和/或淨化氣體的氣體。真空系統（未示出）與泵送通道179連通，以從處理腔室100排空任何所需的氣體，並幫助維持處理腔室100內的所需壓力或壓力範圍。
在一些具體實施例中，腔室蓋組件132包括延伸穿過腔室蓋組件132的中心部分的氣體分散通道134。如圖1和圖2中圖示，氣體分散通道134垂直地朝向基板接收表面111延伸，並且還沿著氣體分散通道134的中心軸線133延伸，穿過蓋板170，並且到達底表面160。在一些具體實施例中，氣體分散通道134的上部沿著中心軸線133是實質圓柱形的，並且氣體分散通道134的下部遠離中心軸線133逐漸變細。底表面160的尺寸和形狀被設置為實質覆蓋設置在基板支座112的基板接收表面111上的基板110。底表面160從蓋板170的外邊緣朝向氣體分散通道134逐漸變細。氣體輸送系統130可以向氣體分散通道134提供一種或多種氣體以處理基板110。在一些具體實施例中，氣體輸送系統130可以經由一個氣體入口耦合至氣體分散通道134。在一些具體實施例中，諸如在圖3中示出的那樣，氣體輸送系統可以經由複數個入口耦合至氣體分散通道134。
如圖3所示，示出了通過氣體分散通道134的處理氣體的流動的環形氣流174，可以包含各種類型的流動模式。在一些具體實施例中，可迫使處理氣體在穿過分散通道時繞氣體分散通道134的中心軸線133旋轉。在這樣的具體實施例中，圓形氣流174可包含各種類型的環形流動模式，例如渦旋模式、螺旋模式、漩渦模式或其衍生模式。
儘管提供環形氣流174對於許多應用是有益的，但是發明人已經發現，在一些應用中，環形氣流會導致不均勻的處理結果。發明人已經觀察到，氣流可以導致在被處理的基板110的中心附近的甜甜圈狀的沉積輪廓。甜甜圈狀的輪廓可以由氣體分散通道134的漏斗形狀引起。因此，在一些具體實施例中，處理腔室100還包括氣體分配板125，氣體分配板125具有穿過氣體分配板125設置的複數個孔126。氣體分配板125延伸到氣體分散通道134的表面，使得從氣體分散通道134到基板的唯一路徑是穿過氣體分配板125的複數個孔126。氣體分配板125有利地產生通過氣體分配板125的阻塞的氣體流，從而導致在基板110上的沉積更加均勻，從而實質上消除了由氣體的旋轉流引起的甜甜圈狀的沉積。
在一些具體實施例中，氣體分配板125由非腐蝕性陶瓷材料形成，例如氧化鋁或氮化鋁。在一些具體實施例中，複數個孔126中的每個可具有等效的流體傳導率。在一些具體實施例中，複數個孔126的密度（例如孔的數量或每單位面積的孔的開口的尺寸），可跨氣體分配板125變化，以在基板110上實現期望的沉積輪廓。例如，可以在氣體分配板125的中心處設置更高密度的孔126，以相對於基板的邊緣增加在基板的中心處的沉積速率，以進一步提高沉積均勻性。
儘管將複數個孔126描繪為圓柱形通孔，但是複數個孔126可具有不同的輪廓。圖4A-C描繪了複數個孔126的輪廓的不同的非限制性具體實施例。在圖4A所示的具體實施例中，孔126是具有圍繞孔的彎曲邊緣402的圓柱形通孔。在圖4B所示的具體實施例中，孔126是通孔，通孔具有朝著孔的中心向內漸縮的上部404、垂直於氣體分配板125的上表面127延伸的圓柱形中心部分405、以及從孔的中心向外漸縮的下部406。在圖4C所示的具體實施例中，孔126是通孔，通孔具有具有埋頭孔的上部408、垂直於氣體分配板125的上表面127延伸的圓柱形中心部分409、以及從孔的中心向外漸縮的下部410。複數個孔126的其他輪廓，可以可替代地用於在基板110的處理期間實現最佳的沉積均勻性。
