SG11201908711VA - Ald apparatus, method and valve - Google Patents

Ald apparatus, method and valve

Info

Publication number
SG11201908711VA
SG11201908711VA SG11201908711VA SG11201908711VA SG 11201908711V A SG11201908711V A SG 11201908711VA SG 11201908711V A SG11201908711V A SG 11201908711VA SG 11201908711V A SG11201908711V A SG 11201908711VA
Authority
SG
Singapore
Prior art keywords
international
valve
pct
closure
chemical inlet
Prior art date
Application number
Inventor
Marko Pudas
Original Assignee
Picosun Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Picosun Oy filed Critical Picosun Oy
Publication of SG11201908711VA publication Critical patent/SG11201908711VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K1/00—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces
    • F16K1/32—Details
    • F16K1/34—Cutting-off parts, e.g. valve members, seats
    • F16K1/44—Details of seats or valve members of double-seat valves
    • F16K1/443—Details of seats or valve members of double-seat valves the seats being in series
    • F16K1/446—Details of seats or valve members of double-seat valves the seats being in series with additional cleaning or venting means between the two seats

Abstract

International Patent Classification: C23C 16/455 (2006.01) C23C 16/54 (2006.01) (21) International Application Number: PCT/FI2017/050336 (22) International Filing Date: 02 May 2017 (02.05.2017) (25) Filing Language: English (26) Publication Language: English (71) Applicant: PICOSUN OY [FI/FI]; Tietotie 3, 02150 Espoo (FI). (72) Inventor: PUDAS, Marko; Niipperinrinteentie 9A, 02920 Espoo (FI). (74) Agent: ESPATENT OY; Kaivokatu 10 D, 00100 Helsinki (FI). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: — of inventorship (Rule 4.17(iv)) Published: — with international search report (Art. 21(3)) — (54) Title: ALD APPARATUS, METHOD AND VALVE 100 102 111 7103 112 104 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 08 November 2018 (08.11.2018) WIPO I PCT mu °million ono o ololiolom millil iflo Hs (10) International Publication Number WO 2018/202935 Al 115 00 O C Fig. 1 (57) : A substrate processing apparatus, a method and a valve comprising a reactive chemical inlet, a reaction chamber outlet and a closure having an open and closed configuration to open and close, respectively, a route from the reactive chemical inlet to the reaction chamber outlet, the valve further comprising an additional cleaning chemical inlet at a downstream side of the closure to purge the closure. s of the invention are to avoid undesired particle generation while enabling high pulsing speed, to improve cleaning by purging reactive material away from surfaces and to implement a mechanically smaller pulsing valve.
SG11201908711V 2017-05-02 2017-05-02 Ald apparatus, method and valve SG11201908711VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/FI2017/050336 WO2018202935A1 (en) 2017-05-02 2017-05-02 Ald apparatus, method and valve

Publications (1)

Publication Number Publication Date
SG11201908711VA true SG11201908711VA (en) 2019-10-30

Family

ID=64016439

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201908711V SG11201908711VA (en) 2017-05-02 2017-05-02 Ald apparatus, method and valve
SG11201908710S SG11201908710SA (en) 2017-05-02 2018-05-02 Apparatus with a valve and method of operation

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201908710S SG11201908710SA (en) 2017-05-02 2018-05-02 Apparatus with a valve and method of operation

Country Status (8)

