SG11201407817RA - Coating a substrate web by atomic layer deposition - Google Patents
Coating a substrate web by atomic layer depositionInfo
- Publication number
- SG11201407817RA SG11201407817RA SG11201407817RA SG11201407817RA SG11201407817RA SG 11201407817R A SG11201407817R A SG 11201407817RA SG 11201407817R A SG11201407817R A SG 11201407817RA SG 11201407817R A SG11201407817R A SG 11201407817RA SG 11201407817R A SG11201407817R A SG 11201407817RA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- substrate web
- web
- atomic layer
- layer deposition
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 8
- 238000000231 atomic layer deposition Methods 0.000 title abstract 6
- 239000011248 coating agent Substances 0.000 title abstract 2
- 238000000576 coating method Methods 0.000 title abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 3
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 239000002243 precursor Substances 0.000 abstract 1
- 238000009738 saturating Methods 0.000 abstract 1
- 238000006557 surface reaction Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/025—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 19 December 2013 (19.12.2013) WIPOIPCT (10) International Publication Number WO 2013/186427 A1 (51) International Patent Classification: C23C16/455 (2006.01) (21) International Application Number: (22) International Filing Date: (25) Filing Language: (26) Publication Language: PCT/FI2012/050616 15 June 2012 (15.06.2012) English English (71) Applicant (for all designated States except US): PI- COSUN OY [FI/FI]; Tietotie 3, FI-02150 Espoo (FI). (72) Inventor; and (75) Inventor/Applicant (for US only): LINDFORS, Sven [FI/FI]; Nuottamiehentie 8, FI-02230 Espoo (FI). (74) Agent: ESPATENT OY; Kaivokatu 10 D, FI-00100 Hel sinki (FI). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: — of inventorship (Rule 4.17(iv)) Published: — with international search report (Art. 21(3)) (54) Title: COATING A SUBSTRATE WEB BY ATOMIC LAYER DEPOSITION 100 (57) Abstract: The present invention relates to a method of receiving and treating moving substrate a web (1 10) in a re action space of an atomic layer deposition (ALD) reactor (100) and apparatuses therefore. It also pertains to a produc tion line that includes such a reactor. The invention com prises receiving moving substrate a web into a reaction space (150) of an atomic layer deposition reactor, providing track a for the substrate web with repeating a pattern (140) in the re action space and exposing the reaction space to precursor pulses to deposit material on the substrate web by sequential self-saturating surface reactions. The pattern is performed by turning the direction of propagation of the substrate web a plurality of times in the reaction space. One effect of the in vention adjusting is an ALD reactor to a required production line substrate web speed. l> CJ •t 00 Fig. 1
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/FI2012/050616 WO2013186427A1 (en) | 2012-06-15 | 2012-06-15 | Coating a substrate web by atomic layer deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201407817RA true SG11201407817RA (en) | 2015-01-29 |
Family
ID=49757637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201407817RA SG11201407817RA (en) | 2012-06-15 | 2012-06-15 | Coating a substrate web by atomic layer deposition |
Country Status (10)
Country | Link |
---|---|
US (1) | US20150107510A1 (en) |
EP (1) | EP2861780A4 (en) |
JP (1) | JP2015525298A (en) |
KR (1) | KR20150023017A (en) |
CN (1) | CN104364419A (en) |
IN (1) | IN2014DN11244A (en) |
RU (1) | RU2605408C2 (en) |
SG (1) | SG11201407817RA (en) |
TW (1) | TW201404921A (en) |
WO (1) | WO2013186427A1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160024882A (en) | 2013-06-27 | 2016-03-07 | 피코순 오와이 | Forming a substrate web track in an atomic layer deposition reactor |
US10164289B2 (en) | 2014-12-02 | 2018-12-25 | Polyplus Battery Company | Vitreous solid electrolyte sheets of Li ion conducting sulfur-based glass and associated structures, cells and methods |
US11749834B2 (en) | 2014-12-02 | 2023-09-05 | Polyplus Battery Company | Methods of making lithium ion conducting sulfide glass |
US10147968B2 (en) | 2014-12-02 | 2018-12-04 | Polyplus Battery Company | Standalone sulfide based lithium ion-conducting glass solid electrolyte and associated structures, cells and methods |
FI126970B (en) * | 2014-12-22 | 2017-08-31 | Picosun Oy | Atomic deposit where the first and second starting species are present at the same time |
