DE17908402T1 - Ald-vorrichtung, verfahren und ventil - Google Patents

Ald-vorrichtung, verfahren und ventil Download PDF

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DE17908402T1
DE17908402T1 DE17908402.5T DE17908402T DE17908402T1 DE 17908402 T1 DE17908402 T1 DE 17908402T1 DE 17908402 T DE17908402 T DE 17908402T DE 17908402 T1 DE17908402 T1 DE 17908402T1
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reaction chamber
closure
valve
cleaning chemical
chemical
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Marko Pudas
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Picosun Oy
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Picosun Oy
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K1/00—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces
    • F16K1/32—Details
    • F16K1/34—Cutting-off parts, e.g. valve members, seats
    • F16K1/44—Details of seats or valve members of double-seat valves
    • F16K1/443—Details of seats or valve members of double-seat valves the seats being in series
    • F16K1/446—Details of seats or valve members of double-seat valves the seats being in series with additional cleaning or venting means between the two seats

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  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
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Abstract

Vorrichtung, umfassend:eine Reaktionskammer;ein pulsierendes Ventil, das an der Reaktionskammer befestigt ist, wobei das pulsierende Ventil umfasst:einen reaktiven Chemikalie-Einlass;einen Reaktionskammer-Auslass; undeinen Verschluss, der eine offene und geschlossene Konfiguration aufweist, um einen Weg von dem reaktiven Chemikalie-Einlass zu dem Reaktionskammer-Auslass zu öffnen bzw. zu verschließen, wobei die Vorrichtung ferner umfasst:einen zusätzlichen Reinigungs-Chemikalie-Einlass auf der Reaktionskammerseite des Verschlusses, um den Verschluss zu spülen.

Claims (30)