Country Link
US (3) US11761082B2 (en)
EP (2) EP3619335A4 (en)
KR (2) KR102411152B1 (en)
CN (2) CN110582591B (en)
DE (2) DE17908402T1 (en)
SG (2) SG11201908711VA (en)
TW (2) TWI754021B (en)
WO (2) WO2018202935A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102411152B1 (en) * 2017-05-02 2022-06-21 피코순 오와이 ALD devices, methods and valves
US11709155B2 (en) 2017-09-18 2023-07-25 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US11709156B2 (en) 2017-09-18 2023-07-25 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved analytical analysis
TW202117217A (en) 2019-09-19 2021-05-01 美商應用材料股份有限公司 Clean isolation valve for reduced dead volume
FI128855B (en) 2019-09-24 2021-01-29 Picosun Oy Fluid distributing device for a thin-film deposition apparatus, related apparatus and methods
US11918936B2 (en) 2020-01-17 2024-03-05 Waters Technologies Corporation Performance and dynamic range for oligonucleotide bioanalysis through reduction of non specific binding
FI129948B (en) * 2021-05-10 2022-11-15 Picosun Oy Substrate processing apparatus and method
FI20215939A1 (en) 2021-09-07 2023-03-08 Picosun Oy Precursor container apparatus
US11939668B2 (en) 2022-04-26 2024-03-26 Applied Materials, Inc. Gas delivery for tungsten-containing layer

