JP6336345B2 - ダイヤフラム弁、流体制御装置、半導体製造装置および半導体製造方法 - Google Patents
ダイヤフラム弁、流体制御装置、半導体製造装置および半導体製造方法 Download PDFInfo
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- JP6336345B2 JP6336345B2 JP2014134979A JP2014134979A JP6336345B2 JP 6336345 B2 JP6336345 B2 JP 6336345B2 JP 2014134979 A JP2014134979 A JP 2014134979A JP 2014134979 A JP2014134979 A JP 2014134979A JP 6336345 B2 JP6336345 B2 JP 6336345B2
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- 239000012530 fluid Substances 0.000 title claims description 79
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 239000004065 semiconductor Substances 0.000 title claims description 39
- 230000002093 peripheral effect Effects 0.000 claims description 20
- 238000003825 pressing Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims 1
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 101100212791 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) YBL068W-A gene Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K1/00—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces
- F16K1/32—Details
- F16K1/34—Cutting-off parts, e.g. valve members, seats
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K7/00—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves
- F16K7/12—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm
- F16K7/14—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm arranged to be deformed against a flat seat
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K7/00—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves
- F16K7/12—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm
- F16K7/14—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm arranged to be deformed against a flat seat
- F16K7/17—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm arranged to be deformed against a flat seat the diaphragm being actuated by fluid pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
Description
Claims (10)
- 流体流入通路、流体流出通路および上向きに開口した凹所が設けられたボディと、ボディに形成された流体流入通路の周縁に配置された環状のシートと、シートに押圧・離間されることで流体流入通路の開閉を行う弾性変形可能な自然状態で球殻状のダイヤフラムと、ダイヤフラムの外周縁部をボディの凹所底面との間で保持する押さえアダプタと、ダイヤフラムの中央部を押圧するダイヤフラム押さえと、ダイヤフラム押さえを上下移動させる上下移動手段とを備えているダイヤフラム弁において、
ボディ凹所底面の平坦部に、流体流出通路の凹所の底面に開口している部分を含むように、ざぐり部が設けられていることを特徴とするダイヤフラム弁。 - ざぐり部の底面は、シートの外周面からダイヤフラムの外周縁部を支持する部位の内縁まで平坦であり、シートは内側からのかしめのみでボディに固定されることを特徴とする請求項1に記載のダイヤフラム弁。
- 弁開時、前記ダイヤフラムの直径に対する、前記ダイヤフラムと圧接密着している前記凹所のダイヤフラム支持部から前記ダイヤフラムの頂点までの垂直距離との比が18:1〜30:1であり、前記頂点が接液側最下層の上面の頂点である請求項1または2に記載のダイヤフラム弁。
- ボディ凹所底面の平坦部の高さよりもシートの上端面の高さの方が高いことを特徴とする請求項1〜3のいずれか1項に記載のダイヤフラム弁。
- 流体流出通路の断面形状が、長孔とされていることを特徴とする請求項1〜4のいずれか1項に記載のダイヤフラム弁。
- 流体制御機器として、開閉弁を備えている流体制御装置であって、該開閉弁が請求項1〜5のいずれか1項に記載のダイヤフラム弁とされていることを特徴とする流体制御装置。
- 半導体製造装置で使用されることを特徴とする請求項6に記載の流体制御装置。
- ガス供給部として請求項6に記載の流体制御装置を備えたことを特徴とする半導体製造装置。
- 半導体製造装置は、CVD装置、スパッタリング装置またはエッチング装置であることを特徴とする請求項8に記載の半導体製造装置。
- 請求項9に記載の半導体製造装置を使用して半導体を製造することを特徴とする半導体製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014134979A JP6336345B2 (ja) | 2014-06-30 | 2014-06-30 | ダイヤフラム弁、流体制御装置、半導体製造装置および半導体製造方法 |
KR1020187032202A KR20180123185A (ko) | 2014-06-30 | 2015-06-17 | 다이어프램 밸브, 유체 제어 장치, 반도체 제조 장치 및 반도체 제조 방법 |
US15/322,553 US20170130848A1 (en) | 2014-06-30 | 2015-06-17 | Diaphragm valve, fluid control device, semiconductor manufacturing apparatus, and semiconductor manufacturing method |
CN201580033240.4A CN106471298A (zh) | 2014-06-30 | 2015-06-17 | 隔膜阀、流体控制装置、半导体制造装置以及半导体制造方法 |
PCT/JP2015/067433 WO2016002515A1 (ja) | 2014-06-30 | 2015-06-17 | ダイヤフラム弁、流体制御装置、半導体製造装置および半導体製造方法 |
KR1020167031850A KR20160143832A (ko) | 2014-06-30 | 2015-06-17 | 다이어프램 밸브, 유체 제어 장치, 반도체 제조 장치 및 반도체 제조 방법 |
TW104120876A TWI672458B (zh) | 2014-06-30 | 2015-06-29 | 隔膜閥、流體控制裝置、半導體製造裝置及半導體製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014134979A JP6336345B2 (ja) | 2014-06-30 | 2014-06-30 | ダイヤフラム弁、流体制御装置、半導体製造装置および半導体製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018088319A Division JP2018132194A (ja) | 2018-05-01 | 2018-05-01 | ダイヤフラム弁、流体制御装置、半導体制御装置および半導体制御方法 |