不希望受到理論的束縛，發明人相信，氣體分散通道134的直徑從氣體分散通道134的上部到沿中心軸線133的第一點是恆定的，並且從第一點到氣體分散通道134的下部135逐漸增加，這會允許氣體通過氣體分散通道134的絕熱膨脹較少，這有助於控制包含在循環氣流174中的處理氣體的溫度。例如，輸送到氣體分散通道134中的氣體的突然絕熱膨脹，可能導致氣體溫度下降，這可能導致氣體凝結並形成液滴。另一方面，據信逐漸變細的氣體分散通道134會提供較少的氣體絕熱膨脹。因此，更多的熱量可以傳遞給氣體或從氣體傳遞，因此，可以藉由控制腔室蓋組件132的溫度來更容易地控制氣體的溫度。氣體分散通道134可逐漸變細並包含一個或多個錐形內表面，例如錐形筆直表面、凹面、凸面或其組合，或者可包含一個或多個錐形內表面的一部分（即一部分圓錐形，而一部分沒有錐度）。
如圖3所示，氣體分散通道134的上部由設置在殼體375的內部區域中的插入件300限定。插入件300包括在插入件300的上部的蓋302，和至少部分地限定氣體分散通道134的中央通道。蓋302在殼體375上延伸，以將插入件300保持在適當位置。插入件300和蓋302包括複數個O形環385，O形環385設置在插入件300和殼體375之間以確保適當的密封。插入件300包括複數個周向孔，當插入物300被插入到殼體375中時，這些周向孔形成對應的複數個周向通道360、365、370。複數個周向通道360、365、370經由相應的複數個孔340、345、350流體耦合至氣體分散通道134。在圖3所示的具體實施例中，氣體輸送系統130經由複數條氣體進料管線310、315、320耦合到氣體分散通道134。氣體進料管線310、315、320流體耦合到複數個周向通道360、365、370，以向氣體分散通道134提供一種或多種氣體。
返回參照圖1和圖2，處理腔室100還包括腔室清潔系統，腔室清潔系統包括遠端電漿源（RPS）190、在一端與RPS 190耦合的隔離套環192以及在相對端的蓋302、與蓋板170的上表面耦合的加熱器板198、以及流體耦合至RPS 190的清潔氣體（即淨化氣體）源197。清潔氣體源可以包括適合於形成電漿以清潔處理腔室100的任何氣體。在一些具體實施例中，例如，清潔氣體可以是三氟化氮（NF 3）。隔離套環192包括內部通道193，內部通道193透過設置在蓋302的中央部分中的複數個孔285流體耦合到氣體分散通道134，以使電漿從RPS 190流過氣體分散通道134並流入反應區164。加熱器板198可以由不銹鋼形成，並且包括分散在整個板上的複數個電阻加熱元件。
通常，在氣體輸送系統130將第一氣體提供到氣體分散通道134之後，清潔氣體流過氣體分散通道134和反應區164，以從氣體分散通道134和反應區164中快速去除第一氣體。隨後，藉由氣體輸送系統130將第二氣體提供給氣體分散通道134，並且清潔氣體再次流過氣體分散通道134到達反應區164，以從氣體分散通道134與反應區164中快速淨化去除第二氣體。然而，氣體分配板125的增加阻止了清潔氣體向泵送通道179的流動，並延長了清潔過程。如此，發明人已經結合了排氣系統180，排氣系統180具有排氣導管184，排氣導管184在第一端186處耦合至隔離套環192，並且在第二端188處耦合至泵送通道179。閥182設置在排氣導管184中，以選擇性地將排氣導管184流體耦合至內部通道193。在一些具體實施例中，例如，閥182可以是具有柱塞202的柱塞型閥，柱塞202可在第一位置（如圖2所示）和第二位置之間移動，在第一位置時排氣導管184流體耦合至內部通道193，在第二位置時排氣導管184對內部通道193密封。每次清潔氣體流經氣體分散通道134和反應區164時，閥182就會打開，清潔氣體會迅速排放到泵送通道179中。