Family Cites Families (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB895324A (en) 1957-02-15 1962-05-02 Compressor & Power Engineers L Improvements in compressed air filters
US3288371A (en) 1964-04-22 1966-11-29 Arthur E Broughton Spray shower assembly with self-cleaning nozzle
SE356682B (en) * 1969-06-26 1973-06-04 Tetra Pak Int
CH540478A (en) 1971-04-06 1973-08-15 Sig Schweiz Industrieges Dosing device for liquids and pasty products
DE3537544C1 (en) 1985-10-22 1987-05-21 Aixtron Gmbh Gas inlet device for reaction vessels
US5088444A (en) 1989-03-15 1992-02-18 Kabushiki Kaisha Toshiba Vapor deposition system
WO1998054493A1 (en) * 1997-05-28 1998-12-03 Tetra Laval Holdings & Finance S.A. Double-seated valve
US6258170B1 (en) * 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US6270732B1 (en) * 1998-06-30 2001-08-07 Nanogram Corporation Particle collection apparatus and associated methods
US20030101938A1 (en) * 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
KR100417469B1 (en) 1999-09-20 2004-02-11 주성엔지니어링(주) Apparatus for fabricating semiconductor devices having a twofold chamber wall
US6572924B1 (en) * 1999-11-18 2003-06-03 Asm America, Inc. Exhaust system for vapor deposition reactor and method of using the same
US6800173B2 (en) * 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US6878206B2 (en) * 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6784096B2 (en) * 2002-09-11 2004-08-31 Applied Materials, Inc. Methods and apparatus for forming barrier layers in high aspect ratio vias
WO2004050255A2 (en) * 2002-12-02 2004-06-17 Rerum Cognitio Forschungszentrum Gmbh Method for separating gas mixtures and a gas centrifuge for carrying out this method
US7296532B2 (en) * 2002-12-18 2007-11-20 Taiwan Semiconductor Manufacturing Co., Ltd. Bypass gas feed system and method to improve reactant gas flow and film deposition
JP4423914B2 (en) * 2003-05-13 2010-03-03 東京エレクトロン株式会社 Processing device and method of using the same
US20050221004A1 (en) * 2004-01-20 2005-10-06 Kilpela Olli V Vapor reactant source system with choked-flow elements
JP2005322668A (en) * 2004-05-06 2005-11-17 Renesas Technology Corp Film deposition equipment and film deposition method
CN100554505C (en) 2004-06-28 2009-10-28 剑桥纳米科技公司 Gas-phase deposition system and method
US7133785B2 (en) * 2004-07-08 2006-11-07 Celerity, Inc. Valve control system and method
US20060156980A1 (en) 2005-01-19 2006-07-20 Samsung Electronics Co., Ltd. Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
US20060201425A1 (en) * 2005-03-08 2006-09-14 Applied Microstructures, Inc. Precursor preparation for controlled deposition coatings
DE102005051467A1 (en) * 2005-10-24 2007-04-26 Südmo Holding GmbH Manifold arrangement
JP5244814B2 (en) 2006-11-22 2013-07-24 ソイテック Method, assembly and system using temperature controlled purge gate valve for chemical vapor deposition chamber
US8235001B2 (en) 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
US7816200B2 (en) * 2008-04-22 2010-10-19 Applied Materials, Inc. Hardware set for growth of high k and capping material films
US8741062B2 (en) 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
US20100266765A1 (en) 2009-04-21 2010-10-21 White Carl L Method and apparatus for growing a thin film onto a substrate
KR20110004081A (en) 2009-07-07 2011-01-13 삼성모바일디스플레이주식회사 Canister for deposition apparatus, deposition apparatus using the same and method of depositing
CN201482345U (en) 2009-07-23 2010-05-26 中国京冶工程技术有限公司 Pulse bag type deduster
JP4854794B2 (en) 2010-03-18 2012-01-18 三井造船株式会社 Thin film forming equipment
DE102010046137B4 (en) * 2010-09-14 2013-07-04 Südmo Holding GmbH Double seat valve for separating media
JP5497615B2 (en) * 2010-11-08 2014-05-21 株式会社日立ハイテクノロジーズ Mass spectrometer
US9790594B2 (en) 2010-12-28 2017-10-17 Asm Ip Holding B.V. Combination CVD/ALD method, source and pulse profile modification
JP5806827B2 (en) 2011-03-18 2015-11-10 東京エレクトロン株式会社 Gate valve apparatus, substrate processing apparatus and substrate processing method thereof
KR102111702B1 (en) * 2011-04-07 2020-05-15 피코순 오와이 Atomic layer deposition with plasma source
US9347616B2 (en) 2011-05-28 2016-05-24 Entegris, Inc. Refillable ampoule with purge capability
US8670303B2 (en) * 2011-10-05 2014-03-11 Rockwell Automation Technologies, Inc. Multiple-fault-tolerant ethernet network for industrial control
JP2013115208A (en) * 2011-11-28 2013-06-10 Tokyo Electron Ltd Vaporization material supply device, substrate processing apparatus including the same, and vaporization material supply method
US9388492B2 (en) 2011-12-27 2016-07-12 Asm America, Inc. Vapor flow control apparatus for atomic layer deposition
JP5868219B2 (en) * 2012-02-29 2016-02-24 株式会社フジキン Fluid control device
US20130239889A1 (en) 2012-03-14 2013-09-19 Taiwan Semiconductor Manufacturing Co., Ltd. Valve purge assembly for semiconductor manufacturing tools
US8985152B2 (en) * 2012-06-15 2015-03-24 Novellus Systems, Inc. Point of use valve manifold for semiconductor fabrication equipment
TWM476362U (en) 2012-09-07 2014-04-11 Applied Materials Inc Load lock chamber with slit valve doors
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
SG11201503227XA (en) 2012-11-23 2015-06-29 Picosun Oy Substrate loading in an ald reactor
DE102013001587A1 (en) * 2013-01-30 2014-07-31 Fresenius Medical Care Deutschland Gmbh Device and method for controlling a treatment device
US9314824B2 (en) * 2013-11-08 2016-04-19 Mks Instruments, Inc. Powder and deposition control in throttle valves
JP6262115B2 (en) 2014-02-10 2018-01-17 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
US9663857B2 (en) 2014-04-07 2017-05-30 Asm Ip Holding B.V. Method for stabilizing reaction chamber pressure
KR102387359B1 (en) * 2014-04-18 2022-04-14 어플라이드 머티어리얼스, 인코포레이티드 Auto-refill ampoule and methods of use
JP6336345B2 (en) 2014-06-30 2018-06-06 株式会社フジキン Diaphragm valve, fluid control apparatus, semiconductor manufacturing apparatus, and semiconductor manufacturing method
US10407771B2 (en) 2014-10-06 2019-09-10 Applied Materials, Inc. Atomic layer deposition chamber with thermal lid
CN107148661B (en) 2014-10-17 2019-10-18 朗姆研究公司 Gas supply conveying appliance including the gas diverter controlled for adjustable air flow
US9920844B2 (en) 2014-11-26 2018-03-20 Lam Research Corporation Valve manifold deadleg elimination via reentrant flow path
KR102010633B1 (en) 2015-06-30 2019-08-13 도쿄엘렉트론가부시키가이샤 Substrate processing method and substrate processing apparatus
US20170088952A1 (en) 2015-09-28 2017-03-30 Ultratech, Inc. High-throughput multichamber atomic layer deposition systems and methods
EP3610053A4 (en) * 2017-04-10 2021-02-17 Picosun Oy Uniform deposition
KR102411152B1 (en) * 2017-05-02 2022-06-21 피코순 오와이 ALD devices, methods and valves
US10927459B2 (en) * 2017-10-16 2021-02-23 Asm Ip Holding B.V. Systems and methods for atomic layer deposition

