IN2014DN11244A - - Google Patents
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- Publication number
- IN2014DN11244A IN2014DN11244A IN11244DEN2014A IN2014DN11244A IN 2014DN11244 A IN2014DN11244 A IN 2014DN11244A IN 11244DEN2014 A IN11244DEN2014 A IN 11244DEN2014A IN 2014DN11244 A IN2014DN11244 A IN 2014DN11244A
- Authority
- IN
- India
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/025—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/FI2012/050616 WO2013186427A1 (en) | 2012-06-15 | 2012-06-15 | Coating a substrate web by atomic layer deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014DN11244A true IN2014DN11244A (en) | 2015-10-09 |
Family
ID=49757637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN11244DEN2014 IN2014DN11244A (en) | 2012-06-15 | 2014-12-31 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20150107510A1 (en) |
| EP (1) | EP2861780A4 (en) |
| JP (1) | JP2015525298A (en) |
| KR (1) | KR20150023017A (en) |
| CN (1) | CN104364419A (en) |
| IN (1) | IN2014DN11244A (en) |
| RU (1) | RU2605408C2 (en) |
| SG (1) | SG11201407817RA (en) |
| TW (1) | TW201404921A (en) |
| WO (1) | WO2013186427A1 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160024882A (en) * | 2013-06-27 | 2016-03-07 | 피코순 오와이 | Forming a substrate web track in an atomic layer deposition reactor |
| US10164289B2 (en) | 2014-12-02 | 2018-12-25 | Polyplus Battery Company | Vitreous solid electrolyte sheets of Li ion conducting sulfur-based glass and associated structures, cells and methods |
| US11749834B2 (en) | 2014-12-02 | 2023-09-05 | Polyplus Battery Company | Methods of making lithium ion conducting sulfide glass |
| US11984553B2 (en) | 2014-12-02 | 2024-05-14 | Polyplus Battery Company | Lithium ion conducting sulfide glass fabrication |
| US10147968B2 (en) | 2014-12-02 | 2018-12-04 | Polyplus Battery Company | Standalone sulfide based lithium ion-conducting glass solid electrolyte and associated structures, cells and methods |
| FI126970B (en) * | 2014-12-22 | 2017-08-31 | Picosun Oy | Atomic deposit where the first and second starting species are present at the same time |
| US10707536B2 (en) | 2016-05-10 | 2020-07-07 | Polyplus Battery Company | Solid-state laminate electrode assemblies and methods of making |
| FI127502B (en) * | 2016-06-30 | 2018-07-31 | Beneq Oy | Method and apparatus for coating substrate |
| US10868293B2 (en) | 2017-07-07 | 2020-12-15 | Polyplus Battery Company | Treating sulfide glass surfaces and making solid state laminate electrode assemblies |
| US10629950B2 (en) | 2017-07-07 | 2020-04-21 | Polyplus Battery Company | Encapsulated sulfide glass solid electrolytes and solid-state laminate electrode assemblies |
| US11631889B2 (en) | 2020-01-15 | 2023-04-18 | Polyplus Battery Company | Methods and materials for protection of sulfide glass solid electrolytes |
| US12021187B2 (en) | 2020-08-04 | 2024-06-25 | Polyplus Battery Company | Surface treatment of a sulfide glass solid electrolyte layer |
| US12034116B2 (en) | 2020-08-04 | 2024-07-09 | Polyplus Battery Company | Glass solid electrolyte layer, methods of making glass solid electrolyte layer and electrodes and battery cells thereof |
| US12021238B2 (en) | 2020-08-04 | 2024-06-25 | Polyplus Battery Company | Glassy embedded solid-state electrode assemblies, solid-state batteries and methods of making electrode assemblies and solid-state batteries |
