SG11201805070TA - Vapor disposition of silicon-containing films using penta-substituted disilanes - Google Patents

Vapor disposition of silicon-containing films using penta-substituted disilanes

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Publication number
SG11201805070TA
SG11201805070TA SG11201805070TA SG11201805070TA SG11201805070TA SG 11201805070T A SG11201805070T A SG 11201805070TA SG 11201805070T A SG11201805070T A SG 11201805070TA SG 11201805070T A SG11201805070T A SG 11201805070TA SG 11201805070T A SG11201805070T A SG 11201805070TA
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SG
Singapore
Prior art keywords
international
tsukuba
ibaraki
penta
pct
Prior art date
Application number
SG11201805070TA
Inventor
Jean-Marc Girard
Changhee Ko
Ivan Oshchepkov
Kazutaka Yanagita
Shingo Okubo
Naoto Noda
Julien Gatineau
Original Assignee
Air Liquide
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Publication date
Application filed by Air Liquide filed Critical Air Liquide
Publication of SG11201805070TA publication Critical patent/SG11201805070TA/en

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    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers

Abstract

WO 17 / 115 147 A3 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2017/115147 A3 6 July 2017 (06.07.2017) WIPO I PCT (51) International Patent Classification: HO1L 21/316 (2006.01) HO1L 21/31 (2006.01) C23C 16/455 (2006.01) (21) International Application Number: PCT/IB2016/001962 (22) International Filing Date: 16 December 2016 (16.12.2016) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 14/979,816 28 December 2015 (28.12.2015) US (71) Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PRO- CEDES GEORGES CLAUDE [FR/FR]; 75 quai d'Orsay, 75007 Paris (FR). (72) Inventors: GIRARD, Jean-Marc; 16 rue Montbauron, 78000 Versailles (FR). KO, Changhee; Takezono 2-15-3, Garden Terrace C-3, Tsukuba, Ibaraki, 305-0032 (JP). OSHCHEPKOV, Ivan; Sengen 1-13-3, Parusu Guran- rejio, Tsukuba Sengen 402, Tsukuba, Ibaraki, 305-0047 (JP). YANAGITA, Kazutaka; Kaname 187-4, Tsukuba, Ibaraki, 300-3261 (JP). OKUBO, Shingo; Sky Hts Kasuga #302, Kasuga 3-7-8, Tsukuba, Ibaraki, 305-0821 (JP). NODA, Naoto; #205, 851-1 Kurakake, Tsukuba, Ibaraki, 305-0024 (JP). GATINEAU, Julien; Leaders Vill 401, 14 Donggwang-ro 41-gil, Seocho-gu, Gyeonggi-do, Seoul 06580 (KR). (74) Agent: CONAN, Philippe; L'Air Liquide SA., Direction de la Propriete Intellectuelle, 75, quai d'Orsay, 75321 Paris Cedex 07 (FR). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). [Continued on next page] (54) Title: VAPOR DISPOSITION OF SILICON-CONTAINING FILMS USING PENTA-SUBSTITUTED DISILANES 2.3 2.2 2.1 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 300 400 500 600 Temperature (t) FIG 13 (57) : Disclosed are methods of depositing silicon-containing films on substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane. 111111111111110111011111111111010111110 0111011111111010111111111111111111110111111 4 3.5 0 DR-PCDS —El— DR-HODS — A — DR-OCTS — 0 — R I-PCDS f RI-I-ICDS — A — R i-oc.; - rs 3 2.5 0 5 0.5 0 WO 2017/115147 A3 liliEDIMOMOIDIOIRDIOF II M 0111 OM 010 HOER IIII 00# Published: (88) Date of publication of the international search report: with international search report (Art. 2 1 (3)) 10 August 2017 before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h))
SG11201805070TA 2015-12-28 2016-12-16 Vapor disposition of silicon-containing films using penta-substituted disilanes SG11201805070TA (en)

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