當處理腔室100內的壓力超過RPS 190內的壓力時，處理氣體可能會向上流動並損壞RPS 190。複數個孔285用作阻塞點，以防止處理氣體的回流向上流過內部通道193並流入RPS 190。隔離套環192可以由與所使用的清潔氣體不反應的任何材料形成。在一些具體實施例中，當清潔氣體為NF 3時，隔離套環192可以由鋁形成。在一些具體實施例中，隔離套環192和插入件300可以由鋁形成，並且塗覆有塗層，以防止使用時腐蝕性氣體腐蝕隔離套環192和插入件300。例如，塗層可以由鎳或氧化鋁形成。
參考圖3所示，RPS 190在小於或等於約40℃的溫度下操作。為了有利地使RPS 190與在處理腔室100中產生的熱量隔離，在隔離套環192和蓋302之間設置了一個隔熱環394。隔熱環394由具有低導熱率（例如低於隔離套環192和蓋302的導熱率）的金屬形成。另外，O形環385也可以設置在隔離套環192和蓋302之間，以進一步減小隔離套環192和蓋302之間的接觸面積。隔熱環394和O形環385的組合用作熱扼流圈，以確保在處理腔室100中產生的熱量不會對RPS 190產生不利影響。
在一些具體實施例中，當將蓋板170加熱到100℃以上時。處理腔室100可以包括差動泵送管線250，以確保困在O形環385之間的任何處理氣體或副產物被排放到泵送通道179。差動泵送管線250在第一端耦合到蓋板170，並且在與第一端相反的第二端耦合到殼體375。差動泵送管線流體耦合至氣體分散通道134和形成於兩個或更多個O形環385之間的區域處的一個或多個通道260。當閥182打開以將氣體分散通道134排氣時，差動泵送管線排出被困在O形環385之間的氣體。
返回圖3，腔室蓋組件132的底表面160的一部分，可以從與氣體分散通道134耦合的中心開口到腔室蓋組件132的外圍部分向下並向外傾斜或成一定角度，以幫助改進從氣體分散通道134跨過基板110的表面（即從基板的中心到基板的邊緣）的氣體流的速度分佈。底表面160可包含一個或多個表面，例如直表面、凹表面、凸表面或其組合。在一具體實施例中，底表面160是凸漏斗形的。
在一實例中，底表面160朝著基板接收表面111的邊緣向下和向外傾斜，以幫助減小處理氣體在腔室蓋組件132的底表面160和基板110之間傳播的速度的變化，同時有助於提供使基底110的表面均勻暴露於反應氣體。腔室蓋組件132的部件和零件，可以包含諸如不銹鋼、鋁、鍍鎳的鋁、鎳、其合金或其他合適的材料的材料。在一具體實施例中，蓋板170可以由金屬（例如鋁、鋁合金、鋼、不銹鋼、其合金或它們的組合）獨立地製造、加工、鍛造或以其他方式製成。
在一些具體實施例中，氣體分散通道134的內表面131和腔室蓋組件132的底表面160，可包含鏡面拋光表面，以幫助氣體沿著氣體分散通道134和腔室蓋組件132的底表面160流動。
參照圖1至圖3，在處理操作中，由機器人（未示出）透過狹縫閥108將基板110輸送到處理腔室100。透過升降銷120和機械手的配合而將基板110定位在基板支座112上。基板支座112使基板110升高成與氣體分配板125的下表面緊密相對。第一氣體流可以由氣體輸送系統130與第二氣體流一起或分開地（即，脈衝）注入到處理腔室100的氣體分散通道134中。第一氣體流可包含來自淨化氣體源的淨化氣體的連續流和來自反應氣體源的反應氣體的脈衝，或者可包含來自反應氣體源的反應氣體的脈衝和來自淨化氣體源的淨化氣體的脈衝。第二氣體流可包含來自淨化氣體源的淨化氣體的連續流和來自反應氣體源的反應氣體的脈衝，或者可包含來自反應氣體源的反應氣體的脈衝和來自淨化氣體源的淨化氣體的脈衝。