| CN111711448B (en) * | 2020-08-07 | 2023-03-21 | 电信科学技术第五研究所有限公司 | Rubidium atomic clock taming system and method |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4292264A (en) * | 1978-07-18 | 1981-09-29 | Motorola, Inc. | Method for producing polycrystalline ribbon |
| FI57975C (en) * | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | OVER ANCHORING VIDEO UPDATE FOR AVAILABILITY |
| US5141595A (en) * | 1990-03-05 | 1992-08-25 | Northrop Corporation | Method and apparatus for carbon coating and boron-doped carbon coating |
| JP3244803B2 (en) * | 1992-09-11 | 2002-01-07 | 株式会社半導体エネルギー研究所 | Method for manufacturing electronic device |
| JPH06150310A (en) * | 1992-11-05 | 1994-05-31 | Sony Corp | Production of magnetic recording medium |
| JPH09107116A (en) * | 1995-10-11 | 1997-04-22 | Canon Inc | Device for forming deposited film |
| JPH1065196A (en) * | 1996-08-23 | 1998-03-06 | Canon Inc | Continuous forming method and continuous forming equipment for functional deposition film of photovoltaic element and the like |
| US8211235B2 (en) * | 2005-03-04 | 2012-07-03 | Picosun Oy | Apparatuses and methods for deposition of material on surfaces |
| US7247340B2 (en) * | 2005-12-28 | 2007-07-24 | Superpower, Inc. | Method of making a superconducting conductor |
| BRPI0709199A2 (en) * | 2006-03-26 | 2011-06-28 | Lotus Applied Technology Llc | system and method for depositing a thin film on a flexible substrate |
| US20070281089A1 (en) * | 2006-06-05 | 2007-12-06 | General Electric Company | Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects |
| EP2032738A1 (en) * | 2006-06-16 | 2009-03-11 | Fuji Film Manufacturing Europe B.V. | Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma |
| US8741062B2 (en) * | 2008-04-22 | 2014-06-03 | Picosun Oy | Apparatus and methods for deposition reactors |
| TW201015738A (en) * | 2008-10-03 | 2010-04-16 | Ind Tech Res Inst | Atomic layer deposition apparatus |
| US9327416B2 (en) * | 2009-07-17 | 2016-05-03 | The Gillette Company | Atomic layer deposition coatings on razor components |
| US20120321910A1 (en) * | 2010-01-12 | 2012-12-20 | Sundew Technologies Llc | Methods and apparatus for atomic layer deposition on large area substrates |
| CN102477544A (en) * | 2010-11-26 | 2012-05-30 | 英作纳米科技（北京）有限公司 | Atomic layer deposition method used for preparing inner wall membrane of porous material, and equipment thereof |
-
2012
- 2012-06-15 EP EP12878897.3A patent/EP2861780A4/en not_active Withdrawn
- 2012-06-15 CN CN201280073942.1A patent/CN104364419A/en active Pending
- 2012-06-15 KR KR1020157000986A patent/KR20150023017A/en not_active Application Discontinuation
- 2012-06-15 JP JP2015516654A patent/JP2015525298A/en active Pending
- 2012-06-15 US US14/407,956 patent/US20150107510A1/en not_active Abandoned
- 2012-06-15 RU RU2014152783/02A patent/RU2605408C2/en active
- 2012-06-15 SG SG11201407817RA patent/SG11201407817RA/en unknown
- 2012-06-15 WO PCT/FI2012/050616 patent/WO2013186427A1/en active Application Filing
-
2013
- 2013-05-21 TW TW102117879A patent/TW201404921A/en unknown
-
2014
- 2014-12-31 IN IN11244DEN2014 patent/IN2014DN11244A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| RU2605408C2 (en) | 2016-12-20 |
| EP2861780A1 (en) | 2015-04-22 |
| US20150107510A1 (en) | 2015-04-23 |
| CN104364419A (en) | 2015-02-18 |
| SG11201407817RA (en) | 2015-01-29 |
| JP2015525298A (en) | 2015-09-03 |
| TW201404921A (en) | 2014-02-01 |
| EP2861780A4 (en) | 2016-01-20 |
| WO2013186427A1 (en) | 2013-12-19 |
| KR20150023017A (en) | 2015-03-04 |
| RU2014152783A (en) | 2016-08-10 |