Also Published As

Publication number Publication date
CN110582591A (en) 2019-12-17
US20200190666A1 (en) 2020-06-18
CN110582591B (en) 2022-05-10
KR20190141241A (en) 2019-12-23
US20230383404A1 (en) 2023-11-30
US11761082B2 (en) 2023-09-19
CN110573654A (en) 2019-12-13
TWI754021B (en) 2022-02-01
KR102411152B1 (en) 2022-06-21
DE18794956T1 (en) 2020-06-10
WO2018202935A1 (en) 2018-11-08
EP3619335A1 (en) 2020-03-11
TW201843712A (en) 2018-12-16
KR102527076B1 (en) 2023-04-28
WO2018202949A1 (en) 2018-11-08
EP3619336A1 (en) 2020-03-11
EP3619335A4 (en) 2021-03-10
KR20200003098A (en) 2020-01-08
DE17908402T1 (en) 2020-06-25
US20200181774A1 (en) 2020-06-11
TWI753158B (en) 2022-01-21
EP3619336A4 (en) 2020-12-30
TW201843342A (en) 2018-12-16
SG11201908710SA (en) 2019-10-30

Similar Documents

Publication Publication Date Title
SG11201908711VA (en) Ald apparatus, method and valve
SG11201901463YA (en) Apparatus and methods for atomic layer deposition
SG11201406817XA (en) Powder particle coating using atomic layer deposition cartridge
SG11201805070TA (en) Vapor disposition of silicon-containing films using penta-substituted disilanes
SG11201806624XA (en) Deposition of molybdenum thin films using a molybdenum carbonyl precursor
SG11201808705XA (en) Particle manipulation
SG11201407907XA (en) Apparatus and method for film formation
SG11201908396PA (en) Methods of treating tumor
SG11201900772YA (en) Gene editing of car-t cells for the treatment of t cell malignancies with chimeric antigen receptors
SG11201909931PA (en) Oligomeric particle reagents and methods of use thereof
SG11201811251RA (en) Multi-chamber deposition equipment for solid free form fabrication
SG11201407802WA (en) Methods for engineering allogeneic and immunosuppressive resistant t cell for immunotherapy
SG11201408470XA (en) Methods and compositions for separating or enriching cells
SG11201805048SA (en) Bispecific anti-cd20/anti-cd3 antibodies to treat acute lymphoblastic leukemia
SG11201407580YA (en) Composition comprising two antibodies engineered to have reduced and increased effector function
SG11201808461PA (en) Coating by ald for suppressing metallic whiskers
SG11201909916YA (en) Compositions and methods for improving sample identification in indexed nucleic acid libraries
SG11201803834UA (en) Methods for treating conditions associated with masp-2 dependent complement activation
SG11201803918VA (en) Production of steviol glycosides in recombinant hosts
SG11201407817RA (en) Coating a substrate web by atomic layer deposition
SG11201407800SA (en) Selective binding of biological targets to solid phase ureides
SG11201901725WA (en) Vacuum coating apparatus
SG11201908275XA (en) Peptides and methods for the treatment of diabetes
SG11201909498XA (en) T cell redirecting bispecific antibodies for the treatment of egfr positive cancers
SG11201804019QA (en) Process for the generation of metallic films