環形氣流174行進通過氣體分散通道134，隨後行進通過氣體分配板125中的複數個孔126。接著將氣體沉積在基板110的表面上。向下傾斜的腔室蓋組件132的底表面160，有助於減少氣流在氣體分配板125的整個表面上的速度變化。過量的氣體、副產物等流入泵送通道179，隨後從處理腔室100排出。在整個處理操作中，加熱器板198可以將腔室蓋組件132加熱到預定溫度，以加熱累積在處理腔室100的壁（或設置在腔室內的處理套件）上的任何固體副產物。結果，任何累積的固體副產物都被汽化。汽化的副產物藉由真空系統（未示出）和泵送通道179抽空。在一些具體實施例中，預定溫度大於或等於150℃。
由於例如氣體輸送系統中殘留的前驅物允許進行氣相反應，因此一些處理條件可能會導致階梯覆蓋問題。在典型的ALD處理中，通常避免氣相反應。因此，本揭示內容的一些具體實施例提供了處理腔室蓋，和具有向腔室蓋的背面泵送能力的處理腔室。一些具體實施例的設備是沒有電漿源連接到其上的熱腔室蓋。在一些具體實施例中，腔室蓋配置有遠端電漿源，以向處理腔室提供遠端電漿。
本揭示內容的一個或多個具體實施例有利地提供了一種用於改善膜在表面特徵上的階梯覆蓋的設備。本揭示內容的一個或多個具體實施例有利地提供一種增加背面泵送以去除殘留的反應性氣體的設備。在一些具體實施例中，設備幫助更有效地泵送困在蓋板和噴淋頭之間的化學物質。
圖5根據本揭示內容的一個或多個具體實施例示出了處理腔室蓋組件500。殼體375包圍沿著殼體375的中心軸線133延伸的氣體分散通道134。氣體分散通道134具有上部134a和下部134b。
蓋板170耦合到殼體375，並具有具有輪廓的底表面160。具有輪廓的底表面160從耦合至氣體分散通道134的下部134b的中心開口136向下和向外延伸至蓋板170的外圍部分138。在所示的具體實施例中，外圍部分138是指具有輪廓的底表面160的與外圍邊緣137相鄰的外部。
蓋組件500包括設置在蓋板170下方的氣體分配板125。氣體分配板125具有頂表面128和底表面129，其具有從頂表面128到底表面129穿過氣體分配板125設置的複數個孔126。
氣體分配板125具有上部外周輪廓520，上部外周輪廓520用以在氣體分配板125和蓋板170之間形成泵送通道530。在圖5的具體實施例中示出的泵送通道530，被限定在蓋板170的外周底表面532與氣體分配板125的上部外周輪廓520之間。在一些具體實施例中，蓋板170的外周底表表面532比具有輪廓的底表表面160的外周部分138離中心軸線133更遠。換句話說，在一些具體實施例中，外周底表表面532圍繞具有輪廓的底表面160。
蓋板170的具有輪廓的底表面160和氣體分配板125的頂表面128限定出間隙G。隨著底表面160的輪廓，間隙G根據距中心軸線133的距離而變化。在一些具體實施例中，內部區域Z I具有比中間區域Z M更大的間隙，並且中間區域Z M具有比外部區域Z O更大的間隙。圖6A示出了蓋板170的示意性截面圖，蓋板170具有類似於圖5A所示的具有輪廓的底表面160。圖6B示出了圖5的蓋板170和氣體分配板125的示意性截面圖，示出了間隙G與距中心軸線133的徑向距離的關係。在圖6A中，蓋板170的輪廓底表面160被分成三個區域：內部區域Z I；中間區域Z M；和外部區域Z O。在此具體實施例中，在中間區域Z M中，具有輪廓的底表面160是平坦的，使得間隙G M是均勻的。參考圖6B，其示出了局部截面圖，中間區域Z M中的間隙G M從中間區域Z M的左邊緣到右邊緣是均勻的。在內部區域Z I中，間隙G I是從中心軸線133測得的距離x的函數。圖6B示出了內部區域Z I中的間隙G Idx的兩次量測。在外部區域Z O中，間隙G O是從中心軸線133測得的距離x的函數。在圖6B中示出了對於外部區域Z O中的間隙G Odx的一種量測。技術人員將認識到，所示出的量測僅用於描述目的。為了描述的目的，在圖6B中省略了氣體分配板125中的孔126。