  1. Vorrichtung, umfassend: eine Reaktionskammer; ein pulsierendes Ventil, das an der Reaktionskammer befestigt ist, wobei das pulsierende Ventil umfasst: einen reaktiven Chemikalie-Einlass; einen Reaktionskammer-Auslass; und einen Verschluss, der eine offene und geschlossene Konfiguration aufweist, um einen Weg von dem reaktiven Chemikalie-Einlass zu dem Reaktionskammer-Auslass zu öffnen bzw. zu verschließen, wobei die Vorrichtung ferner umfasst: einen zusätzlichen Reinigungs-Chemikalie-Einlass auf der Reaktionskammerseite des Verschlusses, um den Verschluss zu spülen.
  2. Vorrichtung nach Anspruch 1, wobei der Verschluss eine Ventilausbringungsfläche bereitstellt, die zu der Reaktionskammer zeigt, und die Vorrichtung den zusätzlichen Reinigungs-Chemikalie-Einlass umfasst, um die Ventilausbringungsfläche zu spülen.
  3. Vorrichtung nach Anspruch 1 oder 2, wobei der zusätzliche Reinigungs-Chemikalie-Einlass direkt oder zumindest schräg zu dem Verschluss und / oder Ventilausbringungsfläche zeigt.
  4. Vorrichtung nach einem vorhergehenden Anspruch, wobei der Reaktionskammer-Auslass einen Reaktionskammer-Auslasskanal in Richtung der Reaktionskammer bereitstellt.
  5. Vorrichtung nach Anspruch 4, umfassend den zusätzlichen Reinigungs-Chemikalie-Einlass in einer Reaktionskammer-Auslasskanalwand.
  6. Vorrichtung nach Anspruch 4, umfassend ein Rohr, das sich in Richtung des Verschlusses und / oder Ventilausbringungsfläche innerhalb des Reaktionskammer-Auslasskanals erstreckt, wobei das Rohr den zusätzlichen Reinigungs-Chemikalie-Einlass bereitstellt.
  7. Vorrichtung nach einem vorhergehenden Anspruch, wobei die Vorrichtung konfiguriert ist, um kontinuierliche Spülung des Verschlusses und / oder Ventilausbringungsfläche bereitzustellen.
  8. Vorrichtung nach einem vorhergehenden Anspruch, wobei die Vorrichtung konfiguriert ist, um Spülung entlang des Verschlusses und / oder Ventilausbringungsfläche bereitzustellen.
  9. Vorrichtung nach einem vorhergehenden Anspruch, umfassend eine beheizte äußere Kammer um die Reaktionskammer herum.
  10. Vorrichtung nach Anspruch 9, umfassend das pulsierende Ventil in einem erwärmten zwischenliegenden Raum innerhalb der äußeren Kammer, jedoch auf der Außenseite der Reaktionskammer.
  11. Vorrichtung nach einem vorhergehenden Anspruch, wobei das pulsierende Ventil einen Chemikalie-Abfall-Leitungs-Auslass umfasst.
  12. Vorrichtung nach Anspruch 11, bereitstellend einen Weg, der den Verschluss von dem reaktiven Chemikalie-Einlass zu dem Abfall-Leitungs-Auslass umgeht, wobei dieser Weg in der verschlossenen Konfiguration des Verschlusses offen ist.
  13. Vorrichtung nach Anspruch 11 oder 12, wobei die Vorrichtung konfiguriert ist, um einen höheren Druck in einer Chemikalie-Abfall-Leitung, beginnend an dem Abfall-Leitungs-Auslass, im Vergleich zu einem Druck in der Reaktionskammer aufrechtzuerhalten.
  14. Vorrichtung nach einem vorhergehenden Anspruch 11 bis 13, wobei der Verschluss konfiguriert ist, um zu verhindern, dass reaktive Chemikalie in den Chemikalie-Abfall-Leitungs-Auslass fließt, wenn sich dieser in der offenen Konfiguration befindet.
  15. Vorrichtung nach einem vorhergehenden Anspruch, wobei das pulsierende Ventil eingebettet ist in oder befestigt ist an einer Struktur, die ausgewählt ist aus einer Gruppe, umfassend: eine Struktur, die zu einer Reaktionskammer führt, eine Reaktionskammer-Struktur, eine Reaktionskammer-Wand und einen Reaktionskammer-Deckel.
  16. Vorrichtung nach einem vorhergehenden Anspruch, wobei die Vorrichtung ein ALD-Reaktor ist.
  17. Verfahren, umfassend: Zuführen reaktiver Chemikalie durch ein pulsierendes Ventil entlang eines Weges, der sich von einem reaktiven Chemikalie-Einlass zu einem Reaktionskammer-Auslass erstreckt; Steuern des Verschließens des Weges durch einen pulsierendes Ventil-Verschluss; und Zuführen von Reinigungs-Chemikalie durch einen zusätzlichen Reinigungs-Chemikalie-Einlass an der Reaktionskammerseite des Verschlusses und Spülen des Verschlusses durch die Reinigungs-Chemikalie.
  18. Verfahren nach Anspruch 17, umfassend: Spülen einer Ventilausbringungsfläche, die durch den Verschluss bereitgestellt wird, der in Richtung oder direkt auf die Reaktionskammer zeigt, durch Reinigungs-Chemikalie, die aus dem zusätzlichen Reinigungs-Chemikalie-Einlass freigelassen wird, der zusätzlich zu dem Reaktionskammer-Auslass ist.
  19. Verfahren nach Anspruch 17 oder 18, wobei der zusätzliche Reinigungs-Chemikalie-Einlass direkt oder wenigstens schräg zu dem Verschluss und / oder Ventilausbringungsfläche zeigt.
  20. Verfahren nach einem vorhergehenden Anspruch 17-19, umfassend Bereitstellen des zusätzlichen Reinigungs-Chemikalie-Einlass in einer Reaktionskammer-Auslasskanalwand.
  21. Verfahren nach einem vorhergehenden Anspruch 17-20, umfassend Zuführen der Reinigungs-Chemikalie von einem Rohr, das sich in Richtung des Verschlusses und / oder Ventilausbringungsfläche innerhalb des Reaktionskammer-Auslasskanals erstreckt, wobei das Rohr den zusätzlichen Reinigungs-Chemikalie-Einlass bereitstellt.
  22. Verfahren nach einem vorhergehenden Anspruch 17-21, umfassend: kontinuierliches Spülen des Verschlusses und / oder Ventilausbringungsfläche.
  23. Verfahren nach einem vorhergehenden Anspruch 17-22, umfassend: Spülen entlang des Verschlusses und entlang der Reaktionskammer-Auslasskanalwand.
  24. Verfahren nach einem vorhergehenden Anspruch 17-23, umfassend: Erwärmen einer äußeren Kammer um die Reaktionskammer herum.
  25. Verfahren nach einem vorhergehenden Anspruch 17-24, umfassend: Bereitstellen eines Weges, der den Verschluss von dem reaktiven Chemikalie-Einlass zu einem Abfall-Leitungs-Auslass umgeht, wobei dieser Weg in der verschlossenen Konfiguration des Verschlusses offen ist.
  26. Verfahren nach Anspruch 25, umfassend: Aufrechterhalten eines höheren Drucks in einer Chemikalie-Abfall-Leitung im Vergleich zu einem Druck in der Reaktionskammer, wobei Chemikalie-Abfall-Leitung an der Abfall-Leitung beginnt.
  27. Verfahren nach Anspruch 25 oder 26, umfassend: vollständiges Verhindern oder wenigstens teilweises Verhindern, dass reaktive Chemikalie in die Chemikalie-Abfall-Leitung fließt, wenn sich der Verschluss in der offenen Konfiguration befindet.
  28. Verfahren nach einem vorhergehenden Anspruch 17-27, umfassend: Durchführen von ALD-Abscheidung innerhalb der Reaktionskammer.
  29. Verfahren nach einem vorhergehenden Anspruch 17-28, wobei das Zuführen von Reinigungs-Chemikalie Freisetzen von Reinigungs-Chemikalie auf die pulsierende Ventilausbringungsfläche umfasst, wobei die Reinigungs-Chemikalie mit reaktiven Chemikalien auf der Oberfläche reagiert, ohne feste Partikel zu erzeugen.
  30. Ventil zur Verwendung in der Vorrichtung nach einem vorhergehenden Anspruch 1-16, wobei das Ventil umfasst: einen reaktiven Chemikalie-Einlass; einen Reaktionskammer-Auslass; und einen Verschluss, der eine offene und geschlossene Konfiguration aufweist, um zu öffnen bzw. zu verschließen einen Weg von dem reaktiven Chemikalie-Einlass zu dem Reaktionskammer-Auslass, wobei das Ventil ferner umfasst: einen zusätzlichen Reinigungs-Chemikalie-Einlass auf der stromabwärtigen Seite des Verschlusses, um den Verschluss zu spülen.
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