US10707536B2 (en) | 2016-05-10 | 2020-07-07 | Polyplus Battery Company | Solid-state laminate electrode assemblies and methods of making |
FI127502B (en) * | 2016-06-30 | 2018-07-31 | Beneq Oy | Method and apparatus for coating substrate |
US10629950B2 (en) | 2017-07-07 | 2020-04-21 | Polyplus Battery Company | Encapsulated sulfide glass solid electrolytes and solid-state laminate electrode assemblies |
US10868293B2 (en) | 2017-07-07 | 2020-12-15 | Polyplus Battery Company | Treating sulfide glass surfaces and making solid state laminate electrode assemblies |
US11631889B2 (en) | 2020-01-15 | 2023-04-18 | Polyplus Battery Company | Methods and materials for protection of sulfide glass solid electrolytes |
CN111711448B (en) * | 2020-08-07 | 2023-03-21 | 电信科学技术第五研究所有限公司 | Rubidium atomic clock taming system and method |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4292264A (en) * | 1978-07-18 | 1981-09-29 | Motorola, Inc. | Method for producing polycrystalline ribbon |
FI57975C (en) * | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | OVER ANCHORING VIDEO UPDATE FOR AVAILABILITY |
US5141595A (en) * | 1990-03-05 | 1992-08-25 | Northrop Corporation | Method and apparatus for carbon coating and boron-doped carbon coating |
JP3244803B2 (en) * | 1992-09-11 | 2002-01-07 | 株式会社半導体エネルギー研究所 | Method for manufacturing electronic device |
JPH06150310A (en) * | 1992-11-05 | 1994-05-31 | Sony Corp | Production of magnetic recording medium |
JPH09107116A (en) * | 1995-10-11 | 1997-04-22 | Canon Inc | Device for forming deposited film |
JPH1065196A (en) * | 1996-08-23 | 1998-03-06 | Canon Inc | Continuous forming method and continuous forming equipment for functional deposition film of photovoltaic element and the like |
US8211235B2 (en) * | 2005-03-04 | 2012-07-03 | Picosun Oy | Apparatuses and methods for deposition of material on surfaces |
US7247340B2 (en) * | 2005-12-28 | 2007-07-24 | Superpower, Inc. | Method of making a superconducting conductor |
EP2000008B1 (en) * | 2006-03-26 | 2011-04-27 | Lotus Applied Technology, Llc | Atomic layer deposition system and method for coating flexible substrates |
US20070281089A1 (en) * | 2006-06-05 | 2007-12-06 | General Electric Company | Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects |
JP5543203B2 (en) * | 2006-06-16 | 2014-07-09 | フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. | Method and apparatus for atomic layer deposition using atmospheric pressure glow discharge plasma |
US8741062B2 (en) * | 2008-04-22 | 2014-06-03 | Picosun Oy | Apparatus and methods for deposition reactors |
TW201015738A (en) * | 2008-10-03 | 2010-04-16 | Ind Tech Res Inst | Atomic layer deposition apparatus |
US9327416B2 (en) * | 2009-07-17 | 2016-05-03 | The Gillette Company | Atomic layer deposition coatings on razor components |
US20120321910A1 (en) * | 2010-01-12 | 2012-12-20 | Sundew Technologies Llc | Methods and apparatus for atomic layer deposition on large area substrates |
CN102477544A (en) * | 2010-11-26 | 2012-05-30 | 英作纳米科技(北京)有限公司 | Atomic layer deposition method used for preparing inner wall membrane of porous material, and equipment thereof |
-
2012
- 2012-06-15 US US14/407,956 patent/US20150107510A1/en not_active Abandoned
- 2012-06-15 CN CN201280073942.1A patent/CN104364419A/en active Pending
- 2012-06-15 JP JP2015516654A patent/JP2015525298A/en active Pending
- 2012-06-15 EP EP12878897.3A patent/EP2861780A4/en not_active Withdrawn
- 2012-06-15 SG SG11201407817RA patent/SG11201407817RA/en unknown
- 2012-06-15 KR KR1020157000986A patent/KR20150023017A/en not_active Application Discontinuation
- 2012-06-15 RU RU2014152783/02A patent/RU2605408C2/en active
- 2012-06-15 WO PCT/FI2012/050616 patent/WO2013186427A1/en active Application Filing
-
2013
- 2013-05-21 TW TW102117879A patent/TW201404921A/en unknown
-
2014
- 2014-12-31 IN IN11244DEN2014 patent/IN2014DN11244A/en unknown
Also Published As
Publication number | Publication date |
---|---|
TW201404921A (en) | 2014-02-01 |
EP2861780A1 (en) | 2015-04-22 |
WO2013186427A1 (en) | 2013-12-19 |
US20150107510A1 (en) | 2015-04-23 |
KR20150023017A (en) | 2015-03-04 |
RU2014152783A (en) | 2016-08-10 |
RU2605408C2 (en) | 2016-12-20 |
JP2015525298A (en) | 2015-09-03 |
CN104364419A (en) | 2015-02-18 |
EP2861780A4 (en) | 2016-01-20 |
IN2014DN11244A (en) | 2015-10-09 |
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