再次參照圖6B，在一些具體實施例中，內部區域Z I被限定為從蓋板170的中心軸線133到距中心軸線133的內部區域徑向距離R I。中間區域Z M被限定為從內部區域徑向距離R I到距中心軸線133的中間區域徑向距離R M。在輪廓底表面160的外周邊緣137處，從中間區域徑向距離Z M到外部區域徑向距離R O來量測外部區域Z O。
中間區域Z M的尺寸，可以是相對於從中心軸線133到外周邊緣137的總徑向距離量測的任何合適的尺寸。在一些具體實施例中，從中心軸線133到外周邊緣137的距離大於或等於約50 mm、100 mm、150 mm或200 mm。在一些具體實施例中，從中心軸線133到外周邊緣137的距離大於要處理的基板的半徑。例如，在處理300 mm基板的具體實施例中，假設基板居中，則從中心軸線到基板邊緣的徑向距離為150 mm。在此實例中，從中心軸線133到外周邊緣137的距離大於或等於150 mm。
在一些具體實施例中，從中心軸線133到中間區域徑向距離Z M的距離大於或等於約50 mm、100 mm、150 mm或200 mm。在一些具體實施例中，從中心軸線133到中間區域徑向距離Z M的距離大於要處理的基板的半徑。例如，在處理300 mm基板的具體實施例中，假設基板居中，則從中心軸線到基板邊緣的徑向距離為150 mm。在此實例中，例如，從中心軸線133到中間區域徑向距離Z M的距離大於或等於150 mm。
在一些具體實施例中，蓋板170的中間區域Z M的尺寸，在從中心軸線到外部區域徑向距離R O的距離的約10%至大約90%的範圍內。在一些具體實施例中，蓋板170的中間區域Z M的尺寸，在從中心軸線133到外部區域徑向距離R O的距離的約20%至約80%的範圍內，或在約30%至約70%的範圍內，或在約40%至約60%的範圍內。
在一些具體實施例中，中間區域Z M中的實質均勻的間隙在約0.1英寸至約2英寸（約2.5 mm至約51 mm）的範圍內。以這種方式使用的術語「實質上均勻的間隙」，是指中間區域Z M內任何徑向距離處的間隙在中間區域Z M內平均間隙的5%、2%、1%或0.5%之內。
在一些具體實施例中，外部區域Z O從中間區域Z M傾斜到蓋板170的前表面161。在一些具體實施例中，外部區域Z O從中間區域Z M傾斜到氣體分配板125的頂表面128。外部區域Z O相對於平坦的中間區域Z M的斜率，形成如圖7所示的外部區域角度θ。在一些具體實施例中，外部區域角度在約15°至約75°的範圍內，或在約30°至約60°的範圍內，或在約40°至約50°的範圍內。
參照圖5和圖7，在一些具體實施例中，具有輪廓的底表面160的外部區域Z O透過形成在蓋板170中的泵送孔525連接到泵送通道530。在一些具體實施例中，泵送孔525形成在具有輪廓的底表面160的外部區域Z O中。泵送孔525的數量可以基於例如蓋板170的尺寸而變化。在一些具體實施例中，在約24至約144個泵送孔525的範圍內。
如圖7所示，泵送孔以一定角度θ與具有輪廓的底表面160的外部區域Z O相交。在一些具體實施例中，角度θ在約75°至約105°的範圍內，或在約80°至約100°的範圍內，或在約85°至約95°的範圍內，或在約88°至約92°的範圍內。