Publications (2)
Publication Number | Publication Date |
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JP2016011744A JP2016011744A (ja) | 2016-01-21 |
JP6336345B2 true JP6336345B2 (ja) | 2018-06-06 |
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Family Applications (1)
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JP2014134979A Active JP6336345B2 (ja) | 2014-06-30 | 2014-06-30 | ダイヤフラム弁、流体制御装置、半導体製造装置および半導体製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20170130848A1 (ja) |
JP (1) | JP6336345B2 (ja) |
KR (2) | KR20160143832A (ja) |
CN (1) | CN106471298A (ja) |
TW (1) | TWI672458B (ja) |
WO (1) | WO2016002515A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6372998B2 (ja) * | 2013-12-05 | 2018-08-15 | 株式会社フジキン | 圧力式流量制御装置 |
JP6564593B2 (ja) * | 2015-03-25 | 2019-08-21 | 株式会社フジキン | ダイヤフラム弁 |
WO2018037993A1 (ja) * | 2016-08-25 | 2018-03-01 | 株式会社キッツエスシーティー | ダイヤフラムバルブと半導体製造装置用流量制御機器 |
JPWO2018168872A1 (ja) | 2017-03-17 | 2020-01-30 | 株式会社フジキン | 流体制御機器 |
JP6929098B2 (ja) * | 2017-03-30 | 2021-09-01 | 株式会社キッツエスシーティー | メタルダイヤフラムバルブ |
US11761082B2 (en) | 2017-05-02 | 2023-09-19 | Picosun Oy | ALD apparatus, method and valve |
KR102284443B1 (ko) * | 2017-06-30 | 2021-08-02 | 가부시키가이샤 후지킨 | 밸브장치 |
JP7257056B2 (ja) * | 2018-04-06 | 2023-04-13 | 株式会社フジキン | バルブ装置および流体制御装置、流体制御方法、半導体製造装置及び半導体製造方法 |
CN111989514A (zh) * | 2018-07-09 | 2020-11-24 | 株式会社富士金 | 流体控制设备 |
JP7144727B2 (ja) * | 2018-08-08 | 2022-09-30 | セイコーエプソン株式会社 | ダイヤフラム式圧縮機、プロジェクター、冷却機及び流体の圧縮方法 |
JP7187015B2 (ja) * | 2018-09-29 | 2022-12-12 | 株式会社フジキン | ダイヤフラムバルブ及び流量制御装置 |
KR102613338B1 (ko) * | 2019-07-31 | 2023-12-14 | 가부시키가이샤 후지킨 | 밸브 장치, 유체 제어 장치 및 밸브 장치의 제조 방법 |
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US5112027A (en) * | 1989-06-21 | 1992-05-12 | Benkan Corporation | Metal diaphragm valve |
JPH08105554A (ja) * | 1994-10-03 | 1996-04-23 | Hitachi Metals Ltd | メタルダイヤフラム弁 |
EP0791939B1 (en) * | 1995-09-08 | 2003-08-13 | Toto Ltd. | Solenoid and solenoid valve |
JP4587419B2 (ja) * | 2000-11-16 | 2010-11-24 | 株式会社フジキン | メタルダイヤフラム弁 |
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JP2005188672A (ja) * | 2003-12-26 | 2005-07-14 | Neriki:Kk | バルブ装置 |
JP2006070946A (ja) * | 2004-08-31 | 2006-03-16 | Asahi Organic Chem Ind Co Ltd | 調節弁 |
JP2006083959A (ja) * | 2004-09-16 | 2006-03-30 | Fujikin Inc | センサ付き継手部材 |
JP4971030B2 (ja) * | 2007-05-21 | 2012-07-11 | シーケーディ株式会社 | 流体制御弁 |
US20090146095A1 (en) * | 2007-12-11 | 2009-06-11 | Marc Baril | Drainable radial diaphragm valve |
JP5331180B2 (ja) * | 2011-09-22 | 2013-10-30 | 株式会社フジキン | ダイレクトタッチ型メタルダイヤフラム弁のバルブストローク調整方法 |
JP5933370B2 (ja) | 2012-06-29 | 2016-06-08 | 株式会社フジキン | ダイヤフラム弁 |
JP6333052B2 (ja) * | 2014-05-09 | 2018-05-30 | サーパス工業株式会社 | 遮断弁 |
-
2014
- 2014-06-30 JP JP2014134979A patent/JP6336345B2/ja active Active
-
2015
- 2015-06-17 CN CN201580033240.4A patent/CN106471298A/zh active Pending
- 2015-06-17 WO PCT/JP2015/067433 patent/WO2016002515A1/ja active Application Filing
- 2015-06-17 KR KR1020167031850A patent/KR20160143832A/ko not_active Application Discontinuation
- 2015-06-17 US US15/322,553 patent/US20170130848A1/en not_active Abandoned
- 2015-06-17 KR KR1020187032202A patent/KR20180123185A/ko not_active Application Discontinuation
- 2015-06-29 TW TW104120876A patent/TWI672458B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN106471298A (zh) | 2017-03-01 |
KR20160143832A (ko) | 2016-12-14 |
JP2016011744A (ja) | 2016-01-21 |
KR20180123185A (ko) | 2018-11-14 |
TWI672458B (zh) | 2019-09-21 |
WO2016002515A1 (ja) | 2016-01-07 |
TW201606218A (zh) | 2016-02-16 |
US20170130848A1 (en) | 2017-05-11 |
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