一些具體實施例的蓋組件500，包括至少一個與泵送通道530流體連通的泵送口560，如圖5所示。泵送口560可以是連接到蓋板170的單獨的部件。在一些具體實施例中，有兩個或更多個泵送口560在不同的徑向位置處連接至泵送通道530。在一些具體實施例中，每個泵送口都連接到單獨的真空源以進行抽空。在一些具體實施例中，泵送口與單個真空源流體連通。在一些具體實施例中，泵送口與泵送通道179（見圖1）流體連通。
圖8根據本揭示內容的一個或多個具體實施例示出了蓋組件600。蓋板170的具有輪廓的底表面160從具有輪廓的底表面160的內邊緣610傾斜到外周邊緣137。
具有輪廓的底表面160的斜率產生間隙G，間隙G在外周邊緣137處減小到最小。在一些具體實施例中，最小間隙G在約0.01英寸至約1英寸（約0.25 mm至約25.4 mm）的範圍內，或在約0.05英寸至約0.5英寸（約1.25 mm至約12.7 mm）的範圍內。
本揭示內容的附加具體實施例涉及結合有蓋組件500或蓋組件600的處理腔室。
在前述說明書中，已經參照本揭示內容的特定示例性具體實施例描述了本揭示內容的具體實施例。可明顯得知的是，在不脫離如所附申請專利範圍中闡述的本揭示內容的具體實施例的更廣泛的精神和範圍的情況下，可以對其進行各種修改。說明書與圖式因此應被視為說明性而非限制性。
100:處理腔室 102:腔室主體 108:狹縫閥 110:基板 111:基板接收表面 112:基板支座 114:升降馬達 116:升降板 118:升降馬達 120:升降銷 122:淨化環 124:淨化通道 125:氣體分配板 126:孔 127:上表面 128:頂表面 129:頂表面 130:氣體輸送系統 132:腔室蓋組件 133:中心軸線 134:氣體分散通道 134a:上部 134b:下部 135:下部 136:中心開口 137:外圍邊緣 138:外圍部分 160:具有輪廓的底表面 161:前表面 164:反應區 170:蓋板 174:環形氣流 177:腔室襯墊 179:泵送通道 180:排氣系統 182:閥 184:排氣導管 186:第一端 188:第二端 190:遠端電漿源（RPS） 192:隔離套 193:內部通道 197:清潔氣體（即淨化氣體）源 198:加熱器板 202:柱塞 250:差動泵送管線 260:通道 285:孔 300:插入件 302:蓋 310:氣體進料管線 315:氣體進料管線 320:氣體進料管線 340:孔 345:孔 350:孔 360:周向通道 365:周向通道 370:周向通道 375:殼體 385:O形環 394:隔熱環 402:彎曲邊緣 404:上部 405:中心部分 406:下部 408:上部 409:中心部分 410:下部 500:處理腔室蓋組件 520:上部外周輪廓 525:泵送孔 530:泵送通道 532:外周底表面 560:泵送口 600:蓋組件 610:內邊緣
可參考多個具體實施例以更特定地說明以上簡要總結的本揭示內容，以更詳細瞭解本揭示內容的上述特徵，附加圖式圖示說明了其中一些具體實施例。然而應注意到，附加圖式僅圖示說明本揭示內容的典型具體實施例，且因此不應被視為限制本揭示內容的範圍，因為本揭示內容可允許其他等效的具體實施例。在附圖中，以示例而非限制的方式示出了本文所述的具體實施例，在附圖中，相似的元件符號指示相似的元件。
圖1根據本揭示內容的一些具體實施例描繪了處理腔室的示意圖；
圖2根據本揭示內容的一些具體實施例描繪了處理腔室的示意性截面圖；
圖3根據本揭示內容的一些具體實施例描繪了蓋組件的示意性截面圖；
圖4A-C根據本揭示內容的具體實施例描繪了穿過氣體分配板佈置的孔的示意圖；
圖5根據本揭示內容的一個或多個具體實施例示出了蓋組件的示意性截面圖；
圖6A根據本揭示內容的一個或多個具體實施例示出了蓋板的示意性截面圖；
圖6B根據本揭示內容的一個或多個具體實施例示出了蓋組件的示意性截面圖；
圖7根據本揭示內容的一個或多個具體實施例示出了蓋組件的示意性截面圖；以及
圖8根據本揭示內容的一個或多個具體實施例示出了蓋組件的示意性截面圖。
為了協助瞭解，已儘可能使用相同的元件符號標定圖式中共有的相同元件。圖式並未按照比例繪製，並可被簡化以為了清楚說明。一個具體實施例的元件與特徵，可無需進一步的敘述即可被有益地併入其他具體實施例中。
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無
125:氣體分配板
126:孔
128:頂表面
129:頂表面
133:中心軸線
134:氣體分散通道
134a:上部
134b:下部
136:中心開口
137:外圍邊緣
138:外圍部分
160:具有輪廓的底表面
170:蓋板
300:插入件
375:殼體
500:處理腔室蓋組件
520:上部外周輪廓
525:泵送孔
530:泵送通道
532:外周底表面
560:泵送口

Claims (11)

  1. 一種用於一處理腔室蓋組件的蓋板，該蓋板包含： 一具有輪廓的底表面，該具有輪廓的底表面從圍繞該蓋板的一中心軸線的一中心開口向下且向外地延伸至該蓋板的一外圍部分，該具有輪廓的底表面包含：一內部區域、一中間區域，及一外部區域，該內部區域被限定為從該中心軸線到距該中心軸線的一內部區域徑向距離，該中間區域被限定為從該內部區域徑向距離到一中間區域徑向距離，該外部區域被限定為在該具有輪廓的底表面的一外周邊緣處從該中間區域徑向距離到一外部區域徑向距離，該外部區域從該中間區域徑向距離傾斜至該蓋板的一前表面，而形成一外部區域角度，該外部區域包含：穿過該蓋板形成的複數個泵送孔。
  2. 如請求項1所述之蓋板，其中當一氣體分配板被設置在該蓋板的該前表面的相鄰處時，在該具有輪廓的底部的該內部區域與該氣體分配板之間的間隙大於在該具有輪廓的底部的該中間區域與該氣體分配板之間的間隙，在該具有輪廓的底部的該中間區域與該氣體分配板之間的間隙大於在該具有輪廓的底部的該外部區域與該氣體分配板之間的間隙。
  3. 如請求項 2所述之蓋板，其中該具有輪廓的底表面的該中間區域形成一實質上均勻的間隙。
  4. 如請求項3所述之蓋板，其中該實質上均勻的間隙是在約0.1英寸至約2英寸的範圍內。
  5. 如請求項2所述之蓋板，其中該中間區域包含：在從該中心軸線至該外部區域徑向距離的距離的約10%至約90%的範圍中。
  6. 如請求項1所述之蓋板，其中該等泵送孔以在約85º至約95º的範圍內的角度與該具有輪廓的底表面的該外部區域相交。
  7. 如請求項1所述之蓋板，其中在該外部區域中存在在約24至約144個的範圍內的泵送孔。
  8. 一種包含如請求項1所述之蓋板的處理腔室。
  9. 如請求項8所述之處理腔室，進一步包含：一殼體，該殼體包圍沿著該殼體的一中心軸線延伸的一氣體分散通道，該氣體分散通道與該蓋板的該中心開口對準。
  10. 如請求項9所述之處理腔室，進一步包含： 一遠端電漿源，該遠端電漿源流體耦合至該氣體分散通道。
  11. 如請求項9所述之處理腔室，進一步包含：一氣體分配板，該氣體分配板被設置在該蓋板的下方，該氣體分配板具有一上部外周輪廓，該上部外周輪廓被配置為形成在該氣體分配板與該蓋板之間的一泵送通道，該氣體分配板具有一頂表面和一底表面，其具有從該頂表面至該底表面穿過該氣體分配板設置的複數個孔。
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